CN103116144B - Z-direction magnetic field sensor with magnetic orbit structure - Google Patents
Z-direction magnetic field sensor with magnetic orbit structure Download PDFInfo
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- CN103116144B CN103116144B CN201310023657.5A CN201310023657A CN103116144B CN 103116144 B CN103116144 B CN 103116144B CN 201310023657 A CN201310023657 A CN 201310023657A CN 103116144 B CN103116144 B CN 103116144B
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Abstract
A z-direction magnetic field sensor with a magnetic orbit structure comprises a basement, two pairs of input electrodes and output electrodes, two pairs of giant magneto resistive (GMR) sensitive elements and GMR reference elements and an accumulator of magnetic line of force arranged in a symmetrical mode. The two pairs of the input electrodes and the output electrodes are plated on the surface of the basement, and each pair of the GMR sensitive element and the GMR reference element and each pair of the input electrode and the output electrode form a Wheatstone bridge. A first pit and a second pit are arranged on the basement in a symmetrical mode, the Wheatstone bridge is arranged between the first pit and the second pit, edges of the inner planes of the first pit and the second pit and slopes of the first pit and the second pit and the pits are all provided with soft magnetic films in a plating mode to form an inner accumulator of the pit, the slope accumulator of the pit, and the edge accumulator of the pit in sequence, due to the fact that a central accumulator is arranged in the middle area between the first pit and the second pit, the accumulator of the magnetic line of force is formed. The z-direction magnetic field sensor with the magnetic orbit structure has the advantages of being simple and compact in structure, small in size, low in cost, convenient to manufacture, and high in resolution capability and the like.
Description
Technical field
The present invention relates generally to feeble signal field of sensing technologies, refers in particular to a kind of Z-direction magnetic field sensor adopting magnetic variation rail structure.
Background technology
Weak magnetic fields measurement is all widely used in fields such as earth-magnetic navigation, target detection, geologic prospecting, biomedicines.Magnetic sensor can measure three components in magnetic field simultaneously, calculate inclination angle and the position angle of sensor, in navigation, determine there is more wide application prospect than single shaft and double-shaft sensor in appearance location etc., high resolution, low-power consumption, miniaturization are the main development directions of magnetic sensor.
The magnetic sensor type that present stage is used for magnetic-field measurement is more, assembly type and integral type can be divided into by implementation, fluxgate sensor, Hall element, Lorentz force Magnetic Sensor, GMR (Giant Magnetoresistive, giant magnetoresistance) Magnetic Sensor etc. can be divided into by its principle of work.Wherein, GMR Magnetic Sensor is made based on microelectronic technique, have that resolving power is high, volume is little, the feature such as low in energy consumption, easy batch production, the magnetic sensor based on GMR effect is hopeful to realize integrated design, and has the feature of high resolution, miniaturization and low-power consumption.
The magnetic sensor of assembling mode is adopted to mainly contain a diaxon and a single shaft, these the two kinds combinations of three single shafts, mainly contain following several version: 1, assembly type magnetic sensor, its X, Y-axis adopt GMR single-axis sensors, Z axis adopts Hall element, and Hall element is convenient for measuring Z-direction magnetic field (patent No.: US20110234218A1); 2, integrated three independent Magnetic Sensors are to the three-axis measurement scheme (patent No.: US7271586) on a chip; 3, by three independently MI Magnetic Sensor fit together formation three axle (US7298140B2); 4, together with Hall element is assembled into search coil sensor, stationary magnetic field and alternating magnetic field can be measured simultaneously, resolving power is high, wherein measure stationary magnetic field and can reach 100pT, but owing to adopting three dimensional coils structure, volume is comparatively large, cannot realize the miniaturization of magnetic sensor and inconvenience batch production; 5, based on the magnetic field lines collector structure of GMR sensitive element, and Finite Element Simulation Analysis has been carried out to it, this structure can improve the sensitivity of GMR sensitive element, but three discrete annular collector techniques are difficult to realize, and the assembling that needs to put together forms magnetic sensor.Generally speaking, three axle orthogonalities of assembly type magnetic sensor depend on assembly precision, and the integral type magnetic sensor adopting MEMS technology to make has better orthogonality.
