CN103116143A - Integrated high-accuracy triaxial magnetic sensor - Google Patents
Integrated high-accuracy triaxial magnetic sensor Download PDFInfo
- Publication number
- CN103116143A CN103116143A CN2013100236151A CN201310023615A CN103116143A CN 103116143 A CN103116143 A CN 103116143A CN 2013100236151 A CN2013100236151 A CN 2013100236151A CN 201310023615 A CN201310023615 A CN 201310023615A CN 103116143 A CN103116143 A CN 103116143A
- Authority
- CN
- China
- Prior art keywords
- magnetic
- collector
- plane
- gmr
- magnetic sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
An integrated high-accuracy triaxial magnetic sensor comprises four magnetic measuring units, a signal-output and offset electrode, an inner plane accumulator, four magnetic orbital transfer accumulators, four pits and a basement. The inner plane accumulator adopts a symmetrical structure and is arranged in the middle of the basement, the four magnetic orbital transfer accumulators are arranged at four sides of the plane accumulator in a symmetrical mode, and each magnetic orbital transfer accumulator is arranged in a pit. Each magnetic measuring unit comprises a Wheatstone bridge formed by two giant magneto resistive (GMR) sensitive elements and two GMR reference elements. The integrated high-accuracy triaxial magnetic sensor has the advantages of being simple and compact, small in size, convenient to manufacture, low in manufacturing cost, and high in sensitivity and the like.
Description
Technical field
The present invention is mainly concerned with the feeble signal field of sensing technologies, refers in particular to a kind of integral type high precision magnetic sensor.
Background technology
Weak magentic-field is measured and all is widely used in fields such as earth-magnetic navigation, target detection, geologic prospecting, biomedicines.Magnetic sensor can be measured three components in magnetic field simultaneously, calculate inclination angle and the position angle of sensor, in navigation, decide the aspect such as appearance location and than single shaft and double-shaft sensor, more wide application prospect arranged, high resolution, low-power consumption, miniaturization are the main development directions of magnetic sensor.
Present stage is more for the magnetic sensor type of magnetic-field measurement, can be divided into assembly type and integral type by implementation, can be divided into fluxgate sensor, Hall element, Lorentz force Magnetic Sensor, GMR (Giant Magnetoresistive, giant magnetoresistance) Magnetic Sensor etc. by its principle of work.Wherein, the GMR Magnetic Sensor is based on microelectronic technique and makes, have that resolving power is high, volume is little, the characteristics such as low in energy consumption, easy batch production, be hopeful to realize integrated design based on the magnetic sensor of GMR effect, and have the characteristics of high resolution, miniaturization and low-power consumption.
Adopt the magnetic sensor of assembling mode to mainly contain a diaxon and a single shaft, three these two kinds of combinations of single shaft, mainly contain following several version: 1, assembly type magnetic sensor, its X, Y-axis adopt the GMR single-axis sensors, Z axis adopts Hall element, Hall element to be convenient for measuring the Z-direction magnetic field (patent No.: US20110234218A1); 2, the three-axis measurement scheme (patent No.: US7271586) on integrated three independent Magnetic Sensor to chips; 3, with three independently the MI Magnetic Sensor fit together and form three axles (US7298140B2); 4, Hall element and search coil sensor are assembled into together, can measure simultaneously stationary magnetic field and alternating magnetic field, resolving power is high, wherein measure the stationary magnetic field and can reach 100pT, but owing to adopting the three dimensional coils structure, volume is larger, can't realize miniaturization and the inconvenience batch production of magnetic sensor; 5, based on the annular magnetic line of force collector structure of GMR sensitive element, and it has been carried out Finite Element Simulation Analysis, this structure can improve the sensitivity of GMR sensitive element, but three discrete annular collector techniques are difficult to realization, and the assembling of need to putting together forms magnetic sensor.Generally speaking, three axle orthogonalities of assembly type magnetic sensor depend on assembly precision, and the integral type magnetic sensor that adopts MEMS technique to make has better orthogonality.
