CN104422905A - Magnetic sensor and preparation technology thereof - Google Patents
Magnetic sensor and preparation technology thereof Download PDFInfo
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- CN104422905A CN104422905A CN201310385788.8A CN201310385788A CN104422905A CN 104422905 A CN104422905 A CN 104422905A CN 201310385788 A CN201310385788 A CN 201310385788A CN 104422905 A CN104422905 A CN 104422905A
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- 238000005516 engineering process Methods 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 49
- 239000000696 magnetic material Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 4
- 230000004907 flux Effects 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 239000012774 insulation material Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 10
- 239000003989 dielectric material Substances 0.000 claims description 10
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 abstract description 8
- 238000005498 polishing Methods 0.000 abstract description 2
- 230000008859 change Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 4
- 230000005381 magnetic domain Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
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- 229910052786 argon Inorganic materials 0.000 description 1
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- 230000007547 defect Effects 0.000 description 1
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- 238000005538 encapsulation Methods 0.000 description 1
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- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The invention discloses a magnetic sensor and a preparation technology thereof. The preparation technology comprises the steps that medium material is deposited on a substrate so that a first medium layer is formed; a groove array is formed on the first medium layer; width of a groove opening is greater than depth of the groove opening; magnetic material is deposited so that a magnetic material layer is formed; annealing is performed in a magnetic field; insulating material is deposited so that an insulating material layer is formed, and the groove is fully filled, the surface of the insulating material layer is flattened through polishing and then the technology is subsequently converted into a planer technology; the pattern of the magnetic sensor is formed, a sensing unit is formed, and a magnetic-conductive unit is formed via application of the groove, i.e. a triaxial sensor is formed on a single chip; and through holes and electrodes are manufactured. According to the triaxial sensor and the preparation technology thereof, the technological process can be optimized and performance of the sensor can be enhanced.
Description
Technical field
The invention belongs to semiconductor process techniques field, relate to a kind of sensor, particularly relate to a kind of magnetic sensor; Meanwhile, the invention still further relates to the preparation technology of magnetic sensor.
Background technology
Magnetic Sensor is according to its principle, following a few class can be divided into: Hall element, magnetodiode, anisotropic magnetoresistive element (AMR), tunnel junction magnetic resistance (TMR) element and giant magnetoresistance (GMR) element, inductive coil, superconductive quantum interference magnetometer etc.
Electronic compass is one of important applied field of Magnetic Sensor, along with the fast development of consumer electronics in recent years, except navigational system, increasing smart mobile phone and panel computer is also had also to start standard configuration electronic compass, bring very large application convenient to user, in recent years, the demand of Magnetic Sensor also starts from two axially three axle development.The Magnetic Sensor of diaxon, i.e. planar magnetic sensor, can be used for magnetic field intensity on measurement plane and direction, can representing by X and Y-axis both direction.
Below introduce the principle of work of existing Magnetic Sensor.Magnetic Sensor adopts anisotropic magnetoresistance (AnisotropicMagneto-Resistance) material to carry out the size of magnetic induction density in detection space.This alloy material magnetic field to external world with crystal structure is very sensitive, and the power change in magnetic field can cause AMR self-resistance value to change.
In manufacture, application process, be added on AMR unit by a high-intensity magnetic field and make it magnetize in one direction, set up a main magnetic domain, the axle vertical with main magnetic domain is called as the sensitive axes of this AMR, as shown in Figure 1.In order to make measurement result change in a linear fashion, the plain conductor on AMR material is 45° angle oblique arrangement, and electric current flows through from these wires and AMR material, as shown in Figure 2; The main magnetic domain set up on AMR material by initial high-intensity magnetic field and sense of current have the angle of 45 °.
When there is external magnetic field Ha, on AMR unit, main magnetic domain direction will change and be no longer initial direction, and so the angle theta of magnetic direction M and electric current I also can change, as shown in Figure 3.For AMR material, the change at θ angle can cause the change of AMR self resistance, as shown in Figure 4.
By the measurement changed AMR cell resistance, external magnetic field can be obtained.In the application of reality, in order to improve the sensitivity etc. of device, Magnetic Sensor can utilize Wheatstone bridge to detect the change of AMR resistance, as shown in Figure 5.R1/R2/R3/R4 is the AMR resistance that original state is identical, and in time external magnetic field being detected, R1/R2 resistance increases Δ R and R3/R4 reduces Δ R.Like this when not having external magnetic field, the output of electric bridge is zero; And when there being external magnetic field, the output of electric bridge is a small voltage Δ V.
Current three-axis sensor the magnetic sensing element of a plane (X, Y diaxon) sensing element and Z-direction is carried out system in package combine, to realize the function (can with reference to US Patent No. 5247278, US5952825, US6529114, US7126330, US7358722) of three axle sensings; That is need plane sensing element and Z-direction magnetic sensing element to be arranged at respectively on two circle crystalline substances or chip, link together finally by encapsulation.At present, Dan Yuanjing/chip cannot realize simultaneously the manufacture of three-axis sensor.
But existing three-axis sensor complex structure, manufacturing process is loaded down with trivial details.In view of this, nowadays in the urgent need to designing a kind of new Magnetic Sensor and preparation technology thereof, to overcome the above-mentioned defect of existing device and technique.
Summary of the invention
Technical matters to be solved by this invention is: provide a kind of Magnetic Sensor, can promote the performance of sensor, the flow process of optimized fabrication technique.
In addition, the present invention also provides a kind of preparation technology of Magnetic Sensor, can the flow process of Optimization Technology, and promotes the performance of obtained sensor.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A preparation technology for Magnetic Sensor, described preparation technology comprises the preparation technology of third direction magnetic sensing device, specifically comprises the steps:
Step S1, in substrate deposits dielectric materials, form first medium layer;
Step S2, on first medium layer, form groove array; The width at groove opening place is more than or equal to its degree of depth;
Step S4, deposition magnetic material, form flux material layer;
Step S5, anneal in magnetic field, annealing atmosphere is nitrogen, or is inert gas, or is vacuum;
Step S6, deposition of insulative material, form insulation material layer, and groove tamped, and makes insulation material layer surface form plane, make subsequent transition become planar technology;
The figure of step S7, generation Magnetic Sensor, forms the flux material layer of sensing unit, forms magnetic conduction unit simultaneously, namely form three-axis sensor on a single chip by the application of groove; The main part of described magnetic conduction unit is arranged in groove, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures; Sensing unit is arranged near groove, and there is gap between magnetic conduction unit, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;
Step S8, manufacture through hole and electrode.
As a preferred embodiment of the present invention, the second medium material that described method also comprises step S3 between step S2 from step S4, deposition is identical or different with described first medium material on the first medium layer of described formation groove array, forms second dielectric layer.
As a preferred embodiment of the present invention, in step S3, described second medium material is one or more in monox, TEOS, silicon nitride, tantalum oxide, tantalum nitride, silicon oxynitride; The thickness of second dielectric layer is less than 100 nanometers.
As a preferred embodiment of the present invention, in described step S7, be provided with gap between the flux material layer of sensing unit and magnetic conduction unit, gap size is between 1 nanometer is to 5 microns.
As a preferred embodiment of the present invention, in step S1, the dielectric material that substrate deposits is monox or ethyl orthosilicate TEOS;
In step S4, the magnetic material of deposition is AMR material or GMR material or TMR material.
As a preferred embodiment of the present invention, described preparation technology also comprises step S9 after step S8: manufacture more multi-layered flux material layer layer of dielectric material and metal level.
A kind of Magnetic Sensor, described Magnetic Sensor comprises third direction magnetic sensing device, and this third direction magnetic sensing device comprises:
Substrate;
First medium layer, is arranged at substrate surface, and first medium layer is provided with groove array; The width at groove opening place is more than or equal to its degree of depth;
Magnetic conduction unit, its main part is arranged in groove, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures;
Sensing unit, arrange near groove, and have gap between magnetic conduction unit, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;
Insulation material layer, on the flux material layer being arranged at sensing unit and magnetic conduction unit, and fills up groove.
As a preferred embodiment of the present invention, described third direction magnetic sensing device also comprises second dielectric layer, is arranged on the first medium layer of described formation groove array; Magnetic conduction unit, sensing unit are arranged in second dielectric layer.
As a preferred embodiment of the present invention, described sensing unit comprises flux material layer and is arranged at the electrode on flux material layer.
As a preferred embodiment of the present invention, be provided with gap between the flux material layer of described sensing unit and magnetic conduction unit, gap size is between 1 nanometer is to 5 microns.
As a preferred embodiment of the present invention, the width of described channel bottom is greater than the half of the degree of depth of groove.
As a preferred embodiment of the present invention, described Magnetic Sensor also comprises the second magnetic sensing device, in order to respond to the magnetic signal of first direction, second direction; Described first direction is X-direction, and second direction is Y direction, and third direction is Z-direction.
Beneficial effect of the present invention is: the Magnetic Sensor that the present invention proposes and preparation technology thereof, deposits dielectric materials in substrate, then groove is formed by photoetching and etching technics, and then fill magnetic material inside groove, and groove is tamped, the flow process of final optimization pass technique and the performance of sensor.Advantage of the present invention achieves planar technology after being groove to tamp, and simplifies follow-up multiple tracks technological process.And thicken the thickness of the magnetic material of vertical direction from physical significance, the sensitivity of the 3rd axle is got a promotion.In addition, wider groove can arrange the magnetic material of magnetic conduction unit as required.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the magnetic material of existing magnetic sensing device.
Fig. 2 is the existing magnetic material of magnetic sensing device and the structural representation of wire.
Fig. 3 is the angle schematic diagram of magnetic direction and direction of current.
Fig. 4 is the θ-R family curve schematic diagram of magnetic material.
Fig. 5 is the connection layout of Wheatstone bridge.
Fig. 6 is the schematic diagram in embodiment one after manufacturing technology steps S2 of the present invention.
Fig. 7 is the schematic diagram in embodiment one after manufacturing technology steps S6 of the present invention.
Fig. 8 is the schematic diagram of manufacturing technology steps S7 etching insulating material of the present invention in embodiment one.
Fig. 9 is the schematic diagram in embodiment one after manufacturing technology steps S7 of the present invention.
Figure 10 is the schematic diagram that in embodiment one, manufacturing technology steps S8 of the present invention deposits the second insulating material.
Figure 11 is the schematic diagram of manufacturing technology steps S8 etching insulating material of the present invention in embodiment one.
Figure 12 is the schematic diagram that in embodiment one, manufacturing technology steps S8 of the present invention forms electrode.
Embodiment
The preferred embodiments of the present invention are described in detail below in conjunction with accompanying drawing.
Embodiment one
Present invention is disclosed a kind of preparation technology of Magnetic Sensor, described preparation technology comprises preparation technology's (preparation method of XY axial magnetic sensor is prior art, does not repeat) of third direction magnetic sensing device here, specifically comprises the steps:
[step S1] deposits dielectric materials in substrate, as monox, TEOS, silicon nitride, forms first medium layer 10;
[step S2] refers to Fig. 6, and first medium layer 10 is formed groove 11 array, and the width of groove 11 is more than or equal to the half of its degree of depth.Preferably, the width of described groove 11 opening part is greater than the degree of depth; Preferably, the width bottom groove 11 is greater than the degree of depth of groove.
[step S3] is at above-mentioned dielectric material (containing groove) the second medium material that above sedimentary facies is same or different, as monox, TEOS, silicon nitride, tantalum oxide, tantalum nitride or silicon oxynitride etc., thickness is less than 100 nanometers (for 40 nanometers), forms second dielectric layer.This step can be omitted, and namely in step S4, directly on first medium layer 10, deposits magnetic material.
[step S4] deposits magnetic material, and form flux material layer 30, magnetic material is AMR, or is GMR, or is TMR material.
[step S5] anneals in magnetic field, and annealing atmosphere is nitrogen, or is inert gas (as argon gas), or is vacuum.
[step S6] refers to Fig. 7, deposition of insulative material, and groove is tamped, and forms insulation material layer 40, adopts chemically mechanical polishing to make the surface of insulation material layer 40 form plane, makes subsequent transition become planar technology, as shown in Figure 8.During deposition of insulative material, deposition can be adopted according to the actual needs, return the mode of carving, depositing again, avoid forming space in the middle of insulating material.
[step S7] refers to Fig. 8, Fig. 9, by semiconductor or similar technique, form the figure of Magnetic Sensor, except forming sensing unit 32(in order to respond to the magnetic field of X-axis Y-axis on first medium layer 10 surface) flux material layer 321 except, by the application of groove, also form magnetic conduction unit 31(Z axle sensor).Described sensing unit 32, except comprising flux material layer, also comprises electrode 322.
The main part of described magnetic conduction unit 31 is arranged in groove 11, in order to respond to the magnetic signal of third direction (as Z-direction), and this magnetic signal is outputted to sensing unit 32 measures.Described sensing unit 32 is arranged on (surface being arranged at described second dielectric layer 20) near groove 11, and there is gap between magnetic conduction unit 31, in order to measure first direction or/and the magnetic field of second direction (X-axis Y-axis), in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two; First direction, second direction, third direction can be respectively X-axis, Y-axis, Z axis.
(gap size can between 1 nanometer be to 5 microns gap between sensing unit 32 and magnetic conduction unit 31, as 1 nanometer, 5 nanometers, 1 micron, 5 microns etc.), namely both are not communicated with, its advantage has been good signal to noise ratio (S/N ratio), simultaneously because the existence in gap, electric current in sensing unit 32 can not arrive magnetic conduction unit 31, has very great help to the sensitivity of sensor and OFF-SET.
[step S8] refers to Figure 10, deposits the second insulating material, forms the second insulation material layer 50, covers described insulation material layer 40, and the gap between flux material layer 321 and magnetic conduction unit 31.Then, as shown in Figure 11, Figure 12, manufacture through hole and electrode 322.
[step S9] manufactures more multi-layered IMD and metal level according to the actual needs.
Please again consult Figure 12, the Magnetic Sensor that preparation technology of the present invention obtains comprises Z axis Magnetic Sensor, XY axial magnetic sensor, and Z axis Magnetic Sensor comprises substrate, first medium layer 10, magnetic conduction unit 31, sensing unit 32, insulation material layer 41,42, second insulation material layer 50.XY axial magnetic sensor is prior art, does not repeat here.
First medium layer 10 is arranged at substrate surface, which is provided with groove 11 array.In the present embodiment, the width of groove 11 is greater than the degree of depth.The width of described groove 11 opening part is greater than the degree of depth; Preferably, the width bottom groove 11 is greater than the degree of depth of groove.The main part of magnetic conduction unit 31 is arranged in groove 11, in order to collect the magnetic signal of third direction, and this magnetic signal is exported to sensing unit 32.
Described sensing unit 31 comprises flux material layer 321 and is arranged at the electrode 322 on flux material layer; Sensing unit 32(flux material layer 321) arrange near groove 11, and (gap size can between 1 nanometer be to 5 microns gap between magnetic conduction unit 31, as 100 nanometers, 250 nanometers, 1 micron, 2 microns etc., can certainly be other distances), in order to receive the magnetic signal of the third direction that described magnetic conduction unit 31 exports, and measure magnetic field intensity corresponding to third direction and magnetic direction according to this magnetic signal.
On the flux material layer 321 that insulation material layer 41,42 is arranged at sensing unit 32 and magnetic conduction unit 31, and groove 11 is filled up.Second insulation material layer 50 is arranged on insulation material layer 41,42.
In sum, the three-axis sensor that the present invention proposes and preparation technology thereof, deposits dielectric materials in substrate, then groove is formed by photoetching and etching technics, and then fill magnetic material inside groove, and groove is tamped, the flow process of final optimization pass technique and the performance of sensor.In addition, wider groove can arrange the magnetic material of magnetic conduction unit as required.
Here description of the invention and application is illustrative, not wants by scope restriction of the present invention in the above-described embodiments.Distortion and the change of embodiment disclosed are here possible, are known for the replacement of embodiment those those of ordinary skill in the art and the various parts of equivalence.Those skilled in the art are noted that when not departing from spirit of the present invention or essential characteristic, the present invention can in other forms, structure, layout, ratio, and to realize with other assembly, material and parts.When not departing from the scope of the invention and spirit, can other distortion be carried out here to disclosed embodiment and change.
Claims (12)
1. a preparation technology for Magnetic Sensor, is characterized in that, described preparation technology comprises the preparation technology of third direction magnetic sensing device, specifically comprises the steps:
Step S1, in substrate deposits dielectric materials, form first medium layer;
Step S2, on first medium layer, form groove array; The width at groove opening place is more than or equal to its degree of depth;
Step S4, deposition magnetic material, form flux material layer;
Step S5, anneal in magnetic field, annealing atmosphere is nitrogen, or is inert gas, or is vacuum;
Step S6, deposition of insulative material, tamp groove, carries out flatening process subsequently, makes subsequent transition become planar technology;
The figure of step S7, generation Magnetic Sensor, forms the flux material layer of sensing unit, forms magnetic conduction unit simultaneously, namely form three-axis sensor on a single chip by the application of groove; The main part of described magnetic conduction unit is arranged in groove, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures; Sensing unit is arranged near groove, and there is gap between magnetic conduction unit, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;
Step S8, manufacture through hole and electrode.
2. the preparation technology of Magnetic Sensor according to claim 1, is characterized in that:
Described method also comprises step S3 between step S2 from step S4, on the first medium layer of described formation groove array, deposit one deck or the multilayer second medium material identical or different with described first medium material, forms second dielectric layer.
3. the preparation technology of Magnetic Sensor according to claim 2, is characterized in that:
In step S3, described second medium material is one or more in monox, TEOS, silicon nitride, tantalum oxide, tantalum nitride, silicon oxynitride; The thickness of second dielectric layer is less than 100 nanometers.
4. the preparation technology of Magnetic Sensor according to claim 1, is characterized in that:
In described step S7, be provided with gap between the flux material layer of sensing unit and magnetic conduction unit, gap size is between 1 nanometer is to 5 microns.
5. the preparation technology of Magnetic Sensor according to claim 1, is characterized in that:
In step S1, the dielectric material that substrate deposits is monox or ethyl orthosilicate TEOS or silicon nitride;
In step S4, the magnetic material of deposition is AMR material or GMR material or TMR material.
6. the preparation technology of Magnetic Sensor according to claim 1, is characterized in that:
Described preparation technology also comprises step S9 after step S8: manufacture more multi-layered flux material layer layer of dielectric material and metal level.
7. a Magnetic Sensor, is characterized in that, described Magnetic Sensor comprises third direction magnetic sensing device, and this third direction magnetic sensing device comprises:
Substrate;
First medium layer, is arranged at substrate surface, and first medium layer is provided with groove array; The width at groove opening place is more than or equal to its degree of depth;
Magnetic conduction unit, its main part is arranged in groove, in order to respond to the magnetic signal of third direction, and this magnetic signal is outputted to sensing unit measures;
Sensing unit, arrange near groove, and have gap between magnetic conduction unit, in order to measure first direction or/and the magnetic field of second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure and be directed to first direction or/and the third direction magnetic field of second direction by magnetic conduction unit; First direction, second direction, third direction are mutually vertical between two;
Insulation material layer, on the flux material layer being arranged at sensing unit and magnetic conduction unit, and fills up groove.
8. Magnetic Sensor according to claim 7, is characterized in that:
Described third direction magnetic sensing device also comprises second dielectric layer, is arranged on the first medium layer of described formation groove array; Magnetic conduction unit, sensing unit are arranged in second dielectric layer.
9. Magnetic Sensor according to claim 7, is characterized in that:
Described sensing unit comprises flux material layer and is arranged at the electrode on flux material layer.
10. Magnetic Sensor according to claim 7, is characterized in that:
Be provided with gap between the flux material layer of described sensing unit and magnetic conduction unit, gap size is between 1 nanometer is to 5 microns.
11. Magnetic Sensors according to claim 7, is characterized in that:
The width of described channel bottom is greater than the half of the degree of depth of groove.
12. Magnetic Sensors according to claim 7, is characterized in that:
Described Magnetic Sensor also comprises the second magnetic sensing device, in order to respond to the magnetic signal of first direction, second direction; Described first direction is X-direction, and second direction is Y direction, and third direction is Z-direction.
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| CN108975265A (en) * | 2018-02-12 | 2018-12-11 | 黑龙江大学 | A kind of single-chip integration space magnetic vector sensor and its manufacture craft |
| CN108975261A (en) * | 2018-09-03 | 2018-12-11 | 黑龙江大学 | A kind of magnetic field sensor and process for making |
| CN108975261B (en) * | 2018-09-03 | 2024-04-19 | 黑龙江大学 | Magnetic field sensor and manufacturing process method |
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