CN104515957A - Magnetic sensing apparatus and preparation method thereof - Google Patents
Magnetic sensing apparatus and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a magnetic sensing apparatus and a preparation method thereof. The magnetic sensing apparatus comprises a pedestal, a magnetic conductive unit, a sensing unit and an isolation unit. The surface of the pedestal is provided with grooves; the main body portion of the magnetic conductive unit is arranged in the grooves, and a part of the main body portion of the magnetic conductive unit is exposed out of the grooves, for sensing magnetic signals in a third direction and outputting the magnetic signals to the sensing unit for measurement; the sensing unit is used for measuring the magnetic field in a first direction and/or a second direction, and can measure the magnetic field in the third direction, guided by the magnetic conductive unit to the first direction and/or the second direction for measurement through combination with the magnetic signals output by the magnetic conductive unit; and the sensing unit comprises a first magnetic material layer and an electrode layer, and the magnetic material of the magnetic conductive unit is partially separated from the first magnetic material layer (separated by the isolation unit) and is partially connected with the first magnetic material layer. According to the invention, the portion of currents flowing from the sensing unit to the magnetic conductive unit can be reduced, the OFF-SET is reduced, at the same time, Z-axis magnetic signals acquired by the magnetic conductive unit can be efficiently sent to the sensing unit for testing, and the comprehensive performance is competitive.
Description
Technical field
The invention belongs to magnetic field of sensing technologies, relate to a kind of sensor, particularly relate to a kind of three axle magnetic sensing devices; Meanwhile, the invention still further relates to a kind of preparation method of three axle magnetic sensing devices.
Background technology
Electronic compass is one of important applied field of Magnetic Sensor, along with the fast development of consumer electronics in recent years, except navigational system, increasing smart mobile phone and panel computer is also had also to start standard configuration electronic compass, bring very large application convenient to user, in recent years, the demand of Magnetic Sensor also starts from two axially three axle development.The Magnetic Sensor of diaxon, i.e. planar magnetic sensor, can be used for magnetic field intensity on measurement plane and direction, can representing by X and Y-axis both direction.
AMR Magnetic Sensor adopts anisotropic magnetoresistance (Anisotropic Magneto-Resistance) material to carry out the size of magnetic induction density in detection space.
Change in a linear fashion to make measurement result, plain conductor on AMR array is 45° angle oblique arrangement, electric current flows through from AMR material and rotates 45 ° through the flow direction of plain conductor after-current and the angle of AMR line, and namely when not having externally-applied magnetic field, AMR line self poling direction and electric current present the angle of 45 ° as shown in Figure 1.
When there is external magnetic field Ha, the polarised direction on AMR unit will change and be no longer initial direction, and so the angle theta of magnetic direction M and electric current I also can change, and as shown in Figure 2, thus causes the change of AMR self resistance.
By the measurement changed AMR cell resistance, intensity and the direction of external magnetic field can be obtained.In the application of reality, in order to improve the sensitivity etc. of device, Magnetic Sensor can utilize Wheatstone bridge or half-bridge to detect the change of AMR resistance, as shown in Figure 3.R1/R2/R3/R4 is the AMR resistance R0 that original state is identical, and in time external magnetic field being detected, R1/R2 resistance increases Δ R and R3/R4 reduces Δ R (or contrary).Like this when not having external magnetic field, the output of electric bridge is zero; And when there being external magnetic field, the output of electric bridge is a small voltage Δ V.
Current three-axis sensor the magnetic sensing element (being erected on substrate in X/Y direction) of a plane (X, Y diaxon) sensing element and Z-direction is carried out system in package combine, to realize the function of three axle sensings; That is need plane sensing element and Z-direction magnetic sensing element to be arranged at respectively on the brilliant or chip of two circles, link together finally by encapsulation and peripheral circuit, three discrete chips inside a sensor component, may be comprised.The advantage of such method has better Z axis performance (substantially the same with the performance of X, Y-axis), technical threshold is lower, but require very high to encapsulation, introduce higher packaging cost (cost of encapsulation occupies the very most of of whole chip cost), on the other hand, the reliability of the device that this method obtains is poor, and the size of device is also difficult to reduce further.
Therefore, the manufacture realizing the magnetic sensor chip on same chip is the direction of future development, and in order to realize this target, the applicant has applied for a patent of invention on Dec 24th, 2012, name is called " a kind of preparation technology of magnetic sensing device ", and the patent No. is 201210563952.5; In this device architecture and technique, be arranged in groove by magnetic conduction unit, magnetic conduction unit is sent into sensing unit for the magnetic field responding to Z-direction and is measured; Sensing unit is then arranged near groove, can receive the signal of magnetic conduction unit, and go out the magnetic field of Z-direction according to this signal measurement.So, the magnetic sensor of single-chip is achieved.
Based on the magnetic field obtain manner of Z-direction, do not establish gap between some scheme magnetic conduction unit (trench portions) and sensing unit, some then arranges gap, as shown in Fig. 4, Fig. 6.The difference of both is that magnetic conduction unit and sensing unit separate completely or be connected completely.
In addition, as mentioned above, in the Wheatstone bridge that Magnetic Sensor adopts, in ideal conditions, R1/R2/R3/R4 is the AMR resistance R0 that original state is identical, because electric bridge is for the state of balance, is 0 at the output voltage of output terminal; But in the application of reality, because a variety of causes, the resistance of R1/R2/R3/R4 is not strictly equal (such as equaling R0), therefore the balance of electric bridge will be broken, once balance is broken, just have voltage to export at output terminal, this do not having have the output of voltage to be just called zero migration (OFF-SET) because electric bridge is uneven under external magnetic field state, and this parameter and sensitivity become most important two parameters of Magnetic Sensor.Larger OFF-SET, represent the imbalance that electric bridge is serious, as shown in Figure 8, two curve intersections of forward and reverse scan are not at initial point, namely when being also the output having numerical value without any electric bridge when outfield, if this OFF-SET value is too large, bring challenges to the signal transacting of ASIC peripheral circuit, one of them important function of ASIC is exactly carry out the compensation of OFF-SET, and OFF-SET value too large compensation then can be failed.
