CN201935997U - Magnetic field sensor chip - Google Patents
Magnetic field sensor chip Download PDFInfo
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- CN201935997U CN201935997U CN2010202888397U CN201020288839U CN201935997U CN 201935997 U CN201935997 U CN 201935997U CN 2010202888397 U CN2010202888397 U CN 2010202888397U CN 201020288839 U CN201020288839 U CN 201020288839U CN 201935997 U CN201935997 U CN 201935997U
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- magnetic field
- signal
- hall element
- magnetoresistive transducer
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Abstract
The utility model discloses a magnetic field sensor chip, which comprises a magnetoresistive sensor, a Hall sensor and a control integrated circuit, wherein the control integrated circuit and the Hall sensor are positioned on the same layer; the control integrated circuit is arranged around the Hall sensor; the control integrated circuit is used for receiving output signals of the magnetoresistive sensor and the Hall sensor, and can comprise a power supply biasing circuit, a signal processing circuit, a time sequence control circuit and a signal gating circuit; and the magnetoresistive sensor can be produced on a passivation isolating layer. The magnetic field sensor disclosed by the utility model can be used for detecting the three-axle all-round magnetic field change and has the characteristics of low power consumption, small area, high sensitivity, strong anti-jamming capability, stable output waveform and the like.
Description
Technical field
The utility model relates generally to magnetic field sensor, particularly a kind of single chip integrated three omnidirectional's magnetic field sensor chips.
Background technology
As shown in Figure 1, magnetoresistive transducer detects the changes of magnetic field that is parallel to the sensing element direction.In the anisotropic magnetoresistive electric bridge sensor, membraneous material with magnetoresistance is produced on (substrate can be insulating material such as semiconductor materials such as silicon, germanium silicon, gallium arsenide or silicon dioxide) on the substrate with different shapes, with intensity and the direction that detects this terrestrial magnetic field.Usually, magnetoresistive transducer adopts thin film alloys, and it is a kind of ferrimag that comprises nickel and iron.The bridge structure of magnetoresistive transducer adopts constant voltage or current offset, and when the size of external magnetic field or direction changed, the resistance of sensor can correspondingly change, and the change of resistance can cause the voltage drop at resistance two ends to change.Therefore, just can measure the variation of external magnetic field indirectly by the variation that detects this voltage drop.Magnetoresistive transducer also can the detection of vertical direction changes of magnetic field, but inductive effects is not good.The hysteresis characteristic of magnetoresistive transducer and characteristic linearity depend on basically and apply the homogeneity of the action of a magnetic field in conductor, early stage magnetoresistive transducer does not contain and is used to realize the magnetic field any measure of stepless action on conductor as far as possible, discloses a kind of magnetoresistive transducer structure of using shielding strip structure decrease hysteresis and improving the linearity among China patent CN100420953C.This sensor can only detect the magnetic direction that is parallel to sensor equally.
As shown in Figure 2, the Hall element detection of vertical is in the changes of magnetic field of sensing element direction.The Hall effect of the main based semiconductor material of its principle of work.When Control current is passed through at the wafer two ends, if on its vertical direction, apply magnetic field, then will on direction, produce electric potential difference perpendicular to electric current and H plane, by detecting this electric potential difference, can infer the variation of external magnetic field.The principle of work of Hall element has determined this sensor can't detect the magnetic field that is parallel on the sensing element direction.Because the manufacturing process of Hall element is consistent with the standard integrated circuit fabrication process, U.S. Pat 5627398 has proposed to make in a kind of CMOS integrated circuit the method for Hall element, this sensor equally can only detection of vertical in the magnetic direction of sensor.
The utility model content
Technical problem to be solved in the utility model provides a kind of magnetic field sensor, can detect parallel simultaneously and magnetic field vertical direction.
For solving the problems of the technologies described above, the technical solution of the utility model is as follows:
A kind of magnetic field sensor chip comprises: magnetoresistive transducer; Hall element; Control integrated circuit, described control integrated circuit and described Hall element are in same one deck, and around described Hall element, described control integrated circuit receives and handle the output signal of described magnetoresistive transducer and Hall element.
