CN104793155B - A kind of preparation technology of magnetic sensing device and the device - Google Patents
A kind of preparation technology of magnetic sensing device and the device Download PDFInfo
- Publication number
- CN104793155B CN104793155B CN201410027191.0A CN201410027191A CN104793155B CN 104793155 B CN104793155 B CN 104793155B CN 201410027191 A CN201410027191 A CN 201410027191A CN 104793155 B CN104793155 B CN 104793155B
- Authority
- CN
- China
- Prior art keywords
- layer
- magnetic
- metal
- insulating medium
- sensing device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 301
- 229910052751 metal Inorganic materials 0.000 claims abstract description 301
- 239000000463 material Substances 0.000 claims abstract description 114
- 230000004907 flux Effects 0.000 claims abstract description 91
- 230000002093 peripheral effect Effects 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- 239000003989 dielectric material Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000012360 testing method Methods 0.000 claims abstract description 18
- 230000008569 process Effects 0.000 claims abstract description 11
- 239000000696 magnetic material Substances 0.000 claims description 117
- 239000007769 metal material Substances 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 6
- 238000013461 design Methods 0.000 abstract description 4
- 230000002860 competitive effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 325
- 238000010586 diagram Methods 0.000 description 23
- 230000008859 change Effects 0.000 description 10
- 230000006698 induction Effects 0.000 description 5
- 230000005381 magnetic domain Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
Present invention is disclosed a kind of magnetic sensing device and the preparation technology of the device, the preparation technology includes：Insulating dielectric materials layer or/and flux material layer or/and metal level are deposited in the substrate containing peripheral circuit, so that one or more layers metal level of peripheral circuit is used for the Autonomous test or/and SET/RESET functions for realizing the magnetic sensing device, or the electrode metal as magnetic sensing device.Magnetic sensing device and its preparation technology proposed by the present invention, pass through device, circuit design and laying out pattern, ASIC original one layer or multiple layer metal can be utilized to realize the metal layer function of Magnetic Sensor, so as to realize the effect for reducing Magnetic Sensor metal level, such as the metal level of Magnetic Sensor can be dropped to two layers from existing three layers, or even 0 layer.So as to which technique level be greatly reduced, be advantageous to shorten process cycle, reduce manufacturing cost, and realize competitive Magnetic Sensor single-chip manufacturing process.
Description
Technical field
The invention belongs to semiconductor process technique field, is related to a kind of magnetic sensing device, more particularly to one kind is total to ASIC
Enjoy the magnetic sensing device of its metal level；Meanwhile the invention further relates to a kind of preparation technology of magnetic sensing device.
Background technology
Magnetic Sensor can be divided into following a few classes according to its principle：Hall element, magnetodiode, anisotropic magnetic resistance
Element（AMR）, tunnel knot magnetic resistance (TMR) element and giant magnetoresistance (GMR) element, induction coil, superconductive quantum interference magnetometer etc..
Electronic compass is one of important applied field of Magnetic Sensor, with the fast development of consumer electronics in recent years, is removed
Outside navigation system, also increasing smart mobile phone and tablet personal computer also begin to standard configuration electronic compass, brought to user
Very big application facility, in recent years, the demand of Magnetic Sensor are also begun to from two axially three axles development.The Magnetic Sensor of two axles, i.e.,
Plane Magnetic Sensor, the magnetic field intensity in measurement plane and direction can be used for, can be represented with X and Y-axis both direction.
The operation principle of existing Magnetic Sensor introduced below.Magnetic Sensor uses anisotropic magnetoresistance
（Anisotropic Magneto-Resistance）Material detects the size of magnetic induction intensity in space.It is this that there is crystal
The alloy material of structure is very sensitive to the magnetic field in the external world, and the strong and weak change in magnetic field can cause AMR self-resistance values to change.
In manufacture, application process, a high-intensity magnetic field, which is added on AMR units, makes it magnetize in one direction, establishes
A main magnetic domain is played, the axle vertical with main magnetic domain is referred to as the sensitive axes of the AMR, as shown in Figure 1.In order that measurement result is with line
Property mode change, the plain conductor on AMR material is in 45° angle oblique arrangement, and electric current is upper from these wires and AMR material
Cross, as shown in Figure 2；The main magnetic domain and sense of current set up by initial high-intensity magnetic field on AMR material have 45 ° of folder
Angle.
When external magnetic field Ha be present, main magnetic domain direction will change and no longer be initial direction on AMR units,
So magnetic direction M and electric current I angle theta can also change, as shown in Figure 3.For AMR material, the change meeting at θ angles
Cause the change of AMR itself resistances, as shown in Figure 4.
By the measurement changed to AMR cell resistances, external magnetic field can be obtained.In the application of reality, in order to improve
Sensitivity of device etc., Magnetic Sensor can utilize the change of Wheatstone bridge or half-bridge detection AMR resistances, as shown in Figure 5.
R1/R2/R3/R4 is original state identical AMR resistance, when external magnetic field is detected, R1/R2 resistances increase Δ R and
R3/R4 reduces Δ R.So in the case of no external magnetic field, the output of electric bridge is zero；And when there is external magnetic field, electric bridge
Output be a small voltage Δ V.
Nowadays, it is generally necessary to which ASIC peripheral circuits are driven and signal transacting, currently mainly in the application of Magnetic Sensor
SIP encapsulation is carried out using asic chip and magnetic sensing chip.And SOC single tablet mode is developing direction, it is characterized in having
Higher integrated level, more preferable combination property and relatively low cost.SOC Mode is continued above the top-level metallic of asic chip
Magnetic Sensor is manufactured, Magnetic Sensor is more organically combined with ASIC, avoids and be attached using lead method.
When asic chip is manufactured, it will usually using 4-7 layer metal levels；And manufacture Magnetic Sensor and be also required to 3 layers of left side
Right metal.Such as continue to manufacture Magnetic Sensor on ASIC, 7-11 layers will be had altogether；As can be seen here, using existing device
The Magnetic Sensor technological process that framework prepares single-chip is long, and then causes manufacturing cycle longer, and it is higher to prepare cost.
In view of this, nowadays there is an urgent need to design a kind of new magnetic sensing device, to overcome the upper of existing magnetic sensing device
State defect.
The content of the invention
The technical problems to be solved by the invention are：A kind of magnetic sensing device is provided, can be by the metal of existing Magnetic Sensor
Layer drops to two layers from existing three layers, or even 0 layer；So as to significantly simplify technological process, the process time is shortened, is reduced
The cost of manufacture, and realize the single-chip manufacture of Magnetic Sensor.
In addition, the present invention a kind of preparation technology of magnetic sensing device is also provided, can by the metal level of existing Magnetic Sensor from
Existing three layers drop to two layers, or even 0 layer；So as to significantly simplify technological process, the process time is shortened, reduces manufacture
Cost, and realize Magnetic Sensor single-chip manufacture.
In order to solve the above technical problems, the present invention adopts the following technical scheme that：
A kind of magnetic sensing device, the magnetic sensing device include peripheral circuit, magnetic sensing element, it is therein one or more layers
Metal level be both used to realize the function of peripheral circuit, be used for the function of realizing magnetic sensing element again.
