CN106646278A - Low-noise MEMS pre-amplification device utilizing high-resolution magnetic field detection - Google Patents
Low-noise MEMS pre-amplification device utilizing high-resolution magnetic field detection Download PDFInfo
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- CN106646278A CN106646278A CN201611128681.5A CN201611128681A CN106646278A CN 106646278 A CN106646278 A CN 106646278A CN 201611128681 A CN201611128681 A CN 201611128681A CN 106646278 A CN106646278 A CN 106646278A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0011—Arrangements or instruments for measuring magnetic variables comprising means, e.g. flux concentrators, flux guides, for guiding or concentrating the magnetic flux, e.g. to the magnetic sensor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
- G01R33/0029—Treating the measured signals, e.g. removing offset or noise
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
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Abstract
The invention discloses a low-noise MEMS pre-amplification device utilizing high-resolution magnetic field detection, which comprises an insulation substrate and a magnetic line of force collector, and is characterized in that the bottom surface of the magnetic line of force collector is wound with a bottom coil, the top surface of the magnetic line of force collector is wound with a top coil, the bottom coil and the top coil form a current coil which is wound on the magnetic line of force collector together, the magnetic line of force collector is of a concentric double square structure and formed by arranging two high-permeability components in an axial symmetry manner, the two high-permeability components are formed on the insulation substrate and grown by adopting a high-permeability material, a gap is reserved between the two high-permeability components, the insulation substrate is provided with a magnetic field sensitive element in the gap, and the insulation substrate is provided with a micro-voltage bridge modulation assembly located above the magnetic field sensitive element. The low-noise MEMS pre-amplification device can realize nV-level low noise amplification, and has the advantages of good magnetic field collecting and amplifying effect, good external magnetic field interference resistant performance, small size and high electric-magnetic signal conversion efficiency.
Description
Technical field
The present invention relates to Technique of Weak Signal Detection field, and in particular to a kind of low noise of utilization high resolution detection of magnetic field
Sound MEMS preamplifier parts, for the preposition amplification of ultra-weak electronic signal extremely low frequency low noise.
Background technology
Low-noise preamplifier has been widely used at present all kinds of wireless usually as first order amplifying circuit
In electric receiver and high sensitive electronic detecting devices, its noise level has been largely fixed whole amplifying circuit or even whole
The Noise Correlation energy of instrument and equipment.Traditional low-noise amplifier normally due to by silicon-based semiconductor in physical mechanism
Limit, there is obvious 1/f noise characteristic, frequency is lower, and noise is bigger, cause for extremely low frequency (<1Hz) the low noise of signal
Amplifier its noise level is extremely difficult to sub- nV magnitudes.In the case where much needing to detect extremely low frequency weak signal, it is difficult to reach
To requiring.For example：Ocean electric field detection can be applicable to the aspects such as Marine Geology exploration, Underwater Target Detection, Corrosion monitoring, but
Because sea water is conductive, ocean electric field frequency domain is higher, decays faster, and general ocean electric field detection is extremely low frequency weak signal, is passed
System amplifier is difficult to meet the needs of ocean electric field detection.
At present, scientific experiment field it is widely used be Stanford Research companies of the U.S. SR560 type low noises
There is obvious 1/f noise characteristic in sound forward voltage amplifier, the low noise forward voltage amplifier, its break frequency exists
100Hz or so, typical low frequency background noise is 4nV/ √ Hz@100Hz, 10nV/ √ Hz@10Hz, 40nV/ √ Hz@1Hz.Additionally,
The outstanding low noise amplification chip opa211 high frequency treatments noise density of TI companies is 1.1nV/ √ Hz, and its break frequency is in 100Hz
Left and right, the noise density at 1Hz is 6nV/ √ Hz.In order to reduce low frequency 1/f noise, domestic and international research worker is generally adopted and cut
The method of ripple modulation.Domestic Qiu's he et al. designs and have developed copped wave preamplifier and is tested, in frequency band range
0.001Hz～10kHz, equivalent input noise density is 3.75nV/ √ Hz.German D.Drung et al. is designed and have developed a
Copped wave low-noise amplifier, equivalent input noise density reaches 0.73nV/ √ Hz, and the break frequency of 1/f noise is 3mHz.In order to
Realize that Low Frequency Low Noise amplifies, patent both domestic and external is also mainly realized by chopping modulation, there is not yet other are based on new principle
Extremely low frequency low-noise amplifier research.But, the irrational characteristic such as chopper amplifier leads to because clock is routed, electric charge injection,
Can there is certain residual offset in output, so as to have impact on its performance.It can be seen that, the noise of custom low noise amplifier reaches
1nV/ √ Hz or so are difficult to continue to reduce, and the noise at extremely low frequency may be bigger, it is difficult to meet the faint letter of some extremely low frequency
Number measurement demand.Urgently carry out the extremely low frequency low-noise preamplifier based on new principle to study.
The content of the invention
The technical problem to be solved in the present invention：For the problems referred to above of prior art, there is provided one kind can realize Ya Nafu
The low noise amplification of rank, magnetic field aggregation amplification effect is good, good anti-external magnetic field jamming performance, small volume, electricity-magnetic signal conversion effect
The low noise MEMS preamplifier parts of the high utilization high resolution detection of magnetic field of rate.
In order to solve above-mentioned technical problem, the technical solution used in the present invention is：
A kind of low noise MEMS preamplifier parts of utilization high resolution detection of magnetic field, including dielectric base and the magnetic line of force
Collector, is arranged with bottom coil on the bottom surface of the magnetic line of force collector, be arranged with the top surface of the magnetic line of force collector
Top layer coil, the magnetic line of force collector is formed on a dielectric base in back-shaped structure and by two using high permeability material growth
High magnetic conductive part axisymmetricly arrange composition, gap is provided between two high magnetic conductive parts, in the dielectric base be located at institute
State and be provided with gap magnetic field sensing element, be located in the dielectric base above magnetic field sensing element and be provided with the modulation of minute-pressure electric bridge
Component.
Preferably, the magnetic field sensing element is quick by the first TMR sensing elements, the 2nd TMR sensing elements, the 3rd TMR
The Wheatstone bridge of sensing unit, the 4th TMR sensing elements composition, the sensitive unit of a TMR sensing elements, the 2nd TMR
Part, the 3rd TMR sensing elements, the sensitive magnetic field of the 4th TMR sensing elements direction it is consistent, described two high magnetic conductive parts
Between gap include the first gap and the second gap, a TMR sensing elements and the 3rd TMR sensing elements are arranged in the
In one gap, the 2nd TMR sensing elements and the 4th TMR sensing elements are arranged in the second gap.
Preferably, the minute-pressure electric bridge modulation component includes minute-pressure cantilever beam, and the minute-pressure cantilever beam is respectively and located at exhausted
The 7th connection electrode in edge substrate is connected with the 8th connection electrode, and the minute-pressure cantilever beam is respectively arranged at two ends with minute-pressure electric bridge
Pedestal, the minute-pressure cantilever beam is fixed in dielectric base by minute-pressure electric bridge pedestal, and the bottom surface of the minute-pressure cantilever beam is upper
Modulated Films are equipped with the position in the first gap and the second gap.
Preferably, the minute-pressure cantilever beam is made using piezoelectric crystal material.
The present invention is had the advantage that using the low noise MEMS preamplifiers part tool of high resolution detection of magnetic field：
1st, in recent years the performance indications of high resolution magnetic field sensor are constantly lifted, and can detect the pole of pT magnitudes
Weak magentic-field.Your theorem is cut down according to Biot-Sa, using high resolution magnetic field sensor the magnetic field letter that hot-wire coil is inducted is detected
Number, the indirect measurement and amplification to ultra-weak electronic signal is capable of achieving, its extremely low frequency noise is expected to break through to sub- nV magnitudes, compares tradition
Low noise amplifier circuit is with the obvious advantage, and the present invention includes dielectric base and magnetic line of force collector, on the bottom surface of magnetic line of force collector
Be arranged with bottom coil, be arranged with top layer coil on the top surface of magnetic line of force collector, magnetic line of force collector in back-shaped structure and by
Two high magnetic conductive parts formed on a dielectric base using high permeability material growth axisymmetricly arrange composition, two high magnetic conductions
Gap is provided between part, is located in gap in dielectric base and is provided with magnetic field sensing element, magnetic-field-sensitive is located in dielectric base
Minute-pressure electric bridge modulation component is provided with above element, using high resolution magnetic field sensor technology to realize low noise before put
Greatly, magnetic signal is efficiently converted into the signal of telecommunication by the structure such as current coil and magnetic line of force collector, then it is first with magnetic-field-sensitive
Part causes the device to have the low noise amplification function of Ya Nafu ranks (nV levels) to the extremely low frequency signal of telecommunication.
2nd, magnetic line of force collector of the present invention is in back-shaped structure so that magnetic field forms loop, it is possible to increase magnetic field aggregation is amplified
Effect.
3rd, magnetic line of force collector of the invention in back-shaped structure and is grown in dielectric base by two using high permeability material
The high magnetic conductive part of upper formation axisymmetricly arranges composition, and gap is provided between two high magnetic conductive parts, using between two
The symmetrical structure of gap, external magnetic field is cancelled to the impact for exporting, and reduces impact of the external magnetic field to detection of magnetic field.
4th, the high magnetic conductive part of present invention composition magnetic line of force collector is grown on a dielectric base using high permeability material, is adopted
With preparing using MEMS technology, the size of device is reduced, while the distance of tested magnetic field position and current coil is reduced,
Improve electricity-magnetic signal transformation efficiency.
Description of the drawings
Fig. 1 is the main structure diagram of the embodiment of the present invention.
Fig. 2 is main structure diagram of the embodiment of the present invention without minute-pressure electric bridge modulation component part.
Fig. 3 is the coil principle structural representation of the embodiment of the present invention.
Fig. 4 is the wheatstone bridge configuration schematic diagram of the embodiment of the present invention.
Fig. 5 is A-A cross section structure diagrams in Fig. 1.
Fig. 6 is B-B cross section structure diagrams in Fig. 1.
Fig. 7 is C-C cross-sectional views in Fig. 1.
Marginal data：1st, dielectric base；11st, the first connection electrode；14th, the first connection electrode (11)～the 4th connection electricity
Pole；15th, the 5th connection electrode；16th, the 6th connection electrode；17th, the 7th connection electrode；18th, the 8th connection electrode；2nd, the magnetic line of force gathers
Storage；21st, high magnetic conductive part；211st, the first gap；212nd, the second gap；3rd, bottom coil；4th, top layer coil；5th, magnetic-field-sensitive
Element；51st, a TMR sensing elements；52nd, the 2nd TMR sensing elements；53rd, the 3rd TMR sensing elements；54th, the 4th TMR is sensitive
Element；6th, minute-pressure electric bridge modulation component；61st, minute-pressure cantilever beam；62nd, minute-pressure electric bridge pedestal；63rd, Modulated Films.
Specific embodiment
As shown in Figure 1, Figure 2 and Figure 3, the preposition amplifications of low noise MEMS of the utilization high resolution detection of magnetic field of the present embodiment
Device includes dielectric base 1 and magnetic line of force collector 2, and bottom coil 3, the magnetic line of force are arranged with the bottom surface of magnetic line of force collector 2
Top layer coil 4 is arranged with the top surface of collector 2, bottom coil 3 and top layer coil 4 form be set around magnetic line of force collector together
Current coil on 2, magnetic line of force collector 2 using high permeability material is grown in dielectric base 1 in back-shaped structure and by two
The high magnetic conductive part 21 (21#1 and 21#2) for being formed axisymmetricly arranges composition, two high magnetic conductive parts 21 (21#1 and 21#2) it
Between be provided with gap, in dielectric base 1 be located at gap in be provided with magnetic field sensing element 5, in dielectric base 1 be located at magnetic field sensing element
5 top is provided with minute-pressure electric bridge modulation component 6.In the present embodiment, two high magnetic conductive parts 21 of magnetic line of force collector 2 are using high
Permeability magnetic material is grown in dielectric base 1, and is provided with gap between two high magnetic conductive parts 21 so that the structure of magnetic line of force collector 2
Into the back-shaped structure with gap, the structure is conducive to improving the magnetic field congregational rate of magnetic line of force collector.For placing magnetic field
The gap of sensing element 5 can be arranged in the optional position of magnetic line of force collector 2, can realize the function that magnetic field is assembled.
In the present embodiment, bottom coil 3 and top layer coil 4 include discontinuous coil metal layer, and bottom coil 3
The metal connecting layer of the side of high magnetic conductive part 21 is passed sequentially through between coil metal layer, the coil metal layer of top layer coil 4 (in figure
Do not draw out) join end to end, formation is wound on the current coil on magnetic line of force collector 2, work of the current coil in pumping signal
With magnetic field is produced next time, the magnetic field is amplified by the aggregation of magnetic line of force collector 2, is detected by magnetic field sensing element 5 in gap location.
Referring to as shown in Figure 1, Figure 2 and Fig. 3, the current coil that bottom coil 3 and top layer coil 4 are constituted be located at dielectric base 1
On the 5th connection electrode 15 be connected with the 6th connection electrode 16, minute-pressure electric bridge modulation component 6 and in dielectric base 1
Seven connection electrodes 17 are connected with the 8th connection electrode 18.
As shown in figure 4, magnetic field sensing element 5 is by the first TMR sensing elements 51, the 2nd TMR sensing elements the 52, the 3rd
The Wheatstone bridge of TMR sensing elements 53, the 4th TMR sensing elements 54 4 composition, a TMR sensing elements 51, the 2nd TMR
Sensing element 52, the 3rd TMR sensing elements 53, the sensitive magnetic field of the 4th TMR sensing elements 54 4 direction it is consistent, two are high
Gap between magnetic conductive part 21 includes the first gap 211 and the second gap 212, and a TMR sensing elements 51 and the 3rd TMR are quick
Sensing unit 53 is arranged in the first gap 211, and the 2nd TMR sensing elements 52 and the 4th TMR sensing elements 54 are arranged between second
In gap 212.Magnetic field sensing element 5 is using quick by four TMR (Tunnel Magneto Resistance, tunnel magneto-resistance effect)
The Wheatstone bridge of sensing unit composition, each TMR sensing element can complete detection of magnetic field, and four TMR sensing elements are quick
The direction in sense magnetic field is consistent, then the magnetic-field-sensitive that the Wheatstone bridge is only produced to current coil, insensitive external magnetic field, so as to drop
Low impact of the external magnetic field to detection of magnetic field, compared with traditional detecting element, improves detection of magnetic field sensitivity.Need explanation
, magnetic field sensing element 5 is not limited to TMR sensing elements and constitutes Wheatstone bridge, as long as the first gap 211 and the can be put into
In two gaps 212 and can be used to detect the device in magnetic field and be capable of achieving, simply may be different in detection sensitivity.Ginseng
See Fig. 4, in the present embodiment Wheatstone bridge respectively with the first connection electrode 11, the second connection electrode in the dielectric base 1
12nd, the 3rd connection electrode 13, the 4th connection electrode 14 are connected.
As shown in Fig. 5, Fig. 6 and Fig. 7, minute-pressure electric bridge modulation component 6 includes minute-pressure cantilever beam 61, and minute-pressure cantilever beam 61 is distinguished
It is connected with the 8th connection electrode 18 with the 7th connection electrode 17 in dielectric base 1, the two ends difference of minute-pressure cantilever beam 61
Minute-pressure electric bridge pedestal 62 is provided with, minute-pressure cantilever beam 61 is fixed in dielectric base 1 by minute-pressure electric bridge pedestal 62, minute-pressure cantilever beam
The first gap 211 and the position in the second gap 212 are located on 61 bottom surface and are equipped with Modulated Films 63.In the present embodiment, minute-pressure electricity
In the form of minute-pressure cantilever beam, minute-pressure electric bridge pedestal 62 is bonded in dielectric base 1 to bridge modulation component 6 by means such as laser
On, the two ends of minute-pressure cantilever beam 61 are located on minute-pressure electric bridge pedestal 62, and Modulated Films 63 are located at the lower surface of minute-pressure cantilever beam 61, and just
To gap (the first gap 211 and the second gap 212) present position.Under the excitation of external power source, minute-pressure cantilever beam 61 drives
The up-down vibration of Modulated Films 63 so that the magnetic field at gap (the first gap 211 and the second gap 212) place is modulated, by Modulated Films
It is high-frequency alternating magnetic field that 63 modulation makes faint ultra low yield point steel at magnetic field sensing element, is effectively overcome 1/ in extremely low frequency domain
The adverse effect of f noises, improves magnetic field resolving power, improves the low-noise performance of preamplifier part.
In the present embodiment, minute-pressure cantilever beam 61 is made using piezoelectric crystal material, and piezoelectric crystal material is in external power source
The up-down vibration of minute-pressure cantilever beam 61 is enabled under excitation.Additionally, minute-pressure cantilever beam 61 can also can be driven using other it is micro-
It is prepared by the material of the pressure up-down vibration of cantilever beam 61.
The low noise MEMS preamplifiers part of the utilization high resolution detection of magnetic field of the present embodiment is by high resolution, low
The magnetic field that the measurement hot-wire coil of magnetic field sensing element 5 of noise is produced, realizes the indirect measurement and amplification to ultra-weak electronic signal, letter
Number have passed through input voltage Vi→ input current Ii→ tested magnetic field B → output voltage VoSeveral processes.Output voltage VoTable
Up to formula such as formula (1) Suo Shi；
In formula (1), RiFor input resistance (i.e. the resistance of current coil), ViFor input voltage, K is the magnetic field of input current
Conversion ratio, S is the sensitivity of magnetic susceptibility unit, and the expression formula of the magnetic field conversion ratio K of input current is K=B/Ii, magnetic susceptibility list
The sensitivity S expression formula of unit is S=Vo/ B, B be tested magnetic field, IiFor input current.Therefore before the low noise MEMS of the present embodiment
Shown in the expression formula such as formula (2) of voltage amplification factor A for putting amplifying device；
In formula (2), K for input current magnetic field conversion ratio, S for magnetic susceptibility unit sensitivity, RiFor input resistance (i.e.
The resistance of current coil).
Meanwhile, the noise main source and two parts of the low noise MEMS preamplifier parts of the present embodiment：Input
Current coil thermal noise eNiWith magnet-sensitive element output noise e of outfanNo, now the low noise MEMS of the present embodiment is preposition
Output noise e of amplifying deviceoExpression formula such as formula (3) shown in；
In formula (3), A for the present embodiment low noise MEMS preamplifier parts voltage amplification factor, eNiFor input
Current coil thermal noise, eNoFor the magnet-sensitive element output noise of outfan.Therefore, the low noise MEMS of the present embodiment is preposition
The equivalent input noise e of amplifying deviceiExpression formula such as formula (4) shown in；
In formula (4), eoFor the output noise of the low noise MEMS preamplifier parts of the present embodiment, A is the present embodiment
The voltage amplification factor of low noise MEMS preamplifier parts, eNiFor the current coil thermal noise of input, eNoFor outfan
Magnet-sensitive element output noise, K for input current magnetic field conversion ratio, S for magnetic susceptibility unit sensitivity, RiFor input resistance
(i.e. the resistance of current coil), k is Boltzmann constant, k=1.38 × 10-23J/K, T are absolute temperature.So, to reduce
The equivalent input noise of the low noise MEMS preamplifier parts of the present embodiment, needs the resistance R for reducing current coili, increase
Input current magnetic field conversion ratio K, sensing element output noise eNo, magnetic susceptibility unit sensitivity S.In practical operation, pass through
The thickness of control electric current coil, the resistance R of current coiliCan reach less than 10 ohm；By appropriate design magnetic line of force collector 2
Structure, input current magnetic field conversion ratio can reach 1nT/nA or so；And the magnetic-field-sensitive unit for being prepared by TMR sensing elements at present
The magnetic field sensitivity of part 5 can reach 200-400mV/mT, and output noise reaches 4-10nV/ √ Hz or so, can calculate equivalent defeated
Go out noise for 0.4-0.7nV/ √ Hz or so.Meanwhile, with MEMS technology and the high speed development of Magnetic Measurement Technology, can continue to improve
The noiseproof feature of the device.
In sum, the low noise MEMS preamplifiers part of the present embodiment is by using the sensitive units of highly sensitive TMR
Part and the grade soft magnetism micro structure of magnetic line of force collector 2 so that the present embodiment has the low noise of Ya Nafu ranks to the extremely low frequency signal of telecommunication
Sound enlarging function；And the magnetic field that the present embodiment is produced using the TMR sensing elements probe current of high sensitivity, low noise, lead to
It is high-frequency alternating magnetic field at magnetic field sensing element 5 that the modulation of toning masking 63 makes faint ultra low yield point steel so that extremely low frequency are believed
Number high-frequency signal is modulated in amplification process, effectively overcomes the adverse effect of 1/f noise in extremely low frequency domain；The present embodiment
Magnetic line of force collector 2 adopt symmetrical structure, improve sensitivity and reduce impact of the external magnetic field to gallon again.
The above is only the preferred embodiment of the present invention, and protection scope of the present invention is not limited merely to above-mentioned enforcement
Example, all technical schemes belonged under thinking of the present invention belong to protection scope of the present invention.It should be pointed out that for the art
Those of ordinary skill for, some improvements and modifications without departing from the principles of the present invention, these improvements and modifications
Should be regarded as protection scope of the present invention.
Claims (4)
1. low noise MEMS preamplifier parts of a kind of utilization high resolution detection of magnetic field, it is characterised in that：Including insulation base
Bottom (1) and magnetic line of force collector (2), on the bottom surface of the magnetic line of force collector (2) bottom coil (3), the magnetic force are arranged with
Top layer coil (4) is arranged with the top surface of line collector (2), the bottom coil (3) and top layer coil (4) form together winding
Current coil on magnetic line of force collector (2), the magnetic line of force collector (2) is in back-shaped structure and by the high magnetic conduction of two employings
The high magnetic conductive part (21) that Material growth is formed in dielectric base (1) axisymmetricly arranges composition, two high magnetic conductive parts
(21) gap is provided between, is located in the gap on the dielectric base (1) and is provided with magnetic field sensing element (5), the insulation
It is located in substrate (1) above magnetic field sensing element (5) and is provided with minute-pressure electric bridge modulation component (6).
2. low noise MEMS preamplifier parts of utilization high resolution detection of magnetic field according to claim 1, its feature
It is：The magnetic field sensing element (5) is quick by the first TMR sensing elements (51), the 2nd TMR sensing elements (52), the 3rd TMR
The Wheatstone bridge of sensing unit (53), the composition of the 4th TMR sensing elements (54) four, TMR sensing elements (51), the
Two TMR sensing elements (52), the 3rd TMR sensing elements (53), the direction in the sensitive magnetic field of the 4th TMR sensing elements (54) four
Unanimously, the gap between described two high magnetic conductive parts (21) includes the first gap (211) and the second gap (212), described the
One TMR sensing elements (51) and the 3rd TMR sensing elements (53) are arranged in the first gap (211), the sensitive units of the 2nd TMR
Part (52) and the 4th TMR sensing elements (54) are arranged in the second gap (212).
3. low noise MEMS preamplifier parts of utilization high resolution detection of magnetic field according to claim 1, its feature
It is：The minute-pressure electric bridge modulation component (6) includes minute-pressure cantilever beam (61), and the minute-pressure cantilever beam (61) is respectively and located at exhausted
The 7th connection electrode (17) in edge substrate (1) is connected with the 8th connection electrode (18), the two ends of the minute-pressure cantilever beam (61)
Minute-pressure electric bridge pedestal (62) is respectively equipped with, the minute-pressure cantilever beam (61) is fixed on dielectric base by minute-pressure electric bridge pedestal (62)
(1) on, the position on the bottom surface of the minute-pressure cantilever beam (61) positioned at the first gap (211) and the second gap (212) is equipped with
Modulated Films (63).
4. low noise MEMS preamplifier parts of utilization high resolution detection of magnetic field according to claim 3, its feature
It is：The minute-pressure cantilever beam (61) is made using piezoelectric crystal material.
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| CN109307850A (en) * | 2018-08-30 | 2019-02-05 | 中国人民解放军国防科技大学 | Magnetic sensor for suppressing low-frequency noise by utilizing magnetic flux electric control and application method thereof |
| CN111624525A (en) * | 2020-05-26 | 2020-09-04 | 中国人民解放军国防科技大学 | Integrated three-axis magnetic sensor for suppressing magnetic noise by utilizing magnetic stress regulation and control |
| CN111624525B (en) * | 2020-05-26 | 2022-06-14 | 中国人民解放军国防科技大学 | Integrated three-axis magnetic sensor for suppressing magnetic noise by utilizing magnetic stress regulation and control |
| CN111885472A (en) * | 2020-06-24 | 2020-11-03 | 歌尔微电子有限公司 | Micro-electro-mechanical system microphone, microphone monomer and electronic equipment |
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