CN103116143B - Integrated high-accuracy triaxial magnetic sensor - Google Patents
Integrated high-accuracy triaxial magnetic sensor Download PDFInfo
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- CN103116143B CN103116143B CN201310023615.1A CN201310023615A CN103116143B CN 103116143 B CN103116143 B CN 103116143B CN 201310023615 A CN201310023615 A CN 201310023615A CN 103116143 B CN103116143 B CN 103116143B
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Abstract
An integrated high-accuracy triaxial magnetic sensor comprises four magnetic measuring units, a signal-output and offset electrode, an inner plane accumulator, four magnetic orbital transfer accumulators, four pits and a basement. The inner plane accumulator adopts a symmetrical structure and is arranged in the middle of the basement, the four magnetic orbital transfer accumulators are arranged at four sides of the plane accumulator in a symmetrical mode, and each magnetic orbital transfer accumulator is arranged in a pit. Each magnetic measuring unit comprises a Wheatstone bridge formed by two giant magneto resistive (GMR) sensitive elements and two GMR reference elements. The integrated high-accuracy triaxial magnetic sensor has the advantages of being simple and compact, small in size, convenient to manufacture, low in manufacturing cost, and high in sensitivity and the like.
Description
Technical field
The present invention is mainly concerned with feeble signal field of sensing technologies, refers in particular to a kind of integral type high-accuracy triaxial magnetic sensor.
Background technology
Weak magnetic fields measurement is all widely used in fields such as earth-magnetic navigation, target detection, geologic prospecting, biomedicines.Magnetic sensor can measure three components in magnetic field simultaneously, calculate inclination angle and the position angle of sensor, in navigation, determine there is more wide application prospect than single shaft and double-shaft sensor in appearance location etc., high resolution, low-power consumption, miniaturization are the main development directions of magnetic sensor.
The magnetic sensor type that present stage is used for magnetic-field measurement is more, assembly type and integral type can be divided into by implementation, fluxgate sensor, Hall element, Lorentz force Magnetic Sensor, GMR (Giant Magnetoresistive, giant magnetoresistance) Magnetic Sensor etc. can be divided into by its principle of work.Wherein, GMR Magnetic Sensor is made based on microelectronic technique, have that resolving power is high, volume is little, the feature such as low in energy consumption, easy batch production, the magnetic sensor based on GMR effect is hopeful to realize integrated design, and has the feature of high resolution, miniaturization and low-power consumption.
The magnetic sensor of assembling mode is adopted to mainly contain a diaxon and a single shaft, these the two kinds combinations of three single shafts, mainly contain following several version: 1, assembly type magnetic sensor, its X, Y-axis adopt GMR single-axis sensors, Z axis adopts Hall element, and Hall element is convenient for measuring Z-direction magnetic field (patent No.: US20110234218A1); 2, integrated three independent Magnetic Sensors are to the three-axis measurement scheme (patent No.: US7271586) on a chip; 3, by three independently MI Magnetic Sensor fit together formation three axle (US7298140B2); 4, together with Hall element is assembled into search coil sensor, stationary magnetic field and alternating magnetic field can be measured simultaneously, resolving power is high, wherein measure stationary magnetic field and can reach 100pT, but owing to adopting three dimensional coils structure, volume is comparatively large, cannot realize the miniaturization of magnetic sensor and inconvenience batch production; 5, based on the magnetic field lines collector structure of GMR sensitive element, and Finite Element Simulation Analysis has been carried out to it, this structure can improve the sensitivity of GMR sensitive element, but three discrete annular collector techniques are difficult to realize, and the assembling that needs to put together forms magnetic sensor.Generally speaking, three axle orthogonalities of assembly type magnetic sensor depend on assembly precision, and the integral type magnetic sensor adopting MEMS technology to make has better orthogonality.