Aspect the integral type magnetic sensor that adopts MEMS technique, also there are many schemes to propose in prior art: 1, to make the MR Magnetic Sensor of different pinning directions by certain technique in same substrate, and make the collector of soft magnetic material on the MR sensitive element side of measuring Z-direction magnetic field, integrated making forms the magnetic sensor based on the MR effect.2, the sensor that will measure the Z-direction magnetic field of vertical plane is accomplished on the inclined-plane, realize three-axis measurement (patent No.: US7564237, US7126330) together with the plane inner sensor of measuring X, Y-direction magnetic field, realized integrated making, but the MR Magnetic Sensor manufacture difficulty on the inclined-plane is relatively large, is difficult to guarantee with the consistance of Magnetic Sensor in the plane.3, the MR sensitive element is produced on is used for measuring Z-direction magnetic field on the inclined-plane of substrate, with the integrated making of MR sensitive element in the plane, form magnetic sensor (patent No.: US20120268113A1, US20090027048A1, US20090027048).4, separately someone adopts CMOS technique to realize magnetic field three-axis sensor based on Hall effect having guaranteed the orthogonality between three axles, without hysteresis effect on a silicon chip, do not need special magnetic material yet, can measure simultaneously three-component, but resolving power is low, approximately 21 μ T.5, adopt micro-processing technology to utilize thermal stress to make the Hall element of making substantially vertical with base plane in the GaAs substrate, form three axle Hall elements, miniaturization and the integrated design manufacturing of magnetic sensor have been realized, technological process is relatively simple, but the angle on its Z-direction sensor and plane is difficult to accurate control, orthogonality between all three axles is difficult to guarantee, and minimum detectable is about 2 μ T.6, someone utilizes the interaction force of permanent magnet film and external magnetic field to change the principle that resistance sensing element of pressure is exported, adopt the MEMS process technology to realize the integrated design of magnetic sensor on silicon chip, guaranteed the miniaturization of sensor and integrated, but the resolving power that can reach is limited, and the measurement resolution in its Z-direction magnetic field is 250nT at present.7, can be subject to the acting force of Lorentz force due to the electrical conductor that is placed in magnetic field, by structural design, this acting force is produced displacement, cause capacitance variations, measure electric capacity and can obtain the magnetic field value, adopt the Lorentz force magnetic sensor of MEMS technology, without hysteresis effect, do not need special magnetic material yet, can guarantee orthogonality, miniaturization, low-power consumption, but the resolving power that the Magnetic Sensor of this principle can reach is not high, at present the measurement resolution of its Z component is the 70nT left and right, and the resolving power of measuring lower than plane inner field.8, on twin shaft GMR Magnetic Sensor basis, utilize the NiFe plate that the magnetic-field component distortion of vertical plane is measured to the plane, form three axle MR sensors, the usable surface micro-processing technology is realized, but the magnetic-field component after distortion is less, and Z-direction magnetic-field measurement resolving power is lower.
By above analysis to existing integrated magnetic sensor as can be known, in the integrated making of magnetic sensor, difficult point is to be to measure Z-direction magnetic field.The resolution that can reach based on the Magnetic Sensor of Hall magnet-sensitive element and Lorentz force resonance is not high, adopt the GMR sensitive element can realize high resolving power measurement demand, but the GMR sensitive element has characteristics, can only measure exactly the GMR sensitive element magnetic field planar.Address this problem and mainly contain two kinds of thinkings, the first is that Magnetic Sensor is produced on the inclined-plane of substrate, and the second is to use planar magnetic sensor measurement after forwarding in the plane with magnetic line of force steering structure to the Z-direction magnetic line of force of vertical plane.Measuring aspect, Z-direction magnetic field based on these two kinds of thinkings also has many schemes to propose at present.As: 1, add the collector of soft magnetic material in the MR elements on either side, measure (the patent No.: US7505233B2) in the plane that the magnetic line of force of vertical plane is partly rolled over; 2, at MR sensitive element side placement soft magnetism piece, be also the similar effect (patent No.: US20120200292A1); 3, make pit or boss in substrate, then the MTJ element manufacturing on the inclined-plane, measure the Z-direction magnetic field (patent No.: US20120068698) by the output signal of processing of circuit sensitive element; 4,100 surface anisotropies at silicon etch 111, the angle that depends on silicon crystalline structure is arranged between 111 and 100, then on 111 of AMR magnet-sensitive elements, due to the AMR sensitive element and base plane in a certain angle, can measure Z-direction magnetic field, noise level is 20nT@1Hz; Simultaneously, the AMR magnet-sensitive element and the AMR magnet-sensitive element on the plane that are produced on the inclined-plane are variant to the sensitivity in magnetic field, adopt simple circuit to be difficult to solve Z-direction magnetic field value from the response of two magneto sensors.
Generally, the integral type magnetic sensor has orthogonality better than assembly type, can adopt micro-processing technology to realize the miniaturization of sensor, but based on Hall element, AMR element, Lorentz force resonance magnet-sensitive element, overall resolving power is lower; Adopt GMR generally can reach higher sensitivity and resolution as sensitive element, but GMR to magnetic-field-sensitive planar, the magnetic field of vertical plane is very little on its impact.Placement soft magnetism piece can be transferred to the Z-direction magnetic line of force in the plane to a certain extent and measure near the GMR sensitive element, but above various laying methods difficulty in specific implementation is larger, and is difficult to guarantee structural symmetry and the consistency of performance of soft magnetism piece; The GMR sensitive element is produced on can directly measures Z-direction magnetic field on the inclined-plane of sensor base, but also more complicated of its implementation, and between each Magnetic Sensor on the inclined-plane and and the plane in Magnetic Sensor between consistance also be difficult to guarantee.So in prior art, how the difficult point of technical development is to measure Z-direction magnetic field with the GMR sensitive element, this difficult point has caused being difficult to realize based on designing and producing of the three-axis integrative formula Magnetic Sensor of GMR sensitive element.
Summary of the invention
The technical problem to be solved in the present invention just is: for the technical matters that prior art exists, the invention provides a kind of simple and compact for structure, volume is little, easily manufactured, cost of manufacture is cheap, highly sensitive integral type high precision magnetic sensor.
For solving the problems of the technologies described above, the present invention by the following technical solutions:
A kind of integral type high precision magnetic sensor, comprise collector in four magnetic measurement unit, signal output and bias electrode, plane, four magnetic variation rail collectors, four pits and substrate, described plane collector adopts self symmetrical structure and is positioned at the place, centre position of substrate, described four magnetic variation rail collectors are symmetry shape and distribute at the four sides of plane collector, each described magnetic variation rail collector all is arranged in a pit; Each magnetic measurement unit includes with two GMR sensitive elements and two Wheatstone bridges that the GMR reference element consists of.
As a further improvement on the present invention:
Air gap between described plane collector and magnetic variation rail collector is wider than GMR sensitive element, and described GMR sensitive element is positioned over described air gap place, and described two GMR reference elements lay respectively at the magnetic variation rail collector below of described air gap both sides.
Described magnetic variation rail collector comprises collector at the bottom of the hole that is positioned at pit bottom, be positioned at inclined-plane collector on the pit inclined-plane, be positioned at the edge collector at pit edge, and at the bottom of described hole, collector, inclined-plane collector, edge collector connect as a whole successively.
Described GMR reference element, GMR sensitive element all adopt spin valve structure or multi-layer film structure.
Intrinsic silicon is adopted in described substrate, etches the pit of four symmetries with corrosive liquid on (100) plane of intrinsic silicon after photoetching, and the inclined-plane of described pit is (111) plane of intrinsic silicon, with the angle on (100) plane be 54.74 °.
Surface deposition one layer insulating of described substrate.
Compared with prior art, the invention has the advantages that: integral type high precision magnetic sensor of the present invention, based on MEMS technique, adopted vertical magnetic field complanation measuring technique, whole magnetic sensor is highly sensitive, volume is little, low in energy consumption, GMR unit high conformity, three between centers have good orthogonality, and the sensor one-piece construction is simple, and is easily manufactured, can effectively reduce the manufacturing of the fiber grating sensors cost.
Description of drawings
Fig. 1 is plan structure schematic diagram of the present invention.
Fig. 2 is the structural representation of magnetic measurement unit in the present invention.
Fig. 3 is the structural representation of collector in the present invention.
Fig. 4 is the schematic diagram of substrate and lead-in wire in the present invention.
Fig. 5 is the schematic cross-section of magnetic variation rail collector in the present invention.
Marginal data:
1, magnetic measurement unit; 2, plane collector; 3, magnetic variation rail collector; 4, pit; 7, GMR reference element; 8, GMR sensitive element; 901, edge collector; 902, inclined-plane collector; 903, hole end collector; 10, substrate; 101, the first magnetic measurement unit; 102, the second magnetic measurement unit; 103, the 3rd magnetic measurement unit; 104, the 4th magnetic measurement unit; 301, the first magnetic variation rail collector; 302, the second magnetic variation rail collector; 303, the 3rd magnetic variation rail collector; 304, the 4th magnetic variation rail collector; 401, the first pit; 402, the second pit; 403, the 3rd pit; 404, the 4th pit; 701, the first reference element; 702, the second reference element; 801, the first sensitive element; 802, the second sensitive element; 1101,1102,1103,1104, four groups of electrodes.
Embodiment
Below with reference to Figure of description and specific embodiment, the present invention is described in further details.
As shown in Figure 1, integral type high precision magnetic sensor of the present invention, comprise four magnetic measurement unit 1, signal output and bias electrode, plane collector 2, four magnetic variation rail collectors 3, four pits 4, substrate 10 and four groups of electrodes, plane collector 2 adopts self symmetrical structure, and the centre position that is positioned at substrate 10 is located, four magnetic variation rail collectors 3 are symmetry shape and distribute at the four sides of plane collector 2, the common magnetic line of force that forms becomes rail and assembles the effect of amplifying, and each magnetic variation rail collector 3 all is arranged in a pit 4.Four magnetic measurement unit 1 are respectively the first magnetic measurement unit 101, the second magnetic measurement unit 102, the 3rd magnetic measurement unit 103, the 4th magnetic measurement unit 104; Four magnetic variation rail collectors 3 are respectively the first magnetic variation rail collector 301, the second magnetic variation rail collector 302, the 3rd magnetic variation rail collector 303, the 4th magnetic variation rail collector 304; Four pits 4 are respectively the first pit 401, the second pit 402, the 3rd pit 403, the 4th pit 404.Four groups of electrodes are respectively: 1101,1102,1103,1104.
As Fig. 2 and shown in Figure 5, each magnetic measurement unit 1 includes with two GMR sensitive elements 8 and two Wheatstone bridges that GMR reference element 7 consists of, as the first sensitive element 801, second sensitive element 802 of GMR sensitive element 8 in figure, the first reference element 701 in GMR reference element 7, the second reference element 702.Wherein, GMR reference element 7, GMR sensitive element 8 all are fine strip shape, can adopt spin valve structure in instantiation, also can adopt multi-layer film structure.GMR sensitive element 8 is between the air gap of plane collector 2 and magnetic variation rail collector 3, and when the changes of magnetic field of GMR sensitive element 8 sensitive directions, the resistance value of GMR sensitive element 8 also respective change can occur.Two GMR reference elements 7 lay respectively at magnetic variation rail collector 3 belows of air gap both sides, magnetic variation rail collector 3 is when assembling the magnetic line of force, can play magnetic screening action to GMR reference element 7 present positions, when external magnetic field changes, GMR reference element 7 can not be subject to magnetic fields, and its resistance value can not change yet.The first sensitive element 801 of GMR sensitive element 8, the resistance value of the second sensitive element 802 change with the change of external magnetic field, the output signal V of Wheatstone bridge
S1And V
S2Difference reflected by the size of measuring magnetic field, so the magnetic field value of its sensitive direction is measured in available magnetic measurement unit 1.
As shown in Figure 3, in the present embodiment, collector is made of plane collector 2 and magnetic variation rail collector 3.Collector is the soft magnetic film that adopts high magnetic permeability soft magnetic material (as NiFe, CoZrNb etc.) to make at substrate 10 surface sputterings, and its shape is not limited to shown in figure, can for rectangle or trapezoidal etc., require as long as satisfy symmetry.Collector can produce congregation to the magnetic line of force, increases the magnetic field value of GMR sensitive element 8 positions.Midplane collector 2 of the present invention is positioned at the center, magnetic variation rail collector 3 is positioned at surrounding, is symmetric.Air gap between plane collector 2 and magnetic variation rail collector 3 is slightly wider than GMR sensitive element, is used for placing measuring with GMR sensitive element 8.Magnetic variation rail collector 3 is comprised of three parts that are positioned at diverse location, hole end collector 903 is positioned at the bottom of pit 4, inclined-plane collector 902 is positioned on the inclined-plane of pit 4, edge collector 901 is positioned at the edge of pit 4, three part collectors connect as a whole successively, and the vertical height of magnetic variation rail collector 3 is the degree of depth of pit 4.The effect that plane collector 2 and magnetic variation rail collector 3 have two aspects: can assemble the magnetic-field component on vertical Magnetic Sensor plane and be torqued on the one hand in the Magnetic Sensor plane, then can measure with magnetic measurement unit 1, realize that namely the complanation of vertical magnetic field is measured; Can assemble the magnetic-field component of magnetic measurement unit 1 sensitive direction on the other hand and amplify, then measure with magnetic measurement unit 1, can improve the sensitivity of magnetic measurement unit 1.As seen, the measurement result of magnetic measurement unit 1 comprises two parts, and a part is the magnetic-field component perpendicular to sensor plane, and another part is the magnetic-field component in the plane.
As shown in Figure 4, be the schematic diagram of substrate in instantiation of the present invention 10 with lead-in wire.Wherein, intrinsic silicon is adopted in substrate 10, etch the pit 4 of four symmetries with corrosive liquid on (100) plane of intrinsic silicon after photoetching, the inclined-plane of pit 4 is intrinsic silicon (111) plane, with the angle on (100) plane be 54.74 °, the angle of determining can guarantee the symmetry of pit 4 structures, has guaranteed that also each magnetic variation rail structure has consistent action effect for magnetic field.Then, adopt gas-phase chemical reaction at surface deposition one layer insulating of substrate 10, as Si
3N
4, to improve the insulating property of substrate 10.The profile of pit 4 is not limited to rectangle shown in Figure 4, namely meets the demands as long as can form centrosymmetric inclined-plane; The corrosion depth of pit 4 is determined according to required vertical direction magnetic field conversion efficiency.Four groups of electrodes 1101 in the plane, 1102,1103,1104 shape and the neither limit of particular location are shown in Figure 4, require as long as satisfy voltage bias and the signal output of magnetic-field measurement element.In substrate 10 all electrode pairs adopt first sputter (or vacuum evaporation, plating etc.) conductive film layers (aluminium or gold etc.) again the technique of photoetching corrosion prepare moulding.
As shown in Figure 5, be the cut-away section schematic diagram of magnetic variation rail collector 3 in this example and substrate 10.GMR sensitive element 8 is measured the magnetic field value of its sensitive direction between plane collector 2 and magnetic variation rail collector 3.The first reference element 701 of GMR reference element 7, the first reference element 702 lay respectively at magnetic variation rail collector 3 belows of air gap both sides, are subject to the shielding action of magnetic variation rail collector 3, thus its resistance value do not change with external magnetic field, namely to magnetic field without response; But temperature variation can produce identical effect to the resistance value of all GMR sensitive elements 8, so the adverse effect of the 1 pair of temperature in magnetic measurement unit of the wheatstone bridge form that GMR sensitive element 8 and GMR reference element 7 form has certain inhibiting effect.
In specific operation process, the sensitivity of establishing the GMR element is
Namely when a unit of GMR element sensitive direction changes of magnetic field, the resistance change Δ R of GMR element.Get the right-handed coordinate system in Fig. 1, z is outside to vertical paper, the sensitive direction of the first magnetic measurement unit 101 in magnetic measurement unit 1 and the 3rd magnetic measurement unit 103 is the x direction, and the sensitive direction of the second magnetic measurement unit 102 in magnetic measurement unit 1 and the 4th magnetic measurement unit 104 is the y direction.When magnetic fields is arranged in magnetic sensor, establish its component along three directions of diagram coordinate system and be respectively n
x, n
y, n
zUnit, magnetic collector structural symmetry can think that it is N that collector has identical enlargement factor to the magnetic field of x direction and y direction
1, collector is made as N to z to the enlargement factor in magnetic field
2, because collector is different with magnetic line of force aggregation paths perpendicular to flat magnetic field to plane inner field, so General N
1≠ N
2
In magnetic measurement unit 1, the magnetic-field component of the first magnetic measurement unit 101 and the 3rd 103 pairs of y directions in magnetic measurement unit is insensitive, be torqued into the x negative direction under the effect of the first magnetic variation rail collector 301 in magnetic variation rail collector 3 of magnetic-field component in the z-direction, be torqued into the square of x under the effect of the 3rd magnetic variation rail collector 303 in magnetic variation rail collector 3.So under the effect in above-mentioned magnetic field, in magnetic measurement unit 1, the magnetic field value of the first magnetic measurement unit 101 air gaps of living in is N
1n
x-N
2n
zUnit, in magnetic measurement unit 1, the magnetic field value of the 3rd magnetic measurement unit 103 air gaps of living in is N
1n
x+ N
2n
zUnit.In magnetic measurement unit 1, the resistance variations of the GMR sensitive element 8 of the first magnetic measurement unit 101 is (N
1n
x-N
2n
z) Δ R, make R
x=N
1n
xΔ R, R
y=N
1n
yΔ R, R
z=N
2n
zΔ R, the Wheatstone bridge bias voltage of establishing each magnetic measurement unit 1 is V
C, in signal lead, 1102 place's current potentials are
In signal lead, the current potential at 1103 places is
The differential voltage value of the first magnetic measurement unit 101 outputs in magnetic measurement unit 1, i.e. the differential voltage value of right side magnetic measurement unit 1 output is:
Can get equally the differential voltage value of the 3rd magnetic measurement unit 103 outputs in magnetic measurement unit 1, namely the differential voltage value of magnetic measurement unit, left side 1 output is
Generally Δ R＜＜R, can draw R for weak magnetic survey
x＜＜R, R
y＜＜R, R
z＜＜R, in magnetic measurement unit 1, the output voltage of the first magnetic measurement unit 101 and the 3rd magnetic measurement unit 103 can be written as
Can calculate thus
Order
For characterizing the constant coefficient of GMR sensitive element 8 and electric bridge bias voltage, V
x=α N
1n
x, V
z1=α N
2n
zFor sensitive direction be y to magnetic measurement unit 1 in the second magnetic measurement unit 102 and the 4th magnetic measurement unit 104 can draw V equally
y=α N
1n
y, V
z2=α N
2n
zAs seen z can be measured to magnetic field in the magnetic measurement unit 1 of the magnetic measurement unit 1 of x orientation-sensitive and y orientation-sensitive, can get V to the measurement result addition
z=V
z1+ V
z2=2 α N
2n
zGenerally, due to 10 thickness limits at the bottom of silicon wafer-based, the degree of depth of pit 4 has certain limit, so collector is weaker than amplification to plane inner field, i.e. N to z to the amplification in magnetic field
2＜N
1By adjusting size relationship, can make 2N
2≈ N
1, for the magnetic field n of each axle same magnitude
x=n
y=n
z, magnetic sensor has identical output voltage V
x=V
y=V
z, i.e. each axle magnetic-field measurement of magnetic sensor has consistent measurement sensitivity.
Adopt said structure of the present invention, at first, highly sensitive; The GMR magnet-sensitive element that the present invention adopts self has higher sensitivity, and collector can also further improve the sensitivity that it measures magnetic field by assembling amplification, so final magnetic sensor also can reach higher sensitivity; Secondly, the orthogonality of magnetic sensor is good, the magnetic sensor that the present invention proposes can adopt the MEMS micro-processing technology to make, the orthogonality of x axle and the magnetic-field measurement of y axle in easy assurance plane, simultaneously, be used for that the magnetic line of force that the complanation of z axle vertical magnetic field measures becomes the inclined-plane of rail structure and the angle on plane depends on silicon crystalline structure, thus the orthogonality of z axle and sensor plane also can guarantee, finally realize the magnetic sensor that orthogonality is good; At last, the magnetic sensor that the present invention proposes has the advantages such as miniaturization, low-power consumption, what invention proposed is a three-axis integrative formula Magnetic Sensor, adopt the MEMS processes to make, can realize miniaturization, low in energy consumption, usable range is wide, simultaneously in sensor, all GMR elements all are produced on intrinsic silicon substrate (100) plane, easily realize, and with batch making, make the GMR sensitive element magnetic property of magnetic sensor have consistance preferably.
In a word, this integral type magnetic sensor based on MEMS technique has adopted vertical magnetic field complanation measuring technique, magnetic sensor is highly sensitive, the volume low power consumption is low, GMR unit high conformity, three between centers have good orthogonality, and the sensor one-piece construction is simple, and is easily manufactured, can effectively reduce the manufacturing of the fiber grating sensors cost.
Be only below the preferred embodiment of the present invention, protection scope of the present invention also not only is confined to above-described embodiment, and all technical schemes that belongs under thinking of the present invention all belong to protection scope of the present invention.Should be pointed out that for those skilled in the art, the some improvements and modifications not breaking away under principle of the invention prerequisite should be considered as protection scope of the present invention.
Claims (6)
1. integral type high precision magnetic sensor, it is characterized in that: comprise four magnetic measurement unit (1), signal output and bias electrode, plane collector (2), four magnetic variation rail collectors (3), four pits (4) and substrate (10), described plane collector (2) adopts self symmetrical structure and is positioned at the place, centre position of substrate (10), described four magnetic variation rail collectors (3) are symmetry shape and distribute at the four sides of plane collector (2), each described magnetic variation rail collector (3) all is arranged in a pit (4), each magnetic measurement unit (1) includes the Wheatstone bridge that consists of with two GMR sensitive elements (8) and two GMR reference elements (7).
2. integral type high precision magnetic sensor according to claim 1, it is characterized in that: the air gap between described plane collector (2) and magnetic variation rail collector (3) is wider than GMR sensitive element (8), described GMR sensitive element (8) is positioned over described air gap place, and described two GMR reference elements (7) lay respectively at magnetic variation rail collector (3) below of described air gap both sides.
3. integral type high precision magnetic sensor according to claim 2, it is characterized in that: described magnetic variation rail collector (3) comprises collector (903) at the bottom of the hole that is positioned at pit (4) bottom, be positioned at inclined-plane collector (902) on pit (4) inclined-plane, be positioned at the edge collector (901) at pit (4) edge, and collector at the bottom of described hole (903), inclined-plane collector (902), edge collector (901) connect as a whole successively.
4. integral type high precision magnetic sensor according to claim 2, it is characterized in that: described GMR reference element (7), GMR sensitive element (8) all adopt spin valve structure or multi-layer film structure.
5. the described integral type high precision of any one magnetic sensor according to claim 1～4, it is characterized in that: intrinsic silicon is adopted in described substrate (10), etch the pit (4) of four symmetries with corrosive liquid on 100 planes of intrinsic silicon after photoetching, the inclined-plane of described pit (4) is 111 planes of intrinsic silicon, with the angle on 100 planes be 54.74 °.
6. integral type high precision magnetic sensor according to claim 5, is characterized in that: surface deposition one layer insulating of described intrinsic silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310023615.1A CN103116143B (en) | 2013-01-22 | 2013-01-22 | Integrated high-accuracy triaxial magnetic sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310023615.1A CN103116143B (en) | 2013-01-22 | 2013-01-22 | Integrated high-accuracy triaxial magnetic sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103116143A true CN103116143A (en) | 2013-05-22 |
| CN103116143B CN103116143B (en) | 2015-01-14 |
Family
ID=48414568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310023615.1A Active CN103116143B (en) | 2013-01-22 | 2013-01-22 | Integrated high-accuracy triaxial magnetic sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103116143B (en) |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103267520A (en) * | 2013-05-21 | 2013-08-28 | 江苏多维科技有限公司 | Three-axis digital compass |
| CN103323795A (en) * | 2013-06-21 | 2013-09-25 | 中国人民解放军国防科学技术大学 | Integrated three-axis magnetic sensor |
| CN104280696A (en) * | 2013-07-03 | 2015-01-14 | 上海矽睿科技有限公司 | Three-axis sensor and manufacturing process thereof |
| CN104459576A (en) * | 2013-09-24 | 2015-03-25 | 上海矽睿科技有限公司 | Magnetic sensing device and magnetic induction method and manufacturing process of magnetic sensing device |
| CN104914385A (en) * | 2014-03-10 | 2015-09-16 | 上海矽睿科技有限公司 | Magnetic sensing device and manufacturing method thereof |
| CN106483479A (en) * | 2015-08-31 | 2017-03-08 | 张庆瑞 | Single bridges magnetic field sensor |
| CN107894576A (en) * | 2017-10-27 | 2018-04-10 | 中国人民解放军国防科技大学 | Integrated low-power-consumption three-axis magnetic field sensor with high Z-direction resolution |
| CN108254706A (en) * | 2016-12-29 | 2018-07-06 | 意法半导体股份有限公司 | MEMS magnetic sensors with improvement configuration |
| CN108627782A (en) * | 2017-03-24 | 2018-10-09 | Tdk株式会社 | Magnetic sensor |
| CN108919147A (en) * | 2018-06-22 | 2018-11-30 | 钱正洪 | A kind of triaxial magnetic field sensor |
| CN109061528A (en) * | 2018-08-02 | 2018-12-21 | 华中科技大学 | A kind of three axial plane Magnetic Sensors based on giant magnetoresistance effect |
| JPWO2017204151A1 (en) * | 2016-05-24 | 2019-03-22 | Tdk株式会社 | Magnetic sensor |
| CN110286340A (en) * | 2019-06-13 | 2019-09-27 | 中国人民解放军国防科技大学 | Serial-type triaxial integration magnetic sensor |
| CN110646852A (en) * | 2019-08-29 | 2020-01-03 | 中国地质大学（武汉） | Low-power-consumption security inspection detection system and method based on MEMS weak magnetic sensor array |
| CN110927637A (en) * | 2019-11-30 | 2020-03-27 | 北京航空航天大学青岛研究院 | Three-axis MTJ magnetic field sensor and preparation method thereof |
| CN111007442A (en) * | 2019-12-09 | 2020-04-14 | 中国科学院电子学研究所 | MEMS resonant magnetoresistive sensor for improving resolution of low-frequency magnetic field |
| CN111044951A (en) * | 2019-11-27 | 2020-04-21 | 北京航空航天大学青岛研究院 | Three-axis magnetic field sensor and manufacturing method thereof |
| CN111190126A (en) * | 2017-06-09 | 2020-05-22 | 合肥工业大学 | MEMS magnetic field sensor adopting folded beam structure, preparation process and application |
| WO2020173086A1 (en) * | 2019-02-25 | 2020-09-03 | 歌尔微电子有限公司 | Mems sensor and electronic device |
| CN111624525A (en) * | 2020-05-26 | 2020-09-04 | 中国人民解放军国防科技大学 | Integrated three-axis magnetic sensor for suppressing magnetic noise by utilizing magnetic stress regulation and control |
| CN114114102A (en) * | 2021-11-18 | 2022-03-01 | 中国人民解放军国防科技大学 | Integrated planar three-axis magnetic sensor and application method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998048291A2 (en) * | 1997-04-18 | 1998-10-29 | Koninklijke Philips Electronics N.V. | Magnetic field sensor comprising a wheatstone bridge |
| US6771472B1 (en) * | 2001-12-07 | 2004-08-03 | Seagate Technology Llc | Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments |
| CN101203769A (en) * | 2005-03-17 | 2008-06-18 | 雅马哈株式会社 | Magnetic sensor and manufacturing method thereof |
| CN102279373A (en) * | 2011-07-13 | 2011-12-14 | 中国人民解放军国防科学技术大学 | Uniaxially electrostatic-driven sensor for weak magnetic field measurement |
| CN102353913A (en) * | 2011-07-13 | 2012-02-15 | 中国人民解放军国防科学技术大学 | Measuring transducer driven by monoaxial piezoelectricity for low-intensity magnetic field |
-
2013
- 2013-01-22 CN CN201310023615.1A patent/CN103116143B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998048291A2 (en) * | 1997-04-18 | 1998-10-29 | Koninklijke Philips Electronics N.V. | Magnetic field sensor comprising a wheatstone bridge |
| US6771472B1 (en) * | 2001-12-07 | 2004-08-03 | Seagate Technology Llc | Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments |
| CN101203769A (en) * | 2005-03-17 | 2008-06-18 | 雅马哈株式会社 | Magnetic sensor and manufacturing method thereof |
| CN102279373A (en) * | 2011-07-13 | 2011-12-14 | 中国人民解放军国防科学技术大学 | Uniaxially electrostatic-driven sensor for weak magnetic field measurement |
| CN102353913A (en) * | 2011-07-13 | 2012-02-15 | 中国人民解放军国防科学技术大学 | Measuring transducer driven by monoaxial piezoelectricity for low-intensity magnetic field |
Non-Patent Citations (3)
| Title |
|---|
| EUGENE PAPERNO等: "Compensation of Crosstalk in Three-Axial Induction Magnetometers", 《IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT》, vol. 60, no. 10, 31 October 2011 (2011-10-31) * |
| JUE CHEN等: "Designs and Characterizations of Soft Magnetic Flux Guides in a 3-D Magnetic Field Sensor", 《IEEE TRANSACTIONS ON MAGNETICS》, vol. 48, no. 4, 30 April 2012 (2012-04-30), pages 1481 - 1484 * |
| 杨茂盛: "捷联三轴磁传感器研制及其罗差修正研究", 《中国学位论文全文数据库》, 26 September 2005 (2005-09-26) * |
Cited By (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103267520A (en) * | 2013-05-21 | 2013-08-28 | 江苏多维科技有限公司 | Three-axis digital compass |
| CN103267520B (en) * | 2013-05-21 | 2016-09-14 | 江苏多维科技有限公司 | A kind of three axle digital compasses |
| WO2014190909A1 (en) * | 2013-05-28 | 2014-12-04 | 江苏多维科技有限公司 | Three-axis digital compass |
| JP2016521845A (en) * | 2013-05-28 | 2016-07-25 | 江▲蘇▼多▲維▼科技有限公司Ｍｕｌｔｉｄｉｍｅｎｓｉｏｎ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． | 3-axis digital compass |
| US9797721B2 (en) | 2013-05-28 | 2017-10-24 | MultiDimension Technology Co., Ltd. | Three-axis digital compass |
| CN103323795A (en) * | 2013-06-21 | 2013-09-25 | 中国人民解放军国防科学技术大学 | Integrated three-axis magnetic sensor |
| CN103323795B (en) * | 2013-06-21 | 2015-04-08 | 中国人民解放军国防科学技术大学 | Integrated three-axis magnetic sensor |
| CN104280696A (en) * | 2013-07-03 | 2015-01-14 | 上海矽睿科技有限公司 | Three-axis sensor and manufacturing process thereof |
| CN104459576A (en) * | 2013-09-24 | 2015-03-25 | 上海矽睿科技有限公司 | Magnetic sensing device and magnetic induction method and manufacturing process of magnetic sensing device |
| CN104914385A (en) * | 2014-03-10 | 2015-09-16 | 上海矽睿科技有限公司 | Magnetic sensing device and manufacturing method thereof |
| CN106483479A (en) * | 2015-08-31 | 2017-03-08 | 张庆瑞 | Single bridges magnetic field sensor |
| JPWO2017204151A1 (en) * | 2016-05-24 | 2019-03-22 | Tdk株式会社 | Magnetic sensor |
| CN108254706B (en) * | 2016-12-29 | 2021-02-09 | 意法半导体股份有限公司 | MEMS triaxial magnetic sensor with improved configuration |
| US10705158B2 (en) | 2016-12-29 | 2020-07-07 | Stmicroelectronics S.R.L. | MEMS triaxial magnetic sensor with improved configuration |
| CN108254706A (en) * | 2016-12-29 | 2018-07-06 | 意法半导体股份有限公司 | MEMS magnetic sensors with improvement configuration |
| CN108627782B (en) * | 2017-03-24 | 2020-12-11 | Tdk株式会社 | Magnetic sensor |
| CN108627782A (en) * | 2017-03-24 | 2018-10-09 | Tdk株式会社 | Magnetic sensor |
| CN111190126B (en) * | 2017-06-09 | 2022-06-07 | 温州大学 | Preparation method of MEMS magnetic field sensor adopting folded beam structure |
| CN111190126A (en) * | 2017-06-09 | 2020-05-22 | 合肥工业大学 | MEMS magnetic field sensor adopting folded beam structure, preparation process and application |
| CN107894576B (en) * | 2017-10-27 | 2019-11-29 | 中国人民解放军国防科技大学 | Integrated low-power-consumption three-axis magnetic field sensor with high Z-direction resolution |
| CN107894576A (en) * | 2017-10-27 | 2018-04-10 | 中国人民解放军国防科技大学 | Integrated low-power-consumption three-axis magnetic field sensor with high Z-direction resolution |
| CN108919147A (en) * | 2018-06-22 | 2018-11-30 | 钱正洪 | A kind of triaxial magnetic field sensor |
| CN109061528A (en) * | 2018-08-02 | 2018-12-21 | 华中科技大学 | A kind of three axial plane Magnetic Sensors based on giant magnetoresistance effect |
| CN109061528B (en) * | 2018-08-02 | 2020-08-18 | 华中科技大学 | Three-axis planar magnetic sensor based on giant magneto-impedance effect |
| WO2020173086A1 (en) * | 2019-02-25 | 2020-09-03 | 歌尔微电子有限公司 | Mems sensor and electronic device |
| CN110286340A (en) * | 2019-06-13 | 2019-09-27 | 中国人民解放军国防科技大学 | Serial-type triaxial integration magnetic sensor |
| CN110286340B (en) * | 2019-06-13 | 2021-04-09 | 中国人民解放军国防科技大学 | Serial-type triaxial integration magnetic sensor |
| CN110646852A (en) * | 2019-08-29 | 2020-01-03 | 中国地质大学（武汉） | Low-power-consumption security inspection detection system and method based on MEMS weak magnetic sensor array |
| CN111044951A (en) * | 2019-11-27 | 2020-04-21 | 北京航空航天大学青岛研究院 | Three-axis magnetic field sensor and manufacturing method thereof |
| CN110927637A (en) * | 2019-11-30 | 2020-03-27 | 北京航空航天大学青岛研究院 | Three-axis MTJ magnetic field sensor and preparation method thereof |
| CN111007442A (en) * | 2019-12-09 | 2020-04-14 | 中国科学院电子学研究所 | MEMS resonant magnetoresistive sensor for improving resolution of low-frequency magnetic field |
| CN111624525A (en) * | 2020-05-26 | 2020-09-04 | 中国人民解放军国防科技大学 | Integrated three-axis magnetic sensor for suppressing magnetic noise by utilizing magnetic stress regulation and control |
| CN111624525B (en) * | 2020-05-26 | 2022-06-14 | 中国人民解放军国防科技大学 | Integrated three-axis magnetic sensor for suppressing magnetic noise by utilizing magnetic stress regulation and control |
| CN114114102A (en) * | 2021-11-18 | 2022-03-01 | 中国人民解放军国防科技大学 | Integrated planar three-axis magnetic sensor and application method thereof |
| CN114114102B (en) * | 2021-11-18 | 2024-01-23 | 中国人民解放军国防科技大学 | Integrated planarization triaxial magnetic sensor and application method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103116143B (en) | 2015-01-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103116143B (en) | Integrated high-accuracy triaxial magnetic sensor | |
| CN103116144B (en) | Z-direction magnetic field sensor with magnetic orbit structure | |
| CN103323795B (en) | Integrated three-axis magnetic sensor | |
| US10353020B2 (en) | Manufacturing method for integrated multilayer magnetoresistive sensor | |
| CN102116851B (en) | Integrated triaxial magnetometer of semiconductor material manufactured in MEMS technology | |
| CN103105592B (en) | Single-chip three-shaft magnetic field sensor and production method | |
| CN102859382A (en) | Integrated magnetometer and its manufacturing process | |
| US9810748B2 (en) | Tunneling magneto-resistor device for sensing a magnetic field | |
| KR20150102053A (en) | Magnetic Sensing Device and Magnetic Sensing Method Therefor | |
| CN103901363A (en) | Single-chip Z-axis linear magneto-resistive sensor | |
| US10168398B2 (en) | Magnetic field sensing apparatus | |
| CN107894576B (en) | Integrated low-power-consumption three-axis magnetic field sensor with high Z-direction resolution | |
| KR20150102052A (en) | Magnetic Sensing Apparatus, Magnetic Induction Method and Preparation Technique Therefor | |
| CN102914394B (en) | MEMS (Micro Electro Mechanical System) giant magneto-resistance type high pressure sensor | |
| CN203480009U (en) | Single-chip Z-axis linear magneto-resistor sensor | |
| CN103576101A (en) | Multi-channel integrated type magnetic sensor | |
| CN103323794A (en) | GMR-MEMS integrated weak magnetic sensor adopting plane micro-coil | |
| CN202853817U (en) | MEMS tunnel magnetic resistance height pressure transducer | |
| CN112083211A (en) | Current sensor | |
| CN104218147A (en) | Magnetic sensor preparation method and magnetic sensor | |
| CN202853815U (en) | MEMS colossal magneto-resistance type height pressure transducer | |
| US9581661B2 (en) | XMR-sensor and method for manufacturing the XMR-sensor | |
| CN110286340B (en) | Serial-type triaxial integration magnetic sensor | |
| CN102928132B (en) | Tunnel reluctance pressure transducer | |
| CN210665858U (en) | Large-dynamic-range magnetic sensor assembly |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |