CN208026788U - A kind of AMR linear transducers based on winding bias - Google Patents
A kind of AMR linear transducers based on winding bias Download PDFInfo
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- CN208026788U CN208026788U CN201820524830.8U CN201820524830U CN208026788U CN 208026788 U CN208026788 U CN 208026788U CN 201820524830 U CN201820524830 U CN 201820524830U CN 208026788 U CN208026788 U CN 208026788U
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Abstract
The utility model discloses a kind of AMR linear transducers based on winding bias,The Wheatstone bridge of the basic structure of AMR linear transducers is rearranged,Specifically,By upper two groups of bridge lines according to from the horizontal by 45° angle or 135 ° of angle designs,Two groups of electric bridges are symmetrical arranged with two groups of electric bridges above below,Magnetic sensitive films are covered on AMR linear transducers and are shaped,And one layer of silicon nitride protective layer is first grown on Magnetic sensitive films,Then one layer of A1 electrode is grown above again and makes figure by lithography,The utility model can reduce preparation process difficulty,Increase the measurement range of AMR sensor,Both solved the problems, such as that Hall sensor sensitivity was low,Solve the problems, such as that AMR sensor measurement range is narrow again,Greatly increase the application field and range of AMR sensor,With good social value and economic benefit.
Description
Technical field
The utility model is related to linear current sensing IC field, specially a kind of AMR linear sensings based on winding bias
Device is suitable for heed contacted measure high current（0A to 1000A）.
Background technology
The main function of current sensor is the electric current for measuring electrified wire, and most easy method is that direct measure is led to
The voltage at resistance both ends in circuit extrapolates the size of current of circuit, but as social progress develops, in power-on circuit
Electric current it is increasing, can not the electric current in circuit be calculated using the method for measuring resistance both end voltage, because electric
Stream is bigger, and resistance heating is more severe, and the danger with height especially measures new-energy automobile supply current, charging pile work(
The place of the high currents such as current point, this method are gradually given it up, instead are directly led using measuring to be powered
The size for the magnetic induction intensity that line generates, extrapolates the size of electric current, mainly there is Hall sensor, TMR sensor, AMR sensings
Device, Hall sensor have the measurement range of ultra-wide, can measure larger current（1000A or more）, but due to hall sensing
Device sensitivity is relatively low, for reduced-current（500A or less）, measurement accuracy is not big enough, so having gradually appeared with TMR and AMR effects
Linear current sensing IC based on answering.And although TMR sensor precision is higher, due to complex process, manufacturing cost compared with
Height does not have advantage with Hall sensor in price, under normal circumstances, competitive advantage unobvious.And the electricity based on amr effect
Flow sensor has that high sensitivity, technique is relatively easy, the lower advantage of manufacturing cost, has begun the foot for causing scientific research personnel
Enough to pay attention to, more companies have developed AMR current sensors, have been greatly improved the cost performance of current sensor.At this stage
AMR sensor mainly generates an equivalent bias-field using Barber electrodes, and electric current is made to be deviated relative to easy magnetizing axis
45° angle（Attached drawing 1）, to generate linear convergent rate, the magnetic induction intensity range that this method can measure is probably in ± 20Gauss
Between, it is mainly related with the saturation magnetization of permalloy between corresponding electric current about ± 50A, and measurement range
Bigger, sensitivity is lower.
Anisotropic magnetoresistive（AMR）When encountering externally-applied magnetic field, resistance value can be with for the certain metals of sensor or semiconductor
The size for externally-applied magnetic field changes, and this phenomenon is called magnetoresistance, and magnetoresistive sensor is made using magnetoresistance.
1857, Thomson had found the anisotropic magneto-resistive effect of permalloy；For there is the strong of anisotropic properties
The variation of magnetic metal, magnetic resistance is that angle is related between magnetic field and electric current；Our this common metalloid have iron, cobalt, nickel and
Its alloy etc..
When external magnetic field and the built-in magnetic direction of magnet are at zero angle, resistance be will not as externally-applied magnetic field changes and
It changes；But when there is certain angle in the built-in magnetic field of external magnetic field and magnet, magnet internal magnetization vector can be inclined
It moves, film resistor reduces, we are known as anisotropic-magnetoresistance effect to this characteristic（Anisotropic
Magnetoresistive Sensor, abbreviation AMR）.
The resistance R of thin film alloys will change because of angle change, and resistance is nonlinear with magnetic signature, and each
Resistance is not with unique externally-applied magnetic field value at correspondence；When current direction is parallel with the direction of magnetization, sensor is most sensitive,
When current direction and the direction of magnetization are at 45 degree of angles, general magnetic resistance works in figure near linear zone, may be implemented so defeated
The linear characteristic gone out.The basic structure of AMR magnetic sensor constitutes Wheatstone bridge by four magnetic resistance；Wherein power supply is
Vb, electric current flow through resistance；As soon as when applying a bias magnetic field H on electric bridge, the direction of magnetization of two resistance staggered relatively
It can be rotated towards current direction, the resistance value of the two resistance can increase；And the direction of magnetization of other two resistance staggered relatively
It can be rotated towards the direction opposite with electric current, the resistance value of two resistance is then reduced.Pass through two output end output differences of test electric bridge
Voltage signal can obtain external magnetic field value.
Utility model content
The purpose of this utility model is to provide a kind of AMR linear transducers and its design method based on winding bias,
Reduce technology difficulty, increase sensor magnetic field test scope, expand the application range based on amr effect current sensor, with gram
Take the deficiencies in the prior art.
To achieve the above object, the utility model provides the following technical solutions：
A kind of AMR linear transducers based on winding bias, including the Wheatstone bridge in AMR linear transducers, by AMR
Two groups of bridge lines are according to from the horizontal by 45° angle or the design of 135 ° of angles on Wheatstone bridge in linear transducer, below two groups
Electric bridge is symmetrical arranged with two groups of electric bridges above, and Magnetic sensitive films are covered on AMR linear transducers and are shaped, and in Magnetic sensitive films
It is upper first to grow one layer of silicon nitride protective layer, one layer of A1 electrode is then grown above again and makes figure by lithography, using Barber electricity
The biasing of pole, permanent magnetism body bias or winding bias as AMR linear transducers, the bias electrode direction are generated with tested electric current
Tested magnetic direction it is perpendicular.
The utility model has the beneficial effects that：On the basis of ensureing current properties of product, the utility model can reduce
Preparation process difficulty, increases the measurement range of AMR sensor, has not only solved the problems, such as that Hall sensor sensitivity is low, but also solves
The narrow problem of AMR sensor measurement range, greatly increases the application field and range of AMR sensor, has good society
Value and economic benefit.
Description of the drawings
Fig. 1 is the principle schematic of existing AMR current sensors；
Fig. 2 is the Wheatstone bridge in the AMR linear transducers of the utility model；
The structural schematic diagram one of the positions Fig. 3 the utility model；
Fig. 4 is the angled relationships schematic diagram of the variation and magnetic moment and electric current of each bridge resistor R in the utility model；
Fig. 5 is AMR linear transducer output voltages V in the utility modelOUTWith the change schematic diagram in tested magnetic field；
The structural schematic diagram two of Fig. 6 the utility model.
Specific implementation mode
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
The every other embodiment obtained, shall fall within the protection scope of the present invention.
- 6 are please referred to Fig.1, the utility model provides a kind of technical solution：A kind of AMR linear sensings based on winding bias
The design method of device rearranges the Wheatstone bridge of the basic structure of AMR linear transducers, specifically, by upper two groups of bridges
Line according to from the horizontal by 45° angle or the design of 135 ° of angles, below two groups of electric bridges be symmetrical arranged with two groups of electric bridges above, by magnetosensitive
Film is covered on AMR linear transducers and shapes, and one layer of silicon nitride protective layer is first grown on Magnetic sensitive films, then exists again
One layer of A1 electrode is grown above and makes figure by lithography, after coil is powered, can generate equal in magnitude, direction in electric bridge the right and left
The magnetic field of opposite horizontal direction, and magnetic induction intensity is directly proportional to coil current；At this time | H1 |=| H2 |=Hx, when tested electricity
Miscarry raw magnetic induction intensity | Hy | when direction change, | H1 and | H2 | two magnetic fields generate and magnetic direction can gradually occur
Variation causes magnetic moment direction inside Magnetic sensitive films to change with film electric current angular separation, occurs so as to cause film resistor
Variation causes electric bridge to export a voltage value, the size and Orientation of tested electric current can be extrapolated according to this voltage value.
Wherein specifically shifting realization process onto is：When measured magnetic field is zero, the resistance of four electric bridges is equal, it is believed that
R1=R2=R3=R4=R, the V of electric bridge output at this timeOUT=VOUT+-VOUT-=0V；When tested magnetic direction is upward, and | Hy |≤| Hx |
When, the magnetic moment direction in film can be consistent with tested magnetic field and the vector sum direction in winding bias magnetic field, this direction can be with
The magnetic field size of tested magnetic field Hy increases and slowly changes, and the angle of electric current and magnetic moment in four electric bridges is caused to change, and four
The resistance of a electric bridge changes with the size variation in tested magnetic field, it is assumed that the absolute value of this changing value is Δ R, then R1=R+ Δs
R, R2=R- Δ R, R3=R- Δ R, R4=R+ Δ R, then VOUT=（R3/(R1+R3)）/（R4/(R2+R4)）=-Δ R/R, this value
For negative value；When tested magnetic direction is downward, and | Hy |≤| Hx | when, the magnetic moment direction in film can be with tested magnetic field and line
The vector sum direction for enclosing bias magnetic field is consistent, and the resistance of four electric bridges changes with the size variation in tested magnetic field, it is assumed that this
The absolute value of changing value is Δ R, then R1=R- Δs R, R2=R+ Δs R, R3=R+ Δ R, R4=R- Δ R, then VOUT=（R3/(R1+
R3)）/（R4/(R2+R4)）=Δ R/R, this value are positive value；Then VOUTThere can be different output with the variation of external magnetic field；Using
The biasing of Barber electrodes, permanent magnetism body bias or winding bias as AMR linear transducers, the bias electrode direction are and are tested
It is perpendicular to measure magnetic direction.
It is formed by a kind of AMR linear transducers based on winding bias, including AMR linear transducers according to the above method
In Wheatstone bridge, by two groups of bridge lines on the Wheatstone bridge in AMR linear transducers according to from the horizontal by 45° angle or
The design of 135 ° of angles, below two groups of electric bridges be symmetrical arranged with two groups of electric bridges above, Magnetic sensitive films are covered on AMR linear transducers
And shape, and one layer of silicon nitride protective layer is first grown on Magnetic sensitive films, then one layer of A1 electrode and photoetching are being grown above again
Go out figure, the biasing using Barber electrodes, permanent magnetism body bias or winding bias as AMR linear transducers, the bias electrode
Direction is that the tested magnetic direction that is generated with tested electric current is perpendicular.
Without using Barber electrodes as biasing, it can also be solved by way of applied bias magnetic field
This problem needs outside the direction perpendicular with measured magnetic direction during specifically used plus one biases magnetic
, the direction of bias magnetic field can also can turn left from the right side from left to right, when designing bridge structure, it is only necessary to change four
The arragement direction of electric bridge, as shown in fig. 6, its principle with it is above-mentioned consistent.
The feature of this implementation maximum is：
1, four electric bridges are respectively designed to lines and X-axis positive direction angle at 45 ° and 135 ° of corner structures, specific arrangement is pressed
Different according to different bias modes, as shown in attached drawing 2 and attached drawing 6, and the direction of four electric bridges can be with attached drawing 2 and attached drawing 6
Basic right and left mutually changing exchanges up and down, and outputting and inputting can also exchange, and not influence the linear convergent rate of sensor, it is only necessary to
One measurement magnetic field of regulation is forward and reverse when preparing device.The width and length of lines can be adjusted at random as needed.
2, it is biased using internal coil biasing or external magnetic field, bias magnetic field can be adjusted according to different application places
Size, to obtain more suitable measurement range.
One layer of silicon nitride inert layer of growth in advance is needed when 3, using internal coil biasing or external biasing, protects magnetosensitive
Film.
4, external magnetic field biasing can be permanent magnetism body bias, can also be winding bias.
Although the utility model is described in detail with reference to the foregoing embodiments, those skilled in the art is come
Say, still can with technical scheme described in the above embodiments is modified, or to which part technical characteristic into
Row equivalent replacement, within the spirit and principle of the utility model, any modification, equivalent replacement, improvement and so on should all
It is included within the scope of protection of this utility model.
Claims (1)
1. a kind of AMR linear transducers based on winding bias, including the Wheatstone bridge in AMR linear transducers, feature
It is：Two groups of bridge lines on Wheatstone bridge in AMR linear transducers are set according to from the horizontal by 45° angle or 135 ° of angles
Meter, below two groups of electric bridges be symmetrical arranged with two groups of electric bridges above, Magnetic sensitive films are covered on AMR linear transducers and are shaped,
And first grow one layer of silicon nitride protective layer on Magnetic sensitive films, then grow one layer of A1 electrode above again and make figure by lithography,
Biasing using Barber electrodes, permanent magnetism body bias or winding bias as AMR linear transducers, the bias electrode direction be with
The tested magnetic direction that tested electric current generates is perpendicular.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108267632A (en) * | 2018-04-13 | 2018-07-10 | 贵州雅光电子科技股份有限公司 | A kind of AMR linear transducers and its design method based on winding bias |
| CN109781149A (en) * | 2018-12-25 | 2019-05-21 | 西安交通大学 | A kind of AMR sensor structure and its manufacturing method |
| CN110631611A (en) * | 2019-09-20 | 2019-12-31 | 贵州雅光电子科技股份有限公司 | Sensitive unit structure of AMR sensor chip |
| WO2020258349A1 (en) * | 2019-06-25 | 2020-12-30 | 潍坊歌尔微电子有限公司 | Wafer-level magnetic sensor and electronic device |
-
2018
- 2018-04-13 CN CN201820524830.8U patent/CN208026788U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108267632A (en) * | 2018-04-13 | 2018-07-10 | 贵州雅光电子科技股份有限公司 | A kind of AMR linear transducers and its design method based on winding bias |
| CN109781149A (en) * | 2018-12-25 | 2019-05-21 | 西安交通大学 | A kind of AMR sensor structure and its manufacturing method |
| WO2020258349A1 (en) * | 2019-06-25 | 2020-12-30 | 潍坊歌尔微电子有限公司 | Wafer-level magnetic sensor and electronic device |
| CN110631611A (en) * | 2019-09-20 | 2019-12-31 | 贵州雅光电子科技股份有限公司 | Sensitive unit structure of AMR sensor chip |
| CN110631611B (en) * | 2019-09-20 | 2022-05-13 | 贵州雅光电子科技股份有限公司 | Sensitive unit structure of AMR sensor chip |
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