In the integral type magnetic sensor adopting MEMS technology, also many schemes are had to propose in prior art: the MR Magnetic Sensor 1, being made different pinning direction by certain technique on the same base, and the collector of soft magnetic material is made on the MR sensitive element side measuring Z-direction magnetic field, integration makes the magnetic sensor formed based on MR effect.2, the sensor in the Z-direction magnetic field measuring vertical plane is accomplished on inclined-plane, three-axis measurement (patent No.: US7564237, US7126330) is realized together with measuring the plane pick in X, Y-direction magnetic field, achieve integration to make, but the MR Magnetic Sensor manufacture difficulty on inclined-plane is relatively large, is difficult to ensure with the consistance of Magnetic Sensor in plane.3, inclined-plane MR sensitive element being produced on substrate is used for measure Z-direction magnetic field, make with the MR sensitive element integration in plane, form magnetic sensor (patent No.: US20120268113A1, US20090027048A1, US20090027048).4, another someone magnetic field three-axis sensor of adopting CMOS technology to realize based on Hall effect on a silicon chip, ensure that the orthogonality between three axles, without hysteresis effect, special magnetic material is not needed yet, can measure three-component, but resolving power is low, about 21 μ T simultaneously.5, adopt micro-processing technology in GaAs substrate, utilize thermal stress to make Hall element and the base plane less perpendicular of making, form three axle Hall elements, achieve miniaturization and the integrated design manufacture of magnetic sensor, technological process is relatively simple, but the angle of its Z-direction sensor and plane is difficult to accurate control, orthogonality between all three axles is difficult to ensure, and minimum detectable is at 2 μ about T.6, someone utilizes the interaction force of permanent magnet film and external magnetic field to change the principle of resistance sensing element of pressure output, adopt MEMS process technology on silicon chip, realize the integrated design of magnetic sensor, ensure that miniaturization and the integration of sensor, but the resolving power that can reach is limited, the measurement resolution in its Z-direction magnetic field is 250nT at present.7, the electrical conductor owing to being placed in magnetic field can be subject to the acting force of Lorentz force, by structural design, this acting force is produced displacement, cause capacitance variations, measure electric capacity and can obtain magnetic field magnitudes, adopt the Lorentz force magnetic sensor of MEMS technology, without hysteresis effect, special magnetic material is not needed yet, orthogonality, miniaturization, low-power consumption can be ensured, but the resolving power that the Magnetic Sensor of this principle can reach is not high, the measurement resolution of its Z component is about 70nT at present, and lower than the resolving power that plane inner field is measured.8, on twin shaft GMR Magnetic Sensor basis, utilize NiFe plate the magnetic-field component distortion of vertical plane to be measured to plane, form three axle MR sensors, usable surface micro-processing technology realizes, but the magnetic-field component after distortion is less, Z-direction magnetic-field measurement resolving power is lower.
Known by the above analysis to existing integrated magnetic sensor, in magnetic sensor integration makes, difficult point is to measure Z-direction magnetic field.The resolution that can reach based on the Magnetic Sensor of Hall magnet-sensitive element and Lorentz force resonance is not high, adopt GMR sensitive element can realize high resolving power and measure demand, but GMR sensitive element has a feature, can only measure exactly GMR sensitive element magnetic field planar.Address this problem and mainly contain two kinds of thinkings, the first is that Magnetic Sensor is produced on the inclined-plane of substrate, and the second uses planar magnetic sensor measurement after the Z-direction magnetic line of force of vertical plane being forwarded in plane with magnetic line of force steering structure.Measuring aspect, Z-direction magnetic field based on these two kinds of thinkings also has many schemes to propose at present.As: the collector 1, adding soft magnetic material in MR elements on either side, measure (patent No.: US7505233B2) in the plane that the magnetic line of force of vertical plane is partly rolled over; 2, placing soft magnetism block on MR sensitive element side, is also similar effect (patent No.: US20120200292A1); 3, in substrate, make pit or boss, then MTJ device is produced on inclined-plane, measure Z-direction magnetic field (patent No.: US20120068698) by the output signal of processing of circuit sensitive element; 4,111 are etched at 100 surface anisotropies of silicon, have the angle depending on silicon crystalline structure between 111 and 100, then on AMR magnet-sensitive element 111, due to AMR sensitive element and base plane in a certain angle, can measure Z-direction magnetic field, noise level is 20nT@1Hz; Meanwhile, be produced on the AMR magnet-sensitive element on inclined-plane and the sensitivity of AMR magnet-sensitive element to magnetic field in plane variant, adopt simple circuit to be difficult to solve Z-direction magnetic field magnitudes from the response of two magneto sensors.
Generally, integral type magnetic sensor has orthogonality better than assembly type, and micro-processing technology can be adopted to realize the miniaturization of sensor, but based on Hall element, AMR element, Lorentz force resonance magnet-sensitive element, overall resolving power is lower; Adopt GMR generally can reach higher sensitivity and resolution as sensitive element, but GMR to magnetic-field-sensitive planar, the magnetic field of vertical plane is very little on its impact.Near GMR sensitive element, place soft magnetism block the Z-direction magnetic line of force to be transferred in plane to a certain extent and measure, but above various laying method difficulty in specific implementation is comparatively large, and is difficult to the structural symmetry and the consistency of performance that ensure soft magnetism block; Z-direction magnetic field can directly be measured in inclined-plane GMR sensitive element being produced on sensor base, but its implementation also more complicated, and between each Magnetic Sensor on inclined-plane and and plane in Magnetic Sensor between consistance be also difficult to ensure.So the difficult point of technical development is how to measure Z-direction magnetic field with GMR sensitive element in prior art, the designing and producing of three-axis integrative formula Magnetic Sensor that this difficult point result in based on GMR sensitive element is difficult to realize.
Summary of the invention
The technical problem to be solved in the present invention is just: the technical matters existed for prior art, the invention provides a kind of simple and compact for structure, volume is little, easily manufactured, cost of manufacture is cheap, highly sensitive integral type high-accuracy triaxial magnetic sensor.
For solving the problems of the technologies described above, the present invention by the following technical solutions:
A kind of integral type high-accuracy triaxial magnetic sensor, comprise four magnetic measurement unit, signal exports and bias electrode, collector, four magnetic variation rail collectors, four pits and substrates in plane, described plane collector adopts self symmetrical structure and is positioned at the middle position of substrate, described four magnetic variation rail collectors are symmetrically shape distribution at the four sides of plane collector, and each described magnetic variation rail collector is all arranged in a pit; Each magnetic measurement unit includes the Wheatstone bridge formed with two GMR sensitive elements and two GMR reference elements.
As a further improvement on the present invention:
Air gap between described plane collector and magnetic variation rail collector is wider than GMR sensitive element, and described GMR sensitive element is positioned over described air gap place, and described two GMR reference elements lay respectively at below the magnetic variation rail collector of described air gap both sides.
Described magnetic variation rail collector comprises collector at the bottom of the hole being positioned at pit bottom, the inclined-plane collector be positioned on pit inclined-plane, be positioned at the edge collector at pit edge, and at the bottom of described hole, collector, inclined-plane collector, edge collector connect as a whole successively.
Described GMR reference element, GMR sensitive element all adopt spin valve structure or multi-layer film structure.
Described substrate adopts intrinsic silicon, four symmetrical pits are etched at (100) plane corrosive liquid of intrinsic silicon after photoetching, the inclined-plane of described pit is (111) plane of intrinsic silicon, is 54.74 ° with the angle of (100) plane.
Surface deposition one layer insulating of described substrate.
Compared with prior art, the invention has the advantages that: integral type high-accuracy triaxial magnetic sensor of the present invention, based on MEMS technology, have employed vertical magnetic field complanation measuring technique, whole magnetic sensor be highly sensitive, volume is little, low in energy consumption, GMR unit consistance is good, three between centers have good orthogonality, and sensor one-piece construction is simple, easily manufactured, effectively can reduce the cost of manufacture of sensor.
Accompanying drawing explanation
Fig. 1 is plan structure schematic diagram of the present invention.
Fig. 2 is the structural representation of magnetic measurement unit in the present invention.
Fig. 3 is the structural representation of collector in the present invention.
Fig. 4 is the schematic diagram of substrate and lead-in wire in the present invention.
Fig. 5 is the schematic cross-section of magnetic variation rail collector in the present invention.
Marginal data:
1, magnetic measurement unit; 2, plane collector; 3, magnetic variation rail collector; 4, pit; 7, GMR reference element; 8, GMR sensitive element; 901, edge collector; 902, inclined-plane collector; 903, end collector is cheated; 10, substrate; 101, the first magnetic measurement unit; 102, the second magnetic measurement unit; 103, the 3rd magnetic measurement unit; 104, the 4th magnetic measurement unit; 301, the first magnetic variation rail collector; 302, the second magnetic variation rail collector; 303, the 3rd magnetic variation rail collector; 304, the 4th magnetic variation rail collector; 401, the first pit; 402, the second pit; 403, the 3rd pit; 404, the 4th pit; 701, the first reference element; 702, the second reference element; 801, the first sensitive element; 802, the second sensitive element; 1101,1102,1103,1104, four groups of electrodes.
Embodiment
Below with reference to Figure of description and specific embodiment, the present invention is described in further details.
As shown in Figure 1, integral type high-accuracy triaxial magnetic sensor of the present invention, comprise four magnetic measurement unit 1, signal exports and bias electrode, plane collector 2, four magnetic variation rail collectors 3, four pits 4, substrate 10 and four groups of electrodes, plane collector 2 adopts self symmetrical structure, and be positioned at the middle position of substrate 10, four magnetic variation rail collector 3 symmetrically shape distributions at the four sides of plane collector 2, the common composition magnetic line of force becomes rail and assembles the effect of amplifying, and each magnetic variation rail collector 3 is all arranged in a pit 4.Four magnetic measurement unit 1 are respectively the first magnetic measurement unit 101, second magnetic measurement unit 102, the 3rd magnetic measurement unit 103, the 4th magnetic measurement unit 104; Four magnetic variation rail collectors 3 are respectively the first magnetic variation rail collector 301, second magnetic variation rail collector the 302, the 3rd magnetic variation rail collector the 303, the 4th magnetic variation rail collector 304; Four pits 4 are respectively the first pit 401, second pit 402, the 3rd pit 403, the 4th pit 404.Four groups of electrodes are respectively: 1101,1102,1103,1104.
As shown in Figure 2 and Figure 5, each magnetic measurement unit 1 includes the Wheatstone bridge formed with two GMR sensitive elements 8 and two GMR reference elements 7, as the first reference element 701, second reference element 702 in the first sensitive element 801, second sensitive element 802, GMR reference element 7 of GMR sensitive element 8 in figure.Wherein, GMR reference element 7, GMR sensitive element 8, all in fine strip shape, can adopt spin valve structure in instantiation, also can adopt multi-layer film structure.GMR sensitive element 8 is between plane collector 2 and the air gap of magnetic variation rail collector 3, and when the changes of magnetic field of GMR sensitive element 8 sensitive direction, the resistance value of GMR sensitive element 8 also respective change can occur.Two GMR reference elements 7 lay respectively at below the magnetic variation rail collector 3 of air gap both sides, magnetic variation rail collector 3 is while the gathering magnetic line of force, magnetic screening action can be played to GMR reference element 7 present position, when external magnetic field changes, GMR reference element 7 can not be subject to magnetic fields, and its resistance value also can not change.The resistance value of the first sensitive element 801, second sensitive element 802 of GMR sensitive element 8 changes with the change of external magnetic field, then the output signal V of Wheatstone bridge
s1and V
s2difference reflect the size in tested magnetic field, so available magnetic measurement unit 1 measures the magnetic field value of its sensitive direction.
As shown in Figure 3, in the present embodiment, collector is made up of plane collector 2 and magnetic variation rail collector 3.Collector adopts high magnetic permeability soft magnetic material (as NiFe, CoZrNb etc.) soft magnetic film made at substrate 10 surface sputtering, and its shape is not limited to shown in figure, can be rectangle or trapezoidal etc., as long as meet symmetry requirement.Collector can produce congregation to the magnetic line of force, increases the magnetic field value of GMR sensitive element 8 position.Midplane collector 2 of the present invention is positioned at center, magnetic variation rail collector 3 is positioned at surrounding, is symmetric.Air gap between plane collector 2 and magnetic variation rail collector 3 is slightly wider than GMR sensitive element, is used for placing measurement GMR sensitive element 8.Magnetic variation rail collector 3 is made up of three parts being positioned at diverse location, hole end collector 903 is positioned at the bottom of pit 4, inclined-plane collector 902 is positioned on the inclined-plane of pit 4, edge collector 901 is positioned at the edge of pit 4, three moiety aggregation devices connect as a whole successively, and the vertical height of magnetic variation rail collector 3 is the degree of depth of pit 4.Plane collector 2 has the effect of two aspects with magnetic variation rail collector 3: the magnetic-field component of vertical Magnetic Sensor plane can be assembled and be torqued in Magnetic Sensor plane on the one hand, then can measure with magnetic measurement unit 1, the complanation namely realizing vertical magnetic field is measured; The magnetic-field component of magnetic measurement unit 1 sensitive direction can be assembled on the other hand and amplify, then measure with magnetic measurement unit 1, the sensitivity of magnetic measurement unit 1 can be improved.Visible, the measurement result of magnetic measurement unit 1 comprises two parts, and a part is the magnetic-field component perpendicular to sensor plane, and another part is the magnetic-field component in plane.
As shown in Figure 4, be substrate in instantiation of the present invention 10 and the schematic diagram of lead-in wire.Wherein, substrate 10 adopts intrinsic silicon, four symmetrical pits 4 are etched at (100) plane corrosive liquid of intrinsic silicon after photoetching, the inclined-plane of pit 4 is (111) plane of intrinsic silicon, it is 54.74 ° with the angle of (100) plane, the angle determined can ensure the symmetry of pit 4 structure, also ensure that each magnetic variation rail structure has consistent action effect for magnetic field.Then, adopt gas-phase chemical reaction at surface deposition one layer insulating of substrate 10, as Si
3n
4, to improve the insulating property of substrate 10.The profile of pit 4 is not limited to the rectangle shown in Fig. 4, namely meets the demands as long as can form centrosymmetric inclined-plane; The corrosion depth of pit 4 is determined according to required vertical direction magnetic field conversion efficiency.Shape and the particular location of the four groups of electrodes 1101,1102,1103,1104 in plane are neither limit shown in Fig. 4, export require as long as meet the voltage bias of field sensing component and signal.All electrode pairs adopts the technique first sputtering (or vacuum evaporation, plating etc.) conductive film layer (aluminium or gold etc.) photoetching corrosion again to prepare shaping on the substrate 10.
As shown in Figure 5, be the partial cutaway schematic view of a magnetic variation rail collector 3 and substrate 10 in this example.GMR sensitive element 8, between plane collector 2 and magnetic variation rail collector 3, measures the magnetic field value of its sensitive direction.First reference element 701, first reference element 702 of GMR reference element 7 lays respectively at below the magnetic variation rail collector 3 of air gap both sides, is subject to the shielding action of magnetic variation rail collector 3, thus its resistance value not with external magnetic field change, namely to magnetic field without response; But temperature variation can produce identical effect to the resistance value of all GMR sensitive elements 8, so the adverse effect of magnetic measurement unit 1 pair of temperature of the wheatstone bridge form of GMR sensitive element 8 and GMR reference element 7 composition has certain inhibiting effect.
In specific operation process, if the sensitivity of GMR element is
namely when a GMR element sensitive direction changes of magnetic field unit, the resistance change Δ R of GMR element.Get the right-handed coordinate system in Fig. 1, z is outside to vertical paper, the first magnetic measurement unit 101 in magnetic measurement unit 1 and the sensitive direction of the 3rd magnetic measurement unit 103 are x direction, and the second magnetic measurement unit 102 in magnetic measurement unit 1 and the sensitive direction of the 4th magnetic measurement unit 104 are y direction.When there being magnetic fields in magnetic sensor, if its component along diagram coordinate system three directions is respectively n
x, n
y, n
zunit, magnetic collector structural symmetry, can think that the magnetic field of collector to x direction and y direction has identical enlargement factor is N
1, collector is set to N to z to the enlargement factor in magnetic field
2, because collector is different with the magnetic line of force aggregation paths perpendicular to flat magnetic field to plane inner field, so General N
1≠ N
2.
In magnetic measurement unit 1, the magnetic-field component in the first magnetic measurement unit 101 and the 3rd magnetic measurement unit 103 pairs of y directions is insensitive, be torqued into x negative direction under the effect of the first magnetic variation rail collector 301 in magnetic variation rail collector 3 of magnetic-field component in the z-direction, in magnetic variation rail collector 3 the 3rd magnetic variation rail collector 303 effect under be torqued into the square of x.So under the effect in above-mentioned magnetic field, in magnetic measurement unit 1, residing for the first magnetic measurement unit 101, the magnetic field value of air gap is N
1n
x-N
2n
zunit, in magnetic measurement unit 1, residing for the 3rd magnetic measurement unit 103, the magnetic field value of air gap is N
1n
x+ N
2n
zunit.In magnetic measurement unit 1, the resistance variations of the GMR sensitive element 8 of the first magnetic measurement unit 101 is (N
1n
x-N
2n
z) Δ R, make R
x=N
1n
xΔ R, R
y=N
1n
yΔ R, R
z=N
2n
zΔ R, if the Wheatstone bridge bias voltage of each magnetic measurement unit 1 is V
c, then in signal lead, 1102 place's current potentials are
in signal lead, the current potential at 1103 places is
the differential voltage value that in magnetic measurement unit 1, first magnetic measurement unit 101 exports, the differential voltage value that namely right side magnetic measurement unit 1 exports is:
Can obtain the differential voltage value that in magnetic measurement unit 1, the 3rd magnetic measurement unit 103 exports equally, the differential voltage value that namely left side magnetic measurement unit 1 exports is
generally Δ R < < R, can draw R for weak magnetic survey
x< < R, R
y< < R, R
z< < R, then in magnetic measurement unit 1, the output voltage of the first magnetic measurement unit 101 and the 3rd magnetic measurement unit 103 can be written as
can calculate thus
order
for characterizing the constant coefficient of GMR sensitive element 8 and bridge offset voltage, then V
x=α N
1n
x, V
z1=α N
2n
z.For sensitive direction be y to magnetic measurement unit 1 in the second magnetic measurement unit 102 and the 4th magnetic measurement unit 104 can draw V equally
y=α N
1n
y, V
z2=α N
2n
z.The magnetic measurement unit 1 of visible x orientation-sensitive and the magnetic measurement unit 1 of y orientation-sensitive can measure z to magnetic field, and measurement result is added and can obtains V
z=V
z1+ V
z2=2 α N
2n
z.Generally, due at the bottom of silicon wafer-based 10 thickness limits, the degree of depth of pit 4 has certain limit, so collector is weaker than amplification to plane inner field, i.e. N to z to the amplification in magnetic field
2< N
1.By adjust size relation, 2N can be made
2≈ N
1, then for the magnetic field n of each axle same magnitude
x=n
y=n
z, magnetic sensor has identical output voltage V
x=V
y=V
z, namely the magnetic-field measurement of magnetic sensor each axle has consistent measurement sensistivity.
Adopt said structure of the present invention, first, highly sensitive; The GMR magnet-sensitive element that the present invention adopts self has higher sensitivity, and collector can also improve the sensitivity that it measures magnetic field, so final magnetic sensor also can reach higher sensitivity further by assembling amplification; Secondly, the orthogonality of magnetic sensor is good, the magnetic sensor that the present invention proposes can adopt MEMS micro-processing technology to make, the orthogonality of x-axis and y-axis magnetic-field measurement in easy guarantee plane, simultaneously, the inclined-plane of magnetic line of force change rail structure measured for the complanation of z-axis vertical magnetic field and the angle of plane depend on silicon crystalline structure, so the orthogonality of z-axis and sensor plane also can ensure, finally realize the magnetic sensor that orthogonality is good; Finally, the magnetic sensor that the present invention proposes has the advantage such as miniaturization, low-power consumption, what invention proposed is a three-axis integrative formula Magnetic Sensor, adopt MEMS technology processing and fabricating, can realize miniaturization, low in energy consumption, usable range is wide, in sensor, all GMR elements are all produced in intrinsic silicon substrate (100) plane simultaneously, easy realization, and with a batch making, make the GMR sensitive element magnetic property of magnetic sensor have good consistance.
In a word, this integral type magnetic sensor based on MEMS technology have employed vertical magnetic field complanation measuring technique, magnetic sensor is highly sensitive, volume low power consumption is low, GMR unit consistance is good, three between centers have good orthogonality, and sensor one-piece construction is simple, easily manufactured, effectively can reduce the cost of manufacture of sensor.
Below be only the preferred embodiment of the present invention, protection scope of the present invention be not only confined to above-described embodiment, all technical schemes belonged under thinking of the present invention all belong to protection scope of the present invention.It should be pointed out that for those skilled in the art, some improvements and modifications without departing from the principles of the present invention, should be considered as protection scope of the present invention.
Claims (5)
1. an integral type high-accuracy triaxial magnetic sensor, it is characterized in that: comprise four magnetic measurement unit (1), signal export and bias electrode, plane collector (2), four magnetic variation rail collectors (3), four pits (4) and substrates (10), described plane collector (2) adopts self symmetrical structure and is positioned at the middle position of substrate (10), described four magnetic variation rail collectors (3) are symmetrically shape distribution at the four sides of plane collector (2), and each described magnetic variation rail collector (3) is all arranged in a pit (4); Each magnetic measurement unit (1) includes the Wheatstone bridge formed with two GMR sensitive elements (8) and two GMR reference elements (7);
Air gap between described plane collector (2) and magnetic variation rail collector (3) is wider than GMR sensitive element (8), described GMR sensitive element (8) is positioned over described air gap place, and described two GMR reference elements (7) lay respectively at magnetic variation rail collector (3) below of described air gap both sides.
2. integral type high-accuracy triaxial magnetic sensor according to claim 1, it is characterized in that: described magnetic variation rail collector (3) comprises collector (903), the inclined-plane collector (902) be positioned on pit (4) inclined-plane at the bottom of the hole being positioned at pit (4) bottom, is positioned at the edge collector (901) at pit (4) edge, and at the bottom of described hole, collector (903), inclined-plane collector (902), edge collector (901) connect as a whole successively.
3. integral type high-accuracy triaxial magnetic sensor according to claim 1, is characterized in that: described GMR reference element (7), GMR sensitive element (8) all adopt spin valve structure or multi-layer film structure.
4. according to the integral type high-accuracy triaxial magnetic sensor in claims 1 to 3 described in any one, it is characterized in that: described substrate (10) adopts intrinsic silicon, four symmetrical pits (4) are etched at 100 plane corrosive liquids of intrinsic silicon after photoetching, the inclined-plane of described pit (4) is 111 planes of intrinsic silicon, is 54.74 ° with the angle of 100 planes.
5. integral type high-accuracy triaxial magnetic sensor according to claim 4, is characterized in that: surface deposition one layer insulating of described intrinsic silicon.
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Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103267520B (en) | 2013-05-21 | 2016-09-14 | 江苏多维科技有限公司 | A kind of three axle digital compasses |
| CN103323795B (en) * | 2013-06-21 | 2015-04-08 | 中国人民解放军国防科学技术大学 | Integrated three-axis magnetic sensor |
| CN104280696A (en) * | 2013-07-03 | 2015-01-14 | 上海矽睿科技有限公司 | Three-axis sensor and manufacturing process thereof |
| CN104459576B (en) * | 2013-09-24 | 2018-03-06 | 上海矽睿科技有限公司 | Magnetic sensing device and its magnetic strength induction method, the preparation technology of magnetic sensing device |
| CN104914385A (en) * | 2014-03-10 | 2015-09-16 | 上海矽睿科技有限公司 | Magnetic sensing device and manufacturing method thereof |
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| CN111007442B (en) * | 2019-12-09 | 2021-04-09 | 中国科学院电子学研究所 | MEMS resonant magnetoresistive sensor for improving resolution of low-frequency magnetic field |
| CN111624525B (en) * | 2020-05-26 | 2022-06-14 | 中国人民解放军国防科技大学 | Integrated three-axis magnetic sensor for suppressing magnetic noise by utilizing magnetic stress regulation and control |
| CN114114102B (en) * | 2021-11-18 | 2024-01-23 | 中国人民解放军国防科技大学 | Integrated planarization triaxial magnetic sensor and application method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998048291A2 (en) * | 1997-04-18 | 1998-10-29 | Koninklijke Philips Electronics N.V. | Magnetic field sensor comprising a wheatstone bridge |
| US6771472B1 (en) * | 2001-12-07 | 2004-08-03 | Seagate Technology Llc | Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments |
| CN101203769A (en) * | 2005-03-17 | 2008-06-18 | 雅马哈株式会社 | Magnetic sensor and manufacturing method thereof |
| CN102279373A (en) * | 2011-07-13 | 2011-12-14 | 中国人民解放军国防科学技术大学 | Uniaxially electrostatic-driven sensor for weak magnetic field measurement |
| CN102353913A (en) * | 2011-07-13 | 2012-02-15 | 中国人民解放军国防科学技术大学 | Measuring transducer driven by monoaxial piezoelectricity for low-intensity magnetic field |
-
2013
- 2013-01-22 CN CN201310023615.1A patent/CN103116143B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998048291A2 (en) * | 1997-04-18 | 1998-10-29 | Koninklijke Philips Electronics N.V. | Magnetic field sensor comprising a wheatstone bridge |
| US6771472B1 (en) * | 2001-12-07 | 2004-08-03 | Seagate Technology Llc | Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments |
| CN101203769A (en) * | 2005-03-17 | 2008-06-18 | 雅马哈株式会社 | Magnetic sensor and manufacturing method thereof |
| CN102279373A (en) * | 2011-07-13 | 2011-12-14 | 中国人民解放军国防科学技术大学 | Uniaxially electrostatic-driven sensor for weak magnetic field measurement |
| CN102353913A (en) * | 2011-07-13 | 2012-02-15 | 中国人民解放军国防科学技术大学 | Measuring transducer driven by monoaxial piezoelectricity for low-intensity magnetic field |
Non-Patent Citations (3)
| Title |
|---|
| Eugene Paperno等.Compensation of Crosstalk in Three-Axial Induction Magnetometers.《IEEE Transactions on Instrumentation and Measurement》.2011,第60卷(第10期), * |
| Jue Chen等.Designs and Characterizations of Soft Magnetic Flux Guides in a 3-D Magnetic Field Sensor.《IEEE Transactions on Magnetics》.2012,第48卷(第4期),第1481-1484页. * |
| 杨茂盛.捷联三轴磁传感器研制及其罗差修正研究.《中国学位论文全文数据库》.2005, * |
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