Described control integrated circuit comprises electric power bias circuit and signal processing circuit; Described electric power bias circuit is to described magnetoresistive transducer and Hall element output offset signal, to open or to close described magnetoresistive transducer and Hall element; Described signal processing circuit receives and handles the described output signal of described magnetoresistive transducer and Hall element.
Described control integrated circuit can further comprise sequential control circuit and signal gating circuit; Described sequential control circuit is to described electric power bias circuit output offset control signal, and described bias control signal is controlled the described offset signal of described electric power bias circuit output; Described magnetoresistive transducer and Hall element are to described signal gating circuit output output signal separately; Described sequential control circuit is to described signal gating circuit and signal processing circuit output gating control signal, described gating control signal is controlled described signal gating circuit and is exported one of output signal of described magnetoresistive transducer and Hall element, and controls described signal processing circuit and handle this output signal of being exported by described signal gating circuit.
Described magnetic field sensor chip also comprises at described magnetoresistive transducer and described with the passivation separation layer between one deck.
Described passivation separation layer is provided with contact hole, and described magnetoresistive transducer has connecting line, and described magnetoresistive transducer is electrically connected with described control integrated circuit by described connecting line and contact hole.
Described Hall element is positioned at the center of described control integrated circuit.
Described Hall element is symmetrical structure.
Described magnetoresistive transducer is the Wheatstone bridge that the serpentine conductor structure constitutes, and adjacent described conductor structure is perpendicular to one another.
The other shielding strip that is provided with of described conductor structure.
Magnetic field sensor chip of the present utility model integrates magnetoresistive transducer, Hall element and control integrated circuit, makes full use of magnetoresistive transducer and Hall element characteristics separately, can detect three omnidirectional's changes of magnetic field.It can be applied to magnetoresistive transducer and Hall element field simultaneously, and single chip integrated characteristic makes it can save physical space to greatest extent on using.Because the internal control integrated circuit has adopted novel pulsed bias, signal read circuit gating technology of sharing, make that magnetic field sensor power consumption of the present utility model is lower, area is littler simultaneously.With respect to traditional single type magnetoresistive transducer or Hall element, the utility model also has better sensitivity, stronger antijamming capability and more stable advantages such as output waveform.
Description of drawings
Fig. 1 is the synoptic diagram of traditional magnetoresistive transducer magnetic direction that can detect;
Fig. 2 is the synoptic diagram of traditional Hall element magnetic direction that can detect;
Fig. 3 is the one-piece construction synoptic diagram of chip of the present utility model;
Fig. 4 is the diagrammatic cross-section of Hall element of the present utility model;
Fig. 5 is the domain synoptic diagram of Hall element of the present utility model;
Fig. 6 is the structural representation of magnetoresistive transducer of the present utility model;
Fig. 7 is the equivalent circuit diagram of the magnetoresistive transducer of Fig. 6;
Fig. 8 is the hysteresis characteristic curve of magnetoresistive transducer of the present utility model;
Fig. 9 is that the family curve of magnetoresistive transducer of the present utility model and general magnetoresistive transducer compares;
Figure 10 is a Circuits System block diagram of the present utility model;
Consumed current size when Figure 11 shows chip operate as normal of the present utility model;
Figure 12 is the synoptic diagram of the chip of the present utility model magnetic direction that can detect, and this chip optional position in magnetic field can both effectively be detected.
Embodiment
According to Fig. 3-12, provide preferred embodiment of the present utility model, and described in detail below, enable to understand better function of the present utility model, characteristics.
Figure 3 shows that one-piece construction figure of the present utility model, sensing system is produced on the Semiconductor substrate 13.This sensing system comprises Hall element 11, control integrated circuit 12 and magnetoresistive transducer 7, wherein, control integrated circuit 12 is in same one deck with Hall element 11, and around Hall element 11, control integrated circuit 12 receives and handles the output signal of magnetoresistive transducer 7 and Hall element 11.
