CN102435963A - Monolithic dual-axis bridge-type magnetic field sensor - Google Patents
Monolithic dual-axis bridge-type magnetic field sensor Download PDFInfo
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Abstract
The invention discloses a monolithic dual-axis bridge-type magnetic field sensor. In the dual-axis bridge-type magnetic field sensor, a magnetic tunnel junction resistance element is used to prepare two kinds of whole-bridge magnetic field sensors on a same semiconductor substrate so as to induct an orthogonal magnetic field component. Through setting a shape of a sensing element and a permanent magnet offset field, the sensors can induct the orthogonal magnetic field component. An offset permanent magnet of the orthogonal bridge type sensor and a reference layer are initialized at a same magnetic field direction. A special technology is not needed. Local heating is performed or other magnetic materials are deposited in different operations so as to realize the dual-axis magnetic field sensor.
Description
Technical field
The present invention relates to the design and the preparation of bridge type magnetic sensor, specifically a kind of one chip twin shaft bridge-type magnetic field sensor.
Background technology
Magnetic sensor is widely used in the modern system to measure or physical parameters such as induced field intensity, electric current, position, motion, direction.In the prior art, there are many sensors of various types to be used to measure magnetic field and other parameters.But they have received various well-known restriction of the prior art, and for example oversize, sensitivity is low, narrow dynamic range, and cost is high, low and other factors of reliability.Therefore, improve Magnetic Sensor constantly, particularly improve the sensor and the manufacturing approach thereof that are prone to integrate and be necessary with semiconductor devices or integrated circuit.
Advantages such as tunnel junction magnetic resistance sensor (MTJ, Magnetic Tunnel Junction) has high sensitivity, and size is little, and cost is low and low in energy consumption.Although mtj sensor is compatible mutually with semiconductor standard manufacture technology, highly sensitive mtj sensor is not realized low-cost large-scale production.Particularly the yield rate of sensor depends on the off-set value of MTJ element magnetic resistance output, and the magnetic resistance of forming the MTJ of electric bridge is difficult to the matching degree that reaches high, and quadrature field sensor integrated manufacturing process on same semiconductor chip is very complicated simultaneously.
Summary of the invention
The invention provides a kind of linear magnetic resistance sensor chip production method of twin shaft that adopts standard semiconductor fabrication techniques, is used for large-scale production.The twin shaft sensor adopts tunnel junction magnetoresistive element or giant magnetoresistance (GMR) element on same semiconductor chip, to prepare two different bridge-type Magnetic Sensors with induction quadrature field component.The twin shaft Magnetic Sensor can be responded to the geometric configuration that the quadrature field component depends on sensing element.Bridge type magnetic sensor can be more stable behind the permanent magnet bias layer through being provided with, magnetic layer the wafer rank or after encapsulation through the initialization in high-intensity magnetic field of same operation.Because the permanent magnet bias layer of bridge type magnetic sensor and reference layer are along same direction initialization, not through special processing, spot heating perhaps deposits different magnetic materials in different operations.
The invention provides a kind of monolithic twin shaft bridge-type magnetic field sensor; It comprises one along " Y " direction of principal axis responsive a reference bridge type magnetic sensor and a push-pull bridge sensor along " X " direction of principal axis sensitivity; Saidly comprise reference element and sensing element with reference to bridge type magnetic sensor; Said push-pull bridge sensor comprises sensing element, wherein " X " axle and " Y " quadrature spool mutually.
Preferably, said is with reference to full-bridge sensors with reference to bridge type magnetic sensor, and this comprises reference element and sensing element with reference to full-bridge sensors, and said push-pull bridge sensor is for recommending full-bridge sensors.
Preferably, it comprises that also the permanent magnet that is used to setover is to be provided with said reference element and poor sensitivity between the sensing element and said free layer DOM of recommending the sensing element of full-bridge sensors with reference to full-bridge sensors.
Preferably, the said shape that has magnetic anisotropy with reference to the reference element and the sensing element of full-bridge sensors to be to be provided with the poor sensitivity between them, recommends shape that the sensing element of full-bridge sensors has magnetic anisotropy so that its free layer DOM to be set.
Preferably, said is with reference to the half-bridge sensor with reference to bridge type magnetic sensor, and said push-pull bridge sensor is for recommending the half-bridge sensor.
Preferably, it comprises that also the permanent magnet that is used to setover is to be provided with said reference element and poor sensitivity between the sensing element and said free layer DOM of recommending the sensing element of half-bridge sensor with reference to the half-bridge sensor.
Preferably; The said shape that has magnetic anisotropy with reference to the reference element and the sensing element of half-bridge sensor is to be provided with the poor sensitivity between them, and said sensing element of recommending the half-bridge sensor has the shape of magnetic anisotropy so that its free layer DOM to be set.
Preferably, saidly comprise reference arm and sensing arm with reference to bridge type magnetic sensor.
Preferably, said with reference to bridge type magnetic sensor comprise one be used to envelope the magnetoresistive element that constitutes reference arm screen layer to reduce the sensitivity of reference arm, said screen layer is the ferromagnetic material of high magnetic permeability.
Preferably, said sensing element periphery with reference to bridge type magnetic sensor is provided with the sensitivity of the ferromagnetic material of high magnetic permeability with the increase sensing element.。
The present invention adopts above structure, can realize low cost integrated making on same semiconductor chip on a large scale.
Description of drawings
Fig. 1 is the synoptic diagram of tunnel junction magneto-resistor.
Fig. 2 is that the reference layer DOM is the output synoptic diagram of the spin valve magnetic resistive element of hard axis.
Fig. 3 is a connection synoptic diagram of a plurality of magnetic tunnel junction elements being merged into an equivalent magnetoresistive element.
Fig. 4 is the schematic diagram of linear reference full-bridge magnetic resistance sensor.
Fig. 5 is a kind of layout that adopts permanent magnet bias to produce the reference full-bridge sensors of intersection bias-field.
Fig. 6 be with reference to full-bridge sensors at externally-applied magnetic field along the response diagram under the component effect of sensitive direction.
Fig. 7 be with reference to full-bridge sensors at externally-applied magnetic field perpendicular to the response diagram under the component effect of sensitive direction.
Fig. 8 is the analog result with reference to the curve of output of full-bridge magnetic resistance sensor.
Fig. 9 is linear schematic diagram of recommending the full-bridge magnetic resistance sensor.
Figure 10 utilizes a kind of concept map of recommending full-bridge sensors of shape anisotropic ability and permanent magnet biasing.Magnet structure is used to produce bias magnetic field, and the free layer DOM of rotation is used for producing recommends curve of output.
Figure 11 be free layer DOM rotation recommend the full-bridge magnetic resistance sensor in the outfield along the response diagram under the component effect of sensitive direction.
Figure 12 be free layer DOM rotation recommend the full-bridge magnetic resistance sensor in the outfield perpendicular to the response diagram under the component effect of sensitive direction.
Figure 13 is the output map of recommending the full-bridge magnetic resistance sensor.
Figure 14 is through first design sketch that permanent magnet produces magnetic bias is set.
Figure 15 is through second design sketch that permanent magnet produces magnetic bias is set.
Figure 16 adopts to recommend full-bridge and with reference to the layout concept map of the monolithic twin shaft bridge-type magnetic field sensor of full-bridge design.
Embodiment
The MTJ general introduction:
Fig. 1 is the concept of function sketch of a MTJ multilayer film element.MTJ element 1 generally comprise the upper strata ferromagnetic layer and inverse ferric magnetosphere 10 (Synthetic Antiferromagnetic, SAF), and the tunnel barrier layer 12 between the ferromagnetic layer of lower floor and 11, two magnetosphere of SAF layer.In this structure, the ferromagnetic layer on upper strata and SAF layer 10 have been formed the magnetic free layer, and its DOM changes with the change of external magnetic field.The magnetosphere of lower floor and SAF layer 11 are fixing magnetospheres, because its DOM is to be pinned at a direction, under general condition can not change.Pinning layer is deposited iron magnetosphere or SAF layer above or below antiferromagnetic layer 13 normally.Mtj structure normally is deposited on the top of the Seed Layer 14 of conduction, and the top of mtj structure is an electrode layer 15 simultaneously.The Seed Layer 14 of MTJ and the measured resistance value 16 between the protective seam 15 are to represent the relative DOM of free layer 10 and pinning layer 11.When the DOM of the ferromagnetic layer on upper strata and SAF layer 10 was parallel with the DOM of the ferromagnetic layer 11 of lower floor, the resistance 16 of whole element was at low resistance state.When the DOM antiparallel of the magnetosphere 12 of the DOM of the ferromagnetic layer 10 on upper strata and lower floor, the resistance 16 of whole element is at high-impedance state.Through known technology, the resistance of MTJ element 1 can be along with externally-applied magnetic field linear variation between high-impedance state and low resistance state.
