CN111624525B - Integrated three-axis magnetic sensor for suppressing magnetic noise by utilizing magnetic stress regulation and control - Google Patents
Integrated three-axis magnetic sensor for suppressing magnetic noise by utilizing magnetic stress regulation and control Download PDFInfo
- Publication number
- CN111624525B CN111624525B CN202010456328.XA CN202010456328A CN111624525B CN 111624525 B CN111624525 B CN 111624525B CN 202010456328 A CN202010456328 A CN 202010456328A CN 111624525 B CN111624525 B CN 111624525B
- Authority
- CN
- China
- Prior art keywords
- magnetic
- central
- axis
- unit
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/0206—Three-component magnetometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
Abstract
The invention discloses an integrated three-axis magnetic sensor for suppressing magnetic noise by utilizing magnetic stress regulation, which comprises an insulating substrate, a magnetic flux electric regulation and control unit, an orbit-changing soft magnetic block and at least four magnetic measurement units, wherein the insulating substrate is provided with a magnetic flux electric regulation and control unit; the magnetic measurement unit is arranged on the surface of the insulating substrate in a central symmetry mode, the magnetic flux electric control unit is placed on the insulating substrate with the symmetric central point of the magnetic measurement unit as the center, and the track-changing soft magnetic block is placed on the magnetic measurement unit with the symmetric central point of the magnetic measurement unit as the center. The invention has the advantages of high resolution, high orthogonality, small volume, low power consumption and the like.
Description
Technical Field
The invention relates to the technical field of magnetoelectric coupling and magnetic sensors, in particular to an integrated triaxial magnetic sensor for suppressing magnetic noise by utilizing magnetic stress regulation and control.
Background
The high-performance three-axis magnetic sensor can directly measure three-component information of a magnetic field, and is widely applied to key technical fields of national security, such as target detection, geomagnetic navigation, space environment monitoring and the like. With the continuous improvement of the requirements of weak magnetic field detection capability, detection system volume and the like, the high-performance three-axis magnetic sensor technology has the development trend of high resolution, high sensitivity, miniaturization and low power consumption.
The three-axis magnetic sensor may be divided into an assembled three-axis magnetic sensor and an integrated three-axis magnetic sensor according to an implementation manner. The assembled three-axis magnetic sensor mainly has two types of three single-axis magnetic sensor combinations and one single-axis magnetic sensor and one double-axis magnetic sensor combination, but no matter which combination type, the three-axis orthogonality of the assembled three-axis magnetic sensor depends on the assembly precision, so that the three-axis orthogonality is difficult to promote. The integrated three-axis magnetic sensor has better orthogonality. In recent years, researchers have proposed various integrated three-axis magnetic sensor solutions: 1. the three-axis magnetic sensor based on the Hall effect is manufactured by adopting a CMOS (complementary metal oxide semiconductor) process, so that the orthogonality among three axes can be ensured, but the resolution is low and is only about 21 mu T; 2. the three-axis magnetic field measurement is realized by utilizing the capacitance change caused by the displacement generated by the Lorentz force, the orthogonality, the miniaturization and the low power consumption can be ensured, but the resolution is not high, and the Z-direction magnetic field resolution is about 70 nT; 3. the magneto-resistance sensor for measuring X, Y magnetic field is manufactured on the plane of a substrate, the magneto-resistance sensor for measuring Z magnetic field is manufactured on the inclined plane of the substrate, and the integrated manufacturing is realized (patent numbers are US7564237 and US7126330), but the magneto-resistance sensor on the inclined plane is difficult to manufacture, and the consistency with the magneto-resistance sensor in the plane is difficult to ensure; 4. the NiFe plate is utilized to distort the Z-direction magnetic field component to a plane for measurement, so that three-component measurement of the magnetic field is realized, but the distorted magnetic field component is small, and the Z-direction magnetic field resolution is low.
From the above analysis, the integrated three-axis magnetic sensor has better orthogonality compared with the assembled three-axis magnetic sensor, but the difficulty in manufacturing the integrated three-axis magnetic sensor is the measurement of the Z-direction magnetic field. The integrated triaxial magnetic sensor based on the Hall effect and the Lorentz force has lower resolution, and the magneto-resistor element can realize higher sensitivity and resolution, so that the requirements of high resolution, high sensitivity, miniaturization and low power consumption of the high-performance triaxial magnetic sensor can be met more hopefully. But the magneto-resistance element can only sense the in-plane magnetic field, and the realization of the Z-direction magnetic field measurement by the magneto-resistance element is mainly realized by two modes of manufacturing the magneto-resistance sensor on the inclined plane of the substrate and converting the Z-direction magnetic field into the plane measurement by using soft magnetic materials, but the magneto-resistance sensor is difficult to ensure the consistency of the sensor on the inclined plane and the plane sensor, and the magneto-resistance element has low steering efficiency of magnetic lines of force and limited promotion of the three-axis orthogonality.
