CN104347798A - Magnetic sensor and preparation method thereof - Google Patents
Magnetic sensor and preparation method thereof Download PDFInfo
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- CN104347798A CN104347798A CN201310340473.1A CN201310340473A CN104347798A CN 104347798 A CN104347798 A CN 104347798A CN 201310340473 A CN201310340473 A CN 201310340473A CN 104347798 A CN104347798 A CN 104347798A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 42
- 239000000696 magnetic material Substances 0.000 claims abstract description 130
- 239000010409 thin film Substances 0.000 claims abstract description 29
- 239000010410 layer Substances 0.000 claims description 135
- 239000000463 material Substances 0.000 claims description 104
- 230000001681 protective effect Effects 0.000 claims description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 30
- 238000005516 engineering process Methods 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 16
- 239000011810 insulating material Substances 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 14
- 239000011241 protective layer Substances 0.000 claims description 12
- 239000012774 insulation material Substances 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 13
- 238000005259 measurement Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 20
- 230000008859 change Effects 0.000 description 10
- 230000004907 flux Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 4
- 230000005381 magnetic domain Effects 0.000 description 4
- 230000001737 promoting effect Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000005538 encapsulation Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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Abstract
The invention discloses a magnetic sensor and a preparation method thereof. The preparation method comprises the following steps: preparing a sensing unit and a magnetic conduction unit of the magnetic sensor respectively, wherein the magnetic conduction unit is used for sensing a magnetic signal in a third signal and outputting the magnetic signal to the sensing unit to perform measurement; measuring a magnetic field in a first direction or/and a second direction by the sensing unit and measuring a magnetic field in a third direction led to the first direction or/and the second direction, wherein the first direction, the second direction and the third direction are perpendicular to one another; the thickness H1 of a magnetic thin film of the magnetic conduction unit on the side wall of a channel is greater than half of the thickness H2 of the magnetic thin film of the sensing unit in the preparation step of the magnetic conduction unit. According to the magnetic sensor and the preparation method thereof, the sensing units in the X, Y and X-axis directions are simultaneously arranged on a single wafer/chip. In addition, the sensing unit in the horizontal direction and the magnetic conduction unit in a Z direction are manufactured in steps, so that the thickness of a magnetic material on the side wall of the channel is increased, and the sensitivity of the device in the Z-axis direction is favorably improved.
Description
Technical field
The invention belongs to semiconductor process techniques field, relate to a kind of transducer, particularly relate to a kind of Magnetic Sensor; Meanwhile, the invention still further relates to a kind of preparation method of Magnetic Sensor.
Background technology
Magnetic Sensor is according to its principle, following a few class can be divided into: Hall element, magnetodiode, anisotropic magnetoresistive element (AMR), tunnel junction magnetic resistance (TMR) element and giant magnetoresistance (GMR) element, induction coil, superconductive quantum interference magnetometer etc.
Electronic compass is one of important applied field of Magnetic Sensor, along with the fast development of consumer electronics in recent years, except navigation system, increasing smart mobile phone and panel computer is also had also to start standard configuration electronic compass, bring very large application convenient to user, in recent years, the demand of Magnetic Sensor also starts from two axially three axle development.The Magnetic Sensor of diaxon, i.e. planar magnetic transducer, can be used for magnetic field intensity on measurement plane and direction, can representing by X and Y-axis both direction.
Below introduce the operation principle of existing Magnetic Sensor.Magnetic Sensor adopts anisotropic magnetoresistance (Anisotropic Magneto-Resistance) material to carry out the size of magnetic flux density in detection space.This alloy material magnetic field to external world with crystal structure is very sensitive, and the power change in magnetic field can cause AMR self-resistance value to change.
In manufacture, application process, be added on AMR unit by a high-intensity magnetic field and make it magnetize in one direction, set up a main magnetic domain, the axle vertical with main magnetic domain is called as the sensitive axes of this AMR, as shown in Figure 1.In order to make measurement result change in a linear fashion, the plain conductor on AMR material is 45° angle oblique arrangement, and electric current flows through from these wires and AMR material, as shown in Figure 2; The main magnetic domain set up on AMR material by initial high-intensity magnetic field and sense of current have the angle of 45 °.
When there is external magnetic field Ha, on AMR unit, main magnetic domain direction will change and be no longer initial direction, and so the angle theta of magnetic direction M and electric current I also can change, as shown in Figure 3.For AMR material, the change at θ angle can cause the change of AMR self resistance, as shown in Figure 4.
