CN102279373A - Uniaxially electrostatic-driven sensor for weak magnetic field measurement - Google Patents
Uniaxially electrostatic-driven sensor for weak magnetic field measurement Download PDFInfo
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- CN102279373A CN102279373A CN2011101955158A CN201110195515A CN102279373A CN 102279373 A CN102279373 A CN 102279373A CN 2011101955158 A CN2011101955158 A CN 2011101955158A CN 201110195515 A CN201110195515 A CN 201110195515A CN 102279373 A CN102279373 A CN 102279373A
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Abstract
The invention provides a uniaxially electrostatic-driven sensor for weak magnetic field measurement. The sensor comprises an insulating substrate, a pair of electrostatic driving electrodes, two pairs of input and output electrodes, a giant magnetoresistive (GMR) sensitive element, two same magnetic line collectors, a micro-cantilever, and a modulated film. The insulating substrate is plated with an electrode and a shallow groove is etched on the insulating substrate. The GMR sensitive element and the two magnetic line collectors are fixed on the surface of the insulating substrate as well as the central axises of the GMR sensitive element and the two magnetic line collectors are formed into a straight line. The micro-cantilever employs a conductive silicon chip for manufacture and comprises a pedestal and a cantilever, wherein the pedestal is fixed on the insulating substrate and is connected with the cantilever and the modulated film is prepared on a lower surface of an upwarp end of the cantilever. A vertical distance from the modulated film to the GMR sensitive element is 8 to 15 micrometers. According to the sensor for weak magnetic field measurement provided in the invention, a modulation depth is great; a resolution is high; and the structure and the technology of the sensor are simple.
Description
Technical field
The present invention relates to sensor technical field,, specifically, relate to a kind of uniaxial magnetic quantity sensor that is used to measure Weak magentic-field especially for the sensor of feeble signal.
Background technology
Weak magentic-field is measured and all is widely used in fields such as earth-magnetic navigation, target detection, geologic prospecting, biomedicines.It is more that present stage is used for Weak magentic-field measured sensor type, mainly comprise fluxgate sensor, optical pumping formula Magnetic Sensor, proton formula Magnetic Sensor, optical fiber Magnetic Sensor, giant magnetic impedance Magnetic Sensor, GMR (Giant Magnetoresistive, giant magnetoresistance) Magnetic Sensor etc., wherein the GMR Magnetic Sensor is based on that microelectronic technique makes, and the Magnetic Sensor of comparing other types obviously has characteristics such as volume is little, low in energy consumption, easy batch process.
1988, the experiment group that French scientist Albert Fert and Germany scientist Peter Grunberg lead has separately successively independently found the GMR effect, wherein Albert Fert experiment group study finds that the resistance value of iron-chromium multilayer film sharply changes in Weak magentic-field, and with this phenomenon called after " GMR effect ", and Peter Grunberg group has also found similar experimental phenomena in iron-chromium-three layers of antiferromagnet film structure of iron.After this just launched in high gear at the GMR Study on Effect, the new construction with GMR effect constantly presents, and the structure with GMR effect also is referred to as the GMR sensitive element.Along with deepening continuously of research, the magnetic field sensitivity that it is found that the GMR sensitive element is high more, its noise particularly 1/f noise is also big more, and the 1/f magnetic noise that wherein depends on the inner magnet structure can't be suppressed by the electrical modulation method of routine, and this point has limited the raising of GMR Magnetic Sensor resolving power just.
In recent years carried out big quantity research for the problem that how effectively to suppress the 1/f noise of GMR sensitive element abroad, wherein used micro mechanical structure to drive thin magnetic film and modulate tested low frequency Weak magentic-field to suppress the technical scheme of GMR sensitive element 1/f noise the most feasible.The breadboard Alan S.Edelstein of AUS etc. has obtained 4 relevant American National patents (patent No.: US6670809 successively between 2003 to 2007, US7046002, US7185541, US7195945), the common feature of technical scheme is described in these patents: at first magnetic line of force collector is prepared on micro mechanical structure, utilize the static driven mode to drive micro mechanical structure and the common dither of magnetic line of force collector then, the magnetic field enlargement factor of magnetic line of force collector periodically changes thereupon, be in this moment GMR sensitive element in the magnetic line of force collector gap may detect after the high frequency modulated by measuring magnetic field.Though this type of technical scheme can effectively suppress the 1/f noise of GMR sensitive element, and obviously improve the low frequency magnetic field resolving power of GMR Magnetic Sensor, but its structure relative complex, manufacture craft relates to deep reaction ion etching technology and Silicon-On-Insulator technology, whole process wastes time and energy, cost is very high, and depth of modulation also lower (about 14%) is unfavorable for further improving the magnetic field resolving power in addition.
Summary of the invention
The present invention will provide a kind of depth of modulation bigger, and resolving power is higher, the simple weak magnetic measurement sensor of structural manufacturing process.
Technical scheme of the present invention is: a kind of weak magnetic measurement sensor of single shaft static driven comprises dielectric base, a pair of electrostatic drive electrodes, the two pairs of input and output electrodes, GMR sensitive element, two identical magnetic line of force collectors, micro-cantilever, modulation film.Described dielectric base adopts the glass sheet of surface finish, is coated with two pairs of input and output electrodes and a pair of electrostatic drive electrodes on the dielectric base; Dielectric base central authorities are etched with a shallow slot, and shallow slot one end extends to the dielectric base edge; The a certain utmost point of electrostatic drive electrodes is plated in the shallow slot, and extends to the dielectric base edge, and another utmost point is electrically connected with micro-cantilever.Described GMR sensitive element is fine strip shape, and its upper face center has a horizontal gap.Each magnetic line of force collector one end has " recessed " shape groove, and " recessed " shape well width is slightly wideer than GMR sensitive element.GMR sensitive element and two magnetic line of force collectors all are fixed on the insulating base surface, and GMR sensitive element two ends lay respectively in " recessed " shape groove of magnetic line of force collector, and GMR sensitive element and two these three axis of magnetic line of force collector are in line.Two pairs of input and output electrodes are connected with two pairs of input and output electrodes of GMR sensitive element respectively.Micro-cantilever adopts conductive silicon chip to make, and comprises pedestal and cantilever.Pedestal is fixed on the dielectric base, and pedestal connects cantilever, cantilever be positioned at shallow slot be coated with electrostatic drive electrodes directly over, have some damping holes on the cantilever; Cantilever free end upwarps, and upwarps end and has two mating holes, upwarps between two mating holes of end lower surface to prepare the modulation film that the high magnetic permeability soft magnetic material is arranged; The modulation film is over against the gap of GMR sensitive element, and the shape of modulation film is identical with the surface configuration in gap, and modulation film and GMR sensitive element vertical range are determined according to actual needs, usually at 8～15 microns.
The invention has the beneficial effects as follows: the modulation system that adopts the modulation film directly over the GMR sensitive element, to vibrate, can make modulation vibration of membrane amplitude relatively large, therefore the depth of modulation that obtains is big (emulation experiment proves greater than 40%), making faint D.C. magnetic field by the modulation of modulating film is high-frequency alternating magnetic field at GMR sensitive element place, the 1/f noise that has suppressed the GMR element, by adopting magnetic line of force collector to make Weak magentic-field obtain amplification, thereby the Magnetic Sensor measurement resolution is greatly improved (the emulation experiment proof has improved two orders of magnitude) at GMR sensitive element place; Micro cantilever structure is simple, and is easily manufactured, effectively reduces the cost of manufacture of sensor.
Description of drawings
Fig. 1 is the structural representation of the single shaft static driven weak magnetic measurement sensor that provides of a certain embodiment of the present invention;
Fig. 2 is the dielectric base synoptic diagram in a certain embodiment of the present invention;
Fig. 3 is the bar shaped magnetic line of force collector in a certain embodiment of the present invention and the package assembly synoptic diagram of GMR sensitive element;
Fig. 4 (a) is the vertical view of micro-cantilever in a certain embodiment of the present invention;
Fig. 4 (b) is the upward view of micro-cantilever in a certain embodiment of the present invention;
Fig. 4 (c) is the side view of micro-cantilever in a certain embodiment of the present invention.
The 1-pedestal, the 2-cantilever, 3-modulates film, 4-step one, 5-damping hole, 6-step two, the 7-mating holes, 8-dielectric base, 9-shallow slot, 11-a and 11-b-electrostatic drive electrodes are right, and 12-a and 12-b-input and output electrode are to one, and 13-a and 13-b-input and output electrode are to two, the 14-GMR sensitive element, 15-magnetic line of force collector, 16-gap, 17-micro-cantilever.
Embodiment
The invention will be further described below in conjunction with accompanying drawing.
Fig. 1 is the structural representation of the single shaft static driven weak magnetic measurement sensor that provides of a certain embodiment of the present invention.As shown in the figure, this embodiment comprises dielectric base 8, a pair of electrostatic drive electrodes 11-a and 11-b, the two couples of input and output electrode 12-a and 12-b, 13-a and 13-b, GMR sensitive element 14, two identical magnetic line of force collectors 15, micro-cantilever 17, modulation film 3 (see figure 4)s.Described dielectric base 8 adopts the glass sheet of surface finish, is coated with two couples of input and output electrode 12-a and 12-b, 13-a and 13-b on the glass sheet, a pair of electrostatic drive electrodes 11-a and 11-b; Dielectric base 8 central authorities are etched with a shallow slot 9, and shallow slot one end extends to the dielectric base edge; The 11-b utmost point of electrostatic drive electrodes is plated in the shallow slot 9, and the 11-a utmost point of electrostatic drive electrodes is electrically connected with micro-cantilever 17.Described GMR sensitive element 14 is fine strip shape, and its upper face center has horizontal gap 16 (see figure 3)s; Each magnetic line of force collector 15 1 end has " recessed " shape groove, and " recessed " shape well width is than the slightly wide (see figure 3) of GMR sensitive element 14; GMR sensitive element 14 and two magnetic line of force collectors 15 are all fixed (as adopting epoxide-resin glue bonding) on insulating base 8 surfaces, and GMR sensitive element 14 two ends lay respectively in " recessed " shape groove of a magnetic line of force collector 15, and GMR sensitive element 14 and two magnetic line of force collector 15 these three axis are (see figure 3) in line.Two pairs of input and output electrodes are connected with two pairs of input and output electrodes of GMR sensitive element 14 respectively.On dielectric base 8, pedestal 1 connects cantilever 2 to the pedestal 1 of micro-cantilever 17 fixing (as with the bonding or low-temperature bonding of epoxy gas resin glue), and cantilever 2 is directly over shallow slot 9; Have some damping holes 5 (seeing Fig. 4 (b)) on the cantilever 2; Cantilever 2 free ends upwarp (seeing Fig. 4 (a)), and promptly the end away from pedestal upwarps; Upwarp end and have two mating holes 7, upwarp the modulation film 3 (seeing Fig. 4 (c)) that preparation has the high magnetic permeability soft magnetic material to prepare between two mating holes 7 of end lower surface; Modulation film 3 be positioned at GMR sensitive element 14 gap 16 directly over, the shape of modulation film 3 is identical with the surface configuration in gap 16, modulation film 3 and GMR sensitive element 14 vertical ranges are as required usually at 8～15 microns.
Fig. 2 is the dielectric base synoptic diagram in a certain embodiment of the present invention.As shown in the figure: dielectric base 8 adopts the polished glass sheet to make, and its profile is not limited to rectangle shown in Figure 2; Dielectric base 8 central photoetching corrosions have shallow slot 9, shape is not limited to " T " font shown in Figure 2, the 11-b utmost point that can hold electrostatic drive electrodes in the shallow slot 9 promptly meets the demands, corrosive liquid is selected glass erosion liquids such as diluted hydrofluoric acid for use, corrosion depth determines that according to required electrostatic force size the big more corrosion depth of required electrostatic force is shallow more; The 11-a utmost point of electrostatic drive electrodes is made up of two small electrodes; Input and output electrode is shown in Figure 2 to shape and the neither limit of particular location of 12-a and 12-b, 13-a and 13-b, and satisfied can the electrical connection with GMR sensitive element 14 gets final product; All electrode pairs adopt first sputter (or vacuum evaporation, plating etc.) conductive film layer (gold, aluminium, copper etc.) on the dielectric base 8, and the technology of photoetching corrosion prepares moulding again.
Fig. 3 is the magnetic line of force collector in a certain embodiment of the present invention and the package assembly synoptic diagram of GMR sensitive element.As shown in the figure: GMR sensitive element 14 adopts commercially available prod (as the AA002-02 of NVE), and GMR sensitive element 14 is slice shape, and upper face center has a horizontal gap 16; Magnetic line of force collector 15 is made (as NiFe, CoZrNb etc.) by the high magnetic permeability soft magnetic material, and it is shaped as rectangle (or trapezoidal etc.), and an end has " recessed " shape groove; GMR sensitive element 14 is between two magnetic line of force collectors 15, and GMR sensitive element 14 two ends are embedded in " recessed " shape groove of two magnetic line of force collectors 15, and this three axis in line.
Fig. 4 (a)～Fig. 4 (c) is vertical view, upward view and the side view of micro-cantilever in a certain embodiment of the present invention.As shown in the figure: micro-cantilever 17 is made by micromachined technology by silicon chip, comprises pedestal 1, cantilever 2.Pedestal 1 is not limited only to " recessed " shape, the arbitrary shape that satisfies supporting cantilever 2 all can, pedestal 1 links to each other with cantilever 2; Cantilever 2 has several damping holes 5 along its length, and the damping hole number can be 3～5; Cantilever 2 free ends upwarp, and upwarping the end place has step 6, and cantilever 2 upwarps end and has two mating holes 7; Cantilever 2 upwarps to prepare between two mating holes 7 of end lower surface modulation film 3; Modulation film 3 is made (as NiFe, CoZrNb etc.) by the high magnetic permeability soft magnetic material, be rectangle along cantilever 2 axis directions, the preparation method upwarps the end lower surface at cantilever 2 earlier to electroplate (or vacuum evaporation, sputter etc.) one deck high magnetic permeability soft magnetic material film, again by the lithography corrosion process moulding.
During use, the exciting circuit of a pair of electrostatic drive electrodes with the outside is connected, makes semi-girder be operated in resonant condition; A pair of input and output electrode is connected with outside constant voltage source (or current source), and a pair of input and output electrode is connected with outer detecting circuit, can obtain the size of low-intensity magnetic field according to the measured value of outer detecting circuit.
Claims (2)
1. the weak magnetic measurement sensor of a single shaft static driven, comprise dielectric base (8), a pair of electrostatic drive electrodes (11-a, 11-b), two pairs of input and output electrodes (12-a and 12-b, 13-a and 13-b), GMR sensitive element (14), two identical magnetic line of force collectors (15), micro-cantilever (17), modulation film (3), it is characterized in that, described dielectric base (8) adopts the glass sheet of surface finish, is coated with two pairs of input and output electrodes and a pair of electrostatic drive electrodes on the dielectric base (8); Dielectric base (8) central authorities are etched with a shallow slot (9), and shallow slot (9) one ends extend to dielectric base (8) edge; The a certain utmost point of electrostatic drive electrodes (11-a, 11-b) is plated in the shallow slot (9), and extends to dielectric base (8) edge, and another utmost point is electrically connected with micro-cantilever (17); Described GMR sensitive element (14) is fine strip shape, and its upper face center has a horizontal gap (16); Each magnetic line of force collector (15) one end has " recessed " shape groove, and " recessed " shape well width is slightly wideer than GMR sensitive element (14); GMR sensitive element (14) and two magnetic line of force collectors (15) all are fixed on insulating base (8) surface, and GMR sensitive element (14) two ends lay respectively in " recessed " shape groove of magnetic line of force collector (15), and GMR sensitive element (14) and this three axis of two magnetic line of force collectors (15) are in line; Two pairs of input and output electrodes are connected with two pairs of input and output electrodes of GMR sensitive element (14) respectively; Micro-cantilever (17) adopts conductive silicon chip to make, and comprises pedestal (1) and cantilever (2); Pedestal (1) is fixed on the dielectric base (8), and pedestal (1) connects cantilever (2), cantilever (2) be positioned at shallow slot (9) be coated with electrostatic drive electrodes directly over, have some damping holes (5) on the cantilever (2); Cantilever (2) free end upwarps, and upwarps end and has two mating holes (7), upwarps to prepare the modulation film (3) that the high magnetic permeability soft magnetic material is arranged between end two mating holes of lower surface (7); Modulation film (3) is over against the gap of GMR sensitive element (14), and the shape of modulation film (3) is identical with the surface configuration in the gap (16) of GMR sensitive element (14).
2. the weak magnetic measurement sensor of single shaft static driven according to claim 1, the scope that it is characterized in that modulating film (3) and GMR sensitive element (14) vertical range is 8 to 15 microns.
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| CN 201110195515 CN102279373B (en) | 2011-07-13 | 2011-07-13 | Uniaxially electrostatic-driven sensor for weak magnetic field measurement |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103116144A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Z-direction magnetic field sensor with magnetic orbit structure |
| CN103116143A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Integrated high-accuracy triaxial magnetic sensor |
| CN106443525A (en) * | 2016-11-17 | 2017-02-22 | 中国科学院上海微系统与信息技术研究所 | Torsion-type micro mechanical magnetic field sensor and preparation method thereof |
| CN106646278A (en) * | 2016-12-09 | 2017-05-10 | 中国人民解放军国防科学技术大学 | Low-noise MEMS pre-amplification device utilizing high-resolution magnetic field detection |
| CN107894577A (en) * | 2017-10-27 | 2018-04-10 | 中国人民解放军国防科技大学 | Weak magnetic sensor for inhibiting 1/f noise by regulating and controlling magnetic moment by electric field and application method thereof |
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| US6670809B1 (en) * | 2000-08-18 | 2003-12-30 | The United States Of America As Represented By The Secretary Of The Army | Magnetic sensor with modulating flux concentrator having minimized air resistance for 1/f noise reduction |
| CN101755210A (en) * | 2007-07-20 | 2010-06-23 | 皇家飞利浦电子股份有限公司 | Magnetic sensor device |
| WO2010122919A1 (en) * | 2009-04-22 | 2010-10-28 | アルプス電気株式会社 | Magnetic sensor |
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| US6670809B1 (en) * | 2000-08-18 | 2003-12-30 | The United States Of America As Represented By The Secretary Of The Army | Magnetic sensor with modulating flux concentrator having minimized air resistance for 1/f noise reduction |
| WO2003107025A1 (en) * | 2002-06-14 | 2003-12-24 | Honeywell International Inc. | Dual axis magnetic sensor |
| CN101755210A (en) * | 2007-07-20 | 2010-06-23 | 皇家飞利浦电子股份有限公司 | Magnetic sensor device |
| WO2010122919A1 (en) * | 2009-04-22 | 2010-10-28 | アルプス電気株式会社 | Magnetic sensor |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103116144A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Z-direction magnetic field sensor with magnetic orbit structure |
| CN103116143A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Integrated high-accuracy triaxial magnetic sensor |
| CN103116143B (en) * | 2013-01-22 | 2015-01-14 | 中国人民解放军国防科学技术大学 | Integrated high-accuracy triaxial magnetic sensor |
| CN103116144B (en) * | 2013-01-22 | 2015-01-14 | 中国人民解放军国防科学技术大学 | Z-direction magnetic field sensor with magnetic orbit structure |
| CN106443525A (en) * | 2016-11-17 | 2017-02-22 | 中国科学院上海微系统与信息技术研究所 | Torsion-type micro mechanical magnetic field sensor and preparation method thereof |
| CN106646278A (en) * | 2016-12-09 | 2017-05-10 | 中国人民解放军国防科学技术大学 | Low-noise MEMS pre-amplification device utilizing high-resolution magnetic field detection |
| CN106646278B (en) * | 2016-12-09 | 2019-05-24 | 中国人民解放军国防科学技术大学 | A kind of low noise MEMS preamplifier part using high resolution detection of magnetic field |
| CN107894577A (en) * | 2017-10-27 | 2018-04-10 | 中国人民解放军国防科技大学 | Weak magnetic sensor for inhibiting 1/f noise by regulating and controlling magnetic moment by electric field and application method thereof |
| CN107894577B (en) * | 2017-10-27 | 2019-11-29 | 中国人民解放军国防科技大学 | Weak magnetic sensor for inhibiting 1/f noise by regulating and controlling magnetic moment by electric field and application method thereof |
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