Therefore, although the magnetoresistance element has become an important development trend of an integrated three-axis magnetic sensor by virtue of higher sensitivity and resolution, the problem of measuring the Z-direction magnetic field still needs to be solved. In addition to this, the magnetoresistive element also has a large 1/f noise. At present, the method for suppressing 1/f noise of a magneto-resistance device is mainly to modulate a low-frequency magnetic field signal to be detected into a high-frequency magnetic field signal, and then filter the 1/f noise of the obtained high-frequency magnetic field signal through a high-pass filter: 1. weizhong Wang et al modulate the measured magnetic field by using the characteristic that the ferromagnetic material periodically changes between a ferromagnetic phase and a paramagnetic phase when the temperature of the ferromagnetic material periodically changes near the curie temperature, but have many problems of thermal stability, drift and the like, and are difficult to put into application; 2. A.Jander et al of NVE company utilizes a coil to apply an external magnetic field to periodically saturate a magnetic line concentrator to perform chopping modulation, but the external magnetic field applied by the coil introduces extra noise, and the noise is increased; 3. a.guarde et al of portuguese incesc adopts piezoelectric to drive a cantilever beam deposited with a soft magnetic material, so that the cantilever beam vibrates up and down right above a magneto-resistance sensitive unit to modulate a magnetic field, but because a micro-mechanical vibration mode is adopted, high vibration frequency and large amplitude are difficult to be considered simultaneously, and the modulation efficiency is low.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide an integrated three-axis magnetic sensor which has high resolution and high orthogonality and inhibits magnetic noise by utilizing magnetic stress regulation.
In order to solve the technical problems, the invention adopts the following technical scheme:
an integrated three-axis magnetic sensor for suppressing magnetic noise by utilizing magnetic stress regulation comprises an insulating substrate, a magnetic flux electric regulation unit, a track-changing soft magnetic block and at least four magnetic measurement units;
the magnetic measurement unit is arranged on the surface of the insulating substrate in a central symmetry manner, the magnetic electrification regulating and controlling unit is placed on the insulating substrate by taking the symmetric central point of the magnetic measurement unit as the center, and the track-changing soft magnetic block is placed on the magnetic measurement unit by taking the symmetric central point of the magnetic measurement unit as the center;
each magnetic measurement unit comprises a magnetic line concentrator, a compensation coil and a magnetic sensitive unit, wherein the compensation coil is wound on the magnetic line concentrator, the magnetic line concentrator comprises two concentrator units which are arranged at intervals, and two sensitive magnetic resistors of the magnetic sensitive unit are positioned in a central gap between the two concentrator units;
the magnetic flux electric control unit comprises a piezoelectric driving layer, a resonance structure and a soft magnetic film, wherein the resonance structure comprises a clamped beam and an anchor point for supporting the clamped beam, the anchor point is supported and fixed on an insulating substrate, the piezoelectric driving layer is located on the upper surface of the clamped beam, and the soft magnetic film is located on the lower surface of the clamped beam and located above a central gap.
As a further improvement to the above technical solution:
the insulating substrate is a silicon substrate with an insulating layer deposited on the surface.
The magnetic sensing unit comprises two reference magneto resistors, the reference magneto resistors are arranged below the collector unit and close to one side of the central gap, and the two sensing magneto resistors and the two reference magneto resistors form a Wheatstone bridge.
The central line of the central gap of the magnetic line concentrator forms 45 degrees with the central axis of the magnetic line concentrator, the directions of the two sensitive magneto-resistance magnetic fluxes are vertical to the central line of the central gap, and the direction of the reference magneto-resistance magnetic flux is parallel to the central axis of the magnetic line concentrator.
The central lines of the central gaps of the two magnetic line collectors which are symmetrically arranged with each other about the symmetric central point are arranged in parallel.
The piezoelectric driving layer is sequentially provided with a top electrode, a piezoelectric substrate and a bottom electrode from bottom to top.
The track-changing soft magnetic block comprises a soft magnetic block main body and a soft magnetic block supporting part, the soft magnetic block main body is arranged on the magnetic measuring unit in a crossing mode through the soft magnetic block supporting part, and the soft magnetic block supporting part is located above the collector unit close to the symmetric central point.
The sensitive magneto-resistance and the reference magneto-resistance of the magnetic sensitive unit are prepared by GMR or TMR.
The compensation coil is an annular coil structure formed by surrounding a top layer coil and a bottom layer coil which are respectively distributed on the upper surface and the lower surface of the magnetic line concentrator.
The soft magnetic film is prepared by FeSiBPC or FeGaB.
The magnetic force line collector is prepared by growing a high magnetic conductive film on an insulating substrate, and preferably, the magnetic force line collector is made of iron-cobalt alloy or nickel-iron alloy.
The resonant structure is fixed on the insulating substrate through anchor point supports.
The soft magnetic film directly grows on the lower surface of the resonant structure in a magnetron sputtering mode.
The top electrode of the piezoelectric driving layer is a metal layer, and preferably, the metal layer is made of one or more of Cr, Mo and Au.
The piezoelectric substrate of the piezoelectric driving layer is made of a piezoelectric material, and preferably, the piezoelectric material is AlN.
The bottom electrode of the piezoelectric driving layer is a metal layer directly grown on the resonant structure, and preferably, the metal layer is made of one or more of Cr and Mo.
Compared with the prior art, the invention has the advantages that:
1. the integrated triaxial magnetic sensor for suppressing the magnetic noise by utilizing the magnetic stress regulation and control changes the structural strain by utilizing the resonance of the piezoelectric driving layer and the resonant structure, thereby changing the magnetic conductivity of the soft magnetic film, suppressing the low-frequency 1/f noise by utilizing the stress regulation and control of the soft magnetic film, realizing the regulation and control of the magnetic field of a sensitive body at the inhabitation position of a magnetic force line collector, not needing large amplitude and greatly reducing the process difficulty. The three-axis magnetic sensor can simultaneously realize large strain and high vibration frequency, improve modulation efficiency and greatly improve resolution of the three-axis magnetic sensor. And the resonance structure utilizes the characteristic of low mechanical damping of silicon, reduces the hysteresis characteristic and the required driving voltage, improves the integral quality factor and has better realizability.
2. The integrated three-axis magnetic sensor for restraining magnetic noise by utilizing magnetic stress regulation adopts the track-changing soft magnetic block and the magnetic measurement units to steer a Z-direction magnetic field to a plane and measures the Z-direction magnetic field through the four magnetic measurement units, so that high-efficiency track changing of the Z-direction magnetic field is realized, gathering amplification and planarization measurement of the three-axis magnetic field are completed, high-resolution measurement of weak three-axis magnetic field signals is realized, in-plane high-orthogonality measurement can be realized by converting track changing of the Z-direction magnetic field to plane measurement, and the Z-direction magnetic field is obtained by resolving, so that three-axis high orthogonality is realized, and the integrated three-axis high-orthogonality magnetic sensor has high orthogonality and integration degree.
3. The integrated three-axis magnetic sensor for restraining the magnetic noise by utilizing the magnetic stress regulation has the advantages of high resolution, high orthogonality, small volume, low power consumption and the like.
Drawings
Fig. 1 is a schematic front view of an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a front view that does not include the track-changing soft magnetic block according to the embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a front view that does not include the track-changing soft magnetic block and the piezoelectric driving layer in the embodiment of the present invention.
FIG. 4 is a schematic front view of the magnetic measuring unit and the track-changing soft magnetic block according to the embodiment of the present invention.
FIG. 5 is a schematic sectional view A-A of FIG. 1.
FIG. 6 is a schematic sectional view of the structure of FIG. 2B-B.
FIG. 7 is a schematic cross-sectional view of C-C of FIG. 4.
FIG. 8 is a schematic structural diagram of a magnetic measurement unit according to an embodiment of the present invention.
Fig. 9 is a schematic diagram of the magnetic field modulation principle of the embodiment of the present invention.
Illustration of the drawings: 1. an insulating substrate; 2. a magnetic measurement unit; 21. a magnetic force line collector; 211. a center gap; 212. a collector unit; 22. a compensation coil; 221. a top layer coil; 222. a bottom layer coil; 23. a magnetically sensitive unit; 231. sensitive magneto-resistance; 232. a reference magnetoresistance; 3. a magnetic flux electric control unit; 31. a piezoelectric drive layer; 311. a top electrode; 312. a piezoelectric substrate; 313. a bottom electrode; 32. a resonant structure; 321. an anchor point; 322. fixedly supporting the beam; 33. a soft magnetic thin film; 4. a track-changing soft magnetic block; 41. a soft magnetic block body; 42. a soft magnetic block support.
Detailed Description
The invention will be described in further detail below with reference to the drawings and specific examples. Unless otherwise specified, the instruments or materials employed in the present invention are commercially available.
As shown in fig. 1-8, the integrated three-axis magnetic sensor for suppressing magnetic noise by using magnetic stress regulation comprises an insulating substrate 1, a magnetic flux electric regulation unit 3, a track-changing soft magnetic block 4 and at least four magnetic measurement units 2; the magnetic measurement units 2 are arranged on the surface of the insulating substrate 1 in a central symmetry manner, the magnetic flux electric control unit 3 is placed on the insulating substrate 1 by taking the symmetric central point of the magnetic measurement unit 2 as the center, and the track-changing soft magnetic block 4 is placed on the magnetic measurement unit 2 by taking the symmetric central point of the magnetic measurement unit 2 as the center; each magnetic measurement unit 2 comprises a magnetic line concentrator 21, a compensation coil 22 and a magnetic sensitive unit 23, the compensation coil 22 is wound on the magnetic line concentrator 21, the magnetic line concentrator 21 comprises two concentrator units 212 arranged at intervals, and two sensitive magneto resistors 231 of the magnetic sensitive unit 23 are positioned in a central gap 211 between the two concentrator units 212; the magnetic electrification regulating and controlling unit 3 comprises a piezoelectric driving layer 31, a resonance structure 32 and a soft magnetic thin film 33, wherein the resonance structure 32 comprises a clamped beam 322 and an anchor point 321 for supporting the clamped beam 322, the anchor point 321 is supported and fixed on the insulating substrate 1, the piezoelectric driving layer 31 is positioned on the upper surface of the clamped beam 322, and the soft magnetic thin film 33 is positioned on the lower surface of the clamped beam 322 and above the central gap 211.
The insulating substrate 1 is a silicon substrate with an insulating layer deposited on the surface.
The magneto-sensitive unit 23 comprises two reference magneto resistors 232, the reference magneto resistor 232 is located below the concentrator unit 212 and is disposed near one side of the central gap 211, and the two sensitive magneto resistors 231 and the two reference magneto resistors 232 form a wheatstone bridge.
The central line of the central gap 211 of the magnetic line concentrator 21 is 45 degrees with the central axis of the magnetic line concentrator 21, the magnetic flux directions of the two sensitive magnetoresistors 231 are perpendicular to the central line of the central gap 211, and the magnetic flux direction of the reference magnetoresistor 232 is parallel to the central axis of the magnetic line concentrator 21.
The center lines of the center gaps 211 of the two magnetic flux concentrators 21, which are symmetrical to each other about the center point of symmetry, are arranged in parallel. In this embodiment, the center lines of the central gaps 211 of two magnetic line concentrators 21 that are symmetrical to each other about the center point of symmetry are perpendicular to the center lines of the central gaps 211 of two other magnetic line concentrators 21 that are symmetrical to each other about the center point of symmetry.
The piezoelectric driving layer 31 is provided with a top electrode 311, a piezoelectric substrate 312, and a bottom electrode 313 in this order from the bottom up.
The track-changing soft magnetic block 4 comprises a soft magnetic block main body 41 and a soft magnetic block supporting part 42, the soft magnetic block main body 41 is arranged across the magnetic measuring unit 2 through the soft magnetic block supporting part 42, and the soft magnetic block supporting part 42 is positioned above the collector unit 212 close to the symmetric central point.
The sensitive magnetoresistance 231 and the reference magnetoresistance 232 of the magnetic sensitive unit 23 are fabricated using GMR or TMR.
The compensation coil 22 is a ring-shaped coil structure formed by surrounding a top coil 221 and a bottom coil 222 respectively distributed on the upper surface and the lower surface of the magnetic line concentrator 21.
The soft magnetic film 33 is prepared by using FeSiBPC or FeGaB.
As shown in fig. 1 and 5, the integrated three-axis magnetic sensor for regulating magnetic noise by stress of this embodiment includes an insulating substrate 1, four magnetic measurement units 2 (magnetic measurement unit 2#1 to magnetic measurement unit 2#4), a magnetic flux electric regulation unit 3, and a track-changing soft magnetic block 4, where the four magnetic measurement units 2 (magnetic measurement unit 2#1 to magnetic measurement unit 2#4) are arranged on the surface of the insulating substrate 1 in a central symmetry manner, the magnetic flux electric regulation unit 3 is placed on the insulating substrate 1 with the symmetric center points of the four magnetic measurement units 2 as the center, the track-changing soft magnetic block 4 is placed on the four magnetic measurement units 2 right below the track-changing soft magnetic measurement units 2, magnetic permeability of a soft magnetic film 33 is changed by resonance to realize magnetic flux regulation, and high efficiency track changing of a Z-directional magnetic field is realized by the track-changing soft magnetic block 4 and the four magnetic measurement units 2 with central symmetry, the method has the advantages of realizing the aggregation amplification and the planarization measurement of the triaxial magnetic field, effectively inhibiting low-frequency 1/f noise, improving the positive angle and the resolution of the triaxial magnetic field, enhancing the stability and improving the Q value.
In this embodiment, the insulating substrate 1 is intrinsic silicon with an insulating layer deposited on the surface by a vapor phase chemical reaction.
As shown in fig. 4, 7, and 8, the magnetic measurement unit 2 includes a magnetic line concentrator 21, a compensation coil 22, and a magnetic sensing unit 23, the center of the magnetic line concentrator 21 is provided with a central gap 211, the compensation coil 22 is wound on the magnetic line concentrator 21 and distributed on two sides of the central gap 211, the magnetic field in the central gap 211 is amplified under the action of the magnetic line concentrator 21, the magnetic sensing unit 23 forms a wheatstone bridge by two sensitive magnetoresistors 231 and two reference magnetoresistors 232, the two sensitive magnetoresistors 231 are located in the central gap 211 and placed on the insulating substrate 1, and the resistance value of the magnetic field signal in the central gap 211 is changed to R0+ Δ R; two reference magnetoresistors 232 are arranged below the magnetic force line collector 21, and are insensitive to magnetic field and have resistance value R0No change occurs; the two sensitive magnetoresistors 231 and the two reference magnetoresistors 232 form a half-bridge sensitive wheatstone bridge. At a supply voltage VcBy the output V of the wheatstone bridge of the single magneto-sensitive element 23oComprises the following steps:
in the formula (1), VoRepresenting the output, R, of a single magnetically sensitive cell 230Representing the resistance value, R, of the reference magnetoresistance 2320+ Δ R represents the resistance of the sensitive magnetoresistive 231, Δ R is the sense resistance of the sensitive magnetoresistive 231, VcRepresenting the supply voltage of a single magnetically susceptible unit 2。
In this embodiment, the magnetic line concentrator 21 is made by growing a high magnetic conductive film on the insulating substrate 1, and the preferred material is an iron-cobalt alloy or a nickel-iron alloy, and can be prepared by methods such as electroplating and magnetron sputtering.
In this embodiment, the central gap 211 of the magnetic force line collector 21 and the central axis of the magnetic force line collector 21 are arranged at an angle of 45 °, and the directions of the central gaps 211 of the four magnetic measurement units 2 are the same, so that the sensitive directions of the sensitive magneto-resistors 231 of the four magnetic sensitive units 23 are the same and are the directions with the largest magnetic fluxes, thereby eliminating the mutual influence between the sensitive magneto-resistors 231 and improving the sensitivity of the sensitive magneto-resistors 231.
In this embodiment, the sensitive magnetoresistance 231 and the reference magnetoresistance 232 of the magnetic sensing unit 23 are both TMRs.
In this embodiment, the compensation coil 22 is formed by a top layer coil 221 distributed on the upper surface of the magnetic flux collector 21 and a bottom layer coil 222 distributed on the lower surface of the magnetic flux collector 21 to form a ring-shaped coil structure.
As shown in fig. 2, 3 and 6, the magnetic flux electronic control unit 3 includes a piezoelectric driving layer 31, a resonant structure 32 and a soft magnetic thin film 33, wherein the piezoelectric driving layer 31 includes a top electrode 311, a piezoelectric substrate 312 and a bottom electrode 313 to form a driving electrode. The piezoelectric driving layer 31 directly grows on the resonance structure 32, the piezoelectric substrate 312 is made of aluminum nitride AlN, the bottom electrode 313 is made of molybdenum, and is beneficial to the c-axis preferred orientation growth of AlN, and the top electrode 311 is made of gold. In this embodiment, the piezoelectric driving layer 31 may be prepared by magnetron sputtering. The resonant structure 32 is made of silicon, so that the mechanical quality factor of the magnetic conduction regulation unit 3 is greatly improved.
As shown in fig. 3, the resonant structure 32 adopts a double W-shaped structure, and can achieve higher strain at the same quality factor compared with the conventional rectangular beam (square frame structure), the central beam is connected to the anchor point 321 through four extending beams (4 connected to the anchor point 321 at an angle of 45 degrees are extending beams, and the part connected to the extending beams is the central beam (funnel-shaped part)), and the strain of the resonant structure 32 at the position of the soft magnetic thin film 33 can be greatly increased.
As shown in fig. 3, the resonant structure 32 is supported and fixed on the insulating substrate 1 through an anchor point 321 for connecting the magnetic energization regulating unit 3 and the insulating substrate 1. In this embodiment, the anchor point 321 is fixed by metal bonding, preferably by gold-indium bonding.
In this embodiment, the soft magnetic thin film 33 is a high magnetostriction coefficient and high magnetic permeability film, the high magnetostriction coefficient is favorable for improving the regulation and control capability of the soft magnetic thin film 33, and the high magnetic permeability is favorable for modulating the gap magnetic field, and is preferably made of a nickel-iron alloy or an iron-cobalt alloy, and can be prepared by a magnetron sputtering method.
In this embodiment, the working principle of the magnetic flux electric control unit 3 is as follows:
an ac voltage signal V ═ V is applied to the piezoelectric driving layer 31 via the top electrode 311 and the bottom electrode 313 of the piezoelectric driving layer 31Esin(2πfEt), an alternating driving electric field E ═ E is generated in the piezoelectric substrate 312Esin(2πfEt), a periodic strain epsilon is generated in the stress axis direction due to the inverse piezoelectric effect of the piezoelectric substrate 312Esin(2πfEt), the transfer of the periodic strain of the piezoelectric substrate 312 to the resonant structure 32 causes the resonant structure 32 to operate in a resonant state and generates a periodic strain ∈ ═ ″.Esin(2πfEt), the periodic strain of the resonant structure 32 is transferred to the soft magnetic thin film 33 and generates a periodic stress σ ═ Y ∈ 'on the soft magnetic thin film 33'Esin(2πfEt), Y is the young's modulus of the soft magnetic thin film 33, so that the magnetic permeability of the soft magnetic thin film 33 changes periodically, and further the magnetic path formed by the soft magnetic thin film 33, the magnetic line concentrator 21 and the central gap 211 changes periodically, and the low-frequency measured magnetic field in the central gap 211 is modulated into a high-frequency magnetic field. The magnetic measurement unit 2 outputs a high-frequency magnetic field signal mixed with low-frequency noise, and the low-frequency noise is filtered by a high-pass filter, so that a measured magnetic field signal with low-frequency 1/f noise suppression can be obtained.
As shown in fig. 9, the principle that the low-frequency measured magnetic field in the central gap 211 is modulated into a high-frequency magnetic field is as follows:
the magnetic flux is collected by the magnetic flux collector 21, and passes through the magnetic flux collector 21 toward the other end from the soft magnetic thin film 33 and the central gap 211, respectively. The change in permeability of the soft magnetic film 33 does not affect the magnetic flux passing through the magnetic flux concentrator 21, but affects the magnetic flux passing through the soft magnetic film 33 and the central gap 211. As shown in fig. 9(a), when the permeability of the soft magnetic thin film 33 is large, the magnetic flux flows mainly through the soft magnetic thin film 33 toward the magnetic line concentrator 21 at the other end, and a small amount flows toward the magnetic line concentrator 21 at the other end through the center gap 211, so that the measured magnetic field at the center gap 211 is small; as shown in fig. 9(b), when the permeability of the soft magnetic thin film 33 is small, the magnetic flux flows mainly through the central gap 211 toward the magnetic line concentrator 21 at the other end, and flows a small amount through the soft magnetic thin film 33 toward the magnetic line concentrator 21 at the other end, so that the measured magnetic field at the central gap 211 is large. When the permeability of the soft magnetic thin film 33 changes periodically, the magnitude of the measured magnetic field at the central gap 211 also changes periodically and is modulated into a high-frequency signal.
As shown in fig. 4 and 7, the track-changing soft magnetic block 4 is made of a high-permeability soft magnetic material, the main block structure is suspended above the magnetic flux electric control unit 3, and four legs at the bottom are bonded and fixed on the upper surface of the magnetic measurement unit 2 where the magnetic force line collector 21 and the compensation coil 22 are located through epoxy glue, so that the track-changing efficiency of the Z-direction magnetic field is greatly improved.
In this embodiment, the track-changing soft magnetic block 4 and the four magnetic measurement units 2 (magnetic measurement unit 2#1 to magnetic measurement unit 2#4) jointly form a basic structure of the three-axis magnetic sensor, and the three-axis magnetic field measurement and decoupling principle is as follows:
the magnetic fields measured by the four magnetic measuring units 2 (magnetic measuring unit 2#1 to magnetic measuring unit 2#4) are:
in the formula (2), B1～B4Respectively shows the magnetic fields measured by the four magnetic measuring units 2 (the magnetic measuring unit 2#1 to the magnetic measuring unit 2#4), G is the magnetic field magnification of the magnetic line concentrator, Bext-x、Bext-yAnd Bext-zRespectively representing the components of the measured magnetic field in x, y and z directions, and k is the orbital transfer coefficient whose value is obtained by orbital transferThe soft magnetic block 4 and the four magnetic measurement units 2 jointly determine the efficiency of turning the Z-direction magnetic field into the plane magnetic field.
The components of the measured magnetic field in the x, y and z directions obtained by decoupling calculation are calculated according to the formula:
the orbit-changing soft magnetic block 4 and the four magnetic measurement units 2 are adopted to realize high-efficiency orbit changing of the Z-direction magnetic field, realize the aggregation amplification and planarization measurement of the three-axis magnetic field, and effectively improve the three-axis orthogonality and the resolution of the Z-direction magnetic field.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make numerous possible variations and modifications to the present invention, or modify equivalent embodiments to equivalent variations, without departing from the scope of the invention, using the teachings disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention should fall within the protection scope of the technical scheme of the present invention, unless the technical spirit of the present invention departs from the content of the technical scheme of the present invention.
Claims (10)
1. The utility model provides an utilize magnetism stress control to restrain magnetic noise's integration triaxial magnetic sensor which characterized in that: the magnetic flux and electric control device comprises an insulating substrate (1), a magnetic flux and electric control unit (3), a track-changing soft magnetic block (4) and at least four magnetic measurement units (2);
the magnetic measurement unit (2) is arranged on the surface of the insulating substrate (1) in a central symmetry manner, the magnetic electrification regulating and controlling unit (3) is placed on the insulating substrate (1) by taking the symmetric central point of the magnetic measurement unit (2) as the center, and the track-changing soft magnetic block (4) is placed on the magnetic measurement unit (2) by taking the symmetric central point of the magnetic measurement unit (2) as the center;
each magnetic measurement unit (2) comprises a magnetic line concentrator (21), a compensation coil (22) and a magnetic sensitive unit (23), the compensation coil (22) is wound on the magnetic line concentrator (21), the magnetic line concentrator (21) comprises two concentrator units (212) which are arranged at intervals, and two sensitive magneto resistors (231) of the magnetic sensitive unit (23) are positioned in a central gap (211) between the two concentrator units (212);
magnetic flux electricity accuse unit (3) are including piezoelectricity drive layer (31), resonance structure (32) and soft-magnetic film (33), resonance structure (32) are including solid beam (322) and anchor point (321) of supporting solid beam (322), and anchor point (321) support is fixed on insulating base (1), resonance structure (32) are two W structures, gu beam (322) include central beam and stretch out the roof beam, central beam is the funnel shape, it is 45 jiaos with central beam to stretch out the roof beam and arranges and be connected with anchor point (321), piezoelectricity drive layer (31) are located the upper surface of solid beam (322), soft-magnetic film (33) are located the lower surface that stretches out the roof beam and are located central clearance (211) top.
2. The integrated three-axis magnetic sensor of claim 1, wherein: the insulating substrate (1) is a silicon substrate with an insulating layer deposited on the surface.
3. The integrated three-axis magnetic sensor of claim 1, wherein: the magnetic sensing unit (23) comprises two reference magneto resistors (232), the reference magneto resistors (232) are located below the collector unit (212) and arranged close to one side of the central gap (211), and the two sensing magneto resistors (231) and the two reference magneto resistors (232) form a Wheatstone bridge.
4. The integrated three-axis magnetic sensor of claim 3, wherein: the central line of the central gap (211) of the magnetic line concentrator (21) and the central axis of the magnetic line concentrator (21) form 45 degrees, the magnetic flux directions of the two sensitive magneto resistors (231) are vertical to the central line of the central gap (211), and the magnetic flux direction of the reference magneto resistor (232) is parallel to the central axis of the magnetic line concentrator (21).
5. The integrated three-axis magnetic sensor of claim 4, wherein: the center lines of the center gaps (211) of the two magnetic line collectors (21) which are symmetrically arranged with each other about the center point of symmetry are arranged in parallel.
6. The integrated three-axis magnetic sensor of claim 1, wherein: the piezoelectric driving layer (31) is sequentially provided with a top electrode (311), a piezoelectric substrate (312) and a bottom electrode (313) from bottom to top.
7. The integrated three-axis magnetic sensor of claim 1, wherein: the track-changing soft magnetic block (4) comprises a soft magnetic block main body (41) and a soft magnetic block supporting part (42), the soft magnetic block main body (41) is arranged on the magnetic measuring unit (2) in a crossing mode through the soft magnetic block supporting part (42), and the soft magnetic block supporting part (42) is located above the collector unit (212) close to the symmetrical center point.
8. The integrated three-axis magnetic sensor of claim 1, wherein: the sensitive magneto-resistor (231) and the reference magneto-resistor (232) of the magnetic sensitive unit (23) are prepared by GMR or TMR.
9. The integrated three-axis magnetic sensor of claim 1, wherein: the compensation coil (22) is a ring-shaped coil structure formed by encircling a top layer coil (221) and a bottom layer coil (222) which are respectively distributed on the upper surface and the lower surface of the magnetic line concentrator (21).
10. The integrated three-axis magnetic sensor of claim 1, wherein: the soft magnetic film (33) is prepared by FeSiBPC or FeGaB.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010456328.XA CN111624525B (en) | 2020-05-26 | 2020-05-26 | Integrated three-axis magnetic sensor for suppressing magnetic noise by utilizing magnetic stress regulation and control |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010456328.XA CN111624525B (en) | 2020-05-26 | 2020-05-26 | Integrated three-axis magnetic sensor for suppressing magnetic noise by utilizing magnetic stress regulation and control |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111624525A CN111624525A (en) | 2020-09-04 |
| CN111624525B true CN111624525B (en) | 2022-06-14 |
Family
ID=72271124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010456328.XA Active CN111624525B (en) | 2020-05-26 | 2020-05-26 | Integrated three-axis magnetic sensor for suppressing magnetic noise by utilizing magnetic stress regulation and control |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111624525B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113030804B (en) * | 2021-03-01 | 2022-12-23 | 歌尔微电子股份有限公司 | Sensor and electronic device |
| CN114114102B (en) * | 2021-11-18 | 2024-01-23 | 中国人民解放军国防科技大学 | Integrated planarization triaxial magnetic sensor and application method thereof |
| CN114609554B (en) * | 2022-05-11 | 2022-07-29 | 电子科技大学 | Length-telescopic resonant magnetic sensor |
| CN116165576B (en) * | 2022-12-23 | 2023-12-12 | 南方电网数字电网研究院有限公司 | TMRz axis magnetic field sensor |
| CN116990731A (en) * | 2023-08-03 | 2023-11-03 | 中国科学院微小卫星创新研究院 | Fluxgate clamp and magnetic field measuring method |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1955754A (en) * | 2005-10-26 | 2007-05-02 | C.R.F.阿西安尼顾问公司 | Thin-film device for detection of physical quantities, in particular a magnetic field, and corresponding method of detection |
| DE102008041859A1 (en) * | 2008-09-08 | 2010-03-11 | Robert Bosch Gmbh | Magnetic field sensor arrangement for measuring spatial components of a magnetic field |
| CN102810630A (en) * | 2011-05-30 | 2012-12-05 | 中国科学院物理研究所 | Anisotropy-modulatable magnetic thin-film structure, magneto-dependent sensor and preparation method of magneto-dependent sensor |
| CN103116144A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Z-direction magnetic field sensor with magnetic orbit structure |
| CN103116143A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Integrated high-accuracy triaxial magnetic sensor |
| CN103323795A (en) * | 2013-06-21 | 2013-09-25 | 中国人民解放军国防科学技术大学 | Integrated three-axis magnetic sensor |
| CN103323794A (en) * | 2013-06-21 | 2013-09-25 | 中国人民解放军国防科学技术大学 | GMR-MEMS integrated weak magnetic sensor adopting plane micro-coil |
| CN106646278A (en) * | 2016-12-09 | 2017-05-10 | 中国人民解放军国防科学技术大学 | Low-noise MEMS pre-amplification device utilizing high-resolution magnetic field detection |
| CN107894577A (en) * | 2017-10-27 | 2018-04-10 | 中国人民解放军国防科技大学 | Weak magnetic sensor for inhibiting 1/f noise by regulating and controlling magnetic moment by electric field and application method thereof |
| CN107894576A (en) * | 2017-10-27 | 2018-04-10 | 中国人民解放军国防科技大学 | Integrated low-power-consumption three-axis magnetic field sensor with high Z-direction resolution |
| CN108413992A (en) * | 2018-01-30 | 2018-08-17 | 江苏多维科技有限公司 | A kind of three axis premodulated low noise magnetic resistance sensors |
| CN109307850A (en) * | 2018-08-30 | 2019-02-05 | 中国人民解放军国防科技大学 | Magnetic sensor for suppressing low-frequency noise by utilizing magnetic flux electric control and application method thereof |
| CN110286338A (en) * | 2019-06-13 | 2019-09-27 | 中国人民解放军国防科技大学 | Magnetic field modulation structure suitable for integral type triaxial magnetic sensor |
| CN110286340A (en) * | 2019-06-13 | 2019-09-27 | 中国人民解放军国防科技大学 | Serial-type triaxial integration magnetic sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8395381B2 (en) * | 2010-07-09 | 2013-03-12 | Invensense, Inc. | Micromachined magnetic field sensors |
-
2020
- 2020-05-26 CN CN202010456328.XA patent/CN111624525B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1955754A (en) * | 2005-10-26 | 2007-05-02 | C.R.F.阿西安尼顾问公司 | Thin-film device for detection of physical quantities, in particular a magnetic field, and corresponding method of detection |
| DE102008041859A1 (en) * | 2008-09-08 | 2010-03-11 | Robert Bosch Gmbh | Magnetic field sensor arrangement for measuring spatial components of a magnetic field |
| CN102810630A (en) * | 2011-05-30 | 2012-12-05 | 中国科学院物理研究所 | Anisotropy-modulatable magnetic thin-film structure, magneto-dependent sensor and preparation method of magneto-dependent sensor |
| CN103116144A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Z-direction magnetic field sensor with magnetic orbit structure |
| CN103116143A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Integrated high-accuracy triaxial magnetic sensor |
| CN103323795A (en) * | 2013-06-21 | 2013-09-25 | 中国人民解放军国防科学技术大学 | Integrated three-axis magnetic sensor |
| CN103323794A (en) * | 2013-06-21 | 2013-09-25 | 中国人民解放军国防科学技术大学 | GMR-MEMS integrated weak magnetic sensor adopting plane micro-coil |
| CN106646278A (en) * | 2016-12-09 | 2017-05-10 | 中国人民解放军国防科学技术大学 | Low-noise MEMS pre-amplification device utilizing high-resolution magnetic field detection |
| CN107894577A (en) * | 2017-10-27 | 2018-04-10 | 中国人民解放军国防科技大学 | Weak magnetic sensor for inhibiting 1/f noise by regulating and controlling magnetic moment by electric field and application method thereof |
| CN107894576A (en) * | 2017-10-27 | 2018-04-10 | 中国人民解放军国防科技大学 | Integrated low-power-consumption three-axis magnetic field sensor with high Z-direction resolution |
| CN108413992A (en) * | 2018-01-30 | 2018-08-17 | 江苏多维科技有限公司 | A kind of three axis premodulated low noise magnetic resistance sensors |
| CN109307850A (en) * | 2018-08-30 | 2019-02-05 | 中国人民解放军国防科技大学 | Magnetic sensor for suppressing low-frequency noise by utilizing magnetic flux electric control and application method thereof |
| CN110286338A (en) * | 2019-06-13 | 2019-09-27 | 中国人民解放军国防科技大学 | Magnetic field modulation structure suitable for integral type triaxial magnetic sensor |
| CN110286340A (en) * | 2019-06-13 | 2019-09-27 | 中国人民解放军国防科技大学 | Serial-type triaxial integration magnetic sensor |
Non-Patent Citations (1)
| Title |
|---|
| 基于GMR的高性能小型化磁传感器理论与技术研究;胡佳飞;《中国博士学位论文全文数据库基础科学辑》;20160115;全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111624525A (en) | 2020-09-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111624525B (en) | Integrated three-axis magnetic sensor for suppressing magnetic noise by utilizing magnetic stress regulation and control | |
| US6131457A (en) | Acceleration sensor | |
| US6501268B1 (en) | Magnetic sensor with modulating flux concentrator for 1/f noise reduction | |
| US7046002B1 (en) | Magnetic sensor with variable sensitivity | |
| CN107894577B (en) | Weak magnetic sensor for inhibiting 1/f noise by regulating and controlling magnetic moment by electric field and application method thereof | |
| CN103116143B (en) | Integrated high-accuracy triaxial magnetic sensor | |
| US6670809B1 (en) | Magnetic sensor with modulating flux concentrator having minimized air resistance for 1/f noise reduction | |
| WO2020200076A1 (en) | Magnetoresistive inertial sensor chip | |
| CN107894576B (en) | Integrated low-power-consumption three-axis magnetic field sensor with high Z-direction resolution | |
| CN104567848B (en) | A kind of micromechanical gyro based on tunnel magneto-resistance effect | |
| CN109307850B (en) | Magnetic sensor for suppressing low-frequency noise by utilizing magnetic flux electric control and application method thereof | |
| CN103116144B (en) | Z-direction magnetic field sensor with magnetic orbit structure | |
| CN103901363A (en) | Single-chip Z-axis linear magneto-resistive sensor | |
| CN102854339A (en) | Micro acceleration transducer based on silicon substrate giant magnetoresistance effect | |
| CN102914394B (en) | MEMS (Micro Electro Mechanical System) giant magneto-resistance type high pressure sensor | |
| CN203811786U (en) | Single-chip triaxial magnetic field sensor | |
| CN203480009U (en) | Single-chip Z-axis linear magneto-resistor sensor | |
| CN102853826A (en) | Silicon base tunneling magnetoresistance micro gyroscope | |
| CN208026788U (en) | A kind of AMR linear transducers based on winding bias | |
| CN110068318A (en) | A kind of tunnel magnetoresistive microthrust test device based on snakelike hot-wire coil | |
| CN202853817U (en) | MEMS tunnel magnetic resistance height pressure transducer | |
| US11067647B2 (en) | Low-noise magnetoresistive sensor having multi-layer magnetic modulation structure | |
| CN107131819B (en) | Single-axis micro-mechanical displacement sensor based on tunnel magnetoresistance effect | |
| CN204730842U (en) | A kind of micromechanical gyro based on tunnel magneto-resistance effect | |
| CN202853815U (en) | MEMS colossal magneto-resistance type height pressure transducer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |