CN104375098B - The preparation process of magnetic sensing device and the device - Google Patents
The preparation process of magnetic sensing device and the device Download PDFInfo
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Abstract
Present invention is disclosed a kind of magnetic sensing device and the preparation process of the device, described device includes third direction magnetic sensing element, which includes：Substrate, magnetic conduction unit, sensing unit；Substrate surface is provided with groups of slots, and one group of groups of slots includes several grooves disposed in parallel；The part of magnetic conduction unit is set in several grooves of groups of slots, and has part to expose groove to substrate surface, and the magnetic conduction unit for being set to adjacent trenches in a groups of slots is connected；The magnetic signal is output to sensing unit and measured by magnetic conduction unit to incude the magnetic signal of third direction；Sensing unit is set to the side of respective grooves group；Sensing unit measures the magnetic field of first direction or/and second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure the third direction magnetic field that first direction or/and second direction are directed to by magnetic conduction unit；First direction, second direction, third direction are mutually perpendicular to two-by-two.The sensitivity of magnetic sensing device can be improved in the present invention.
Description
Technical field
The invention belongs to magnetic field of sensing technologies, are related to a kind of sensor more particularly to a kind of magnetic sensing device；Meanwhile
The invention further relates to a kind of preparation processes of magnetic sensing device.
Background technology
Magnetic Sensor can be divided into following a few classes according to its principle：Hall element, magnetodiode, anisotropic magnetic resistance
Element（AMR）, tunnel knot magnetic resistance (TMR) element and giant magnetoresistance (GMR) element, induction coil, superconductive quantum interference magnetometer etc..
Electronic compass is one of important applied field of Magnetic Sensor, with the fast development of consumer electronics in recent years, is removed
Except navigation system, also more and more smart mobile phones and tablet computer also begin to standard configuration electronic compass, brought to user
Prodigious application facility, in recent years, the demand of Magnetic Sensor are also begun to from two axial three axis development.The Magnetic Sensor of two axis, i.e.,
Plane Magnetic Sensor can be used for measuring magnetic field intensity and the direction in plane, can be indicated with X and Y-axis both direction.
The operation principle of existing Magnetic Sensor introduced below.Magnetic Sensor uses anisotropic magnetoresistance
（Anisotropic Magneto-Resistance）Material detects the size of magnetic induction intensity in space.It is this that there is crystal
The alloy material of structure is very sensitive to extraneous magnetic field, and the strong and weak variation in magnetic field can cause AMR self-resistance values to change.
In manufacture, application process, a high-intensity magnetic field, which is added on AMR units, makes it magnetize in one direction, establishes
A main magnetic domain is played, the axis vertical with main magnetic domain is referred to as the sensitive axes of the AMR, as shown in Figure 1.In order to make measurement result with line
Property mode change, the plain conductor on AMR material is in 45° angle oblique arrangement, and electric current is upper from these conducting wires and AMR material
It crosses, as shown in Figure 2；The main magnetic domain and sense of current set up on AMR material by initial high-intensity magnetic field have 45 ° of folder
Angle.
When there are external magnetic field Ha, main magnetic domain direction will change and no longer be initial direction on AMR units,
So the angle theta of magnetic direction M and electric current I can also change, as shown in Figure 3.For AMR material, the variation meeting at the angles θ
Cause the variation of AMR itself resistance values, as shown in Figure 4.
By the measurement changed to AMR cell resistances, external magnetic field can be obtained.In actual application, in order to improve
The sensitivity etc. of device, Magnetic Sensor can utilize the variation of Wheatstone bridge detection AMR resistance values, as shown in Figure 5.R1/R2/R3/
R4 is the identical AMR resistance of original state, and when detecting external magnetic field, R1/R2 resistance values increase Δ R and R3/R4 is reduced
ΔR.In this way in the case of no external magnetic field, the output of electric bridge is zero；And when there is external magnetic field, the output of electric bridge is one
A small voltage Δ V.
Current three-axis sensor is by a plane（X, two axis of Y）Sensing element and the magnetic sensing element of Z-direction into
Row system in package is combined, to realize the function of three axis sensing（Can refer to United States Patent (USP) US5247278,
US5952825,US6529114,US7126330,US7358722）；That is it needs plane sensing element and Z-direction magnetic
Sensing element is respectively arranged on two wafers or chip, is linked together finally by encapsulation.Currently, in single wafer/chip
On can not realize the manufacture of three-axis sensor simultaneously.
In addition to this, nowadays the preparation process of magnetic sensor is complicated；And the magnetic material film of Z axis is due to relatively thin,
Sensitivity is not good enough.
In view of this, nowadays there is an urgent need to design a kind of new magnetic sensing device and its preparation process, to overcome existing device
The drawbacks described above of part and technique.
Invention content
The technical problem to be solved by the present invention is to：A kind of magnetic sensing device is provided, the sensitive of magnetic sensing device can be improved
Degree.
In addition, the present invention also provides a kind of preparation process of magnetic sensing device, the spirit of magnetic sensing device obtained can be improved
Sensitivity.
In order to solve the above technical problems, the present invention adopts the following technical scheme that：
A kind of magnetic sensing device, which is characterized in that described device includes vertical direction magnetic sensing element, the vertical direction magnetic
Sensing element includes：
Substrate, surface are provided with groups of slots, and one group of groups of slots includes several grooves disposed in parallel；
Magnetic conduction unit, containing flux material layer, the part of magnetic conduction unit is set in several grooves of groups of slots, and has portion
Divide and expose groove to substrate surface, the magnetic conduction unit for being set to adjacent trenches in a groups of slots is connected；The magnetic conduction unit
To collect the magnetic field signal of vertical direction, and the magnetic field signal is exported；
Sensing unit is set to the side of respective grooves group, is had the gap between magnetic conduction unit；The sensing unit is
The Magnetic Sensor of induction and substrate surface parallel direction, is set on the substrate surface, containing flux material layer, to receive
State magnetic conduction unit output vertical direction magnetic signal, and according to the magnetic signal measure the corresponding magnetic field intensity of vertical direction and
Magnetic direction；The vertical direction is the vertical direction of substrate surface；The sensing unit of one group of groups of slots side and this group of groove
The corresponding magnetic conduction unit matching of group；
The magnetic sensing device further includes the first Magnetic Sensor, the second Magnetic Sensor, respectively incuding and substrate surface
The magnetic field intensity of parallel first direction, second direction, first direction, second direction are mutually perpendicular to.
A kind of magnetic sensing device, described device include third direction magnetic sensing element, the third direction magnetic sensing element packet
It includes：
Substrate, surface are provided with groups of slots, and one group of groups of slots includes several grooves disposed in parallel；
The part of magnetic conduction unit, magnetic conduction unit is set in several grooves of groups of slots, and has part to expose groove to base
Bottom surface, the magnetic conduction unit for being set to adjacent trenches in a groups of slots are connected；The magnetic conduction unit is incuding third party
To magnetic signal, and the magnetic signal is output to sensing unit and is measured；
Sensing unit is set to the side of respective grooves group, is had the gap between magnetic conduction unit；The sensing unit measures
The magnetic field of first direction or/and second direction can measure in conjunction with the magnetic signal that magnetic conduction unit exports and be directed to the by magnetic conduction unit
One direction or/and the third direction magnetic field of second direction；First direction, second direction, third direction are mutually perpendicular to two-by-two.
As a preferred embodiment of the present invention, the third direction magnetic sensing element includes peripheral circuit, for calculating
Magnetic field intensity and magnetic direction, and exported.
As a preferred embodiment of the present invention, the main part of the magnetic conduction unit and the angle of substrate surface are 45 °
~90 °；The sensing unit is adjacent to substrate surface setting, parallel with substrate surface.
As a preferred embodiment of the present invention, described device further comprises the second magnetic sensing element, to incude
The magnetic signal of one direction or/and second direction, and with this measure first direction or/and the corresponding magnetic field intensity of second direction and
Magnetic direction.
A kind of preparation process of magnetic sensing device, the preparation process include the following steps：
Step 1, setting substrate；
Groups of slots is arranged on the surface of substrate in step 2；One group of groups of slots includes several grooves disposed in parallel；
Step 3, the flux material layer and magnetic conduction unit that sensing unit is prepared in substrate surface；The part of the magnetic conduction unit is set
It is placed in several grooves of groups of slots, and there is part to expose groove to substrate surface, be set to adjacent trenches in a groups of slots
Magnetic conduction unit be connected；The magnetic signal is output to induction by the magnetic conduction unit to incude the magnetic signal of third direction
Unit measures；The sensing unit is set to the side of respective grooves group, is had the gap between magnetic conduction unit；The induction
Unit measures the magnetic field of first direction or/and second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure by magnetic conduction unit
It is directed to the third direction magnetic field of first direction or/and second direction；First direction, second direction, third direction are mutual two-by-two
Vertically；
Electrode layer is arranged in step 4 on sensing unit.
A kind of preparation process of magnetic sensing device, the preparation process include the preparation step of third direction magnetic sensing device
Suddenly, specifically comprise the following steps：
Step S1, the deposits dielectric materials in substrate form first medium layer；
Step S2, groups of slots is formed on first medium layer；One group of groups of slots includes several grooves disposed in parallel；
Step S4, magnetic material is deposited, flux material layer is formed；
Step S5, protection materials are deposited, the protected material bed of material is formed, and groove is tamped, makes protection materials layer surface shape
At plane so that subsequent transition is at planar technology；
Step S6, it anneals in magnetic field, annealing atmosphere is nitrogen, or is inert gas, or is vacuum；
Step S7, the figure for generating Magnetic Sensor, forms the flux material layer of sensing unit, while the application shape for passing through groove
At magnetic conduction unit；The part of the magnetic conduction unit is set in several grooves of groups of slots, and has part to expose groove, is set to
The magnetic conduction unit of adjacent trenches is connected in one groups of slots；The magnetic conduction unit to incude the magnetic signal of third direction, and
The magnetic signal is output to sensing unit to measure；The sensing unit is set to the side of respective grooves group, with magnetic conduction list
It is had the gap between member；The sensing unit measures the magnetic field of first direction or/and second direction, the magnetic exported in conjunction with magnetic conduction unit
Signal can measure the third direction magnetic field that first direction or/and second direction are directed to by magnetic conduction unit；First direction, second
Direction, third direction are mutually perpendicular to two-by-two；
Step S8, through-hole and electrode are manufactured.
As a preferred embodiment of the present invention, the method further include between step S2 and step S4 step S3,
Deposition and the first medium material identical or different second medium materials on the first medium layer for forming groups of slots,
Form second dielectric layer.
As a preferred embodiment of the present invention, in step S3, the second medium material is silica, TEOS, nitridation
It is one or more in silicon, tantalum oxide, tantalum nitride, silicon oxynitride；The thickness of second dielectric layer is less than 100 nanometers.
As a preferred embodiment of the present invention, in the step S7, the flux material layer of sensing unit and magnetic conduction unit it
Between be equipped with gap, gap size is between 1 nanometer to 5 microns.
As a preferred embodiment of the present invention, the preparation process further includes step S9 after step S8：Manufacture is more
The flux material layer layer of dielectric material and metal layer of layer.
The beneficial effects of the present invention are：The preparation process of magnetic sensing device proposed by the present invention and the device, by more
A groove increases the physical thickness of the magnetic material film of Z axis, to improve the sensitivity of Z axis.In addition, the present invention is single
There is the sensing unit of tri- axis direction of X, Y and Z simultaneously, the alternative integrated peripheries ASIC electricity on single-chip on wafer/chip
The CMOS technology of road, manufacturing process and standard is completely compatible；With good manufacturability, excellent performance and apparent valence
Lattice competitiveness.
Description of the drawings
Fig. 1 is the schematic diagram of the magnetic material of existing magnetic sensing device.
Fig. 2 is the magnetic material of existing magnetic sensing device and the structural schematic diagram of conducting wire.
Fig. 3 is the angle schematic diagram of magnetic direction and current direction.
Fig. 4 is the θ-R characteristic curve schematic diagrames of magnetic material.
Fig. 5 is the connection figure of Wheatstone bridge.
Fig. 6 is the schematic diagram after manufacturing technology steps S2 of the present invention in embodiment one.
Fig. 7 is the schematic diagram after manufacturing technology steps S3 of the present invention in embodiment one.
Fig. 8 is the schematic diagram after manufacturing technology steps S5 of the present invention in embodiment one.
Fig. 9 is the structural schematic diagram of magnetic sensing device of the present invention.
Figure 10 is the vertical view of Fig. 9.
Specific implementation mode
The preferred embodiment that the invention will now be described in detail with reference to the accompanying drawings.
Embodiment one
Fig. 9, Figure 10 are please referred to, present invention is disclosed a kind of magnetic sensing device, described device includes vertical direction（As
Three directions, naturally it is also possible to be other third directions）Magnetic sensing element, the vertical direction magnetic sensing element include：Substrate, first
Dielectric layer 10, second dielectric layer 20, magnetic conduction unit 31, sensing unit 32, the protected material bed of material 41,42.It is of course also possible to be not provided with
Sensing unit 32 is arranged in second dielectric layer 20 directly on first medium layer 10；It can also be by first medium layer 10, second medium
Layer 20 regards a part for substrate as.
First medium layer 10 is set to substrate surface, which is provided with groups of slots, and one group of groups of slots includes several is arranged in parallel
Groove 11（As shown in figure 9, one group of groups of slots includes two grooves 11 disposed in parallel in the present embodiment）；Second dielectric layer 20
It is set to described formed on the first medium layer 10 of groups of slots.
Magnetic conduction unit 31 contains flux material layer, and the part of magnetic conduction unit 31 is set in several grooves 11 of groups of slots, and
There is part to expose groove 11 to 20 surface of second dielectric layer, is set to the magnetic conduction unit of adjacent trenches 11 in a groups of slots（It leads
Magnetic part）It is connected；The magnetic conduction unit 31 exports the magnetic field signal to collect the magnetic field signal of vertical direction.Institute
State the part and substrate that magnetic conduction unit 31 is located in groove（Or second dielectric layer 20）The angle on surface is 45 °~90 °；The sense
Unit is answered to be adjacent to substrate surface setting, it is parallel with substrate surface.
Sensing unit 32 is set to the side of respective grooves group, is had the gap between magnetic conduction unit 31；The sensing unit
31 be the Magnetic Sensor of induction and substrate surface parallel direction, is set on the substrate surface, containing flux material layer, to connect
The magnetic signal for the vertical direction that the magnetic conduction unit 31 exports is received, and the corresponding magnetic field of vertical direction is measured according to the magnetic signal
Intensity and magnetic direction.The vertical direction is substrate（Or second dielectric layer 20）The vertical direction on surface；One group of groups of slots one
The magnetic conduction unit matching corresponding with this group of groups of slots of sensing unit 32 of side.
The protected material bed of material 41,42 is set on the flux material layer and magnetic conduction unit 31 of sensing unit 32, and by groove 11
It fills up.
In addition, the magnetic sensing device further includes the first Magnetic Sensor, the second Magnetic Sensor, respectively incuding and substrate
The magnetic field intensity of the parallel first direction in surface, second direction, first direction, second direction are mutually perpendicular to.
The present invention also discloses a kind of preparation process of magnetic sensing device, and the preparation process includes third direction magnetic sensing dress
The preparation process set, specifically comprises the following steps：
【Step S1】The deposits dielectric materials in substrate form first medium layer such as silica, TEOS.
【Step S2】Referring to Fig. 6, forming groups of slots on first medium layer；One group of groups of slots includes several is arranged in parallel
Groove 11.Groove dimensions size（Groove width）It can control at 100 nanometers, 200 nanometers or 300 nanometers, groove 11
Size depends on the thickness requirements of the magnetic material of required three-axis sensor.The section of groove 11 can be rectangle, circle
Shape etc., short side is as critical size；There is no limit short side is limited to be more than 1 nanometer long side.
【Step S3】Referring to Fig. 7, deposition and the first medium material on the first medium layer for forming groups of slots
Identical or different second medium material is expected, such as silica, TEOS, silicon nitride, tantalum oxide, tantalum nitride or silicon oxynitride
It is less than 100 nanometers Deng, thickness（For 40 nanometers）, form second dielectric layer 20.
【Step S4】Referring to Fig. 8, deposition magnetic material, forms flux material layer 30, magnetic material is AMR, or is GMR, or is
TMR materials.
【Step S5】Protection materials are deposited, the protected material bed of material is formed, and groove is tamped, makes protection materials layer surface shape
At plane so that subsequent transition is at planar technology, as shown in Figure 8.
【Step S6】It anneals in magnetic field, annealing atmosphere is nitrogen, or is inert gas, or is vacuum.
【Step S7】Referring to Fig. 9, by semiconductor or similar technique, the figure of Magnetic Sensor is formed, it is raw
At the figure of Magnetic Sensor, sensing unit 32 is formed（Incude the magnetic field of X-axis Y direction）Flux material layer, while passing through groove
Application form magnetic conduction unit 31（Incude the magnetic field of Z-direction, and is transmitted to sensing unit measurement）.As shown in figure 9, i.e. in single
On piece forms the sensor of three axis, and vertical view is as shown in Figure 10.
The part of the magnetic conduction unit 31 is set in several grooves of groups of slots, and has part to expose groove to second Jie
Matter layer surface, the magnetic conduction unit for being set to adjacent trenches in a groups of slots are connected；The magnetic conduction unit 31 is incuding
The magnetic signal in three directions, and the magnetic signal is output to sensing unit and is measured；The sensing unit 32 is set to corresponding ditch
It is had the gap between the side of slot group, with magnetic conduction unit；The sensing unit 32 measures first direction or/and the magnetic of second direction
, in conjunction with the magnetic signal that magnetic conduction unit exports, the third that first direction or/and second direction are directed to by magnetic conduction unit can be measured
Direction magnetic field；First direction, second direction, third direction are mutually perpendicular to two-by-two.The flux material layer of sensing unit 32 and magnetic conduction list
Gap is equipped between member, gap size is between 1 nanometer to 5 microns.
【Step S8】Manufacture through-hole and electrode.
【Step S9】Manufacture the flux material layer layer of dielectric material and metal layer of more layers.
Embodiment two
In the present embodiment, magnetic sensing device includes third direction magnetic sensing element, which includes：
Substrate, magnetic conduction unit, sensing unit.
Substrate surface is provided with groups of slots, and one group of groups of slots includes several grooves disposed in parallel.The part of magnetic conduction unit is set
It is placed in several grooves of groups of slots, and there is part to expose groove to substrate surface, be set to adjacent trenches in a groups of slots
Magnetic conduction unit be connected；The magnetic signal is output to induction by the magnetic conduction unit to incude the magnetic signal of third direction
Unit measures.Sensing unit is set to the side of respective grooves group, is had the gap between magnetic conduction unit；The sensing unit
The magnetic field for measuring first direction or/and second direction can measure and be guided by magnetic conduction unit in conjunction with the magnetic signal that magnetic conduction unit exports
To first direction or/and the third direction magnetic field of second direction；First direction, second direction, third direction are mutually perpendicular to two-by-two.
First direction, second direction, third direction can be respectively X-axis, Y-axis, Z axis.
In addition, the third direction magnetic sensing element includes peripheral circuit, it is used for calculating magnetic field intensity and magnetic direction, and
It is exported.
The magnetic sensing device can also include the second magnetic sensing element, to incude first direction or/and second direction
Magnetic signal, and first direction or/and the corresponding magnetic field intensity of second direction and magnetic direction are measured with this.
The present embodiment also discloses a kind of preparation process of magnetic sensing device, and difference lies in do not need profit with embodiment one
Groove is filled up with insulating materials, the preparation process includes the following steps：
【Step 1】Substrate is set；
【Step 2】On the surface of substrate, groups of slots is set；One group of groups of slots includes several grooves disposed in parallel；
【Step 3】The flux material layer and magnetic conduction unit of sensing unit are prepared in substrate surface；The part of the magnetic conduction unit
It is set in several grooves of groups of slots, and there is part to expose groove to substrate surface, be set to adjacent ditch in a groups of slots
The magnetic conduction unit of slot is connected；The magnetic signal is output to sense by the magnetic conduction unit to incude the magnetic signal of third direction
Unit is answered to measure；The sensing unit is set to the side of respective grooves group, is had the gap between magnetic conduction unit；The sense
It answers unit to measure the magnetic field of first direction or/and second direction, in conjunction with the magnetic signal that magnetic conduction unit exports, can measure by magnetic conduction list
Member is directed to the third direction magnetic field of first direction or/and second direction；First direction, second direction, two two-phase of third direction
It is mutually vertical；
【Step 4】Electrode layer is set on sensing unit.
In conclusion magnetic sensing device proposed by the present invention and the preparation process of the device, increase Z axis by multiple grooves
Magnetic material film physical thickness, to improve the sensitivity of Z axis.In addition, the present invention is same on single wafer/chip
When the sensing unit with tri- axis direction of X, Y and Z, alternative integrated ASIC peripheral circuits, manufacturing process on single-chip
It is completely compatible with the CMOS technology of standard；With good manufacturability, excellent performance and apparent price competitiveness.
Description and application of the invention herein are illustrative, is not wishing to limit the scope of the invention to above-described embodiment
In.The deformation and change of embodiments disclosed herein are possible, real for those skilled in the art
The replacement and equivalent various parts for applying example are well known.It should be appreciated by the person skilled in the art that not departing from the present invention
Spirit or essential characteristics in the case of, the present invention can in other forms, structure, arrangement, ratio, and with other components,
Material and component are realized.Without departing from the scope and spirit of the present invention, can to embodiments disclosed herein into
The other deformations of row and change.
Claims (10)
1. a kind of magnetic sensing device, which is characterized in that described device includes vertical direction magnetic sensing element, which passes
Feeling component includes：
Substrate, surface are provided with groups of slots, and one group of groups of slots includes several grooves disposed in parallel；
Magnetic conduction unit, containing flux material layer, the part of magnetic conduction unit is set in several grooves of groups of slots, and has part dew
Go out groove to substrate surface, the magnetic conduction unit for being set to adjacent trenches in a groups of slots is connected；The magnetic conduction unit to
The magnetic field signal of vertical direction is collected, and the magnetic field signal is exported；
Sensing unit is set to the side of respective grooves group, is had the gap between magnetic conduction unit；The sensing unit is induction
It with the Magnetic Sensor of substrate surface parallel direction, is set on the substrate surface, containing flux material layer, to receive described lead
The magnetic signal of the vertical direction of magnetic cell output, and the corresponding magnetic field intensity of vertical direction and magnetic field are measured according to the magnetic signal
Direction；The vertical direction is the vertical direction of substrate surface；The sensing unit of one group of groups of slots side and this group of groups of slots pair
The magnetic conduction unit matching answered；
The magnetic sensing device further includes the first Magnetic Sensor, the second Magnetic Sensor, parallel with substrate surface to incude respectively
First direction, second direction magnetic field intensity, first direction, second direction are mutually perpendicular to；The protected material bed of material is set to induction
On the flux material layer and magnetic conduction unit of unit, and groove is filled up.
2. a kind of magnetic sensing device, which is characterized in that described device includes third direction magnetic sensing element, which passes
Feeling component includes：
Substrate, surface are provided with groups of slots, and one group of groups of slots includes several grooves disposed in parallel；The protected material bed of material is set to sense
It answers on the flux material layer and magnetic conduction unit of unit, and groove is filled up；
The part of magnetic conduction unit, magnetic conduction unit is set in several grooves of groups of slots, and has part to expose groove to substrate table
Face, the magnetic conduction unit for being set to adjacent trenches in a groups of slots are connected；The magnetic conduction unit is incuding third direction
Magnetic signal, and the magnetic signal is output to sensing unit and is measured；
Sensing unit is set to the side of respective grooves group, is had the gap between magnetic conduction unit；The sensing unit measures first
Direction or/and the magnetic field of second direction can measure in conjunction with the magnetic signal that magnetic conduction unit exports and be directed to first party by magnetic conduction unit
To or/and second direction third direction magnetic field；First direction, second direction, third direction are mutually perpendicular to two-by-two.
3. magnetic sensing device according to claim 2, it is characterised in that：
The third direction magnetic sensing element includes peripheral circuit, is used for calculating magnetic field intensity and magnetic direction, and exported.
4. magnetic sensing device according to claim 2, it is characterised in that：
The main part of the magnetic conduction unit and the angle of substrate surface are 45 °~90 °；The sensing unit is adjacent to substrate surface
Setting, it is parallel with substrate surface.
5. magnetic sensing device according to claim 2, it is characterised in that：
Described device further comprises the second magnetic sensing element, to incude the magnetic signal of first direction or/and second direction, and
First direction or/and the corresponding magnetic field intensity of second direction and magnetic direction are measured with this.
6. a kind of preparation process of magnetic sensing device, which is characterized in that the preparation process includes the following steps：
Step 1, setting substrate；
Groups of slots is arranged on the surface of substrate in step 2；One group of groups of slots includes several grooves disposed in parallel；
Step 3, the flux material layer and magnetic conduction unit that sensing unit is prepared in substrate surface；The part of the magnetic conduction unit is set to
In several grooves of groups of slots, and there is part to expose groove to substrate surface, is set to leading for adjacent trenches in a groups of slots
Magnetic cell is connected；The magnetic signal is output to sensing unit by the magnetic conduction unit to incude the magnetic signal of third direction
It measures；The sensing unit is set to the side of respective grooves group, is had the gap between magnetic conduction unit；The sensing unit
The magnetic field for measuring first direction or/and second direction can measure and be guided by magnetic conduction unit in conjunction with the magnetic signal that magnetic conduction unit exports
To first direction or/and the third direction magnetic field of second direction；First direction, second direction, third direction are mutually perpendicular to two-by-two；
Electrode layer is arranged in step 4 on sensing unit.
7. a kind of preparation process of magnetic sensing device, which is characterized in that the preparation process includes third direction magnetic sensing device
Preparation process, specifically comprise the following steps：
Step S1, the deposits dielectric materials in substrate form first medium layer；
Step S2, groups of slots is formed on first medium layer；One group of groups of slots includes several grooves disposed in parallel；
Step S4, magnetic material is deposited, flux material layer is formed；
Step S5, protection materials are deposited, the protected material bed of material is formed, and groove is tamped, so that protection materials layer surface is formed flat
Face so that subsequent transition is at planar technology；
Step S6, it anneals in magnetic field, annealing atmosphere is nitrogen, or is inert gas, or is vacuum；
Step S7, the figure for generating Magnetic Sensor forms the flux material layer of sensing unit, while being led using formation by groove
Magnetic cell；The part of the magnetic conduction unit is set in several grooves of groups of slots, and has part to expose groove, is set to one
The magnetic conduction unit of adjacent trenches is connected in groups of slots；The magnetic conduction unit, and should to incude the magnetic signal of third direction
Magnetic signal is output to sensing unit and measures；The sensing unit is set to the side of respective grooves group, with magnetic conduction unit it
Between have the gap；The sensing unit measures the magnetic field of first direction or/and second direction, the magnetic letter exported in conjunction with magnetic conduction unit
Number, the third direction magnetic field that first direction or/and second direction are directed to by magnetic conduction unit can be measured；First direction, second party
It is mutually perpendicular to two-by-two to, third direction；
Step S8, through-hole and electrode are manufactured.
8. preparation process according to claim 7, it is characterised in that：
The technique further includes step S3 between step S2 and step S4, sinks on the first medium layer for forming groups of slots
Product and the first medium material identical or different second medium materials, form second dielectric layer.
9. preparation process according to claim 8, it is characterised in that：
In step S3, the second medium material is in silica, TEOS, silicon nitride, tantalum oxide, tantalum nitride, silicon oxynitride
It is one or more；The thickness of second dielectric layer is less than 100 nanometers；
In the step S7, gap is equipped between the flux material layer and magnetic conduction unit of sensing unit, gap size is at 1 nanometer to 5
Between micron.
10. preparation process according to claim 7, it is characterised in that：
The preparation process further includes step S9 after step S8：Manufacture the flux material layer layer of dielectric material and metal of more layers
Layer.
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| JP4323220B2 (en) * | 2003-05-28 | 2009-09-02 | 財団法人電気磁気材料研究所 | Thin film magnetic sensor and manufacturing method thereof |
| US7271586B2 (en) * | 2003-12-04 | 2007-09-18 | Honeywell International Inc. | Single package design for 3-axis magnetic sensor |
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