CN103105592A - Single-chip three-shaft magnetic field sensor and production method - Google Patents
Single-chip three-shaft magnetic field sensor and production method Download PDFInfo
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- CN103105592A CN103105592A CN2013100329090A CN201310032909A CN103105592A CN 103105592 A CN103105592 A CN 103105592A CN 2013100329090 A CN2013100329090 A CN 2013100329090A CN 201310032909 A CN201310032909 A CN 201310032909A CN 103105592 A CN103105592 A CN 103105592A
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Abstract
The invention provides a single-chip three-shaft magnetic field sensor and a production method. The single-chip three-shaft magnetic field sensor at least comprises a first substrate, at least two first electrodes, at least four second electrodes, a second substrate, a single-shaft rotation structure, a double-shaft rotation structure, a first magnetic film structure and a second magnetic film structure, wherein the first electrodes and the second electrodes are formed on the surface of the first substrate, the second substrate and the first substrate bond together through keys, the second substrate is provided with the single-shaft rotation structure and the double-shaft rotation structure, the single-shaft rotation structure and each of the two first electrodes form a capacitor structure, and the double-shaft rotation structure and each of the four second electrodes form a capacitor structure. The first magnetic film structure is formed on the surface of the single-shaft rotation structure and can generate corresponding torque under the action of a magnetic field in a first direction, and the second magnetic film structure is formed on the surface of the double-shaft rotation structure and can generate corresponding torque under the action of a magnetic field in a second direction and a magnetic field in a third direction. The single-chip three-shaft magnetic field sensor has the advantages of being high in sensitivity, small in size, low in power consumption and cost, easy to package and the like.
Description
Technical field
The present invention relates to sensor field, particularly relate to a kind of single-chip tri-axis magnetic field sensor and preparation method.
Background technology
Magnetic field sensor refers to magnetic signal or can be converted to a class sensor of the signal sensitivity of magnetic signal.Magnetic field sensor is widely used in the various application scenarios such as magnetic navigation, intelligent transportation, intelligent grid, automotive electronics, ferromagnetic material detection.Magnetic field itself is a vector field, and according to the detection characteristic of Magnetic Sensor, magnetic field sensor can be divided into scalar Magnetic Sensor and the large class of vector Magnetic Sensor two.The scalar Magnetic Sensor only detects the size in magnetic field, does not detect the direction in magnetic field, as optically pumped magnetometer, is only applicable to special application.The vector Magnetic Sensor can not only detect the size in magnetic field, can also detect the direction in magnetic field.If need to measure complete magnetic vector information, need three axial vector magnetic field sensors.For most Magnetic Sensor application scenario such as magnetic navigation, electronic compass, need to measure space magnetic field vector arbitrarily, therefore can have demand widely to simultaneously-measured three axis vector magnetic sensors of space magnetic field size and Orientation, market outlook are wide, have a high potential.
Three axis vector magnetic sensors normally adopt orthogonal three single shaft vector Magnetic Sensor assembled package to form, and wherein single shaft vector Magnetic Sensor is the sensor that can only measure the component of a direction of magnetic vector.Commercialization at present or the vector Magnetic Sensor of studying as Hall magnetic sensor, anisotropic magnetoresistive sensor (AMR), fluxgate and micro electronmechanical (MEMS) Magnetic Sensor, all adopt multi-chip assembled package method to form three axis vector magnetic sensors.
At present, the state-of-the-art of vector Magnetic Sensor is as follows:
1) Hall magnetic sensor is a kind of magnetic field sensor that utilizes the Hall effect making of semiconductor material.Pass to exciting current I at wafer two ends, when the vertical direction of wafer exists magnetic induction density to be the uniform magnetic field of B, on the direction perpendicular to electric current and magnetic field, producing electric potential difference is the Hall voltage of UH, and the Hall voltage size is directly proportional to magnetic field.Hall magnetic sensor is only responsive to the magnetic field vertical with direction of current or magnetic-field component, is a kind of vector Magnetic Sensor.Because the measurement of Hall magnetic sensor need to provide current excitation, therefore its power consumption is higher, magnetic field resolution is also lower; In addition, technical very difficult owing to directly making three orthogonal Hall elements on single-chip, utilize Hall magnetic sensor to make the package integrated method that magnetic sensor adopts multi-chip usually, this can increase size, power consumption and the packaging cost of three axle Hall magnetic sensors.For example, three axle Hall magnetic sensors of existing Melexis company development can be measured the magnetic field of 20-70mT, and magnetic field resolution is 1 μ T magnitude.
