A kind of micromechanical gyro based on tunnel magneto-resistance effect
Technical field
The present invention relates to micro-inertial navigation technology association area, in particular to a kind of based on tunnel magneto-resistance effect
Micromechanical gyro.
Background technology
At present, the conventional detection mode of micromechanical gyro is condenser type and pressure resistance type, and pressure resistance type is based on highly doped silicon
What piezoresistive effect principle was realized, the pressure-sensitive device of highly doped silicon formation has stronger dependence to temperature, and it is by pressure-sensitive device group
Into electric bridge detection circuit also can cause sensitivity drift because of temperature change;The raising of condenser type precision is to utilize to increase capacitive surface
Product, due to the microminaturization of device, its precision is difficult to improve because of the diminution of effective capacitance area.
The measurement of micromechanical gyro angular velocity realizes that power electricity conversion is completed by detection means, its sensitivity, point
Resolution is highly important, and because gyroscope is miniaturized and integrated, the sensitizing range of detection reduces therewith, so make detection
The indexs such as sensitivity, resolution ratio have reached the limiting condition of sensitizing range detection, so as to limit entering for gyroscope accuracy of detection
One step is improved, it is difficult to the need for meeting modern military, civilian equipment.
Spin effect of the tunnel magneto-resistance effect based on electronics, insulation is separated with pinned magnetic layer and free magnetic layer middle ware
The magnetic multilayer film structure of the non-magnetosphere of body or semiconductor, because the electric current between pinned magnetic layer and free magnetic layer passes through
Tunneling effect based on electronics, therefore claim this multi-layer film structure to be referred to as MTJ (MTJ, Magnetic Tunnel
Junction).This MTJ is under the effect of the voltage of insulating barrier, and its tunnel current and tunnel resistor depend on two
The relative orientation of individual ferromagnetic layer (the pinned magnetic layer and free magnetic layer) intensity of magnetization.When free magnetic layer is in the effect in outfield
Under, its magnetization direction changes, and the direction of magnetization of pinning layer is constant, now two magnetospheric intensity of magnetization relative orientations
Change, then can tie observing big resistance variations in the magnetic tunnel across insulating barrier, this physical effect is exactly
Based on electronics in the tunneling effect of insulating barrier, therefore referred to as tunneling magnetoresistance (TMR, Tunneling
Magnetoresistance).That is TMR Magnetic Sensors are to cause magneto-resistor to change using the change in magnetic field, the opposing party
Face, we can measure the change of external magnetic field by observing the resistance variations of TMR Magnetic Sensors.
Actual TMR device and its manufacturing process is complicated more than above trilamellar membrane, but with regard to magnetic sensor
For, one can consider that TMR sensor is exactly a resistance, simply the resistance value of TMR sensor is with externally-applied magnetic field value
Change, its resistance changes, and this change is for aluminium oxide Al2O3, can for magnesia MgO up to 30~50%
Up to 200%, therefore its output is considerable, and sensitivity is very high.Just because of TMR these advantages, TMR is in hard disk magnetic
The high high-precision technical field substitution GMR head of the head performance requirements such as this pair of job stabilitys, thus TMR performance
Through being subjected to most stringent test with the large-scale application of TMR magnetic sensors, its excellent performance will be with its production
The development of industry, and in terms of penetrating into sensor industry and application field, brand-new skill is provided for many sensor application fields
Art solution.
The content of the invention
The present invention is intended to provide a kind of micromechanical gyro, the micromechanical gyro is the micromechanics top based on tunnel magneto-resistance effect
Spiral shell, can improve the accuracy of detection of micromechanical gyro.
The invention provides a kind of micromechanical gyro, it includes:
A kind of micromechanical gyro based on tunnel magneto-resistance effect, including:It is bonded matrix, permanent magnet and microthrust test angular speed quick
Feeling has a groove at body, the bonding matrix geometric center, the permanent magnet is arranged on above-mentioned groove center position;It is described micro-
Gyro angular speed sensitive body is arranged on side of the permanent magnet in contrast to bonding matrix, and the microthrust test angular speed sensitive body is fixed
On bonding matrix;
The microthrust test angular speed sensitive body includes being correspondingly arranged at the sensitive measurement body above groove, the sensitive measurement
Body upper surface is provided with tunnel mistor, through hole and puts beam groove, and the tunnel mistor is located in sensitive measurement body upper surface
The heart, and corresponding with permanent magnetism body position, the through hole and puts beam groove and is evenly arranged in tunnel mistor surrounding, the sensitive measurement
Body can carry out the motion of horizontal direction and vertical direction in a groove.
Further, the micromechanical gyro application formula CLevel=R1(C1+C3+Cj) hindered to calculate gyro-level direction
Buddhist nun, using formula CVertically=R2(C2+C3+Cj) damped to calculate gyro vertical direction, wherein R1And R2For empirical coefficient, C1For spirit
Slide-film damping between quick measurement body and bottom plate, C2For the press-filming damping between sensitive measurement body and bottom plate, C3For thermoelastic damping;Cj
For press-filming damping and the Coupling Damping of slide-film damping.
Further, it is describedThe slide-film damping between sensitive measurement body and bottom plate is calculated, it is describedThe press-filming damping between sensitive measurement body and bottom plate is calculated, it is describedCalculate thermoelastic damping;
UsingCalculate the pressure between sensitive measurement body and bottom plate
Film damps the Coupling Damping with slide-film damping, and wherein S is sensitive measurement bulk area, SnFor via area, S1To put beam groove area, N
For number of openings, meetWherein K is >=1 positive integer, and the d is sensitive measurement body and permanent magnet
Spacing, the μ is the viscosity coefficient of gas, and the m is the quality of sensitive measurement body, QTFor the quality factor of thermoelastic damping,
ω is the vibration frequency of sensitive measurement body, and L is the length of sensitive measurement body;
The empirical coefficient R of the horizontal direction1Span is 2.0~2.1, the empirical coefficient R of vertical direction2Value model
Enclose for 1.0~1.12, two sides are square above and below sensitive measurement body, and area S span is 3000 μm of *
3000 μm~4000 μm * 4000 μm, the through hole is square through-hole, and via area S2Span be 75 μm * 75 μm
~100 μm * 100 μm, the beam groove of putting is rectangular rectangle, and area S1700 μm * 480 μm~1000 μm * 650 μm of span.
Further, the bonding matrix includes substrate and bed course framework, and the bed course framework is square hollow framework, institute
State and be connected on the downside of bed course framework with substrate bonding and be collectively forming square groove;Described permanent magnet is sandwich construction.
Further, the microthrust test angular speed sensitive body further comprises:
Fixed tooth electrode anode, described fixed tooth electrode anode is two, is respectively placed in the upper table of the left and right frame of pad framework
Face is simultaneously firmly bonded, and positive pole upper surface setting tooth, and is firmly bonded;
Fixed tooth Electrode Negative, described fixed tooth Electrode Negative moves the electrode of tooth for sensitive measurement body arranged on left and right sides, described fixed
Tooth Electrode Negative, in same plane, is placed in the forward and backward frame upper surface of pad framework, is firmly bonded with fixed tooth electrode anode, and
The upper surface of fixed tooth Electrode Negative sets fixed seat, and is firmly bonded;
Combination beam, described combination beam is made up of driving beam, detection beam, contiguous block, for connection fixing base and sensitive survey
Measure body.
Further, described fixed tooth electrode anode is provided with the pedestal of fixed tooth;Described fixed tooth Electrode Negative is provided with
Described fixed seat, fixed seat has former and later two, is respectively placed in two fixed tooth Electrode Negative upper surfaces, and by combination beam with
Sensitive measurement body phase is connected;The tunnel mistor of the sensitive measurement body upper surface passes through tunnel mistor lead-out wire and tunnel
Road mistor lead pad is connected;Sensitive measurement body upper surface both sides symmetric position is provided with two feedback conductors, feedback
The combined beam of wire termination is connected with the feedback conductor lead pad of fixed seat upper surface;Fixed seat and combination beam phase connection
The upper surface of position is provided with tunnel mistor lead pad and feedback conductor lead pad.
Further, described sensitive measurement body is square;The described forward and backward symmetric position of sensitive measurement body passes through respectively
Combination beam is connected with fixed seat;The beam groove of putting is arranged at the corner of sensitive measurement body, is set on the sensitive measurement body
Have and through hole is set respectively at tunnel mistor and its lead-out wire distribution.
