CN104793155A - Magnetic sensor and preparation technology thereof - Google Patents
Magnetic sensor and preparation technology thereof Download PDFInfo
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- CN104793155A CN104793155A CN201410027191.0A CN201410027191A CN104793155A CN 104793155 A CN104793155 A CN 104793155A CN 201410027191 A CN201410027191 A CN 201410027191A CN 104793155 A CN104793155 A CN 104793155A
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Abstract
The invention discloses a magnetic sensor and a preparation technology thereof. The preparation technology comprises an insulated dielectric layer or/and a magnetic material layer or/and a metal layer is/are deposited on a substrate including a peripheral circuit, so that one or multiple metal layers of the peripheral circuit is/are used to realize self-detection or/and SET/RESET functions of the magnetic sensor, or serve as electrode metal of the magnetic sensor. According to the magnetic sensor and preparation technology thereof, one or multiple original metal layers of an ASIC can be used to realize functions of the metal layers of the magnetic sensor via device and circuit design and layout, the metal layers of the magnetic sensor are reduced from three to 2, and even to 0. The technical levels are greatly reduced, the technical period is shortened, the manufacture cost is reduced, and the competitive magnetic sensor with a single chip can be manufactured.
Description
Technical field
The invention belongs to semiconductor process techniques field, relate to a kind of magnetic sensing device, particularly relate to a kind of magnetic sensing device sharing its metal level with ASIC; Meanwhile, the invention still further relates to a kind of preparation technology of magnetic sensing device.
Background technology
Magnetic Sensor is according to its principle, following a few class can be divided into: Hall element, magnetodiode, anisotropic magnetoresistive element (AMR), tunnel junction magnetic resistance (TMR) element and giant magnetoresistance (GMR) element, inductive coil, superconductive quantum interference magnetometer etc.
Electronic compass is one of important applied field of Magnetic Sensor, along with the fast development of consumer electronics in recent years, except navigational system, increasing smart mobile phone and panel computer is also had also to start standard configuration electronic compass, bring very large application convenient to user, in recent years, the demand of Magnetic Sensor also starts from two axially three axle development.The Magnetic Sensor of diaxon, i.e. planar magnetic sensor, can be used for magnetic field intensity on measurement plane and direction, can representing by X and Y-axis both direction.
Below introduce the principle of work of existing Magnetic Sensor.Magnetic Sensor adopts anisotropic magnetoresistance (AnisotropicMagneto-Resistance) material to carry out the size of magnetic induction density in detection space.This alloy material magnetic field to external world with crystal structure is very sensitive, and the power change in magnetic field can cause AMR self-resistance value to change.
In manufacture, application process, be added on AMR unit by a high-intensity magnetic field and make it magnetize in one direction, set up a main magnetic domain, the axle vertical with main magnetic domain is called as the sensitive axes of this AMR, as shown in Figure 1.In order to make measurement result change in a linear fashion, the plain conductor on AMR material is 45° angle oblique arrangement, and electric current flows through from these wires and AMR material, as shown in Figure 2; The main magnetic domain set up on AMR material by initial high-intensity magnetic field and sense of current have the angle of 45 °.
When there is external magnetic field Ha, on AMR unit, main magnetic domain direction will change and be no longer initial direction, and so the angle theta of magnetic direction M and electric current I also can change, as shown in Figure 3.For AMR material, the change at θ angle can cause the change of AMR self resistance, as shown in Figure 4.
By the measurement changed AMR cell resistance, external magnetic field can be obtained.In the application of reality, in order to improve the sensitivity etc. of device, Magnetic Sensor can utilize Wheatstone bridge or half-bridge to detect the change of AMR resistance, as shown in Figure 5.R1/R2/R3/R4 is the AMR resistance that original state is identical, and in time external magnetic field being detected, R1/R2 resistance increases Δ R and R3/R4 reduces Δ R.Like this when not having external magnetic field, the output of electric bridge is zero; And when there being external magnetic field, the output of electric bridge is a small voltage Δ V.
Nowadays, usually need ASIC peripheral circuit to carry out driving and signal transacting in the application of Magnetic Sensor, current main employing asic chip and magnetic sensing chip carry out SIP encapsulation.And the single-chip pattern of SOC is developing direction, be characterized in that there is higher integrated level, better combination property and lower cost.SOC pattern continues to manufacture Magnetic Sensor above the top-level metallic of asic chip, finally makes Magnetic Sensor more organically be combined with ASIC, avoids and adopt lead-in wire method to connect.
When manufacture asic chip, 4-7 layer metal level usually can be adopted; And manufacture the metal that Magnetic Sensor also needs about 3 layers.Manufacturing Magnetic Sensor as continued on ASIC, will altogether have 7-11 layer; As can be seen here, adopt existing device architectures to prepare the Magnetic Sensor technological process of single-chip long, and then cause manufacturing cycle longer, and preparation cost is higher.
In view of this, nowadays in the urgent need to designing a kind of new magnetic sensing device, to overcome the above-mentioned defect of existing magnetic sensing device.
Summary of the invention
Technical matters to be solved by this invention is: provide a kind of magnetic sensing device, can drop to two-layer by the metal level of existing Magnetic Sensor from existing three layers, even 0 layer; Thus significantly simplify technological process, shorten the process time, reduce the cost of manufacture, and realize the single-chip manufacture of Magnetic Sensor.
In addition, the present invention also provides a kind of preparation technology of magnetic sensing device, can drop to two-layer by the metal level of existing Magnetic Sensor from existing three layers, even 0 layer; Thus significantly simplify technological process, shorten the process time, reduce the cost of manufacture, and realize the single-chip manufacture of Magnetic Sensor.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of magnetic sensing device, described magnetic sensing device comprises peripheral circuit, magnetic sensing element, one or more layers metal level wherein both for realizing the function of peripheral circuit, again for realizing the function of magnetic sensing element.
As a preferred embodiment of the present invention, described peripheral circuit comprises the metal level of multilayer; Described peripheral circuit one or more layers metal level wherein for realizing the Autonomous test of described magnetic sensing device or/and SET/RESET is or/and electrical connection function, or as the electrode metal of magnetic sensing device.
As a preferred embodiment of the present invention, described magnetic sensing device is diaxon magnetic sensing device; Magnetic sensing device comprises more metal layers, flux material layer, electrode layer, insulation course;
One or more layers in described more metal layers belongs to a part for peripheral circuit, and realizes the Autonomous test of described magnetic sensing device or/and SET/RESET is or/and electrical connection function, or as the electrode metal of magnetic sensing device; Described electrode layer is as a part for peripheral circuit, or electrode layer is not a part for peripheral circuit.
As a preferred embodiment of the present invention, described magnetic sensing device is diaxon magnetic sensing device;
Described peripheral circuit is arranged at the side of substrate, and the more metal layers of peripheral circuit comprises the first metal layer, the second metal level, and the first metal layer, the second metal level are kept apart by the first insulating medium layer of substrate;
Described first insulating medium layer is equipped with the second insulating medium layer, the second insulating medium layer is provided with flux material layer; Flux material layer comprises two groups of magnetic material cell, represents two axles respectively, the position of position corresponding second metal level of difference two groups of metal unit of two groups of magnetic material cell; Described magnetic material cell is provided with some metal electrodes be arranged in parallel;
Be equipped with the 3rd insulating medium layer above described flux material layer and metal electrode thereof, above the 3rd insulating medium layer, be provided with the 4th metal level;
Described second metal level is for realizing the Autonomous test of described magnetic sensing device or/and SET/RESET is or/and electrical connection function, and correspondence, described 4th metal level is for realizing the SET/RESET of magnetic sensing device or/and Autonomous test is or/and electrical connection function.
As a preferred embodiment of the present invention, described magnetic sensing device is three axle magnetic sensing devices; Described three axle magnetic sensing devices comprise horizontal direction Magnetic Sensor, vertical direction Magnetic Sensor;
Described vertical direction Magnetic Sensor comprises the substrate containing peripheral circuit, and described peripheral circuit is arranged at the side of substrate, comprises the first metal layer, the second metal level, and the first metal layer, the second metal level are kept apart by the first insulating medium layer of substrate;
Described first insulating medium layer is equipped with the second insulating medium layer, and the surface of the second insulating medium layer has groove, and gash depth arrives the first insulation course, or more than the first insulation course; Described vertical direction Magnetic Sensor also comprises magnetic conduction unit, sensing unit;
The main part of described vertical direction Magnetic Sensor magnetic conduction unit is arranged in described groove, and has part to expose the surface of groove to the second insulating medium layer, in order to collect the field signal of vertical direction, and is exported by this field signal; Described magnetic conduction unit comprises main part and is arranged at the first flux material layer in described groove;
Described sensing unit is arranged on the surface of described second insulating medium layer, in order to receive the magnetic signal of vertical direction that described magnetic conduction unit exports, and measures vertical direction and magnetic field intensity corresponding to horizontal direction and magnetic direction according to this magnetic signal; Described sensing unit comprises second flux material layer on the surface being arranged at the second insulating medium layer, and is arranged at the some electrodes be arranged in parallel on this second flux material layer; In the vertical direction in Magnetic Sensor, described second flux material layer and the first flux material layer have gap, or the second flux material layer and the first flux material layer are connected as a single entity;
Described sensor also comprises the 3rd insulating medium layer, and the 3rd insulating medium layer is arranged on the second insulating medium layer, the first flux material layer, electrode, the second flux material layer, is filled up by groove simultaneously; The 4th metal level is provided with above described 3rd insulating medium layer;
In described second metal level, the 4th metal level, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET/RESET function, or the second metal level, the 4th metal level are also for electrical connection.
As a preferred embodiment of the present invention, described magnetic sensing device is diaxon magnetic sensing device;
Described peripheral circuit is arranged at the side of substrate, comprises the first metal layer, the second metal level, and the first metal layer, the second metal level are kept apart by the first insulating medium layer of substrate;
Described first insulating medium layer is equipped with the second insulating medium layer, the second insulating medium layer is provided with flux material layer; Flux material layer comprises two groups of magnetic material cell, the position of corresponding second metal level in position two groups of metal unit of two groups of magnetic material cell; Described magnetic material cell is provided with some metal electrodes be arranged in parallel;
The 3rd insulating medium layer is equipped with above described flux material layer and metal electrode thereof;
In described the first metal layer, the second metal level, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET/RESET function, or the first metal layer, the second metal level are also for electrical connection.
As a preferred embodiment of the present invention, described magnetic sensing device is diaxon magnetic sensing device;
Described peripheral circuit is arranged at the side of substrate, comprises the first metal layer, the second metal level, and the first metal layer, the second metal level are kept apart by the first insulating medium layer of substrate;
The surface of described second metal level is also formed with the second insulating medium layer, and the surface of this second insulating medium layer is also formed with the 3rd metal level; The surface of the second insulating medium layer and the 3rd metal level deposit flux material layer, and by patterning process, flux material layer forms two groups of magnetic material cell; 3rd metal level is as the electrode of two groups of magnetic material cell;
In described the first metal layer, the second metal level, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET/RESET function.
A preparation technology for magnetic sensing device, described preparation technology comprises:
Containing the substrate of peripheral circuit depositing insulating dielectric materials layer or/and flux material layer is or/and metal level, make one or more layers metal level of peripheral circuit for realizing the Autonomous test of described magnetic sensing device or/and SET/RESET is or/and electrical connection function, or as the electrode metal of magnetic sensing device.