As a preferred embodiment of the present invention, the peripheral circuit includes the metal level of multilayer；The peripheral circuit its
In one or more layers metal level be used for realize the magnetic sensing device Autonomous test or/and SET/RESET or/and electrical connection work(
Can, or the electrode metal as magnetic sensing device.
As a preferred embodiment of the present invention, the magnetic sensing device is two axle magnetic sensing devices；Magnetic sensing device bag
Include more metal layers, flux material layer, electrode layer, insulating barrier；
One or more layers in the more metal layers belongs to a part for peripheral circuit, and realizes the magnetic sensing device
Autonomous test or/and SET/RESET or/and electrical connection function, or the electrode metal as magnetic sensing device；The electrode layer
As a part for peripheral circuit, or electrode layer is not a part for peripheral circuit.
As a preferred embodiment of the present invention, the magnetic sensing device is two axle magnetic sensing devices；
The peripheral circuit is arranged at the side of substrate, and the more metal layers of peripheral circuit include the first metal layer, second
Metal level, the first metal layer, second metal layer are kept apart by the first insulating medium layer of substrate；
The second insulating medium layer is equipped with first insulating medium layer, magnetic material is provided with the second insulating medium layer
Layer；Flux material layer includes two groups of magnetic material cells, represents two axles respectively, and the position of two groups of magnetic material cells corresponds to second respectively
The position of two groups of metal units of metal level；The magnetic material cell is provided with some metal electrodes be arrangeding in parallel；
The 3rd insulating medium layer is equipped with above the flux material layer and its metal electrode, is set above the 3rd insulating medium layer
There is the 4th metal level；
The second metal layer is used for Autonomous test or/and SET/RESET or/and the electrical connection for realizing the magnetic sensing device
Function, corresponding, the 4th metal level is used for SET/RESET or/and Autonomous test or/and the electrical connection for realizing magnetic sensing device
Function.
As a preferred embodiment of the present invention, the magnetic sensing device is three axle magnetic sensing devices；The three axles magnetic passes
Induction device includes horizontal direction Magnetic Sensor, vertical direction Magnetic Sensor；
The vertical direction Magnetic Sensor includes the substrate containing peripheral circuit, and the peripheral circuit is arranged at the one of substrate
Side, including the first metal layer, second metal layer, the first metal layer, second metal layer by the first insulating medium layer of substrate every
Leave；
The second insulating medium layer is equipped with first insulating medium layer, the surface of the second insulating medium layer is provided with ditch
Groove, gash depth reach the first insulating barrier, or more than the first insulating barrier；The vertical direction Magnetic Sensor also includes magnetic conduction list
Member, sensing unit；
The main part of the vertical direction Magnetic Sensor magnetic conduction unit is arranged in the groove, and has part to expose ditch
Groove to collect the magnetic field signal of vertical direction, and the magnetic field signal is exported to the surface of the second insulating medium layer；It is described to lead
Magnetic cell includes the first flux material layer that main part is arranged in the groove；
The sensing unit is arranged on the surface of second insulating medium layer, to receive the magnetic conduction unit output
Vertical direction magnetic signal, and both vertically and horizontally corresponding magnetic field intensity and magnetic field are measured according to the magnetic signal
Direction；The sensing unit includes the second flux material layer for being arranged at the surface of the second insulating medium layer, and be arranged at this
Some electrodes be arrangeding in parallel on two flux material layers；In vertical direction Magnetic Sensor, second flux material layer and first
Flux material layer has gap, or the second flux material layer is connected as a single entity with the first flux material layer；
The sensor also includes the 3rd insulating medium layer, and the 3rd insulating medium layer is arranged at the second insulating medium layer,
One flux material layer, electrode, on the second flux material layer, while groove is filled up；The 4th is provided with above 3rd insulating medium layer
Metal level；
In the second metal layer, the 4th metal level, a self-checking function for being used to realize the magnetic sensing device, separately
One is used to realize SET/RESET functions, or, second metal layer, the 4th metal level are additionally operable to electrically connect.
As a preferred embodiment of the present invention, the magnetic sensing device is two axle magnetic sensing devices；
The peripheral circuit is arranged at the side of substrate, including the first metal layer, second metal layer, the first metal layer,
Two metal levels are kept apart by the first insulating medium layer of substrate；
The second insulating medium layer is equipped with first insulating medium layer, magnetic material is provided with the second insulating medium layer
Layer；Flux material layer includes two groups of magnetic material cells, two groups of metal units of position correspondence second metal layer of two groups of magnetic material cells
Position；The magnetic material cell is provided with some metal electrodes be arrangeding in parallel；
The 3rd insulating medium layer is equipped with above the flux material layer and its metal electrode；
In the first metal layer, second metal layer, a self-checking function for being used to realize the magnetic sensing device, separately
One is used to realize SET/RESET functions, or, the first metal layer, second metal layer are additionally operable to electrically connect.
As a preferred embodiment of the present invention, the magnetic sensing device is two axle magnetic sensing devices；
The peripheral circuit is arranged at the side of substrate, including the first metal layer, second metal layer, the first metal layer,
Two metal levels are kept apart by the first insulating medium layer of substrate；
The surface of the second metal layer is also formed with the second insulating medium layer, the surface also shape of second insulating medium layer
The metal levels of Cheng You tri-；Deposition has flux material layer on the surface of the second insulating medium layer and the 3rd metal level, by graphical
Technique, flux material layer form two groups of magnetic material cells；Electrode of 3rd metal level as two groups of magnetic material cells；
In the first metal layer, second metal layer, a self-checking function for being used to realize the magnetic sensing device, separately
One is used to realize SET/RESET functions.
A kind of preparation technology of magnetic sensing device, the preparation technology include：
Insulating dielectric materials layer or/and flux material layer or/and metal level are deposited in the substrate containing peripheral circuit so that
One or more layers metal level of peripheral circuit is used for the Autonomous test or/and SET/RESET or/and electricity for realizing the magnetic sensing device
Linkage function, or the electrode metal as magnetic sensing device.
As a preferred embodiment of the present invention, the preparation technology comprises the following steps：
Step 101, the second insulating medium layer is deposited in the substrate containing peripheral circuit, the second insulating medium layer is individual layer
Or multilayer；The peripheral circuit is arranged at the side of substrate, including the first metal layer, second metal layer, the first metal layer,
Two metal levels are kept apart by the first insulating medium layer of substrate；
Step 102, magnetic material is deposited on the second insulating medium layer；
Step 103, magnetic material is patterned, etching forms magnetic material pattern, as magnetic material cell layer；Magnetic material
Elementary layer includes two groups of magnetic material cells, the position of two groups of metal units of position correspondence second metal layer of two groups of magnetic material cells
Put；
Step 104, the 3rd metal material of deposition, and etch, the 3rd metal level is formed on magnetic material, as magnetic bill of materials
The electrode of member；
Step 105, continue to deposit the 3rd insulating dielectric materials, and planarized；
Step 106, redeposited 4th metal material, manufacture form the 4th metal level；The second metal layer, the 4th metal
In layer, a self-checking function for being used to realize the magnetic sensing device, another is used to realize SET/RESET functions.