Further, described tunnel mistor is the resistive layer with tunnel magneto-resistance effect of multi-layer film structure, institute
Stating tunnel mistor includes ferromagnetic layer, insulating barrier, the ferromagnetic layer of being arranged successively on semiconductive material substrate layer;In vacuum condition
Under, by crystal structure arrangement level, ferromagnetic layer, insulating barrier, ferromagnetic layer are grown on semiconductive material substrate layer, and formation is received
Meter level film layer, successively deposit forms tunnel mistor.
Further, the dynamic tooth of described fixed tooth and the sensitive measurement body both sides of the edge, which intersects, coincide.
Further, described combination beam is in inflection shape, and driving beam is connected with detection beam by contiguous block, in combination beamThe thickness of shape driving beam is identical with the thickness of sensitive measurement body, and the thickness of detection beam is less than both sidesShape drives beam.
Micromechanical gyro according to embodiments of the present invention, using overall construction design, structure design compact and reasonable, Ji Nengchong
Divide utilization space, and can suppress to drive the influence to detection, be adapted to decoupling certainly and miniaturization for device.Sensitive measurement body upper surface
Provided with tunnel mistor, it is right against the permanent magnet of body upper surface respective regions making, the tunnel under faint changes of magnetic field
Acute variation can occur for the resistance of road mistor, and the sensitivity of micromechanical gyro can be improved the 1-2 order of magnitude by the change.
Another feature of the design:Because permanent magnet effect herein is that stable non-uniform magnetic-field is provided for tunnel mistor, therefore,
Produced in ferromagnetic thin film in the case that magnetic field effect is not good or stability is whard to control it is contemplated that utilizing external permanent magnet pair
Ferromagnetic thin film is replaced.In addition to above feature, the measurement circuit design of the microthrust test angular speed sensitive body is simple, user
Just, good reliability, is adapted to miniaturization.Meanwhile, institute's computation formula of the present invention calculates the damping height obtained close to actual value,
Improve the degree of accuracy of micromechanical gyro.
Brief description of the drawings
Fig. 1 is the overall structure figure of micromechanical gyro of the present invention;
Fig. 2 is the matrix of micromechanical gyro of the present invention and the three-dimensional structure diagram of pad framework assembly
Fig. 3 is the integrally-built front view of the embodiment of the present invention;
Fig. 4 is the microthrust test angular speed sensitive body three-dimensional structure diagram of the embodiment of the present invention;
Fig. 5 is the front view of the sensitive measurement body of the embodiment of the present invention;
Fig. 6 is the matrix of the embodiment of the present invention and the plane structure chart of pad framework assembly;
Fig. 7 is the combination beam three-dimensional structure diagram of the embodiment of the present invention;
Fig. 8 is the three-view diagram of the combination beam of the embodiment of the present invention;
Fig. 9 is the fixed broach structural perspective of the embodiment of the present invention;
Figure 10 is the tunnel mistor basic block diagram of the embodiment of the present invention;
Shown in figure, list of numerals is as follows:
1st, substrate, 2, pad framework, 3, sensitive measurement body, 4, permanent magnet, 5, driving beam, 6, detection beam, 7, contiguous block, 8,
Fixed tooth, 9, microthrust test angular speed sensitive body, 21, square groove, 30, tunnel mistor, 31, through hole, 32, supporter, 33, fixed
Tooth supporter, 34, lead-out wire, 35, feedback conductor, 36, broach, 37, dynamic tooth, 38, combination beam, 39, fixed tooth electrode anode, 310,
Fixed tooth Electrode Negative, 311, tunnel mistor lead pad, 312, feedback conductor lead pad, 313, put beam groove, 314, dynamic
Tooth space, 41, substrate layer, the 42, first ferromagnetic layer, 43, insulating barrier, the 44, second ferromagnetic layer.
Embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
The embodiment of figure description is exemplary, is only used for explaining the present invention, and is not considered as limiting the invention.
In the description of the invention, it is to be understood that term " " center ", " on ", " under ", "front", "rear", " left side ",
The orientation or position relationship of instructions such as " right sides " are, based on orientation shown in the drawings or position relationship, to be for only for ease of and describe this hair
Bright and simplified description, rather than instruction or the signified device of hint or element must be with specific orientation, with specific orientation
Construction and operation, therefore be not considered as limiting the invention.