Get back in the scheme of above-mentioned Z axis Magnetic Sensor, do not have apertured scheme, magnetic induction sensitivity is better its feature, but shortcoming has larger OFF-SET, apparent on the impact of Magnetic Sensor.Why produce larger OFF-SET, because when not having apertured, metal electrode above magnetic material between electric current can be shunted by the nonmagnetic electrically conductive material of trenched side-wall, (the magnetic material thickness of groove side is often different from opposite side because the reason of technique often has larger difference to add the thickness of the magnetic material of upper side wall, derive from magnetron sputtering and there is certain directivity), the resistance of four brachium pontis of electric bridge may be variant, namely (the resistance difference 1% between four brachium pontis is easily to cause larger OFF-SET value, but the OFF-SET that the difference of 1% causes is completely unacceptable).Meanwhile, the shunting on trenched side-wall nonmagnetic electrically conductive material also can affect sensitivity and other performances of device.
And in the scheme of " a kind of preparation technology of magnetic sensing device " that apply for before above-mentioned the applicant, gap is set by between magnetic conduction unit (trench portions) and sensing unit.Arrange in the scheme in gap, because the existence in gap, electrical insulation between sensing unit and magnetic conduction unit, go in the magnetic conduction unit that electric current on sensing unit can not flow to groove, therefore, OFF-SET is just well controlled, but because the existence in gap, likely reduce the signal of device, can be lossy when the dielectric material that magnetic signal is arranged by magnetic conduction unit and sensing unit centre, the magnetic signal that sensing unit finally receives is relatively weak, thus affect sensitivity, our research finds that the sensitivity of Z axis sensor component is relevant to the size in gap.
In view of this, nowadays in the urgent need to designing a kind of new magnetic sensing device, to overcome the above-mentioned defect of existing Magnetic Sensor, realize the device architecture that integration capability is stronger, and reduce the requirement to pairing ASIC circuit.
Summary of the invention
Technical matters to be solved by this invention is: the invention provides a kind of magnetic sensing device, can effectively reduce the ratio flowing to magnetic conduction cell current from sensing unit, reduce OFF-SET, the Z axis magnetic signal that magnetic conduction unit obtains simultaneously can be sent into sensing unit and detect under the prerequisite of less loss, and combination property has competitive power.
In addition, the present invention also provides a kind of preparation method of magnetic sensing device, obtained magnetic sensing device can reduce the ratio flowing to magnetic conduction cell current from sensing unit effectively, have the Z axis magnetic signal that magnetic conduction unit obtains in arms to send into sensing unit under the prerequisite of less loss and test, combination property has competitive power simultaneously.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of magnetic sensing device, described device comprises third direction magnetic sensing element, and this third direction magnetic sensing element comprises:
-substrate, its surface has groove;
-magnetic conduction unit, its main part is arranged in groove, and has part to expose groove to substrate surface, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures;
-sensing unit, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction measurement by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;
Described sensing unit comprises the first flux material layer, electrode layer, and described magnetic conduction unit, the first flux material layer part are disconnected by isolated location, and part links together; Described electrode layer comprises the some electrodes be arranged in parallel, and described magnetic conduction unit is provided with some isolated vias near the side of each electrode, and isolated vias is pressed close to corresponding electrode and arranged, and isolated vias is just by electrode and magnetic conduction cell mesh or all separate;
Described magnetic sensing device also comprises the first Magnetic Sensor, the second Magnetic Sensor, respectively in order to respond to the first direction parallel with substrate surface, the magnetic signal of second direction; First direction, second direction are mutually vertical.
Preferably, insulating dielectric materials layer is had between the first flux material layer of sensing unit, electrode layer.
A kind of magnetic sensing device, described device comprises third direction magnetic sensing element, and this third direction magnetic sensing element comprises:
Substrate, its surface has groove;
Magnetic conduction unit, its main part is arranged in groove, and has part to expose groove to substrate surface, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures;
Sensing unit, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction measurement by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two; Described sensing unit comprises the first flux material layer, electrode layer, and described magnetic conduction unit, the first flux material layer part are disconnected by isolated location, and part links together.
As a preferred embodiment of the present invention, described magnetic sensing device also comprises the first Magnetic Sensor, the second Magnetic Sensor, respectively in order to respond to the first direction parallel with substrate surface, the magnetic signal of second direction; First direction, second direction are mutually vertical.
As a preferred embodiment of the present invention, described magnetic conduction unit comprises four magnetic conduction subelements, is respectively the first magnetic conduction subelement, the second magnetic conduction subelement, the 3rd magnetic conduction subelement, the 4th magnetic conduction subelement;
Described sensing unit comprises four inductor unit, is respectively the first inductor unit, the second inductor unit, the 3rd inductor unit, the 4th inductor unit;
Described first magnetic conduction subelement and the first inductor unit matching, as the first induction module of third direction magnetic sensing element;
Described second magnetic conduction subelement and the second inductor unit matching, as the second induction module of third direction magnetic sensing element;
Described 3rd magnetic conduction subelement and the 3rd inductor unit matching, as the 3rd induction module of third direction magnetic sensing element;
Described 4th magnetic conduction subelement and the 4th inductor unit matching; As the 4th induction module of third direction magnetic sensing element;
Above-mentioned each inductor unit comprises flux material layer, and the resistance of this magnetic material changes along with the direction of magnetic field intensity;
Described substrate is provided with row or some row grooves, and a row groove is made up of a long groove, or a row groove comprises some sub-trenches;
Each magnetic conduction subelement comprises some magnetic components, and the main part of each magnetic component is arranged in corresponding groove, and has part to be exposed to outside groove.