By the measurement changed AMR cell resistance, external magnetic field can be obtained.In the application of reality, in order to improve the sensitivity etc. of device, Magnetic Sensor can utilize Wheatstone bridge or half-bridge to detect the change of AMR resistance, as shown in Figure 5.R1/R2/R3/R4 is the AMR resistance that initial condition is identical, and in time external magnetic field being detected, R1/R2 resistance increases Δ R and R3/R4 reduces Δ R.Like this when not having external magnetic field, the output of electric bridge is zero; And when there being external magnetic field, the output of electric bridge is a small voltage Δ V.
Current three-axis sensor the magnetic sensing element of a plane (X, Y diaxon) sensing element and Z-direction is carried out system in package combine, to realize the function of three axle sensings; That is need plane sensing element and Z-direction magnetic sensing element to be arranged at respectively on two circle crystalline substances or chip, link together finally by encapsulation.At present, Dan Yuanjing/chip cannot realize simultaneously the manufacture of three-axis sensor.
In view of this, nowadays in the urgent need to designing a kind of new Magnetic Sensor, with the manufacture making realization carry out three-axis sensor on Dan Yuanjing/chip; And need the effect ensureing sensing simultaneously.
Summary of the invention
Technical problem to be solved by this invention is: the preparation method providing a kind of Magnetic Sensor, contributes to the device sensitivity promoting Z-direction.
In addition, the present invention also provides a kind of Magnetic Sensor, contributes to the device sensitivity promoting Z-direction.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A preparation method for Magnetic Sensor, described preparation method comprises: prepare the sensing unit of Magnetic Sensor, magnetic conduction unit respectively; This magnetic signal in order to respond to the magnetic signal of third direction, and is outputted to sensing unit and measures by described magnetic conduction unit; Described sensing unit measures first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and is directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;
In described magnetic conduction unit preparation process, on trenched side-wall, the thickness H1 of the magnetic thin film of magnetic conduction unit is the over half of the thickness H2 of the magnetic thin film of sensing unit.
As a preferred embodiment of the present invention, the main part of described magnetic conduction unit is formed in groove, and has part to expose groove to substrate surface;
The magnetic material layer of described sensing unit is formed at outside groove, in order to receive the magnetic signal of the third direction that described magnetic conduction unit exports, and measures magnetic field intensity corresponding to third direction and magnetic direction according to this magnetic signal; Magnetic conduction unit is not connected with sensing unit.
As a preferred embodiment of the present invention, described preparation method specifically comprises the steps:
Step S1, in substrate, form groove array;
Step S2, in the substrate being provided with groove array, deposit the first insulating material;
Step S3, deposit the first magnetic material, form the first magnetic material layer; Deposit the first protective material subsequently, form the first protects material layer; Planar magnetic material array is formed, as sensing unit by semiconductor technology;
Step S4, deposit the second insulating material, form the second insulation material layer;
Step S5, deposit the second magnetic material, form the second magnetic material layer, the material of the second magnetic material is identical from the first magnetic material or different; The thickness of the second magnetic material layer is identical from the thickness of the first magnetic material layer or different; Deposit the second protective material subsequently, form the second protects material layer;
Step S6, exposure technology, remove the photoresist of redundance; Etching, remove the second unnecessary protective material, and remove photoresist, remaining second protective material is hard mask;
Step S7, be that hard mask once etches again with remaining second protective layer material of step S6, remove the second magnetic material of redundance, remaining second magnetic material is as the magnetic thin film of magnetic conduction unit;
Step S8, the filling carrying out dielectric layer material and CMP (Chemical Mechanical Polishing) process, and adopt photoetching to carry out perforate in the dielectric layer.
As a preferred embodiment of the present invention, in step S5, the thickness of the second magnetic material layer is greater than the thickness of the first magnetic material layer;
In step S6, the photoresist of reservation comprises the region between sensing unit and groove, and with the part in the groove of this joint area;
In step S8, according to setting, manufacture one deck or many metal levels and dielectric layer.
As a preferred embodiment of the present invention, described preparation method specifically comprises the steps:
Step S1, in substrate, form groove array;
Step S2, in the substrate being provided with groove array, deposit the first insulating material;
Step S3, deposit the first magnetic material, form the first magnetic material layer; Deposit the first protective material subsequently, form the first protects material layer; Planar magnetic material array is formed, as sensing unit by semiconductor technology;
Step S4, deposit the second insulating material, form the second insulation material layer; Step S5, deposit the second magnetic material, form the second magnetic material layer, the material of the second magnetic material is identical from the first magnetic material or different; The thickness of the second magnetic material layer is identical from the thickness of the first magnetic material layer or different; Deposit the second protective material subsequently, form the second protects material layer;
Step S6, exposure technology, remove the photoresist of redundance;
Etching, removes the second unnecessary protective material; Retain the second protective material under photoresist, and the second protective material between photoresist and sensing unit;
Step S7', removal photoresist;
Step S8', be that hard mask once etches with remaining second protective material of step S6' again, remove the second magnetic material of redundance;
Step S9', the filling carrying out dielectric layer material and CMP (Chemical Mechanical Polishing) process, and adopt photoetching to carry out perforate in the dielectric layer.
As a preferred embodiment of the present invention, the distance of the magnetic thin film in described sensing unit and magnetic conduction unit is determined at the thickness of sidewall by regulating the second insulating material between the two.
As a preferred embodiment of the present invention, described preparation method specifically comprises the steps:
Step S1'', in the substrate with cmos circuit, form groove, the fluted substrate of tool deposits the second magnetic material and the second protective material successively, forms the second magnetic material layer and the second protects material layer, form magnetic conduction unit by semiconductor technology;
Step S2'', deposit the second insulating material, form the second insulation material layer;
Step S3'', deposit the first magnetic material and the first protective material successively, form the first magnetic material layer and the first protects material layer, form sensing unit by semiconductor technology; Wherein, the magnetic signal of Z-direction can be collected and be directed to horizontal direction by the second magnetic material in groove, is tested by the first magnetic material layer.
As a preferred embodiment of the present invention, described preparation method specifically comprises the steps:
Step 1, in substrate, form deposition first magnetic material, form the first magnetic material layer; Deposit the first protective material subsequently, form the first protects material layer; Planar magnetic material array is formed, as sensing unit by semiconductor technology;
Step 2, formation groove, and deposit the second insulating layer material;
Step 3, deposit the second magnetic material, form the second magnetic material layer, the material of the second magnetic material is identical from the first magnetic material or different; The thickness of the second magnetic material layer is identical from the thickness of the first magnetic material layer or different; Deposit the second protective material subsequently, form the second protects material layer;
Step 4, form magnetic conduction cell array by semiconductor technology at the sidewall of groove;
Step 5, the filling carrying out dielectric layer material and CMP (Chemical Mechanical Polishing) process, and adopt photoetching to carry out perforate in the dielectric layer; And manufacture follow-up metal level and dielectric layer according to actual needs.
As a preferred embodiment of the present invention, described preparation method comprises: the Magnetic Sensor manufacturing Z-direction, and the Magnetic Sensor in manufacture level direction, namely can manufacture the Magnetic Sensor of three axles on the same chip.
As a preferred embodiment of the present invention, on described trenched side-wall, the thickness H1 of the magnetic thin film of magnetic conduction unit is the over half of the thickness H2 of the magnetic thin film of sensing unit.
A kind of Magnetic Sensor, described Magnetic Sensor comprises: sensing unit, magnetic conduction unit; This magnetic signal in order to respond to the magnetic signal of third direction, and is outputted to sensing unit and measures by described magnetic conduction unit; Described sensing unit measures first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and is directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two; On described trenched side-wall, the thickness H1 of the magnetic thin film of magnetic conduction unit is the over half of the thickness H2 of the magnetic thin film of sensing unit; Magnetic conduction unit is not communicated with sensing unit.
Beneficial effect of the present invention is: Magnetic Sensor that the present invention proposes and preparation method thereof, single round crystalline substance/chip has the axial sensing unit of X, Y and Z tri-simultaneously, alternative integrated ASIC peripheral circuit on single-chip, the CMOS technology of its manufacturing process and standard is completely compatible; There is good manufacturability, excellent performance and obvious price competitiveness.
In addition, the magnetic conduction unit of the present invention's substep manufacture level direction inductor unit and Z-direction, contributes to the device sensitivity promoting Z-direction.Because the sensitivity of Z axis Magnetic Sensor is primarily of the sensitivity of two detecting units and determine towards the intensity of the magnetic signal of detecting unit output; Intensity towards the magnetic signal of detecting unit output is then relevant at the thickness of trenched side-wall magnetic thin film, and namely the thinner performance of thickness is poorer.Why the present invention is divided into two steps manufactures detecting unit (magnetic conduction unit) and signal collection unit (sensing unit), will increase the thickness of trenched side-wall magnetic thin film exactly, thus reaches and put forward highly sensitive object.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the magnetic material of existing Magnetic Sensor.
Fig. 2 is the magnetic material of existing Magnetic Sensor and the structural representation of wire.
Fig. 3 is the angle schematic diagram of magnetic direction and the sense of current.
Fig. 4 is the θ-R characteristic curve schematic diagram of magnetic material.
Fig. 5 is the connection layout of Wheatstone bridge.
Fig. 6 is the vertical view of a magnetic sensing device part of the present invention.
Fig. 7 is that the AA of Fig. 6 is to cutaway view.
Fig. 8 is the schematic diagram of step S1 in embodiment one.
Fig. 9 is the schematic diagram of step S2 in embodiment one.
Figure 10 is the schematic diagram of step S3 in embodiment one.
Figure 11 is the schematic diagram of step S4 in embodiment one.
Figure 12 is the schematic diagram of step S5 in embodiment one.
Figure 13 is the schematic diagram of step S6 in embodiment one.
Figure 14 is the schematic diagram of step S7 in embodiment one.
Figure 15 is the schematic diagram of step S8 in embodiment one.
Figure 16 is the schematic diagram of step S7' in embodiment three.
Figure 17 is the schematic diagram of step S8' in embodiment three.
Figure 18 is the schematic diagram of step S9' in embodiment three.
Figure 19 is the schematic diagram of step S6 in embodiment four.
Figure 20 is the schematic diagram of step S7 in embodiment four.
Figure 21 is the schematic diagram of step S8 in embodiment four.
Figure 22 is the schematic diagram of step 1 in embodiment five.
Figure 23 is the schematic diagram of step 2 in embodiment five.
Figure 24 is the schematic diagram of step 3 in embodiment five.
Embodiment
The preferred embodiments of the present invention are described in detail below in conjunction with accompanying drawing.
Embodiment one
Refer to Fig. 6, Fig. 7, wherein, Fig. 7 is the projection along A-A direction in Fig. 6; Present invention is disclosed a kind of Magnetic Sensor, described Magnetic Sensor comprises Z axis magnetic sensing element, and this Z axis magnetic sensing element comprises: substrate 10, magnetic conduction unit 20, sensing unit; Substrate 10 can comprise CMOS peripheral circuit.
The surface of substrate 10 has dielectric layer, and in dielectric layer, have groove 11.Described substrate is provided with row or some row grooves, and in the present embodiment, a row groove comprises some sub-trenches 11.
The main part of magnetic conduction unit 20 is arranged in groove 11, and has part to expose groove 11 to substrate surface, in order to collect the magnetic signal of Z-direction, and this magnetic signal is exported to sensing unit detects, thus obtain magnetic signal intensity and the direction of Z-direction.
Sensing unit is arranged on described substrate surface, in order to receive the magnetic signal of the Z-direction that described magnetic conduction unit 20 exports, and measures magnetic field intensity corresponding to Z-direction and magnetic direction according to this magnetic signal.Sensing unit can measure first direction or/and the magnetic field of second direction particularly, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and is directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit.Sensing unit comprises flux material layer 30, and some electrodes 40 be arranged in parallel that this flux material layer 30 is arranged.Meanwhile, described sensing unit also in order to respond to the magnetic signal of X-axis, Y direction, and measures magnetic field intensity corresponding to X-axis, Y direction and magnetic direction with this.By the setting of magnetic conduction unit 20, the introduction by magnetic field of Z-direction is measured to horizontal direction by sensing unit.The flux material layer of described magnetic conduction unit 20 and sensing unit can use same magnetic material, and number of layers is consistent, but substep manufacture obtains, and magnetic conduction unit is not communicated with sensing unit (having gap between the two); Flux material layer as magnetic conduction unit 20 and sensing unit can be anisotropic magnetic sensors A MR, also can be TMR and GMR, below repeats no more.Certainly, the flux material layer 30 of described magnetic conduction unit 20 and sensing unit also can use different magnetic materials, or adopts the different numbers of plies.
As shown in Figure 7, the main part of described magnetic conduction unit 20 and the angle of substrate surface place plane can, between 45 ° ~ 90 °, be the bigger the better to collect purer Z axis magnetic signal.The flux material layer 30 of described sensing unit is adjacent to substrate surface and arranges, parallel with substrate surface.But, above-mentioned angle is larger, in the process of magnetic deposition of thin films of material, the deposition rate of the magnetic thin film of side wall deposition declines, the thickness obtaining the magnetic thin film on trenched side-wall under equal conditions is just less, and thickness causes the magnetic sensing sensitivity of third direction less compared with young pathbreaker, this and above-mentioned requirement contradiction.(in the process of thin film deposition, the film that trenched side-wall deposits is much thinner than film horizontally disposed in substrate.) sensitivity of device will be improved, the thickness of the magnetic material film of sidewall must be lifted at.If magnetic conduction unit and sensing unit are for depositing, manufacture formation simultaneously, the magnetic material film thickness of sidewall regulates very difficult.Core of the present invention is improved and is that substep manufactures magnetic conduction unit and sensing unit, in Magnetic Sensor of the present invention, on described trenched side-wall, the thickness H1 of the magnetic thin film of magnetic conduction unit is greater than the over half of the thickness H2 of the magnetic thin film of sensing unit, exceed above-mentioned value even according to the actual needs, ensure that the collection in third direction magnetic field and the efficiency of induction widely, finally improve the performance of third direction Magnetic Sensor.
The present invention is by the separately preparation of magnetic conduction unit, sensing unit; Magnetic conduction unit can be first prepared, also first sensing unit can be prepared.
In the present embodiment, the preparation method of Magnetic Sensor of the present invention comprises the steps (first comprise the step preparing Z axis transducer, comprise):
Step S1, in substrate 101, form groove array 102, as shown in Figure 8;
Step S2, forming the first insulation material layer 103, is individual layer or multilayer, as shown in Figure 9;
Step S3, deposit the first magnetic material, form the first magnetic material layer 104, deposit the first protective material subsequently, form the first protects material layer 105; Planar magnetic material array is formed, as sensing unit, as shown in Figure 10 by semiconductor technology;
Step S4, deposit the second insulating material, form the second insulation material layer 106, as shown in figure 11;
Step S5, deposit the second magnetic material, the material forming the second magnetic material layer 107, second magnetic material is identical from the material of the first magnetic material or different; The thickness of the second magnetic material layer 107 is identical or different from the thickness of the first magnetic material layer 104; Usually, the thickness of the second magnetic material layer 107 is greater than the thickness of the first magnetic material layer 104; Deposit the second protective layer material subsequently, form the second protective layer material layer 108, as shown in figure 12; The thickness being deposited on the magnetic material of trenched side-wall is greater than the over half of magnetic material layer 104 thickness;
Step S6, exposure technology, remove the photoresist of redundance, retain part photoresist 109 as shown in fig. 13 that; The photoresist 109 retained comprises region between sensing unit and groove, and with the part photoresist in the groove of this joint area;
Step S7, etching form structure as shown in figure 14, and remove unnecessary protective layer material, and remove photoresist, remaining second protective layer material 110 is hard mask;
Step S8, to etch again for hard mask with remaining second protective layer material 110, remove the magnetic material of redundance, as shown in figure 15;
Step S9, the filling carrying out dielectric layer material subsequently and CMP (Chemical Mechanical Polishing) process, and adopt photoetching to carry out perforate in the dielectric layer, manufacture one or more layers metal level and dielectric layer according to the actual needs.
In addition, the present invention can also comprise the step of preparation X-axis Y-axis Magnetic Sensor (i.e. horizontal direction Magnetic Sensor), because the Magnetic Sensor preparing horizontal direction is prior art, does not repeat here.
Embodiment two
In the present embodiment, preparation method of the present invention first can manufacture the array of magnetic sensors of plane, then manufactures groove, forms magnetic conduction unit subsequently, specifically comprise the steps: in groove
Step S1, in substrate, form the first magnetic material layer, be individual layer or multilayer, can protective layer material be comprised, form planar magnetic material array, as sensing unit by semiconductor technology;
Step S2, manufacture groove, optionally deposit the second insulating material;
Step S3, deposit the second magnetic material layer, the material of the second magnetic material is identical from the material of the first magnetic material or different; The thickness of the second magnetic material layer is identical from the thickness of the first magnetic material layer or different; Usually, the thickness of the second magnetic material layer is greater than the thickness of the first magnetic material layer; Deposit the second protective layer material subsequently; The thickness being deposited on the second magnetic material of trenched side-wall is greater than the over half of the first magnetic material layer thickness;
Step S4, the manufacture of employing semiconductor technology form magnetic conduction unit;
Step S5, the filling carrying out dielectric layer material subsequently and CMP (Chemical Mechanical Polishing) process, and adopt photoetching to carry out perforate in the dielectric layer, manufacture one or more layers metal level and dielectric layer according to the actual needs.
Embodiment three
The difference of the present embodiment and embodiment one is, the present embodiment comprises the technique that autoregistration manufactures extra small sensing unit and detecting unit gap, specifically comprises:
Step S1, in substrate 101, form groove array 102, as shown in Figure 8;
Step S2, form the first insulation material layer 103, as shown in Figure 9;
Step S3, deposit the first magnetic material, form the first magnetic material layer 104, deposit the first protective material subsequently, form the first protects material layer 105; Planar magnetic material array is formed, as sensing unit, as shown in Figure 10 by semiconductor technology;
Step S4, deposit the second insulating material, form the second insulation material layer 106, as shown in figure 11;
Step S5, deposit the second magnetic material, the material forming the second magnetic material layer 107, second magnetic material is identical from the material of the first magnetic material or different; The thickness of the second magnetic material layer 107 is identical or different from the thickness of the first magnetic material layer 104; Usually, the thickness of the second magnetic material layer 107 is greater than the thickness of the first magnetic material layer 104; Deposit the second protective layer material subsequently, form the second protective layer material layer 108, as shown in figure 12;
Step S6, exposure technology, remove the photoresist of redundance, retain part photoresist 109 as shown in fig. 13 that; The photoresist 109 retained comprises region between sensing unit and groove, and with the part photoresist in the groove of this joint area;
Step S7', etching, remove the second unnecessary protective material; In the process of etching, by the control of etch period, form structure as shown in figure 16, namely go back reserve part second protects material layer; Particularly, retain the second protective material under photoresist, and the second protective material between photoresist and sensing unit;
Step S8', removal photoresist, as shown in figure 17;
Step S9', once to etch again for hard mask with remaining second protects material layer 110, remove the second magnetic material of redundance, as shown in figure 18.Benefit of the present invention is that the distance of sensing unit and the magnetic conduction unit obtained accurately can control to a less scope: in sensing unit and magnetic conduction unit, the distance of magnetic material is determined at the thickness of sidewall by layer of dielectric material (the second insulation material layer 106) between the two, and the thickness controllable precise of layer of dielectric material, and below 100nm can be accomplished easily, such as 50nm; In the application of Z axis transducer, sensitivity and the above-mentioned distance of Z axis Magnetic Sensor are closely bound up.
Embodiment four
The present embodiment is 5 step by step suddenly identical with before preparation method described in embodiment one; Its difference is, in subsequent step, described preparation method's correspondence comprises:
Step S6, exposure technology, remove the photoresist of redundance, retains part photoresist 139 as shown in figure 19; The photoresist 139 retained covers on groove;
Step S7, etching, remove the second unnecessary protective material; Remove photoresist, as shown in figure 20;
Step S8, once to etch again for hard mask with remaining second protects material layer 110, remove the second magnetic material of redundance, as shown in figure 21.Namely inside groove, complete magnetic material is remained with.
Embodiment five
The difference of the present embodiment and above embodiment is, in the present embodiment, first prepares magnetic conduction unit (magnetic thin film of Z-direction), prepares sensing unit (magnetic thin film of horizontal direction) afterwards; In the present embodiment, the preparation method of Magnetic Sensor specifically comprises the steps:
Step 1, in the substrate 201 with cmos circuit, form groove, deposit the second magnetic material layer 202 and the second protects material layer 203 successively, form structure as shown in figure 22 by semiconductor technology;
Step 2, deposit the second insulating layer material 206, as shown in figure 23;
Step 3, deposit the first magnetic material layer 204 and the first protective layer material 205 successively subsequently, form structure as of fig. 24 by semiconductor technology; In structure, the magnetic signal of Z-direction can be collected and be directed to horizontal direction by the second magnetic material layer 202 in groove, is tested by the first magnetic material layer 204.As shown in figure 24, the distance of magnetic conduction unit and sensing unit can be determined by the thickness of the second insulating barrier, can adjust according to actual needs.
Manufacture process also comprises the Magnetic Sensor in manufacture level direction except the Magnetic Sensor of Z-direction, namely can manufacture the Magnetic Sensor of three axles on the same chip.
In sum, Magnetic Sensor that the present invention proposes and preparation method thereof, single round crystalline substance/chip has the axial sensing unit of X, Y and Z tri-simultaneously, alternative integrated ASIC peripheral circuit on single-chip, the CMOS technology of its manufacturing process and standard is completely compatible; There is good manufacturability, excellent performance and obvious price competitiveness.
In addition, the magnetic conduction unit of the present invention's substep manufacture level direction inductor unit and Z-direction, contributes to the device sensitivity promoting Z-direction.Because the sensitivity of Z axis Magnetic Sensor is primarily of the sensitivity of detecting unit and determine towards the intensity of the magnetic signal of detecting unit output; Intensity towards the magnetic signal of detecting unit output is then relevant at the thickness of trenched side-wall magnetic thin film, and namely the thinner performance of thickness is poorer.Why the present invention is divided into two steps manufactures detecting unit (magnetic conduction unit) and signal collection unit (sensing unit), will increase the thickness of trenched side-wall magnetic thin film exactly, thus reaches and put forward highly sensitive object.
Here description of the invention and application is illustrative, not wants by scope restriction of the present invention in the above-described embodiments.Distortion and the change of embodiment disclosed are here possible, are known for the replacement of embodiment those those of ordinary skill in the art and the various parts of equivalence.Those skilled in the art are noted that when not departing from spirit of the present invention or substantive characteristics, the present invention can in other forms, structure, layout, ratio, and to realize with other assembly, material and parts.When not departing from the scope of the invention and spirit, can other distortion be carried out here to disclosed embodiment and change.
Claims (11)
1. a preparation method for Magnetic Sensor, is characterized in that, described preparation method comprises: prepare the sensing unit of Magnetic Sensor, magnetic conduction unit respectively; This magnetic signal in order to respond to the magnetic signal of third direction, and is outputted to sensing unit and measures by described magnetic conduction unit; Described sensing unit measures first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and is directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;
In described magnetic conduction unit preparation process, on trenched side-wall, the thickness H1 of the magnetic thin film of magnetic conduction unit is the over half of the thickness H2 of the magnetic thin film of sensing unit.
2. the preparation method of Magnetic Sensor according to claim 1, is characterized in that:
The main part of described magnetic conduction unit is formed in groove, and has part to expose groove to substrate surface;
The magnetic material layer of described sensing unit is formed at outside groove, in order to receive the magnetic signal of the third direction that described magnetic conduction unit exports, and measures magnetic field intensity corresponding to third direction and magnetic direction according to this magnetic signal;
Magnetic conduction unit is not connected with sensing unit.
3. the preparation method of Magnetic Sensor according to claim 1, is characterized in that:
Described preparation method specifically comprises the steps:
Step S1, in substrate, form groove array;
Step S2, in the substrate being provided with groove array, deposit the first insulating material;
Step S3, deposit the first magnetic material, form the first magnetic material layer; Deposit the first protective material subsequently, form the first protects material layer; Planar magnetic material array is formed, as sensing unit by semiconductor technology;
Step S4, deposit the second insulating material, form the second insulation material layer;
Step S5, deposit the second magnetic material, form the second magnetic material layer, the material of the second magnetic material is identical from the first magnetic material or different; The thickness of the second magnetic material layer is identical from the thickness of the first magnetic material layer or different; Deposit the second protective material subsequently, form the second protects material layer;
Step S6, exposure technology, remove the photoresist of redundance; Etching, remove the second unnecessary protective material, and remove photoresist, remaining second protective material is hard mask;
Step S7, be that hard mask once etches again with remaining second protective layer material of step S6, remove the second magnetic material of redundance, remaining second magnetic material is as the magnetic thin film of magnetic conduction unit;
Step S8, the filling carrying out dielectric layer material and CMP (Chemical Mechanical Polishing) process, and adopt photoetching to carry out perforate in the dielectric layer.
4. the preparation method of Magnetic Sensor according to claim 3, is characterized in that:
In step S5, the thickness of the second magnetic material layer is greater than the thickness of the first magnetic material layer;
In step S6, the photoresist of reservation comprises the region between sensing unit and groove, and with the part in the groove of this joint area;
In step S8, according to setting, manufacture one deck or many metal levels and dielectric layer.
5. the preparation method of Magnetic Sensor according to claim 1, is characterized in that:
Described preparation method specifically comprises the steps:
Step S1, in substrate, form groove array;
Step S2, in the substrate being provided with groove array, deposit the first insulating material;
Step S3, deposit the first magnetic material, form the first magnetic material layer; Deposit the first protective material subsequently, form the first protects material layer; Planar magnetic material array is formed, as sensing unit by semiconductor technology;
Step S4, deposit the second insulating material, form the second insulation material layer; Step S5, deposit the second magnetic material, form the second magnetic material layer, the material of the second magnetic material is identical from the first magnetic material or different; The thickness of the second magnetic material layer is identical from the thickness of the first magnetic material layer or different; Deposit the second protective material subsequently, form the second protects material layer;
Step S6, exposure technology, remove the photoresist of redundance;
Etching, removes the second unnecessary protective material; Retain the second protective material under photoresist, and the second protective material between photoresist and sensing unit;
Step S7', removal photoresist;
Step S8', be that hard mask once etches with remaining second protective material of step S6' again, remove the second magnetic material of redundance;
Step S9', the filling carrying out dielectric layer material and CMP (Chemical Mechanical Polishing) process, and adopt photoetching to carry out perforate in the dielectric layer.
6. the preparation method of Magnetic Sensor according to claim 5, is characterized in that:
The distance of the magnetic thin film in described sensing unit and magnetic conduction unit is determined at the thickness of sidewall by regulating the second insulating material between the two.
7. the preparation method of Magnetic Sensor according to claim 1, is characterized in that:
Described preparation method specifically comprises the steps:
Step S1'', in the substrate with cmos circuit, form groove, the fluted substrate of tool deposits the second magnetic material and the second protective material successively, forms the second magnetic material layer and the second protects material layer, form magnetic conduction unit by semiconductor technology;
Step S2'', deposit the second insulating material, form the second insulation material layer;
Step S3'', deposit the first magnetic material and the first protective material successively, form the first magnetic material layer and the first protects material layer, form sensing unit by semiconductor technology; Wherein, the magnetic signal of Z-direction can be collected and be directed to horizontal direction by the second magnetic material in groove, is tested by the first magnetic material layer.
8. the preparation method of Magnetic Sensor according to claim 1, is characterized in that:
Described preparation method specifically comprises the steps:
Step 1, in substrate, form deposition first magnetic material, form the first magnetic material layer; Deposit the first protective material subsequently, form the first protects material layer; Planar magnetic material array is formed, as sensing unit by semiconductor technology;
Step 2, formation groove, and deposit the second insulating layer material;
Step 3, deposit the second magnetic material, form the second magnetic material layer, the material of the second magnetic material is identical from the first magnetic material or different; The thickness of the second magnetic material layer is identical from the thickness of the first magnetic material layer or different; Deposit the second protective material subsequently, form the second protects material layer;
Step 4, form magnetic conduction cell array by semiconductor technology at the sidewall of groove;
Step 5, the filling carrying out dielectric layer material and CMP (Chemical Mechanical Polishing) process, and adopt photoetching to carry out perforate in the dielectric layer; And manufacture follow-up metal level and dielectric layer according to actual needs.
9., according to the preparation method of the Magnetic Sensor one of claim 1 to 8 Suo Shu, it is characterized in that:
Described preparation method comprises: the Magnetic Sensor manufacturing Z-direction, and the Magnetic Sensor in manufacture level direction, namely can manufacture the Magnetic Sensor of three axles on the same chip.
10., according to the preparation method of the Magnetic Sensor one of claim 1 to 8 Suo Shu, it is characterized in that:
On described trenched side-wall, the thickness H1 of the magnetic thin film of magnetic conduction unit is the over half of the thickness H2 of the magnetic thin film of sensing unit.
11. 1 kinds of Magnetic Sensors, is characterized in that, described Magnetic Sensor comprises: sensing unit, magnetic conduction unit; This magnetic signal in order to respond to the magnetic signal of third direction, and is outputted to sensing unit and measures by described magnetic conduction unit; Described sensing unit measures first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and is directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;
On described trenched side-wall, the thickness H1 of the magnetic thin film of magnetic conduction unit is the over half of the thickness H2 of the magnetic thin film of sensing unit;
Magnetic conduction unit is not communicated with sensing unit.
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| CN102918413A (en) * | 2010-03-31 | 2013-02-06 | 艾沃思宾技术公司 | Process integration of a single chip three axis magnetic field sensor |
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| US20050270020A1 (en) * | 2004-06-03 | 2005-12-08 | Honeywell International Inc. | Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device |
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