CN104914385A

CN104914385A - Magnetic sensing device and manufacturing method thereof

Info

Publication number: CN104914385A
Application number: CN201410085278.3A
Authority: CN
Inventors: 张开明; 张挺
Original assignee: SHANGHAI XIRUI TECHNOLOGY Co Ltd
Current assignee: SHANGHAI XIRUI TECHNOLOGY Co Ltd
Priority date: 2014-03-10
Filing date: 2014-03-10
Publication date: 2015-09-16

Abstract

The invention discloses a magnetic sensing device and a manufacturing method thereof. The magnetic sensing device comprises a third-direction magnetic sensing component, wherein the third-direction magnetic sensing component comprises a dielectric material layer, a magnetic conductive unit, an induction unit and a self-detecting coil; a groove is formed in the surface of a substrate; a part of the magnetic conductive unit is arranged in the groove, and a part of the magnetic conductive unit is exposed out of the groove for sensing a magnetic signal in a third direction and outputting the magnetic signal to the induction unit for measurement; the induction unit is arranged at a position close to the part, exposed out of the groove, of the magnetic conductive unit, is used for measuring a magnetic field in a first direction or/and a second direction, and can measure a magnetic field in the third direction guided to the first direction or/and the second direction by the magnetic conductive unit in combination with the magnetic signal outputted by the magnetic conductive unit. The magnetic sensing device further comprises a coil capable of generating a magnetic field, and the generated magnetic field is used for self-detection of the third-direction magnetic sensing component. According to the magnetic sensing device and the manufacturing method thereof, the conductive coil above or below a Z-axis magnetic sensor can be utilized to generate the magnetic field used for self-detection of the Z-axis magnetic sensor.

Description

The preparation method of a kind of magnetic sensing device and this device

Technical field

The invention belongs to semiconductor devices and technology field, relate to a kind of magnetic sensing device, particularly relate to a kind of preparation method of magnetic sensing device.

Background technology

Electronic compass is one of important applied field of Magnetic Sensor, along with the fast development of consumer electronics in recent years, except navigational system, increasing smart mobile phone and panel computer is also had also to start standard configuration electronic compass, bring very large application convenient to user, in recent years, the demand of Magnetic Sensor also starts from two axially three axle development.The Magnetic Sensor of diaxon, i.e. planar magnetic sensor, can be used for magnetic field intensity on measurement plane and direction, can representing by X and Y-axis both direction.

AMR Magnetic Sensor adopts anisotropic magnetoresistance (Anisotropic Magneto-Resistance) material to carry out the size of magnetic induction density in detection space.

Change in a linear fashion to make measurement result, plain conductor on AMR array is 45° angle oblique arrangement, electric current flows through from AMR material and rotates 45 ° through the flow direction of plain conductor after-current and the angle of AMR line, and namely when not having externally-applied magnetic field, AMR line self poling direction and electric current present the angle of 45 ° as shown in Figure 1.

When there is external magnetic field Ha, the polarised direction on AMR unit will change and be no longer initial direction, and so the angle theta of magnetic direction M and electric current I also can change, and as shown in Figure 2, thus causes the change of AMR self resistance.

By the measurement changed AMR cell resistance, intensity and the direction of external magnetic field can be obtained.In the application of reality, in order to improve the sensitivity etc. of device, Magnetic Sensor can utilize Wheatstone bridge or half-bridge to detect the change of AMR resistance, as shown in Figure 3.R1/R2/R3/R4 is the AMR resistance R0 that original state is identical, and in time external magnetic field being detected, R1/R2 resistance increases Δ R and R3/R4 reduces Δ R (or contrary).Like this when not having external magnetic field, the output of electric bridge is zero; And when there being external magnetic field, the output of electric bridge is a small voltage Δ V.

Current three-axis sensor the magnetic sensing element (being erected on substrate in X/Y direction) of a plane (X, Y diaxon) sensing element and Z-direction is carried out system in package combine, to realize the function of three axle sensings; That is need plane sensing element and Z-direction magnetic sensing element to be arranged at respectively on the brilliant or chip of two circles, link together finally by encapsulation and peripheral circuit, three discrete chips inside a sensor component, may be comprised.The advantage of such method has better Z axis performance (substantially the same with the performance of X, Y-axis), technical threshold is lower, but require very high to encapsulation, introduce higher packaging cost (cost of encapsulation occupies the very most of of whole chip cost), on the other hand, the reliability of the device that this method obtains is poor, and the size of device is also difficult to reduce further.

Simultaneously, the Comparison between detecting methods of existing Z axis sensor is complicated, common detection method is on chip test platform, apply peripheral magnetic field, thus the sensitivity of test chip, on the one hand test macro is proposed to higher requirement, improves testing cost, in addition on the one hand, in many applications, still the self-check system using chip internal is needed, such as when mobile phone power-on, often need to carry out Autonomous test, the state of detection chip, the Autonomous test Design and manufacture of Z axis is more difficult, and the precision of more existing self-sensing methods is lower.

In addition, usually need ASIC peripheral circuit to drive in the application of Magnetic Sensor, current main employing asic chip and magnetic sensing chip carry out SIP encapsulation.And the single-chip pattern of SOC is developing direction, be characterized in that there is higher integrated level, better combination property and lower cost.SOC pattern continues to manufacture Magnetic Sensor above the top-level metallic of asic chip, finally makes Magnetic Sensor and ASIC organically combine, and avoids and adopt lead-in wire method to connect.

When manufacture asic chip, 4-6 layer metal level usually can be adopted; Asic chip and Magnetic Sensor in conjunction with time, after the top-level metallic top metal of asic chip finishes, normally deposit the dielectric layer IMD of 3um again, but there is very large difficulty in the lead-in wire of the IMD of 3um, be difficult to connect.Cause existing preparation technology's process CIMS complicated, preparation time is longer, and preparation cost is higher.