2) anisotropic magnetoresistive sensor (AMR) is the Magnetic Sensor of making according to the anisotropic magneto-resistive effect of ferromagnetic material.Ferromagnetic material (as permalloy) has anisotropic magnetoresistance, and when giving banded permalloy material by electric current I, its magneto-resistor depends on the angle of sense of current and direction of magnetization.The ultimate principle of AMR magnetoresistive transducer is: in anisotropic magnetic material outside magnetic field B, its direction of magnetization rotates, and when direction of magnetization turns to perpendicular to sense of current, the magneto-resistor of material will reduce; When direction of magnetization turns to when being parallel to sense of current, the magneto-resistor of material will increase.The AMR magnetoresistive transducer is general adopts four magneto-resistors to consist of the detection electric bridge, and under tested magnetic field B effect, wherein two resistances increase, two other resistance reduces, in its range of linearity, the output voltage of electric bridge to be directly proportional by measuring magnetic field, realize the detection of external magnetic field.Yet the power consumption of the electric bridge testing circuit of AMR magnetoresistive transducer is higher, and need to make resetting coil in sensor chip, needs very large exciting current when resetting, and its manufacturing process is also incompatible with CMOS technique; In addition, magnetic sensor is also to be formed by assembled package by the AMR sensor of three single shafts or a single shaft and a twin shaft AMR sensor, equally also can increase volume and the packaging cost of device.For example, the AMR magnetic resistance Magnetic Sensor minimum of Honeywell company development can detect the magnetic field of 8.5nT.
3) giant magnetoresistance (GMR) Magnetic Sensor is the lifting of AMR technology, its detection sensitivity has significantly raising, but also having technical difficulty aspect magnetic sensor making, is also to adopt by the GMR sensor of three single shafts or a single shaft and a twin shaft GMR sensor to form by assembled package usually.
4) fluxgate sensor forms around magnetizing coil, inductive coil by magnetic core is outer, and its magnetic field resolution can reach the 0.1nT magnitude.The magnetic core of fluxgate sensor adopts the soft magnetic material that magnetic permeability is high, coercive force is little, and the exciting curent during work in magnetizing coil is activated to magnetic core saturated, and its excitation power consumption is very high.For improving measuring accuracy, fluxgate sensor adopts bimag or track-shaped magnetic core structure to realize differential signal output.Three axis fluxgate sensors are also that the assembled package by single-axis sensors forms, and the three axis fluxgate sensor bulk that obtain are large, encapsulation precision requires highly, with high costs, only limit to high-end application scenario.The high resolving power of fluxgate generally only can obtain on traditional fluxgate magnetic sensor, and for the fluxgate sensor of microminiaturization, along with dwindling of size, the signal to noise ratio (S/N ratio) of measuring accuracy, output, temperature characterisitic and stability also can decrease.The microminiaturization of fluxgate sensor need to be made the miniature magnetic core of low-resistance miniature three-dimensional coil and high magnetic permeability, and is technical very difficult.
4) the MEMS magnetic field sensor can satisfy miniaturization, low-power consumption and requirement cheaply, has obtained fast development since the nineties in last century.The MEMS Magnetic Sensor comprises two kinds of MEMS dynamic magnetic sensor and MEMS static-magnetic sensors.The survey magnetic principle of MEMS dynamic magnetic sensor is to drive micro mechanical structure by the Lorentz force that external magnetic field and exciting current interaction produce to detect magnetic field.During working sensor, micro mechanical structure is excited to resonant condition, and high Q value can increase substantially the sensitivity of sensor.For the Q value that obtains trying one's best high, must carry out the Vacuum Package of sensor, this has increased difficulty and the cost of manufacture craft greatly.This class MEMS Magnetic Sensor need to apply exciting current, and power consumption is higher, and owing to adopting the resonance working method, the working sensor bandwidth is narrow.With this class be operated in the MEMS dynamic magnetic sensor of resonant condition corresponding be MEMS static-magnetic sensor.Magnetic film and micro mechanical structure that MEMS static-magnetic sensor produces magnetic force combine, and its advantage is need not to add extra current excitation again and carry out Vacuum Package, thereby has significantly reduced power consumption and cost, have simultaneously simple in structure, the characteristics such as cost is low.