As a preferred embodiment of the present invention, described magnetic conduction unit comprises the first permeable section, second permeable section of the both sides being arranged at groove respectively; The main part of the first permeable section, the second permeable section is arranged in groove, and has part to expose groove to substrate surface; First permeable section and the second permeable section in order to collect the field signal of vertical direction, and export this field signal to sensing unit;
Described sensing unit is arranged on the both sides of groove, described substrate surface, cooperatively interacts with the first permeable section in described groove and the second permeable section; Described sensing unit is induction and the Magnetic Sensor of substrate surface parallel direction, in order to receive the magnetic signal from vertical direction that described magnetic conduction unit exports, and measures magnetic field intensity corresponding to vertical direction and magnetic direction according to this magnetic signal; Described vertical direction is the vertical direction of substrate surface.
As a preferred embodiment of the present invention, described electrode layer comprises the some electrodes be arranged in parallel, described magnetic conduction unit is provided with some isolated vias near the side of each electrode, and isolated vias is pressed close to corresponding electrode and arranged, and isolated vias is just by electrode and magnetic conduction cell mesh or all separate;
As a preferred embodiment of the present invention, described electrode layer comprises the some electrodes be arranged in parallel, and described magnetic conduction unit is provided with some isolated vias near the side of each electrode;
One end of described isolated vias is arranged near electrode, or one end of isolated vias is between two electrodes;
An isolated vias answered by an electrode pair, or multiple isolated vias answered by an electrode pair; A corresponding electrode of isolated vias, or a corresponding multiple electrode of isolated vias; Each electrode is equipped with corresponding isolated vias, or partial electrode periphery does not arrange isolated vias.
As a preferred embodiment of the present invention, between the first flux material layer of sensing unit, electrode layer, there is insulating dielectric materials layer.
As a preferred embodiment of the present invention, described substrate has peripheral circuit.
As a preferred embodiment of the present invention, described flux material layer comprises the protective layer material of one deck or multilayer.
As a preferred embodiment of the present invention, described isolated vias is rectangle or trapezoidal or triangle or polygon along the cross section of base plane.
A preparation method for magnetic sensing device, described preparation method comprises the preparation process of third direction magnetic sensing element, specifically comprises:
Step S1, form groove on the surface of the substrate;
Step S2, deposit magnetic material described establishing in fluted substrate, form flux material layer, a part for flux material layer is positioned at upper surface of substrate, and another part is positioned at groove;
Step S3, graphical, generate the figure of Magnetic Sensor, form the first flux material layer of sensing unit; Form isolated vias simultaneously, and form magnetic conduction unit by the application of groove; Described magnetic conduction unit, the first flux material layer disconnect because isolated vias exists part, and part links together;
The main part of described magnetic conduction unit is arranged in groove, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures; Sensing unit is arranged near groove, be connected with part between magnetic conduction unit, partly disconnect, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;
The deposition of step S5, metal electrode and graphical, forms the electrode layer of sensing unit;
Step S6, deposition insulating dielectric materials, manufacture through hole and electrode, namely form three-axis sensor on a single chip.
As a preferred embodiment of the present invention, in described step S2, the substrate of employing is the substrate with circuit.
As a preferred embodiment of the present invention, in described step S2, described flux material layer deposits one or more layers protective material, form one or more layers protects material layer.
As a preferred embodiment of the present invention, in described step S3, the first flux material layer of disposable formation sensing unit, magnetic conduction unit, and the isolated vias between the first flux material layer and magnetic conduction unit; Or several times, form the first flux material layer of sensing unit, magnetic conduction unit respectively, and the isolated vias between the first flux material layer and magnetic conduction unit.
As a preferred embodiment of the present invention, between described step S3 and step S5, also comprise step S4: fill insulating dielectric materials, open hole.
Beneficial effect of the present invention is: magnetic sensing device that the present invention proposes and preparation method thereof, the isolated location of aligned transfer is there is between sensing unit and magnetic conduction unit, isolated location can reduce the ratio flowing to magnetic conduction cell current from sensing unit effectively, for the OFF-SET reducing electric bridge, there is significant effect, the Z axis magnetic signal of magnetic conduction unit collection simultaneously can be sent into sensing unit efficiently and test, combination property has competitive power, and manufacturing process is simple, and cost is lower.
In the solution of the present invention, the connection of part is had between permeable section and sensing unit (sensor part), but separated by some isolated locations again, such benefit is: do not have apertured remolding sensitivity better between permeable section and sensing unit, but OFF-SET very poor (severity of skew), represents the very uneven of electric bridge.And apertured signal is more weak, but skew OFF-SET relatively good (offseting less); Having the electric current of gap on sensing unit can not flow in groove to go, is one of main source of OFF-SET.Present invention incorporates feature and the advantage of above-mentioned two kinds, between sensitivity and OFF-SET, do good balance.
Accompanying drawing explanation
Fig. 1 is the existing magnetic material of magnetic sensing device and the structural representation of wire.
Fig. 2 is the angle schematic diagram with or without magnetic direction and direction of current in the situation of outfield.
Fig. 3 is the connection layout of Wheatstone bridge.
Fig. 4-1 is the structural representation not having apertured Magnetic Sensor between magnetic conduction unit and sensing unit.
Fig. 4-2 is the sectional view of Fig. 4-1.
Fig. 5 overlooks isoboles after not having apertured Magnetic Sensor to be launched by trenched side-wall magnetic material between magnetic conduction unit and sensing unit.
Fig. 6-1 is the structural representation of apertured Magnetic Sensor between magnetic conduction unit and sensing unit.
Fig. 6-2 is the sectional view of Fig. 6-1.
Fig. 7 be between magnetic conduction unit and sensing unit apertured Magnetic Sensor trenched side-wall magnetic material is launched after overlook isoboles.。
Fig. 8 is the device bridge test schematic diagram with larger OFF-SET.
Fig. 9 is the vertical view of magnetic sensing device of the present invention in embodiment one.