In view of this, nowadays in the urgent need to designing a kind of new magnetic sensing device and preparation method, to overcome the above-mentioned defect of existing magnetic sensing device.

Summary of the invention

Technical matters to be solved by this invention is: provide a kind of magnetic sensing device, and coil can be utilized to produce magnetic field, for the Autonomous test of Z axis (third direction) Magnetic Sensor.

In addition, the present invention also provides a kind of preparation method of magnetic sensing device, and obtained Magnetic Sensor can utilize coil to produce magnetic field, for the Autonomous test of Z axis Magnetic Sensor.

For solving the problems of the technologies described above, the present invention adopts following technical scheme:

A kind of magnetic sensing device, described magnetic sensing device comprises third direction magnetic sensing element, and third direction magnetic sensing element comprises:

-layer of dielectric material, its surface has groove;

-magnetic conduction unit, its part is arranged in groove, and has part to expose groove; In order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measure;

-sensing unit, the part exposing groove near magnetic conduction unit is arranged, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction measurement by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;

Described magnetic sensing device also comprises the conductive coil that can produce magnetic field, and the magnetic field of generation is used for the Autonomous test of described third direction magnetic sensing element.

As a preferred embodiment of the present invention, described coil is arranged at the one or both sides along third direction magnetic sensing element gash depth direction, and namely described coil is arranged at the below of third direction magnetic sensing element or/and top.

As a preferred embodiment of the present invention, described third direction magnetic sensing element and peripheral circuit share at least one deck metal level;

Described layer of dielectric material contains peripheral circuit and at least two-layer top layer metallic layer, and at least comprise the first metal layer, the second metal level, the second metal level is positioned at above the first metal layer;

Described coil is positioned at below the first metal layer, or coil is positioned at the top of magnetic conduction unit and sensing unit; Or have plural coil, lay respectively at above and below magnetic cell;

The bottom of described groove is positioned on the first metal layer, and when etching groove, automatic stop terminates in above the first metal layer; Groove is positioned at the side of the second metal level.

As a preferred embodiment of the present invention, described third direction magnetic sensing element and peripheral circuit share at least two metal layers;

A part for described the first metal layer forms coil; Namely a part for the first metal layer plays other effects, and a part forms coil;

As a preferred embodiment of the present invention, the effect that a part for the first metal layer plays also comprises electrical connection, MIM capacitor, shielding.

As a preferred embodiment of the present invention, described coil is arranged at below or the top of third direction magnetic sensing element; Or coil is arranged at below and the top of third direction magnetic sensing element;

Described third direction magnetic sensing element comprises insulation self-stopping technology layer, and the bottom of groove is positioned on described insulation self-stopping technology layer, and when etching groove, automatic stop terminates in above insulation self-stopping technology layer.

As a preferred embodiment of the present invention, described third direction magnetic sensing element also comprises one or more layers metal level be arranged in layer of dielectric material;

Described magnetic sensing device also comprises first direction magnetic sensing element, second direction magnetic sensing element; Described first direction, second direction, third direction are respectively X-axis, Y-axis, Z axis.

As a preferred embodiment of the present invention, described magnetic conduction unit comprises at least two magnetic conduction subelements, namely at least comprise the first magnetic conduction subelement, the second magnetic conduction subelement, each magnetic conduction subelement is arranged in order along the depth direction of groove, is provided with dielectric material between two adjacent magnetic conduction subelements; The part of each magnetic conduction subelement is arranged in groove; The main part of described first magnetic conduction subelement is arranged in groove, and has part to expose groove to substrate surface; The major part of described second magnetic conduction subelement is arranged in groove, and the second magnetic conduction subelement is arranged at the top of the first magnetic conduction subelement, is provided with first medium material between the second magnetic conduction subelement and the first magnetic conduction subelement; This magnetic signal in order to respond to the magnetic signal of third direction, and is outputted to sensing unit and measures by described magnetic conduction unit;

The part that described sensing unit exposes groove near magnetic conduction unit is arranged, be connected with magnetic conduction unit or be provided with gap between the two, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction measurement by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two; Described sensing unit comprises electrode layer and some inductor unit, and each inductor unit is arranged near corresponding magnetic conduction subelement respectively; Described sensing unit comprises some inductor unit, and each inductor unit is arranged near corresponding magnetic conduction subelement respectively; The magnetic signal of each magnetic conduction subelement induction third direction, and the inductor unit this magnetic signal being outputted to correspondence is measured; Each inductor unit measures first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that corresponding magnetic conduction subelement exports, electrode layer can be coordinated to measure and be directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction subelement.

A preparation method for magnetic sensing device, described preparation method comprises: the preparation process of third direction magnetic sensing element, the preparation process of coil;

The preparation process of described third direction magnetic sensing element comprises:

-offer groove on the surface of layer of dielectric material;

-deposition sensing unit, magnetic conduction unit; The part of magnetic conduction unit is arranged in groove, and has part to expose groove; The part that the sensing unit formed exposes groove near magnetic conduction unit is arranged; This magnetic signal in order to respond to the magnetic signal of third direction, and is outputted to sensing unit and measures by magnetic conduction unit; Sensing unit or/and the magnetic field of second direction in order to measure first direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can be measured and is directed to first direction or/and the third direction magnetic field of second direction measurement by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;

The preparation process of described coil comprises: prepare metal level, utilizes this metal level to form coil; The preparation process of coil before the key step preparing third direction magnetic sensing element or/and afterwards.

As a preferred embodiment of the present invention, described preparation method specifically comprises the steps:

Step S101, containing in the substrate of peripheral circuit prepare the 3rd metal level, prepare coil by the 3rd metal level;

Step S102, deposits dielectric materials, then deposit the first metal material, forms the first metal layer;

Step S103, deposits dielectric materials, form through hole, deposit the second metal material, graphically form metallic pattern, obtain the second metal level;

Step S104, deposition medium layer material, adopt chemically mechanical polishing planarization;

Step S105, open through hole, plated metal, carry out photoetching, draw the second metal level;

Step S106, deposition layer of dielectric material on form groove, during etching self-stopping technology on the first metal layer side; The groove formed is positioned at the side of the second metal level;

Step S107, deposit one or more layers dielectric material;

Step S108, deposition of magnetic material, graphically, form sensor pattern; Layer of dielectric material is formed the magnetic material layer of sensing unit, magnetic conduction unit respectively; The part of magnetic conduction unit is arranged in groove, and has part to expose groove; This magnetic signal in order to respond to the magnetic signal of third direction, and is outputted to sensing unit and measures by described magnetic conduction unit; The magnetic material layer of sensing unit is formed at outside groove, sensing unit in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction measurement by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;

Step S109, deposition of insulative material, form insulation material layer;

Step S110, open window, the electrode on flux material layer is drawn, other electrodes are drawn.

Step S201, containing the first metal layer or MIM capacitor layer preparing by the substrate of peripheral circuit, the subregion of the first metal layer or MIM capacitor layer is formed coil, and MIM capacitor effect is played in other regions;

Step S202, deposits dielectric materials, form through hole, deposit the second metal material, graphically form metallic pattern, obtain the second metal level;

Step S203, deposition medium layer material, adopt chemically mechanical polishing planarization;

Step S204, open through hole, plated metal, carry out photoetching, draw the second metal level;

Step S205, deposition layer of dielectric material on form groove, during etching, self-stopping technology plays above the MIM capacitor zone of action at the first metal layer or MIM capacitor layer; The groove formed is positioned at the side of the second metal level;

Step S206, deposit one or more layers dielectric material;

Step S207, deposition of magnetic material, graphically, form sensor pattern; Layer of dielectric material is formed the magnetic material layer of sensing unit, magnetic conduction unit respectively; The part of magnetic conduction unit is arranged in groove, and has part to expose groove; This magnetic signal in order to respond to the magnetic signal of third direction, and is outputted to sensing unit and measures by described magnetic conduction unit; The magnetic material layer of sensing unit is formed at outside groove, sensing unit in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction measurement by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;

Step S208, deposition of insulative material, form insulation material layer;

Step S209, open window, the electrode on flux material layer is drawn, other electrodes are drawn.

As a preferred embodiment of the present invention, in described preparation method, after deposition of magnetic material, also on flux material layer, also deposit one or more layers protects material layer.

Step S202, open through hole, plated metal, carry out photoetching, draw the upper and lower base plate of the first metal layer or MIM capacitor;

Step S203, deposition layer of dielectric material on form groove, during etching, self-stopping technology plays above the MIM capacitor zone of action at the first metal layer or MIM capacitor layer; The groove formed is positioned at the side of the second metal level;

Step S204, deposit one or more layers dielectric material;

Step S205, deposition of magnetic material, graphically, form sensor pattern; Layer of dielectric material is formed the magnetic material layer of sensing unit, magnetic conduction unit respectively; The part of magnetic conduction unit is arranged in groove, and has part to expose groove; This magnetic signal in order to respond to the magnetic signal of third direction, and is outputted to sensing unit and measures by described magnetic conduction unit; The magnetic material layer of sensing unit is formed at outside groove, sensing unit in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction measurement by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;

Step S206, deposition of insulative material, form insulation material layer;

Step S207, open window, the electrode on flux material layer is drawn, other electrodes are drawn.

Step S301, containing the first metal layer or MIM capacitor layer preparing by the substrate of peripheral circuit;

Step S302, deposits dielectric materials, form through hole, deposit the second metal material, graphically form metallic pattern, obtain the second metal level;

Step S303, deposition medium layer material, adopt chemically mechanical polishing planarization;

Step S304, open through hole, plated metal, carry out photoetching, draw the second metal level;

Step S305, deposition layer of dielectric material on form groove, during etching, self-stopping technology is above the first metal layer or MIM capacitor layer; The groove formed is positioned at the side of the second metal level;

Step S306, deposit one or more layers dielectric material;

Step S307, deposition of magnetic material, graphically, form sensor pattern; Layer of dielectric material is formed the magnetic material layer of sensing unit, magnetic conduction unit respectively; The part of magnetic conduction unit is arranged in groove, and has part to expose groove; This magnetic signal in order to respond to the magnetic signal of third direction, and is outputted to sensing unit and measures by described magnetic conduction unit; The magnetic material layer of sensing unit is formed at outside groove, sensing unit in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction measurement by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;

Step S308, deposition of insulative material, form insulation material layer;

Step S309, open window, the electrode on flux material layer is drawn, other electrodes are drawn;

Step S310, deposit metallic material, graphically, obtained third direction magnetic sensing element forms coil.

Step S401, in substrate deposition of insulative material, form insulation self-stopping technology layer;

Step S402, deposition medium layer material, adopt chemically mechanical polishing planarization;

Step S403, in the layer of dielectric material of deposition, form groove, during etching, self-stopping technology is above insulation self-stopping technology layer;

Step S404, deposit one or more layers dielectric material;

Step S405, deposition of magnetic material, graphically, form sensor pattern; Layer of dielectric material is formed the magnetic material layer of sensing unit, magnetic conduction unit respectively; The part of magnetic conduction unit is arranged in groove, and has part to expose groove; This magnetic signal in order to respond to the magnetic signal of third direction, and is outputted to sensing unit and measures by described magnetic conduction unit; The magnetic material layer of sensing unit is formed at outside groove, sensing unit in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction measurement by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;

Step S406, deposition of insulative material, form insulation material layer;

Step S407, open window, prepare the electrode layer of sensing unit, and the electrode layer on flux material layer is drawn;

Step S408, deposition second medium material, fill up groove by second medium material, and do planarization;

Step S409, deposit metallic material, form metal level, utilize this metal level to prepare coil, and obtained third direction magnetic sensing element forms coil.

