CN115267623A - Magnetic resistance magnetic switch sensor - Google Patents
Magnetic resistance magnetic switch sensor Download PDFInfo
- Publication number
- CN115267623A CN115267623A CN202211166139.4A CN202211166139A CN115267623A CN 115267623 A CN115267623 A CN 115267623A CN 202211166139 A CN202211166139 A CN 202211166139A CN 115267623 A CN115267623 A CN 115267623A
- Authority
- CN
- China
- Prior art keywords
- magnetic
- wheatstone bridges
- magnetoresistive
- group
- gmr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/091—Constructional adaptation of the sensor to specific applications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
The invention discloses a magnetic resistance magnetic switch sensor, which relates to the technical field of magnetic sensors and comprises the following components: a first set of Wheatstone bridges and a second set of Wheatstone bridges; the first group of Wheatstone bridges and the second group of Wheatstone bridges are used for inducing magnetic fields in a first direction and a second direction; the magnetic fields in the first direction and the second direction are orthogonal to each other; AMR (adaptive multi-rate) magnetoresistive sensing elements or GMR (giant magneto resistive) or TMR (triple magneto resistive) magnetoresistive sensing elements are arranged in the first group of Wheatstone bridges and the second group of Wheatstone bridges; the isotropy measurement of the magnetic field by a single chip can be realized through different bridge configurations and measurement modes.
Description
Technical Field
The invention relates to the technical field of magnetic sensors, in particular to a magnetic resistance magnetic switch sensor.
Background
In the fields of consumer electronics, industrial control and the like, there are applications that it is desirable to realize isotropic detection of a magnetic field, that is, as long as the magnetic field is the same in magnitude, magnetic sensors all have substantially the same response to different magnetic field directions; in order to meet the requirement, a plurality of magnetic sensors can be installed according to different detection directions, magnetic field components in all directions are measured respectively, and then the data of the plurality of sensors are subjected to numerical operation to realize response; however, the implementation mode is complex to install, occupies a large space, has high cost and needs extra calculation amount, and is inconvenient to use in practice;
the magnetoresistive sensor can be manufactured by semiconductor processSo as to integrate the magnetic resistance sensors with different sensing directions on one chip, and realize the detection of magnetic fields in two or more orthogonal directions. Commonly used magnetoresistive sensors are classified into Anisotropic Magnetoresistance (AMR), giant Magnetoresistance (GMR), and Tunnel Magnetoresistance (TMR), which mainly sense a magnetic field in a plane in which the sensor is located; however, the sensing principles and characteristics of the three types of magnetoresistance, AMR, GMR and TMR, are not the same. The reluctance change rule of AMR is Δ R cos θ, wherein R is the reluctance change rate, and θ is an included angle between the magnetic moment and the current; the magnetoresistance change law of GMR and TMR is similar
Wherein
R is the rate of change of the magnetic resistance,
is the included angle between the free layer and the pinning layer magnetic moment;
compared with other magnetic sensor technologies, the magnetic resistance sensor has the advantages of high sensitivity and adjustable sensing threshold point, and can meet the requirement that a single chip can realize the detection of isotropic magnetic fields with different sizes by combining a semiconductor manufacturing process;
in view of the above, there is a need to provide a new magnetic resistance switch sensor, which realizes the isotropic detection of the magnetic field by a single chip.
Disclosure of Invention
It is an object of the present invention to provide a magnetoresistive magnetic switching sensor that solves the problems set forth in the background above.
