CN103105592B - Single-chip three-shaft magnetic field sensor and production method - Google Patents
Single-chip three-shaft magnetic field sensor and production method Download PDFInfo
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- CN103105592B CN103105592B CN201310032909.0A CN201310032909A CN103105592B CN 103105592 B CN103105592 B CN 103105592B CN 201310032909 A CN201310032909 A CN 201310032909A CN 103105592 B CN103105592 B CN 103105592B
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Abstract
The invention provides a single-chip three-shaft magnetic field sensor and a production method. The single-chip three-shaft magnetic field sensor at least comprises a first substrate, at least two first electrodes, at least four second electrodes, a second substrate, a single-shaft rotation structure, a double-shaft rotation structure, a first magnetic film structure and a second magnetic film structure, wherein the first electrodes and the second electrodes are formed on the surface of the first substrate, the second substrate and the first substrate bond together through keys, the second substrate is provided with the single-shaft rotation structure and the double-shaft rotation structure, the single-shaft rotation structure and each of the two first electrodes form a capacitor structure, and the double-shaft rotation structure and each of the four second electrodes form a capacitor structure. The first magnetic film structure is formed on the surface of the single-shaft rotation structure and can generate corresponding torque under the action of a magnetic field in a first direction, and the second magnetic film structure is formed on the surface of the double-shaft rotation structure and can generate corresponding torque under the action of a magnetic field in a second direction and a magnetic field in a third direction. The single-chip three-shaft magnetic field sensor has the advantages of being high in sensitivity, small in size, low in power consumption and cost, easy to package and the like.
Description
Technical field
The present invention relates to sensor field, particularly relate to a kind of single-chip tri-axis magnetic field sensor and preparation method.
Background technology
Magnetic field sensor refers to magnetic signal or the class sensor of signal sensitivity that can be converted to magnetic signal.Magnetic field sensor is widely used in the various application scenarios such as magnetic navigation, intelligent transportation, intelligent grid, automotive electronics, ferromagnetic material detection.Magnetic field itself is a vector field, and according to the examine repair of Magnetic Sensor, magnetic field sensor can be divided into scalar Magnetic Sensor and the large class of vector magnetic sensor two.Scalar Magnetic Sensor only detects the size in magnetic field, does not detect the direction in magnetic field, as optically pumped magnetometer, is only applicable to special application.Vector magnetic sensor can not only detect the size in magnetic field, can also detect the direction in magnetic field.If complete magnetic vector information need be measured, need three axial vector magnetic field sensors.For the Magnetic Sensor application scenario that magnetic navigation, electronic compass etc. are most, need to measure arbitrary space magnetic field vector, therefore, it is possible to there is demand widely to three axis vector magnetic sensors that space magnetic field size and Orientation is measured simultaneously, wide market, to have a high potential.
Three axis vector magnetic sensors normally adopt orthogonal three single shaft vector magnetic sensor combinations encapsulation to form, and wherein single axis vector magnetic sensor is the sensor can only measured the component in a magnetic vector direction.Current commercialization or the vector magnetic sensor studied, as Hall magnetic sensor, anisotropic magnetoresistive sensor (AMR), fluxgate and micro electronmechanical (MEMS) Magnetic Sensor, multi-chip assembled package method is all adopted to form three axis vector magnetic sensors.
At present, the state-of-the-art of vector magnetic sensor is as follows:
1) Hall magnetic sensor is a kind of magnetic field sensor utilizing the Hall effect of semiconductor material to make.Exciting current I is passed at wafer two ends, when to there is magnetic induction density be the uniform magnetic field of B for the vertical direction of wafer, then on the direction perpendicular to electric current and magnetic field, producing electric potential difference is the Hall voltage of UH, and Hall voltage size is directly proportional to magnetic field.Hall magnetic sensor to the magnetic field vertical with direction of current or magnetic-field component sensitivity, is only a kind of vector magnetic sensor.Measurement due to Hall magnetic sensor needs to provide current excitation, therefore its power consumption is higher, and magnetic field resolution is also lower; In addition, technically very difficult owing to single-chip directly making three orthogonal Hall elements, utilize Hall magnetic sensor to make magnetic sensor and usually adopt the package integrated method of multi-chip, this can increase the size of three axle Hall magnetic sensors, power consumption and packaging cost.Such as, three axle Hall magnetic sensors of existing Melexis company development, can measure the magnetic field of 20-70mT, magnetic field resolution is 1 μ T magnitude.