As a preferred embodiment of the present invention, described preparation method also comprises: manufacture follow-up dielectric layer and metal level, for wiring, or realizes SET/RESET, or realizes Autonomous test.

Beneficial effect of the present invention is: magnetic sensing device that the present invention proposes and preparation method thereof, and the coil above or below Z axis Magnetic Sensor can be utilized to produce magnetic field, for the Autonomous test of Z axis Magnetic Sensor.

In addition, asic chip and Magnetic Sensor also can organically combine by magnetic sensing device of the present invention, groove necessary for Z axis in three-axis sensor is arranged on asic chip inside, reduce the thickness of the dielectric layer that ASIC and sensor chip are arranged, after adopting the present invention, just the signal of ASIC can be drawn out to AMR and top-level metallic with stand CMOS, solve a difficult problem for integrated technique, otherwise must be drawn by ASIC signal by technique of windowing and go between twice or thrice, cost is huge; Further, by the solution of multiple self-stopping technology layer, larger window can be had in the process manufacturing groove, obtain smooth groove, avoid the formation of microtrench; The AMR chip that manufacture of the present invention completes directly can adopt brilliant level encapsulation (WLCSP) of circle to carry out envelope and survey.

The present invention not only can improve preparation efficiency, reduce manufacturing cost, and improves the performance of Z axis sensor, improves product yield.

Accompanying drawing explanation

Fig. 1 is the existing magnetic material of magnetic sensing device and the structural representation of wire.

Fig. 2 is the angle schematic diagram with or without magnetic direction and direction of current in the situation of outfield.

Fig. 3 is the connection layout of Wheatstone bridge.

Fig. 4 is the schematic diagram after embodiment one step S101.

Fig. 5 is the schematic diagram of square coil.

Fig. 6 is the schematic diagram of circular coil.

Fig. 7 is the schematic diagram after embodiment one step S102.

Fig. 8 is the schematic diagram after embodiment one step S103.

Fig. 9 is the schematic diagram after embodiment one step S104.

Figure 10 is the schematic diagram after embodiment one step S105.

Figure 11 is the schematic diagram after embodiment one step S106.

Figure 12 is the schematic diagram after embodiment one step S107.

Figure 13 is the schematic diagram after embodiment one step S108.

Figure 14 is the schematic diagram after embodiment one step S109.

Figure 15 is the schematic diagram after embodiment one step S110.

Figure 16 is the schematic diagram after embodiment one step S111.

Figure 17 is the schematic diagram after embodiment two step S201.

Figure 18 is the schematic diagram after embodiment two step S202.

Figure 19 is the schematic diagram after embodiment two step S203.

Figure 20 is the schematic diagram after embodiment two step S204.

Figure 21 is the schematic diagram after embodiment two step S205.

Figure 22 is the schematic diagram after embodiment two step S206.

Figure 23 is the schematic diagram after embodiment two step S207.

Figure 24 is the schematic diagram after embodiment two step S208.

Figure 25 is the schematic diagram after embodiment two step S209.

Figure 26 is the schematic diagram after embodiment two step S210.

Figure 27 is the schematic diagram after embodiment three step S309.

Figure 28 is the schematic diagram after embodiment three step S310.

Figure 29 is the schematic diagram after embodiment four step S407.

Figure 30 is the schematic diagram after embodiment four step S408.

Figure 31 is the schematic diagram after embodiment four step S409.

Figure 32 is the structural representation of magnetic sensing device in embodiment five.

Embodiment

The preferred embodiments of the present invention are described in detail below in conjunction with accompanying drawing.

Embodiment one

Present invention is disclosed a kind of magnetic sensing device, described magnetic sensing device comprises third direction magnetic sensing element, and third direction magnetic sensing element comprises: layer of dielectric material, magnetic conduction unit, sensing unit.Certainly, described magnetic sensing device also comprises first direction magnetic sensing element, second direction magnetic sensing element; In the present embodiment, described first direction, second direction, third direction are respectively X-axis, Y-axis, Z axis.

The surface of layer of dielectric material has groove.The part (main part) of magnetic conduction unit is arranged in groove, and has part to expose groove; In order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measure.The part that sensing unit exposes groove near magnetic conduction unit is arranged, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction measurement by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two.Described magnetic sensing device also comprises the coil that can produce magnetic field, and the magnetic field of generation is used for the Autonomous test of described third direction magnetic sensing element.

Described coil is arranged at the one or both sides along third direction magnetic sensing element gash depth direction, and namely described coil is arranged at the below of third direction magnetic sensing element or/and top.The setting direction of coil can be parallel with the bottom of groove, namely the setting direction of coil and the degree of depth of groove vertical, that is the setting direction of coil is parallel with sensing unit.Certainly, the setting direction of coil also can have certain angle with sensing unit.As one embodiment of the present invention, the setting direction of coil can be vertical with the main part of magnetic conduction unit.

In the present embodiment, described third direction magnetic sensing element and peripheral circuit share at least two metal layers.Refer to Figure 16, described layer of dielectric material contains peripheral circuit and at least two-layer top layer metallic layer, namely the first metal layer 104, second metal level 106 is at least comprised, second metal level 106 is positioned at above the first metal layer 104, is also provided with second medium insulation material layer 105 between the second metal level 106 and the first metal layer 104.As shown in figure 16, above-mentioned layer of dielectric material can comprise substrate 101, first medium layer 103, second dielectric layer 105, the 3rd dielectric layer 107 etc.Described groove 110(is as shown in figure 12) bottom be positioned on the first metal layer 104, when etching groove 110, automatic stop terminates in above the first metal layer 104; Groove 110 is positioned at the side of the second metal level 106.

Described coil 102 is positioned at below the first metal layer 104, and certainly, coil 102 also can be positioned at the top of magnetic conduction unit 112 and sensing unit 113.The structure (vertical view) of coil 102 can as shown in Figure 5, roughly rectangular; Also can as shown in Figure 6, roughly rounded.

In addition, described third direction magnetic sensing element also comprises one or more layers metal level (can arrange as required) being arranged at and layer of dielectric material (can certainly be arranged at the bottom of layer of dielectric material).

Be described above the structure of magnetic sensing device of the present invention, the present invention is while the above-mentioned magnetic sensing device of announcement, also disclose a kind of preparation method of magnetic sensing device, described preparation method comprises: the preparation process of third direction magnetic sensing element, the preparation process of coil are (certainly, the preparation process of first direction magnetic sensing element, second direction magnetic sensing element can also be comprised, this is prior art, does not repeat here);

-offer groove on the surface of layer of dielectric material;

-deposition sensing unit, magnetic conduction unit; The part of magnetic conduction unit is arranged in groove, and has part to expose groove; The part that the sensing unit formed exposes groove near magnetic conduction unit is arranged; This magnetic signal in order to respond to the magnetic signal of third direction, and is outputted to sensing unit and measures by magnetic conduction unit; Sensing unit or/and the magnetic field of second direction in order to measure first direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can be measured and is directed to first direction or/and the third direction magnetic field of second direction measurement by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two.

Particularly, refer to Fig. 4 to Figure 16, in the present embodiment, described preparation method specifically comprises the steps:

[step S101] refers to Fig. 4, and the 3rd metal level is prepared in the substrate 101 containing peripheral circuit, prepares one group or many group coils 102 by the 3rd metal level; The structure (vertical view) of single group coil 102 can as shown in Figure 5, roughly rectangular; Also can as shown in Figure 6, roughly rounded; Can certainly be other shape, as long as voltage or electric current can be applied produce magnetic field perpendicular to previous level face at the two ends of single group coil.

[step S102] refers to Fig. 7, deposits the first insulating dielectric materials, forms first medium material layer 103, deposits the first metal material, form the first metal layer 104 after photoetching after opening through hole;

[step S103] refers to Fig. 8, deposits the second insulating dielectric materials, forms second medium material layer 105, then forms through hole, deposit the second metal material, graphically form metallic pattern, obtain the second metal level 106;

[step S104] refers to Fig. 9, and deposition the 3rd dielectric layer material, adopts chemically mechanical polishing planarization, forms the 3rd layer of dielectric material 107;

[step S105] refers to Figure 10, opens through hole, plated metal 108, carries out photoetching, draws the second metal level 106 by metal level 109;

[step S106] refers to Figure 11, at layer of dielectric material (comprising above-mentioned second medium material layer 105, the 3rd layer of dielectric material 107) the upper formation groove 110 of deposition, self-stopping technology (the first metal layer 104 can be the material such as Al or TiN or Al/TiN) above the first metal layer 104 during etching; The groove 110 formed is positioned at the side of the second metal level 106;

[step S107] refers to Figure 12, deposits one or more layers insulating dielectric materials (dielectric material of every layer of deposition can be identical or different), forms the 4th layer of dielectric material 111;

[step S108] refers to Figure 13, and deposition of magnetic material (can after deposition of magnetic material, first also depositing one or more layers protects material layer on flux material layer carries out subsequent step again), graphically, forms sensor pattern; 4th layer of dielectric material 111 is formed the magnetic material layer 113 of sensing unit, magnetic conduction unit 112 respectively; The part of magnetic conduction unit 112 is arranged in groove 110, and has part to expose groove 110; This magnetic signal in order to respond to the magnetic signal of third direction, and is outputted to sensing unit and measures by described magnetic conduction unit 112; The magnetic material layer 113 of sensing unit is formed at outside groove 110, sensing unit in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit 112 exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction measurement by magnetic conduction unit 112; First direction, second direction, third direction are mutually vertical between two.

[step S109] refers to Figure 14, deposition of insulative material, forms insulation material layer 114;

[step S110] refers to Figure 15, opens window, is drawn by the electrode layer 115 on flux material layer, is drawn by other electrodes;

[step S111] refers to Figure 16, metallization medium layer 116, then manufactures follow-up metal level 117 and insulating medium layer, and the metal level of preparation may be used for wiring, or realizes SET/RESET, or realizes the Autonomous test of XY axle or Z axis.

The dielectric material of each step deposition above-mentioned can be different material, and the material of part steps deposition also can be identical with other steps.

Embodiment two

The difference of the present embodiment and embodiment one is, in the present embodiment, described third direction magnetic sensing element and peripheral circuit share at least two metal layers (can certainly only have one deck).

Refer to Figure 26, described layer of dielectric material contains peripheral circuit and at least two-layer top layer metallic layer, namely at least comprises the first metal layer 203, second metal level 205, second metal level 205 and is positioned at above the first metal layer.

In the present embodiment, the periphery of described the first metal layer forms coil; Namely the Part I 203 of the first metal layer plays the effect of such as MIM capacitor or electrical connection, and Part II forms coil 202.The structure (vertical view) of coil 202 can as shown in Figure 5, roughly rectangular; Also can as shown in Figure 6, roughly rounded; Also can be other shapes; Coil arranges one group or many groups.Described groove 209(is as Figure 21) bottom be positioned at the first metal layer and play on the self-stopping technology part 203 of MIM capacitor effect, when etching groove 209, automatic stop terminates in this upper of the first metal layer; Groove 209 is positioned at the side of the second metal level 205.