Figure 10 is that the A-A of Fig. 9 is to cut-open view.
Figure 11 is that the B-B of Fig. 9 is to cut-open view.
Figure 12 is the vertical view of magnetic sensing device in embodiment two.
Figure 13 is the schematic diagram in preparation method after step S1.
Figure 14 is the schematic diagram in preparation method after step S3.
Figure 15 is the cut-open view (section is through isolated vias) of Figure 14.
Figure 16 is the cut-open view (section is not through isolated vias) of Figure 14.
Figure 17 is the schematic diagram (section is not through isolated vias) in preparation method after step S4.
Figure 18 is another schematic diagram (section is through isolated vias) in preparation method after step S4.
Figure 19 is the schematic diagram (one end of isolated vias is between two electrodes) of magnetic sensing device in embodiment three.
Figure 20 is the schematic diagram (multiple isolated vias answered by an electrode pair) of magnetic sensing device in embodiment three.
Figure 21 is the composition schematic diagram of a magnetic sensing device component units.
Figure 22 is the composition schematic diagram of a magnetic sensing device component units in embodiment four.
Figure 23 is the stereographic map (cross section of isolated vias is rectangle) of the magnetic sensing device that Fig. 9 is corresponding.
Figure 24 is the stereographic map (cross section of isolated vias is trapezoidal) of the magnetic sensing device that Figure 12 is corresponding.
The stereographic map of Figure 25 to be the cross section of isolated vias in embodiment two be oval magnetic sensing device.
Figure 26 is the perspective view that in embodiment six, magnetic sensing device edge does not have isolated vias direction.
Figure 27 is the perspective view that in embodiment six, there is isolated vias direction on magnetic sensing device edge.
Figure 28 is the vertical view of magnetic sensing device of the present invention in embodiment six.
Embodiment
The preferred embodiments of the present invention are described in detail below in conjunction with accompanying drawing.
Embodiment one
Z axis Magnetic Sensor comprises magnetic conduction unit and sensing unit, permeable section in groove and do not have Magnetic Sensor when gap between sensing unit as shown in Fig. 4-1, its sectional view as shown in the Fig. 4-2, Fig. 5 be by trenched side-wall magnetic material launch after overlook isoboles, can see that this structure magnetic conduction unit 30 is directly connected with the flux material layer 21 of sensing unit.The feature of this structure is: do not have apertured remolding sensitivity better, but because magnetic material is also conductive material, therefore the electrode 22 above magnetic material between the electric current of circulation can be diverted to the sidewall of groove, therefore the OFF-SET obtained during device bridge test is very poor, represent electric bridge very uneven, as can see from Figure 8, two lines going cross each other are not at initial point, and such ASIC peripheral circuit is difficult to process such signal.
Trench portions and sensing unit have the Magnetic Sensor of slit as in Figure 6-1, shown in Fig. 7, its sectional view as in fig. 6-2.Be characterized in: be seamed between trench portions and sensing unit, apertured signal is more weak but OFF-SET is relatively good, and (electric current that apertured structure flows between sensing unit electrode pair can not flow in groove and go, and this part electric current is one of main source of OFF-SET, explained before reason).
Shown by our research, arrange the isolated location of insulation between magnetic conduction unit and sensing unit, flow to the electric current of groove by decline more than 20% from sensing unit, the reduction for OFF-SET is helpful.Therefore, the present invention proposes a kind of new device architecture, between permeable section and sensing unit, be provided with isolated location, but has again part to be connected between the two; Isolated location can reduce the current ratio flowing to groove, reduces OFF-SET, is unlikely to again the sensitivity obviously reducing device simultaneously; Therefore, present invention incorporates feature and the advantage of above-mentioned two schemes, between sensitivity and OFF-SET, do good balance, there is good combination property.
Present invention is disclosed a kind of three axle magnetic sensing devices, comprise Z axis Magnetic Sensor, X-axis Magnetic Sensor, Y-axis Magnetic Sensor, X-axis Magnetic Sensor, Y-axis Magnetic Sensor are respectively in order to respond to the X-axis parallel with substrate surface, the magnetic signal of Y direction.Certainly, three axle magnetic sensing devices also can comprise three Magnetic Sensors, respond to the magnetic signal of first direction, second direction, third direction respectively, and first direction, second direction, third direction are mutually vertical between two.
Refer to Fig. 9, the structure of described Z axis Magnetic Sensor as shown in Figure 9 (Figure 23 is the stereographic map of its correspondence), distinguish as shown in Figure 10 and Figure 11 (in the projection in A-A direction, sensing unit is connected with magnetic conduction unit, and in the projection in B-B direction, sensing unit is not connected with magnetic conduction unit) along A-A direction with the projection in B-B direction in figure.Described Z axis Magnetic Sensor mainly comprises substrate 10, magnetic conduction unit 30, sensing unit 20.
The surface of substrate 10 has groove.Particularly, described substrate 10 can be provided with row or some row grooves, and a row groove is made up of a long groove, or a row groove comprises some sub-trenches.Substrate 10 can contain integrated circuit, such as peripheral control circuits.
The main part of magnetic conduction unit 30 is arranged in groove, and has part to expose groove to substrate 10 surface, in order to respond to the magnetic signal of Z-direction, and this magnetic signal is outputted to sensing unit 20 measures.
Sensing unit 20, except measuring X-axis or/and the magnetic field of Y direction, can also be measured and is directed to X-axis or/and the Z-direction magnetic field of Y direction measurement by magnetic conduction unit 30.Described sensing unit 30 comprises the first flux material layer 21, electrode layer 22, and described magnetic conduction unit 30, first flux material layer 21 is disconnected by isolated vias 40 part, and part links together.Can insulation material layer be had between first flux material layer 21, electrode layer 22, and have through hole in the position that electrode is crossing with the first material layer.Magnetic conduction unit comprises the flux material layer being arranged at substrate, in order to distinguish with the first flux material layer, can be called the second flux material layer; Second flux material layer and the first flux material layer are same layer magnetic materials.Described flux material layer (as being the AMR material of individual layer, or GMR or the TMR material of multilayer) except the magnetic material layer of one deck or multilayer, flux material layer also can comprise protective layer material; Electrode layer 22 comprises some electrodes (preferably be arrangeding in parallel), described magnetic conduction unit 30 is provided with some insulation isolated vias 40 near the side of each electrode, insulation isolated vias 40 is pressed close to corresponding electrode and is arranged, electrode and magnetic conduction unit 30 are separated by isolated vias 40 just, also have the case that partial division is opened in follow-up embodiment.
In the present embodiment, electrode and channel shaped angle at 45 ° (this angle can adjust according to the requirement of reality, in general, selects the output of 45 ° to have the good linearity), what the length (along groove bearing of trend) of isolated vias 40 was electrode width
doubly arrive
doubly, be preferably
doubly, and press close to electrode setting, electrode and magnetic conduction unit 30 electric isolation can be opened; Width is between 1 nanometer is to 100 microns, such as 10 or 50 nanometers or 200 nanometers or 500 nanometers, adopt less width also slightly to help for the sensitivity improving device further, but, obviously to the manufacturing process of device, very high requirement can be proposed, more difficult realization.Certainly, the width of isolated vias 40 can be greater than electrode width
doubly, optimum position is that the one end pressing close to electrode is arranged, and electrode and magnetic conduction unit 30 is kept apart.In the present embodiment, described isolated vias 40 is rectangle along the cross section of substrate 10 plane, but the isolated vias shape of obvious this insulation can be any shape.
Refer to Figure 21, described magnetic conduction unit 30 comprises four magnetic conduction subelements, is respectively the first magnetic conduction subelement, the second magnetic conduction subelement, the 3rd magnetic conduction subelement, the 4th magnetic conduction subelement.Each magnetic conduction subelement comprises some magnetic components, and the main part of each magnetic component is arranged in corresponding groove, and has part to be exposed to outside groove; Exposed portion is arranged near the flux material layer of corresponding inductor unit.
Described sensing unit comprises four inductor unit, is respectively the first inductor unit, the second inductor unit, the 3rd inductor unit, the 4th inductor unit.Above-mentioned each inductor unit comprises flux material layer 21, the resistance of magnetic material of this flux material layer 21 and the directional correlation of magnetic field intensity, the electrical resistance magnetic field intensity of magnetic material and the change in direction and change.
Described first magnetic conduction subelement and the first inductor unit matching, as the first magnetic sensing module of Z axis magnetic sensing element; Described second magnetic conduction subelement and the second inductor unit matching, as the second magnetic sensing module of Z axis magnetic sensing element; Described 3rd magnetic conduction subelement and the 3rd inductor unit matching, as the 3rd magnetic sensing module of Z axis magnetic sensing element; Described 4th magnetic conduction subelement and the 4th inductor unit matching; As the 4th magnetic sensing module of Z axis magnetic sensing element.
Magnetic sensing device shown in Figure 21 adopts wheatstone bridge configuration, can measure external magnetic field more delicately.In the application of reality, also can adopt a magnetic conduction subelement and an inductor unit, namely can measure magnetic field, not repeat them here.
It is pointed out that in the present embodiment, in order to often pair of magnetic sensing module directly can be offset in X-direction or/and field signal in Y direction exports, need three of two magnetic sensing modules key elements to be done setting and arrange.
Three key elements of often pair of two magnetic sensing modules matched comprise as follows:
(1) relative position of groove and sensing unit; Groove is arranged on the side of corresponding sensing unit, or opposite side; Magnetic conduction unit is positioned on the left of sensing unit, and it is by the direction of third direction introduction by magnetic field to substrate surface, and magnetic conduction unit is positioned on the right side of sensing unit, and it is by third direction introduction by magnetic field another direction to substrate surface;
(2) the initial magnetization direction that obtains under exciting magnetic field outside of sensing unit; The initial magnetization direction that can arrange two magnetic sensing modules is identical or contrary;
(3) direction of current in magnetic sensing module; The direction of current of two magnetic sensing modules is arranged to identical or orthogonal.
In the three elements of often pair of two magnetic sensing modules matched, first key element is set on the contrary, and all the other two key elements are set to identical; Or be all set to contrary.Certainly, the present invention has a variety of distortion, and the present embodiment and subsequent embodiment only disclose wherein several typical scheme.
Preferably, often pair of two magnetic sensing modules matched be arranged in parallel mutually, and namely in two magnetic sensing modules matched, the initial magnetization direction of the flux material layer of sensing unit is identical or contrary, and two magnetic sensing module grooves move towards parallel or overlap.If two magnetic sensing modules not be arranged in parallel, then before comparison, first two magnetic sensing modules are rotated to parallel, then compare again.
Further, each magnetic sensing module be arranged in parallel mutually, and in the three elements of two the magnetic sensing modules be connected, first key element is set on the contrary, and two other key element is set to identical simultaneously; Or be all set to contrary.
Be described above the composition of magnetic sensing device of the present invention, the present invention is while the above-mentioned magnetic sensing device of announcement, and also disclose a kind of preparation method of magnetic sensing device, described preparation method comprises the preparation process of third direction magnetic sensing element, specifically comprises:
[step S1] as shown in figure 13, the substrate surface can with cmos circuit forms groove, and groove is insulation, if necessary can at groove and surface deposition one deck of substrate or the dielectric layer material of multilayer after groove is formed;
[step S2] deposits one deck or multilayer magnetic material described establishing in fluted substrate, and forming flux material layer, such as, is AMR material, GMR or TMR material.A part for flux material layer is positioned at upper surface of substrate, and another part is positioned at groove.Wherein, usually can continue on described flux material layer, continue one or more layers protective material of deposition, form one or more layers protects material layer.