In order to solve the technical problems, the invention provides the following technical scheme:
a magnetoresistive magnetic switching sensor, comprising: a first set of Wheatstone bridges and a second set of Wheatstone bridges; the first group of Wheatstone bridges and the second group of Wheatstone bridges form an AMR magnetic resistance switch sensor or a GMR or TMR magnetic resistance switch sensor; the first group of Wheatstone bridges and the second group of Wheatstone bridges are used for inducing magnetic fields in a first direction and a second direction; the magnetic fields in the first direction and the second direction are orthogonal to each other; AMR (adaptive multi-rate) magnetoresistive sensing elements or GMR (giant magneto resistive) or TMR (triple magneto resistive) magnetoresistive sensing elements are arranged in the first group of Wheatstone bridges and the second group of Wheatstone bridges;
when the first group of Wheatstone bridges and the second group of Wheatstone bridges form an AMR magnetoresistive magnetic switch sensor, AMR magnetoresistive sensing elements are arranged in the first group of Wheatstone bridges and the second group of Wheatstone bridges; the first group of Wheatstone bridges in the AMR magnetoresistive magnetic switching sensor can partially and simultaneously sense the magnetic fields in the first direction and the second direction, and the second group of Wheatstone bridges in the AMR magnetoresistive magnetic switching sensor can partially and simultaneously sense the magnetic fields in the first direction and the second direction;
the sensing mode of the AMR magnetic resistance magnetic switch sensor is as follows: the direction angle of the composite magnetic field of the first direction and the second direction is alpha, and the magnitude is H. For a range of magnetic fields, the resistance change of the first set of Wheatstone bridges is approximately proportional to
The resistance change of the second set of Wheatstone bridges is approximately proportional to
；
When the first group of Wheatstone bridges and the second group of Wheatstone bridges form GMR or TMR magneto-resistive magnetic switch sensors, GMR or TMR magneto-resistive sensing elements are arranged in the first group of Wheatstone bridges and the second group of Wheatstone bridges; a first group of Wheatstone bridges in the GMR or TMR magnetic switch sensor mainly sense a magnetic field in a first direction, and a second group of Wheatstone bridges in the GMR or TMR magnetic switch sensor mainly sense a magnetic field in a second direction;
the GMR or TMR magnetic resistance magnetic switch sensor has the following sensing modes: the magnitude of the first-direction magnetic field is H1, the magnitude of the second-direction magnetic field is H2, and the magnitude of the resultant magnetic field of the first direction and the second direction is H. For a range of magnetic fields, the resistance change of the first set of Wheatstone bridges is approximately proportional to H1, and the resistance change of the second set of Wheatstone bridges is approximately proportional to H2.
Preferably, the first group of Wheatstone bridges and the second group of Wheatstone bridges are respectively provided with a plurality of bridge arms, and the four bridge arms form a full bridge.
Preferably, the first group of wheatstone bridges and the second group of wheatstone bridges are respectively provided with a plurality of bridge arms, and the two bridge arms form a half bridge.
Preferably, a plurality of AMR magnetoresistive sensing elements or GMR or TMR magnetoresistive sensing elements are arranged in the bridge arm; the AMR magnetic resistance sensing element is formed by etching a magnetic resistance film; the GMR or TMR magnetic resistance sensing element is formed by etching a free layer, a pinning layer, an intermediate layer or a tunneling layer multi-layer magnetic film;
preferably, the AMR magnetoresistance sensing element or the GMR or TMR magnetoresistance sensing element is etched in a linear line shape from a magnetoresistance thin film.
Preferably, the AMR magnetoresistance sensing element or the GMR or TMR magnetoresistance sensing element is etched from the magnetoresistive thin film into a curved line shape including, but not limited to, a circular arc shape and a wave shape.
Preferably, the AMR magnetoresistive sensing elements in the first and second sets of Wheatstone bridges are arranged at 45 ° rotation from each other.
Preferably, the GMR or TMR magnetoresistive sensing elements in the first and second sets of wheatstone bridges are arranged rotated 90 ° with respect to each other while keeping pinned magnetic moment directions of pinned layers of the GMR or TMR magnetoresistive sensing elements in the first and second sets of wheatstone bridges parallel to each other.
Preferably, the GMR or TMR magnetoresistive sensing elements in the first and second sets of Wheatstone bridges are arranged parallel to each other, while pinned magnetic moment directions of pinned layers of the GMR or TMR magnetoresistive sensing elements in the first and second sets of Wheatstone bridges are kept at an angle of 90 °.
Preferably, the output signal of the first group of wheatstone bridges is V1, and the zero offset1 is subtracted from the V1 signal to obtain a signal V1' reflecting the magnitudes of the magnetic fields in the first direction and the second direction; the output signal of the second set of wheatstone bridges is V2, the zero offset2 is subtracted from the V2 signal to obtain a signal V2 ' reflecting the magnitude of the magnetic field in the first direction and the second direction, a signal V = sqrt (V1 ' + V2 ') reflecting the magnitude of the superimposed magnetic field in the first direction and the second direction in an isotropic manner can be obtained according to V1 ' and V2 ', and the isotropic response of the magnetoresistive switch sensor to the external magnetic field can be obtained according to the signal V reflecting the magnitude of the superimposed magnetic field and the threshold point set by the magnetic switch.