The manufacture craft of Hall element 11 and control integrated circuit 12 can be traditional silicon technology, SOI technology, germanium silicon technology or GaAs technology etc.Look the difference of manufacture craft, Semiconductor substrate 13 can be the semiconductor material that silicon, gallium arsenide, germanium silicon etc. can be produced Hall element 11 and control integrated circuit 12.Because the manufacturing process of Hall element is compatible mutually with traditional integrated circuit fabrication process, therefore, Hall element 11 and control integrated circuit 12 are produced on same one deck, it is integrated circuit layer, and control integrated circuit 12 is centered around around the Hall element 11, preferably Hall element 11 is arranged in the center of integrated circuit aspect.Magnetoresistive transducer 7 is produced on the passivation separation layer 10 on the integrated circuit layer.Passivation separation layer 10 is provided with contact hole 9, and magnetoresistive transducer 7 has connecting line 8, and magnetoresistive transducer 11 is electrically connected with control integrated circuit 12 by connecting line 8 and contact hole 9.The sensing system that making finishes is by outer enclosure 14 encapsulation.
Fig. 4 is the diagrammatic cross-section of Hall element 11 of the present utility model.It adopts semiconductor integrated circuit technique to make and control integrated circuit 12 manufacture craft compatibilities, does not need to increase extra cost.Wherein: metal level 15 flows into or outflow end as the electric current of Hall element 11; The P isolation is shown in 16; High concentration N doped region is shown in 17; The SiO2 isolation is shown in 18; N trap 19 is as the Hall material.Limited by sectional view, do not mark out the voltage output end of Hall element 11 among the figure.
Fig. 5 is the domain synoptic diagram of Hall element 11 in the utility model.Wherein: on behalf of the electric current of hall device, Bias+ and Bias-flow into end and electric current outflow end, i.e. metal level among Fig. 4 15 respectively; VH+ and VH-represent the high output voltage end and the low output voltage end of Hall element 11 respectively.Domain adopts the high precision symmetrical structure, can reduce the DC offset voltage of structure asymmetry drawing-in system to greatest extent.
After passivation separation layer 10 is made the technology planarizing process, above passivation separation layer 10, make the magnetoresistive transducer electric bridge.
The utility model uses cold cloudy sputter to prepare the method for film, prepares magnetic resistance by magnetically controlled DC sputtering, ion beam milling instrument.Select the anisotropic magnetoresistance membraneous material as magnetoresistance material, its structure is NiFeCr/NiFe (film thickness is at Nano grade), and magnetoresistive ratio is up to 3% when NiFe layer 20nm.Sheet resistance profile after completing as shown in Figure 6.
As shown in Figure 6, magnetoresistive transducer 7 comprises four snakelike conductor structures 2 that formed by magnetoresistance material and the screen layer 1 that forms the border of conductor structure.The adjacent conductor of each conductor structure 2 is electrically connected to form mutually in the example shown and is the branch of the circuit of Wheatstone bridge, and adjacent conductor structure 2 is perpendicular to one another.This Wheatstone bridge applies supply voltage by terminal 5,6, and is drawn two output voltages of magnetoresistive transducer 7 by terminal 3,4.
As shown in Figure 7,7 equivalences of the magnetoresistive transducer in the utility model are wheatstone bridge configuration.Four signal terminals 3,4,5 and 6 of magnetoresistive transducer 7 are used for being connected with control integrated circuit 12.Except that power supply voltage terminal 5 and power supply ground terminal 6, magnetoresistive transducer 7 also has two signal output terminals 3 and 4 output differential signals to enter control integrated circuit 12.The benefit of doing like this is except increasing signal amplitude, improving the sensor signal to noise ratio (S/N ratio) common mode crosstalk in the inhibition system to greatest extent.
Fig. 8 is the hysteresis characteristic curve between the field intensity H in the magnetic strength B that produces of the magnetoresistive transducer that adopts in the utility model 7 and magnetic field.This hysteresis characteristic curve is very precipitous, has clearly, reproducible hysteresis characteristic.
Fig. 9 be the magnetoresistive transducer 7 that adopts in the utility model with general magnetoresistive transducer at the family curve that applies the A of output voltage U separately under the identical field strength H.Wherein, S1 representative be the family curve of general magnetoresistive transducer, the S2 representative be the family curve of the magnetoresistive transducer 7 that adopts in the utility model.Magnetoresistive transducer 7 in the utility model adopts shielding strip 1 to guarantee that the characteristic of magnetic characteristic, particularly magnetic hysteresis, linearity and the sensitivity of each conductor structure 2 keeps identical, and is not subjected to the influence of manufacturing process.Obviously, the magnetoresistive transducer in the utility model 7 has better linearity.
The block diagram of entire circuit system as shown in figure 10.The electric power bias circuit of control integrated circuit 12 is to magnetoresistive transducer 7 and Hall element 11 output offset signals, to open or to close magnetoresistive transducer 7 and Hall element 11.This offset signal is two independently pulse signals, can open or close magnetoresistive transducer 7 and Hall element 11 in the different periods.The signal processing circuit of control integrated circuit 12 receives and handles the output signal of magnetoresistive transducer 7 and Hall element 11.
Preferably, control integrated circuit 12 also comprises sequential control circuit and signal gating circuit, wherein:
Sequential control circuit is to electric power bias circuit output offset control signal, and this bias control signal is controlled the frequency and the dutycycle of the offset signal of electric power bias circuit output;
Sequential control circuit is to signal gating circuit and signal processing circuit output gating control signal, one of output signal of this gating control signal control signal gating circuit output magnetoresistive transducer 7 and Hall element 11, and the control signal processing circuit processes is by this output signal of signal gating circuit output.
The typical consumed current of entire circuit system as shown in figure 11 owing to adopted pulsed bias, so the current sinking journey impulse form of total system, root-mean-square value (RMS) is about 4uA, compares with the product of same kind, power consumption has reduced an order of magnitude.
Sensor of the present utility model is because inner simultaneously integrated magnetoresistive transducer and Hall element so can detect parallel and external magnetic field vertical direction, are realized three omnidirectional's magnetic field detection functions, as shown in figure 12.
Obviously, in the above teachings, may carry out multiple correction and modification, and within the scope of the appended claims, the utility model can be embodied as the specifically described mode that is different to the utility model.
Claims (9)
1. a magnetic field sensor chip is characterized in that, comprising:
Magnetoresistive transducer;
Hall element;
Control integrated circuit, described control integrated circuit and described Hall element are in same one deck, and around described Hall element, described control integrated circuit receives and handle the output signal of described magnetoresistive transducer and Hall element.
2. magnetic field sensor chip as claimed in claim 1 is characterized in that described control integrated circuit comprises electric power bias circuit and signal processing circuit; Described electric power bias circuit is to described magnetoresistive transducer and Hall element output offset signal, to open or to close described magnetoresistive transducer and Hall element; Described signal processing circuit receives and handles the described output signal of described magnetoresistive transducer and Hall element.
3. magnetic field sensor chip as claimed in claim 2 is characterized in that, described control integrated circuit further comprises sequential control circuit and signal gating circuit; Described sequential control circuit is to described electric power bias circuit output offset control signal, and described bias control signal is controlled the described offset signal of described electric power bias circuit output; Described magnetoresistive transducer and Hall element are to described signal gating circuit output output signal separately; Described sequential control circuit is to described signal gating circuit and signal processing circuit output gating control signal, described gating control signal is controlled described signal gating circuit and is exported one of output signal of described magnetoresistive transducer and Hall element, and controls described signal processing circuit and handle this output signal of being exported by described signal gating circuit.
4. as each described magnetic field sensor chip in the claim 1 to 3, it is characterized in that described magnetic field sensor chip also comprises at described magnetoresistive transducer and described with the passivation separation layer between one deck.
5. magnetic field sensor chip as claimed in claim 4 is characterized in that, described passivation separation layer is provided with contact hole, and described magnetoresistive transducer has connecting line, and described magnetoresistive transducer is electrically connected with described control integrated circuit by described connecting line and contact hole.
