CN104422905B - Magnetic Sensor and its preparation process - Google Patents
Magnetic Sensor and its preparation process Download PDFInfo
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- CN104422905B CN104422905B CN201310385788.8A CN201310385788A CN104422905B CN 104422905 B CN104422905 B CN 104422905B CN 201310385788 A CN201310385788 A CN 201310385788A CN 104422905 B CN104422905 B CN 104422905B
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Abstract
Present invention is disclosed a kind of Magnetic Sensor and its preparation process, the preparation process includes：The deposits dielectric materials in substrate, form first medium layer；Groove array is formed on first medium layer；Width at groove opening is more than its depth；Magnetic material is deposited, forms flux material layer；Anneal in magnetic field；Deposition of insulative material, forms insulation material layer, and groove is tamped, and polishing makes insulation material layer surface planarisation so that subsequent transition is into planar technology；The figure of Magnetic Sensor is generated, forms sensing unit, while magnetic conduction unit is formed by the application of groove, i.e., forms three-axis sensor on a single chip；Manufacture through hole and electrode.Three-axis sensor proposed by the present invention and its preparation process, can optimize technique flow, and lift the performance of sensor.
Description
Technical field
The invention belongs to semiconductor process technique field, is related to a kind of sensor, more particularly to a kind of magnetic sensor；
Meanwhile the invention further relates to the preparation process of magnetic sensor.
Background technology
Magnetic Sensor can be divided into following a few classes according to its principle：Hall element, magnetodiode, anisotropic magnetic resistance
Element（AMR）, tunnel knot magnetic resistance (TMR) element and giant magnetoresistance (GMR) element, induction coil, superconductive quantum interference magnetometer etc..
Electronic compass is one of important applied field of Magnetic Sensor, with the fast development of consumer electronics in recent years, is removed
Outside navigation system, there are more and more smart mobile phones and tablet computer to also begin to standard configuration electronic compass, brought to user
Very big application facility, in recent years, the demand of Magnetic Sensor are also begun to from two axial three axis development.The Magnetic Sensor of two axis, i.e.,
Plane Magnetic Sensor, can be used for the magnetic field intensity in measurement plane and direction, can be represented with X and Y-axis both direction.
The operation principle of existing Magnetic Sensor introduced below.Magnetic Sensor uses anisotropic magnetoresistance
（Anisotropic Magneto-Resistance）Material detects the size of magnetic induction intensity in space.It is this that there is crystal
The alloy material of structure is very sensitive to extraneous magnetic field, and the strong and weak change in magnetic field can cause AMR self-resistance values to change.
In manufacture, application process, a high-intensity magnetic field, which is added on AMR units, makes it magnetize in one direction, establishes
A main magnetic domain is played, the axis vertical with main magnetic domain is referred to as the sensitive axes of the AMR, as shown in Figure 1.In order to make measurement result with line
Property mode change, the plain conductor on AMR material is in 45° angle oblique arrangement, and electric current is upper from these conducting wires and AMR material
Cross, as shown in Figure 2；The main magnetic domain and sense of current set up by initial high-intensity magnetic field on AMR material have 45 ° of folder
Angle.
When there are during external magnetic field Ha, main magnetic domain direction will change and no longer be initial direction on AMR units,
So the angle theta of magnetic direction M and electric current I can also change, as shown in Figure 3.For AMR material, the change meeting at θ angles
Cause the change of AMR itself resistance values, as shown in Figure 4.
By the measurement changed to AMR cell resistances, external magnetic field can be obtained.In actual application, in order to improve
Sensitivity of device etc., Magnetic Sensor can utilize the change of Wheatstone bridge detection AMR resistance values, as shown in Figure 5.R1/R2/R3/
R4 is the identical AMR resistance of original state, and when external magnetic field is detected, R1/R2 resistance values increase Δ R and R3/R4 is reduced
ΔR.So in the case of no external magnetic field, the output of electric bridge is zero；And when there is external magnetic field, the output of electric bridge is one
A small voltage Δ V.
Current three-axis sensor is by a plane（X, two axis of Y）Sensing element and the magnetic sensing element of Z-direction into
Row system in package is combined, to realize the function of three axis sensing（Refer to United States Patent (USP) US5247278,
US5952825、US6529114、US7126330、US7358722）；That is need plane sensing element and Z-direction magnetic
Sensing element is respectively arranged on two wafers or chip, is linked together finally by encapsulation.At present, in single wafer/chip
On can not realize the manufacture of three-axis sensor at the same time.
However, existing three-axis sensor is complicated, manufacturing process is cumbersome.In view of this, nowadays there is an urgent need to design
A kind of new Magnetic Sensor and its preparation process, to overcome the drawbacks described above of existing device and technique.
The content of the invention
The technical problems to be solved by the invention are：A kind of Magnetic Sensor is provided, the performance of sensor, optimization system can be lifted
The flow of standby technique.
In addition, the present invention also provides a kind of preparation process of Magnetic Sensor, can optimize technique flow, and lifted to be made and passed
The performance of sensor.
In order to solve the above technical problems, the present invention adopts the following technical scheme that：
A kind of preparation process of Magnetic Sensor, the preparation process include the preparation process of third direction magnetic sensing device,
Specifically comprise the following steps：
Step S1, the deposits dielectric materials in substrate, form first medium layer；
Step S2, groove array is formed on first medium layer；Width at groove opening is more than or equal to its depth；
Step S4, magnetic material is deposited, forms flux material layer；
Step S5, anneal in magnetic field, annealing atmosphere is nitrogen, or is inert gas, or is vacuum；
Step S6, deposition of insulative material, forms insulation material layer, and groove is tamped, and makes insulating materials layer surface shape
Into plane so that subsequent transition is into planar technology；
Step S7, the figure of Magnetic Sensor is generated, forms the flux material layer of sensing unit, while the application shape for passing through groove
Into magnetic conduction unit, i.e., three-axis sensor is formed on a single chip；The main part of the magnetic conduction unit is arranged in groove, to
Sense the magnetic signal of third direction, and the magnetic signal is output to sensing unit and is measured；Sensing unit is set close to groove,
Had the gap between magnetic conduction unit, to measure the magnetic field of first direction or/and second direction, with reference to the magnetic of magnetic conduction unit output
Signal, can measure the third direction magnetic field that first direction or/and second direction are directed to by magnetic conduction unit；First direction, second
Direction, third direction are mutually perpendicular to two-by-two；
Step S8, through hole and electrode are manufactured.
As a preferred embodiment of the present invention, the method further included between step S2 and step S4 step S3,
Deposition and the first medium material identical or different second medium materials on the first medium layer for forming groove array
Material, forms second dielectric layer.
As a preferred embodiment of the present invention, in step S3, the second medium material is silica, TEOS, nitridation
One or more in silicon, tantalum oxide, tantalum nitride, silicon oxynitride；The thickness of second dielectric layer is less than 100 nanometers.
As a preferred embodiment of the present invention, in the step S7, the flux material layer of sensing unit and magnetic conduction unit it
Between be equipped with gap, gap size is between 1 nanometer to 5 microns.
As a preferred embodiment of the present invention, in step S1, the dielectric material that is deposited in substrate is for silica or just
Silester TEOS；
In step S4, the magnetic material of deposition is AMR material or GMR material or TMR materials.
As a preferred embodiment of the present invention, the preparation process further includes step S9 after step S8：Manufacture is more
The flux material layer layer of dielectric material and metal layer of layer.
A kind of Magnetic Sensor, the Magnetic Sensor include third direction magnetic sensing device, the third direction magnetic sensing device
Including：
Substrate；
First medium layer, is arranged at substrate surface, and first medium layer is equipped with groove array；Width at groove opening is big
In equal to its depth；
Magnetic conduction unit, its main part are arranged in groove, to sense the magnetic signal of third direction, and by the magnetic signal
Sensing unit is output to measure；
Sensing unit, sets close to groove, is had the gap between magnetic conduction unit, to measure first direction or/and second
The magnetic field in direction, the magnetic signal exported with reference to magnetic conduction unit, can measure and be directed to first direction or/and second party by magnetic conduction unit
To third direction magnetic field；First direction, second direction, third direction are mutually perpendicular to two-by-two；
Insulation material layer, is arranged on the flux material layer and magnetic conduction unit of sensing unit, and groove is filled up.
As a preferred embodiment of the present invention, the third direction magnetic sensing device further includes second dielectric layer, sets
In on the first medium layer of the formation groove array；Magnetic conduction unit, sensing unit are arranged in second dielectric layer.
As a preferred embodiment of the present invention, the sensing unit includes flux material layer and is arranged on flux material layer
Electrode.
As a preferred embodiment of the present invention, seam is equipped between the flux material layer and magnetic conduction unit of the sensing unit
Gap, gap size is between 1 nanometer to 5 microns.
As a preferred embodiment of the present invention, the width of the channel bottom is more than the half of the depth of groove.
As a preferred embodiment of the present invention, the Magnetic Sensor further includes the second magnetic sensing device, to sense
One direction, the magnetic signal of second direction；The first direction is X-direction, and second direction is Y direction, and third direction is Z axis
Direction.
The beneficial effects of the present invention are：Magnetic Sensor proposed by the present invention and its preparation process, deposition medium in substrate
Material, then forms groove by photoetching and etching technics, then fills magnetic material inside groove again, and groove is filled out
It is real, the flow of final optimization pass technique and the performance of sensor.Advantage of the invention is that realize plane after groove is tamped
Technique, simplifies follow-up multiple tracks technological process.And the thickness of the magnetic material of vertical direction is thickened from physical significance, has been made
The sensitivity for obtaining the 3rd axis gets a promotion.In addition, wider groove can be arranged as required to the magnetic material of magnetic conduction unit.
Brief description of the drawings
Fig. 1 is the schematic diagram of the magnetic material of existing magnetic sensing device.
Fig. 2 is the magnetic material of existing magnetic sensing device and the structure diagram of conducting wire.
Fig. 3 is the angle schematic diagram of magnetic direction and current direction.
Fig. 4 is the θ-R characteristic curve schematic diagrames of magnetic material.
Fig. 5 is the connection figure of Wheatstone bridge.
Fig. 6 is the schematic diagram after manufacturing technology steps S2 of the present invention in embodiment one.
Fig. 7 is the schematic diagram after manufacturing technology steps S6 of the present invention in embodiment one.
Fig. 8 is the schematic diagram of manufacturing technology steps S7 etching insulating materials of the present invention in embodiment one.
Fig. 9 is the schematic diagram after manufacturing technology steps S7 of the present invention in embodiment one.
Figure 10 is the schematic diagram that manufacturing technology steps S8 of the present invention deposits the second insulating materials in embodiment one.
Figure 11 is the schematic diagram of manufacturing technology steps S8 etching insulating materials of the present invention in embodiment one.
Figure 12 is the schematic diagram that manufacturing technology steps S8 of the present invention forms electrode in embodiment one.
Embodiment
The preferred embodiment that the invention will now be described in detail with reference to the accompanying drawings.
Embodiment one
Present invention is disclosed a kind of preparation process of Magnetic Sensor, the preparation process includes third direction magnetic sensing device
Preparation process（The preparation method of XY axial magnetic sensors is the prior art, is not repeated here）, specifically comprise the following steps：
【Step S1】The deposits dielectric materials in substrate, such as silica, TEOS, silicon nitride, form first medium layer 10；
【Step S2】Referring to Fig. 6, forming 11 array of groove on first medium layer 10, the width of groove 11 is more than or equal to
The half of its depth.Preferably, the width of 11 opening of groove is more than depth；Preferably, the width of 11 bottom of groove is big
In the depth of groove.
【Step S3】In above-mentioned dielectric material（Containing groove）Upper sedimentary facies with or different second medium materials, such as oxygen
SiClx, TEOS, silicon nitride, tantalum oxide, tantalum nitride or silicon oxynitride etc., thickness are less than 100 nanometers（Exemplified by 40 nanometers）,
Form second dielectric layer.This step can be omitted, i.e. in step S4, magnetic material is deposited directly on first medium layer 10.
【Step S4】Magnetic material is deposited, forms flux material layer 30, magnetic material is AMR, or is GMR, or is TMR materials.
【Step S5】Anneal in magnetic field, annealing atmosphere is nitrogen, or is inert gas（Such as argon gas）, or be true
It is empty.
【Step S6】Referring to Fig. 7, deposition of insulative material, and groove is tamped, insulation material layer 40 is formed, using change
Learning mechanical polishing makes the surface of insulation material layer 40 form plane so that subsequent transition is into planar technology, as shown in Figure 8.Deposition
During insulating materials, the shape among insulating materials can be avoided according to the actual needs by the way of deposition, time quarter, redeposition
Into gap.
【Step S7】Fig. 8, Fig. 9 are referred to, by semiconductor or similar technique, forms the figure of Magnetic Sensor
Shape, except forming sensing unit 32 on 10 surface of first medium layer（To sense the magnetic field of X-axis Y-axis）Flux material layer 321 it
Outside, by the application of groove, magnetic conduction unit 31 is also formed（Z axis sensor）.The sensing unit 32 is except including flux material layer
Outside, further include electrode 322.
The main part of the magnetic conduction unit 31 is arranged in groove 11, to sense third direction（Such as Z-direction）'s
Magnetic signal, and the magnetic signal is output to sensing unit 32 and is measured.The sensing unit 32 is set close to groove 11（Set
In the surface of the second dielectric layer 20）, had the gap between magnetic conduction unit 31, to measure first direction or/and second party
To（X-axis Y-axis）Magnetic field, with reference to magnetic conduction unit export magnetic signal, can measure by magnetic conduction unit be directed to first direction or/and
The third direction magnetic field of second direction；First direction, second direction, third direction are mutually perpendicular to two-by-two；First direction, second party
Can be respectively X-axis, Y-axis, Z axis to, third direction.
Had the gap between sensing unit 32 and magnetic conduction unit 31（Gap size 1 can such as be received between 1 nanometer to 5 microns
Rice, 5 nanometers, 1 micron, 5 microns etc.）, i.e., both do not connect, preferable signal-to-noise ratio has been the advantage is that, simultaneously as gap
In the presence of the electric current in sensing unit 32 will not reach magnetic conduction unit 31, and the sensitivity and OFF-SET to sensor have very big side
Help.
【Step S8】Referring to Fig. 10, the second insulating materials of deposition, forms the second insulation material layer 50, cover described exhausted
Gap between edge material layer 40, and flux material layer 321 and magnetic conduction unit 31.Then, as shown in Figure 11, Figure 12, manufacture is logical
Hole and electrode 322.
【Step S9】The IMD and metal layer of more layers are manufactured according to the actual needs.
Referring to Figure 12, Magnetic Sensor made from preparation process of the present invention includes Z axis Magnetic Sensor, XY axis magnetic senses
Device, Z axis Magnetic Sensor include substrate, first medium layer 10, magnetic conduction unit 31, sensing unit 32, insulation material layer 41,42, the
Two insulation material layers 50.XY axial magnetic sensors are the prior art, are not repeated here.
First medium layer 10 is arranged at substrate surface, which is provided with 11 array of groove.In the present embodiment, the width of groove 11
More than depth.The width of 11 opening of groove is more than depth；Preferably, the width of 11 bottom of groove is more than the depth of groove
Degree.The main part of magnetic conduction unit 31 is arranged in groove 11, to collect the magnetic signal of third direction, and the magnetic signal is defeated
Go out to sensing unit 32.
The sensing unit 31 includes flux material layer 321 and the electrode 322 being arranged on flux material layer；Sensing unit 32
（Flux material layer 321）Set close to groove 11, had the gap between magnetic conduction unit 31（Gap size can be at 1 nanometer to 5 microns
Between, such as 100 nanometers, 250 nanometers, 1 micron, 2 microns, naturally it is also possible to be other distances）, to receive the magnetic conduction list
The magnetic signal of the third direction of the output of member 31, and the corresponding magnetic field intensity of third direction and magnetic field side are measured according to the magnetic signal
To.
Insulation material layer 41,42 is arranged on the flux material layer 321 and magnetic conduction unit 31 of sensing unit 32, and by groove
11 fill up.Second insulation material layer 50 is then arranged on insulation material layer 41,42.
In conclusion three-axis sensor proposed by the present invention and its preparation process, deposits dielectric materials in substrate, Ran Houtong
Cross photoetching and etching technics forms groove, then fill magnetic material inside groove again, and groove is tamped, final optimization pass work
The flow of skill and the performance of sensor.In addition, wider groove can be arranged as required to the magnetic material of magnetic conduction unit.
Here description of the invention and application are illustrative, are not wishing to limit the scope of the invention to above-described embodiment
In.The deformation and change of embodiments disclosed herein are possible, real for those skilled in the art
The replacement and equivalent various parts for applying example are known.It should be appreciated by the person skilled in the art that the present invention is not being departed from
Spirit or essential characteristics in the case of, the present invention can in other forms, structure, arrangement, ratio, and with other components,
Material and component are realized.In the case where not departing from scope and spirit of the present invention, can to embodiments disclosed herein into
The other deformations of row and change.
Claims (7)
1. a kind of preparation process of Magnetic Sensor, it is characterised in that the preparation process includes third direction magnetic sensing device
Preparation process, specifically comprises the following steps：
Step S1, the deposits dielectric materials in substrate, form first medium layer；
Step S2, groove array is formed on first medium layer；Width at groove opening is more than or equal to its depth；
Step S3, one layer of deposition or multilayer and the first medium material on the first medium layer of the formation groove array
Identical or different second medium material, forms second dielectric layer；The second medium material is silica, TEOS, nitridation
One or more in silicon, tantalum oxide, tantalum nitride, silicon oxynitride；The thickness of second dielectric layer is less than 100 nanometers；
Step S4, magnetic material is deposited, forms flux material layer；
Step S5, anneal in magnetic field, annealing atmosphere is nitrogen, or is inert gas, or is vacuum；
Step S6, deposition of insulative material, tamps groove, then carries out flatening process so that subsequent transition is into planar technology；
Step S7, the figure of Magnetic Sensor is generated, forms the flux material layer of sensing unit, while led using formation by groove
Magnetic cell, i.e., form three-axis sensor on a single chip；The main part of the magnetic conduction unit is arranged in groove, to sense
The magnetic signal of third direction, and the magnetic signal is output to sensing unit and is measured；Sensing unit is set close to groove, with leading
Had the gap between magnetic cell, to measure the magnetic field of first direction or/and second direction, the magnetic exported with reference to magnetic conduction unit is believed
Number, the third direction magnetic field that first direction or/and second direction are directed to by magnetic conduction unit can be measured；First direction, second party
It is mutually perpendicular to two-by-two to, third direction；
Step S8, through hole and electrode are manufactured.
2. the preparation process of Magnetic Sensor according to claim 1, it is characterised in that：
In the step S7, gap is equipped between the flux material layer and magnetic conduction unit of sensing unit, gap size is at 1 nanometer to 5
Between micron.
3. the preparation process of Magnetic Sensor according to claim 1, it is characterised in that：
In step S1, the dielectric material deposited in substrate is silica or ethyl orthosilicate TEOS or silicon nitride；
In step S4, the magnetic material of deposition is AMR material or GMR material or TMR materials.
4. the preparation process of Magnetic Sensor according to claim 1, it is characterised in that：
The preparation process further includes step S9 after step S8：Manufacture the flux material layer layer of dielectric material and metal of more layers
Layer.
5. a kind of Magnetic Sensor, it is characterised in that the Magnetic Sensor includes third direction magnetic sensing device, the third direction magnetic
Sensing device includes：
Substrate；
First medium layer, is arranged at substrate surface, and first medium layer is equipped with groove array；Width at groove opening is more than etc.
In its depth；
Magnetic conduction unit, its main part are arranged in groove, to sense the magnetic signal of third direction, and the magnetic signal are exported
Measured to sensing unit；
Sensing unit, sets close to groove, is had the gap between magnetic conduction unit, to measure first direction or/and second direction
Magnetic field, the magnetic signal exported with reference to magnetic conduction unit, can measure and be directed to first direction or/and second direction by magnetic conduction unit
Third direction magnetic field；First direction, second direction, third direction are mutually perpendicular to two-by-two；
Insulation material layer, is arranged on the flux material layer and magnetic conduction unit of sensing unit, and groove is filled up；The trench bottom
The width in portion is more than the half of the depth of groove；
The third direction magnetic sensing device further includes second dielectric layer, is arranged at the first medium layer of the formation groove array
On；Magnetic conduction unit, sensing unit are arranged in second dielectric layer；
The Magnetic Sensor further includes the second magnetic sensing device, to sense first direction, second direction magnetic signal；Described
One direction is X-direction, and second direction is Y direction, and third direction is Z-direction.
6. Magnetic Sensor according to claim 5, it is characterised in that：
The sensing unit includes flux material layer and the electrode being arranged on flux material layer.
7. Magnetic Sensor according to claim 5, it is characterised in that：
Gap is equipped between the flux material layer and magnetic conduction unit of the sensing unit, gap size is between 1 nanometer to 5 microns.
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| CN104835908A (en) * | 2015-04-17 | 2015-08-12 | 上海华虹宏力半导体制造有限公司 | Tantalum nitride etching method for 3D Anisotropic Magnetoresistance (AMR) |
| CN105129726B (en) * | 2015-08-11 | 2017-03-01 | 上海华虹宏力半导体制造有限公司 | The manufacture method of MEMS |
| CN108975265A (en) * | 2018-02-12 | 2018-12-11 | 黑龙江大学 | A kind of single-chip integration space magnetic vector sensor and its manufacture craft |
| CN108975261B (en) * | 2018-09-03 | 2024-04-19 | 黑龙江大学 | Magnetic field sensor and manufacturing process method |
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| CN101540337A (en) * | 2008-03-18 | 2009-09-23 | 株式会社理光 | Magnetic sensor and mobile information terminal apparatus |
| CN102426344A (en) * | 2011-08-30 | 2012-04-25 | 江苏多维科技有限公司 | Triaxial magnetic field sensor |
| CN103178206A (en) * | 2013-02-26 | 2013-06-26 | 上海宏力半导体制造有限公司 | Etching method for triaxial magnetic sensor |
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| JP4323220B2 (en) * | 2003-05-28 | 2009-09-02 | 財団法人電気磁気材料研究所 | Thin film magnetic sensor and manufacturing method thereof |
| US7126330B2 (en) * | 2004-06-03 | 2006-10-24 | Honeywell International, Inc. | Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device |
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| CN101540337A (en) * | 2008-03-18 | 2009-09-23 | 株式会社理光 | Magnetic sensor and mobile information terminal apparatus |
| CN102426344A (en) * | 2011-08-30 | 2012-04-25 | 江苏多维科技有限公司 | Triaxial magnetic field sensor |
| CN103178206A (en) * | 2013-02-26 | 2013-06-26 | 上海宏力半导体制造有限公司 | Etching method for triaxial magnetic sensor |
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