As a preferred embodiment of the present invention, described preparation technology comprises the steps:
Step 101, depositing the second insulating medium layer containing in the substrate of peripheral circuit, the second insulating medium layer is individual layer or multilayer; Described peripheral circuit is arranged at the side of substrate, comprises the first metal layer, the second metal level, and the first metal layer, the second metal level are kept apart by the first insulating medium layer of substrate;
Step 102, on the second insulating medium layer, deposit magnetic material;
Step 103, carry out graphically to magnetic material, etching forms magnetic material pattern, as magnetic material cell layer; Magnetic material cell layer comprises two groups of magnetic material cell, the position of corresponding second metal level in position two groups of metal unit of two groups of magnetic material cell;
Step 104, deposition the 3rd metal material, and etch, magnetic material forms the 3rd metal level, as the electrode of magnetic material cell;
Step 105, continuation deposition the 3rd insulating dielectric materials, and carry out planarization;
Step 106, deposit the 4th metal material again, manufacture formation the 4th metal level; In described second metal level, the 4th metal level, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET/RESET function.
As a preferred embodiment of the present invention, in described step 104, the 5th insulating dielectric materials was first deposited before deposition the 3rd metal material, window is opened subsequently on the 5th insulating dielectric materials, deposit the 3rd metal material subsequently and carry out photoetching, form the 3rd metal level, as the electrode of magnetic material cell.
As a preferred embodiment of the present invention, described magnetic sensing device is three axle magnetic sensing devices; Described three axle magnetic sensing devices comprise horizontal direction Magnetic Sensor, vertical direction Magnetic Sensor; The described preparation method of preparation technology's horizontal direction Magnetic Sensor, the preparation method of vertical direction Magnetic Sensor;
The preparation method of described vertical direction Magnetic Sensor comprises the steps:
Step 201, depositing the second insulating medium layer containing in the substrate of peripheral circuit; Described peripheral circuit is arranged at the side of substrate, comprises the first metal layer, the second metal level, and the first metal layer, the second metal level are kept apart by the first insulating medium layer of substrate;
Step 202, in the second insulating medium layer or the first insulating medium layer, form groove, the degree of depth of groove reaches or more than the first insulation course;
Step 203, open deposition of magnetic material on fluted second insulating medium layer, form magnetic material layer;
Step 204, graphical to magnetic material layer, form the figure of magnet unit; The magnetic conduction unit of the described vertical direction Magnetic Sensor of concrete formation, and the second flux material layer of sensing unit; Described magnetic conduction unit comprises main part and is arranged at the first flux material layer in described groove; First flux material layer has part to expose the surface of groove to the second insulating medium layer, the field signal in order to collect vertical direction of magnetic conduction unit, and is exported by this field signal; Described second flux material layer and the first flux material layer have gap, or the second flux material layer and the first flux material layer are connected as a single entity, or the second flux material layer and the first flux material layer are connected as a single entity and but have some windows;
Step 205, deposition the 3rd metal material, and graphically, form the 3rd metal level, as the electrode of sensing unit; Thus form the sensing unit being arranged at the surface of described second insulating medium layer, in order to receive the magnetic signal of the vertical direction that described magnetic conduction unit exports, and measure magnetic field intensity corresponding to vertical direction and magnetic direction according to this magnetic signal; Described sensing unit comprises second flux material layer on the surface being arranged at the second insulating medium layer, and is arranged at the some electrodes be arranged in parallel on this second flux material layer;
Step 206, deposition the 3rd insulating dielectric materials, form the 3rd insulating medium layer, and adopt chemically mechanical polishing to carry out planarization;
Step 207, continuation deposition the 4th metal material, and carry out graphical and etching, obtain the 4th metal level; In described second metal level, the 4th metal level, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET/RESET function.
As a preferred embodiment of the present invention, described preparation technology comprises the steps:
Step 301, depositing the second insulating medium layer containing in the substrate of peripheral circuit, the second insulating medium layer is individual layer or multilayer; Described peripheral circuit is arranged at the side of substrate, comprises the first metal layer, the second metal level, and the first metal layer, the second metal level are kept apart by suprabasil first insulating medium layer;
Step 302, on the second insulating medium layer, deposit magnetic material;
Step 303, carry out graphically to magnetic material, etching forms magnetic material pattern, as magnetic material cell layer; Magnetic material cell layer comprises two groups of magnetic material cell, the position of corresponding second metal level in position two groups of metal unit of two groups of magnetic material cell;
Step 304, deposition the 3rd metal material, and etch, magnetic material forms the 3rd metal level, as the electrode of magnetic material cell;
Step 305, continuation deposition the 3rd insulating dielectric materials, and carry out planarization; In described the first metal layer, the second metal level, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET/RESET function.
As a preferred embodiment of the present invention, described preparation technology comprises the steps:
Step 401, containing in the substrate of peripheral circuit formed the 3rd metal level; Described peripheral circuit is arranged at the side of substrate, comprises the first metal layer, the second metal level, the first metal layer, the second metal level, the 3rd metal level by substrate first or/and the second insulating medium layer is kept apart;
Step 402, on the surface of the second insulating medium layer and the 3rd metal level, deposit magnetic material;
Step 403, carry out graphically to magnetic material, etching forms magnetic material pattern, as flux material layer; Flux material layer comprises two groups of magnetic material cell, and the 3rd metal level is as the electrode of two groups of magnetic material cell;
Step 404, deposit passivation layer are protected; In described the first metal layer, the second metal level, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET/RESET function.
Beneficial effect of the present invention is: the magnetic sensing device that the present invention proposes and preparation technology thereof, by device, circuit design and laying out pattern, the original one deck of ASIC or multiple layer metal can be utilized to realize the metal level function of Magnetic Sensor, thus realize the effect reducing Magnetic Sensor metal level, such as can the metal level of Magnetic Sensor be dropped to two-layer from existing three layers, even 0 layer.Thus significantly decrease technique level, be conducive to shortening process cycle, reduce manufacturing cost, and realize competitive Magnetic Sensor single-chip manufacturing process.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the magnetic material of existing magnetic sensing device.
Fig. 2 is the existing magnetic material of magnetic sensing device and the structural representation of wire.
Fig. 3 is the angle schematic diagram of magnetic direction and direction of current.
Fig. 4 is the θ-R family curve schematic diagram of magnetic material.
Fig. 5 is the connection layout of Wheatstone bridge.
Fig. 6 is the structural representation of the substrate being provided with peripheral circuit in embodiment one.
Fig. 7 is the vertical view of the substrate being provided with peripheral circuit in embodiment one.
Fig. 8 is the schematic diagram in embodiment one after step 101.
Fig. 9 is the schematic diagram in embodiment one after step 102.
Figure 10 is the schematic diagram in embodiment one after step 103.
Figure 11 is the vertical view in embodiment one after step 103.
Figure 12 is the schematic diagram in embodiment one after step 104.
Figure 13 is the vertical view in embodiment one after step 104.
Figure 14 is that in embodiment one, step 104 deposits the schematic diagram after the 5th insulating dielectric materials.
Figure 15 is that in embodiment one, step 104 opens the schematic diagram after window.
Figure 16 is the schematic diagram in embodiment one after step 105.
Figure 17 is the schematic diagram in embodiment one after step 106.
Figure 18 is the structural representation of the substrate being provided with peripheral circuit in embodiment two.
Figure 19 is the schematic diagram in embodiment two after step 201.
Figure 20 is the schematic diagram in embodiment two after step 202.
Figure 21 is the schematic diagram in embodiment two after step 203.
Figure 22 is the schematic diagram in embodiment two after step 204.
Figure 23 is the schematic diagram of another kind of structure after step 204 in embodiment two.
Figure 24 is the schematic diagram in embodiment two after step 205.
Figure 25 is the schematic diagram in embodiment two after step 206.
Figure 26 is the schematic diagram in embodiment two after step 207.
Figure 27 is the structural representation of magnetic sensing device in embodiment three.
Figure 28 is the structural representation of the substrate being provided with peripheral circuit in embodiment four.
Figure 29 is the schematic diagram in embodiment four after step 401.
Figure 30 is the schematic diagram in embodiment four after step 402.
Figure 31 is the schematic diagram in embodiment four after step 403.
Figure 32 is the schematic diagram in embodiment four after step 404.
Embodiment
The preferred embodiments of the present invention are described in detail below in conjunction with accompanying drawing.
Embodiment one
Present invention is disclosed a kind of magnetic sensing device, described magnetic sensing device comprises peripheral circuit, magnetic sensing element, one or more layers metal level wherein both for realizing the function of peripheral circuit, again for realizing the function of magnetic sensing element.Described peripheral circuit comprises the metal level of multilayer; Described peripheral circuit one or more layers metal level wherein for realizing the Autonomous test of described magnetic sensing device or/and SET/RESET is or/and electrical connection function, or as the electrode metal of magnetic sensing device.
In the present embodiment, described magnetic sensing device is diaxon magnetic sensing device; Magnetic sensing device comprises more metal layers, flux material layer, electrode layer.One or more layers in described more metal layers belongs to a part for peripheral circuit, and realizes the Autonomous test of described magnetic sensing device or/and SET/RESET is or/and electrical connection function, or as the electrode metal of magnetic sensing device; Described electrode layer is as a part for peripheral circuit, or electrode layer is not a part for peripheral circuit.
Particularly, refer to Figure 17, described magnetic sensing device is diaxon magnetic sensing device; Described peripheral circuit is arranged at the side of substrate, and in the more metal layers of peripheral circuit, comprise the first metal layer 103, second metal level 104, the first metal layer 103, second metal level 104 is kept apart by the first insulating medium layer 102 of substrate 101; Described second metal level 104 comprises two groups of metal unit.
Described first insulating medium layer 102 is equipped with the second insulating medium layer 105, the second insulating medium layer 105 is provided with flux material layer 107; Flux material layer 107 comprises two groups of magnetic material cell, the position of the position corresponding second metal level 104 liang group metal unit of two groups of magnetic material cell 107; Described magnetic material cell is provided with some metal electrodes (i.e. the 3rd metal level 110) be arranged in parallel.
Be equipped with above the 3rd insulating medium layer the 112, three insulating medium layer 112 above described flux material layer 107 and metal electrode thereof and be provided with the 4th metal level 113; Described second metal level 104 is for realizing the Autonomous test of described magnetic sensing device or/and SET/RESET is or/and electrical connection function, and correspondence, described 4th metal level 113 is for realizing the SET/RESET of magnetic sensing device or/and self-checking function.
Be described above the structure of magnetic sensing device of the present invention, the present invention is while announcement said apparatus structure, also disclose a kind of preparation technology of magnetic sensing device, described preparation technology comprises: containing the substrate of peripheral circuit depositing insulating dielectric materials layer or/and flux material layer is or/and metal level, make one or more layers metal level of peripheral circuit for realizing the Autonomous test of described magnetic sensing device or/and SET/RESET is or/and electrical connection function, or as the electrode metal of magnetic sensing device.
Particularly, refer to Fig. 6 to Figure 17, described preparation technology comprises the steps:
[step 100] refers to Fig. 6, and described peripheral circuit is arranged at the side of substrate 101, comprises the first metal layer 103, second metal level 104, and the first metal layer 103, second metal level 104 is kept apart by the first insulating medium layer 102 of substrate 101; Vertical view is (being only local repressentation) as shown in Figure 7.First insulating medium layer 102 can comprise multilayer insulation dielectric layer.
[step 101] refers to Fig. 8, and it is individual layer or multilayer that the substrate 101 containing peripheral circuit deposits the second insulating medium layer 105, second insulating medium layer 105.
[step 102] refers to Fig. 9, and the second insulating medium layer 105 deposits flux material layer 106, and flux material layer 106 can also comprise protective layer material, and protective material is as tantalum nitride; Magnetic material is AMR material, or is TMR material, or is GMR material;
[step 103] refers to Figure 10, carries out graphically to magnetic material 106, and etching forms magnetic material pattern, as magnetic material cell layer 107; Flux material layer 107 comprises two groups of magnetic material cell, and the position of two groups of magnetic material cell can the position of corresponding second metal level two groups of metal unit; Vertical view as shown in figure 11.
[step 104] refers to Figure 12, deposition the 3rd metal material, and etches, and magnetic material forms the 3rd metal level 110, and as the electrode of magnetic material cell, vertical view as shown in Figure 13.The figure of electrode of display is shape, size, interval are all schematic, can adjust according to actual needs;
Refer to Figure 14, first can deposit the 5th insulating dielectric materials 108 before deposition the 3rd metal material, on the 5th insulating dielectric materials 108, open window 109 subsequently, as shown in figure 15; Deposit the 3rd metal material subsequently and carry out photoetching, forming the 3rd metal level 110, as the electrode of magnetic material cell.Effect is identical with such scheme.
[step 105] refers to Figure 16, continues deposition the 3rd insulating dielectric materials 112, and carries out planarization;
[step 106] refers to Figure 17, after opening through hole, then deposits the 4th metal material, manufactures formation the 4th metal level 113; In described second metal level 104, the 4th metal level 113, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET/RESET function.Certain second metal level 104, the 4th metal level 113 also can realize other function, such as electrical connection etc.
[step 107] the present embodiment can also comprise the deposition of passivation layer and window, and does not repeat them here.
In the present embodiment, the 4th metal level 113 can as the effect of Magnetic Sensor SET and RESET; And the magnetic field applied during the Autonomous test of device can be realized by the second metal level 104; Therefore on ASIC, manufacture Magnetic Sensor can the original metal level of sharing A SIC, both can manufacture layer of metal less, and reduce cost.Certainly, ASIC originally with metal level also can as SET and RESET, and other function.
Embodiment two
The difference of the present embodiment and embodiment one is, in the present embodiment, described magnetic sensing device is three axle magnetic sensing devices; Described three axle magnetic sensing devices comprise horizontal direction Magnetic Sensor (its structure can the description of reference example one, in this just no longer repeated description), vertical direction Magnetic Sensor.
Refer to Figure 26, described vertical direction Magnetic Sensor comprises the substrate containing peripheral circuit, described peripheral circuit is arranged at the side of substrate 201, comprise the first metal layer 203, second metal level 204, the first metal layer 203, second metal level 204 is kept apart by the first insulating medium layer 202 of substrate 201.
The surface described first insulating medium layer 202 being equipped with the second insulating medium layer 205, second insulating medium layer 205 has groove 206; Described vertical direction Magnetic Sensor also comprises magnetic conduction unit, sensing unit.
The main part of described magnetic conduction unit is arranged in described groove 206, and has part to expose the surface of groove to the second insulating medium layer 205, in order to collect the field signal of vertical direction, and is exported by this field signal; Described magnetic conduction unit comprises main part and is arranged at the first flux material layer in described groove.
Described sensing unit is arranged on the surface of described second insulating medium layer, in order to receive the magnetic signal of the vertical direction that described magnetic conduction unit exports, and measures magnetic field intensity corresponding to vertical direction and magnetic direction according to this magnetic signal; Described sensing unit comprises second flux material layer on the surface being arranged at the second insulating medium layer, and is arranged at the some electrodes be arranged in parallel on this second flux material layer; Described second flux material layer and the first flux material layer have gap, or the second flux material layer and the first flux material layer are connected as a single entity.
Described vertical direction Magnetic Sensor also comprises the 3rd insulating medium layer the 211, three insulating medium layer 211 and is arranged on the second insulating medium layer 205, first flux material layer, electrode (i.e. the 3rd metal level 210), the second flux material layer, is filled up by groove simultaneously; The 4th metal level 212 is provided with above described 3rd insulating medium layer 211.
In described second metal level 204, the 4th metal level 212, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET, RESET function.
In the present embodiment, the preparation method of the preparation method of the described preparation technology's horizontal direction Magnetic Sensor description of reference example one (specifically can), vertical direction Magnetic Sensor; Refer to Figure 18 to Figure 26, the preparation method of described vertical direction Magnetic Sensor comprises the steps:
[step 201] refers to Figure 19, and the substrate 201 containing peripheral circuit deposits the second insulating medium layer 205.
As shown in figure 18, described peripheral circuit is arranged at the side of substrate 201, comprises the first metal layer 203, second metal level 204, and the first metal layer 203, second metal level 204 is kept apart by the first insulating medium layer 202 of substrate 201;
[step 202] refers to Figure 20, in the second insulating medium layer 205, form groove 206; The degree of depth of groove 206 lower than the second insulating medium layer 205, namely can touch the first insulating medium layer 202 or substrate 201;
[step 203] refers to Figure 21, containing deposition of magnetic material on the second insulating medium layer 205 of groove 206, forms magnetic material layer 207; Flux material layer 207 can comprise the protects material layer of one deck or multilayer;
[step 204] refers to Figure 22, graphical to magnetic material layer, and form magnetic material figure, only remain sensing unit and magnetic conduction unit, sensing unit of the present invention can separate with magnetic conduction unit and also can be connected, and present invention show the case linked together.208 is eliminate the white space that magnetic material exposes.
The magnetic conduction unit of the described vertical direction Magnetic Sensor of concrete formation, and the second flux material layer of sensing unit; Described magnetic conduction unit comprises main part and is arranged at the first flux material layer in described groove; First flux material layer has part to expose the surface of groove to the second insulating medium layer, the field signal in order to collect vertical direction of magnetic conduction unit, and is exported by this field signal; Described second flux material layer and the first flux material layer have gap, or the second flux material layer and the first flux material layer are connected as a single entity.
Certainly, with the difference of Figure 22, the cross section structure of formation also as shown in figure 23, can be that the magnetic conduction unit of Z-direction separates with sensing unit by slit 209, and only retains magnetic material and the protective layer material of one side in groove.
[step 205] refers to Figure 24, deposition the 3rd metal material, and graphically, forms the 3rd metal level 210, as the electrode of sensing unit; Thus forming the sensing unit being arranged at the surface of described second insulating medium layer 205, sensing unit in order to receive the magnetic signal of the vertical direction of described magnetic conduction unit output, and measures magnetic field intensity corresponding to vertical direction and magnetic direction according to this magnetic signal; Described sensing unit comprises second flux material layer on the surface being arranged at the second insulating medium layer, and is arranged at the some electrodes be arranged in parallel on this second flux material layer.When etching the 3rd metal material, because the reason of technique, metal material may be remained with at the sidewall of groove (i.e. magnetic material) and bottom, only not illustrate out in fig. 24.
[step 206] refers to Figure 25, and deposition the 3rd insulating dielectric materials, forms the 3rd insulating medium layer 211, and adopt chemically mechanical polishing to carry out planarization;
[step 207] refers to Figure 26, opens through hole, is convenient to extraction electrode, continues deposition the 4th metal material subsequently, and carries out graphical and etching, obtains the 4th metal level 212; In described second metal level 204, the 4th metal level 212, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET/RESET function.
In the present embodiment, although show only the manufacture of Z-direction Magnetic Sensor, obviously can also comprise the sensing unit manufacture in X-Y direction simultaneously.4th metal level 212 can as the effect of Magnetic Sensor SET and RESET; And the magnetic field applied during the Autonomous test of device can be realized by the second metal level 204; Therefore on ASIC, manufacture Magnetic Sensor can the original metal level of sharing A SIC, both can manufacture layer of metal less, and reduce cost.
Embodiment three
The difference of the present embodiment and embodiment one is, utilize the double layer of metal of ASIC circuit, respectively as the Autonomous test of Magnetic Sensor and the metal level of SET/RESET, the metal level that two-layer Magnetic Sensor manufactures can be reduced, namely only need the metal increasing one deck namely can realize the function of chip.
Refer to Figure 27, in the present embodiment, described magnetic sensing device is diaxon magnetic sensing device; Described peripheral circuit is arranged at the side of substrate, comprises the first metal layer, the second metal level, and the first metal layer, the second metal level are kept apart by the first insulating medium layer of substrate.
Described first insulating medium layer is equipped with the second insulating medium layer, the second insulating medium layer is provided with flux material layer; Flux material layer comprises two row magnetic material cell, the position of the corresponding second metal level two row metal unit in position of two row magnetic material cell; Described magnetic material cell is provided with some metal electrodes be arranged in parallel.The 3rd insulating medium layer is equipped with above described flux material layer and metal electrode thereof.
In described the first metal layer, the second metal level, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET, RESET function.
Refer to Figure 27, in the present embodiment, described preparation technology comprises the steps:
[step 301] is depositing the second insulating medium layer containing in the substrate of peripheral circuit, and the second insulating medium layer is individual layer or multilayer; Described peripheral circuit is arranged at the side of substrate, comprises the first metal layer, the second metal level, and the first metal layer, the second metal level are kept apart by the first insulating medium layer of substrate, and the first insulating medium layer comprises multilayered medium layer;
[step 302] deposits magnetic material on the second insulating medium layer;
[step 303] carries out graphically to magnetic material, and etching forms magnetic material pattern, as flux material layer; Flux material layer comprises two groups of magnetic material cell, is respectively used to the measurement of magnetic field of X and Y-axis, the position of corresponding second metal level in position two groups of metal unit of two groups of magnetic material cell;
[step 304] deposition the 3rd metal material, and etch, magnetic material forms the 3rd metal level, as the electrode of magnetic material cell;
[step 305] continues deposition the 3rd insulating dielectric materials, and carries out planarization; In described the first metal layer, the second metal level, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET, RESET function.
Embodiment four
The difference of the present embodiment and embodiment one is, in the present embodiment, utilizes three-layer metal on ASIC to manufacture Magnetic Sensor, can reduce the metal level that three layers of Magnetic Sensor manufacture.
Refer to Figure 32, described magnetic sensing device is diaxon magnetic sensing device; Described peripheral circuit is arranged at the side of substrate, comprises the first metal layer, the second metal level, and the first metal layer, the second metal level are kept apart by the first insulating medium layer of substrate.
The surface of described first insulating medium layer is also formed with the 3rd metal level; The surface of the first insulating medium layer and the 3rd metal level deposit flux material layer, and flux material layer comprises two row magnetic material cell; 3rd metal level is as the electrode of two row magnetic material cell.
In described the first metal layer, the second metal level, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET, RESET function.
In the present embodiment, refer to Figure 28 to Figure 32, described preparation technology comprises the steps:
[step 401] refers to Figure 29, on the basis of Figure 28, the substrate 401 containing peripheral circuit forms the 3rd metal level 405, carries out planarization, expose the 3rd metal level 405 after metallization medium layer.
As shown in figure 28, described peripheral circuit is arranged at the side of substrate 401, comprises the first metal layer 403, second metal level 404, and the first metal layer 403, second metal level 404, the 3rd metal level 405 are kept apart by the first insulating medium layer 402 of substrate 401;
[step 402] refers to Figure 30, and the surface of the first insulating medium layer 402 and the 3rd metal level 405 deposit magnetic material 406, and magnetic material 406 comprises one deck or multi-protective layer material; Protective seam can in any side of flux material layer, or both sides;
[step 403] refers to Figure 31, carries out graphically to magnetic material 406, and etching forms magnetic material pattern, as flux material layer 407; In the present embodiment, flux material layer 407 comprises two row magnetic material cell, and the 3rd metal level 405 is as the electrode of two row magnetic material cell;
[step 404] refers to Figure 32, and deposit passivation layer 408 is protected, and opens PAD; In described the first metal layer 403, second metal level 404, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET, RESET function.
In sum, the magnetic sensing device that the present invention proposes and preparation technology thereof, by device, circuit design and laying out pattern, the original one deck of ASIC or multiple layer metal can be utilized to realize the metal level function of Magnetic Sensor, thus realize the effect reducing Magnetic Sensor metal level, such as can the metal level of Magnetic Sensor be dropped to two-layer from existing three layers, even 0 layer.Thus significantly decrease technique level, be conducive to shortening process cycle, reduce manufacturing cost, and realize competitive Magnetic Sensor single-chip manufacturing process.
Here description of the invention and application is illustrative, not wants by scope restriction of the present invention in the above-described embodiments.Distortion and the change of embodiment disclosed are here possible, are known for the replacement of embodiment those those of ordinary skill in the art and the various parts of equivalence.Those skilled in the art are noted that when not departing from spirit of the present invention or essential characteristic, the present invention can in other forms, structure, layout, ratio, and to realize with other assembly, material and parts.When not departing from the scope of the invention and spirit, can other distortion be carried out here to disclosed embodiment and change.
Claims (13)
1. a magnetic sensing device, is characterized in that, described magnetic sensing device comprises peripheral circuit, magnetic sensing element, one or more layers metal level wherein both for realizing the function of peripheral circuit, again for realizing the function of magnetic sensing element.
2. magnetic sensing device according to claim 1, is characterized in that:
Described peripheral circuit comprises the metal level of multilayer; Described peripheral circuit one or more layers metal level wherein for realizing the Autonomous test of described magnetic sensing device or/and SET/RESET is or/and electrical connection function, or as the electrode metal of magnetic sensing device.
3. magnetic sensing device according to claim 2, is characterized in that:
Described magnetic sensing device is diaxon magnetic sensing device; Magnetic sensing device comprises more metal layers, flux material layer, electrode layer, insulation course;
One or more layers in described more metal layers belongs to a part for peripheral circuit, and realizes the Autonomous test of described magnetic sensing device or/and SET/RESET is or/and electrical connection function, or as the electrode metal of magnetic sensing device; Described electrode layer is as a part for peripheral circuit, or electrode layer is not a part for peripheral circuit.
4. magnetic sensing device according to claim 2, is characterized in that:
Described magnetic sensing device is diaxon magnetic sensing device;
Described peripheral circuit is arranged at the side of substrate, and the more metal layers of peripheral circuit comprises the first metal layer, the second metal level, and the first metal layer, the second metal level are kept apart by the first insulating medium layer of substrate;
Described first insulating medium layer is equipped with the second insulating medium layer, the second insulating medium layer is provided with flux material layer; Flux material layer comprises two groups of magnetic material cell, represents two axles respectively, the position of position corresponding second metal level of difference two groups of metal unit of two groups of magnetic material cell; Described magnetic material cell is provided with some metal electrodes be arranged in parallel;
Be equipped with the 3rd insulating medium layer above described flux material layer and metal electrode thereof, above the 3rd insulating medium layer, be provided with the 4th metal level;
Described second metal level is for realizing the Autonomous test of described magnetic sensing device or/and SET/RESET is or/and electrical connection function, and correspondence, described 4th metal level is for realizing the SET/RESET of magnetic sensing device or/and Autonomous test is or/and electrical connection function.
5. magnetic sensing device according to claim 2, is characterized in that:
Described magnetic sensing device is three axle magnetic sensing devices; Described three axle magnetic sensing devices comprise horizontal direction Magnetic Sensor, vertical direction Magnetic Sensor;
Described vertical direction Magnetic Sensor comprises the substrate containing peripheral circuit, and described peripheral circuit is arranged at the side of substrate, comprises the first metal layer, the second metal level, and the first metal layer, the second metal level are kept apart by the first insulating medium layer of substrate;
Described first insulating medium layer is equipped with the second insulating medium layer, and the surface of the second insulating medium layer has groove, and gash depth arrives the first insulation course, or more than the first insulation course; Described vertical direction Magnetic Sensor also comprises magnetic conduction unit, sensing unit;
The main part of described vertical direction Magnetic Sensor magnetic conduction unit is arranged in described groove, and has part to expose the surface of groove to the second insulating medium layer, in order to collect the field signal of vertical direction, and is exported by this field signal; Described magnetic conduction unit comprises main part and is arranged at the first flux material layer in described groove;
Described sensing unit is arranged on the surface of described second insulating medium layer, in order to receive the magnetic signal of vertical direction that described magnetic conduction unit exports, and measures vertical direction and magnetic field intensity corresponding to horizontal direction and magnetic direction according to this magnetic signal; Described sensing unit comprises second flux material layer on the surface being arranged at the second insulating medium layer, and is arranged at the some electrodes be arranged in parallel on this second flux material layer; In the vertical direction in Magnetic Sensor, described second flux material layer and the first flux material layer have gap, or the second flux material layer and the first flux material layer are connected as a single entity;
Described sensor also comprises the 3rd insulating medium layer, and the 3rd insulating medium layer is arranged on the second insulating medium layer, the first flux material layer, electrode, the second flux material layer, is filled up by groove simultaneously; The 4th metal level is provided with above described 3rd insulating medium layer;
In described second metal level, the 4th metal level, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET/RESET function, or the second metal level, the 4th metal level are also for electrical connection.
6. magnetic sensing device according to claim 2, is characterized in that:
Described magnetic sensing device is diaxon magnetic sensing device;
Described peripheral circuit is arranged at the side of substrate, comprises the first metal layer, the second metal level, and the first metal layer, the second metal level are kept apart by the first insulating medium layer of substrate;
Described first insulating medium layer is equipped with the second insulating medium layer, the second insulating medium layer is provided with flux material layer; Flux material layer comprises two groups of magnetic material cell, the position of corresponding second metal level in position two groups of metal unit of two groups of magnetic material cell; Described magnetic material cell is provided with some metal electrodes be arranged in parallel;
The 3rd insulating medium layer is equipped with above described flux material layer and metal electrode thereof;
In described the first metal layer, the second metal level, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET/RESET function, or the first metal layer, the second metal level are also for electrical connection.
7. magnetic sensing device according to claim 2, is characterized in that:
Described magnetic sensing device is diaxon magnetic sensing device;
Described peripheral circuit is arranged at the side of substrate, comprises the first metal layer, the second metal level, and the first metal layer, the second metal level are kept apart by the first insulating medium layer of substrate;
The surface of described second metal level is also formed with the second insulating medium layer, and the surface of this second insulating medium layer is also formed with the 3rd metal level; The surface of the second insulating medium layer and the 3rd metal level deposit flux material layer, and by patterning process, flux material layer forms two groups of magnetic material cell; 3rd metal level is as the electrode of two groups of magnetic material cell;
In described the first metal layer, the second metal level, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET/RESET function.
8. a preparation technology for magnetic sensing device, is characterized in that, described preparation technology comprises:
Containing the substrate of peripheral circuit depositing insulating dielectric materials layer or/and flux material layer is or/and metal level, make one or more layers metal level of peripheral circuit for realizing the Autonomous test of described magnetic sensing device or/and SET/RESET is or/and electrical connection function, or as the electrode metal of magnetic sensing device.
9. preparation technology according to claim 8, is characterized in that:
Described preparation technology comprises the steps:
Step 101, depositing the second insulating medium layer containing in the substrate of peripheral circuit, the second insulating medium layer is individual layer or multilayer; Described peripheral circuit is arranged at the side of substrate, comprises the first metal layer, the second metal level, and the first metal layer, the second metal level are kept apart by the first insulating medium layer of substrate;
Step 102, on the second insulating medium layer, deposit magnetic material;
Step 103, carry out graphically to magnetic material, etching forms magnetic material pattern, as magnetic material cell layer; Magnetic material cell layer comprises two groups of magnetic material cell, the position of corresponding second metal level in position two groups of metal unit of two groups of magnetic material cell;
Step 104, deposition the 3rd metal material, and etch, magnetic material forms the 3rd metal level, as the electrode of magnetic material cell;
Step 105, continuation deposition the 3rd insulating dielectric materials, and carry out planarization;
Step 106, deposit the 4th metal material again, manufacture formation the 4th metal level; In described second metal level, the 4th metal level, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET/RESET function.
10. preparation technology according to claim 9, is characterized in that:
In described step 104, before deposition the 3rd metal material, first deposit the 5th insulating dielectric materials, on the 5th insulating dielectric materials, open window subsequently, deposit the 3rd metal material subsequently and carry out photoetching, form the 3rd metal level, as the electrode of magnetic material cell.
11. preparation technologies according to claim 8, is characterized in that:
Described magnetic sensing device is three axle magnetic sensing devices; Described three axle magnetic sensing devices comprise horizontal direction Magnetic Sensor, vertical direction Magnetic Sensor; The described preparation method of preparation technology's horizontal direction Magnetic Sensor, the preparation method of vertical direction Magnetic Sensor;
The preparation method of described vertical direction Magnetic Sensor comprises the steps:
Step 201, depositing the second insulating medium layer containing in the substrate of peripheral circuit; Described peripheral circuit is arranged at the side of substrate, comprises the first metal layer, the second metal level, and the first metal layer, the second metal level are kept apart by the first insulating medium layer of substrate;
Step 202, in the second insulating medium layer or the first insulating medium layer, form groove, the degree of depth of groove reaches or more than the first insulation course;
Step 203, open deposition of magnetic material on fluted second insulating medium layer, form magnetic material layer;
Step 204, graphical to magnetic material layer, form the figure of magnet unit; The magnetic conduction unit of the described vertical direction Magnetic Sensor of concrete formation, and the second flux material layer of sensing unit; Described magnetic conduction unit comprises main part and is arranged at the first flux material layer in described groove; First flux material layer has part to expose the surface of groove to the second insulating medium layer, the field signal in order to collect vertical direction of magnetic conduction unit, and is exported by this field signal; Described second flux material layer and the first flux material layer have gap, or the second flux material layer and the first flux material layer are connected as a single entity, or the second flux material layer and the first flux material layer are connected as a single entity and but have some windows;
Step 205, deposition the 3rd metal material, and graphically, form the 3rd metal level, as the electrode of sensing unit; Thus form the sensing unit being arranged at the surface of described second insulating medium layer, in order to receive the magnetic signal of the vertical direction that described magnetic conduction unit exports, and measure magnetic field intensity corresponding to vertical direction and magnetic direction according to this magnetic signal; Described sensing unit comprises second flux material layer on the surface being arranged at the second insulating medium layer, and is arranged at the some electrodes be arranged in parallel on this second flux material layer;
Step 206, deposition the 3rd insulating dielectric materials, form the 3rd insulating medium layer, and adopt chemically mechanical polishing to carry out planarization;
Step 207, continuation deposition the 4th metal material, and carry out graphical and etching, obtain the 4th metal level; In described second metal level, the 4th metal level, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET/RESET function.
12. preparation technologies according to claim 8, is characterized in that:
Described preparation technology comprises the steps:
Step 301, depositing the second insulating medium layer containing in the substrate of peripheral circuit, the second insulating medium layer is individual layer or multilayer; Described peripheral circuit is arranged at the side of substrate, comprises the first metal layer, the second metal level, and the first metal layer, the second metal level are kept apart by suprabasil first insulating medium layer;
Step 302, on the second insulating medium layer, deposit magnetic material;
Step 303, carry out graphically to magnetic material, etching forms magnetic material pattern, as magnetic material cell layer; Magnetic material cell layer comprises two groups of magnetic material cell, the position of corresponding second metal level in position two groups of metal unit of two groups of magnetic material cell;
Step 304, deposition the 3rd metal material, and etch, magnetic material forms the 3rd metal level, as the electrode of magnetic material cell;
Step 305, continuation deposition the 3rd insulating dielectric materials, and carry out planarization; In described the first metal layer, the second metal level, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET/RESET function.
13. preparation technologies according to claim 8, is characterized in that:
Described preparation technology comprises the steps:
Step 401, containing in the substrate of peripheral circuit formed the 3rd metal level; Described peripheral circuit is arranged at the side of substrate, comprises the first metal layer, the second metal level, the first metal layer, the second metal level, the 3rd metal level by substrate first or/and the second insulating medium layer is kept apart;
Step 402, on the surface of the second insulating medium layer and the 3rd metal level, deposit magnetic material;
Step 403, carry out graphically to magnetic material, etching forms magnetic material pattern, as flux material layer; Flux material layer comprises two groups of magnetic material cell, and the 3rd metal level is as the electrode of two groups of magnetic material cell;
Step 404, deposit passivation layer are protected; In described the first metal layer, the second metal level, one for realizing the self-checking function of described magnetic sensing device, another is for realizing SET/RESET function.
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