The research-and-development activity of MEMS Magnetic Sensor mainly concentrates on the MEMS Magnetic Sensor of single shaft at present, the method that realizes magnetic sensor is that (wherein one is single shaft MEMS Magnetic Sensor for three single shaft MEMS magnetic sensor chips or two magnetic sensor chips, another piece is the biaxial MEMS Magnetic Sensor) mutually the vertical cartel encapsulation form, encapsulation requires high, has also increased simultaneously volume and the packaging cost of device.Therefore, utilize the advantage of MEMS technology, development single-chip high sensitivity, low-power consumption, magnetic sensor has important practical value and market outlook cheaply.
Summary of the invention
The deficiencies in the prior art in view of the above, the object of the present invention is to provide a kind of highly sensitive, size is little, low in energy consumption, low-cost, the simple single-chip tri-axis magnetic field sensor of encapsulation.
Another object of the present invention is to provide a kind of preparation method of single-chip tri-axis magnetic field sensor.
Reach for achieving the above object other relevant purposes, the invention provides a kind of single-chip tri-axis magnetic field sensor, it comprises at least:
The first substrate;
Be formed at least two the first electrodes and at least four the second electrodes of the first substrate surface;
With the second substrate of described the first substrate bonding, it has with two the first electrodes and forms respectively the single shaft torsion structure of capacitance structure and form respectively the twin shaft torsion structure of capacitance structure with at least four the second electrodes;
Be formed at described single shaft torsion structure surface and can produce the first magnetic film structure of corresponding magnetic moment of torsion under the magnetic fields of first direction;
Be formed at described twin shaft torsion structure surface and can produce the second magnetic film structure of corresponding magnetic moment of torsion under the magnetic fields of second and third direction.
Preferably, described single shaft torsion structure comprises: as the first elastic beam of axle and be connected to described the first elastic beam both sides and form at least two first of electric capacity with first electrode respectively and reverse films.
Preferably, described twin shaft torsion structure comprises: as the second elastic beam of axle, connect the framework reversed of described the second elastic beam, as axle and connect described the 3rd elastic beam that reverses framework, and connect described the 3rd elastic beam and form a plurality of second of capacitance structure with second electrode respectively and reverse films.
Preferably, described the first magnetic film structure comprises: sequentially be formed at the first adhesion layer, magnetic rete and anti oxidation layer that reverses the film surface.
Preferably, described the second magnetic film structure comprises: sequentially be formed at the second adhesion layer, magnetic rete and anti oxidation layer that reverses the film surface.
Preferably, described single-chip tri-axis magnetic field sensor also comprises: be formed on described the first substrate, the second substrate or encapsulation lid the capacitance detecting integrated circuit structure special, be formed on the micro electro mechanical device structure of described the first substrate or the second substrate etc.; More preferably, described micro electro mechanical device comprises one or more in accelerometer, gyroscope, pressure transducer, humidity sensor, temperature sensor, sonic transducer.
Preferably, described single-chip tri-axis magnetic field sensor also comprises: the encapsulation lid that covers described the first magnetic film structure and the second magnetic film structure.
The present invention also provides a kind of preparation method of single-chip tri-axis magnetic field sensor, and it comprises step at least:
-form at least two the first electrodes and at least four the second electrodes at the first substrate surface;
-form at the second substrate surface the pit that accommodating at least two the first electrodes reach at least four the second electrodes;
-with described the first substrate and the second substrate bonding, make pit cover each the first electrode and second electrode;
-formation the first magnetic film structure and the second magnetic film structure in the second substrate after bonding, and with respect to the position of described the first magnetic film structure and the second magnetic film structure, etching is carried out in described the second substrate, to form respectively single shaft torsion structure and twin shaft torsion structure;
-described the first magnetic film structure and the second magnetic film structure are magnetized processing, so that the first magnetic film structure can produce corresponding magnetic moment of torsion under the magnetic fields in second and third direction at the corresponding magnetic moment of torsion of generation, the second magnetic film structure under the magnetic fields of first direction.
Preferably, can adopt based on microcomputer electric surface technology or micro electronmechanical body silicon processing technique and carry out aforementioned each step.
Preferably, the preparation method of described single-chip tri-axis magnetic field sensor also comprises :-adopt to encapsulate the step that lid encapsulates the bonding structure that forms torsion structure.