Compared with the prior art, the invention has the following beneficial effects:
the novel magnetic resistance magnetic switch sensor provided by the invention can realize isotropic measurement of a magnetic field by a single chip through different bridge configurations and measurement modes; two bridge arms are arranged to form a half bridge, so that the area used by a chip can be reduced in the production and manufacturing process of the bridge, and the production cost is further reduced; by etching the magnetic resistance sensing element into a curved line shape, including but not limited to circular arc shape and wave shape, the magnetic resistance sensing element adopting the curved line can obviously reduce hysteresis error and improve the detection precision of the magnetic switch sensor.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram of a first embodiment of an AMR magnetoresistive magnetic switching sensor;
FIG. 2 is a schematic diagram of a second embodiment of an AMR magnetoresistive magnetic switching sensor;
FIG. 3 is a schematic diagram of one embodiment of an AMR magnetoresistive magnetic switching sensor;
FIG. 4 is a schematic diagram of a first embodiment of a GMR or TMR magnetoresistive magnetic switching sensor;
FIG. 5 is a schematic diagram of a second embodiment of a GMR or TMR magnetoresistive magnetic switch sensor;
FIG. 6 is a schematic diagram of one embodiment of a GMR or TMR magnetoresistive magnetic switch sensor;
FIG. 7 is a schematic diagram of another embodiment of a GMR or TMR magnetoresistive magnetic switching sensor.
In the figure: 1. a first set of Wheatstone bridges; 2. a second set of Wheatstone bridges; 3. an AMR magnetoresistive sensing element; 4. GMR or TMR magnetoresistive sensing elements.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides the technical scheme that:
a magnetoresistive magnetic switching sensor, referring to fig. 1, comprising: a first set of wheatstone bridges 1 and a second set of wheatstone bridges 2; the first group of Wheatstone bridges 1 and the second group of Wheatstone bridges 2 form an AMR magnetoresistive magnetic switch sensor; AMR magnetoresistive sensing elements 3 are arranged in the first group of Wheatstone bridges 1 and the second group of Wheatstone bridges 2; a first group of Wheatstone bridges 1 in the AMR magnetoresistive magnetic switching sensor can partially and simultaneously sense magnetic fields in a first direction and a second direction, and a second group of Wheatstone bridges 2 in the AMR magnetoresistive magnetic switching sensor can partially and simultaneously sense magnetic fields in the first direction and the second direction; the magnetic field in the first direction is orthogonal to the magnetic field in the second direction; the AMR magnetoresistive sensing elements 3 in the first set of wheatstone bridges 1 and in the second set of wheatstone bridges 2 are arranged mutually rotated by 45 °;
when the magnetoresistive magnetic switch sensor is an AMR magnetoresistive magnetic switch sensor, the output signal of a first group of Wheatstone bridges 1 in the AMR magnetoresistive magnetic switch sensor is V1, and the zero offset1 is subtracted from the V1 signal to obtain a signal V1' which partially reflects the magnitude of the magnetic field in the first direction and the second direction; the output signal of the second set of wheatstone bridges 2 is V2, the zero offset2 is subtracted from the V2 signal to obtain another signal V2 ' partially reflecting the magnitudes of the magnetic fields in the first direction and the second direction, and a signal V = sqrt (V1 ' + V2 ') isotropically reflecting the magnitude of the total superimposed magnetic field in the first direction and the second direction can be obtained according to V1 ' and V2 ';
according to the signal reflecting the magnitude of the total superposed magnetic field and the threshold point set by the magnetic switch, the isotropic response of the magnetic resistance magnetic switch sensor to the external magnetic field can be obtained; one level is output when the signal V is greater than the magnetic switch threshold point, and the other level is output when the signal V is less than the magnetic switch threshold point.
The first embodiment is as follows:
the first group of Wheatstone bridges 1 consists of full bridges consisting of four bridge arms; the second group of Wheatstone bridges 2 consists of full bridges consisting of four bridge arms;
each bridge arm of the first group of Wheatstone bridges 1 and the second group of Wheatstone bridges 2 consists of a plurality of AMR magnetoresistive sensing elements 3;
the AMR magnetoresistive sensing element 3 is etched from a magnetoresistive thin film into a linear line shape.