In the present embodiment, refer to Figure 17 to Figure 26, the preparation method of described third direction magnetic sensing element specifically comprises the steps:

[step S201] refers to Figure 17, substrate 201 containing peripheral circuit continues to prepare the first metal layer or MIM capacitor layer (namely containing double layer of metal and a layer insulating, thus form electric capacity), the subregion of the first metal layer or MIM capacitor layer is formed the upper metal substrate that coil 202(coil is manufactured on MIM capacitor, or lower metal substrate, or be manufactured on upper and lower metal substrate simultaneously), other regions (such as self-stopping technology part 203) plays MIM capacitor effect; Certain self-stopping technology part 203 can be independent area of isolation, only plays the effect of etching groove self-stopping technology.The structure (vertical view) of coil 202 can as shown in Figure 5, roughly rectangular; Also can as shown in Figure 6, roughly rounded.

[step S202] refers to Figure 18, and deposition first medium material, forms first medium material layer 204, then form through hole, deposit the second metal material, graphically form metallic pattern, obtain the second metal level 205;

[step S203] refers to Figure 19, and deposition second medium layer material, adopts chemically mechanical polishing planarization, form second medium material layer 206;

[step S204] refers to Figure 20, opens through hole, plated metal 207, carries out photoetching, forms metal level 208, in order to draw the second metal level 205; Or open through hole, plated metal (such as W), chemically mechanical polishing is ground to dielectric layer 206, then deposits other layer of metal, carries out photoetching always, form metal level 208, namely 207 and 208 is not same metal;

[step S205] refers to Figure 21, at layer of dielectric material (comprising first medium material layer 204, second medium material layer 206) the upper formation groove 209 of deposition, during etching, self-stopping technology plays the top of the MIM capacitor zone of action or area of isolation (self-stopping technology part 203) at the first metal layer or MIM capacitor layer; The groove 209 formed is positioned at the side of the second metal level 205;

[step S206] refers to Figure 22, deposits one or more layers dielectric material (dielectric material of every layer of deposition can be identical or different), forms the 3rd layer of dielectric material 210;

[step S207] refers to Figure 23, and deposition of magnetic material (can after deposition of magnetic material, first also depositing one or more layers protects material layer on flux material layer carries out subsequent step again), graphically, forms sensor pattern; 3rd layer of dielectric material 210 is formed the magnetic material layer 212 of sensing unit, magnetic conduction unit 211 respectively; The part of magnetic conduction unit 211 is arranged in groove 209, and has part to expose groove 209; This magnetic signal in order to respond to the magnetic signal of third direction, and is outputted to sensing unit and measures by described magnetic conduction unit 211; The magnetic material layer 212 of sensing unit is formed at outside groove 209, sensing unit in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit 211 exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction measurement by magnetic conduction unit 211; First direction, second direction, third direction are mutually vertical between two;

[step S208] refers to Figure 24, deposition of insulative material, forms insulation material layer 213;

[step S209] refers to Figure 25, opens window, is drawn by the electrode layer 214 on flux material layer, is drawn by other electrodes;

[step S210] refers to Figure 26, metallization medium layer 216, then manufactures follow-up metal level 217 and dielectric layer, and the metal level of follow-up manufacture can be used for wiring, or realizes SET/RESET, or realizes Autonomous test.

Embodiment three

Please participate in Figure 27, Figure 28, the difference of the present embodiment and above embodiment is, in the present embodiment, described coil 315 is arranged at the top of third direction magnetic sensing element; That is, coil 315 is arranged at the top (coil is arranged at the side in groove opening direction) of sensing unit and magnetic conduction unit.

In the present embodiment, refer to Figure 27 to Figure 28, the preparation method of described third direction magnetic sensing element specifically comprises the steps:

[step S301] refers to Figure 27, and the substrate 301 containing peripheral circuit is prepared the first metal layer or MIM capacitor layer 302 or circuit function layer or electric connection layer;

[step S302], please continue to refer to Figure 27, deposition first medium material, forms first medium material layer 303; Then form through hole, deposit the second metal material, graphically form metallic pattern, obtain the second metal level 304;

[step S303] deposits second medium layer material, adopts chemically mechanical polishing planarization, forms second medium material layer 305;

[step S304] as shown in figure 27, opens through hole, plated metal, carries out photoetching, forms metal 306, is used for extraction second metal level 304; Or open through hole, plated metal (such as W), chemically mechanical polishing is ground to dielectric layer 305, then deposits other layer of metal, carries out photoetching always, form metal level 306;

[step S305] is please continue to refer to Figure 27, form groove 307 the layer of dielectric material (comprising first medium material layer 303, second medium material layer 305) of deposition is upper, during etching, self-stopping technology is above the first metal layer or MIM capacitor layer 302 or circuit function layer or electric connection layer; The groove 307 formed is positioned at the side of the second metal level 304;

[step S306] deposits one or more layers dielectric material (dielectric material of every layer of deposition can be identical or different), forms the 3rd layer of dielectric material 308;

[step S307] deposition of magnetic material, graphically, forms sensor pattern; Layer of dielectric material is formed the magnetic material layer 310 of sensing unit, magnetic conduction unit 309 respectively; The part of magnetic conduction unit 309 is arranged in groove 307, and has part to expose groove 307; This magnetic signal in order to respond to the magnetic signal of third direction, and is outputted to sensing unit and measures by described magnetic conduction unit 309; The magnetic material layer 310 of sensing unit is formed at outside groove, sensing unit in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction measurement by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;

[step S308] deposition of insulative material, form insulation material layer 311, this step can be cancelled;

[step S309] opens window, and flux material layer manufactures electrode layer 312, and is drawn by other electrodes 313; As step S308 cancels, then do not need to open window, only need to manufacture the electrode 312 on flux material layer;

[step S310] refers to Figure 28, and deposition the 4th dielectric material, forms the 4th layer of dielectric material 314, planarization; Deposit metallic material, graphically, the part on obtained third direction magnetic sensing element forms coil 315;

[step S311] manufactures follow-up dielectric layer and metal level, for wiring, or realizes SET/RESET, or realizes Autonomous test.

Embodiment four

The difference of the present embodiment and above embodiment is, in the present embodiment, described third direction magnetic sensing element comprises insulation self-stopping technology layer, and the bottom of groove is positioned on described insulation self-stopping technology layer, and when etching groove, automatic stop terminates in above insulation self-stopping technology layer.

Refer to Figure 29, insulation self-stopping technology layer 402 can be arranged in substrate 401, and be provided with layer of dielectric material 403 above insulation self-stopping technology layer 402, the surface of layer of dielectric material has groove 404.

The part (main part) of magnetic conduction unit 406 is arranged in groove 404, and has part to expose groove 404; In order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measure.

The part that sensing unit (comprising magnetic material layer 407, electrode layer 409) exposes groove 404 near magnetic conduction unit 406 is arranged, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit 406 exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction measurement by magnetic conduction unit 406; First direction, second direction, third direction are mutually vertical between two.

In the present embodiment, refer to Figure 29 to Figure 31, the preparation method of described third direction magnetic sensing element specifically comprises the steps:

[step S401] refers to Figure 29, deposition of insulative material in substrate 401, forms insulation self-stopping technology layer 402;

[step S402] deposition medium layer material, adopts chemically mechanical polishing planarization, forms layer of dielectric material 403;

[step S403] forms groove 404 in the layer of dielectric material 403 of deposition, and during etching, self-stopping technology is above insulation self-stopping technology layer 402;

[step S404] deposits one or more layers dielectric material, forms second medium material layer 405;

[step S405] deposition of magnetic material, graphically, forms sensor pattern; Layer of dielectric material is formed the magnetic material layer 407 of sensing unit, magnetic conduction unit 406 respectively; The part of magnetic conduction unit 406 is arranged in groove 405, and has part to expose groove 405; This magnetic signal in order to respond to the magnetic signal of third direction, and is outputted to sensing unit and measures by described magnetic conduction unit 406.The magnetic material layer 407 of sensing unit is formed at outside groove 405, sensing unit in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction measurement by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;

[step S406] deposition of insulative material, forms insulation material layer 408;

[step S407] opens window, prepares the electrode layer 409 of sensing unit, and is drawn by the electrode layer 409 on flux material layer;

[step S408] refers to Figure 30, and deposition the 3rd dielectric material, fills up groove by second medium material, and do planarization, forms the 3rd layer of dielectric material 410;

[step S409] refers to Figure 31, deposit metallic material, forms metal level, utilizes this metal level to prepare coil 411, and obtained third direction magnetic sensing element forms coil 411;

[step S410] manufactures follow-up dielectric layer and metal level, for wiring, or realizes SET/RESET, or realizes Autonomous test.

Embodiment five

The difference of the present embodiment and above embodiment is, in the present embodiment, top and the below of third direction magnetic sensing element arrange conductive coil respectively.Refer to Figure 32, mainly with the difference of embodiment four, before step 401, first first can prepare conductive coil in the below of third direction magnetic sensing element.After arranging like this, magnetic sensing device can have higher magnetic field, strengthens self-monitoring precision.

Embodiment six

The difference of the present embodiment and above embodiment is, in the present embodiment, described magnetic conduction unit comprises at least two magnetic conduction subelements, namely the first magnetic conduction subelement, the second magnetic conduction subelement is at least comprised, each magnetic conduction subelement is arranged in order along the depth direction of groove, is provided with dielectric material between two adjacent magnetic conduction subelements; The part of each magnetic conduction subelement is arranged in groove; The main part of described first magnetic conduction subelement is arranged in groove, and has part to expose groove to substrate surface; The major part of described second magnetic conduction subelement is arranged in groove, and the second magnetic conduction subelement is arranged at the top of the first magnetic conduction subelement, is provided with first medium material between the second magnetic conduction subelement and the first magnetic conduction subelement; This magnetic signal in order to respond to the magnetic signal of third direction, and is outputted to sensing unit and measures by described magnetic conduction unit.

The present embodiment by increasing the quantity of the magnetic material layer of Z axis magnetic conduction unit, thus increases the sensing capability of Z axis, improves sensing capability and the sensitivity of magnetic sensing device.

In sum, magnetic sensing device that the present invention proposes and preparation method thereof, can utilize the coil above or below Z axis Magnetic Sensor to produce magnetic field, for the Autonomous test of Z axis Magnetic Sensor.In addition, asic chip and Magnetic Sensor also can organically combine by magnetic sensing device of the present invention, groove necessary for Z axis in three-axis sensor is arranged on asic chip inside, reduce the thickness of the dielectric layer that ASIC and sensor chip are arranged, after adopting the present invention, just the signal of ASIC can be drawn out to AMR and top-level metallic with stand CMOS, solve a difficult problem for integrated technique, otherwise must be drawn by ASIC signal by technique of windowing and go between twice or thrice, cost is huge; Further, by the solution of multiple self-stopping technology layer, larger window can be had in the process manufacturing groove, obtain smooth groove, avoid the formation of microtrench; The AMR chip that manufacture of the present invention completes directly can adopt brilliant level encapsulation (WLCSP) of circle to carry out envelope and survey.The present invention not only can improve preparation efficiency, reduce manufacturing cost, and improves the performance of Z axis sensor, improves product yield.

Here description of the invention and application is illustrative, not wants by scope restriction of the present invention in the above-described embodiments.Distortion and the change of embodiment disclosed are here possible, are known for the replacement of embodiment those those of ordinary skill in the art and the various parts of equivalence.Those skilled in the art are noted that when not departing from spirit of the present invention or essential characteristic, the present invention can in other forms, structure, layout, ratio, and to realize with other assembly, material and parts.When not departing from the scope of the invention and spirit, can other distortion be carried out here to disclosed embodiment and change.

Claims

1. a magnetic sensing device, is characterized in that, described magnetic sensing device comprises third direction magnetic sensing element, and third direction magnetic sensing element comprises:

-layer of dielectric material, its surface has groove;

2. magnetic sensing device according to claim 1, is characterized in that:

Described coil is arranged at the one or both sides along third direction magnetic sensing element gash depth direction, and namely described coil is arranged at the below of third direction magnetic sensing element or/and top.

3. magnetic sensing device according to claim 1, is characterized in that:

Described third direction magnetic sensing element and peripheral circuit share at least one deck metal level;

Described coil is positioned at below the first metal layer, or coil is positioned at the top of magnetic conduction unit and sensing unit; Or there is plural coil, lay respectively at above and below magnetic cell;

4. magnetic sensing device according to claim 1, is characterized in that:

Described third direction magnetic sensing element and peripheral circuit share at least two metal layers;

Described layer of dielectric material contains peripheral circuit and at least double layer of metal, and at least comprise the first metal layer, the second metal level, the second metal level is positioned at above the first metal layer;

5. magnetic sensing device according to claim 4, is characterized in that:

The effect that a part for the first metal layer plays also comprises electrical connection, MIM capacitor, shielding.

6. magnetic sensing device according to claim 1, is characterized in that:

Described coil is arranged at below or the top of third direction magnetic sensing element; Or coil is arranged at below and the top of third direction magnetic sensing element;

7. the magnetic sensing device according to claim 3 or 4 or 6, is characterized in that:

Described third direction magnetic sensing element also comprises one or more layers metal level be arranged in layer of dielectric material;

8. the magnetic sensing device according to claim 3 or 4 or 6, is characterized in that:

Described magnetic conduction unit comprises at least two magnetic conduction subelements, and namely at least comprise the first magnetic conduction subelement, the second magnetic conduction subelement, each magnetic conduction subelement is arranged in order along the depth direction of groove, is provided with dielectric material between two adjacent magnetic conduction subelements; The part of each magnetic conduction subelement is arranged in groove; The main part of described first magnetic conduction subelement is arranged in groove, and has part to expose groove to substrate surface; The major part of described second magnetic conduction subelement is arranged in groove, and the second magnetic conduction subelement is arranged at the top of the first magnetic conduction subelement, is provided with first medium material between the second magnetic conduction subelement and the first magnetic conduction subelement; This magnetic signal in order to respond to the magnetic signal of third direction, and is outputted to sensing unit and measures by described magnetic conduction unit;

9. a preparation method for magnetic sensing device, is characterized in that, described preparation method comprises: the preparation process of third direction magnetic sensing element, the preparation process of coil;

-offer groove on the surface of layer of dielectric material;

10. the preparation method of magnetic sensing device according to claim 9, is characterized in that:

Described preparation method specifically comprises the steps:

Step S101, containing in the substrate of peripheral circuit prepare the 3rd metal level, utilize the 3rd metal level to prepare coil;

Step S102, deposits dielectric materials, form conductive through hole, then deposit the first metal material, graphically form metallic pattern, forms the first metal layer; The material forming conductive through hole is identical with the first metal material, or different;

Step S103, deposits dielectric materials, form conductive through hole, deposit the second metal material, graphically form metallic pattern, obtain the second metal level; The material forming conductive through hole is identical with the second metal material, or different;

Step S105, formation conductive through hole, deposition the 4th metal, carries out photoetching, draws the second metal level; The material forming conductive through hole is identical with the 4th metal material, or different;

Step S106, deposition layer of dielectric material on form groove, during etching self-stopping technology on the first metal layer side; The groove formed is positioned at the side of the 4th metal level;

Step S107, deposit one or more layers dielectric material;

Step S109, deposition of insulative material, form insulation material layer;

The preparation method of 11. magnetic sensing devices according to claim 10, is characterized in that:

Can skip step S103.

The preparation method of 12. magnetic sensing devices according to claim 9, is characterized in that:

Described preparation method specifically comprises the steps:

Step S202, deposits dielectric materials, form conductive through hole, deposit the second metal material, graphically form metallic pattern, obtain the second metal level;

Step S205, deposition layer of dielectric material on form groove, during etching, self-stopping technology is at the first metal layer or MIM capacitor metal layer; The groove formed is positioned at the side of the second metal level;

Step S206, deposit one or more layers dielectric material;

Step S208, deposition of insulative material, form insulation material layer;

The preparation method of 13. magnetic sensing devices according to claim 11 or 12, is characterized in that:

In described preparation method, after deposition of magnetic material, also on flux material layer, also deposit one or more layers protects material layer.

The preparation method of 14. magnetic sensing devices according to claim 9, is characterized in that:

Described preparation method specifically comprises the steps:

Step S203, deposition layer of dielectric material on form groove, during etching, self-stopping technology is at the first metal layer or MIM capacitor metal layer; The groove formed is positioned at the side of the second metal level;

Step S204, deposit one or more layers dielectric material;

Step S206, deposition of insulative material, form insulation material layer;

The preparation method of 15. magnetic sensing devices according to claim 9, is characterized in that:

Described preparation method specifically comprises the steps:

Step S304, formation conductive through hole, plated metal, carries out photoetching, draws the second metal level;

Step S306, deposit one or more layers dielectric material;

Step S308, deposition of insulative material, form insulation material layer;

The preparation method of 16. magnetic sensing devices according to claim 9, is characterized in that:

Described preparation method specifically comprises the steps:

Step S404, deposit one or more layers dielectric material;

Step S406, deposition of insulative material, form insulation material layer;

The preparation method of 17. magnetic sensing devices according to claim 10 or 12 or 14 or 15 or 16, is characterized in that:

Described preparation method also comprises: manufacture follow-up dielectric layer and metal level, for wiring, or realizes SET/RESET, or realizes Autonomous test.