[step S3] is graphical, generates the figure of Magnetic Sensor, forms the first flux material layer of sensing unit; Form magnetic conduction unit by the application of groove simultaneously, namely form the magnetic material array (other diaxon XY sensor is formed in patterned process simultaneously) of three-axis sensor on a single chip; Vertical view as shown in figure 14, meanwhile, defines isolated vias between magnetic conduction unit and sensing unit, and described magnetic conduction unit, the first flux material layer part are disconnected, part links together.The device architecture of the isolated vias formed, as shown in Figure 14 to Figure 16; Figure 15, Figure 16 are at the different cutaway cross-sectional view with or without isolated vias position in Figure 14.Isolated vias 40 is arranged at described magnetic conduction unit 30 near the side of each electrode, and isolated vias 40 is pressed close to corresponding electrode and arranged, and electrode and magnetic conduction unit 30 are separated by isolated vias 40 just.
The main part of described magnetic conduction unit is arranged in groove, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures; Sensing unit is arranged near groove, be connected with part between magnetic conduction unit, partly disconnect, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two.
Wherein, can the first flux material layer, the magnetic conduction unit of disposable formation sensing unit, and the isolated vias between the first flux material layer and magnetic conduction unit; Also several times, the first flux material layer of sensing unit, magnetic conduction unit can be formed respectively, and the isolated vias between the first flux material layer and magnetic conduction unit.
[step S4] can direct depositing metal layers on above-mentioned flux material layer, and carries out graphical.Also can first deposition of insulative material, as shown in Figure 17, Figure 18, fill insulating dielectric materials; In the position of isolated vias because be filled with the isolated vias that insulating dielectric materials becomes insulation, as shown in figure 18.
[step S5] opens insulating dielectric materials layer window, until expose flux material layer (or protective seam), the deposition of carrying out metal electrode subsequently, with graphical, forms the electrode layer of sensing unit;
[step S6] deposits dielectric materials layer, chemically mechanical polishing, manufacture through hole and electrode.
The manufacture of [step S7] peripheral circuit, the substrate of employing is the substrate with ASIC.
Embodiment two
The difference of the present embodiment and embodiment one is, in the present embodiment, the cross section of isolated vias can be other shapes (as arbitrary polygon, can also comprise irregular figure) such as trapezoidal, oval, and its size and dimension can regulate according to the demand of reality.
Wherein, the cross section of isolated vias be trapezoidal structure as shown in figure 12 (stereographic map as shown in Figure 24); The cross section of isolated vias be oval structure as shown in figure 25.Such as leg-of-mutton figure just repeats no more at this.
Embodiment three
The difference of the present embodiment and embodiment one is, in the present embodiment, one end of described isolated vias can between two electrodes, instead of base part, as shown in figure 19.
An isolated vias (as shown in Fig. 9, Figure 12, Figure 19) answered by an electrode pair, or an electrode pair should multiple isolated vias (as shown in figure 20).A corresponding electrode (as shown in Fig. 9, Figure 12, Figure 19) of isolated vias, or a corresponding multiple electrode of isolated vias.Each electrode is equipped with corresponding isolated vias, or partial electrode periphery does not arrange isolated vias.
Or in conjunction with the setting of the isolated vias shown in Figure 19 and Figure 20, play better electric current isolation effect.
Embodiment four
Refer to Figure 22, the difference of the present embodiment and embodiment one is, in the present embodiment, described third direction magnetic sensing element comprises the first magnetic sensing module 101, second magnetic sensing module 102, the 3rd magnetic sensing module 103, the 4th magnetic sensing module 104.Each magnetic sensing module be arranged in parallel, or center on the same line; Namely in each magnetic sensing module, the initial magnetization direction of the flux material layer of sensing unit is identical or contrary, and each magnetic sensing module groove move towards parallel or overlap.
The first end of described first magnetic sensing module 101, the first end ground connection of the second magnetic sensing module 102, second end of the first magnetic sensing module 101 connects the first end of the 4th magnetic sensing module 104, second end of the second magnetic sensing module 102 connects the first end of the 3rd magnetic sensing module 103, and the second end of the 3rd magnetic sensing module 103, the second end of the 4th magnetic sensing module 104 connect power supply; Voltage table (being namely that electric signal exports) is connected with between second end of the first magnetic sensing module 101, the second end of the second magnetic sensing module 102.The position of power supply, voltage table and ground connection can be other (position as ground connection and power supply is interchangeable, and the position of power supply and voltage table is interchangeable etc.), only illustrate here.
In described first magnetic sensing module 101, the groove of the various piece cooperation of sensing unit is arranged on the first side of this mating part of sensing unit; The flux material layer initial magnetization direction of sensing unit is A direction; Direction of current is B direction;
In described second magnetic sensing module 102, the groove of the various piece cooperation of sensing unit is arranged on the second side of this mating part of sensing unit; The flux material layer initial magnetization direction of sensing unit be with A side in the opposite direction; Direction of current is the direction vertical with B direction;
In described 3rd magnetic sensing module 103, the groove of the various piece cooperation of sensing unit is arranged on the first side of this mating part of sensing unit; The flux material layer initial magnetization direction of sensing unit is the direction identical with A direction; Direction of current is the direction parallel with B direction;
In described 4th magnetic sensing module 104, the groove of the various piece cooperation of sensing unit is arranged on the second side of this mating part of sensing unit; The flux material layer initial magnetization direction of sensing unit be with A side in the opposite direction; Direction of current is the direction vertical with B direction.
As can see from Figure 22, each magnetic sensing module be arranged in parallel mutually, two the magnetic sensing modules be connected are (as between magnetic sensing module 101 and magnetic sensing module 102, between magnetic sensing module 101 and magnetic sensing module 104) three elements in, have a key element to be set on the contrary, two key elements are set to identical simultaneously; Or three key elements are all set on the contrary.