2) anisotropic magnetoresistive sensor (AMR) is the Magnetic Sensor made according to the anisotropic magneto-resistive effect of ferromagnetic material.Ferromagnetic material (as permalloy) has anisotropic magnetoresistance, and when giving banded permalloy material by electric current I, its magneto-resistor depends on the angle of sense of current and direction of magnetization.The ultimate principle of AMR magnetoresistive transducer is: in anisotropic magnetic material outside magnetic field B, and its direction of magnetization rotates, and when direction of magnetization turns to perpendicular to sense of current, the magneto-resistor of material will reduce; When direction of magnetization turn to be parallel to sense of current time, the magneto-resistor of material will increase.AMR magnetoresistive transducer generally adopts four magneto-resistors to form and detects electric bridge, and under the B effect of tested magnetic field, wherein two resistances increase, two other resistance reduces, in its range of linearity, the output voltage of electric bridge is directly proportional to tested magnetic field, realizes the detection of external magnetic field.But the power consumption of the electric bridge testing circuit of AMR magnetoresistive transducer is higher, and need to make resetting coil in sensor chip, need very large exciting current during reset, its manufacturing process is also incompatible with CMOS technology; In addition, magnetic sensor is also formed by assembled package by the AMR sensor of three single shafts or a single shaft and a twin shaft AMR sensor, equally also can increase volume and the packaging cost of device.Such as, the minimum magnetic field can detecting 8.5nT of AMR magneto-resistive magnetic sensors of Honeywell company development.
3) giant magnetoresistance (GMR) Magnetic Sensor is the lifting of AMR technology, its detection sensitivity has and significantly improves, but also there is technical difficulty in manufacture magnetic sensor, is also adopt to be formed by assembled package by the GMR sensor of three single shafts or a single shaft and a twin shaft GMR sensor usually.
4) fluxgate sensor forms around magnetizing coil, inductive coil by magnetic core is outer, and its magnetic field resolution can reach 0.1nT magnitude.The magnetic core of fluxgate sensor adopts the soft magnetic material that magnetic permeability is high, coercive force is little, and magnetic core is activated to saturated by exciting curent during work in magnetizing coil, and its excitation power consumption is very high.For improving measuring accuracy, fluxgate sensor adopts bimag or track-shaped magnetic core structure to realize differential signal and exports.Three axis fluxgate sensors are also formed by the assembled package of single-axis sensors, and the three axis fluxgate sensor bulk obtained are large, encapsulation precision requires high, with high costs, are only limitted to high-end application scenario.The high resolving power of fluxgate generally only can obtain on traditional fluxgate magnetic sensor, and for the fluxgate sensor of microminiaturization, and along with reducing of size, the signal to noise ratio (S/N ratio) of measuring accuracy, output, temperature characterisitic and stability also can decrease.The microminiaturization of fluxgate sensor needs the miniature magnetic core making low-resistance miniature volume body coils and high magnetic permeability, technically very difficult.
4) MEMS magnetic field sensor can meet the requirement of miniaturization, low-power consumption and low cost, is developed rapidly from the nineties in last century.MEMS Magnetic Sensor comprises MEMS dynamic magnetic sensor and MEMS static-magnetic sensor two kinds.The survey magnetic principle of MEMS dynamic magnetic sensor drives micro mechanical structure to detect magnetic field by external magnetic field and the exciting current Lorentz force produced that interacts.During working sensor, micro mechanical structure is excited to resonant condition, and high q-factor can increase substantially the sensitivity of sensor.In order to obtain as far as possible high Q value, the Vacuum Package of sensor must be carried out, this considerably increases difficulty and the cost of manufacture craft.This kind of MEMS Magnetic Sensor needs to apply exciting current, and power consumption is higher, and owing to adopting resonant operational mode, working sensor bandwidth is narrow.Corresponding with this kind of MEMS dynamic magnetic sensor being operated in resonant condition is MEMS static-magnetic sensor.Magnetic film and the micro mechanical structure of MEMS static-magnetic sensor generation magnetic force combine, and its advantage is without the need to adding extra current excitation again and carrying out Vacuum Package, thus significantly reduces power consumption and cost, has structure simple, the features such as cost is low simultaneously.
The research-and-development activity of current MEMS Magnetic Sensor mainly concentrates on the MEMS Magnetic Sensor of single shaft, the method realizing magnetic sensor is that (wherein one piece is single shaft MEMS Magnetic Sensor for three pieces of single shaft MEMS magnetic sensor chips or two pieces of magnetic sensor chips, another block is biaxial MEMS Magnetic Sensor) mutually vertical cartel encapsulation form, encapsulation requires high, also add volume and the packaging cost of device simultaneously.Therefore, utilize the advantage of MEMS technology, the magnetic sensor of development single-chip high sensitivity, low-power consumption, low cost has important practical value and market outlook.
Summary of the invention
The deficiencies in the prior art in view of the above, the object of the present invention is to provide a kind of highly sensitive, size is little, low in energy consumption, low cost, the simple single-chip tri-axis magnetic field sensor of encapsulation.
Another object of the present invention is to the preparation method that a kind of single-chip tri-axis magnetic field sensor is provided.
For achieving the above object and other relevant objects, the invention provides a kind of single-chip tri-axis magnetic field sensor, it at least comprises:
First substrate;
Be formed at least two the first electrodes and at least four second electrodes of the first substrate surface;
With the second substrate of described first substrate bonding, it has the single shaft torsion structure that forms capacitance structure with two the first electrodes respectively and forms the twin shaft torsion structure of capacitance structure respectively with at least four the second electrodes;
Be formed at described single shaft torsion structure surface and the first magnetic film structure of corresponding magnetic moment of torsion can be produced under the magnetic fields of first direction;
Be formed at described twin shaft torsion structure surface and the second magnetic film structure of corresponding magnetic moment of torsion can be produced under the magnetic fields in second and third direction.
Preferably, described single shaft torsion structure comprises: as axle the first elastic beam and be connected to described first elastic beam both sides and form at least two first of electric capacity respectively with first electrode and reverse film.
Preferably, described twin shaft torsion structure comprises: as axle the second elastic beam, connect described second elastic beam the framework reversed, the 3rd elastic beam of framework can be reversed described in connecting as axle and connect described 3rd elastic beam and form multiple second of capacitance structure with second electrode respectively and reverse film.
Preferably, described first magnetic film structure comprises: be sequentially formed at the adhesion layer on the first torsion film surface, magnetic-film layer and anti oxidation layer.
Preferably, described second magnetic film structure comprises: be sequentially formed at the adhesion layer on the second torsion film surface, magnetic-film layer and anti oxidation layer.
Preferably, described single-chip tri-axis magnetic field sensor also comprises: be formed in described first substrate, the second substrate or encapsulation lid capacitance detecting integrated circuit structure special, be formed in the micro electro mechanical device structure etc. of described first substrate or the second substrate; More preferably, described micro electro mechanical device comprises one or more in accelerometer, gyroscope, pressure transducer, humidity sensor, temperature sensor, sonic transducer.
Preferably, described single-chip tri-axis magnetic field sensor also comprises: the encapsulation lid covering described first magnetic film structure and the second magnetic film structure.
The present invention also provides a kind of preparation method of single-chip tri-axis magnetic field sensor, and it at least comprises step:
-form at least two the first electrodes and at least four the second electrodes at the first substrate surface;
-pit of accommodating at least two the first electrodes and at least four the second electrodes is formed at the second substrate surface;
-by described first substrate and the second substrate bonding, make pit cover each first electrode and the second electrode;
-the second substrate after bonding forms the first magnetic film structure and the second magnetic film structure, and relative to the position of described first magnetic film structure and the second magnetic film structure, described second substrate is etched, to form single shaft torsion structure and twin shaft torsion structure respectively;
-magnetization treatment is carried out to described first magnetic film structure and the second magnetic film structure, corresponding magnetic moment of torsion can be produced to make the first magnetic film structure under the magnetic fields of first direction, the second magnetic film structure can produce corresponding magnetic moment of torsion under the magnetic fields in second and third direction.
Preferably, can adopt and carry out These steps based on microcomputer electric surface technology or micro electronmechanical body silicon processing technique.
Preferably, the preparation method of described single-chip tri-axis magnetic field sensor also comprises :-adopt the step encapsulating lid and the bonding structure forming torsion structure is encapsulated.
Preferably, the preparation method of described single-chip tri-axis magnetic field sensor is also included in the first substrate or the second substrate formation micro electro mechanical device structure, on the first substrate, the second substrate or encapsulation lid, forms the steps such as capacitance detecting integrated circuit structure special.
As mentioned above, single-chip tri-axis magnetic field sensor of the present invention and preparation method, there is following beneficial effect: be directly integrated on one chip in the sensor chip fabrication phase by a twin shaft Magnetic Sensor and a uniaxial magnetic quantity sensor, enormously simplify the encapsulation of triaxial magnetic field sensor, have miniaturization, high sensitivity, low cost, can the feature such as mass making.
Accompanying drawing explanation
Fig. 1 a to Fig. 1 i is shown as the process flow diagram of the preparation method of single-chip tri-axis magnetic field sensor of the present invention.
Fig. 2 a is shown as the electrode schematic diagram of single-chip tri-axis magnetic field sensor of the present invention.
Fig. 2 b is shown as the vertical view of single-chip tri-axis magnetic field sensor of the present invention.
Element numbers explanation
11 glass sheet
12 metallic aluminum
13 first electrodes
14 second electrodes
21 soi wafers
211 top layer silicon
212 oxide layers
213 substrate silicon layer
22 pits
23,24 alloy firms
231,241 Ta layers
232,242 Ta layers
233,243 NdFeB layers
25 single shaft torsion structures
251 first elastic beams
252,253 first film is reversed
26 twin shaft torsion structures
261 second elastic beams
262 can reverse framework
263 the 3rd elastic beams
264 second reverse film
27 lids
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this instructions can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this instructions also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 a to Fig. 2 b.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
The preparation method of single-chip tri-axis magnetic field sensor of the present invention at least comprises the following steps:
The first step: form at least two the first electrodes and at least four the second electrodes at the first substrate surface.
Such as, as shown in Figure 1a, adopt commercial glass sheet 11 as the first substrate, glass sheet 11 thickness about 450 μm, by magnetron sputtering at its surface deposition metallic aluminum 12, thickness is 0.5 μm; Subsequently, in metallic aluminum 12 surface coating, photoetching, then after adopting phosphoric acid corrosion, remove photoresist, obtain 2 the first electrodes 13 and 4 the second electrodes 14, as shown in Figure 1 b.
Second step: the pit forming accommodating at least two the first electrodes and at least four the second electrodes at the second substrate surface.
Such as, as illustrated in figure 1 c, adopt commercial soi wafer 21 as the second substrate, the top layer silicon 211 of this soi wafer 21 is heavily doped low-resistance silicon, and the thickness of top layer silicon 211 is 30 μm, and the thickness of intermediate oxide layer 212 is 2 μm, and substrate silicon layer 213 thickness is 380 μm.By thermal oxide, at soi wafer 21 superficial growth thickness be
siO
2, by photoetching, optionally remove the SiO that top layer silicon grows
2, and put into 40 DEG C after this soi wafer 21 is removed photoresist, the corrosion of the KOH solution of concentration 40% is after one hour, form pit 22, pit 22 degree of depth is about 5 μm.
3rd step: by described first substrate and the second substrate bonding, makes pit cover each first electrode and the second electrode.
Such as, after the first underlying structure shown in Fig. 1 b is aimed at the second underlying structure shown in Fig. 1 c, bonding, anode linkage technique is adopted to carry out silicon on glass bonding, bonding face is the one side of soi wafer 21 top layer silicon and glass sheet 11 deposition of aluminum electrode, pit 22 is made to cover each first electrode 13 and the second electrode 14, as shown in Figure 1 d.
4th step: the second substrate is after bonding formed the first magnetic film structure and the second magnetic film structure, and relative to the position of described first magnetic film structure and the second magnetic film structure, described second substrate is etched, to form single shaft torsion structure and twin shaft torsion structure respectively.
Such as, first adopt the substrate silicon of the soi wafer 21 of the structure shown in KOH erosion removal Fig. 1 d, adopt the buried regions SiO of HF erosion removal soi wafer 21 subsequently
2; As shown in fig. le; Subsequently, recycle monocrystalline silicon piece through through corrosion as hard mask, silicon thin film 211 makes Ta/NdFeB/Ta three-layer alloy film 23 and 24, as shown in Figure 1 f; Wherein, the thickness of Ta layer 231,232,241 and 242 is about 50nm, and the thickness of NdFeB layer 233 and 243 is about 1 μm, carries out annealing in process after alloy firm 23 and 24 completes to it.
Then, gluing, photoetching on silicon thin film 211, ICP etching release single shaft torsion structure 25 and twin shaft torsion structure 26, as shown in Figure 1 g.Wherein, described single shaft torsion structure 25 comprise as axle the first elastic beam 251 and be connected to described first elastic beam 251 both sides first reverse film 252 and 253, first reverse film 252 and 253 form capacitance structure with first electrode 13 respectively; Described twin shaft torsion structure 26 comprises: as axle the second elastic beam 261, connect described second elastic beam 261 the framework reversed 262, the 3rd elastic beam 263 of framework 262 can be reversed described in connecting as axle and connect described 3rd elastic beam 263 and form 4 second of capacitance structure respectively with second electrode 14 and reverse film 264.
5th step: carry out magnetization treatment to described first magnetic film structure and the second magnetic film structure, can produce corresponding magnetic moment of torsion to make the first magnetic film structure, the second magnetic film structure can produce corresponding magnetic moment of torsion under the magnetic fields in second and third direction under the magnetic fields of first direction.
Such as, structure shown in Fig. 1 g is put into the magnetization that uniform strong magnetic field completes alloy firm 23 and 24, wherein, the magnetization in direction in the plane that first alloy film 23 and 24 carries out wafer level, adopt the magnetization that local magnetized equipment alloy film 24 carries out perpendicular to chip plane again, to form the first magnetic film structure and the second magnetic film structure, as shown in figure 1h.
Preferably, the preparation method of above-mentioned single-chip tri-axis magnetic field sensor also comprise adopt encapsulation lid the bonding structure forming torsion structure is encapsulated.
Such as, as shown in figure 1i, carry out wafer level cover plate for sealing to the structure shown in Fig. 1 h, the structure namely shown in Fig. 1 h covers encapsulation lid 27; Carry out scribing subsequently, obtain the single triaxial magnetic field sensor chip be separated.
Preferably, after aforementioned 5th step, also can form micro electro mechanical device structure, on described first substrate, the second substrate or encapsulation lid, form capacitance detecting integrated circuit structure special etc. in described first substrate or the second substrate.
Wherein, described micro electro mechanical device comprises accelerometer, gyroscope, pressure transducer, humidity sensor, temperature sensor and sonic transducer etc.
As shown in Fig. 1 a to 1h, the single-chip tri-axis magnetic field sensor that above-mentioned preparation method is formed at least comprises: the top silicon layer 211 of the first substrate 11, two first electrode 13, four the second electrode 14, second substrates 21, single shaft torsion structure 25, twin shaft torsion structure 26, first magnetic film structure and the second magnetic film structure.
Wherein, described first magnetic film structure comprises: be sequentially formed at the adhesion layer (i.e. Ta layer 231) on the first torsion film 252 and 253 surface, magnetic-film layer (the NdFeB layer 233 after namely magnetizing) and anti oxidation layer 232(and Ta layer 232); Described second magnetic film structure comprises: be sequentially formed at the adhesion layer (i.e. Ta layer 241) on the second torsion film 264 surface, magnetic-film layer (the NdFeB layer 243 namely after magnetization) and anti oxidation layer (i.e. Ta layer 242); Described single shaft torsion structure 25 comprises: the first elastic beam 251 and two first reverse films 252 and 253, and two the first electrodes 13 are symmetrical about the first elastic beam 251, and reverses film 252 and 253 respectively with first and form capacitance structure; Twin shaft torsion structure 26 comprises: can reverse the 3rd elastic beam 263 of framework 262 described in the second elastic beam 261, the framework reversed 262 connecting described second elastic beam 261, connection and connect multiple second torsion films 264 of described 3rd elastic beam 263, four the second electrodes 14 about the second elastic beam 261 and the 3rd elastic beam 263 symmetrical, and reverse film 264 with one second respectively and form capacitance structure, as shown in figs. 2 a and 2b.
The principle that above-mentioned single-chip tri-axis magnetic field sensor detects magnetic field produces magnetic moment of torsion based on external magnetic field and the first magnetic film structure and the second magnetic film structure effect, causes the torsion of physical construction to realize magnetic field detection.First magnetic film structure plane magnetization, can only produce magnetic moment of torsion with the magnetic fields of the Z-direction perpendicular to sensor plane; Under this magnetic torsional interaction, two first are reversed film 252 and 253 and will produce twisting motion, and with the first elastic beam 251 elastic torsion equalising torque, two first torsion films 252 are corresponding with external magnetic field with the windup-degree of 253; Two first are reversed films 252 and 253 and the first electrode 13 be positioned in substrate 11 and form a pair differential capacitance C1 and C2, and the angle that two first torsion films 252 and 253 reverse changes and causes the capacitive differential of differential capacitance C1, C2 to change; Detect the change of differential capacitance difference by capacitive detection circuit, the external magnetic field strength to be detected perpendicular to chip surface and Z-direction can be detected.Second magnetic film structure, perpendicular to plane magnetization, can produce magnetic moment of torsion with the magnetic fields of the X in chip plane, Y-direction; Under the effect of these two magnetic moments of torsion, can reverse framework 262 and each second reverse film 264 will produce twisting motion respectively, balance with the second elastic beam 261 and the 3rd elastic beam 263 torsional moment respectively, can reverse windup-degree that framework 262 and each second reverses film 264 respectively with X, Y(or Y, X) magnetic field in direction is corresponding, second elastic beam 261 is vertical each other with the 3rd elastic beam 263, can reverse independently of one another; Each second reverses film 264 forms two couples of differential capacitances C3, C4 or C5, C6 with four the second electrodes 14 be positioned in substrate 11, the each second angle change reversing film 264 causes the capacitive differential change of differential capacitance C3, C4 or C5, C6, and the angle change can reversing framework 262 causes differential capacitance C4, C5 or C3, the change of C6 capacitive differential; Detect the change of differential capacitance difference by capacitive detection circuit, the external magnetic field strength being parallel to chip surface can be detected.
The course of work of above-mentioned single-chip tri-axis magnetic field sensor comprise the first magnetic film structure and the second magnetic film structure and external magnetic field produce magnetic moment of torsion, two first reverse film 252 and 253, can reverse that framework 262 and each second reverses the torsion of film 264, differential capacitance difference changes three steps.Closed-loop control is carried out to single-chip tri-axis magnetic field sensor, two first can be made to reverse films 252 and 253, framework 262 and each second can be reversed reverse film 264 and remain near equilibrium position, adopt close-loop feedback capacitance measurement technique to realize the detection of three-axle magnetic field component, it exports as three the closed-loop feedback voltage values corresponding with three-axle magnetic field component.Close-loop feedback capacitance measurement technique can improve the accuracy of detection of single-chip tri-axis magnetic field sensor of the present invention, detection bandwidth and the detection linearity, reduces the cross jamming of three-axle magnetic field.
Preferably, above-mentioned single-chip tri-axis magnetic field sensor also can comprise: the encapsulation lid 27 covering described first magnetic film structure 23 and the second magnetic film structure 24.
Preferably, above-mentioned single-chip tri-axis magnetic field sensor also can comprise: be formed in the capacitance detecting integrated circuit structure special on described first substrate, the second substrate or encapsulation lid 27, be formed in the micro electro mechanical device structure etc. of described first substrate or the second substrate.
Preferably, can adopt and prepare above-mentioned single-chip tri-axis magnetic field sensor based on microcomputer electric surface technology or micro electronmechanical body silicon processing technique, no longer be described in detail at this.
To sum up state institute, single-chip tri-axis magnetic field sensor of the present invention and preparation method, beneficial effect is:
1) form triaxial magnetic field sensor on a single chip, have that volume is little, structure is simple, cost is low, encapsulate the features such as simple;
2) adopt thin magnetic film as magnetic susceptibility structure, do not need during work to apply current excitation, device power consumption is low;
3) adopt differential capacitance detection mode, improve the resolution of device, also there is the features such as little, the anti-extraneous vibration interference performance of temperature drift is strong;
4) adopt MEMS technology to make, be conducive to the mass production of device, reduce device cost;
5) the capacitance detecting special IC of triaxial magnetic field sensor can adopt multilayer encapsulation Integration ofTechnology on magnetic field sensor chip, or adopts semiconductor technology to be directly produced on magnetic field sensor chip, can realize microminiaturized magnetic sensor system.
So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (13)
1. a single-chip tri-axis magnetic field sensor, is characterized in that, described single-chip tri-axis magnetic field sensor at least comprises:
First substrate;
Be formed at least two the first electrodes and at least four second electrodes of the first substrate surface;
With the second substrate of described first substrate bonding, it has the single shaft torsion structure that forms capacitance structure with two the first electrodes respectively and forms the twin shaft torsion structure of capacitance structure respectively with at least four the second electrodes;
Be formed at described single shaft torsion structure surface and the first magnetic film structure of corresponding magnetic moment of torsion can be produced under the magnetic fields of first direction;
Be formed at described twin shaft torsion structure surface and the second magnetic film structure of corresponding magnetic moment of torsion can be produced under the magnetic fields in second and third direction;
Be formed in the micro electro mechanical device structure of described first substrate or the second substrate.
2. single-chip tri-axis magnetic field sensor according to claim 1, is characterized in that: described single shaft torsion structure comprises: as axle the first elastic beam and be connected to described first elastic beam both sides and form first of electric capacity with two the first electrodes respectively and reverse film.
3. single-chip tri-axis magnetic field sensor according to claim 1, is characterized in that: described twin shaft torsion structure comprises: as axle the second elastic beam, connect described second elastic beam the framework reversed, the 3rd elastic beam of framework can be reversed described in connecting as axle and connect described 3rd elastic beam and form multiple second of capacitance structure with second electrode respectively and reverse film.
4. single-chip tri-axis magnetic field sensor according to claim 2, is characterized in that: described first magnetic film structure comprises: be sequentially formed at the adhesion layer on the first torsion film surface, magnetic-film layer and anti oxidation layer.
5. single-chip tri-axis magnetic field sensor according to claim 3, is characterized in that: described second magnetic film structure comprises: be sequentially formed at the adhesion layer on the second torsion film surface, magnetic-film layer and anti oxidation layer.
6. single-chip tri-axis magnetic field sensor according to claim 1, is characterized in that, described micro electro mechanical device comprise in accelerometer, gyroscope, pressure transducer, humidity sensor, temperature sensor, sonic transducer one or more.
7. single-chip tri-axis magnetic field sensor according to claim 1, characterized by further comprising: the encapsulation lid covering described first magnetic film structure and the second magnetic film structure.
8. the single-chip tri-axis magnetic field sensor according to claim 1 or 7, characterized by further comprising: be formed in the capacitance detecting integrated circuit structure special on described first substrate or the second substrate or encapsulation lid.
9. a preparation method for single-chip tri-axis magnetic field sensor, is characterized in that, the preparation method of described single-chip tri-axis magnetic field sensor at least comprises step:
-form at least two the first electrodes and at least four the second electrodes at the first substrate surface;
-pit of accommodating at least two the first electrodes and at least four the second electrodes is formed at the second substrate surface;
-by described first substrate and the second substrate bonding, make pit cover each first electrode and the second electrode;
-the second substrate after bonding forms the first magnetic film structure and the second magnetic film structure, and relative to the position of described first magnetic film structure and the second magnetic film structure, described second substrate is etched, to form single shaft torsion structure and twin shaft torsion structure respectively;
-magnetization treatment is carried out to described first magnetic film structure and the second magnetic film structure, corresponding magnetic moment of torsion can be produced to make the first magnetic film structure under the magnetic fields of first direction, the second magnetic film structure can produce corresponding magnetic moment of torsion under the magnetic fields in second and third direction.
10. the preparation method of single-chip tri-axis magnetic field sensor according to claim 9, characterized by further comprising step: form micro electro mechanical device structure in the first substrate or the second substrate.
The preparation method of 11. single-chip tri-axis magnetic field sensors according to claim 9, is characterized in that: adopt and carry out each step based on microcomputer electric surface technology or micro electronmechanical body silicon processing technique.
The preparation method of 12. single-chip tri-axis magnetic field sensors according to claim 9, characterized by further comprising step :-adopt encapsulation lid to encapsulate the bonding structure forming torsion structure.
The preparation method of 13. single-chip tri-axis magnetic field sensors according to claim 9 or 12, characterized by further comprising step: in described first substrate or the second substrate or encapsulation lid, form capacitance detecting integrated circuit structure special.
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