6. magnetic field sensor chip as claimed in claim 4 is characterized in that described Hall element is positioned at the center of described control integrated circuit.
7. magnetic field sensor chip as claimed in claim 4 is characterized in that described Hall element is symmetrical structure.
8. magnetic field sensor chip as claimed in claim 4 is characterized in that, described magnetoresistive transducer is the Wheatstone bridge that the serpentine conductor structure constitutes, and adjacent described conductor structure is perpendicular to one another.
9. magnetic field sensor chip as claimed in claim 8 is characterized in that, the other shielding strip that is provided with of described conductor structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202888397U CN201935997U (en) | 2010-08-11 | 2010-08-11 | Magnetic field sensor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202888397U CN201935997U (en) | 2010-08-11 | 2010-08-11 | Magnetic field sensor chip |
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| CN201935997U true CN201935997U (en) | 2011-08-17 |
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| CN2010202888397U Expired - Fee Related CN201935997U (en) | 2010-08-11 | 2010-08-11 | Magnetic field sensor chip |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101937063A (en) * | 2010-08-11 | 2011-01-05 | 上海腾怡半导体有限公司 | Magnetic field sensor |
| CN102426344A (en) * | 2011-08-30 | 2012-04-25 | 江苏多维科技有限公司 | Triaxial magnetic field sensor |
| CN103278783A (en) * | 2013-05-10 | 2013-09-04 | 中国科学院物理研究所 | Magnetic field sensor and Hall device |
| CN104198107A (en) * | 2014-09-11 | 2014-12-10 | 武汉飞恩微电子有限公司 | Pressure sensor and manufacturing method thereof |
| CN104272129A (en) * | 2012-05-16 | 2015-01-07 | 株式会社村田制作所 | Bridge circuit and magnetic sensor comprising same |
| CN107976645A (en) * | 2012-07-11 | 2018-05-01 | 意法半导体股份有限公司 | Integrated multi-layer magnetoresistive sensor and its manufacture method |
| CN113574403A (en) * | 2019-03-20 | 2021-10-29 | 莱姆国际股份有限公司 | Magnetic field sensor |
-
2010
- 2010-08-11 CN CN2010202888397U patent/CN201935997U/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101937063A (en) * | 2010-08-11 | 2011-01-05 | 上海腾怡半导体有限公司 | Magnetic field sensor |
| CN102426344A (en) * | 2011-08-30 | 2012-04-25 | 江苏多维科技有限公司 | Triaxial magnetic field sensor |
| CN102426344B (en) * | 2011-08-30 | 2013-08-21 | 江苏多维科技有限公司 | Triaxial magnetic field sensor |
| CN104272129A (en) * | 2012-05-16 | 2015-01-07 | 株式会社村田制作所 | Bridge circuit and magnetic sensor comprising same |
| CN107976645A (en) * | 2012-07-11 | 2018-05-01 | 意法半导体股份有限公司 | Integrated multi-layer magnetoresistive sensor and its manufacture method |
| CN107976645B (en) * | 2012-07-11 | 2020-03-31 | 意法半导体股份有限公司 | Integrated multilayer magnetoresistive sensor and method of manufacturing the same |
| CN103278783A (en) * | 2013-05-10 | 2013-09-04 | 中国科学院物理研究所 | Magnetic field sensor and Hall device |
| CN103278783B (en) * | 2013-05-10 | 2015-11-25 | 中国科学院物理研究所 | Magnetic field sensor and hall device |
| CN104198107A (en) * | 2014-09-11 | 2014-12-10 | 武汉飞恩微电子有限公司 | Pressure sensor and manufacturing method thereof |
| CN104198107B (en) * | 2014-09-11 | 2017-03-08 | 武汉飞恩微电子有限公司 | A kind of pressure transducer and its manufacture method |
| CN113574403A (en) * | 2019-03-20 | 2021-10-29 | 莱姆国际股份有限公司 | Magnetic field sensor |
| CN113574403B (en) * | 2019-03-20 | 2022-11-15 | 莱姆国际股份有限公司 | Magnetic field sensor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110817 Termination date: 20130811 |