CN106646278B - A kind of low noise MEMS preamplifier part using high resolution detection of magnetic field - Google Patents
A kind of low noise MEMS preamplifier part using high resolution detection of magnetic field Download PDFInfo
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- CN106646278B CN106646278B CN201611128681.5A CN201611128681A CN106646278B CN 106646278 B CN106646278 B CN 106646278B CN 201611128681 A CN201611128681 A CN 201611128681A CN 106646278 B CN106646278 B CN 106646278B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0011—Arrangements or instruments for measuring magnetic variables comprising means, e.g. flux concentrators, flux guides, for guiding or concentrating the magnetic flux, e.g. to the magnetic sensor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
- G01R33/0029—Treating the measured signals, e.g. removing offset or noise
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
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Abstract
The invention discloses a kind of low noise MEMS preamplifier parts using high resolution detection of magnetic field, including dielectric base and magnetic line of force collector, bottom coil is arranged on the bottom surface of the magnetic line of force collector, top layer coil is arranged on the top surface of the magnetic line of force collector, the bottom coil and top layer coil are formed together the current coil being set around on magnetic line of force collector, the magnetic line of force collector is constituted in back-shaped structure and axisymmetricly being arranged by two using the high magnetic conductive part that is formed on a dielectric base of high permeability materials growth, gap is equipped between two high magnetic conductive parts, it is located in the gap in the dielectric base and is equipped with magnetic field sensing element, minute-pressure electric bridge modulation component is equipped with positioned at the top of magnetic field sensing element in the dielectric base.The present invention can be realized the low noise amplification of Ya Nafu rank, have the advantages that magnetic field aggregation amplification effect is good, anti-external magnetic field jamming performance is good, small in size, electricity-magnetic signal high conversion efficiency.
Description
Technical field
The present invention relates to Technique of Weak Signal Detection fields, and in particular to a kind of low noise using high resolution detection of magnetic field
Sound MEMS preamplifier part, the preposition amplification for ultra-weak electronic signal very low frequencies low noise.
Background technique
Low-noise preamplifier has been widely used in all kinds of wireless at present usually as first order amplifying circuit
In electric receiver and high sensitive electronic detecting devices, noise level has been largely fixed entire amplifying circuit or even entire
The Noise Correlation energy of instrument and equipment.Traditional low-noise amplifier normally due to by silicon-based semiconductor in physical mechanism
Limitation, there are apparent 1/f noise characteristics, and frequency is lower, and noise is bigger, lead to the low noise for very low frequencies (< 1Hz) signal
Its noise level of amplifier is extremely difficult to sub- nV magnitude.In the case where much needing to detect extremely low frequency weak signal, it is difficult to reach
To requirement.Such as: electric field detection in ocean can be applied to Marine Geology exploration, Underwater Target Detection, Corrosion monitoring etc., still
Due to seawater conduction, ocean electric field frequency domain is higher, decays faster, and general ocean electric field detection is extremely low frequency weak signal, passes
System amplifier is difficult to meet the needs of ocean electric field detection.
Currently, scientific experiment field it is widely used be Stanford Research company, the U.S. SR560 type low noise
Sound forward voltage amplifier, there are apparent 1/f noise characteristic, break frequencies to exist for the low noise forward voltage amplifier
100Hz or so, typical low frequency background noise are 4nV/ √ Hz@100Hz, 10nV/ √ Hz@10Hz, 40nV/ √ Hz@1Hz.In addition,
The outstanding low noise amplification chip opa211 high frequency treatment noise density of TI company is 1.1nV/ √ Hz, and break frequency is in 100Hz
Left and right, the noise density at 1Hz are 6nV/ √ Hz.In order to reduce low frequency 1/f noise, researchers at home and abroad, which generally use, to be cut
The method of wave modulation.Domestic Qiu's he et al. designs and has developed copped wave preamplifier and be tested, in frequency range
0.001Hz~10kHz, equivalent input noise density are 3.75nV/ √ Hz.German D.Drung et al. is designed and is had developed a
Copped wave low-noise amplifier, equivalent input noise density reach 0.73nV/ √ Hz, and the break frequency of 1/f noise is 3mHz.In order to
Realize Low Frequency Low Noise amplification, patent both domestic and external is also mainly realized by chopping modulation, there is not yet other be based on new principle
Very low frequencies low-noise amplifier research.But the irrational characteristic such as chopper amplifier leads to since clock is routed, charge injection,
Output can have certain residual offset, to affect its performance.As it can be seen that the noise of custom low noise amplifier reaches
1nV/ √ Hz or so is difficult to continue to reduce, and the noise at very low frequencies may be bigger, it is difficult to meet the faint letter of certain very low frequencies
Number measurement demand.Urgently carry out the very low frequencies low-noise preamplifier research based on new principle.
Summary of the invention
The technical problem to be solved in the present invention: in view of the above problems in the prior art, providing one kind can be realized Ya Nafu
The low noise amplification of rank, magnetic field aggregation amplification effect is good, anti-external magnetic field jamming performance is good, small in size, electricity-magnetic signal conversion effect
The high low noise MEMS preamplifier part using high resolution detection of magnetic field of rate.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention are as follows:
A kind of low noise MEMS preamplifier part using high resolution detection of magnetic field, including dielectric base and the magnetic line of force
Collector is arranged with bottom coil on the bottom surface of the magnetic line of force collector, is arranged on the top surface of the magnetic line of force collector
Top layer coil, the magnetic line of force collector are formed in back-shaped structure and by two using high permeability material growth on a dielectric base
High magnetic conductive part axisymmetricly arrange composition, gap is equipped between two high magnetic conductive parts, is located at institute in the dielectric base
It states and is equipped with magnetic field sensing element in gap, the top that magnetic field sensing element is located in the dielectric base is modulated equipped with minute-pressure electric bridge
Component.
Preferably, the magnetic field sensing element is quick by the first TMR sensing element, the 2nd TMR sensing element, the 3rd TMR
The Wheatstone bridge of sensing unit, the 4th TMR sensing element composition, the sensitive member of the first TMR sensing element, the 2nd TMR
The direction in the sensitive magnetic field of part, the 3rd TMR sensing element, the 4th TMR sensing element is consistent, described two high magnetic conductive parts
Between gap include the first gap and the second gap, the first TMR sensing element and the 3rd TMR sensing element are arranged in the
In one gap, the 2nd TMR sensing element and the 4th TMR sensing element are arranged in the second gap.
Preferably, the minute-pressure electric bridge modulation component includes minute-pressure cantilever beam, and the minute-pressure cantilever beam is respectively and set on exhausted
The 7th connection electrode in edge substrate is connected with the 8th connection electrode, and the both ends of the minute-pressure cantilever beam are respectively equipped with minute-pressure electric bridge
Pedestal, the minute-pressure cantilever beam are fixed in dielectric base by minute-pressure electric bridge pedestal, and the bottom surface of the minute-pressure cantilever beam is upper
Modulated Films are equipped in the position in the first gap and the second gap.
Preferably, the minute-pressure cantilever beam is made of piezoelectric crystal material.
The present invention is had an advantage that using the low noise MEMS preamplifier part of high resolution detection of magnetic field
1, the performance indicator of high resolution magnetic field sensor is constantly promoted in recent years, can detect the pole of pT magnitude
Weak magentic-field.Your theorem is cut down according to Biot-Sa, is believed using the magnetic field that high resolution magnetic field sensor detection hot-wire coil is inducted
Number, it can be achieved that indirect measurement and amplification to ultra-weak electronic signal, very low frequencies noise is expected to break through to sub- nV magnitude, compared to tradition
Low noise amplifier circuit is with the obvious advantage, and the present invention includes dielectric base and magnetic line of force collector, on the bottom surface of magnetic line of force collector
Be arranged with bottom coil, be arranged with top layer coil on the top surface of magnetic line of force collector, magnetic line of force collector in back-shaped structure and by
Two are axisymmetricly arranged composition, two high magnetic conductions using the high magnetic conductive part that high permeability material growth is formed on a dielectric base
It is equipped with gap between component, is located in gap in dielectric base and is equipped with magnetic field sensing element, magnetic-field-sensitive is located in dielectric base
The top of element is equipped with minute-pressure electric bridge modulation component, puts before low noise is realized using high resolution magnetic field sensor technology
Greatly, electric signal is efficiently converted into magnetic signal by the structures such as current coil and magnetic line of force collector, then first with magnetic-field-sensitive
Part makes the device have the function of the low noise amplification of Ya Nafu rank (nV grades) to very low frequencies electric signal.
2, magnetic line of force collector of the present invention is in back-shaped structure, so that magnetic field is formed into a loop, can be improved magnetic field aggregation amplification
Effect.
3, magnetic line of force collector of the invention is grown in dielectric base using high permeability material in back-shaped structure and by two
The high magnetic conductive part of upper formation axisymmetricly arranges composition, gap is equipped between two high magnetic conductive parts, using tool there are two between
The symmetrical structure of gap, influence of the external magnetic field to output are cancelled, and reduce influence of the external magnetic field to detection of magnetic field.
4, the high magnetic conductive part that the present invention constitutes magnetic line of force collector is grown on a dielectric base using high permeability material, is adopted
With preparing using MEMS technology, the size of device is reduced, while reducing tested magnetic field position at a distance from current coil,
Improve electricity-magnetic signal transformation efficiency.
Detailed description of the invention
Fig. 1 is the schematic view of the front view of the embodiment of the present invention.
Fig. 2 is the schematic view of the front view that the embodiment of the present invention is free of minute-pressure electric bridge modulation component part.
Fig. 3 is the coil principle structural schematic diagram of the embodiment of the present invention.
Fig. 4 is the wheatstone bridge configuration schematic diagram of the embodiment of the present invention.
Fig. 5 is A-A schematic cross-sectional view in Fig. 1.
Fig. 6 is B-B schematic cross-sectional view in Fig. 1.
Fig. 7 is C-C the schematic diagram of the section structure in Fig. 1.
Marginal data: 1, dielectric base；11, the first connection electrode；14, the first connection electrode (11)~the 4th connection electricity
Pole；15, the 5th connection electrode；16, the 6th connection electrode；17, the 7th connection electrode；18, the 8th connection electrode；2, the magnetic line of force is poly-
Storage；21, high magnetic conductive part；211, the first gap；212, the second gap；3, bottom coil；4, top layer coil；5, magnetic-field-sensitive
Element；51, the first TMR sensing element；52, the 2nd TMR sensing element；53, the 3rd TMR sensing element；54, the 4th TMR is sensitive
Element；6, minute-pressure electric bridge modulation component；61, minute-pressure cantilever beam；62, minute-pressure electric bridge pedestal；63, Modulated Films.
Specific embodiment
As shown in Figure 1, Figure 2 and Figure 3, the preposition amplification of low noise MEMS using high resolution detection of magnetic field of the present embodiment
Device includes dielectric base 1 and magnetic line of force collector 2, and bottom coil 3, the magnetic line of force are arranged on the bottom surface of magnetic line of force collector 2
Top layer coil 4 is arranged on the top surface of collector 2, bottom coil 3 and top layer coil 4, which are formed together, is set around magnetic line of force collector
Current coil on 2, magnetic line of force collector 2 are grown in dielectric base 1 in back-shaped structure and by two using high permeability material
The high magnetic conductive part 21 (21#1 and 21#2) formed axisymmetricly arranges composition, two high magnetic conductive part 21 (21#1 and 21#2) it
Between be equipped with gap, be located in gap in dielectric base 1 and be equipped with magnetic field sensing element 5, positioned at magnetic field sensing element in dielectric base 1
5 top is equipped with minute-pressure electric bridge modulation component 6.In the present embodiment, the high magnetic conductive part 21 of two of magnetic line of force collector 2 is using high
Permeability magnetic material is grown in dielectric base 1, and gap is equipped between two high magnetic conductive part 21, so that 2 structure of magnetic line of force collector
At the back-shaped structure with gap, which is conducive to improve the magnetic field congregational rate of magnetic line of force collector.For placing magnetic field
The gap of sensing element 5 can be arranged in any position of magnetic line of force collector 2, can realize the function of magnetic field aggregation.
In the present embodiment, bottom coil 3 and top layer coil 4 include discontinuous coil metal layer, and bottom coil 3
Coil metal layer, top layer coil 4 coil metal layer between pass sequentially through the metal connecting layer of high 21 side of magnetic conductive part (in figure
Do not draw out) it joins end to end, form the current coil being wound on magnetic line of force collector 2, work of the current coil in pumping signal
Magnetic field can be generated under, which is detected in gap location by magnetic field sensing element 5 by the aggregation amplification of magnetic line of force collector 2.
Referring to as shown in Figure 1, Figure 2 and Fig. 3, current coil that bottom coil 3 and top layer coil 4 are constituted be set to dielectric base 1
On the 5th connection electrode 15 be connected with the 6th connection electrode 16, minute-pressure electric bridge modulation component 6 and in dielectric base 1
Seven connection electrodes 17 are connected with the 8th connection electrode 18.
As shown in figure 4, magnetic field sensing element 5 is by the first TMR sensing element 51, the 2nd TMR sensing element 52, third
The Wheatstone bridge of TMR sensing element 53, the 4th TMR sensing element 54 4 composition, the first TMR sensing element 51, the 2nd TMR
The direction in the sensitive magnetic field of sensing element 52, the 3rd TMR sensing element 53, the 4th TMR sensing element 54 4 is consistent, two height
Gap between magnetic conductive part 21 includes the first gap 211 and the second gap 212, the first TMR sensing element 51 and the 3rd TMR quick
Sensing unit 53 is arranged in the first gap 211, and the 2nd TMR sensing element 52 and the 4th TMR sensing element 54 are arranged between second
In gap 212.Magnetic field sensing element 5 is using quick by four TMR (Tunnel Magneto Resistance, tunnel magneto-resistance effect)
The Wheatstone bridge of sensing unit composition, each TMR sensing element can complete detection of magnetic field, and four TMR sensing elements are quick
The direction for feeling magnetic field is consistent, then the magnetic-field-sensitive that the Wheatstone bridge only generates current coil, insensitive external magnetic field, to drop
Low influence of the external magnetic field to detection of magnetic field improves detection of magnetic field sensitivity compared with traditional detecting element.It needs to illustrate
, magnetic field sensing element 5 is not limited to TMR sensing element and constitutes Wheatstone bridge, as long as the first gap 211 and the can be put into
In two gaps 212 and it can be used to detect the device in magnetic field and can be achieved, it only may be different in detection sensitivity.Ginseng
See Fig. 4, in the present embodiment Wheatstone bridge respectively be set to dielectric base 1 on the first connection electrode 11, the second connection electrode
12, third connection electrode 13, the 4th connection electrode 14 are connected.
As shown in Fig. 5, Fig. 6 and Fig. 7, minute-pressure electric bridge modulation component 6 includes minute-pressure cantilever beam 61, and minute-pressure cantilever beam 61 is distinguished
It is connected with the 7th connection electrode 17 being set in dielectric base 1 with the 8th connection electrode 18, the both ends difference of minute-pressure cantilever beam 61
Equipped with minute-pressure electric bridge pedestal 62, minute-pressure cantilever beam 61 is fixed in dielectric base 1 by minute-pressure electric bridge pedestal 62, minute-pressure cantilever beam
It is located at the first gap 211 and the position in the second gap 212 on 61 bottom surface and is equipped with Modulated Films 63.In the present embodiment, minute-pressure electricity
Bridge modulation component 6 uses the form of minute-pressure cantilever beam, and minute-pressure electric bridge pedestal 62 is bonded in dielectric base 1 by means such as laser
On, 61 both ends of minute-pressure cantilever beam are located on minute-pressure electric bridge pedestal 62, and Modulated Films 63 are located at the lower surface of minute-pressure cantilever beam 61, and just
To gap (the first gap 211 and the second gap 212) present position.Under the excitation of external power supply, minute-pressure cantilever beam 61 is driven
Modulated Films 63 vibrate up and down, so that the magnetic field at gap (the first gap 211 and the second gap 212) is modulated, pass through Modulated Films
63 modulation makes faint ultra low yield point steel high-frequency alternating magnetic field at magnetic field sensing element, effectively overcomes 1/ in extremely low frequency domain
The adverse effect of f noise improves magnetic field resolving power, improves the low-noise performance of preamplifier part.
In the present embodiment, minute-pressure cantilever beam 61 is made of piezoelectric crystal material, and piezoelectric crystal material is in external power supply
Minute-pressure cantilever beam 61 is enabled to vibrate up and down under excitation.In addition, minute-pressure cantilever beam 61 can also using other can drive it is micro-
The material preparation for pressing cantilever beam 61 to vibrate up and down.
The low noise MEMS preamplifier part using high resolution detection of magnetic field of the present embodiment passes through high resolution, low
The magnetic field sensing element 5 of noise measures the magnetic field that hot-wire coil generates, and realizes indirect measurement and amplification to ultra-weak electronic signal, letter
Number it have passed through input voltage Vi→ input current Ii→ it is tested magnetic field B → output voltage VoSeveral processes.Output voltage VoTable
Up to shown in formula such as formula (1)；
In formula (1), RiFor input resistance (i.e. the resistance of current coil), ViFor input voltage, K is the magnetic field of input current
Conversion ratio, S are the sensitivity of magnetic susceptibility unit, and the expression formula of the magnetic field conversion ratio K of input current is K=B/Ii, magnetic susceptibility list
The sensitivity S expression formula of member is S=Vo/ B, B are tested magnetic field, IiFor input current.Therefore before the low noise MEMS of the present embodiment
Shown in the expression formula such as formula (2) for setting the voltage amplification factor A of amplifying device；
In formula (2), K is the magnetic field conversion ratio of input current, and S is the sensitivity of magnetic susceptibility unit, Ri(i.e. for input resistance
The resistance of current coil).
Meanwhile the noise main source and two parts of the low noise MEMS preamplifier part of the present embodiment: input terminal
Current coil thermal noise eNiWith the magnet-sensitive element output noise e of output endNo, the low noise MEMS of the present embodiment is preposition at this time
The output noise e of amplifying deviceoExpression formula such as formula (3) shown in；
In formula (3), A is the voltage amplification factor of the low noise MEMS preamplifier part of the present embodiment, eNiFor input terminal
Current coil thermal noise, eNoFor the magnet-sensitive element output noise of output end.Therefore, the low noise MEMS of the present embodiment is preposition
The equivalent input noise e of amplifying deviceiExpression formula such as formula (4) shown in；
In formula (4), eoFor the output noise of the low noise MEMS preamplifier part of the present embodiment, A is the present embodiment
The voltage amplification factor of low noise MEMS preamplifier part, eNiFor the current coil thermal noise of input terminal, eNoFor output end
Magnet-sensitive element output noise, K are the magnetic field conversion ratio of input current, and S is the sensitivity of magnetic susceptibility unit, RiFor input resistance
(i.e. the resistance of current coil), k are Boltzmann constant, k=1.38 × 10-23J/K, T are absolute temperature.So to reduce
The equivalent input noise of the low noise MEMS preamplifier part of the present embodiment, needs to reduce the resistance R of current coili, increase
Input current magnetic field conversion ratio K, sensing element output noise eNo, magnetic susceptibility unit sensitivity S.In actual operation, pass through
Control the thickness of current coil, the resistance R of current coiliIt can reach 10 ohm or less；By rationally designing magnetic line of force collector 2
Structure, input current magnetic field conversion ratio can reach 1nT/nA or so；And the magnetic-field-sensitive member prepared at present by TMR sensing element
The magnetic field sensitivity of part 5 can reach 200-400mV/mT, and output noise reaches 4-10nV/ √ Hz or so, can calculate equivalent defeated
Noise is 0.4-0.7nV/ √ Hz or so out.Meanwhile with the high speed development of MEMS technology and Magnetic Measurement Technology, can continue to improve
The noiseproof feature of the device.
In conclusion the low noise MEMS preamplifier part of the present embodiment is by using the sensitive member of highly sensitive TMR
The soft magnetisms micro-structures such as part and magnetic line of force collector 2, so that the present embodiment has the low noise of Ya Nafu rank to very low frequencies electric signal
Sound enlarging function；And the magnetic field that the present embodiment is generated using highly sensitive, low noise TMR sensing element probe current, lead to
The modulation of toning film 63 makes faint ultra low yield point steel high-frequency alternating magnetic field at magnetic field sensing element 5, so that very low frequencies are believed
Number it is modulated to high-frequency signal in amplification process, effectively overcomes the adverse effect of 1/f noise in extremely low frequency domain；The present embodiment
Magnetic line of force collector 2 use symmetrical structure, improving sensitivity again reduces influence of the external magnetic field to gallon.
The above is only a preferred embodiment of the present invention, protection scope of the present invention is not limited merely to above-mentioned implementation
Example, all technical solutions belonged under thinking of the present invention all belong to the scope of protection of the present invention.It should be pointed out that for the art
Those of ordinary skill for, several improvements and modifications without departing from the principles of the present invention, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (4)
1. a kind of low noise MEMS preamplifier part using high resolution detection of magnetic field, it is characterised in that: including the base that insulate
Bottom (1) and magnetic line of force collector (2) are arranged with bottom coil (3), the magnetic force on the bottom surface of the magnetic line of force collector (2)
It is arranged on the top surface of line collector (2) top layer coil (4), the bottom coil (3) and top layer coil (4) are formed together winding
Current coil on magnetic line of force collector (2), the magnetic line of force collector (2) use high magnetic conduction in back-shaped structure and by two
The high magnetic conductive part (21) that Material growth is formed on dielectric base (1) axisymmetricly arranges composition, two high magnetic conductive parts
(21) it is equipped with gap between, is located in the gap on the dielectric base (1) and is equipped with magnetic field sensing element (5), the insulation
Top in substrate (1) positioned at magnetic field sensing element (5) is equipped with minute-pressure electric bridge modulation component (6).
2. the low noise MEMS preamplifier part according to claim 1 using high resolution detection of magnetic field, feature
Be: the magnetic field sensing element (5) is quick by the first TMR sensing element (51), the 2nd TMR sensing element (52), the 3rd TMR
The Wheatstone bridge of sensing unit (53), the 4th TMR sensing element (54) four composition, the first TMR sensing element (51), the
The direction in the sensitive magnetic field of two TMR sensing elements (52), the 3rd TMR sensing element (53), the 4th TMR sensing element (54) four
Unanimously, the gap between described two high magnetic conductive parts (21) includes the first gap (211) and the second gap (212), and described the
One TMR sensing element (51) and the 3rd TMR sensing element (53) are arranged in the first gap (211), the sensitive member of the 2nd TMR
Part (52) and the 4th TMR sensing element (54) are arranged in the second gap (212).
3. the low noise MEMS preamplifier part according to claim 1 using high resolution detection of magnetic field, feature
Be: the minute-pressure electric bridge modulation component (6) includes minute-pressure cantilever beam (61), and the minute-pressure cantilever beam (61) is respectively and set on exhausted
The 7th connection electrode (17) in edge substrate (1) is connected with the 8th connection electrode (18), the both ends of the minute-pressure cantilever beam (61)
It is respectively equipped with minute-pressure electric bridge pedestal (62), the minute-pressure cantilever beam (61) is fixed on dielectric base by minute-pressure electric bridge pedestal (62)
(1) on, the position on the bottom surface of the minute-pressure cantilever beam (61) positioned at the first gap (211) and the second gap (212) is equipped with
Modulated Films (63).
4. the low noise MEMS preamplifier part according to claim 3 using high resolution detection of magnetic field, feature
Be: the minute-pressure cantilever beam (61) is made of piezoelectric crystal material.
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| CN111624525B (en) * | 2020-05-26 | 2022-06-14 | 中国人民解放军国防科技大学 | Integrated three-axis magnetic sensor for suppressing magnetic noise by utilizing magnetic stress regulation and control |
| CN111885472B (en) * | 2020-06-24 | 2021-12-31 | 歌尔微电子有限公司 | Micro-electro-mechanical system microphone, microphone monomer and electronic equipment |
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