In the integral type magnetic sensor adopting MEMS technology, also many schemes are had to propose in prior art: the MR Magnetic Sensor 1, being made different pinning direction by certain technique on the same base, and the collector of soft magnetic material is made on the MR sensitive element side measuring Z-direction magnetic field, integration makes the magnetic sensor formed based on MR effect.2, the sensor in the Z-direction magnetic field measuring vertical plane is accomplished on inclined-plane, three-axis measurement (patent No.: US7564237, US7126330) is realized together with measuring the plane pick in X, Y-direction magnetic field, achieve integration to make, but the MR Magnetic Sensor manufacture difficulty on inclined-plane is relatively large, is difficult to ensure with the consistance of Magnetic Sensor in plane.3, inclined-plane MR sensitive element being produced on substrate is used for measure Z-direction magnetic field, make with the MR sensitive element integration in plane, form magnetic sensor (patent No.: US20120268113A1, US20090027048A1, US20090027048).4, another someone magnetic field three-axis sensor of adopting CMOS technology to realize based on Hall effect on a silicon chip, ensure that the orthogonality between three axles, without hysteresis effect, special magnetic material is not needed yet, can measure three-component, but resolving power is low, about 21 μ T simultaneously.5, adopt micro-processing technology in GaAs substrate, utilize thermal stress to make Hall element and the base plane less perpendicular of making, form three axle Hall elements, achieve miniaturization and the integrated design manufacture of magnetic sensor, technological process is relatively simple, but the angle of its Z-direction sensor and plane is difficult to accurate control, orthogonality between all three axles is difficult to ensure, and minimum detectable is at 2 μ about T.6, someone utilizes the interaction force of permanent magnet film and external magnetic field to change the principle of resistance sensing element of pressure output, adopt MEMS process technology on silicon chip, realize the integrated design of magnetic sensor, ensure that miniaturization and the integration of sensor, but the resolving power that can reach is limited, the measurement resolution in its Z-direction magnetic field is 250nT at present.7, the electrical conductor owing to being placed in magnetic field can be subject to the acting force of Lorentz force, by structural design, this acting force is produced displacement, cause capacitance variations, measure electric capacity and can obtain magnetic field magnitudes, adopt the Lorentz force magnetic sensor of MEMS technology, without hysteresis effect, special magnetic material is not needed yet, orthogonality, miniaturization, low-power consumption can be ensured, but the resolving power that the Magnetic Sensor of this principle can reach is not high, the measurement resolution of its Z component is about 70nT at present, and lower than the resolving power that plane inner field is measured.8, on twin shaft GMR Magnetic Sensor basis, utilize NiFe plate the magnetic-field component distortion of vertical plane to be measured to plane, form three axle MR sensors, usable surface micro-processing technology realizes, but the magnetic-field component after distortion is less, Z-direction magnetic-field measurement resolving power is lower.
Known by the above analysis to existing integrated magnetic sensor, in magnetic sensor integration makes, difficult point is to measure Z-direction magnetic field.The resolution that can reach based on the Magnetic Sensor of Hall magnet-sensitive element and Lorentz force resonance is not high, adopt GMR sensitive element can realize high resolving power and measure demand, but GMR sensitive element has a feature, can only measure exactly GMR sensitive element magnetic field planar.Address this problem and mainly contain two kinds of thinkings, the first is that Magnetic Sensor is produced on the inclined-plane of substrate, and the second uses planar magnetic sensor measurement after the Z-direction magnetic line of force of vertical plane being forwarded in plane with magnetic line of force steering structure.Measuring aspect, Z-direction magnetic field based on these two kinds of thinkings also has many schemes to propose at present.As: the collector 1, adding soft magnetic material in MR elements on either side, measure (patent No.: US7505233B2) in the plane that the magnetic line of force of vertical plane is partly rolled over; 2, placing soft magnetism block on MR sensitive element side, is also similar effect (patent No.: US20120200292A1); 3, in substrate, make pit or boss, then MTJ device is produced on inclined-plane, measure Z-direction magnetic field (patent No.: US20120068698) by the output signal of processing of circuit sensitive element; 4,111 are etched at 100 surface anisotropies of silicon, have the angle depending on silicon crystalline structure between 111 and 100, then on AMR magnet-sensitive element 111, due to AMR sensitive element and base plane in a certain angle, can measure Z-direction magnetic field, noise level is 20nT@1Hz; Meanwhile, be produced on the AMR magnet-sensitive element on inclined-plane and the sensitivity of AMR magnet-sensitive element to magnetic field in plane variant, adopt simple circuit to be difficult to solve Z-direction magnetic field magnitudes from the response of two magneto sensors.
Generally, integral type magnetic sensor has orthogonality better than assembly type, and micro-processing technology can be adopted to realize the miniaturization of sensor, but based on Hall element, AMR element, Lorentz force resonance magnet-sensitive element, overall resolving power is lower; Adopt GMR generally can reach higher sensitivity and resolution as sensitive element, but GMR to magnetic-field-sensitive planar, the magnetic field of vertical plane is very little on its impact.Near GMR sensitive element, place soft magnetism block the Z-direction magnetic line of force to be transferred in plane to a certain extent and measure, but above various laying method difficulty in specific implementation is comparatively large, and is difficult to the structural symmetry and the consistency of performance that ensure soft magnetism block; Z-direction magnetic field can directly be measured in inclined-plane GMR sensitive element being produced on sensor base, but its implementation also more complicated, and between each Magnetic Sensor on inclined-plane and and plane in Magnetic Sensor between consistance be also difficult to ensure.So the difficult point of technical development is how to measure Z-direction magnetic field with GMR sensitive element in prior art, the designing and producing of three-axis integrative formula Magnetic Sensor that this difficult point result in based on GMR sensitive element is difficult to realize.
Summary of the invention
The technical problem to be solved in the present invention is just: the technical matters existed for prior art, the invention provides a kind of simple and compact for structure, volume is little, the Z-direction magnetic field sensor of with low cost, easy to make, the employing magnetic variation rail structure with high resolution.
For solving the problems of the technologies described above, the present invention by the following technical solutions:
A kind of Z-direction magnetic field sensor adopting magnetic variation rail structure, the magnetic line of force collector comprising substrate, two pairs of input and output electrodes, two pairs of GMR sensitive elements and GMR reference elements and be arranged symmetrically, described two pairs of input and output electrodes are plated on the surface of substrate, and often pair of GMR sensitive element and GMR reference element and a pair input and output electrode form Wheatstone bridge; Described substrate is provided with two symmetrical the first pits and the second pit, described Wheatstone bridge is between the first pit and the second pit, described first pit and the first pit inner plane, inclined-plane and pit edge are all coated with soft magnetic film to form collector, inclined-plane collector, pit edge collector in the pit arranged successively, zone line between described first pit and the second pit is provided with center collector, and then forms magnetic line of force collector.
As a further improvement on the present invention:
The air gap of described center collector and pit edge collector centre is wider than GMR sensitive element, and described GMR magnet-sensitive element is positioned between center collector and pit edge collector; Described GMR reference element is positioned at the below of center collector.
Described GMR sensitive element and GMR reference element are all in slice shape.
Described GMR sensitive element and GMR reference element adopt spin valve structure or adopt multi-layer film structure.
Described substrate adopts intrinsic silicon, by etching the first symmetrical pit and the second pit at intrinsic silicon plane corrosive liquid after photoetching, the inclined-plane of described first pit and the first pit is (111) plane of intrinsic silicon, is 54.74 ° with the angle of (100) plane of intrinsic silicon.
The surface of described intrinsic silicon deposits a layer insulating by adopting gas-phase chemical reaction.
Described a pair input and output electrode comprises Wheatstone bridge bias electrode and Wheatstone bridge signal output electrode.
Compared with prior art, the invention has the advantages that: the Z-direction magnetic field sensor of employing magnetic variation rail structure of the present invention, simple and compact for structure, with low cost, by etching (111) inclined-plane on silicon face, soft magnetic film is plated in (111) inclined-plane and (100) plane and forms change rail structure, this symmetry of change rail structure and the consistance of performance can be fully guaranteed, and can be used for the break-in and the amplification that realize Z-direction magnetic field.Measure in the present invention Z-direction magnetic field GMR sensitive element can with plane in measure X, the GMR sensitive element in Y-direction magnetic field adopts same technological process to make, comparison of coherence is good.Measure the Magnetic Sensor in magnetic field, three directions and form magnetic sensor together, adopt micro-processing technology to ensure the orthogonality of three-axis measurement, there is again the advantages such as high resolution, volume are little.
Accompanying drawing explanation
Fig. 1 is plan structure schematic diagram of the present invention.
Fig. 2 is the schematic cross-section at A-A place of the present invention.
Fig. 3 is the scheme of installation of collector and GMR element in the present invention.
Fig. 4 is the structural representation of substrate in the present invention.
Marginal data:
101, a GMR sensitive element; 102, the 2nd GMR sensitive element; 201, a GMR reference element; 202, the 2nd GMR reference element; 301, the first Wheatstone bridge bias electrode; 302, the second Wheatstone bridge bias electrode; 401, the first Wheatstone bridge signal output electrode; 402, the second Wheatstone bridge signal output electrode; 5, substrate; 601, the first pit edge collector; 602, the second pit edge collector; 701, the first inclined-plane collector; 702, the second inclined-plane collector; 801, collector in the first pit; 802, collector in the second pit; 9, center collector; 1001, the first pit; 1002, the second pit.
Embodiment
Below with reference to Figure of description and specific embodiment, the present invention is described in further details.
As depicted in figs. 1 and 2, the Z-direction magnetic field sensor of employing magnetic variation rail structure of the present invention, the magnetic line of force collector comprising substrate 5, two pairs of input and output electrodes, two pairs of GMR sensitive elements and GMR reference element and be arranged symmetrically.Two pairs of input and output electrodes are plated on the surface of substrate 5, that is: often pair comprises one group of Wheatstone bridge bias electrode and Wheatstone bridge signal output electrode, first Wheatstone bridge bias electrode 301 and the first Wheatstone bridge signal output electrode 401 are a pair, and the second Wheatstone bridge bias electrode 302 and the second Wheatstone bridge signal output electrode 402 are a pair.One GMR sensitive element 101 and a GMR reference element 201 are a pair, 2nd GMR sensitive element 102 and the 2nd GMR reference element 202 are a pair, GMR sensitive element and GMR reference element are all in fine strip shape, and GMR sensitive element, GMR reference element form Wheatstone bridge by Wheatstone bridge bias electrode and Wheatstone bridge signal output electrode.Two symmetrical the first pit 1001 and the second pits 1002 are etched in substrate 5, first pit 1001 and the second pit 1002 inner plane, inclined-plane and pit edge are all coated with soft magnetic film to form collector, inclined-plane collector, pit edge collector in the pit arranged successively, zone line between first pit 1001 and the second pit 1002 is provided with center collector 9, and then forms magnetic line of force collector.The effect of magnetic line of force collector comprises magnetic line of force change rail and two aspects are amplified in magnetic field, and it is exactly the Z-direction magnetic field of vertical substrate 5 plane is forwarded in plane measure that the magnetic line of force becomes rail, and it is then the sensitivity that can improve GMR sensitive element that magnetic field is amplified.
Wheatstone bridge is between the first pit 1001 and the second pit 1002, and the air gap of center collector 9 and pit edge collector centre is slightly wider than GMR sensitive element, is used for placing measurement GMR magnet-sensitive element.GMR reference element is positioned at the below of center collector 9, is subject to the shielding action of center collector 9 so its resistance does not affect by external magnetic field substantially.
As shown in Figure 3, in the present embodiment, GMR sensitive element, GMR reference element, all in slice shape, can adopt spin valve structure, also can adopt multi-layer film structure.GMR sensitive element is placed on three pieces and is separated in collector (the first pit edge collector 601, center collector 9, second pit edge collector 602) two air gaps being formed, GMR reference element is placed planar below center collector 9, GMR reference element is subject to the shielding action of center collector 9, can not external magnetic field change make a response, but the temperature characterisitic of all sensitive elements is consistent.Therefore, this electric bridge combination can weaken the impact of temperature on measurement result.In pit edge collector in magnetic line of force collector, inclined-plane collector, pit, collector and center collector are made at substrate 5 surface sputtering by high magnetic permeability soft magnetic material (as NiFe, CoZrNb etc.), its shape can be rectangle collector (or trapezoidal or other shapes), a demand fulfillment symmetry requirement.
Say that in GMR sensitive element, GMR reference element and pit edge collector, inclined-plane collector, pit, collector and center collector are along axis in line, to ensure its symmetry on the whole.That is, array from left to right on substrate 5 see Fig. 1: collector 802 in collector 801, first inclined-plane collector 701, first pit edge collector the 601, the one GMR sensitive element 101, a GMR reference element 201, center collector 9, the 2nd GMR reference element 202, the 2nd GMR sensitive element 102, second pit edge collector 602, second inclined-plane collector 702, second pit in the first pit.
In the present embodiment, as shown in Figure 4, substrate 5 adopts intrinsic silicon, two symmetrical pits (that is: the first pit 1001 and the second pit 1002) are etched at silicon (100) plane corrosive liquid after photoetching, the inclined-plane of pit is (111) plane of intrinsic silicon, be 54.74 ° with the angle of (100) plane, its angle determined can ensure the symmetry of two pits.Then, adopt gas-phase chemical reaction at surface deposition one layer insulating, as Si
3n
4, to improve the insulating property of substrate 5.The profile of pit can be selected according to actual needs, is not limited to the rectangle shown in this example, can meet the demands as long as can form centrosymmetric inclined-plane.The corrosion depth of pit is determined according to required Z-direction conversion efficiency.In plane, the shape of two electrode pairs and particular location are also not limited to shown in Fig. 4, if meet GMR sensitive element, GMR reference element install after lead-in wire require.In substrate 5, all electrode pairs all can adopt the technique first sputtering (or vacuum evaporation, plating etc.) conductive film layer (aluminium or gold etc.) photoetching corrosion again to prepare shaping.
Adopt structure of the present invention, first can redirect in plane by the magnetic line of force of vertical plane, the complanation realizing Z-direction magnetic-field component is measured.There is accurate angle in intrinsic silicon suprabasil (111) inclined-plane and (100) interplanar, be 54.74 degree, this angle depends on the crystal structure of intrinsic silicon self.The each bevel angle of the pit eroded away is consistent, can ensure the good symmetry of collector, realize the high-acruracy survey in Z-direction magnetic field.Secondly, structure of the present invention can amplify tested Weak magentic-field, improves the sensitivity of GMR element further; Collector is one deck high magnetic permeability soft magnetic film, the magnetic line of force is had to the effect assembled and amplify, can strengthen the magnetic flux density at GMR sensitive element place.Finally, the GMR sensitive element measuring Z-direction magnetic field is produced in (100) plane of intrinsic silicon substrate 5, easilier than the scheme be placed on inclined-plane to realize, and can make to same batch of the GMR sensitive element in Y-direction magnetic field with measuring X, make the GMR sensitive element magnetic property of magnetic sensor have good consistance.In a word, the symmetrical magnetic line of force of this employing micro-processing technology becomes rail structure can planar to the measurement by magnification of Z-direction magnetic field, integral type magnetic sensor can be made into the GMR sensitive element of measurement plane internal magnetic field component, three between centers have good orthogonality, and sensor one-piece construction is simple, easily manufactured, effectively can reduce the cost of manufacture of sensor.
Below be only the preferred embodiment of the present invention, protection scope of the present invention be not only confined to above-described embodiment, all technical schemes belonged under thinking of the present invention all belong to protection scope of the present invention.It should be pointed out that for those skilled in the art, some improvements and modifications without departing from the principles of the present invention, should be considered as protection scope of the present invention.