Fig. 2 is applicable to the GMR of linear magnetic field measurement or the curve of output synoptic diagram of MTJ magnetoresistive element.Curve of output is saturated when the resistance of low resistance state 21 and high-impedance state 22, R
LAnd R
HRepresent the resistance of low resistance state and high-impedance state respectively.In resistance is R
LThe time, pinning layer parallel with the free layer DOM (28); In resistance is R
HThe time, pinning layer and free layer DOM antiparallel (29).Before reaching capacity, curve of output is to be linearly dependent on externally-applied magnetic field H.Curve of output usually not with the point symmetry of H=0.H
o(25) be saturation field 26, the typical offset between 27, R
LThe zone of saturation more near the point of H=0.H
o(25) value is commonly called " orange skin effect (Orange Peel) " or " Nai Er be coupled (Neel Coupling) "; Its representative value is usually between 1 to 25 Oe; Relevant with the structure and the flatness of ferromagnetic thin film in GMR or the MTJ element, depend on material and manufacturing process.In unsaturated zone, the curve of output equation can be approximated to be:
As shown in Figure 3, MTJ element 1 series connection equivalence each other is that a MTJ magneto-resistor is to form Wheatstone bridge.The MTJ magneto-resistor that is together in series can reduce noise, improves the stability of sensor.In the MTJ string, the bias voltage of each MTJ element reduces with the increase of magnetic tunnel-junction quantity.The reduction of electric current need produce a big voltage output, thereby has reduced shot noise, has strengthened the ESD stability of sensor, and each sensor is to be used to reduce voltage.In addition, along with the noise that increases MTJ string of magnetic tunnel-junction quantity correspondingly reduces, this be because each independently the mutual incoherent random behavior of MTJ element 1 on average fallen.
Existing two kinds of dissimilar full-bridge sensors compensation Nai Er couplings, sensitive direction is parallel and perpendicular to pinning layer DOM 11.These two kinds of Sensor Design are called respectively with reference to bridge type magnetic sensor and push-pull bridge sensor.The present invention at first sets forth the realization with reference to bridge type magnetic sensor and push-pull bridge sensor, next can set forth the implementation method with two kinds of sensors integrated twin shaft sensor on one chip.
Fig. 4 is the schematic diagram with reference to bridge type magnetic sensor.The curve of output of two kinds of sensing elements has one to depend on externally-applied magnetic field strongly, and corresponding with it element 40,41 is called as sensing arm.A little less than depend on two other corresponding element 42,43 of curve of output of externally-applied magnetic field, be called as reference arm.In addition, in the time of on substrate, sensor needs to link to each other with the solder joint of bias voltage Vbias (44) and ground wire GND (45), also will link to each other with the central point V1 (46) and the V2 (47) of two half-bridges simultaneously.The voltage of central point is:
The output voltage of bridge type magnetic sensor is:
In the ideal case;
; And when H
, bridge type magnetic sensor is output as:
When H satisfied following condition, output voltage was linear:
Suppose " < " expression is the size on " rank ":
(7)
Under actual conditions, the range of linearity is enough wide as a favorable linearity sensor.Magnetic Sensor for magneto-resistor; Satisfy Δ R/ R ≈ 150%,
130Oe
.The scope of the range of linearity of sensor is observed following equation:
(8)
Utilize these representative values; Device will not have the situation lower linear output services of calibrating, and big 2.5 times
of linear working range than expection is provided.
For making up with reference to bridge type magnetic sensor, the very important point is the sensitivity that reference arm is set.The sensitivity of magnetoresistive element is defined as the resistance function of resistance with the effect variation of externally-applied magnetic field:
The magnetic resistance that reduces reference arm and relevant with it sensing arm is unpractiaca, so the best mode of the sensitivity of change is change H
SThis can be that combination by following one or more diverse ways realizes:
Magnetic shielding---the high magnetic permeability ferromagnetic layer is deposited on the reference arm to weaken the effect of externally-applied magnetic field.
The shape anisotropy ability---because reference element and MTJ sensing element have different sizes therefore to have different shape anisotropy abilities.The most general way is to make the long axis length of the long axis length of reference element greater than the MTJ sensing element, and minor axis length is less than the minor axis length of sensing element, thus reference element be parallel to the demagnetization effects of sensitive direction will be much larger than sensing element.
Exchange biased---this technology is to create one effectively perpendicular to the outfield of sensitive direction through the exchange coupling of MTJ element free layer and adjacent inverse ferric magnetosphere or magnetic layer.Can reduce exchange biased intensity at the separation layer that free layer and exchange biased interlayer are provided with Cu or Ta.The multi-layer film structure division is following:
A. Seed Layer/inverse ferric magnetosphere 1/ ferromagnetic layer/Ru/ ferromagnetic layer/insulation course/ferromagnetic layer/separation layer/inverse ferric magnetosphere 2/ protective seam..
B. Seed Layer/inverse ferric magnetosphere 1/ ferromagnetic layer Ru/ ferromagnetic layer/insulation course/ferromagnetic layer/separation layer/magnetic layer/protective seam..
C. Seed Layer/inverse ferric magnetosphere 1/ ferromagnetic layer/Ru/ ferromagnetic layer/insulation course/ferromagnetic layer/inverse ferric magnetosphere 2/ protective seam..
D. Seed Layer/inverse ferric magnetosphere 1/ ferromagnetic layer/Ru/ ferromagnetic layer/insulation course/ferromagnetic layer/magnetic layer/protective seam..
Wherein, inverse ferric magnetosphere 1 (AF1) and inverse ferric magnetosphere 2 (AF2) are antiferromagnets, like PtMn, IrMn, FeMn.Ferromagnetic layer (FM) adopts some representative ferromagnetic thin film or multilayer films that are made up of ferrimag, includes but not limited to NiFe, CoFeB, CoFe and NiFeCo.Insulation course possibly be any insulating material that can spin polarization, like aluminium oxide or magnesium oxide.Separation layer is the film of Ta, Ru or these nonferromagnetic materials of Cu normally.The antiferromagnetic obstruct temperature (Blocking Temperature) of inverse ferric magnetosphere AF1 will be lower than AF2's, makes bias-field and the bias-field orthogonal vertical of free layer of the pinning layer of ferromagnetic layer/Ru/ ferromagnetic layer structure.
The end of a performance biasing---in this technology, permanent-magnet alloys such as Fe, Co, Cr and Pt are deposited on sensing element surface or the magnetic tunnel-junction, are used to provide the curve of output of magnetic field with biasing MTJ element that loose.An advantage of permanent magnet bias is to constitute big magnetic field initialization permanent magnet of later use at electric bridge.The very important advantage of another one is that bias-field can be eliminated the output of the magnetic domain of MTJ element with stable and linearization MTJ element.The great advantages of this design is that it has very big dirigibility in the design adjustment.Be the multi-layer film structure that can realize below:
Seed Layer/inverse ferric magnetosphere 1/ ferromagnetic layer/Ru/ ferromagnetic layer/insulation course/inverse ferric magnetosphere/thick separation layer/magnetic layer/protective seam..
Other technologies relate in the MTJ elements on either side lift magnet are set.
More than the technology of adjustment sensitivity can be used separately or several kinds of technology are combined use.When several kinds of technology that these are available combine and can make
High, thereby minimizing bridge type magnetic sensor reference arm
S MTJ, a highly stable reference arm is provided.
When using the intersection bias-field that the sensitivity of MTJ element is set, relation below intersection bias-field Hcross and Hs exist:
Wherein Ks is the shape anisotropy ability of free layer, and Ms is the saturation magnetization of free layer.Therefore, the inversely proportional relation of sensitivity and Hcross:
Provide the prefered method of Hcross as shown in Figure 5.Here, with reference in the close gap of magneto-resistor 50 between two wide magnet 51.This disposing way can produce a strong bias-field 52, makes reference arm to the externally-applied magnetic field relative insensitivity.In the gap, wide ground of MTJ sensing element 53 between a narrow relatively permanent magnet 54, this will produce a weak bias-field 55.Weak bias-field 55 has caused the high sensitivity of MTJ sensing element, and MTJ reference element and MTJ sensing element are arranged in the Wheatstone bridge with the mode that is similar among Fig. 4.Permanent magnet initialization magnetizing direction is 56, and the DOM of pinning layer is 57, perpendicular to the permanent magnet magnetization direction.
Express-analysis to reference to bridge type magnetic sensor shows, sensor is to higher along the sensitivity of the impressed field that is parallel to MTJ element pinning layer DOM 57, its mechanism such as Fig. 6 and shown in Figure 7.
As shown in Figure 6, MTJ sensing element 60 places first externally-applied magnetic field 61 that is parallel to pinning layer DOM 57.Because first externally-applied magnetic field 61 has a component perpendicular to the free layer DOM; Free layer DOM 64 rotates to first externally-applied magnetic field 61, so the resistance of MTJ sensing element 60 changes along with the change of the angle of the DOM 57 of its free layer DOM and pinning layer.
As shown in Figure 7, when second externally-applied magnetic field 65 is parallel to the long axis direction 66 of MTJ element 67, there is not moment of torsion with long axis direction 66 identical free layer DOM 68, because second externally-applied magnetic field 65 does not have vertical component along free layer DOM 68.Therefore the resistance of sensing element 67 can not change along with the direction that is parallel to X axle 66 and perpendicular to the change in the outfield of the DOM 57 of pinning layer.Therefore this outer field sensitive that only edge is parallel to pinning layer DOM 57 with reference to the design of bridge type magnetic sensor.If adopt permanent magnet 69 to setover, its DOM is mainly along 56 direction, and is parallel with the DOM 62 of pinning layer.
Fig. 8 is the standard curve of output 70 with reference to bridge type magnetic sensor.Outfield H
YThe 71st, along the DOM of pinning layer, its curve of output is to positive clinographic curve, through minimum negative value 73 and the highest on the occasion of 72 peak from negative.The curve of output 70 in outfield 71 between 72 and 73 on a large scale in be linear.
The push-pull bridge sensor:
The push-pull bridge sensor can be by the combination of following mode or following mode biasing free layer DOM:
The shape anisotropy ability---utilize the anisotropy energy of MTJ element that magnetic free layer DOM is setovered, the major axis of MTJ element is an easy magnetizing axis, through the axial ratio that element is set its shape anisotropic can be set;
The permanent magnet biasing---at the MTJ component ambient permanent magnet is set this free love layer DOM is setovered;
Electric current line biasing---on MTJ element upper strata or lower floor's plated metal lead produce magnetic field, thereby realize biasing to magnetic free layer DOM;
The Nai Er coupling---utilize the Nai Er coupled field between pinned magnetic layer and magnetic free layer that magnetic free layer DOM is setovered;
Exchange biased---this technology is to create one effectively perpendicular to the outfield of sensitive direction through the exchange-coupling interaction of MTJ element free layer and adjacent weak inverse ferric magnetosphere.Can reduce exchange biased intensity at the separation layer that free layer and exchange biased interlayer are provided with Cu or Ta.
Concrete grammar can be referring to patent: one chip bridge type magnetic sensor (application number: 201120097042.3).
Fig. 9 is push-pull bridge principle of sensors figure.As shown in the figure; The free layer DOM relative tilt of two sensor element R12 (80), R21 (81) and two other sensing element R11 (82), R22 (83); The resistance of two other sensing resistor R22 and R21 correspondingly reduced when the outfield will cause the increase of two sensing resistor R12 and R21 resistance like this, and this makes electric bridge output double.R21 and R12 resistance correspondingly reduced when the direction of change externally-applied magnetic field can make R22 and the increase of R11 resistance.Its response remains one times, but change has taken place the polarity of output.---a pair of resistance increases another resistance is reduced---can increase the response of bridge circuit like this to use the multiple measurement outfield of two pairs of sensors that opposite response is arranged, and therefore is called as " push-pull type " bridge circuit.
The voltage of its central point is:
And
The output of bridge type magnetic sensor is defined as:
In the push-pull type bridge circuit, the response of different MTJ elements is:
(16)
And
In order to describe the principal character of push-pull bridge sensor, two kinds of embodiment of the structure of the MTJ element permanent magnet biasing of employing rotary setting will come into question.And be not integrated into the twin shaft sensor comparatively speaking more easily with the sensor construction of bias-field.
Figure 10 has provided a kind of simplification concept map of this design.As shown in the figure; Magnetic direction between the strip permanent magnet 90 is parallel with the DOM of pinning layer 91; Therefore offer MTJ element 92 and 93 1 bias-field, thereby cause the free layer DOM of MTJ element 92 and 93 that a component along the DOM 91 of pinning layer is all arranged.Except using the bias-field magnetization, MTJ element 92 is along+45 ° approximately of pinning layer DOM 91 rotations, and MTJ element 93 is along-45 ° approximately of pinning layer DOM 91 rotations.
Figure 11 and Figure 12 are push-pull bridge sensor working principle schematic.
Shown in figure 11, when first externally-applied magnetic field 61 was parallel to the DOM 57 of pinning layer, the DOM 101 and 102 of sensing element 92 and 93 free layer all centered on the parallel or antiparallel direction rotation of pinning layer DOM, but variable quantity is identical.Response causes sensing element 92 identical with 93 change in resistance amount, and this is that a kind of common pattern and the output of bridge type magnetic sensor do not change.Therefore, bridge type magnetic sensor is insensitive to the outer field component that is parallel or anti-parallel to pinning layer DOM direction 57.
Yet shown in figure 12, when the DOM 57 of second externally-applied magnetic field 65 perpendicular to pinning layer, sensing element 92 and 93 resistance can corresponding changing.In this case, thus the DOM of free layer 104 and 105 can be thereupon rotation cause its magnetization component to be parallel to second externally-applied magnetic field 65.This DOM of free layer DOM free layer of element 92 away from the DOM 57 of pinning layer that can cause element 93 is near the DOM 57 of pinning layer.Therefore, the resistance of sensing element 93 can increase thereupon, and the resistance of sensing element 92 can reduce thereupon, and the variation of resistance no longer is common pattern, and the output meeting of bridge circuit increases thereupon.Second externally-applied magnetic field 65 changes into that resistance that vertical direction can cause element 93 reduces and the resistance of element 92 increases, thereby changes the polarity of electric bridge output.
The sensitivity of push-pull bridge sensor output is with parallel or adjust perpendicular to the pinning layer DOM, and this depends on the factor
β≈, free layer magnetization scope reduces with the relative rotation of pinning layer DOM, thereby causes the reduction of maximum output voltage.
This is the sensitivity equation of reference bridge type magnetic sensor integrated on same substrate.
Figure 13 is the typical curve of output of push-pull bridge sensor.Curve of output is at the DOM outfield H perpendicular to pinning layer
X(111) clinographic curve in the scope is through negative value 112 with on the occasion of 113 peak value.Between 112 and 113, curve of output 110 is linear with outfield 71 on a large scale, and its curve of output is with identical with reference to bridge.Therefore the use of monolithic twin shaft bridge Magnetic Sensor is feasible by the reference electric bridge of GMR or MTJ sensing element with the combination of recommending electric bridge.Do not use the twin shaft design of bias-field very simple because for reference to electric bridge with recommend electric bridge, the pinning direction is common, so the following situation of having used permanent magnet bias of describing emphatically.
Monolithic twin shaft Design of Sensor:
The field of formation permanent magnet can be considered to form at the edge of permanent magnet owing to virtual magnetic charge, and like Figure 14 and Figure 15, this is that magnetized edge effect produces.Magnetic charge is along with the size and Orientation of remanent magnetism Mr changes, and the size and Orientation of remanent magnetism is relevant with the sensing at permanent magnet edge simultaneously.
Or
These virtual magnetic charges have produced a magnetic field:
The direction in magnetic field is the determining positions by magnetic charge between the permanent magnet 120 and 122, rather than the direction of permanent magnet, and the size of bias-field 121 and 123 is by permanent magnet 120 and the decision of 122 DOM.This method makes that making up permanent magnet bias twin shaft magnetic field sensor becomes possibility.
Figure 16 is the layout concept map of permanent magnet biasing twin shaft magnetic field bridge type magnetic sensor.Push-pull bridge sensor 130 and can be arranged side by side on same substrate with reference to bridge type magnetic sensor 131, and adopt identical prepared.In this design, be 90 ° of arrangements with reference to the biasing permanent magnet 133 of bridge type magnetic sensor 130 and the biasing permanent magnet 132 of push-pull bridge sensor 131.So; If permanent magnet magnetization direction and pinning layer DOM are 45 °; Push-pull bridge sensor 130 and can obtain suitable permanent magnet bias then with reference to 131 two bridge type magnetic sensors of bridge type magnetic sensor; Wherein, push-pull bridge sensor 130 and with reference to bridge type magnetic sensor 131 respectively responsive outfield 134 along the component of X axle and Y direction.
The present invention adopts above structure, can realize low cost integrated making on same semiconductor chip on a large scale.
More than combine diagram to be illustrated to specific embodiment of the present invention, clearly, on the basis of not leaving scope of the present invention and spirit, can much revise prior art and technology.In the technical field, the common knowledge of a GPRS just can be carried out diversified change in technological main idea scope of the present invention under of the present invention.
Claims (11)
1. monolithic twin shaft bridge-type magnetic field sensor; It is characterized in that: it comprises one along " Y " direction of principal axis responsive a reference bridge type magnetic sensor and a push-pull bridge sensor along " X " direction of principal axis sensitivity; Saidly comprise reference element and sensing element with reference to bridge type magnetic sensor; Said push-pull bridge sensor comprises sensing element, wherein " X " axle and " Y " quadrature spool mutually.
2. monolithic twin shaft bridge-type magnetic field sensor according to claim 1 is characterized in that: said is that said push-pull bridge sensor is for recommending full-bridge sensors with reference to full-bridge sensors with reference to bridge type magnetic sensor.
3. monolithic twin shaft bridge-type magnetic field sensor according to claim 2 is characterized in that: it comprises that also the permanent magnet that is used to setover is to be provided with said reference element and poor sensitivity between the sensing element and said free layer DOM of recommending the sensing element of full-bridge sensors with reference to full-bridge sensors.
4. monolithic twin shaft bridge-type magnetic field sensor according to claim 2; It is characterized in that: the said shape that has magnetic anisotropy with reference to the reference element and the sensing element of full-bridge sensors is to be provided with the poor sensitivity between them, and said sensing element of recommending full-bridge sensors has the shape of magnetic anisotropy so that its free layer DOM to be set.
5. monolithic twin shaft bridge-type magnetic field sensor according to claim 2; It is characterized in that: it also comprises the permanent magnet that is used to setover; The shape that said reference element and sensing element and said sensing element of recommending full-bridge sensors with reference to full-bridge sensors has magnetic anisotropy, the magnetic anisotropy of the magnetic bias field that permanent magnet produces and the shape of magnetic anisotropy can combination so that said reference element and poor sensitivity between the sensing element and said free layer DOM of recommending the sensing element of full-bridge sensors with reference to full-bridge sensors to be set.
6. monolithic twin shaft bridge-type magnetic field sensor according to claim 1 is characterized in that: said is that said push-pull bridge sensor is for recommending the half-bridge sensor with reference to the half-bridge sensor with reference to bridge type magnetic sensor.
7. monolithic twin shaft bridge-type magnetic field sensor according to claim 6 is characterized in that: it comprises that also the permanent magnet that is used to setover is to be provided with said reference element and poor sensitivity between the sensing element and said free layer DOM of recommending the sensing element of half-bridge sensor with reference to the half-bridge sensor.
8. monolithic twin shaft bridge-type magnetic field sensor according to claim 6; It is characterized in that: the said shape that has magnetic anisotropy with reference to the reference element and the sensing element of half-bridge sensor is to be provided with the poor sensitivity between them, and said sensing element of recommending the half-bridge sensor has the shape of magnetic anisotropy so that its free layer DOM to be set.
9. monolithic twin shaft bridge-type magnetic field sensor according to claim 6; It is characterized in that: it also comprises the permanent magnet that is used to setover; The shape that said reference element and sensing element and said sensing element of recommending the half-bridge sensor with reference to half-bridge has magnetic anisotropy, the magnetic anisotropy of the magnetic bias field that permanent magnet produces and the shape of magnetic anisotropy can combination so that said reference element and poor sensitivity between the sensing element and said free layer DOM of recommending the sensing element of half-bridge sensor with reference to the half-bridge sensor to be set.
10. monolithic twin shaft bridge-type magnetic field sensor according to claim 1; It is characterized in that: said with reference to bridge type magnetic sensor comprise one be used to envelope reference element screen layer to reduce the sensitivity of reference element, said screen layer is the ferromagnetic material of high magnetic permeability.
11. monolithic twin shaft bridge-type magnetic field sensor according to claim 1 is characterized in that: said sensing element periphery with reference to bridge type magnetic sensor is provided with the ferromagnetic material of high magnetic permeability to increase the sensitivity of sensing element.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110315913.9A CN102435963B (en) | 2011-04-06 | 2011-10-18 | Monolithic dual-axis bridge-type magnetic field sensor |
| PCT/CN2012/075956 WO2012136158A2 (en) | 2011-04-06 | 2012-05-23 | Single-chip two-axis bridge-type magnetic field sensor |
| US14/110,106 US9575143B2 (en) | 2011-04-06 | 2012-05-23 | Single-chip two-axis magnetic field sensor |
| EP12767837.3A EP2696210B1 (en) | 2011-04-06 | 2012-05-23 | Single-chip two-axis bridge-type magnetic field sensor |
| JP2014502982A JP6193212B2 (en) | 2011-04-06 | 2012-05-23 | Single chip 2-axis bridge type magnetic field sensor |
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| CN201120097038.7 | 2011-04-06 | ||
| CN201110084594.5A CN102226835A (en) | 2011-04-06 | 2011-04-06 | Single-chip double-axis magnetic field sensor and preparation method thereof |
| CN201110084594.5 | 2011-04-06 | ||
| CN201120097038 | 2011-04-06 | ||
| CN201110315913.9A CN102435963B (en) | 2011-04-06 | 2011-10-18 | Monolithic dual-axis bridge-type magnetic field sensor |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012136158A3 (en) * | 2011-04-06 | 2012-11-29 | 江苏多维科技有限公司 | Single-chip two-axis bridge-type magnetic field sensor |
| CN103412269A (en) * | 2013-07-30 | 2013-11-27 | 江苏多维科技有限公司 | Single-chip push-pull bridge type magnetic field sensor |
| CN103454599A (en) * | 2012-05-31 | 2013-12-18 | 罗伯特·博世有限公司 | Magnetic field sensor |
| CN108387852A (en) * | 2018-04-23 | 2018-08-10 | 北京航空航天大学青岛研究院 | Single, double axis magnetic field sensor and preparation method thereof |
| CN110320482A (en) * | 2019-07-23 | 2019-10-11 | 珠海多创科技有限公司 | A kind of TMR full-bridge Magnetic Sensor and preparation method thereof |
| WO2020232735A1 (en) * | 2019-05-23 | 2020-11-26 | 歌尔微电子有限公司 | Magnetic sensor module |
| CN113848517A (en) * | 2020-06-25 | 2021-12-28 | 西部数据技术公司 | Magnetic sensor bridge using dual free layers |
| CN115267623A (en) * | 2022-09-23 | 2022-11-01 | 微传智能科技（常州）有限公司 | Magnetic resistance magnetic switch sensor |
| CN117295387A (en) * | 2023-11-24 | 2023-12-26 | 江苏多维科技有限公司 | Preparation method of bridge type magnetic resistance sensor |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102435963B (en) * | 2011-04-06 | 2014-06-04 | 江苏多维科技有限公司 | Monolithic dual-axis bridge-type magnetic field sensor |
| US10809320B2 (en) | 2015-04-29 | 2020-10-20 | Everspin Technologies, Inc. | Magnetic field sensor with increased SNR |
| CN111465868A (en) * | 2017-12-21 | 2020-07-28 | 罗伯特·博世有限公司 | Magnetoresistive magnetic field sensor bridge with compensation for cross-axis effects |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030206380A1 (en) * | 2001-02-08 | 2003-11-06 | Seigler Michael Allen | Biased CPP Sensor using spin-momentum transfer |
| CN1694277A (en) * | 2004-03-12 | 2005-11-09 | 雅马哈株式会社 | Method for manufacturing magnetic sensor, magnet array and method for manufacturing the magnet array |
| JP2006098320A (en) * | 2004-09-30 | 2006-04-13 | Matsushita Electric Ind Co Ltd | Magnetic type attitude sensing sensor and electronic equipment using the same |
| CN101308199A (en) * | 2002-11-29 | 2008-11-19 | 雅马哈株式会社 | Magnetic sensor and method for compensating magnetic sensor temperature correlated characteristic |
| CN101325210A (en) * | 2007-06-13 | 2008-12-17 | 株式会社理光 | Magnetic sensor and production method thereof |
| US20080309331A1 (en) * | 2007-06-15 | 2008-12-18 | Zhenghong Qian | Giant magnetoresistive resistor and sensor apparatus and method |
| US7642773B2 (en) * | 2006-02-23 | 2010-01-05 | Nec Corporation | Magnetic sensor, production method thereof, rotation detection device, and position detection device |
| CN202305777U (en) * | 2011-04-06 | 2012-07-04 | 江苏多维科技有限公司 | Monolithic biaxial bridge-type magnetic field sensor |
-
2011
- 2011-10-18 CN CN201110315913.9A patent/CN102435963B/en active Active
- 2011-10-18 CN CN 201120396342 patent/CN202305777U/en not_active Expired - Lifetime
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030206380A1 (en) * | 2001-02-08 | 2003-11-06 | Seigler Michael Allen | Biased CPP Sensor using spin-momentum transfer |
| CN101308199A (en) * | 2002-11-29 | 2008-11-19 | 雅马哈株式会社 | Magnetic sensor and method for compensating magnetic sensor temperature correlated characteristic |
| CN1694277A (en) * | 2004-03-12 | 2005-11-09 | 雅马哈株式会社 | Method for manufacturing magnetic sensor, magnet array and method for manufacturing the magnet array |
| JP2006098320A (en) * | 2004-09-30 | 2006-04-13 | Matsushita Electric Ind Co Ltd | Magnetic type attitude sensing sensor and electronic equipment using the same |
| US7642773B2 (en) * | 2006-02-23 | 2010-01-05 | Nec Corporation | Magnetic sensor, production method thereof, rotation detection device, and position detection device |
| CN101325210A (en) * | 2007-06-13 | 2008-12-17 | 株式会社理光 | Magnetic sensor and production method thereof |
| US20080309331A1 (en) * | 2007-06-15 | 2008-12-18 | Zhenghong Qian | Giant magnetoresistive resistor and sensor apparatus and method |
| CN202305777U (en) * | 2011-04-06 | 2012-07-04 | 江苏多维科技有限公司 | Monolithic biaxial bridge-type magnetic field sensor |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9575143B2 (en) | 2011-04-06 | 2017-02-21 | MultiDimension Technology Co., Ltd. | Single-chip two-axis magnetic field sensor |
| WO2012136158A3 (en) * | 2011-04-06 | 2012-11-29 | 江苏多维科技有限公司 | Single-chip two-axis bridge-type magnetic field sensor |
| CN103454599A (en) * | 2012-05-31 | 2013-12-18 | 罗伯特·博世有限公司 | Magnetic field sensor |
| CN103412269A (en) * | 2013-07-30 | 2013-11-27 | 江苏多维科技有限公司 | Single-chip push-pull bridge type magnetic field sensor |
| CN103412269B (en) * | 2013-07-30 | 2016-01-20 | 江苏多维科技有限公司 | Single-chip push-pull bridge type magnetic field sensor |
| CN108387852A (en) * | 2018-04-23 | 2018-08-10 | 北京航空航天大学青岛研究院 | Single, double axis magnetic field sensor and preparation method thereof |
| WO2020232735A1 (en) * | 2019-05-23 | 2020-11-26 | 歌尔微电子有限公司 | Magnetic sensor module |
| CN110320482A (en) * | 2019-07-23 | 2019-10-11 | 珠海多创科技有限公司 | A kind of TMR full-bridge Magnetic Sensor and preparation method thereof |
| CN113848517A (en) * | 2020-06-25 | 2021-12-28 | 西部数据技术公司 | Magnetic sensor bridge using dual free layers |
| CN115267623A (en) * | 2022-09-23 | 2022-11-01 | 微传智能科技（常州）有限公司 | Magnetic resistance magnetic switch sensor |
| CN115267623B (en) * | 2022-09-23 | 2023-10-20 | 微传智能科技（常州）有限公司 | Magneto-resistance magnetic switch sensor |
| CN117295387A (en) * | 2023-11-24 | 2023-12-26 | 江苏多维科技有限公司 | Preparation method of bridge type magnetic resistance sensor |
| CN117295387B (en) * | 2023-11-24 | 2024-01-23 | 江苏多维科技有限公司 | Preparation method of bridge type magnetic resistance sensor |
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|---|---|
| CN202305777U (en) | 2012-07-04 |
| CN102435963B (en) | 2014-06-04 |
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