As a preferred embodiment of the present invention, in the step 104, is first deposited before the 3rd metal material is deposited
Five insulating dielectric materials, window then is opened on the 5th insulating dielectric materials, then deposit the 3rd metal material and carry out light
Carve, form the 3rd metal level, the electrode as magnetic material cell.
As a preferred embodiment of the present invention, the magnetic sensing device is three axle magnetic sensing devices；The three axles magnetic passes
Induction device includes horizontal direction Magnetic Sensor, vertical direction Magnetic Sensor；The system of the preparation technology horizontal direction Magnetic Sensor
The preparation method of Preparation Method, vertical direction Magnetic Sensor；
The preparation method of the vertical direction Magnetic Sensor comprises the following steps：
Step 201, the second insulating medium layer is deposited in the substrate containing peripheral circuit；The peripheral circuit is arranged at base
The side at bottom, including the first metal layer, second metal layer, the first metal layer, second metal layer are situated between by the first insulation of substrate
Matter layer is kept apart；
Step 202, form groove in the second insulating medium layer or the first insulating medium layer, the depth of groove reach or
More than the first insulating barrier；
Step 203, the deposition of magnetic material on fluted second insulating medium layer is opened, form magnetic material layer；
It is step 204, graphical to magnetic material layer, form the figure of magnet unit；Specifically form the vertical direction magnetic
The magnetic conduction unit of sensor, and the second flux material layer of sensing unit；The magnetic conduction unit is arranged at institute including main part
State the first flux material layer in groove；First flux material layer has part to expose groove to the surface of the second insulating medium layer, magnetic conduction
Unit to collect the magnetic field signal of vertical direction, and the magnetic field signal is exported；Second flux material layer and the first magnetic
Material layer has gap, and either the second flux material layer and the first flux material layer are connected as a single entity or the second flux material layer and the first magnetic
Material layer, which is connected as a single entity, is but provided with some windows；
Step 205, the 3rd metal material of deposition, and graphically, form the 3rd metal level, the electrode as sensing unit；
So as to form the sensing unit on the surface for being arranged at second insulating medium layer, to receive hanging down for the magnetic conduction unit output
Nogata to magnetic signal, and magnetic field intensity and magnetic direction according to corresponding to the magnetic signal measures vertical direction；The sensing
Unit includes the second flux material layer for being arranged at the surface of the second insulating medium layer, and is arranged on second flux material layer
Some electrodes be arrangeding in parallel；
Step 206, deposition the 3rd insulating dielectric materials, formed the 3rd insulating medium layer, and using chemically-mechanicapolish polish into
Row planarization；
Step 207, continue to deposit the 4th metal material, and be patterned and etch, obtain the 4th metal level；Described
In two metal levels, the 4th metal level, a self-checking function for being used to realize the magnetic sensing device, another is used to realize
SET/RESET functions.
As a preferred embodiment of the present invention, the preparation technology comprises the following steps：
Step 301, the second insulating medium layer is deposited in the substrate containing peripheral circuit, the second insulating medium layer is individual layer
Or multilayer；The peripheral circuit is arranged at the side of substrate, including the first metal layer, second metal layer, the first metal layer,
Two metal levels are kept apart by the first insulating medium layer in substrate；
Step 302, magnetic material is deposited on the second insulating medium layer；
Step 303, magnetic material is patterned, etching forms magnetic material pattern, as magnetic material cell layer；Magnetic material
Elementary layer includes two groups of magnetic material cells, the position of two groups of metal units of position correspondence second metal layer of two groups of magnetic material cells
Put；
Step 304, the 3rd metal material of deposition, and etch, the 3rd metal level is formed on magnetic material, as magnetic bill of materials
The electrode of member；
Step 305, continue to deposit the 3rd insulating dielectric materials, and planarized；The first metal layer, the second metal
In layer, a self-checking function for being used to realize the magnetic sensing device, another is used to realize SET/RESET functions.
As a preferred embodiment of the present invention, the preparation technology comprises the following steps：
Step 401, the 3rd metal level is formed in the substrate containing peripheral circuit；The peripheral circuit is arranged at substrate
Side, including the first metal layer, second metal layer, the first metal layer, second metal layer, the 3rd metal level pass through substrate first
Or/and second insulating medium layer keep apart；
Step 402, magnetic material is deposited on the surface of the second insulating medium layer and the 3rd metal level；
Step 403, magnetic material is patterned, etching forms magnetic material pattern, as flux material layer；Flux material layer bag
Include two groups of magnetic material cells, electrode of the 3rd metal level as two groups of magnetic material cells；
Step 404, deposit passivation layer are protected；In the first metal layer, second metal layer, one is used to realize institute
The self-checking function of magnetic sensing device is stated, another is used to realize SET/RESET functions.
The beneficial effects of the present invention are：Magnetic sensing device and its preparation technology proposed by the present invention, pass through device, circuit
Design and laying out pattern, ASIC original one layer or multiple layer metal can be utilized to realize the metal layer function of Magnetic Sensor, from
And the effect for reducing Magnetic Sensor metal level is realized, such as the metal level of Magnetic Sensor can be dropped to two from existing three layers
Layer, or even 0 layer.So as to which technique level be greatly reduced, be advantageous to shorten process cycle, reduce manufacturing cost, and realize have
The Magnetic Sensor single-chip manufacturing process of competitiveness.
Brief description of the drawings
Fig. 1 is the schematic diagram of the magnetic material of existing magnetic sensing device.
Fig. 2 is the magnetic material of existing magnetic sensing device and the structural representation of wire.
Fig. 3 is the angle schematic diagram of magnetic direction and the sense of current.
Fig. 4 is the θ-R characteristic curve schematic diagrames of magnetic material.
Fig. 5 is the connection figure of Wheatstone bridge.
Fig. 6 is the structural representation for the substrate that peripheral circuit is provided with embodiment one.
Fig. 7 is the top view for the substrate that peripheral circuit is provided with embodiment one.
Fig. 8 is the schematic diagram after step 101 in embodiment one.
Fig. 9 is the schematic diagram after step 102 in embodiment one.
Figure 10 is the schematic diagram after step 103 in embodiment one.
Figure 11 is the top view after step 103 in embodiment one.
Figure 12 is the schematic diagram after step 104 in embodiment one.
Figure 13 is the top view after step 104 in embodiment one.
Figure 14 is the schematic diagram that step 104 deposits after the 5th insulating dielectric materials in embodiment one.
Figure 15 is the schematic diagram that step 104 opens after window in embodiment one.
Figure 16 is the schematic diagram after step 105 in embodiment one.
Figure 17 is the schematic diagram after step 106 in embodiment one.
Figure 18 is the structural representation for the substrate that peripheral circuit is provided with embodiment two.
Figure 19 is the schematic diagram after step 201 in embodiment two.
Figure 20 is the schematic diagram after step 202 in embodiment two.
Figure 21 is the schematic diagram after step 203 in embodiment two.
Figure 22 is the schematic diagram after step 204 in embodiment two.
Figure 23 is the schematic diagram of another structure after step 204 in embodiment two.
Figure 24 is the schematic diagram after step 205 in embodiment two.
Figure 25 is the schematic diagram after step 206 in embodiment two.
Figure 26 is the schematic diagram after step 207 in embodiment two.
Figure 27 is the structural representation of magnetic sensing device in embodiment three.
Figure 28 is the structural representation for the substrate that peripheral circuit is provided with example IV.
Figure 29 is the schematic diagram after step 401 in example IV.
Figure 30 is the schematic diagram after step 402 in example IV.
Figure 31 is the schematic diagram after step 403 in example IV.
Figure 32 is the schematic diagram after step 404 in example IV.
Embodiment
The preferred embodiment that the invention will now be described in detail with reference to the accompanying drawings.
Embodiment one
Present invention is disclosed a kind of magnetic sensing device, the magnetic sensing device includes peripheral circuit, magnetic sensing element, wherein
One or more layers metal level be both used to realize the function of peripheral circuit, be used for the function of realizing magnetic sensing element again.It is described
Peripheral circuit includes the metal level of multilayer；The peripheral circuit one or more layers metal level therein is used to realize the magnetic sensing
The Autonomous test or/and SET/RESET or/and electrical connection function of device, or the electrode metal as magnetic sensing device.
In the present embodiment, the magnetic sensing device is two axle magnetic sensing devices；Magnetic sensing device includes more metal layers, magnetic
Material layer, electrode layer.One or more layers in the more metal layers belongs to a part for peripheral circuit, and realizes that the magnetic passes
The Autonomous test or/and SET/RESET or/and electrical connection function of induction device, or the electrode metal as magnetic sensing device；It is described
A part of the electrode layer as peripheral circuit, or electrode layer are not a part for peripheral circuit.
Specifically, Figure 17 is referred to, the magnetic sensing device is two axle magnetic sensing devices；The peripheral circuit is arranged at base
The side at bottom, in the more metal layers of peripheral circuit, including the first metal layer 103, second metal layer 104, the first metal layer
103rd, second metal layer 104 is kept apart by the first insulating medium layer 102 of substrate 101；The second metal layer 104 includes two
Group metal unit.
The second insulating medium layer 105 is equipped with first insulating medium layer 102, on the second insulating medium layer 105
Provided with flux material layer 107；Flux material layer 107 includes two groups of magnetic material cells, the position correspondence second of two groups of magnetic material cells 107
The position of 104 two groups of metal units of metal level；The magnetic material cell is provided with some metal electrodes be arrangeding in parallel（I.e. the 3rd
Metal level 110）.
The 3rd insulating medium layer 112, the 3rd insulating medium layer are equipped with above the flux material layer 107 and its metal electrode
112 tops are provided with the 4th metal level 113；The second metal layer 104 be used for realize the magnetic sensing device Autonomous test or/and
SET/RESET or/and electrical connection function, corresponding, the 4th metal level 113 is used for the SET/ for realizing magnetic sensing device
RESET or/and self-checking function.
The structure of magnetic sensing device of the present invention is described above, the present invention also takes off while said apparatus structure is disclosed
Show a kind of preparation technology of magnetic sensing device, the preparation technology includes：Deposition insulation is situated between in the substrate containing peripheral circuit
The material bed of material or/and flux material layer or/and metal level so that one or more layers metal level of peripheral circuit is used to realize the magnetic
The Autonomous test or/and SET/RESET or/and electrical connection function of sensing device, or the electrode metal as magnetic sensing device.
Specifically, Fig. 6 to Figure 17 is referred to, the preparation technology comprises the following steps：
【Step 100】Referring to Fig. 6, the peripheral circuit is arranged at the side of substrate 101, including the first metal layer 103,
Second metal layer 104, the first metal layer 103, second metal layer 104 are isolated by the first insulating medium layer 102 of substrate 101
Open；Top view is as shown in Figure 7（Only it is local display）.First insulating medium layer 102 can include multilayer insulation dielectric layer.
【Step 101】Referring to Fig. 8, the second insulating medium layer 105 is deposited in the substrate 101 containing peripheral circuit, the
Two insulating medium layers 105 are individual layer or multilayer.
【Step 102】Referring to Fig. 9, depositing flux material layer 106 on the second insulating medium layer 105, flux material layer 106 is also
Protective layer material, protection materials such as tantalum nitride can be included；Magnetic material is AMR material, or is TMR materials, or is GMR material；
【Step 103】Referring to Fig. 10, being patterned to magnetic material 106, etching forms magnetic material pattern, as magnetic material
Material unit layer 107；Flux material layer 107 includes two groups of magnetic material cells, and the position of two groups of magnetic material cells can correspond to the second gold medal
Belong to the position of two groups of metal unit of layer；Top view is as shown in figure 11.
【Step 104】Figure 12 is referred to, deposits the 3rd metal material, and is etched, the 3rd metal level is formed on magnetic material
110, as the electrode of magnetic material cell, top view is as shown in Figure 13.The figure of the electrode of display either shape, size,
Every being all schematical, can be adjusted according to being actually needed；
Figure 14 is referred to, the 5th insulating dielectric materials 108 can be first deposited before the 3rd metal material is deposited, then exist
Window 109 is opened on 5th insulating dielectric materials 108, as shown in figure 15；Then deposit the 3rd metal material and carry out photoetching, shape
Into the 3rd metal level 110, the electrode as magnetic material cell.Effect is identical with such scheme.
【Step 105】Figure 16 is referred to, continues to deposit the 3rd insulating dielectric materials 112, and planarized；
【Step 106】Figure 17 is referred to, after opening through hole, redeposited 4th metal material, manufacture forms the 4th metal level
113；In the second metal layer 104, the 4th metal level 113, a self-checking function for being used to realize the magnetic sensing device,
Another is used to realize SET/RESET functions.Certain second metal layer 104, the 4th metal level 113 can also realize other work(
Can, such as electrical connection etc..
【Step 107】The present embodiment can also include deposition and the windowing of passivation layer, will not be repeated here.
In the present embodiment, the 4th metal level 113 can be as Magnetic Sensor SET and RESET effect；And the self-test of device
The magnetic field applied during survey can be realized by second metal layer 104；Therefore ASIC can be shared by Magnetic Sensor being manufactured on ASIC
Original metal level, layer of metal can be both manufactured less, reduces cost.Certainly, the metal level that ASIC was carried originally can also
As SET and RESET, and other functions.
Embodiment two
The present embodiment and the difference of embodiment one are, in the present embodiment, the magnetic sensing device is three axle magnetic sensing dress
Put；The three axles magnetic sensing device includes horizontal direction Magnetic Sensor（Its structure refers to the description of embodiment one, herein just not
Repeat description）, vertical direction Magnetic Sensor.
Figure 26 is referred to, the vertical direction Magnetic Sensor includes the substrate containing peripheral circuit, and the peripheral circuit is set
It is placed in the side of substrate 201, including the first metal layer 203, second metal layer 204, the first metal layer 203, second metal layer 204
Kept apart by the first insulating medium layer 202 of substrate 201.
The second insulating medium layer 205, the table of the second insulating medium layer 205 are equipped with first insulating medium layer 202
Face is provided with groove 206；The vertical direction Magnetic Sensor also includes magnetic conduction unit, sensing unit.
The main part of the magnetic conduction unit is arranged in the groove 206, and has part to expose groove to the second insulation
The surface of dielectric layer 205, to collect the magnetic field signal of vertical direction, and the magnetic field signal is exported；The magnetic conduction unit bag
Include the first flux material layer that main part is arranged in the groove.
The sensing unit is arranged on the surface of second insulating medium layer, to receive the magnetic conduction unit output
Vertical direction magnetic signal, and magnetic field intensity and magnetic direction according to corresponding to the magnetic signal measures vertical direction；It is described
Sensing unit includes the second flux material layer for being arranged at the surface of the second insulating medium layer, and is arranged at second flux material layer
On some electrodes be arrangeding in parallel；Second flux material layer and the first flux material layer have gap, or the second flux material layer
It is connected as a single entity with the first flux material layer.
The vertical direction Magnetic Sensor also includes the 3rd insulating medium layer 211, and the 3rd insulating medium layer 211 is arranged at
Two insulating medium layers 205, the first flux material layer, electrode（That is the 3rd metal level 210）, on the second flux material layer, while by groove
Fill up；The top of 3rd insulating medium layer 211 is provided with the 4th metal level 212.
In the second metal layer 204, the 4th metal level 212, an Autonomous test for being used to realize the magnetic sensing device
Function, another is used to realize SET, RESET function.
In the present embodiment, the preparation method of the preparation technology horizontal direction Magnetic Sensor（Specifically refer to embodiment one
Description）, vertical direction Magnetic Sensor preparation method；Refer to Figure 18 to Figure 26, the system of the vertical direction Magnetic Sensor
Preparation Method comprises the following steps：
【Step 201】Figure 19 is referred to, the second insulating medium layer 205 is deposited in the substrate 201 containing peripheral circuit.
As shown in figure 18, the peripheral circuit is arranged at the side of substrate 201, including the first metal layer 203, the second metal
Layer 204, the first metal layer 203, second metal layer 204 are kept apart by the first insulating medium layer 202 of substrate 201；
【Step 202】Figure 20 is referred to, groove 206 is formed in the second insulating medium layer 205；The depth of groove 206 can
With less than the second insulating medium layer 205, you can to touch the first insulating medium layer 202 or substrate 201；
【Step 203】Figure 21 is referred to, the deposition of magnetic material on the second insulating medium layer 205 containing groove 206, shape
Into magnetic material layer 207；Flux material layer 207 can include the protected material bed of material of one layer or multilayer；
【Step 204】Figure 22 is referred to, it is graphical to magnetic material layer, magnetic material figure is formed, only remains sensing
Unit and magnetic conduction unit, sensing unit of the invention can be separated with magnetic conduction unit and can also be connected, and present invention show connection
Case together.208 be to eliminate the white space that magnetic material exposes.
Specifically form the magnetic conduction unit of the vertical direction Magnetic Sensor, and the second flux material layer of sensing unit；Institute
Stating magnetic conduction unit includes the first flux material layer that main part is arranged in the groove；First flux material layer has part to expose ditch
Groove to the surface of the second insulating medium layer, magnetic conduction unit to collect the magnetic field signal of vertical direction, and by the magnetic field signal
Output；Second flux material layer and the first flux material layer have gap, or the second flux material layer is linked as with the first flux material layer
One.
Certainly, the cross section structure of formation can also be as shown in figure 23, is to have slit 209 by Z axis side with Figure 22 difference
To magnetic conduction unit and sensing unit separate, and in groove only retain one side magnetic material and protective layer material.
【Step 205】Figure 24 is referred to, deposits the 3rd metal material, and graphically, forms the 3rd metal level 210, as
The electrode of sensing unit；So as to form the sensing unit on the surface for being arranged at second insulating medium layer 205, sensing unit is used
To receive the magnetic signal of the vertical direction of the magnetic conduction unit output, and the magnetic according to corresponding to the magnetic signal measures vertical direction
Field intensity and magnetic direction；The sensing unit includes the second flux material layer for being arranged at the surface of the second insulating medium layer, with
And it is arranged at some electrodes be arrangeding in parallel on second flux material layer.When three metal materials is etched, because work
The reason for skill, may be in groove（That is magnetic material）Side wall and bottom remain with metal material, do not have in fig. 24 only
Illustrate and.
【Step 206】Figure 25 is referred to, deposits the 3rd insulating dielectric materials, forms the 3rd insulating medium layer 211, and use
Chemically mechanical polishing is planarized；
【Step 207】Figure 26 is referred to, through hole is opened, is easy to extraction electrode, continues thereafter with the 4th metal material of deposition, and
It is patterned and etches, obtains the 4th metal level 212；In the second metal layer 204, the 4th metal level 212, one is used for
The self-checking function of the magnetic sensing device is realized, another is used to realize SET/RESET functions.
In the present embodiment, although show only the manufacture of Z-direction Magnetic Sensor, but it is clear that can also include simultaneously
The sensing unit manufacture in X-Y directions.4th metal level 212 can be as Magnetic Sensor SET and RESET effect；And device
The magnetic field applied during Autonomous test can be realized by second metal layer 204；Therefore Magnetic Sensor being manufactured on ASIC can share
The original metal levels of ASIC, layer of metal can be both manufactured less, reduces cost.
Embodiment three
The present embodiment and the difference of embodiment one are, using the double layer of metal of ASIC circuit, respectively as Magnetic Sensor
Autonomous test and SET/RESET metal level, it is possible to reduce the metal level of two layers Magnetic Sensor manufacture, i.e., only need one layer of increase
Metal be that can realize the function of chip.
Refer to Figure 27, in the present embodiment, the magnetic sensing device is two axle magnetic sensing devices；The peripheral circuit is set
In the side of substrate, including the first metal layer, second metal layer, the first metal layer, second metal layer are first exhausted by substrate
Edge dielectric layer is kept apart.
The second insulating medium layer is equipped with first insulating medium layer, magnetic material is provided with the second insulating medium layer
Layer；Flux material layer includes two row magnetic material cells, the row metal unit of position correspondence second metal layer two of two row magnetic material cells
Position；The magnetic material cell is provided with some metal electrodes be arrangeding in parallel.On the flux material layer and its metal electrode
Side is equipped with the 3rd insulating medium layer.
In the first metal layer, second metal layer, a self-checking function for being used to realize the magnetic sensing device, separately
One is used to realize SET, RESET function.
Refer to Figure 27, in the present embodiment, the preparation technology comprises the following steps：
【Step 301】The second insulating medium layer is deposited in the substrate containing peripheral circuit, the second insulating medium layer is single
Layer or multilayer；The peripheral circuit is arranged at the side of substrate, including the first metal layer, second metal layer, the first metal layer,
Second metal layer is kept apart by the first insulating medium layer of substrate, and the first insulating medium layer includes multilayer dielectricity layer；
【Step 302】Magnetic material is deposited on the second insulating medium layer；
【Step 303】Magnetic material is patterned, etching forms magnetic material pattern, as flux material layer；Flux material layer
Including two groups of magnetic material cells, X and the measurement of magnetic field of Y-axis, the metal of position correspondence second of two groups of magnetic material cells are respectively used to
The position of two groups of metal unit of layer；
【Step 304】The 3rd metal material is deposited, and is etched, the 3rd metal level is formed on magnetic material, as magnetic material
The electrode of unit；
【Step 305】Continue to deposit the 3rd insulating dielectric materials, and planarized；The first metal layer, the second gold medal
Belong in layer, a self-checking function for being used to realize the magnetic sensing device, another is used to realize SET, RESET function.
Example IV
The present embodiment and the difference of embodiment one are, in the present embodiment, utilize three-layer metal manufacture magnetic sensing on ASIC
Device, it is possible to reduce the metal level of three layers of Magnetic Sensor manufacture.
Figure 32 is referred to, the magnetic sensing device is two axle magnetic sensing devices；The peripheral circuit is arranged at the one of substrate
Side, including the first metal layer, second metal layer, the first metal layer, second metal layer by the first insulating medium layer of substrate every
Leave.
The surface of first insulating medium layer is also formed with the 3rd metal level；On the surface of the first insulating medium layer and
Deposition has flux material layer on three metal levels, and flux material layer includes two row magnetic material cells；3rd metal level is as two row magnetic materials
The electrode of unit.
In the first metal layer, second metal layer, a self-checking function for being used to realize the magnetic sensing device, separately
One is used to realize SET, RESET function.
In the present embodiment, Figure 28 to Figure 32 is referred to, the preparation technology comprises the following steps：
【Step 401】Figure 29 is referred to, on the basis of Figure 28, the 3rd is formed in the substrate 401 containing peripheral circuit
Metal level 405, planarized after metallization medium layer, expose the 3rd metal level 405.
As shown in figure 28, the peripheral circuit is arranged at the side of substrate 401, including the first metal layer 403, the second metal
Layer 404, the first insulating medium layer 402 that the first metal layer 403, second metal layer 404, the 3rd metal level 405 pass through substrate 401
Keep apart；
【Step 402】Figure 30 is referred to, magnetic is deposited on the surface of the first insulating medium layer 402 and the 3rd metal level 405
Material 406, magnetic material 406 include one layer or multi-protective layer material；Protective layer can in any side of flux material layer, or
Person both sides；
【Step 403】Figure 31 is referred to, magnetic material 406 is patterned, etching forms magnetic material pattern, as magnetic material
The bed of material 407；In the present embodiment, flux material layer 407 includes two row magnetic material cells, and the 3rd metal level 405 is used as two row magnetic materials
The electrode of unit；
【Step 404】Figure 32 is referred to, deposit passivation layer 408 is protected, and opens PAD；The first metal layer
403rd, in second metal layer 404, one is used to realize the self-checking function of the magnetic sensing device, another be used to realizing SET,
RESET functions.
In summary, magnetic sensing device and its preparation technology proposed by the present invention, device, circuit design and domain cloth are passed through
Office, ASIC original one layer or multiple layer metal can be utilized to realize the metal layer function of Magnetic Sensor, so as to realize reduction magnetic
The effect of sensor metal level, such as the metal level of Magnetic Sensor can be dropped to two layers from existing three layers, or even 0 layer.
So as to which technique level be greatly reduced, be advantageous to shorten process cycle, reduce manufacturing cost, and realize that competitive magnetic passes
Sensor single-chip manufacturing process.
Here description of the invention and application are illustrative, are not wishing to limit the scope of the invention to above-described embodiment
In.The deformation and change of embodiments disclosed herein are possible, real for those skilled in the art
The replacement and equivalent various parts for applying example are known.It should be appreciated by the person skilled in the art that the present invention is not being departed from
Spirit or essential characteristics in the case of, the present invention can in other forms, structure, arrangement, ratio, and with other components,
Material and part are realized.In the case where not departing from scope and spirit of the present invention, embodiments disclosed herein can be entered
The other deformations of row and change.
Claims (10)
1. a kind of magnetic sensing device, it is characterised in that the magnetic sensing device includes peripheral circuit, magnetic sensing element, therein
One or more layers metal level is both used for the function of realizing peripheral circuit, is used for the function of realizing magnetic sensing element again；
The peripheral circuit includes the metal level of multilayer；The peripheral circuit one or more layers metal level therein is used to realize institute
State the Autonomous test or/and SET/RESET or/and electrical connection function of magnetic sensing device, or the electrode gold as magnetic sensing device
Category；
The magnetic sensing device is two axle magnetic sensing devices；
The peripheral circuit is arranged at the side of substrate, and the more metal layers of peripheral circuit include the first metal layer, the second metal
Layer, the first metal layer, second metal layer are kept apart by the first insulating medium layer of substrate；
The second insulating medium layer is equipped with first insulating medium layer, flux material layer is provided with the second insulating medium layer；
Flux material layer includes two groups of magnetic material cells, represents two axles respectively, and the position of two groups of magnetic material cells corresponds to the second gold medal respectively
Belong to the position of two groups of metal unit of layer；The magnetic material cell is provided with some metal electrodes be arrangeding in parallel；
The 3rd insulating medium layer is equipped with above the flux material layer and its metal electrode, the is provided with above the 3rd insulating medium layer
Four metal levels；
The second metal layer is used for the Autonomous test for realizing the magnetic sensing device or/and SET/RESET or/and electrical connection work(
Can, corresponding, the 4th metal level is used for the SET/RESET for realizing magnetic sensing device or/and Autonomous test or/and electrical connection work(
Energy.
2. magnetic sensing device according to claim 1, it is characterised in that：
The magnetic sensing device is two axle magnetic sensing devices；Magnetic sensing device include more metal layers, flux material layer, electrode layer,
Insulating barrier；
One or more layers in the more metal layers belongs to a part for peripheral circuit, and realizes oneself of the magnetic sensing device
Detection or/and SET/RESET or/and electrical connection function, or the electrode metal as magnetic sensing device；The electrode layer conduct
A part for peripheral circuit, or electrode layer are not a part for peripheral circuit.
3. magnetic sensing device according to claim 1, it is characterised in that：
The magnetic sensing device is three axle magnetic sensing devices；The three axles magnetic sensing device includes horizontal direction Magnetic Sensor, hung down
Nogata is to Magnetic Sensor；
The vertical direction Magnetic Sensor includes the substrate containing peripheral circuit, and the peripheral circuit is arranged at the side of substrate,
Including the first metal layer, second metal layer, the first metal layer, second metal layer are isolated by the first insulating medium layer of substrate
Open；
The second insulating medium layer is equipped with first insulating medium layer, the surface of the second insulating medium layer is provided with groove, ditch
Groove depth reaches the first insulating barrier, or more than the first insulating barrier；The vertical direction Magnetic Sensor also includes magnetic conduction unit, sense
Answer unit；
The main part of the vertical direction Magnetic Sensor magnetic conduction unit is arranged in the groove, and has part to expose groove extremely
The surface of second insulating medium layer, to collect the magnetic field signal of vertical direction, and the magnetic field signal is exported；The magnetic conduction list
Member includes the first flux material layer that main part is arranged in the groove；
The sensing unit is arranged on the surface of second insulating medium layer, to receive hanging down for the magnetic conduction unit output
Nogata to magnetic signal, and both vertically and horizontally corresponding magnetic field intensity and magnetic field side are measured according to the magnetic signal
To；The sensing unit include be arranged at the second insulating medium layer surface the second flux material layer, and be arranged at this second
Some electrodes be arrangeding in parallel on flux material layer；In vertical direction Magnetic Sensor, second flux material layer and the first magnetic
Material layer has gap, or the second flux material layer is connected as a single entity with the first flux material layer；
The sensor also includes the 3rd insulating medium layer, and the 3rd insulating medium layer is arranged at the second insulating medium layer, the first magnetic
Material layer, electrode, on the second flux material layer, while groove is filled up；The 4th metal is provided with above 3rd insulating medium layer
Layer；
In the second metal layer, the 4th metal level, a self-checking function for being used to realize the magnetic sensing device, another
For realizing SET/RESET functions, or, second metal layer, the 4th metal level are additionally operable to electrically connect.
4. magnetic sensing device according to claim 1, it is characterised in that：
The magnetic sensing device is two axle magnetic sensing devices；
The peripheral circuit is arranged at the side of substrate, including the first metal layer, second metal layer, the first metal layer, the second gold medal
Category layer is kept apart by the first insulating medium layer of substrate；
The second insulating medium layer is equipped with first insulating medium layer, flux material layer is provided with the second insulating medium layer；
Flux material layer includes two groups of magnetic material cells, the position of two groups of metal units of position correspondence second metal layer of two groups of magnetic material cells
Put；The magnetic material cell is provided with some metal electrodes be arrangeding in parallel；
The 3rd insulating medium layer is equipped with above the flux material layer and its metal electrode；
In the first metal layer, second metal layer, a self-checking function for being used to realize the magnetic sensing device, another
For realizing SET/RESET functions, or, the first metal layer, second metal layer are additionally operable to electrically connect.
5. magnetic sensing device according to claim 1, it is characterised in that：
The magnetic sensing device is two axle magnetic sensing devices；
The peripheral circuit is arranged at the side of substrate, including the first metal layer, second metal layer, the first metal layer, the second gold medal
Category layer is kept apart by the first insulating medium layer of substrate；
The surface of the second metal layer is also formed with the second insulating medium layer, and the surface of second insulating medium layer is also formed with
3rd metal level；Deposition has flux material layer on the surface of the second insulating medium layer and the 3rd metal level, by patterning process,
Flux material layer forms two groups of magnetic material cells；Electrode of 3rd metal level as two groups of magnetic material cells；
In the first metal layer, second metal layer, a self-checking function for being used to realize the magnetic sensing device, another
For realizing SET/RESET functions.
6. a kind of preparation technology of magnetic sensing device, it is characterised in that the preparation technology includes：
Insulating dielectric materials layer or/and flux material layer or/and metal level are deposited in the substrate containing peripheral circuit so that periphery
One or more layers metal level of circuit is used for Autonomous test or/and SET/RESET or/and the electrical connection for realizing the magnetic sensing device
Function, or the electrode metal as magnetic sensing device；
The preparation technology comprises the following steps：
Step 101, deposit the second insulating medium layer in the substrate containing peripheral circuit, the second insulating medium layer be individual layer or
Multilayer；The peripheral circuit is arranged at the side of substrate, including the first metal layer, second metal layer, the first metal layer, the second gold medal
Category layer is kept apart by the first insulating medium layer of substrate；
Step 102, magnetic material is deposited on the second insulating medium layer；
Step 103, magnetic material is patterned, etching forms magnetic material pattern, as magnetic material cell layer；Magnetic material cell
Layer includes two groups of magnetic material cells, the position of two groups of metal units of position correspondence second metal layer of two groups of magnetic material cells；
Step 104, the 3rd metal material of deposition, and etch, the 3rd metal level is formed on magnetic material, as magnetic material cell
Electrode；
Step 105, continue to deposit the 3rd insulating dielectric materials, and planarized；
Step 106, redeposited 4th metal material, manufacture form the 4th metal level；The second metal layer, the 4th metal level
In, a self-checking function for being used to realize the magnetic sensing device, another is used to realize SET/RESET functions.
7. preparation technology according to claim 6, it is characterised in that：
In the step 104, the 5th insulating dielectric materials are first deposited before the 3rd metal material is deposited, then in the 5th insulation
Window is opened on dielectric material, the 3rd metal material is then deposited and carries out photoetching, the 3rd metal level is formed, as magnetic bill of materials
The electrode of member.
8. preparation technology according to claim 6, it is characterised in that：
The magnetic sensing device is three axle magnetic sensing devices；The three axles magnetic sensing device includes horizontal direction Magnetic Sensor, hung down
Nogata is to Magnetic Sensor；The preparation of the preparation method, vertical direction Magnetic Sensor of the preparation technology horizontal direction Magnetic Sensor
Method；
The preparation method of the vertical direction Magnetic Sensor comprises the following steps：
Step 201, the second insulating medium layer is deposited in the substrate containing peripheral circuit；The peripheral circuit is arranged at substrate
Side, including the first metal layer, second metal layer, the first insulating medium layer that the first metal layer, second metal layer pass through substrate
Keep apart；
Step 202, form groove in the second insulating medium layer or the first insulating medium layer, the depth of groove up to or over
First insulating barrier；
Step 203, the deposition of magnetic material on fluted second insulating medium layer is opened, form magnetic material layer；
It is step 204, graphical to magnetic material layer, form the figure of magnet unit；Specifically form the vertical direction magnetic sensing
The magnetic conduction unit of device, and the second flux material layer of sensing unit；The magnetic conduction unit is arranged at the ditch including main part
The first flux material layer in groove；First flux material layer has part to expose groove to the surface of the second insulating medium layer, magnetic conduction unit
To collect the magnetic field signal of vertical direction, and the magnetic field signal is exported；Second flux material layer and the first magnetic material
Layer has gap, and either the second flux material layer and the first flux material layer are connected as a single entity or the second flux material layer and the first magnetic material
Layer, which is connected as a single entity, is but provided with some windows；
Step 205, the 3rd metal material of deposition, and graphically, form the 3rd metal level, the electrode as sensing unit；So as to
The sensing unit on the surface for being arranged at second insulating medium layer is formed, to receive the Vertical Square of the magnetic conduction unit output
To magnetic signal, and magnetic field intensity and magnetic direction according to corresponding to the magnetic signal measures vertical direction；The sensing unit
Including second flux material layer on the surface for being arranged at the second insulating medium layer, and it is arranged at some on second flux material layer
The electrode be arrangeding in parallel；
Step 206, the 3rd insulating dielectric materials of deposition, the 3rd insulating medium layer is formed, and put down using chemically mechanical polishing
Smoothization；
Step 207, continue to deposit the 4th metal material, and be patterned and etch, obtain the 4th metal level；Second gold medal
Belong in layer, the 4th metal level, a self-checking function for being used to realize the magnetic sensing device, another is used to realize SET/
RESET functions.
9. preparation technology according to claim 6, it is characterised in that：
The preparation technology comprises the following steps：
Step 301, deposit the second insulating medium layer in the substrate containing peripheral circuit, the second insulating medium layer be individual layer or
Multilayer；The peripheral circuit is arranged at the side of substrate, including the first metal layer, second metal layer, the first metal layer, the second gold medal
Category layer is kept apart by the first insulating medium layer in substrate；
Step 302, magnetic material is deposited on the second insulating medium layer；
Step 303, magnetic material is patterned, etching forms magnetic material pattern, as magnetic material cell layer；Magnetic material cell
Layer includes two groups of magnetic material cells, the position of two groups of metal units of position correspondence second metal layer of two groups of magnetic material cells；
Step 304, the 3rd metal material of deposition, and etch, the 3rd metal level is formed on magnetic material, as magnetic material cell
Electrode；
Step 305, continue to deposit the 3rd insulating dielectric materials, and planarized；The first metal layer, second metal layer
In, a self-checking function for being used to realize the magnetic sensing device, another is used to realize SET/RESET functions.
10. preparation technology according to claim 6, it is characterised in that：
The preparation technology comprises the following steps：
Step 401, the 3rd metal level is formed in the substrate containing peripheral circuit；The peripheral circuit is arranged at the one of substrate
Side, including the first metal layer, second metal layer, the first metal layer, second metal layer, the 3rd metal level pass through substrate first
Or/and second insulating medium layer keep apart；
Step 402, magnetic material is deposited on the surface of the second insulating medium layer and the 3rd metal level；
Step 403, magnetic material is patterned, etching forms magnetic material pattern, as flux material layer；Flux material layer includes two
Group magnetic material cell, electrode of the 3rd metal level as two groups of magnetic material cells；
Step 404, deposit passivation layer are protected；In the first metal layer, second metal layer, one is used to realize the magnetic
The self-checking function of sensing device, another is used to realize SET/RESET functions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410027191.0A CN104793155B (en) | 2014-01-21 | 2014-01-21 | A kind of preparation technology of magnetic sensing device and the device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410027191.0A CN104793155B (en) | 2014-01-21 | 2014-01-21 | A kind of preparation technology of magnetic sensing device and the device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104793155A CN104793155A (en) | 2015-07-22 |
| CN104793155B true CN104793155B (en) | 2017-12-08 |
Family
ID=53558123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410027191.0A Active CN104793155B (en) | 2014-01-21 | 2014-01-21 | A kind of preparation technology of magnetic sensing device and the device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104793155B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105548920A (en) * | 2015-12-08 | 2016-05-04 | 苏州工业园区纳米产业技术研究院有限公司 | Self-resetting AMR sensor |
| TWI706142B (en) * | 2017-08-07 | 2020-10-01 | 聯華電子股份有限公司 | Eletrical test structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5247278A (en) * | 1991-11-26 | 1993-09-21 | Honeywell Inc. | Magnetic field sensing device |
| WO1997016736A3 (en) * | 1995-10-20 | 1997-07-10 | Cts Corp | A two axes linear position sensor |
| CN1356559A (en) * | 2001-11-13 | 2002-07-03 | 北京科大天宇微电子材料技术开发有限公司 | Tester with magnetic tunnel junction and magnetioelectric resistance material for 3D weak magnetic field |
| CN1503001A (en) * | 2002-10-23 | 2004-06-09 | ������������ʽ���� | Magnetic sensor and mfg method, magnet array adapted to said method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6536123B2 (en) * | 2000-10-16 | 2003-03-25 | Sensation, Inc. | Three-axis magnetic sensor, an omnidirectional magnetic sensor and an azimuth measuring method using the same |
-
2014
- 2014-01-21 CN CN201410027191.0A patent/CN104793155B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5247278A (en) * | 1991-11-26 | 1993-09-21 | Honeywell Inc. | Magnetic field sensing device |
| WO1997016736A3 (en) * | 1995-10-20 | 1997-07-10 | Cts Corp | A two axes linear position sensor |
| CN1356559A (en) * | 2001-11-13 | 2002-07-03 | 北京科大天宇微电子材料技术开发有限公司 | Tester with magnetic tunnel junction and magnetioelectric resistance material for 3D weak magnetic field |
| CN1503001A (en) * | 2002-10-23 | 2004-06-09 | ������������ʽ���� | Magnetic sensor and mfg method, magnet array adapted to said method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104793155A (en) | 2015-07-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104280700B (en) | A kind of single-chip difference free layer push-pull type magnetic field sensor electric bridge and preparation method | |
| CN103885005B (en) | Magnetic sensing device and its magnetic induction method | |
| CN103885004A (en) | Magnetic sensing device, and magnetic sensing method and manufacturing technology thereof | |
| CN103887428A (en) | Manufacturing technology of magnetic sensing device | |
| CN104793153B (en) | The preparation method of magnetic sensing device | |
| CN104122513A (en) | High-density magnetic sensor device and magnetic induction method and preparation process thereof | |
| CN104218147A (en) | Magnetic sensor preparation method and magnetic sensor | |
| CN104793155B (en) | A kind of preparation technology of magnetic sensing device and the device | |
| CN104122514B (en) | The preparation technology of magnetic sensing device | |
| CN104422905B (en) | Magnetic Sensor and its preparation process | |
| CN104155620B (en) | Magnetic sensing device and its inducing method, preparation technology | |
| CN103942872B (en) | Magnetic picture identification sensor chip in a kind of low fly height face | |
| CN103887427A (en) | Manufacturing technology of magnetic sensing device | |
| CN104459576B (en) | Magnetic sensing device and its magnetic strength induction method, the preparation technology of magnetic sensing device | |
| CN104459574B (en) | A kind of preparation technology of magnetic sensing device | |
| CN104515957B (en) | magnetic sensing device and preparation method thereof | |
| CN104914385A (en) | Magnetic sensing device and manufacturing method thereof | |
| CN104422908A (en) | Preparation process of magnetic sensation device | |
| CN104422907B (en) | A kind of magnetic sensing device and preparation method thereof | |
| CN104793156B (en) | The preparation method of magnetic sensing device | |
| CN104880678B (en) | A kind of magnetic sensing device and its preparation process | |
| CN203858698U (en) | Low-flying height in-plane magnetic image recognition sensor chip | |
| CN104422906A (en) | Magnetic sensor and preparation technology thereof | |
| CN104483638B (en) | Magnetic sensing device of Z-direction magnetic induction intensity and preparation method thereof can be improved | |
| CN104483637B (en) | Improve the Magnetic Sensor and its preparation process of triaxial induction ability |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: Room 307, 3rd floor, 1328 Dingxi Road, Changning District, Shanghai 200050 Patentee after: Shanghai Sirui Technology Co.,Ltd. Address before: 201815 No. 3157, building 3, No. 1368, Xingxian Road, Jiading District, Shanghai Patentee before: Shanghai Silicon Technology Co.,Ltd. |