Preferably, the preparation method of described single-chip tri-axis magnetic field sensor also is included in the first substrate or the second substrate and forms the micro electro mechanical device structure, forms the step such as capacitance detecting integrated circuit structure special on the first substrate, the second substrate or encapsulation lid.
As mentioned above, single-chip tri-axis magnetic field sensor of the present invention and preparation method, has following beneficial effect: directly in the sensor chip fabrication phase, a twin shaft Magnetic Sensor and a uniaxial magnetic quantity sensor are integrated on one chip, greatly simplify the encapsulation of triaxial magnetic field sensor, but had the characteristics such as miniaturization, high sensitivity, the making of low cost mass.
Description of drawings
Fig. 1 a to Fig. 1 i is shown as the preparation method's of single-chip tri-axis magnetic field sensor of the present invention process flow diagram.
Fig. 2 a is shown as the electrode schematic diagram of single-chip tri-axis magnetic field sensor of the present invention.
Fig. 2 b is shown as the vertical view of single-chip tri-axis magnetic field sensor of the present invention.
The element numbers explanation
11 glass sheet
12 metal aluminium laminations
13 first electrodes
14 second electrodes
21 soi wafers
211 top layer silicon
212 oxide layers
213 substrate silicon layer
22 pits
23,24 alloy firms
231,241 Ta layers
232,242 Ta layers
233,243 NdFeB layers
25 single shaft torsion structures
251 first elastic beams
252,253 first reverse film
26 twin shaft torsion structures
261 second elastic beams
262 can reverse framework
263 the 3rd elastic beams
264 second reverse film
27 lids
Embodiment
Below by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this instructions.The present invention can also be implemented or be used by other different embodiment, and the every details in this instructions also can be based on different viewpoints and application, carries out various modifications or change under spirit of the present invention not deviating from.
See also Fig. 1 a to Fig. 2 b.Need to prove, the diagram that provides in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy only show in graphic with the present invention in relevant assembly but not component count, shape and size drafting when implementing according to reality, during its actual enforcement, kenel, quantity and the ratio of each assembly can be a kind of random change, and its assembly layout kenel also may be more complicated.
The preparation method of single-chip tri-axis magnetic field sensor of the present invention comprises the following steps at least:
The first step: form at least two the first electrodes and at least four the second electrodes at the first substrate surface.
For example, as shown in Figure 1a, adopt commercial glass sheet 11 as the first substrate, glass sheet 11 thickness are 450 μ m approximately, and at its surface deposition metal aluminium lamination 12, thickness is 0.5 μ m by magnetron sputtering; Subsequently, in metal aluminium lamination 12 surface coatings, photoetching, then after adopting phosphoric acid corrosion, remove photoresist, obtain 2 the first electrodes 13 and 4 the second electrodes 14, as shown in Fig. 1 b.
Second step: the pit that forms accommodating at least two the first electrodes and at least four the second electrodes at the second substrate surface.
For example, as shown in Fig. 1 c, adopt commercial soi wafer 21 as the second substrate, the top layer silicon 211 of this soi wafer 21 is heavily doped low-resistance silicon, and the thickness of top layer silicon 211 is 30 μ m, and the thickness of intermediate oxide layer 212 is 2 μ m, and substrate silicon layer 213 thickness are 380 μ m.By thermal oxide, at soi wafer 21 superficial growth thickness be
SiO
2, by photoetching, optionally remove the SiO that grows on top layer silicon
2, and this soi wafer 21 is removed put into 40 ℃, the KOH solution corrosion of concentration 40% after photoresists after one hour, forming pit 22, pit 22 degree of depth are about 5 μ m.
The 3rd step: with described the first substrate and the second substrate bonding, make pit cover each the first electrode and second electrode.
For example, with the first underlying structure shown in Fig. 1 b with after the second underlying structure shown in Fig. 1 c is aimed at, bonding, adopt anode linkage technique to carry out silicon on glass bonding, bonding face is the one side of soi wafer 21 top layer silicon and glass sheet 11 deposition of aluminum electrodes, make pit 22 cover each the first electrode 13 and second electrode 14, as shown in Fig. 1 d.
The 4th step: form the first magnetic film structure and the second magnetic film structure in the second substrate after bonding, and with respect to the position of described the first magnetic film structure and the second magnetic film structure, etching is carried out in described the second substrate, to form respectively single shaft torsion structure and twin shaft torsion structure.
For example, first adopt the substrate silicon of the soi wafer 21 of the structure shown in KOH erosion removal Fig. 1 d, adopt subsequently the buried regions SiO of HF erosion removal soi wafer 21
2As shown in Fig. 1 e; Subsequently, recycling is made Ta/NdFeB/Ta three- layer alloy film 23 and 24, as shown in Fig. 1 f through the hard mask of monocrystalline silicon piece conduct of through corrosion on silicon thin film 211; Wherein, Ta layer 231,232,241 and 242 thickness are about 50nm, and NdFeB layer 233 and 243 thickness are about 1 μ m, and alloy firm 23 and 24 completes and rear it carried out annealing in process.
Then, gluing, photoetching on silicon thin film 211, the ICP etching discharges single shaft torsion structure 25 and twin shaft torsion structure 26, as shown in Fig. 1 g.Wherein, described single shaft torsion structure 25 comprises as the first elastic beam 251 of axle and is connected to first of described the first elastic beam 251 both sides and reverses film 252 and 253, the first and reverse films 252 and 253 and form capacitance structures with first electrode 13 respectively; Described twin shaft torsion structure 26 comprises: as the second elastic beam 261 of axle, connect the framework reversed 262 of described the second elastic beam 261, as axle and connect described the 3rd elastic beam 263 that reverses framework 262, and connect described the 3rd elastic beam 263 and form 4 second of capacitance structures with second electrode 14 respectively and reverse films 264.
The 5th step: described the first magnetic film structure and the second magnetic film structure are magnetized processing, so that the first magnetic film structure can produce corresponding magnetic moment of torsion under the magnetic fields in second and third direction at the corresponding magnetic moment of torsion of generation, the second magnetic film structure under the magnetic fields of first direction.
For example, structure shown in Fig. 1 g is put into the magnetization that uniform strong magnetic field is completed alloy firm 23 and 24, wherein, first alloy film 23 and 24 carries out the magnetization of direction in the plane of wafer level, the magnetization of adopting again local magnetized equipment alloy film 24 to carry out perpendicular to the chip plane, to form the first magnetic film structure and the second magnetic film structure, as shown in Fig. 1 h.
Preferably, the preparation method of above-mentioned single-chip tri-axis magnetic field sensor comprises that also employing encapsulation lid encapsulates the bonding structure that forms torsion structure.
For example, as shown in Fig. 1 i, the structure shown in Fig. 1 h is carried out the wafer level cover plate for sealing, namely cover encapsulation lid 27 in the structure shown in Fig. 1 h; Carry out subsequently scribing, the single triaxial magnetic field sensor chip that obtains separating.
Preferably, after aforementioned the 5th step, also can form the micro electro mechanical device structure, form capacitance detecting integrated circuit structure special etc. on described the first substrate, the second substrate or encapsulation lid in described the first substrate or the second substrate.
Wherein, described micro electro mechanical device comprises accelerometer, gyroscope, pressure transducer, humidity sensor, temperature sensor, reaches sonic transducer etc.
As shown in Fig. 1 a to 1h, the single-chip tri-axis magnetic field sensor that above-mentioned preparation method forms comprises at least: the top silicon layer 211 of the first substrate 11, two the first electrodes 13, four the second electrodes 14, the second substrate 21, single shaft torsion structure 25, twin shaft torsion structure 26, the first magnetic film structure, and the second magnetic film structure.
Wherein, described the first magnetic film structure comprises: sequentially being formed at the first adhesion layer (being Ta layer 231), magnetic rete (i.e. NdFeB layer 233 after the magnetization) and anti oxidation layer 232(that reverses film 252 and 253 surfaces is Ta layer 232); Described the second magnetic film structure comprises: sequentially be formed at the second adhesion layer (being Ta layer 241), magnetic rete (i.e. NdFeB layer 243 after the magnetization) and anti oxidation layer (being Ta layer 242) that reverses film 264 surfaces; Described single shaft torsion structure 25 comprises: the first elastic beam 251 and two first torsion films 252 and 253, two the first electrodes 13 are symmetrical about the first elastic beam 251, and reverse film 252 and 253 formation capacitance structures with first respectively; Twin shaft torsion structure 26 comprises: the second elastic beam 261, connect described the second elastic beam 261 the framework reversed 262, connect described the 3rd elastic beam 263 that reverses framework 262, and connect a plurality of second of described the 3rd elastic beam 263 and reverse films 264, four the second electrodes 14 are symmetrical about the second elastic beam 261 and the 3rd elastic beam 263, and reverse film 264 formation capacitance structures with one second respectively, as shown in Fig. 2 a and 2b.