Claims (6)
1. one kind adopts the Z-direction magnetic field sensor of magnetic variation rail structure, it is characterized in that, the magnetic line of force collector comprising substrate (5), two pairs of input and output electrodes, two pairs of GMR sensitive elements and GMR reference elements and be arranged symmetrically, described two pairs of input and output electrodes are plated on the surface of substrate (5), and often pair of GMR sensitive element and GMR reference element and a pair input and output electrode form Wheatstone bridge, described substrate (5) is provided with two symmetrical the first pits (1001) and the second pit (1002), described Wheatstone bridge is positioned between the first pit (1001) and the second pit (1002), described first pit (1001) and the second pit (1002) inner plane, inclined-plane and pit edge are all coated with soft magnetic film to form collector in the pit arranged successively, inclined-plane collector, pit edge collector, zone line between described first pit (1001) and the second pit (1002) is provided with center collector (9), and then form magnetic line of force collector, the air gap of described center collector (9) and pit edge collector centre is wider than GMR sensitive element, and described GMR magnet-sensitive element is positioned between center collector (9) and pit edge collector, described GMR reference element is positioned at the below of center collector (9).
2. the Z-direction magnetic field sensor of employing magnetic variation rail structure according to claim 1, it is characterized in that, described GMR sensitive element and GMR reference element are all in slice shape.
3. the Z-direction magnetic field sensor of employing magnetic variation rail structure according to claim 1, is characterized in that, described GMR sensitive element and GMR reference element adopt spin valve structure or adopt multi-layer film structure.
4. according to the Z-direction magnetic field sensor of the employing magnetic variation rail structure in claims 1 to 3 described in any one, it is characterized in that, described substrate (5) adopts intrinsic silicon, by etching symmetrical the first pit (1001) and the second pit (1002) at intrinsic silicon 100 plane corrosive liquid after photoetching, the inclined-plane of described first pit (1001) and the second pit (1002) is 111 planes of intrinsic silicon, is 54.74 ° with the angle of 100 planes of intrinsic silicon.
5. the Z-direction magnetic field sensor of employing magnetic variation rail structure according to claim 4, is characterized in that, the surface of described intrinsic silicon deposits a layer insulating by adopting gas-phase chemical reaction.
6., according to the Z-direction magnetic field sensor of the employing magnetic variation rail structure in claims 1 to 3 described in any one, it is characterized in that, described a pair input and output electrode comprises Wheatstone bridge bias electrode and Wheatstone bridge signal output electrode.
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| CN103323796B (en) * | 2013-06-21 | 2015-07-29 | 中国人民解放军国防科学技术大学 | A kind of MTJ magnetic field sensor using Graphene as barrier layer |
| CN103439749A (en) * | 2013-07-10 | 2013-12-11 | 中北大学 | Magnetism collecting amplifying and guiding structure applied to micro magnetic sensor |
| CN103412269B (en) | 2013-07-30 | 2016-01-20 | 江苏多维科技有限公司 | Single-chip push-pull bridge type magnetic field sensor |
| CN104346856A (en) * | 2013-08-02 | 2015-02-11 | 北京嘉岳同乐极电子有限公司 | Magnetic imaging sensor |
| CN104459576B (en) * | 2013-09-24 | 2018-03-06 | 上海矽睿科技有限公司 | Magnetic sensing device and its magnetic strength induction method, the preparation technology of magnetic sensing device |
| CN107894576B (en) * | 2017-10-27 | 2019-11-29 | 中国人民解放军国防科技大学 | Integrated low-power-consumption three-axis magnetic field sensor with high Z-direction resolution |
| CN110286340B (en) * | 2019-06-13 | 2021-04-09 | 中国人民解放军国防科技大学 | Serial-type triaxial integration magnetic sensor |
| CN111007442B (en) * | 2019-12-09 | 2021-04-09 | 中国科学院电子学研究所 | MEMS resonant magnetoresistive sensor for improving resolution of low-frequency magnetic field |
| CN111624525B (en) * | 2020-05-26 | 2022-06-14 | 中国人民解放军国防科技大学 | Integrated three-axis magnetic sensor for suppressing magnetic noise by utilizing magnetic stress regulation and control |
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