CN104422908A - Preparation process of magnetic sensation device - Google Patents
Preparation process of magnetic sensation device Download PDFInfo
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- CN104422908A CN104422908A CN201310403912.9A CN201310403912A CN104422908A CN 104422908 A CN104422908 A CN 104422908A CN 201310403912 A CN201310403912 A CN 201310403912A CN 104422908 A CN104422908 A CN 104422908A
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Abstract
The invention discloses a preparation process of a magnetic sensation device. The device comprises a third direction magnetic sensation component, wherein the third direction magnetic sensation component comprises a substrate, a magnetic conductive unit and sensing units; a ditch is formed in the surface of the substrate; the main body part of the magnetic conductive unit is arranged in the ditch and is used for collecting a magnetic field signal in a third direction and outputting the magnetic field signal to the sensing units for measuring; each sensing unit is arranged on the surface of the substrate and is used for receiving a magnetic signal in the third direction output by the magnetic conductive unit and measuring magnetic field intensity and magnetic field direction corresponding to the third direction according to the magnetic signal; each sensing unit comprises a magnetic material layer and a metal electrode layer on the magnetic material layer; each sensing unit comprises two adjacent comb tooth-shaped electrodes; a magnetic conductive unit in one ditch is matched with the plurality of sensing units. Magnetic signals are provided to the comb tooth-shaped electrodes of over two sensing units through one magnetic conductive unit, and an obtained device has higher sensibility.
Description
Technical field
The invention belongs to semiconductor process techniques field, relate to a kind of sensing device, particularly relate to a kind of magnetic sensing device; Meanwhile, the invention still further relates to a kind of preparation technology of magnetic sensing device.
Background technology
Magnetic Sensor is according to its principle, following a few class can be divided into: Hall element, magnetodiode, anisotropic magnetoresistive element (AMR), tunnel junction magnetic resistance (TMR) element and giant magnetoresistance (GMR) element, inductive coil, superconductive quantum interference magnetometer etc.
Electronic compass is one of important applied field of Magnetic Sensor, along with the fast development of consumer electronics in recent years, except navigational system, increasing smart mobile phone and panel computer is also had also to start standard configuration electronic compass, bring very large application convenient to user, in recent years, the demand of Magnetic Sensor also starts from two axially three axle development.The Magnetic Sensor of diaxon, i.e. planar magnetic sensor, can be used for magnetic field intensity on measurement plane and direction, can representing by X and Y-axis both direction.
Below introduce the principle of work of existing Magnetic Sensor.Magnetic Sensor adopts anisotropic magnetoresistance (Anisotropic Magneto-Resistance) material to carry out the size of magnetic induction density in detection space.This alloy material magnetic field to external world with crystal structure is very sensitive, and the power change in magnetic field can cause AMR self-resistance value to change.
In manufacture, application process, be added on AMR unit by a high-intensity magnetic field and make it magnetize in one direction, set up a main magnetic domain, the axle vertical with main magnetic domain is called as the sensitive axes of this AMR, as shown in Figure 1.In order to make measurement result change in a linear fashion, the plain conductor on AMR material is 45° angle oblique arrangement, and electric current flows through from these wires and AMR material, as shown in Figure 2; The main magnetic domain set up on AMR material by initial high-intensity magnetic field and sense of current have the angle of 45 °.
When there is external magnetic field Ha, on AMR unit, main magnetic domain direction will change and be no longer initial direction, and so the angle theta of magnetic direction M and electric current I also can change, as shown in Figure 3.For AMR material, the change at θ angle can cause the change of AMR self resistance, as shown in Figure 4.
By the measurement changed AMR cell resistance, external magnetic field can be obtained.In the application of reality, in order to improve the sensitivity etc. of device, Magnetic Sensor can utilize Wheatstone bridge or half-bridge to detect the change of AMR resistance, as shown in Figure 5.R1/R2/R3/R4 is the AMR resistance that original state is identical, and in time external magnetic field being detected, R1/R2 resistance increases Δ R and R3/R4 reduces Δ R.Like this when not having external magnetic field, the output of electric bridge is zero; And when there being external magnetic field, the output of electric bridge is a small voltage Δ V.
Current three-axis sensor the magnetic sensing element of a plane (X, Y diaxon) sensing element and Z-direction is carried out system in package combine, to realize the function of three axle sensings; That is need plane sensing element and Z-direction magnetic sensing element to be arranged at respectively on two circle crystalline substances or chip, link together finally by encapsulation.At present, Dan Yuanjing/chip cannot realize simultaneously the manufacture of three-axis sensor.
In addition, the Autonomous test that common Z axis Magnetic Sensor realizes Z-direction has larger difficulty, and the magnetic signal output how realizing real Z-direction is a difficult problem.
In view of this, nowadays in the urgent need to designing a kind of preparation technology of new magnetic sensing device, to overcome the above-mentioned defect of existing technique.
Summary of the invention
Technical matters to be solved by this invention is: provide a kind of magnetic sensing device, can improve the sensitivity of induction.
In addition, the present invention also provides a kind of preparation technology of magnetic sensing device, and obtained magnetic sensing device has stronger sensitivity.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of magnetic sensing device, described device comprises third direction magnetic sensing element, and this third direction magnetic sensing element comprises:
Substrate, its surface has groove, and the length of groove is more than five times of width;
Magnetic conduction unit, its main part is arranged in groove, and has part to expose groove to substrate surface, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures;
Sensing unit, be arranged on described substrate surface, described sensing unit directly can measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and is directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two; Described sensing unit comprises magnetic material layer and is arranged at the metal electrode layer on magnetic material layer; Sensing unit comprises two adjacent comb-like electrodes, and the magnetic conduction unit being arranged in a groove matches with multiple sensing unit; The spacing of the comb-like electrode formed above inductive layer is less than the length of a magnetic conduction unit, and namely a magnetic conduction unit is at least the magnetic signal that two pairs of comb-like electrodes provide induction; Gap is had between sensing unit and magnetic conduction unit;
Insulation course unit, is arranged on the subregion on magnetic material layer, magnetic conduction unit and in groove;
Metal level unit, is arranged on the insulation course unit in groove, on insulation course when metal level unit is the metal electrode by etching sensing unit naturally in groove, thus is formed; Metal level unit, in order to realize Autonomous test effect, namely by applying electric current on self-monitoring metal, producing the magnetic field perpendicular to base plane, thus realizing Autonomous test.In self-monitoring process, the metal level unit two ends in groove apply electric current, and can produce the magnetic field being parallel to trenched side-wall on trenched side-wall, metal level unit two ends refer to two sidewalls being arranged at groove respectively; And sensing unit is sent into by magnetic conduction unit in this magnetic field, and then exporting field signal at the output port of sensing unit, by comparing this field signal and the relation applying electric current, playing the evaluation of Z axis Magnetic Sensor, self-monitoring effect.
A kind of magnetic sensing device, described device comprises third direction magnetic sensing element, and this third direction magnetic sensing element comprises:
Substrate, its surface has groove;
Magnetic conduction unit, its main part is arranged in groove, and has part to expose groove to substrate surface, in order to collect the field signal of third direction, and this magnetic signal is outputted to sensing unit measures;
Sensing unit, be arranged on described substrate surface, described sensing unit directly can measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and is directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two; Described sensing unit comprises magnetic material layer and is arranged at the metal electrode layer on magnetic material layer; Sensing unit comprises two adjacent comb-like electrodes, and the magnetic conduction unit being arranged in a groove matches with multiple sensing unit; Gap is had between sensing unit and magnetic conduction unit;
Insulation course unit, is realized by deposition of insulative material on magnetic conduction unit and groove.
As a preferred embodiment of the present invention, the gap between described sensing unit and magnetic conduction unit is between 0 to 1 micron; Preferably, the gap between described sensing unit and magnetic conduction unit is between 1 nanometer to 300 nanometers.
As a preferred embodiment of the present invention, described device also comprises metal level unit, be arranged on the insulation course unit in groove, in order to realize Autonomous test effect, namely by applying electric current on self-monitoring metal, produce the magnetic field perpendicular to base plane, thus realize Autonomous test, namely by applying electric current on self-monitoring metal, producing the magnetic field perpendicular to base plane, thus realizing Autonomous test.
As a preferred embodiment of the present invention, in self-monitoring process, the metal level unit two ends in groove apply electric current, and can produce the magnetic field being parallel to trenched side-wall on trenched side-wall, metal level unit two ends refer to two sidewalls being arranged at groove respectively; And this magnetic field is by the collection of magnetic conduction unit, feeding sensing unit, and then exporting field signal at the output port of sensing unit, by comparing this field signal and the relation applying electric current, playing the evaluation of Z axis Magnetic Sensor, self-monitoring effect.
As a preferred embodiment of the present invention, the length of described groove is more than five times of width.
As a preferred embodiment of the present invention, the spacing of the comb-like electrode formed above inductive layer is less than the length of a magnetic conduction unit, and namely a magnetic conduction unit is at least the magnetic signal that two pairs of comb-like electrodes provide induction.
A preparation technology for above-mentioned magnetic sensing device, described preparation technology comprises the steps:
Step S1, substrate is set;
Step S2, arrange groove on the surface of substrate, the length of groove is more than five times of width;
Step S3, substrate surface deposition sensing unit magnetic material layer, magnetic material layer can comprise protective seam, prepares magnetic conduction unit; The main part of magnetic conduction unit is deposited in groove, and has part to expose groove to substrate surface;
Step S4, deposition of insulative material, obtain insulation course, and open through hole;
Step S5, electrode layer is set;
Step S6, etching, form electrode layer; In groove, insulation course when metal electrode etching naturally in groove forms metal level, namely as Autonomous test metal level; The distance of the comb-like electrode formed above inductive layer is less than the length of magnetic conduction unit, and namely a magnetic conduction unit is at least the magnetic signal that two pairs of comb-like electrodes provide induction.
A preparation technology for above-mentioned magnetic sensing device, described preparation technology comprises the steps:
Step S1, substrate is set;
Step S2, groove is set on the surface of substrate;
Step S3, substrate surface deposition sensing unit magnetic material layer, magnetic material layer can comprise protective seam, prepares magnetic conduction unit; The main part of magnetic conduction unit is deposited in groove, and has part to expose groove to substrate surface;
Step S4, deposition of insulative material, obtain insulation course, and open through hole;
Step S5, electrode layer is set;
Step S6, etching, form electrode layer; Sensing unit comprises two adjacent comb-like electrodes, and the magnetic conduction unit being arranged in a groove matches with multiple sensing unit.
As a preferred embodiment of the present invention, the length of described groove is more than five times of width.
As a preferred embodiment of the present invention, in groove, insulation course when metal electrode etching naturally in groove forms metal level, namely as Autonomous test metal level; The distance of the comb-like electrode formed above inductive layer is less than the length of magnetic conduction unit, and namely a magnetic conduction unit is at least the magnetic signal that two pairs of comb-like electrodes provide induction.
As a preferred embodiment of the present invention, in step S6, photoresist in groove, during etching, is had to remain, protect.
Beneficial effect of the present invention is: the magnetic sensing device that the present invention proposes and preparation technology thereof, and give two to provide electric signal to the comb-like electrode of above sensing unit by a magnetic conductance unit, the device obtained has stronger sensitivity.In addition, while the present invention's comb-like electrode above manufacture sensing unit is right, remain the metal level in groove, this metal level is close to groove, electric signal is applied in groove direction, namely can obtain magnetic signal (i.e. Z-direction signal) in the direction being parallel to trenched side-wall, so realize the Autonomous test of Z axis.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the magnetic material of existing Magnetic Sensor.
Fig. 2 is the magnetic material of existing Magnetic Sensor and the structural representation of wire.
Fig. 3 is the angle schematic diagram of magnetic direction and direction of current.
Fig. 4 is the θ-R family curve schematic diagram of magnetic material.
Fig. 5 is the connection layout of Wheatstone bridge.
Fig. 6 is the part-structure schematic diagram of magnetic sensing device.
Fig. 7 is that the AA of Fig. 6 is to cut-open view.
Fig. 8 is the part-structure schematic diagram of magnetic sensing device in embodiment two.
Fig. 9 is that the BB of Fig. 7 is to cut-open view.
Figure 10 is the part-structure schematic diagram of a kind of real-time mode of magnetic sensing device in embodiment three.
Figure 11 is the part-structure schematic diagram of the another kind of real-time mode of magnetic sensing device in embodiment three.
Embodiment
The preferred embodiments of the present invention are described in detail below in conjunction with accompanying drawing.
Embodiment one
Refer to Fig. 6, present invention is disclosed a kind of magnetic sensing device, described device comprises third direction (as Z axis) magnetic sensing element, in order to respond to the field signal of third direction; This third direction magnetic sensing element comprises substrate 1, and the surface of substrate has groove 2, and the length of groove 2 is more than five times of width.
Be provided with magnetic conduction unit 3 in groove 2, the main part of magnetic conduction unit is arranged in groove 2, and has part to expose the surface of groove 2 to substrate 1, in order to collect the field signal of third direction, and this magnetic signal is outputted to sensing unit measures.
Sensing unit (comprising magnetic material layer 4, metal electrode layer 5) is arranged at described substrate 1 on the surface, described sensing unit directly can measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit 3 exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit 3; First direction, second direction, third direction are mutually vertical between two.Described sensing unit comprises magnetic material layer 4 and is arranged at the metal electrode layer 5 on magnetic material layer; Sensing unit comprises two adjacent comb-like electrodes, and the magnetic conduction unit 3 being arranged in a groove 2 matches with multiple sensing unit; The spacing of the comb-like electrode formed above inductive layer is less than the length of a magnetic conduction unit, and namely a magnetic conduction unit is at least the magnetic signal that two pairs of comb-like electrodes provide induction.
Gap is had between described sensing unit and magnetic conduction unit 3; Gap between sensing unit and magnetic conduction unit 3 is between 0 to 1 micron; Preferably, the gap between described sensing unit and magnetic conduction unit is between 1 nanometer to 300 nanometers.The magnetic material layer 4 of sensing unit also can connect together with magnetic conduction unit, does not repeat them here.
On subregion on magnetic material layer 4, magnetic conduction unit 3 and in groove 2, insulation course unit 6 is also set; Insulation course unit 6 in groove 2 is provided with metal level unit 7, on insulation course when metal level unit is the metal electrode by etching sensing unit naturally in groove, thus is formed.Metal level unit 7, in order to realize Autonomous test effect, namely by applying electric current on self-monitoring metal, producing the magnetic field perpendicular to base plane, thus realizing Autonomous test.
The present embodiment is in the process manufacturing metal level, and remain the metal level in groove, as shown in Figures 6 and 7, the metal level in groove can as self-monitoring parts.In self-monitoring process, about the metal in Fig. 7 in groove, end applies electric current, namely the magnetic field being parallel to sidewall can be produced on the trenched side-wall shown in Fig. 6, and sensing unit is sent into by magnetic conduction unit in this magnetic field, and then export field signal at the output port of sensing unit, by comparing this field signal and the relation applying electric current, play the evaluation of Z axis Magnetic Sensor, self-monitoring effect.
In addition, magnetic sensing device can also comprise horizontal direction magnetic sensing element, in order to respond to the magnetic field properties of first direction (as X-axis), second direction (as Y-axis).
Be described above the structure of magnetic sensing device of the present invention, the present invention is while announcement magnetic sensing device structure, and also disclose a kind of preparation technology of above-mentioned magnetic sensing device, described preparation technology comprises the steps:
[step S1] arranges substrate;
[step S2] arranges groove on the surface of substrate, and the length of groove is more than five times of width;
[step S3], at the magnetic material layer of substrate surface deposition sensing unit, magnetic material layer can comprise protective seam, prepares magnetic conduction unit; The main part of magnetic conduction unit is deposited in groove, and has part to expose groove to substrate surface;
[step S4] deposition of insulative material, obtains insulation course, and opens through hole;
[step S5] arranges electrode layer;
[step S6] etches, and forms electrode layer; In groove, insulation course when metal electrode etching naturally in groove forms metal level unit 7, namely as Autonomous test metal level; The distance of the comb-like electrode formed above inductive layer is less than the length of magnetic conduction unit, and namely a magnetic conduction unit is at least the magnetic signal that two pairs of comb-like electrodes provide induction.Wherein, photoresist is had to remain, protect in groove during etching.
Embodiment two
Refer to Fig. 8, Fig. 9, in the present embodiment, above magnetic conduction unit and sensing unit, can not insulation material layer be set.
Above the magnetic material of sensing unit, be furnished with the electrod-array of comb teeth-shaped, existing arrangement is: a pair comb-like electrode correspond to a magnetic conduction unit (groove); In structure different from the past, in the present invention, a magnetic conduction unit (groove) correspond to two to above comb-like electrode, namely a magnetic conduction unit can be that sensing unit more than two exports magnetic signal, thus realize the detection of Z axis magnetic signal, compare traditional structure, there is better sensitivity.Gap between sensing unit and magnetic conduction unit between 10 nanometers are to 1 micron, such as 100 nanometers, 200 nanometers, 300 nanometers.
Figure 8 shows that the vertical view of Z axis sensor, groove is strip, forms rectangular magnetic conduction unit in the trench, correspond to several to the sensing unit between comb-like electrode.Sectional view as shown in Figure 9.
Embodiment three
The difference of the present embodiment and above embodiment is, in the present embodiment, Z axis sensor also can be structure as shown in Figure 10 and Figure 11.
In Figure 10, in a long groove, be provided with multiple magnetic conduction unit, the corresponding multiple sensing unit of each magnetic conduction unit.
In Figure 11, be provided with a magnetic conduction unit in a groove, multiple groove is arranged in a line, the corresponding multiple sensing unit of each magnetic conduction unit.
In sum, the magnetic sensing device that the present invention proposes and preparation technology thereof, give two to provide electric signal to the comb-like electrode of above sensing unit by a magnetic conductance unit, the device obtained has stronger sensitivity.In addition, while the present invention's comb-like electrode above manufacture sensing unit is right, remain the metal level in groove, this metal level is close to groove, electric signal is applied in groove direction, namely can obtain magnetic signal (i.e. Z-direction signal) in the direction being parallel to trenched side-wall, so realize the Autonomous test of Z axis.
Here description of the invention and application is illustrative, not wants by scope restriction of the present invention in the above-described embodiments.Distortion and the change of embodiment disclosed are here possible, are known for the replacement of embodiment those those of ordinary skill in the art and the various parts of equivalence.Those skilled in the art are noted that when not departing from spirit of the present invention or essential characteristic, the present invention can in other forms, structure, layout, ratio, and to realize with other assembly, material and parts.When not departing from the scope of the invention and spirit, can other distortion be carried out here to disclosed embodiment and change.
Claims (12)
1. a magnetic sensing device, is characterized in that, described device comprises third direction magnetic sensing element, and this third direction magnetic sensing element comprises:
Substrate, its surface has groove, and the length of groove is more than five times of width;
Magnetic conduction unit, its main part is arranged in groove, and has part to expose groove to substrate surface, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures;
Sensing unit, be arranged on described substrate surface, described sensing unit directly can measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and is directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two; Described sensing unit comprises magnetic material layer and is arranged at the metal electrode layer on magnetic material layer; Sensing unit comprises two adjacent comb-like electrodes, and the magnetic conduction unit being arranged in a groove matches with multiple sensing unit; The spacing of the comb-like electrode formed above inductive layer is less than the length of a magnetic conduction unit, and namely a magnetic conduction unit is at least the magnetic signal that two pairs of comb-like electrodes provide induction; Gap is had between sensing unit and magnetic conduction unit;
Insulation course unit, is arranged on the subregion on magnetic material layer, magnetic conduction unit and in groove;
Metal level unit, is arranged on the insulation course unit in groove, on insulation course when metal level unit is the metal electrode by etching sensing unit naturally in groove, thus is formed; Metal level unit, in order to realize Autonomous test effect, namely by applying electric current on self-monitoring metal, producing the magnetic field perpendicular to base plane, thus realizing Autonomous test; In self-monitoring process, the metal level unit two ends in groove apply electric current, and can produce the magnetic field being parallel to trenched side-wall on trenched side-wall, metal level unit two ends refer to two sidewalls being arranged at groove respectively; And sensing unit is sent into by magnetic conduction unit in this magnetic field, and then exporting field signal at the output port of sensing unit, by comparing this field signal and the relation applying electric current, playing the evaluation of Z axis Magnetic Sensor, self-monitoring effect.
2. a magnetic sensing device, is characterized in that, described device comprises third direction magnetic sensing element, and this third direction magnetic sensing element comprises:
Substrate, its surface has groove;
Magnetic conduction unit, its main part is arranged in groove, and has part to expose groove to substrate surface, in order to collect the field signal of third direction, and this magnetic signal is outputted to sensing unit measures;
Sensing unit, be arranged on described substrate surface, described sensing unit directly can measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and is directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two; Described sensing unit comprises magnetic material layer and is arranged at the metal electrode layer on magnetic material layer; Sensing unit comprises two adjacent comb-like electrodes, and the magnetic conduction unit being arranged in a groove matches with multiple sensing unit; Gap is had between sensing unit and magnetic conduction unit;
Insulation course unit, is realized by deposition of insulative material on magnetic conduction unit and groove.
3. magnetic sensing device according to claim 2, is characterized in that:
Gap between described sensing unit and magnetic conduction unit is between 0 to 1 micron.
4. magnetic sensing device according to claim 2, is characterized in that:
Gap between described sensing unit and magnetic conduction unit is between 1 nanometer to 300 nanometers.
5. magnetic sensing device according to claim 2, is characterized in that:
Described device also comprises metal level unit, be arranged on the insulation course unit in groove, in order to realize Autonomous test effect, namely by applying electric current on self-monitoring metal, produce the magnetic field perpendicular to base plane, thus realize Autonomous test, namely by applying electric current on self-monitoring metal, produce the magnetic field perpendicular to base plane, thus realize Autonomous test.
6. magnetic sensing device according to claim 5, is characterized in that:
In self-monitoring process, the metal level unit two ends in groove apply electric current, and can produce the magnetic field being parallel to trenched side-wall on trenched side-wall, metal level unit two ends refer to two sidewalls being arranged at groove respectively; And this magnetic field is by the collection of magnetic conduction unit, feeding sensing unit, and then exporting field signal at the output port of sensing unit, by comparing this field signal and the relation applying electric current, playing the evaluation of Z axis Magnetic Sensor, self-monitoring effect.
7. magnetic sensing device according to claim 2, is characterized in that:
The length of described groove is more than five times of width.
8. magnetic sensing device according to claim 2, is characterized in that:
The spacing of the comb-like electrode formed above inductive layer is less than the length of a magnetic conduction unit, and namely a magnetic conduction unit is at least the magnetic signal that two pairs of comb-like electrodes provide induction.
9. a preparation technology for magnetic sensing device described in claim 1, is characterized in that, described preparation technology comprises the steps:
Step S1, substrate is set;
Step S2, arrange groove on the surface of substrate, the length of groove is more than five times of width;
Step S3, substrate surface deposition sensing unit magnetic material layer, magnetic material layer can comprise protective seam, prepares magnetic conduction unit; The main part of magnetic conduction unit is deposited in groove, and has part to expose groove to substrate surface;
Step S4, deposition of insulative material, obtain insulation course, and open through hole;
Step S5, electrode layer is set;
Step S6, etching, form electrode layer; In groove, insulation course when metal electrode etching naturally in groove forms metal level, namely as Autonomous test metal level; The distance of the comb-like electrode formed above inductive layer is less than the length of magnetic conduction unit, and namely a magnetic conduction unit is at least the magnetic signal that two pairs of comb-like electrodes provide induction.
10. a preparation technology for magnetic sensing device described in claim 2, is characterized in that, described preparation technology comprises the steps:
Step S1, substrate is set;
Step S2, groove is set on the surface of substrate;
Step S3, substrate surface deposition sensing unit magnetic material layer, magnetic material layer can comprise protective seam, prepares magnetic conduction unit; The main part of magnetic conduction unit is deposited in groove, and has part to expose groove to substrate surface;
Step S4, deposition of insulative material, obtain insulation course, and open through hole;
Step S5, electrode layer is set;
Step S6, etching, form electrode layer; Sensing unit comprises two adjacent comb-like electrodes, and the magnetic conduction unit being arranged in a groove matches with multiple sensing unit.
11. preparation technologies according to claim 10, is characterized in that:
The length of described groove is more than five times of width; In step S6, photoresist in groove, during etching, is had to remain, protect.
12. preparation technologies according to claim 10, is characterized in that:
In groove, insulation course when metal electrode etching naturally in groove forms metal level, namely as Autonomous test metal level; The distance of the comb-like electrode formed above inductive layer is less than the length of magnetic conduction unit, and namely a magnetic conduction unit is at least the magnetic signal that two pairs of comb-like electrodes provide induction.
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Application publication date: 20150318 |