The principle that above-mentioned single-chip tri-axis magnetic field sensor detects magnetic field is based on external magnetic field and the first magnetic film structure and the second magnetic film structure effect generation magnetic moment of torsion, causes the torsion of physical construction to realize magnetic field detection.Magnetization in the first magnetic film structure plane can only produce the magnetic moment of torsion with the magnetic fields perpendicular to the Z direction of sensor plane; Under this magnetic torsional interaction, two first are reversed films 252 and 253 and will produce twisting motion, and with the first elastic beam 251 elastic torsion equalising torques, two first torsion films 252 are corresponding with external magnetic field with 253 windup-degree; Two first are reversed film 252 and consist of a pair of differential capacitance C1 and C2 with 253 with the first electrode 13 that is positioned in substrate 11, and two first are reversed the electric capacity difference variation that film 252 and the angles variation of 253 torsions cause differential capacitance C1, C2; Detecting the differential capacitance difference by capacitive detection circuit and change, can detection of vertical be the external magnetic field intensity to be detected of Z direction in chip surface.The second magnetic film structure is perpendicular to magnetizing in the plane, can with the chip plane in X, the magnetic fields of Y-direction produce the magnetic moment of torsion; Under the effect of these two magnetic moments of torsion, framework 262 can be reversed and twisting motion will be produced respectively with each the second torsion film 264, respectively with the second elastic beam 261 and the 3rd elastic beam 263 torsional moment balances, can reverse windup-degree that framework 262 and each second reverse film 264 respectively with X, Y(or Y, X) magnetic field of direction is corresponding, the second elastic beam 261 is vertical each other with the 3rd elastic beam 263, can reverse independently of one another; Each the second torsion film 264 consists of two couples of differential capacitance C3, C4 or C5, C6 with four the second electrodes 14 that are positioned in substrate 11, each second angle of reversing film 264 changes the electric capacity difference that causes differential capacitance C3, C4 or C5, C6 and changes, and the angle that can reverse framework 262 changes and causes differential capacitance C4, C5 or C3, C6 electric capacity difference to change; Detect the differential capacitance difference by capacitive detection circuit and change, can detect the external magnetic field intensity that is parallel to chip surface.
The course of work of above-mentioned single-chip tri-axis magnetic field sensor comprises that the first magnetic film structure and the second magnetic film structure and external magnetic field produce magnetic moment of torsion, two first and reverse film 252 and 253, can reverse framework 262 and each second torsion, three steps of differential capacitance difference variation of reversing film 264.The single-chip tri-axis magnetic field sensor is carried out closed-loop control, can make two first to reverse films 252 and 253, can reverse framework 262 and each the second torsion film 264 remains near the equilibrium position, adopt close-loop feedback capacitance detecting technology to realize the detection of three-axle magnetic field component, it is output as three the close-loop feedback magnitudes of voltage corresponding with the three-axle magnetic field component.Close-loop feedback capacitance detecting technology can be improved accuracy of detection, detection bandwidth and the detection linearity of single-chip tri-axis magnetic field sensor of the present invention, reduces the intersection of three-axle magnetic field and disturbs.
Preferably, above-mentioned single-chip tri-axis magnetic field sensor also can comprise: the encapsulation lid 27 that covers described the first magnetic film structure 23 and the second magnetic film structure 24.
Preferably, above-mentioned single-chip tri-axis magnetic field sensor also can comprise: be formed on capacitance detecting integrated circuit structure special on described the first substrate, the second substrate or encapsulation lid 27, be formed on the micro electro mechanical device structure of described the first substrate or the second substrate etc.
Preferably, can adopt based on microcomputer electric surface technology or micro electronmechanical body silicon processing technique to prepare above-mentioned single-chip tri-axis magnetic field sensor, no longer be described in detail at this.
To sum up state institute, single-chip tri-axis magnetic field sensor of the present invention and preparation method, beneficial effect is:
1) form triaxial magnetic field sensor on single-chip, have the characteristics such as volume is little, simple in structure, cost is low, encapsulation is simple;
2) adopt thin magnetic film as the magnetic susceptibility structure, do not need to apply current excitation during work, device power consumption is low;
3) adopt the differential capacitance detection mode, improved the resolution of device, also have the characteristics such as temperature drift is little, anti-extraneous vibration interference performance is strong;
4) adopt the MEMS fabrication techniques, be conducive to the mass production of device, reduce device cost;
5) the capacitance detecting special IC of triaxial magnetic field sensor can adopt the multilayer encapsulation technology to be integrated on magnetic field sensor chip, or adopts semiconductor technology directly to be produced on magnetic field sensor chip, can realize microminiaturized magnetic sensor system.
So the present invention has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not is used for restriction the present invention.Any person skilled in the art scholar all can under spirit of the present invention and category, modify or change above-described embodiment.Therefore, have in technical field under such as and know that usually the knowledgeable modifies or changes not breaking away from all equivalences of completing under disclosed spirit and technological thought, must be contained by claim of the present invention.
Claims (14)
1. a single-chip tri-axis magnetic field sensor, is characterized in that, described single-chip tri-axis magnetic field sensor comprises at least:
The first substrate;
Be formed at least two the first electrodes and at least four the second electrodes of the first substrate surface;
With the second substrate of described the first substrate bonding, it has with two the first electrodes and forms respectively the single shaft torsion structure of capacitance structure and form respectively the twin shaft torsion structure of capacitance structure with at least four the second electrodes;
Be formed at described single shaft torsion structure surface and can produce the first magnetic film structure of corresponding magnetic moment of torsion under the magnetic fields of first direction;
Be formed at described twin shaft torsion structure surface and can produce the second magnetic film structure of corresponding magnetic moment of torsion under the magnetic fields of second and third direction.
2. single-chip tri-axis magnetic field sensor according to claim 1, it is characterized in that: described single shaft torsion structure comprises: as the first elastic beam of axle and be connected to described the first elastic beam both sides and form first of electric capacity with two the first electrodes respectively and reverse film.
3. single-chip tri-axis magnetic field sensor according to claim 1, it is characterized in that: described twin shaft torsion structure comprises: as the second elastic beam of axle, connect the framework reversed of described the second elastic beam, as axle and connect described the 3rd elastic beam that reverses framework, and connect described the 3rd elastic beam and form a plurality of second of capacitance structure with second electrode respectively and reverse films.
4. single-chip tri-axis magnetic field sensor according to claim 2, it is characterized in that: described the first magnetic film structure comprises: sequentially be formed at the first adhesion layer, magnetic rete and anti oxidation layer that reverses the film surface.
5. single-chip tri-axis magnetic field sensor according to claim 3, it is characterized in that: described the second magnetic film structure comprises: sequentially be formed at the second adhesion layer, magnetic rete and anti oxidation layer that reverses the film surface.
6. single-chip tri-axis magnetic field sensor according to claim 1, characterized by further comprising: the micro electro mechanical device structure that is formed on described the first substrate or the second substrate.
7. single-chip tri-axis magnetic field sensor according to claim 6, is characterized in that, described micro electro mechanical device comprises one or more in accelerometer, gyroscope, pressure transducer, humidity sensor, temperature sensor, sonic transducer.
8. single-chip tri-axis magnetic field sensor according to claim 1, characterized by further comprising: the encapsulation lid that covers described the first magnetic film structure and the second magnetic film structure.
9. according to claim 1 or 8 described single-chip tri-axis magnetic field sensors, characterized by further comprising: be formed on the capacitance detecting integrated circuit structure special on described the first substrate or the second substrate or encapsulation lid.
10. the preparation method of a single-chip tri-axis magnetic field sensor, is characterized in that, the preparation method of described single-chip tri-axis magnetic field sensor comprises step at least:
-form at least two the first electrodes and at least four the second electrodes at the first substrate surface;
-form at the second substrate surface the pit that accommodating at least two the first electrodes reach at least four the second electrodes;
-with described the first substrate and the second substrate bonding, make pit cover each the first electrode and second electrode;
-formation the first magnetic film structure and the second magnetic film structure in the second substrate after bonding, and with respect to the position of described the first magnetic film structure and the second magnetic film structure, etching is carried out in described the second substrate, to form respectively single shaft torsion structure and twin shaft torsion structure;
-described the first magnetic film structure and the second magnetic film structure are magnetized processing, so that the first magnetic film structure can produce corresponding magnetic moment of torsion under the magnetic fields in second and third direction at the corresponding magnetic moment of torsion of generation, the second magnetic film structure under the magnetic fields of first direction.
11. the preparation method of single-chip tri-axis magnetic field sensor according to claim 10 characterized by further comprising step: form the micro electro mechanical device structure in the first substrate or the second substrate.
12. the preparation method of single-chip tri-axis magnetic field sensor according to claim 10 is characterized in that: adopt and carry out each step based on microcomputer electric surface technology or micro electronmechanical body silicon processing technique.
13. the preparation method of single-chip tri-axis magnetic field sensor according to claim 10 characterized by further comprising step :-adopt the encapsulation lid that the bonding structure that forms torsion structure is encapsulated.
14. the preparation method of according to claim 10 or 13 described single-chip tri-axis magnetic field sensors characterized by further comprising step: form the capacitance detecting integrated circuit structure special on described the first substrate or the second substrate or encapsulation lid.
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103323795A (en) * | 2013-06-21 | 2013-09-25 | 中国人民解放军国防科学技术大学 | Integrated three-axis magnetic sensor |
| CN103472410A (en) * | 2013-09-30 | 2013-12-25 | 东南大学 | Dual-torsion-pendulum type micro-electro-mechanical magnetic filed sensor |
| CN104197910A (en) * | 2014-08-08 | 2014-12-10 | 上海交通大学 | Microsphere-based miniature hemispherical resonant gyroscope and manufacturing method thereof |
| CN104237952A (en) * | 2014-10-09 | 2014-12-24 | 广州市香港科大霍英东研究院 | Method for recognizing object in wall |
| CN105047814A (en) * | 2015-05-29 | 2015-11-11 | 清华大学 | Si-based magnetic sensing device with low magnetic field and giant magnetoresistance, preparation method and performance testing method |
| CN105353326A (en) * | 2015-10-23 | 2016-02-24 | 中国科学院上海微系统与信息技术研究所 | Magnetic field sensor based on torsional blazed grating detection, and preparation method therefor |
| CN106443525A (en) * | 2016-11-17 | 2017-02-22 | 中国科学院上海微系统与信息技术研究所 | Torsion-type micro mechanical magnetic field sensor and preparation method thereof |
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| CN103323795B (en) * | 2013-06-21 | 2015-04-08 | 中国人民解放军国防科学技术大学 | Integrated three-axis magnetic sensor |
| CN103323795A (en) * | 2013-06-21 | 2013-09-25 | 中国人民解放军国防科学技术大学 | Integrated three-axis magnetic sensor |
| CN103472410A (en) * | 2013-09-30 | 2013-12-25 | 东南大学 | Dual-torsion-pendulum type micro-electro-mechanical magnetic filed sensor |
| CN103472410B (en) * | 2013-09-30 | 2015-09-23 | 东南大学 | A kind of two micro electronmechanical magnetic field sensor of torsional pendulum type |
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| CN106771360B (en) * | 2016-11-22 | 2019-04-09 | 三峡大学 | A kind of single shaft mems accelerometer |
| CN106706959A (en) * | 2016-11-22 | 2017-05-24 | 三峡大学 | Single-axis MEMS accelerometer based on anisotropy magnetoresistance effect |
| CN107229021A (en) * | 2017-05-22 | 2017-10-03 | 中国科学院上海微系统与信息技术研究所 | Three-dimension reconstruction component and preparation method |
| CN107229021B (en) * | 2017-05-22 | 2019-07-19 | 中国科学院上海微系统与信息技术研究所 | Three-dimension reconstruction component and preparation method |
| CN111190126A (en) * | 2017-06-09 | 2020-05-22 | 合肥工业大学 | MEMS magnetic field sensor adopting folded beam structure, preparation process and application |
| CN111190126B (en) * | 2017-06-09 | 2022-06-07 | 温州大学 | Preparation method of MEMS magnetic field sensor adopting folded beam structure |
| CN110376537A (en) * | 2017-12-19 | 2019-10-25 | 大连理工大学 | A kind of semiconductor three-dimensional Hall sensor production method suitable for high-temperature work environment |
| CN110376537B (en) * | 2017-12-19 | 2020-07-24 | 大连理工大学 | Manufacturing method of semiconductor three-dimensional Hall sensor suitable for high-temperature working environment |
| CN108469592A (en) * | 2018-03-20 | 2018-08-31 | 中北大学 | Miniature magnetic capacitance sensor based on magnetic accumulator and magnetic nano particle composite material |
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