In the description of the invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " connected ", " company
Connect " it should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or it is integrally connected;It can be machine
Tool is connected or electrically connected;Can be joined directly together, can also be indirectly connected to by intermediary, can be two members
Connection inside part.For the ordinary skill in the art, above-mentioned term can be understood in the present invention with concrete condition
Concrete meaning.
Below in conjunction with accompanying drawing, the present invention will be further described:
As shown in Figure 1-2, micromechanical gyro according to an embodiment of the invention, including:Substrate 1, pad framework 2, permanent magnetism
Body 4 and microthrust test angular speed sensitive body.
Specifically, can be carrier with substrate 1, for example substrate 1 can be made up of semi-conducting material, the centre bit of substrate 1
Install to provide the permanent magnet 4 of non-uniform magnetic-field;And substrate 1 is provided with square hollow pad framework 2, the pad framework
2 with substrate 1 be collectively forming can for sensitive measurement body 3 provide space square groove 21, then again in this groove make
Permanent magnet 4.
Microthrust test angular speed sensitive body can be located on pad framework 2 and is firmly bonded with pad framework 2, and microthrust test
Angular speed sensitive body includes being correspondingly arranged at the sensitive measurement body 3 of the top of square groove 21.The upper surface of sensitive measurement body 3 is provided with tunnel
Mistor 6 is as sensing unit, and tunnel mistor 6 is corresponding with the position of permanent magnet 4.Tunnel mistor 6 can be with sensitive
Body 3 is measured along the direction vibration perpendicular to the upper surface of permanent magnet 4.
Micromechanical gyro according to embodiments of the present invention, using overall construction design, reasonable in design is compact, Ji Nengchong
Divide utilization space, and can suppress to drive the influence to detection, be adapted to decoupling certainly and miniaturization for device.The upper table of sensitive measurement body 3
Face, which makes, tunnel mistor 6, and it is right against the permanent magnet 4 of the upper surface of substrate 1, the tunnel magnetosensitive under faint changes of magnetic field
Acute variation can occur for the resistance of resistance 6, and the sensitivity of micromechanical gyro can be improved the 1-2 order of magnitude, this device by the change
Measurement circuit design is simple, easy to use, good reliability, be adapted to miniaturization.
As shown in figure 3, microthrust test angular speed sensitive body includes:Sensitive measurement body 3, supporter 32, fixed tooth 5, tunnel magnetosensitive
Resistance 6, tunnel mistor lead-out wire 34, tunnel mistor lead pad 311, dynamic tooth 9, feedback conductor 35, feedback conductor
Lead pad 312, fixed tooth electrode negative 310, fixed tooth motor positive pole 39, combination beam 38.
Specifically, fixed tooth motor positive pole 39 can be respectively provided at the arranged on left and right sides frame upper surface of pad framework 2 for two
On, and be firmly bonded, and two upper surfaces of fixed tooth motor positive pole 39 are respectively equipped with fixed tooth 5, and be firmly bonded;Fixed tooth motor
Negative pole 310 is the electrode of the arranged on left and right sides driving comb of sensitive measurement body 3, can be former and later two, be respectively provided at pad framework 2
On forward and backward frame upper surface, and it is firmly bonded, and the upper surface of fixed tooth electrode negative 310 is respectively equipped with supporter 32, and glue
Knot is firm;Sensitive measurement body 3 can be connected by combination beam 38 with fixed seat;Tunnel mistor 6 is two, can be set
Centre position in the upper surface of sensitive measurement body 3, and tunnel mistor 6 is inShape, the identical cross-distribution of the two structure,
And the overall permanent magnet 4 for being right against the making of the upper surface of substrate 1;Tunnel mistor lead-out wire 34 draws tunnel mistor 6,
End is connected via inflection shape combination beam 38 with the tunnel mistor lead pad 311 of the upper surface of supporter 32;Feedback is led
Line 35 is symmetrically distributed in the upper surface of sensitive measurement body 3, and end is via combination beam 38 and the feedback conductor of the upper surface of supporter 32
Lead pad 312 is connected;Dynamic tooth 37 is uniformly distributed in the arranged on left and right sides edge of sensitive measurement body 3, and intersects kiss with fixed tooth 5
Close.
As Figure 4-Figure 6, sensitive measurement body 3 is square, and the corner of inner side four of supporter 32 is connected to by combination beam 38
Position, is just embedded in pad framework 2 and the middle position of the assembly square groove 21 of the formation of substrate 1.Sensitive measurement body 3 can be with
With semi-conducting material manufacturing, under the support of combination beam 38, sensitive measurement body 3 can be in pad framework 2 and the combination of the formation of substrate 1
Along the free vibration of front, back, left, right, up, down direction in body square groove 21.
The substrate and the assembly of pad framework include:Pad framework 2, substrate 1, permanent magnet 4.Pad framework 2 is side
Shape framework, front and rear frame is identical with comb electrodes negative pole and fixed seat width, and the thickness of pad framework 2 regards microthrust test angular speed
The detection range and damped coefficient of sensitive body determine that the centre position of substrate 1 and tunnel mistor 6 on sensitive measurement body 3 are just right
Place is provided with permanent magnet 4, and the shape and area of permanent magnet 4 are according to power and distribution needs of the tunnel mistor 6 to magnetic field intensity
Depending on situation.
As Figure 7-8, combination beam 38 includes:Drive beam 5, detection beam 6, contiguous block 7.The end of combination beam 38 is contiguous block
7, driving beam 5 is symmetrically arranged with the left and right portion of contiguous block 7, is detection beam 6 between two driving beams 5, detection beam 6 end is in succession
Block 7 is connect, three is structure as a whole.Drive beam 5 identical with the thickness of contiguous block 7, the thickness of detection beam 6 is less than driving beam 5 and connection
Block 7, contiguous block 7, drive beam 5 thickness it is identical with the thickness of sensitive measurement body 3.Ensure detection beam 6 in the Z-axis direction it is total just
Degree also far smaller than driving beam 5 global stiffness in the Z-axis direction, it is possible to achieve microthrust test angular speed sensitive body driving direction,
Decoupling certainly i.e. in X-direction and detection direction, i.e. Z-direction.It is preferred that, described combination beam is in inflection shape, driving beam and
Detection beam is connected by contiguous block, in combination beamThe thickness of shape driving beam is identical with the thickness of sensitive measurement body, inspection
The thickness for surveying beam is less than both sidesShape drives beam.
As shown in figure 9, fixed tooth 8 includes:Fixed tooth supporter 33, broach 36, dynamic tooth space 314, fixed tooth supporter 33
It is bonded on fixed tooth motor positive pole 39, the side spaced set broach 36 of fixed tooth 8, tooth space is between broach 36
314, broach 36, dynamic tooth space 314 and the cross correlation of dynamic tooth 37 on sensitive measurement body 3, fixed tooth 8 and sensitive measurement body
Thickness is identical.
As shown in Figure 10, tunnel mistor 30 is included in the semiconductive material substrate 41 (upper table of sensitive measurement body 3 of layer
Face) on arrange successively the first ferromagnetic layer 42, insulating barrier 43, the second ferromagnetic layer 44.It should be noted that above-mentioned tunnel magnetosensitive electricity
Resistance 30 is designed and produced using molecular beam epitaxy technique, and molecular beam epitaxy is that one kind grows high-quality crystal on the semiconductor wafer
The technology of film, under vacuum, by crystal structure arrangement being grown on semiconductive material substrate layer 41 in layer, and
Nano thick film is formed, is successively deposited, it is necessary to the quality of film forming, thickness strictly be controlled, to avoid film forming in deposition process
The accuracy of detection and sensitivity of quality and thickness effect micromechanical gyro.
In addition, can be sandwich construction according to the permanent magnet 4 of the present invention.Thus, it is possible to preferably with tunnel mistor
30 use cooperatively, the multilayer ferromagnetic material nanometer film production that the upper surface that the permanent magnet 4 can be included in substrate 1 is arranged successively
Form.It should be noted that above-mentioned permanent magnet 4 can be using what is designed and produced by molecular beam epitaxy, molecular beam epitaxy is
One kind grows high-quality crystal film on the semiconductor wafer, under vacuum, by crystal structure arrangement layer by layer
Growth on substrate 1, and forms nano thick film, successively deposits, in deposition process, it is necessary to strictly the quality of control film forming,
Thickness, to avoid the quality of film forming and accuracy of detection and the sensitivity of thickness effect micromechanical gyro.Further, since permanent magnetism herein
The effect of body 4 is that stable non-uniform magnetic-field is provided for tunnel mistor 30, therefore, and it is not good to produce magnetic field effect in permanent magnet 4
Or it is contemplated that being replaced using external permanent magnet to permanent magnet 4 in the case that stability is whard to control.
Sensitive measurement body 3 does linear simple harmonic vibration, when gyroscope is in Y under the activation force of dynamic tooth 37 along X-direction
When having turning rate input on direction of principal axis, due to the effect of coriolis force, sensitive measurement body 3 will produce precession in the Z-axis direction.Because between
Away from changing, the magnetic field produced by the permanent magnet 4 of the upper surface of substrate 1 position of tunnel mistor 30 on sensitive measurement body 3
The intensity at place can increase or reduce.The change of magnetic field intensity causes tunnel magneto-resistance effect to occur the resistance of tunnel mistor 30
Violent change.Thus a faint Ge Shi force signal can be converted into a stronger electrical signal, by the letter
Number processing can just detect the size of Y direction input angular velocity.
In the present invention, the through hole is the square through-hole that the length of side is a, and the upper and lower two sides of the sensitive measurement body are
Length of side L square, the thickness of through hole and the sensitive measurement body is H;
Include the damping in horizontal direction and vertical direction, therefore the present invention in view of damping to ask by both direction
Solution, the micromechanical gyro application formula CLevel=R1(C1+C3+Cj) damped to calculate gyro-level direction, using formula CVertically=
R2(C2+C3+Cj) damped to calculate gyro vertical direction, wherein R1And R2For empirical coefficient, C1For between sensitive measurement body and bottom plate
Slide-film damping, C2For the press-filming damping between sensitive measurement body and bottom plate, C3For thermoelastic damping;CjFor press-filming damping and synovial membrane
The Coupling Damping of damping.The Coupling Damping by press-filming damping and slide-film damping combination is proposed in the present invention first so that calculating is obtained
It must be worth and be more nearly actual numerical value, improve degree of accuracy when micromechanical gyro is applied.
It is describedThe slide-film damping between sensitive measurement body and bottom plate is calculated, it is described
The press-filming damping between sensitive measurement body and bottom plate is calculated, it is describedCalculate thermoelastic damping;
UsingCalculate the pressure between sensitive measurement body and bottom plate
Film damps the Coupling Damping with slide-film damping, and wherein S is sensitive measurement bulk area, SnFor via area, S1To put beam groove area, N
For number of openings, meetWherein K is >=1 positive integer, and the d is sensitive measurement body and permanent magnet
Spacing, the μ is the quality that m described in the viscosity coefficient of gas is sensitive measurement body, QTFor the quality factor of thermoelastic damping, ω
For the vibration frequency of sensitive measurement body, L is the length of sensitive measurement body;
The empirical coefficient R of the horizontal direction1Span is 2.0~2.1, the empirical coefficient R of vertical direction2Value model
Enclose for 1.0~1.12, two sides are square above and below sensitive measurement body, and area S span is 3000 μm of *
3000 μm~4000 μm * 4000 μm, the through hole is square through-hole, and via area SnSpan be 75 μm * 75 μm
~100 μm * 100 μm, the beam groove of putting is rectangular rectangle, and area S1700 μm * 480 μm~1000 μm * 650 μm of span.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " illustrative examples ",
The description of " example ", " specific example " or " some examples " etc. means to combine specific features, the knot that the embodiment or example are described
Structure, material or feature are contained at least one embodiment of the present invention or example.In this manual, to above-mentioned term
Schematic representation is not necessarily referring to identical embodiment or example.Moreover, specific features, structure, material or the spy of description
Point can in an appropriate manner be combined in any one or more embodiments or example.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that not
In the case of departing from the principle and objective of the present invention a variety of change, modification, replacement and modification can be carried out to these embodiments, this
The scope of invention is limited by claim and its equivalent.