Described magnetic conduction unit and sensing unit include flux material layer; The material of described flux material layer is magnetoresistance material, is anisotropic magnetic resistance (AMR) material, or is giant magnetoresistance (GMR) material, or is tunnel magnetoresistive TMR material; Feature is the conversion along with magnetic field, and the resistivity of material converts.The principle of Magnetic Sensor is anisotropic magnetic sensors A MR, also can is TMR and GMR.
Embodiment five
Preferably, described magnetic conduction unit comprises the first permeable section, second permeable section of the both sides being arranged at groove respectively; The main part of the first permeable section, the second permeable section is arranged in groove, and has part to expose groove to substrate surface; First permeable section and the second permeable section in order to collect the field signal of vertical direction, and export this field signal to sensing unit;
Described sensing unit is arranged on the both sides of groove, described substrate surface, cooperatively interacts with the first permeable section in described groove and the second permeable section; Described sensing unit is induction and the Magnetic Sensor of substrate surface parallel direction, in order to receive the magnetic signal from vertical direction that described magnetic conduction unit exports, and measures magnetic field intensity corresponding to vertical direction and magnetic direction according to this magnetic signal; Described vertical direction is the vertical direction of substrate surface.
Embodiment six
The present embodiment discloses a kind of manufacture method of Magnetic Sensor, specifically comprises the steps:
[step S1] as shown in figure 13, the substrate surface can with cmos circuit forms groove, and groove is insulation, if necessary can at groove and surface deposition one deck of substrate or the dielectric layer material of multilayer after groove is formed;
[step S2] deposits one deck or multilayer magnetic material described establishing in fluted substrate, and forming flux material layer, such as, is NiFe alloy material.Deposition TaN protective seam is continued in the top of NiFe material.
[step S3] is graphical, generates the figure of Magnetic Sensor, forms the first flux material layer of sensing unit; Form magnetic conduction unit by the application of groove simultaneously, namely form the magnetic material array (other diaxon XY sensor is formed in patterned process simultaneously) of three-axis sensor on a single chip; Vertical view as shown in figure 28, meanwhile, defines isolated vias between magnetic conduction unit and sensing unit, and described magnetic conduction unit, the first flux material layer part are disconnected, part links together.Be with the difference of previous embodiment, in the present embodiment, after etching for flux material layer, also have magnetic material or protective material to exist in the bottom of groove and sidewall, vertical view as shown in figure 28.In Figure 28, along there is no the projection in isolated vias direction as shown in figure 26, along having the projection in isolated vias direction then as shown in figure 27, visible, all remain with flux material layer at the sidewall of groove and bottom.
Above-mentioned graphical after; another kind of situation is: also have magnetic material or protective material to exist at two (or four) sidewalls of groove; but this magnetic material and protective material can be removed (when etching in the bottom of groove; the material of substrate surface and channel bottom is easily removed), so the material of sidewall only may be retained.
The main part of described magnetic conduction unit is arranged in groove, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures; Sensing unit is arranged near groove, be connected with part between magnetic conduction unit, partly disconnect, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two.
Wherein, can the first flux material layer, the magnetic conduction unit of disposable formation sensing unit, and the isolated vias between the first flux material layer and magnetic conduction unit; Also several times, the first flux material layer of sensing unit, magnetic conduction unit can be formed respectively, and the isolated vias between the first flux material layer and magnetic conduction unit.
[step S4] deposits insulating medium layer.
[step S5] adopts photoetching process, opens insulating dielectric materials layer window, until expose flux material layer (or protective seam), the deposition of carrying out metal electrode subsequently, with graphical, forms the electrode layer of sensing unit;
[step S6] deposits dielectric materials layer, chemically mechanical polishing, manufacture through hole and electrode.
In sum, magnetic sensing device that the present invention proposes and preparation method thereof, the isolated location of aligned transfer is there is between sensing unit and magnetic conduction unit, isolated location can reduce the ratio flowing to magnetic conduction cell current from sensing unit effectively, have significant effect for the OFF-SET reducing electric bridge, the Z axis magnetic signal of magnetic conduction unit collection simultaneously can be sent into sensing unit efficiently and test, and combination property has competitive power, and manufacturing process is simple, and cost is lower.
Here description of the invention and application is illustrative, not wants by scope restriction of the present invention in the above-described embodiments.Distortion and the change of embodiment disclosed are here possible, are known for the replacement of embodiment those those of ordinary skill in the art and the various parts of equivalence.Those skilled in the art are noted that when not departing from spirit of the present invention or essential characteristic, the present invention can in other forms, structure, layout, ratio, and to realize with other assembly, material and parts.When not departing from the scope of the invention and spirit, can other distortion be carried out here to disclosed embodiment and change.
Claims (17)
1. a magnetic sensing device, is characterized in that, described device comprises third direction magnetic sensing element, and this third direction magnetic sensing element comprises:
-substrate, its surface has groove;
-magnetic conduction unit, its main part is arranged in groove, and has part to expose groove to substrate surface, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures;
-sensing unit, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction measurement by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;
Described sensing unit comprises the first flux material layer, electrode layer, and described magnetic conduction unit, the first flux material layer part are disconnected by isolated location, and part links together; Described electrode layer comprises the some electrodes be arranged in parallel, and described magnetic conduction unit is provided with some isolated vias near the side of each electrode, and isolated vias is pressed close to corresponding electrode and arranged, and isolated vias is just by electrode and magnetic conduction cell mesh or separate completely;
Described magnetic sensing device also comprises the first Magnetic Sensor, the second Magnetic Sensor, respectively in order to respond to the first direction parallel with substrate surface, the magnetic signal of second direction; First direction, second direction are mutually vertical.
2. magnetic sensing device according to claim 1, is characterized in that: have insulating dielectric materials layer between the first flux material layer of sensing unit, electrode layer.
3. a magnetic sensing device, is characterized in that, described device comprises third direction magnetic sensing element, and this third direction magnetic sensing element comprises:
Substrate, its surface has groove;
Magnetic conduction unit, its main part is arranged in groove, and has part to expose groove to substrate surface, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures;
Sensing unit, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction measurement by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two; Described sensing unit comprises the first flux material layer, electrode layer, and described magnetic conduction unit, the first flux material layer part are disconnected by isolated location, and part links together.
4. magnetic sensing device according to claim 3, is characterized in that:
Described magnetic sensing device also comprises the first Magnetic Sensor, the second Magnetic Sensor, respectively in order to respond to the first direction parallel with substrate surface, the magnetic signal of second direction; First direction, second direction are mutually vertical.
5. magnetic sensing device according to claim 3, is characterized in that:
Described magnetic conduction unit comprises four magnetic conduction subelements, is respectively the first magnetic conduction subelement, the second magnetic conduction subelement, the 3rd magnetic conduction subelement, the 4th magnetic conduction subelement;
Described sensing unit comprises four inductor unit, is respectively the first inductor unit, the second inductor unit, the 3rd inductor unit, the 4th inductor unit;
Described first magnetic conduction subelement and the first inductor unit matching, as the first induction module of third direction magnetic sensing element;
Described second magnetic conduction subelement and the second inductor unit matching, as the second induction module of third direction magnetic sensing element;
Described 3rd magnetic conduction subelement and the 3rd inductor unit matching, as the 3rd induction module of third direction magnetic sensing element;
Described 4th magnetic conduction subelement and the 4th inductor unit matching; As the 4th induction module of third direction magnetic sensing element;
Above-mentioned each inductor unit comprises flux material layer, and the resistance of this magnetic material changes along with the direction of magnetic field intensity;
Described substrate is provided with row or some row grooves, and a row groove is made up of a long groove, or a row groove comprises some sub-trenches;
Each magnetic conduction subelement comprises some magnetic components, and the main part of each magnetic component is arranged in corresponding groove, and has part to be exposed to outside groove.
6. magnetic sensing device according to claim 3, is characterized in that:
Described magnetic conduction unit comprises the first permeable section, second permeable section of the both sides being arranged at groove respectively; The main part of the first permeable section, the second permeable section is arranged in groove, and has part to expose groove to substrate surface; First permeable section and the second permeable section in order to collect the field signal of vertical direction, and export this field signal to sensing unit;
Described sensing unit is arranged on the both sides of groove, described substrate surface, cooperatively interacts with the first permeable section in described groove and the second permeable section; Described sensing unit is induction and the Magnetic Sensor of substrate surface parallel direction, in order to receive the magnetic signal from vertical direction that described magnetic conduction unit exports, and measures magnetic field intensity corresponding to vertical direction and magnetic direction according to this magnetic signal; Described vertical direction is the vertical direction of substrate surface.
7. magnetic sensing device according to claim 3, is characterized in that:
Described electrode layer comprises the some electrodes be arranged in parallel, and described magnetic conduction unit is provided with some isolated vias near the side of each electrode, and isolated vias is pressed close to corresponding electrode and arranged, and isolated vias is just by electrode and magnetic conduction cell mesh or separate completely.
8. magnetic sensing device according to claim 3, is characterized in that:
Described electrode layer comprises the some electrodes be arranged in parallel, and described magnetic conduction unit is provided with some isolated vias near the side of each electrode;
One end of described isolated vias is arranged near electrode, or one end of isolated vias is between two electrodes;
An isolated vias answered by an electrode pair, or multiple isolated vias answered by an electrode pair; A corresponding electrode of isolated vias, or a corresponding multiple electrode of isolated vias; Each electrode is equipped with corresponding isolated vias, or partial electrode periphery does not arrange isolated vias.
9. magnetic sensing device according to claim 3, is characterized in that:
Insulating dielectric materials layer is had between first flux material layer of described sensing unit, electrode layer.
10. magnetic sensing device according to claim 3, is characterized in that:
Described substrate has peripheral circuit.
11. magnetic sensing devices according to claim 3, is characterized in that:
Described flux material layer comprises the protective layer material of one deck or multilayer.
12. magnetic sensing devices according to claim 7 or 8, is characterized in that:
Described isolated vias is rectangle or trapezoidal or triangle along the cross section of base plane.
The preparation method of 13. 1 kinds of magnetic sensing devices, is characterized in that, described preparation method comprises the preparation process of third direction magnetic sensing element, specifically comprises:
Step S1, form groove on the surface of the substrate;
Step S2, deposit magnetic material described establishing in fluted substrate, form flux material layer, a part for flux material layer is positioned at upper surface of substrate, and another part is positioned at groove;
Step S3, graphical, generate the figure of Magnetic Sensor, form the first flux material layer of sensing unit; Form isolated vias simultaneously, and form magnetic conduction unit by the application of groove; Described magnetic conduction unit, the first flux material layer disconnect because isolated vias exists part, and part links together;
The main part of described magnetic conduction unit is arranged in groove, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures; Sensing unit is arranged near groove, be connected with part between magnetic conduction unit, partly disconnect, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;
The deposition of step S5, metal electrode and graphical, forms the electrode layer of sensing unit;
Step S6, deposition insulating dielectric materials, manufacture through hole and electrode, namely form three-axis sensor on a single chip.
14. preparation methods according to claim 13, is characterized in that:
In described step S2, the substrate of employing is the substrate with circuit.
15. preparation methods according to claim 13, is characterized in that:
In described step S2, described flux material layer deposits one or more layers protective material, form one or more layers protects material layer.
16. preparation methods according to claim 13, is characterized in that:
In described step S3, the first flux material layer of disposable formation sensing unit, magnetic conduction unit, and the isolated vias between the first flux material layer and magnetic conduction unit; Or several times, form the first flux material layer of sensing unit, magnetic conduction unit respectively, and the isolated vias between the first flux material layer and magnetic conduction unit.
17. preparation methods according to claim 13, is characterized in that:
Also step S4 is comprised: fill insulating dielectric materials, open hole between described step S3 and step S5.
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