CN209605842U - A kind of magneto-resistor inertial sensor chip - Google Patents
A kind of magneto-resistor inertial sensor chip Download PDFInfo
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- CN209605842U CN209605842U CN201920437962.1U CN201920437962U CN209605842U CN 209605842 U CN209605842 U CN 209605842U CN 201920437962 U CN201920437962 U CN 201920437962U CN 209605842 U CN209605842 U CN 209605842U
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Abstract
The utility model discloses a kind of magneto-resistor inertial sensor chip, including substrate, vibration diaphragm, induction magneto-resistor, at least one permanent magnetic thin film, vibration diaphragm is covered on a side surface of substrate, induction magneto-resistor and permanent magnetic thin film are set to surface of the vibration diaphragm far from substrate, it is additionally provided with contact electrode far from the surface of substrate in vibration diaphragm, induction magneto-resistor is connect by connecting lead wire with contact electrode；Substrate includes the cavity that etching is formed, and incudes one of magneto-resistor and permanent magnetic thin film or is all set to cavity in the upright projection region of vibration diaphragm.The magnetic field that the permanent magnetic thin film of the utility model magneto-resistor inertial sensor chip generates generates variation in the sensitive direction component of induction magneto-resistor, and the resistance value for incuding magneto-resistor is made to generate variation, causes output change in electric.The utility model utilizes the high sensitivity and high frequency sound characteristic of magneto-resistor, improves output signal strength and frequency response, is conducive to the detection of faint pressure, vibration or acceleration and high-frequency vibration.
Description
Technical field
The utility model relates to magnetic sensor field, in particular to a kind of magneto-resistor inertial sensor chip.
Background technique
In recent years, it for measuring acceleration, vibrates, the inertial sensor chip of pressure is closed extensively in every field
Note.Wherein oscillation sensor field can be subdivided into solid vibration detection, including building vibration, mechanical oscillation again；Liquid vibration inspection
It surveys, including water listens sonar；And Gas Vibration, the fields such as including microphone applications.Existing inertial sensor chip, main base
In silica-based condenser type, piezo-electric type, the principles such as silicon substrate resistance pressure type, by acceleration, vibration, pressure waits ergometry physical quantity to be converted to
Voltage or current signal are measured.Wherein silica-based condenser type temperature is moderately good, and sensitivity is higher, and temperature stability is preferable,
But response band is relatively narrow；Piezo-electric type temperature stability and time stability are outstanding, and the range of linearity is wide, but sensitivity is lower；Silicon substrate
Resistance pressure type high sensitivity, dynamic response is big, can measure slight pressure, but temperature stability is poor；Furthermore above-mentioned technology is being directed to
The detection of 20MHz frequencies above vibration signal is essentially blind area.
Magnetic resistance material, specifically comprising with pinning layer, free layer, non-magnetic tunnel barrier layer structure tunnel knot
Magneto-resistor (TMR) has the giant magnetoresistance (GMR) of pinning layer, free layer, nonmagnetic conductive spacer layer configuration, and has magnetic
The anisotropic magneto-resistor (AMR) of anisotropic band structure.Magnetic resistance material has outstanding frequency as field sensing component
Response characteristic, good temperature characterisitic and high sensitivity can be used in conjunction with suitable mechanics transferring structure and excitation structure
In specific inertia parameter identification.However, excitation structure and magnetoresistive element adhere to space Different Plane separately in inertia parameter identification
Design, in addition to it can simplify the advantage of part of production, it is not high to will cause overall yield, measurement linearly interval reduction, mechanics biography
It is limited to pass structure, excitation structure, the adjustment of magnetoresistive element relative tertiary location, then to cause adjusting performance limited etc. many not
Foot.
Utility model content
Faint pressure and high-frequency vibration detection weak output signal can not even be detected for current acceleration transducer
Status, the utility model is based on itself resistance value of TMR/GMR/AMR magnetic resistance material for the spy of external magnetic field variation quick response
Property and the outstanding temperature characterisitic of TMR/GMR/AMR itself in conjunction with magnetic or non magnetic vibration diaphragm propose that one kind can be surveyed
Measure small high-frequency vibration, the magneto-resistor inertial sensor chip of the highly sensitive high frequency measurement of pressure or acceleration signal, the magnetic
Signal emitting-source permanent magnetic thin film is received source magneto-resistor with signal and set by resistance inertial sensor chip using magneto-resistor as sensitive material
It is placed in same level, maximizes linearly section, is become using magneto-resistor resistance value caused by permanent magnetic thin film changes of magnetic field
Change, mechanical movement is converted into electric signal, to accurately obtain vibration, acceleration or pressure signal to be measured.
The utility model is realized according to following technical scheme:
A kind of magneto-resistor inertial sensor chip, which is characterized in that including substrate, vibration diaphragm, induction magneto-resistor, at least
One permanent magnetic thin film, in which:
The vibration diaphragm is covered on a side surface of the substrate, the induction magneto-resistor and permanent magnetic thin film setting
In surface of the vibration diaphragm far from the substrate, contact is additionally provided with far from the surface of the substrate in the vibration diaphragm
Electrode, the induction magneto-resistor are connect by connecting lead wire with the contact electrode；
The substrate includes the cavity that etching is formed, and one of the induction magneto-resistor and the permanent magnetic thin film or whole are set
The cavity is placed in the upright projection region of the vibration diaphragm, the magnetic field that the permanent magnetic thin film generates is in the induction magnetic
The sensitive direction component of resistance generates variation, and the resistance value of the induction magneto-resistor is made to generate variation, to cause output telecommunications
Number variation.
Preferably, the induction magneto-resistor is set to the cavity other than the upright projection region of the vibration diaphragm
Region, the permanent magnetic thin film are set to the cavity in the medium position in the upright projection region of the vibration diaphragm, or
The induction magneto-resistor is set to inside edge of the cavity in the upright projection region of the vibration diaphragm, institute
It states permanent magnetic thin film and is set to the medium position that the cavity has region in the upright projection of the vibration diaphragm, or
The induction magneto-resistor is set to the medium position in upright projection region of the cavity in the vibration diaphragm, institute
It states permanent magnetic thin film and is set to the cavity in the upright projection region of the vibration diaphragm with exterior domain.
It preferably, further include referring to magneto-resistor, it is described to be located at the vibration diaphragm far from the substrate with reference to magneto-resistor
Surface, and be set to the cavity in the upright projection region of the vibration diaphragm with exterior domain, it is described with reference to magneto-resistor and
The induction magneto-resistor is connected as full-bridge or half-bridge structure by package lead.
Preferably, described that the side of the vibration diaphragm is provided with the magnetic screen comprising soft magnetic materials with reference to magneto-resistor
Layer, the magnetic masking layer covering is described to refer to magneto-resistor.
Preferably, the reference magneto-resistor and the induction magneto-resistor are tunnel knot magnetic resistance, giant magnetoresistance or anisotropic magnetic
Resistance.
It preferably, further include encapsulating structure, the encapsulating structure is made of package substrate and package casing, the substrate position
In in the cavity being made of the package substrate and the package casing, and it is fixed on the package substrate.
Preferably, the package casing includes one or more layers magnetic field shielding shell being made of soft magnetic materials, Huo Zheyi
Layer or the electric field shielding shell that is made of metal foil of multilayer or by the magnetic field shielding shell and the electric field shielding shell heap
The folded shell constituted.
Preferably, the package substrate or the package casing are provided at least one aperture.
Preferably, the vibration diaphragm with a thickness of 0.001 μm~1000 μm, the cavity connects with the vibration diaphragm
Contacting surface edge is that round, oval, rectangle or parallelogram, the cavity are circumscribed with the contact surface of the vibration diaphragm
The range of rectangular aspect ratio is 20:1~1:1, wherein the wide range of the circumscribed rectangle of the contact surface is 0.1 μm~2000 μm.
Preferably, the vibration diaphragm includes the through-hole that multiple etchings are formed.
Preferably, the permanent magnetic thin film is one or more layers hard magnetic material, or is made of soft magnetic materials and antiferromagnet
Recombiner unit constitutes soft magnetism and antiferromagnetic n-layer alternatively layered structure, or forms compound list by soft magnetic materials and Hard Magnetic magnetic material
Member constitutes the n-layer alternatively layered structure of soft magnetism and Hard Magnetic, and wherein n is natural number, and hard magnetic material includes CoPt, CoCrPt, FePt
At least one of, soft magnetic materials includes at least one of FeCo, NiFe, antiferromagnet include in PtMn, IrMn extremely
Few one kind.
Preferably, the permanent magnetic thin film magnetizing direction is described in permanent magnetic thin film plane or perpendicular to permanent magnetic thin film plane
Magneto-resistor sensitive direction is incuded in permanent magnetic thin film plane or perpendicular to permanent magnetic thin film plane.
Preferably, the sensor chip includes feedback coil；
Feedback coil is planar etch coil, and the planar etch coil is located at the separate substrate of the vibration diaphragm
The surface of side, and the cavity is set in the upright projection region of the vibration diaphragm with exterior domain,
Or the feedback coil is coiled wire-wound coil, the coiled wire-wound coil is located at the surface of the permanent magnetic thin film, or
Positioned at the permanent magnetic thin film underface and be arranged in lower section or the cavity of the cavity.
Compared with prior art, the utility model has following advantageous effects:
The utility model using vibration diaphragm conduction ambient pressure, vibration or the variation of acceleration, use magneto-resistor as
Vibration diaphragm mechanical movement is converted to magneto-resistor change in resistance, by magnetoresistive element and as excitation structure by sensitive material
Permanent magnetic thin film is set to the same surface of vibration diaphragm, and magnetoresistive element and permanent magnetic thin film is made to be located at same datum plane, convenient
Mechanics transferring structure vibration diaphragm, excitation structure permanent magnetic thin film, the adjustment of magnetoresistive element relative tertiary location, are conducive to sensor
The raising of output signal linearity section and sensor yield；Using the high sensitivity and high frequency sound characteristic of magneto-resistor, improve defeated
Signal strength and frequency response out are conducive to the detection of faint pressure, vibration or acceleration and high-frequency vibration.
Detailed description of the invention
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, other spies of the utility model
Sign, objects and advantages will become more apparent upon:
Fig. 1 is a kind of top view of magneto-resistor inertial sensor chip provided by the embodiment of the utility model；
Fig. 2 a is a kind of cross-sectional view of magneto-resistor inertial sensor chip provided by the embodiment of the utility model；
Fig. 2 b is the cross-sectional view of another magneto-resistor inertial sensor chip provided by the embodiment of the utility model；
Fig. 3 is the top view of another magneto-resistor inertial sensor chip provided by the embodiment of the utility model；
Fig. 4 is the cross-sectional view of another magneto-resistor inertial sensor chip provided by the embodiment of the utility model；
Fig. 5 a is the structural schematic diagram of another magneto-resistor inertial sensor provided by the embodiment of the utility model；
Fig. 5 b is the structural schematic diagram of another magneto-resistor inertial sensor provided by the embodiment of the utility model；
Fig. 5 c is the structural schematic diagram of another magneto-resistor inertial sensor provided by the embodiment of the utility model；
Fig. 6 a is the top view of another magneto-resistor inertial sensor chip provided by the embodiment of the utility model；
Fig. 6 b is the top view of another magneto-resistor inertial sensor chip provided by the embodiment of the utility model；
Fig. 7 a is the top view of another magneto-resistor inertial sensor chip provided by the embodiment of the utility model；
Fig. 7 b is the top view of another magneto-resistor inertial sensor chip provided by the embodiment of the utility model；
Fig. 7 c is the cross-sectional view of another magneto-resistor inertial sensor chip provided by the embodiment of the utility model；
Fig. 8 a and Fig. 8 b are the vertical view of other two kinds of magneto-resistors inertial sensor chip provided by the embodiment of the utility model
Figure；
Fig. 9 a- Fig. 9 b is the vertical view of other two kinds of magneto-resistors inertial sensor chip provided by the embodiment of the utility model
Figure；
Figure 10 a is the top view of another magneto-resistor inertial sensor chip provided by the embodiment of the utility model；
Figure 11 a- Figure 11 d is magneto-resistor bridge connected mode schematic diagram provided by the embodiment of the utility model；
Figure 12 is the top view of another magneto-resistor inertial sensor chip provided by the embodiment of the utility model；
Figure 13 a- Figure 13 c is the structure of other three kinds of magneto-resistors inertial sensor chip provided by the embodiment of the utility model
Schematic diagram；
Figure 14 a- Figure 14 f is respectively permanent magnet film material typical set-up schematic diagram.
Specific embodiment
The utility model is described in detail combined with specific embodiments below.Following embodiment will be helpful to this field
Technical staff further understands the utility model, but does not limit the utility model in any form.It should be pointed out that ability
For the those of ordinary skill in domain, without departing from the concept of the premise utility, several changes and improvements can also be made.
These are all within the protection scope of the present invention.
In the description of the present invention, it should be understood that term " radial direction ", " axial direction ", "upper", "lower", "top",
The orientation or positional relationship of the instructions such as "bottom", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, merely to just
In description the utility model and simplify description, rather than the device or element of indication or suggestion meaning there must be specific side
Position is constructed and operated in a specific orientation, therefore should not be understood as limiting the present invention.In the description of the utility model
In, unless otherwise indicated, the meaning of " plurality " is two or more.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " is pacified
Dress ", " setting ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integrally
Connection；It can be directly connected, it can also be indirectly connected through an intermediary.For the ordinary skill in the art,
The concrete meaning of above-mentioned term in the present invention can be understood as the case may be.
In the prior art, not in same plane, the two is for the permanent magnetic thin film of magneto-resistor inertial sensor and induction magneto-resistor
Up-down structure limits the adjustment of opposite upper and lower position, and because of the linear property of output signal because vibrational structure material limits to
It is required that limiting the adjustment of relative horizontal position, as a result it is very limited design structure.
Based on the above issues, the utility model embodiment provides a kind of magneto-resistor inertial sensor chip.Fig. 1 is this
A kind of top view for magneto-resistor inertial sensor chip that utility model embodiment provides, Fig. 2 a is that the utility model embodiment mentions
Supply a kind of magneto-resistor inertial sensor chip cross-sectional view, Fig. 2 a can corresponding diagram 1 along the direction hatching A-A ' cross-sectional view；Figure
2b is the cross-sectional view of another magneto-resistor inertial sensor chip provided by the embodiment of the utility model, and Fig. 2 b can 1 edge of corresponding diagram
The cross-sectional view in the direction hatching B-B '；With reference to Fig. 1, Fig. 2 a and Fig. 2 b, magneto-resistor inertial sensor chip includes substrate 101, vibration
Dynamic diaphragm (wherein, respective figure label 102 ' in Fig. 1, Fig. 2 a and Fig. 2 b in respective figure label 102), induction magneto-resistor 105,
At least one permanent magnetic thin film 108.Substrate 101 is one of monocrystalline silicon, metal, ceramics, and vibration diaphragm is covered on substrate 101
Upper surface, incudes magneto-resistor 105 and permanent magnetic thin film 108 is set to the upper surface of vibration diaphragm.Optionally, the upper table of vibration diaphragm
Face and lower surface are plane.Contact electrode 106 is set in vibration diaphragm upper surface, induction magneto-resistor 105 passes through connecting lead wire 104
It is connect with contact electrode 106, substrate 101 includes cavity 103, and hollow cavity 103 can be by performing etching substrate 101
It arrives.Cavity 103 is located on the downside of vibration diaphragm, incudes one of magneto-resistor 105 and permanent magnetic thin film 108 or is all set to cavity
103 in the upright projection region of vibration diaphragm 102, when permanent magnetic thin film 108 and the induction generation relative displacement of magneto-resistor 105,
The magnetic field that permanent magnetic thin film 108 generates generates variation in the sensitive direction component of induction magneto-resistor 105, makes to incude magneto-resistor 105
Resistance value generate variation, thus cause output change in electric.It should be noted that only showing in Fig. 1 to keep attached drawing clearer
The vibration diaphragm 102 ' with cavity corresponding part is gone out, Fig. 2 a and Fig. 2 b show entire vibration diaphragm 102.Following embodiment
In also represented and the vibration diaphragm of cavity corresponding part with appended drawing reference 102 '.
In the utility model embodiment, permanent magnetic thin film 108 is used as excitation structure, is set to vibration with induction magneto-resistor 105
The same surface of dynamic diaphragm, so that permanent magnetic thin film 108 and induction magneto-resistor 105 are in same datum plane, because of permanent magnetic thin film 108
Linearly is influenced less with induction magneto-resistor 105, therefore compared to traditional magneto-resistor inertia sensing
Device chip, can make magneto-resistor inertial sensor chip structure design it is more diversified, facilitate mechanics transferring structure vibration every
Film, excitation structure permanent magnetic thin film, the adjustment of magnetoresistive element relative tertiary location.
It should be noted that only schematically show permanent magnetic thin film 108 is set to vibration diaphragm medium position to Fig. 1, feel
Magneto-resistor 105 is answered to be set to cavity 103 the case where the upright projection region of vibration diaphragm is with exterior domain, the utility model is real
Example is applied to be not specifically limited induction magneto-resistor 105 and the position of permanent magnetic thin film 108, if satisfaction answer magneto-resistor 105 with forever
One of magnetic thin film 108 is all set to cavity 103 in the upright projection band of position of vibration diaphragm.
Magneto-resistor inertial sensor chip provided in this embodiment, by conducting ambient pressure, vibration using vibration diaphragm
Or the variation of acceleration, use magneto-resistor as sensitive material, vibration diaphragm mechanical movement be converted into magneto-resistor change in resistance,
Magnetoresistive element and the permanent magnetic thin film as excitation structure are set to the same surface of vibration diaphragm, make magnetoresistive element and forever
Magnetic thin film is located at same datum plane, facilitates mechanics transferring structure vibration diaphragm, excitation structure permanent magnetic thin film, magnetoresistive element phase
To spatial position adjustment, be conducive to the raising in sensor output signal linearity section and sensor yield；Utilize magneto-resistor
Highly sensitive and high frequency sound characteristic improves output signal strength and frequency response, be conducive to faint pressure, vibration or acceleration and
The detection of high-frequency vibration.
The magneto-resistor sensitive to permanent magnetic thin film changes of magnetic field is induction magneto-resistor, insensitive to permanent magnetic thin film changes of magnetic field
Magneto-resistor is with reference to magneto-resistor, and setting is spaced apart with reference to magneto-resistor and permanent magnetic thin film part, and then weakens permanent magnetic thin film magnetic
Influence of the field to reference magneto-resistor covers the magnetic masking layer 107 being made of soft magnetic materials in reference magneto-resistor and eliminates when necessary
Magnetic field influences, and guarantees to stablize with reference to magneto-resistor resistance value.
Fig. 3 is the top view of another magneto-resistor inertial sensor chip provided by the embodiment of the utility model, and Fig. 4 is
The cross-sectional view of another kind magneto-resistor inertial sensor chip provided by the embodiment of the utility model, Fig. 4 can corresponding diagram 3 along hatching
The cross-sectional view in the direction C-C '.With reference to Fig. 3 and Fig. 4, the sensor chip of the utility model further includes with reference to magneto-resistor 109, reference
Magneto-resistor 109 is located at the upper surface of vibration diaphragm, and is set to cavity 103 in the upright projection region of vibration diaphragm with outskirt
Domain, the reference magneto-resistor 109 and induction magneto-resistor 105 of the utility model are connected as full-bridge or half-bridge structure by package lead,
Or the structure of single armed is separately formed by induction magneto-resistor.
It include the magnetic masking layer 107 of soft magnetic materials with reference to one layer of covering above magneto-resistor 109 with continued reference to Fig. 3 and Fig. 4,
And then influence of the changes of magnetic field of the shielding generation of permanent magnetic thin film 108 to the resistance value of reference magneto-resistor 109.
A specific embodiment according to the present utility model, the reference magneto-resistor 109 and induction magneto-resistor of the utility model
105 are adopted as tunnel knot magnetic resistance, giant magnetoresistance or anisotropic magnetoresistive.
The utility model permanent magnetic thin film magnetizing direction incudes magnetic in permanent magnetic thin film plane or perpendicular to permanent magnetic thin film plane
Resistance sensitivity direction is in permanent magnetic thin film plane or perpendicular to permanent magnetic thin film plane.As shown in connection with fig. 4, according to the utility model
A specific embodiment, the induction magneto-resistor sensitive direction of the utility model is arranged along the direction Y, while permanent magnetic thin film is along Z
Direction is magnetized, and magneto-resistor is used to detect when ambient pressure, vibration or acceleration cause permanent magnetic thin film to be subjected to displacement along Z-direction,
The component of magneto-resistor position magnetic field in the Y direction detects pressure/vibration/acceleration by determining change in displacement.Magneto-resistor is sensitive
Spend direction and permanent magnetic thin film magnetizing direction can in perpendicular to vibration diaphragm in-plane or diaphragm plane any direction.
Fig. 5 a is the structural schematic diagram of another magneto-resistor inertial sensor provided by the embodiment of the utility model, and Fig. 5 b is
The structural schematic diagram of another kind magneto-resistor inertial sensor provided by the embodiment of the utility model, Fig. 5 c are the utility model realities
The structural schematic diagram of another magneto-resistor inertial sensor of example offer is provided.With reference to shown in Fig. 5 a-5c, according to the utility model
Specific embodiment, the sensor chip of the utility model further includes encapsulating structure, and encapsulating structure is by package substrate 202 and envelope
Casing 201 is constituted, and substrate 101 is located in the cavity being made of the package substrate 202 and the package casing 201, and solid
It is scheduled on the package substrate 202.
Settable one or more aperture 203 on encapsulating structure, for transmitting ambient pressure or vibration.When needing to transmit sound
When wave vibrates (such as microphone) or liquid/gas pressure, packaging body aperture is needed, liquid/gas is allowed to touch chip.Measurement
Acceleration does not need aperture.Specific embodiment according to the present utility model, can be according to the needs of practical application in encapsulation base
One or more apertures 203 are arranged in plate 202 or package casing 201, and according to Fig. 5 a- Fig. 5 c, wherein Fig. 5 a is no aperture
Encapsulating structure, Fig. 5 b are that aperture is located on package casing, and Fig. 5 c is that aperture is located on package substrate.
In addition, the magnetic field shielding shell that the package casing 201 of the utility model is made of using one or more layers soft magnetic materials
Body or one or more layers electric field shielding shell being made of metal foil or by the magnetic field shielding shell and the electric field screen
It covers shell and stacks the shell constituted, can be selected according to actual needs.
Fig. 6 a is the top view of another magneto-resistor inertial sensor chip provided by the embodiment of the utility model, and Fig. 6 b is
The top view of another kind magneto-resistor inertial sensor chip provided by the embodiment of the utility model.Fig. 1, Fig. 6 a and Fig. 6 b are this reality
With novel three kinds typical tunnel knot magnetic resistance inertial sensor top views.It is wherein induction magneto-resistor string along the arrangement of the direction X R1, R3,
R2, R4 are to draw signal by contact electrode 106 with reference to magneto-resistor string.Such as Fig. 1 and Fig. 6 a, vibration diaphragm central part can be set
Set permanent magnetic thin film, magnetizing direction vertically with permanent magnetism membrane surface or be parallel to any pair of permanent magnetism diaphragm edge.As Fig. 6 a incudes magnetic
Resistance, which can be located at, can be located at cavity in vibration diaphragm with exterior domain or Fig. 1 magneto-resistor in the upright projection region of vibration diaphragm
Upright projection region in inside edge region.Vibration diaphragm receives extraneous vibration/acceleration/pressure influence, drives permanent magnetism thin
Film causes change of magnetic field strength at magneto-resistor, along moving perpendicular to diaphragm direction so as to cause magneto-resistor change in resistance.Or as schemed
6b magneto-resistor is set to central part within cavity projection, and permanent magnetic thin film is set to cavity in the upright projection region of vibration diaphragm
In addition, diaphragm receives extraneous vibration/acceleration/pressure influence, along being moved perpendicular to diaphragm direction, cause on diaphragm magneto-resistor with
Permanent magnetic thin film relative displacement, so that change of magnetic field strength at magneto-resistor, so as to cause magneto-resistor change in resistance.
With reference to attached drawing 4, magneto-resistor R2, R4 is referred to external position setting in cavity, it is thin not by permanent magnetism with reference to magneto-resistor
Film, which generates magnetic field, to be influenced, and is generated when displacement causes changes of magnetic field in permanent magnetic thin film and is kept resistance value constant, with reference to can in magneto-resistor
Magnetic masking layer is covered to reduce the influence of changes of magnetic field.When application scenarios need, R1, R3 be coupled be full-bridge or half-bridge form,
Vibration is changed into electric signal output.When acceleration calculation, when R1, R3 constitute a branch, R2, R4 constitute a branch, build
When for full-bridge, if acceleration causes permanent magnetic thin film to be displaced, the constituted branch resistance of R1, R3 is caused to increase, the constituted branch of R2, R4
Resistance is constant, and full-bridge voltage signal becomes certain positive value from zero to get the changes of magnetic field amount at R1, R3 branch, is displaced by magnetic field
Relationship, it is counter to push away permanent magnetic thin film displacement, in conjunction with the time for causing the displacement, acceleration can be obtained.
Fig. 7 a is the top view of another magneto-resistor inertial sensor chip provided by the embodiment of the utility model；Fig. 7 b is
The top view of another kind magneto-resistor inertial sensor chip provided by the embodiment of the utility model；Fig. 7 c is that the utility model is real
The cross-sectional view of another magneto-resistor inertial sensor chip of example offer is provided.With reference to Fig. 7 a- Fig. 7 c, vibration diaphragm 102 is etched with
Multiple through-holes 110, to improve vibration transmission efficiency.Through-hole 110 projects and magneto-resistor and its lead, electricity on vibration diaphragm
Polar projection is non-overlapping, since aperture is after setting magneto-resistor and conducting wire, otherwise causes magneto-resistor and conducting wire region can not
Aperture is set, and otherwise magneto-resistor and conducting wire will be struck off.
Fig. 8 a and Fig. 8 b are the vertical view of other two kinds of magneto-resistors inertial sensor chip provided by the embodiment of the utility model
Figure；Fig. 9 a and Fig. 9 b are the top view of other two kinds of magneto-resistors inertial sensor chip provided by the embodiment of the utility model；Ginseng
It examines shown in Fig. 8 a- Fig. 8 b and Fig. 9 a- Fig. 9 b, bows for the utility model typical case anisotropic magnetic resistance/giant magnetoresistance inertial sensor
View.Magneto-resistor is strip or snakelike arrangement, and draws magneto-resistor variable signal by electrode.Vibration diaphragm central part is settable
Permanent magnetic thin film, magnetizing direction vertically with membrane surface or be parallel to any pair of diaphragm edge.Diaphragm receives extraneous vibration/acceleration
Degree/pressure influence drives permanent magnetic thin film along moving perpendicular to diaphragm direction, change of magnetic field strength at magneto-resistor is caused, to draw
The variation of magnetize resistance.Or magneto-resistor is set to central part within cavity projection, permanent magnetic thin film is set to cavity and exists
Other than the upright projection region of vibration diaphragm, diaphragm receives extraneous vibration/acceleration/pressure influence, along perpendicular to diaphragm direction
Movement causes magneto-resistor and permanent magnetic thin film relative displacement on diaphragm, so that change of magnetic field strength at magneto-resistor, so as to cause magnetoelectricity
Hinder change in resistance.Meanwhile magneto-resistor R2, R4 is referred to external position setting in cavity, it is not generated by permanent magnetic thin film with reference to magneto-resistor
Magnetic field influences, and keeps resistance value constant when vibration diaphragm generates vibration, when necessary, with reference to magnetic settable above magneto-resistor R2, R4
Shielded layer.When application scenarios need, reference resistance R2, R4 and induction magneto-resistor R1, it is with reference to full-bridge or with reference to half that R3, which is coupled,
Vibration is changed into electric signal output by bridge form.
Figure 10 a is the top view of another magneto-resistor inertial sensor chip provided by the embodiment of the utility model.Vibration
The thickness of dynamic diaphragm may be selected to be 0.001 μm~1000 μm, the contact surface edge of cavity and vibration diaphragm be round, ellipse,
The range of the circumscribed rectangular aspect ratio of the contact surface of rectangle or parallelogram, cavity and vibration diaphragm is 20:1~1:1,
Described in the wide range of circumscribed rectangle of contact surface be 0.1 μm~2000 μm.It is according to the present utility model specific with reference to Figure 10 a
When the contact surface edge of embodiment, cavity and vibration diaphragm is circular structure, magneto-resistor and permanent magnetic thin film are arranged with arc and are distinguished
It is consistent in the case where being set to inside and out cavity projection, working principle and bind mode and rectangle diaphragm design.With reference to
Magneto-resistor R2, R4 is upper can to cover magnetic masking layer.
Figure 11 a- Figure 11 d is magneto-resistor bridge connected mode schematic diagram provided by the embodiment of the utility model.With reference to figure
11a- Figure 11 d in magneto-resistor inertial sensor chip, incudes magneto-resistor and includes with reference to complete with reference to the bind mode of magneto-resistor
Bridge, with reference to half-bridge, recommend half-bridge, or single arm structure is separately formed by induction magneto-resistor.
The top view of Figure 12 another magneto-resistor inertial sensor chip provided by the embodiment of the utility model；Figure 13 a-
Figure 13 c is the structural schematic diagram of other three kinds of magneto-resistors inertial sensor chip provided by the embodiment of the utility model.With reference to figure
12 and Figure 13 a- Figure 13 c, sensor chip settable feedback coil cause magneto-resistor when being subjected to displacement permanent magnetic thin film 108
Variation, so that the variation of bring voltage/current after circuit amplifies, loads on feedback coil and generates and changes with permanent magnetic thin film 108
Equal, contrary magnetic field, so that vibration diaphragm is located at, equalization point attachment is mobile, to increase the measurement dynamic of inertial sensor
Range.
Wherein as shown in figure 12, planar etch coil 111, planar etch line can be set in magneto-resistor inertial sensor chip
Circle 111 can be formed by planar etching process, and planar etch coil 111 is located at the upper surface of the vibration diaphragm, and is set to
The cavity is with the contact surface upright projection region of the vibration diaphragm with exterior domain.
As shown in Figure 13 a- Figure 13 c, coiled wire-wound coil 112 is can be set in sensor chip, with reference to 109 top of magneto-resistor
Magnetic masking layer 107 can be covered.Coiled wire-wound coil 112 is located at the surface of permanent magnetic thin film 108, or is located at the permanent magnetic thin film 108
Underface and be arranged in lower section or the cavity 103 of the cavity 103.
Permanent magnetic thin film can be one or more layers hard magnetic material, typical material CoPt, CoCrPt, FePt, or by soft magnetism
Material and antiferromagnet composition recombiner unit constitute soft magnetism and antiferromagnetic n-layer alternatively layered structure, or by soft magnetic materials and
Hard Magnetic magnetic material forms the n-layer alternatively layered structure that recombiner unit constitutes soft magnetism and Hard Magnetic, and wherein n is natural number, soft magnetic materials
Typical material FeCo, NiFe, the typical material of antiferromagnet is PtMn, IrMn.Figure 14 a- Figure 14 f is respectively permanent magnetic thin film
Material typical set-up schematic diagram.Specifically, as shown in Figure 14 a- Figure 14 f, the composition of permanent magnetic thin film may include: as shown in figures 14a
Single permanent thin film 301, or two or more compound permanent thin films as shown in fig. 14b, Figure 14 b show including two
The case where kind permanent thin film 301 and 302 is alternately stacked；Antiferromagnetic 303 laminated film of soft magnetism 304/ as shown in figure 14 c；Such as figure
Multilayer shown in 14d overlaps soft magnetism and antiferromagnetic n-layer alternatively layered structure film, 304/ Hard Magnetic of soft magnetism as shown in figure 14e
Laminated film 301, and multilayer as shown in figure 14f overlap the n-layer alternatively layered structure film of soft magnetism and Hard Magnetic, and wherein n is
Natural number.
Based on the embodiments of the present invention, those of ordinary skill in the art are without creative efforts
All other embodiment obtained, fall within the protection scope of the utility model.Although the utility model just side of preferred implementation
Formula is illustrated and has been described, it is understood by those skilled in the art that without departing from the claim of the utility model
Limited range can carry out variations and modifications to the utility model.
Claims (13)
1. a kind of magneto-resistor inertial sensor chip, which is characterized in that including substrate, vibration diaphragm, induction magneto-resistor, at least one
A permanent magnetic thin film, in which:
The vibration diaphragm is covered on a side surface of the substrate, and the induction magneto-resistor and the permanent magnetic thin film are set to institute
Surface of the vibration diaphragm far from the substrate is stated, is additionally provided with contact electricity far from the surface of the substrate in the vibration diaphragm
Pole, the induction magneto-resistor are connect by connecting lead wire with the contact electrode；
The substrate includes the cavity that etching is formed, and one of the induction magneto-resistor and the permanent magnetic thin film or whole are set to
The cavity is in the upright projection region of the vibration diaphragm, and the magnetic field that the permanent magnetic thin film generates is in the induction magneto-resistor
Sensitive direction component generate variation, make it is described induction magneto-resistor resistance value generate variation, thus cause output electric signal become
Change.
2. magneto-resistor inertial sensor chip according to claim 1, which is characterized in that the induction magneto-resistor is set to
For the cavity in the upright projection region of the vibration diaphragm with exterior domain, the permanent magnetic thin film is set to the cavity in institute
The medium position in the upright projection region of vibration diaphragm is stated, or
The induction magneto-resistor is set to inside edge of the cavity in the upright projection region of the vibration diaphragm, it is described forever
Magnetic thin film is set to the medium position that the cavity has region in the upright projection of the vibration diaphragm, or
The induction magneto-resistor is set to the medium position in upright projection region of the cavity in the vibration diaphragm, it is described forever
Magnetic thin film is set to the cavity in the upright projection region of the vibration diaphragm with exterior domain.
3. magneto-resistor inertial sensor chip according to claim 1, which is characterized in that further include with reference to magneto-resistor, institute
It states and is located at surface of the vibration diaphragm far from the substrate with reference to magneto-resistor, and be set to the cavity in the vibration diaphragm
Upright projection region with exterior domain, it is described that full-bridge is connected as by package lead with reference to magneto-resistor and the induction magneto-resistor
Or half-bridge structure.
4. magneto-resistor inertial sensor chip according to claim 3, which is characterized in that the reference magneto-resistor is far from institute
The side for stating vibration diaphragm is provided with the magnetic masking layer comprising soft magnetic materials, and the magnetic masking layer covering is described to refer to magneto-resistor.
5. magneto-resistor inertial sensor chip according to claim 3 or 4, which is characterized in that it is described with reference to magneto-resistor and
The induction magneto-resistor is tunnel knot magnetic resistance, giant magnetoresistance or anisotropic magnetoresistive.
6. magneto-resistor inertial sensor chip according to claim 1, which is characterized in that it further include encapsulating structure, it is described
Encapsulating structure is made of package substrate and package casing, and the substrate is located to be made of the package substrate and the package casing
Cavity in, and it is fixed on the package substrate.
7. magneto-resistor inertial sensor chip according to claim 6, which is characterized in that the package casing includes one layer
Or the magnetic field shielding shell that is made of soft magnetic materials of multilayer or one or more layers electric field shielding shell being made of metal foil or
Person stacks the shell constituted by the magnetic field shielding shell and the electric field shielding shell.
8. magneto-resistor inertial sensor chip according to claim 6, which is characterized in that the package substrate is described
Package casing is provided at least one aperture.
9. magneto-resistor inertial sensor chip according to claim 1, which is characterized in that the thickness of the vibration diaphragm
It is 0.001 μm~1000 μm, the contact surface edge of the cavity and the vibration diaphragm is round, ellipse, rectangle or flat
The range of the circumscribed rectangular aspect ratio of the contact surface of row quadrangle, the cavity and the vibration diaphragm is 20:1~1:1, wherein
The wide range of the circumscribed rectangle of the contact surface is 0.1 μm~2000 μm.
10. according to claim 1 or magneto-resistor inertial sensor chip described in 9, which is characterized in that the vibration diaphragm packet
Include the through-hole that multiple etchings are formed.
11. according to claim 1 or magneto-resistor inertial sensor chip described in 2, which is characterized in that the permanent magnetic thin film is
One or more layers hard magnetic material, or recombiner unit is formed by soft magnetic materials and antiferromagnet and constitutes soft magnetism and antiferromagnetic n-layer
Alternatively layered structure, or by soft magnetic materials and Hard Magnetic magnetic material form recombiner unit constitute soft magnetism and Hard Magnetic n-layer it is alternately laminated
Structure, wherein n is natural number, and hard magnetic material includes at least one of CoPt, CoCrPt, FePt, soft magnetic materials include FeCo,
At least one of NiFe, antiferromagnet include at least one of PtMn, IrMn.
12. according to claim 1 or magneto-resistor inertial sensor chip described in 2, which is characterized in that the permanent magnetic thin film fills
Magnetic direction is in permanent magnetic thin film plane or perpendicular to permanent magnetic thin film plane, and the induction magneto-resistor sensitive direction is in permanent magnetic thin film
In plane or perpendicular to permanent magnetic thin film plane.
13. magneto-resistor inertial sensor chip according to claim 1, which is characterized in that the sensor chip includes
Feedback coil；
Feedback coil is planar etch coil, and the planar etch coil is located at the separate substrate side of the vibration diaphragm
Surface, and be set to the cavity in the upright projection region of the vibration diaphragm with exterior domain,
Or the feedback coil is coiled wire-wound coil, the coiled wire-wound coil is located at the surface of the permanent magnetic thin film, or is located at
The underface of the permanent magnetic thin film is simultaneously arranged in lower section or the cavity of the cavity.
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| CN201920437962.1U CN209605842U (en) | 2019-04-02 | 2019-04-02 | A kind of magneto-resistor inertial sensor chip |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109883456A (en) * | 2019-04-02 | 2019-06-14 | 江苏多维科技有限公司 | A kind of magneto-resistor inertial sensor chip |
| CN111473805A (en) * | 2020-04-17 | 2020-07-31 | 江苏多维科技有限公司 | Micro-electro-mechanical environment sensor and preparation method thereof |
| CN109883456B (en) * | 2019-04-02 | 2024-06-28 | 江苏多维科技有限公司 | Magnetoresistive inertial sensor chip |
-
2019
- 2019-04-02 CN CN201920437962.1U patent/CN209605842U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109883456A (en) * | 2019-04-02 | 2019-06-14 | 江苏多维科技有限公司 | A kind of magneto-resistor inertial sensor chip |
| WO2020200076A1 (en) * | 2019-04-02 | 2020-10-08 | 江苏多维科技有限公司 | Magnetoresistive inertial sensor chip |
| US11940299B2 (en) | 2019-04-02 | 2024-03-26 | MultiDimension Technology Co., Ltd. | Magnetoresistive inertial sensor chip |
| CN109883456B (en) * | 2019-04-02 | 2024-06-28 | 江苏多维科技有限公司 | Magnetoresistive inertial sensor chip |
| CN111473805A (en) * | 2020-04-17 | 2020-07-31 | 江苏多维科技有限公司 | Micro-electro-mechanical environment sensor and preparation method thereof |
| CN111473805B (en) * | 2020-04-17 | 2021-09-21 | 江苏多维科技有限公司 | Micro-electro-mechanical environment sensor and preparation method thereof |
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