Example two, as depicted in fig. 2:
the first group of Wheatstone bridges 1 consists of a half bridge consisting of two bridge arms; the second group of Wheatstone bridges 2 consists of a half bridge consisting of two bridge arms; by using the half-bridge structure, the signal amplitude can be reduced by half theoretically, but the area used by a chip can be reduced, so that the production cost is reduced;
each bridge arm of the first group of Wheatstone bridges 1 and the second group of Wheatstone bridges 2 consists of a plurality of AMR magnetoresistive sensing elements 3;
as an embodiment of the present invention, as shown in fig. 3, the first group of wheatstone bridges 1 is a full bridge including four arms, and the second group of wheatstone bridges 2 is a full bridge including four arms; each bridge arm of the first group of Wheatstone bridges 1 and the second group of Wheatstone bridges 2 consists of a plurality of AMR magnetoresistive sensing elements 3; the AMR magnetoresistive sensing element 3 is formed by etching a magnetoresistive film into a curved line shape, including but not limited to an arc shape and a wave shape;
the use of the curved strip-shaped AMR magnetoresistive sensing elements 3 can significantly reduce hysteresis errors and improve the detection accuracy of the magnetic switching sensor.
A magnetoresistive magnetic switching sensor, referring to fig. 4, comprising: a first set of wheatstone bridges 1 and a second set of wheatstone bridges 2; when the first group of Wheatstone bridges 1 and the second group of Wheatstone bridges 2 form GMR or TMR magneto-resistive switch sensors, GMR or TMR magneto-resistive sensing elements 4 are arranged in the first group of Wheatstone bridges 1 and the second group of Wheatstone bridges 2; a first set of wheatstone bridges 1 in the GMR or TMR magnetoresistive magnetic switch sensor mainly sense a magnetic field in a first direction, and a second set of wheatstone bridges 2 in the GMR or TMR magnetoresistive magnetic switch sensor mainly sense a magnetic field in a second direction; the magnetic field in the first direction is orthogonal to the magnetic field in the second direction;
when the magnetic resistance magnetic switch sensor is GMR or TMR magnetic resistance magnetic switch sensor, the output signal of a first group of Wheatstone bridge 1 in the GMR or TMR magnetic resistance magnetic switch sensor is V1, and the zero offset1 is subtracted from the V1 signal to obtain a signal V1' which mainly reflects the size of the magnetic field in the first direction; the output signal of the second set of wheatstone bridges 2 is V2, the zero offset2 is subtracted from the V2 signal to obtain a signal V2 ' mainly reflecting the magnitude of the magnetic field in the second direction, and a signal V = sqrt (V1 ' + V2 ') isotropically reflecting the magnitudes of the superimposed magnetic fields in the first direction and the second direction can be obtained according to V1 ' and V2 ';
according to the signal reflecting the size of the superposed magnetic field and the threshold value point set by the magnetic switch, the isotropic response of the magnetic resistance magnetic switch sensor to the external magnetic field can be obtained, when the signal V is greater than the magnetic switch threshold value point, one level is output, and when the signal V is less than the magnetic switch threshold value point, the other level is output.
The first embodiment is as follows:
the first group of Wheatstone bridges 1 consists of full bridges consisting of four bridge arms; the second group of Wheatstone bridges 2 consists of full bridges consisting of four bridge arms;
each bridge arm of the first group of Wheatstone bridges 1 and the second group of Wheatstone bridges 2 consists of a plurality of GMR or TMR magneto-resistive sensing elements 4;
the GMR or TMR magnetoresistive sensing element 4 is formed by etching a free layer, a pinning layer, an intermediate layer or a tunneling layer multi-layer magnetic film; the GMR or TMR magneto-resistive sensing element 4 is formed by etching a plurality of layers of magneto-resistive films into a linear line shape;
the GMR or TMR magnetoresistive sensing elements 4 of the first and second Wheatstone bridges 1 and 2 are arranged by rotating at an angle of 90 DEG with each other, while keeping the pinning magnetic moment directions of the pinning layers of the GMR or TMR magnetoresistive sensing elements 4 of the first and second Wheatstone bridges 1 and 2 parallel with each other (the arrow directions shown in FIG. 4 are the pinning magnetic moment directions of the pinning layers);
in the second embodiment, as shown in fig. 5,
the first group of Wheatstone bridges 1 consists of a half bridge consisting of two bridge arms; the second group of Wheatstone bridges 2 consists of a half bridge consisting of two bridge arms;
each bridge arm of the first group of Wheatstone bridges 1 and the second group of Wheatstone bridges 2 consists of a plurality of GMR or TMR magnetic resistance sensing elements 4 (the direction of an arrow shown in FIG. 5 is the pinning magnetic moment direction of a pinning layer of the GMR or TMR magnetic resistance sensing elements 4); by using the half-bridge structure, the signal amplitude can be reduced by half theoretically, but the area used by a chip can be reduced, and further the production cost is reduced.
As an embodiment of the present invention, as shown in fig. 6, the first group of wheatstone bridges 1 is a full bridge including four arms, and the second group of wheatstone bridges 2 is a full bridge including four arms; each bridge arm of the first group of Wheatstone bridges 1 and the second group of Wheatstone bridges 2 consists of a plurality of GMR or TMR magneto-resistive sensing elements 4;
the GMR or TMR magnetoresistive sensing element 4 is formed by etching a multilayer magnetic thin film into a curved line shape including, but not limited to, a circular arc shape and a wave shape (the arrow direction shown in fig. 6 is the pinned magnetic moment direction of the pinned layer of the GMR or TMR magnetoresistive sensing element 4);
the use of the curved linear GMR or TMR magnetoresistive sensing elements 4 can significantly reduce the hysteresis error and improve the detection accuracy of the magnetic switching sensor.
As an embodiment of the present invention, as shown in fig. 7, the GMR or TMR magnetoresistive sensing element 4 of the first and second groups of wheatstone bridges 1 and 2 are arranged in parallel with each other, while the pinned magnetic moment directions of the pinned layers of the GMR or TMR magnetoresistive sensing element 4 of the first and second groups of wheatstone bridges 1 and 2 are kept at an angle of 90 ° (the arrow direction shown in fig. 7 is the pinned magnetic moment direction of the pinned layer);
by using a specific pinning annealing process, the magnetic moments of pinning layers in different regions of the same chip are controlled in different set directions, and the first group of Wheatstone bridges 1 and the second group of Wheatstone bridges 2 which are in the same structural layout achieve the aim of respectively measuring magnetic fields in the first direction and the second direction.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described above, or equivalents may be substituted for elements thereof. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A magnetoresistive magnetic switching sensor, characterized by: the method comprises the following steps: a first set of Wheatstone bridges and a second set of Wheatstone bridges; the first group of Wheatstone bridges and the second group of Wheatstone bridges are used for inducing magnetic fields in a first direction and a second direction; the magnetic fields in the first direction and the second direction are orthogonal to each other; and AMR magneto-resistive sensing elements or GMR or TMR magneto-resistive sensing elements are arranged in the first group of Wheatstone bridges and the second group of Wheatstone bridges.
2. A magnetoresistive magnetic switching sensor as claimed in claim 1 wherein: the first group of Wheatstone bridges and the second group of Wheatstone bridges are provided with a plurality of bridge arms, and the four bridge arms form a full bridge.
3. A magnetoresistive magnetic switching sensor as claimed in claim 1 wherein: the first group of Wheatstone bridges and the second group of Wheatstone bridges are respectively provided with a plurality of bridge arms, and the two bridge arms form a half bridge.
4. A magnetoresistive magnetic switching sensor as claimed in any one of claims 2 or 3 wherein: a plurality of AMR (adaptive multi-rate) magnetoresistive sensing elements or GMR (giant magneto resistive) or TMR (triple magneto resistive) magnetoresistive sensing elements are arranged in the bridge arm; the AMR magnetic resistance sensing element is formed by etching a magnetic resistance film; the GMR or TMR magnetoresistive sensing element is formed by etching a free layer, a pinned layer, an intermediate layer or a tunneling layer multilayer magnetic film.
5. A magnetoresistive magnetic switching sensor as claimed in claim 4 wherein: the AMR magnetoresistive sensing element or GMR or TMR magnetoresistive sensing element is etched into a linear line shape by a magnetoresistive film.
6. A magnetoresistive magnetic switching sensor as claimed in claim 4 wherein: the AMR magnetoresistive sensing element or GMR or TMR magnetoresistive sensing element is formed by etching a magnetoresistive film into a curved line shape, including but not limited to a circular arc shape and a wave shape.
7. A magnetoresistive magnetic switching sensor as claimed in claim 1 wherein: the AMR magnetoresistive sensing elements in the first and second sets of Wheatstone bridges are arranged rotated 45 from each other.
8. A magnetoresistive magnetic switching sensor as claimed in claim 1 wherein: the GMR or TMR magnetoresistive sensing elements in the first and second sets of Wheatstone bridges are arranged rotated 90 DEG from each other while keeping pinned magnetic moment directions of pinned layers of the GMR or TMR magnetoresistive sensing elements in the first and second sets of Wheatstone bridges parallel to each other.
9. A magnetoresistive magnetic switching sensor as claimed in claim 1 wherein: the GMR or TMR magnetoresistive sensing elements in the first and second sets of Wheatstone bridges are arranged in parallel with each other, while pinned magnetic moment directions of pinned layers of the GMR or TMR magnetoresistive sensing elements in the first and second sets of Wheatstone bridges maintain an included angle of 90 deg.
10. A magnetoresistive magnetic switching sensor as claimed in claim 1 wherein: the output signal of the first group of Wheatstone bridges is V1, and the zero offset1 is subtracted from the V1 signal to obtain a signal V1' reflecting the magnitude of the magnetic field in the first direction and the second direction; the output signal of the second group of Wheatstone bridges is V2, the zero offset2 is subtracted from the V2 signal to obtain a signal V2 ' reflecting the magnitudes of the magnetic fields in the first direction and the second direction, a signal V = sqrt (V1 ' + V2 ') reflecting the magnitudes of the superimposed magnetic fields in the first direction and the second direction isotropically can be obtained according to V1 ' and V2 ', and the isotropic response of the magneto-resistive magnetic switch sensor to the external magnetic field can be obtained according to the signal V reflecting the magnitudes of the superimposed magnetic fields and the threshold point set by the magnetic switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211166139.4A CN115267623B (en) | 2022-09-23 | 2022-09-23 | Magneto-resistance magnetic switch sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211166139.4A CN115267623B (en) | 2022-09-23 | 2022-09-23 | Magneto-resistance magnetic switch sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115267623A true CN115267623A (en) | 2022-11-01 |
| CN115267623B CN115267623B (en) | 2023-10-20 |
Family
ID=83757632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211166139.4A Active CN115267623B (en) | 2022-09-23 | 2022-09-23 | Magneto-resistance magnetic switch sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115267623B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115856731A (en) * | 2022-11-25 | 2023-03-28 | 南方电网数字电网研究院有限公司 | Magnetic field sensor and voltage measuring method |
| CN116699482A (en) * | 2023-08-08 | 2023-09-05 | 北京智芯微电子科技有限公司 | Magnetic sensor and anti-fraudulent use electric energy meter |
Citations (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004074764A2 (en) * | 2003-02-24 | 2004-09-02 | Hl-Planar Technik Gmbh | Magnetoresistive sensor for determining an angle or a position |
| CN1667412A (en) * | 2004-12-31 | 2005-09-14 | 中山大学 | Biological detection device and method utilizing immune bead |
| CN1694277A (en) * | 2004-03-12 | 2005-11-09 | 雅马哈株式会社 | Method for manufacturing magnetic sensor, magnet array and method for manufacturing the magnet array |
| JP2010008160A (en) * | 2008-06-25 | 2010-01-14 | Hitachi Metals Ltd | Magnetic sensor and rotation angle detector |
| CN102047134A (en) * | 2008-03-26 | 2011-05-04 | 艾沃思宾技术公司 | Improved magnetic sensor design for suppression of barkhausen noise |
| CN102292773A (en) * | 2009-09-25 | 2011-12-21 | 艾沃思宾技术公司 | Three axis magnetic field sensor |
| CN102435963A (en) * | 2011-04-06 | 2012-05-02 | 江苏多维科技有限公司 | Monolithic dual-axis bridge-type magnetic field sensor |
| CN102621504A (en) * | 2011-04-21 | 2012-08-01 | 江苏多维科技有限公司 | Monolithic reference full bridge magnetic field sensor |
| CN102867909A (en) * | 2011-07-04 | 2013-01-09 | 山梨日本电气株式会社 | Magnetoresistance element and magnetic sensor using the same |
| CN103267955A (en) * | 2013-05-28 | 2013-08-28 | 江苏多维科技有限公司 | Single-chip bridge-type magnetic field sensor |
| JP2013195345A (en) * | 2012-03-22 | 2013-09-30 | Murata Mfg Co Ltd | Magnetic sensor |
| JP2013195346A (en) * | 2012-03-22 | 2013-09-30 | Murata Mfg Co Ltd | Magnetic sensor |
| CN103988311A (en) * | 2011-10-31 | 2014-08-13 | 艾沃思宾技术公司 | Apparatus and method for reset and stabilization control of a magnetic sensor |
| CN104919328A (en) * | 2013-01-18 | 2015-09-16 | 株式会社村田制作所 | Magnetic sensor and production method therefor |
| JP2016223894A (en) * | 2015-05-29 | 2016-12-28 | 株式会社村田製作所 | Magnetic sensor |
| CN109212439A (en) * | 2017-07-05 | 2019-01-15 | 亚德诺半导体集团 | Magnetic field sensor |
| CN109633496A (en) * | 2018-12-27 | 2019-04-16 | 北京航空航天大学青岛研究院 | Single, double axis magnetic field sensor and preparation method and equipment |
| CN109752676A (en) * | 2019-01-10 | 2019-05-14 | 东南大学 | A kind of improvement Wheatstone bridge formula thin-film magnetoresistive sensor |
| CN110081813A (en) * | 2018-12-18 | 2019-08-02 | 贵州雅光电子科技股份有限公司 | A kind of production method of the AMR sensor chip of two times of angle sinewave outputs |
| CN110132124A (en) * | 2019-05-06 | 2019-08-16 | 微传智能科技（常州）有限公司 | Magnetic degree sensor and magnetic degree sensing device |
| CN110914697A (en) * | 2017-07-21 | 2020-03-24 | 德克萨斯仪器股份有限公司 | Anisotropic Magnetoresistive (AMR) angle sensor |
| CN210775815U (en) * | 2019-09-25 | 2020-06-16 | 三峡大学 | Probe for measuring broadband transient magnetic field |
| CN113030803A (en) * | 2021-03-01 | 2021-06-25 | 歌尔微电子股份有限公司 | Magnetic sensor, method for manufacturing magnetic sensor, and electronic device |
| CN114415087A (en) * | 2022-03-29 | 2022-04-29 | 北京芯可鉴科技有限公司 | Magnetic sensor, circuit and electric energy meter |
-
2022
- 2022-09-23 CN CN202211166139.4A patent/CN115267623B/en active Active
Patent Citations (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004074764A2 (en) * | 2003-02-24 | 2004-09-02 | Hl-Planar Technik Gmbh | Magnetoresistive sensor for determining an angle or a position |
| CN1754080A (en) * | 2003-02-24 | 2006-03-29 | Hl-平面技术有限公司 | Magnetoresistive sensor for determining an angle or a position |
| CN1694277A (en) * | 2004-03-12 | 2005-11-09 | 雅马哈株式会社 | Method for manufacturing magnetic sensor, magnet array and method for manufacturing the magnet array |
| CN1667412A (en) * | 2004-12-31 | 2005-09-14 | 中山大学 | Biological detection device and method utilizing immune bead |
| CN102047134A (en) * | 2008-03-26 | 2011-05-04 | 艾沃思宾技术公司 | Improved magnetic sensor design for suppression of barkhausen noise |
| JP2010008160A (en) * | 2008-06-25 | 2010-01-14 | Hitachi Metals Ltd | Magnetic sensor and rotation angle detector |
| CN102292773A (en) * | 2009-09-25 | 2011-12-21 | 艾沃思宾技术公司 | Three axis magnetic field sensor |
| CN102435963A (en) * | 2011-04-06 | 2012-05-02 | 江苏多维科技有限公司 | Monolithic dual-axis bridge-type magnetic field sensor |
| CN102621504A (en) * | 2011-04-21 | 2012-08-01 | 江苏多维科技有限公司 | Monolithic reference full bridge magnetic field sensor |
| CN102867909A (en) * | 2011-07-04 | 2013-01-09 | 山梨日本电气株式会社 | Magnetoresistance element and magnetic sensor using the same |
| CN103988311A (en) * | 2011-10-31 | 2014-08-13 | 艾沃思宾技术公司 | Apparatus and method for reset and stabilization control of a magnetic sensor |
| JP2013195346A (en) * | 2012-03-22 | 2013-09-30 | Murata Mfg Co Ltd | Magnetic sensor |
| JP2013195345A (en) * | 2012-03-22 | 2013-09-30 | Murata Mfg Co Ltd | Magnetic sensor |
| CN104919328A (en) * | 2013-01-18 | 2015-09-16 | 株式会社村田制作所 | Magnetic sensor and production method therefor |
| CN103267955A (en) * | 2013-05-28 | 2013-08-28 | 江苏多维科技有限公司 | Single-chip bridge-type magnetic field sensor |
| JP2016223894A (en) * | 2015-05-29 | 2016-12-28 | 株式会社村田製作所 | Magnetic sensor |
| CN109212439A (en) * | 2017-07-05 | 2019-01-15 | 亚德诺半导体集团 | Magnetic field sensor |
| CN110914697A (en) * | 2017-07-21 | 2020-03-24 | 德克萨斯仪器股份有限公司 | Anisotropic Magnetoresistive (AMR) angle sensor |
| CN110081813A (en) * | 2018-12-18 | 2019-08-02 | 贵州雅光电子科技股份有限公司 | A kind of production method of the AMR sensor chip of two times of angle sinewave outputs |
| CN109633496A (en) * | 2018-12-27 | 2019-04-16 | 北京航空航天大学青岛研究院 | Single, double axis magnetic field sensor and preparation method and equipment |
| CN109752676A (en) * | 2019-01-10 | 2019-05-14 | 东南大学 | A kind of improvement Wheatstone bridge formula thin-film magnetoresistive sensor |
| CN110132124A (en) * | 2019-05-06 | 2019-08-16 | 微传智能科技（常州）有限公司 | Magnetic degree sensor and magnetic degree sensing device |
| CN210775815U (en) * | 2019-09-25 | 2020-06-16 | 三峡大学 | Probe for measuring broadband transient magnetic field |
| CN113030803A (en) * | 2021-03-01 | 2021-06-25 | 歌尔微电子股份有限公司 | Magnetic sensor, method for manufacturing magnetic sensor, and electronic device |
| CN114415087A (en) * | 2022-03-29 | 2022-04-29 | 北京芯可鉴科技有限公司 | Magnetic sensor, circuit and electric energy meter |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115856731A (en) * | 2022-11-25 | 2023-03-28 | 南方电网数字电网研究院有限公司 | Magnetic field sensor and voltage measuring method |
| CN115856731B (en) * | 2022-11-25 | 2024-03-26 | 南方电网数字电网研究院有限公司 | Magnetic field sensor and voltage measurement method |
| CN116699482A (en) * | 2023-08-08 | 2023-09-05 | 北京智芯微电子科技有限公司 | Magnetic sensor and anti-fraudulent use electric energy meter |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115267623B (en) | 2023-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8638090B2 (en) | Magnetic sensor system and method | |
| CN115267623A (en) | Magnetic resistance magnetic switch sensor | |
| JP5973498B2 (en) | Magnetic angle sensor and magnetic tunnel junction element | |
| Giebeler et al. | Robust GMR sensors for angle detection and rotation speed sensing | |
| RU2328015C2 (en) | Sensitive element with giant magnetic resistance and its application | |
| EP2682772B1 (en) | Individually packaged magnetoresistance angle sensor | |
| EP3029479B1 (en) | Singlechip push-pull bridge type magnetic field sensor | |
| US9207290B2 (en) | Magnetic field sensor for sensing external magnetic field | |
| EP2284555B1 (en) | Magnetic sensor including a bridge circuit | |
| JP4951129B2 (en) | Magnetization method of MR element | |
| US9810748B2 (en) | Tunneling magneto-resistor device for sensing a magnetic field | |
| WO2012116659A1 (en) | Separately packaged bridge magnetic-field angle sensor | |
| US11313923B2 (en) | Method for measuring a magnetic field using a magnetic field sensor device having a second magnetic field sensor between parts of a first magnetic field sensor | |
| JP7246400B2 (en) | Systems and methods for reducing angular error for magnetic field angle sensors | |
| CN113167846B (en) | Magnetic sensor with series resistors for asymmetric sense field range | |
| US11598828B2 (en) | Magnetic sensor array with different RA TMR film | |
| US20230251331A1 (en) | Sensor unit | |
| WO2022183826A1 (en) | Magnetic sensor and manufacturing method therefor, and electronic device | |
| CN103383441B (en) | A kind of digital spin valve magnetic field sensor and technology of preparing thereof | |
| JP5007916B2 (en) | Magnetic sensor | |
| CN214585084U (en) | Magnetic sensor and nondestructive testing device based on magnetic sensor | |
| CN115329707A (en) | Design method of angle sensing chip based on anisotropic magnetoresistance effect | |
| AU759533B2 (en) | Electronic component | |
| JP2010112881A (en) | Magnetic encoder | |
| CN113167847B (en) | Magnetic sensor array with dual TMR films |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |