CN102353913A - Measuring transducer driven by monoaxial piezoelectricity for low-intensity magnetic field - Google Patents
Measuring transducer driven by monoaxial piezoelectricity for low-intensity magnetic field Download PDFInfo
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- CN102353913A CN102353913A CN2011101960870A CN201110196087A CN102353913A CN 102353913 A CN102353913 A CN 102353913A CN 2011101960870 A CN2011101960870 A CN 2011101960870A CN 201110196087 A CN201110196087 A CN 201110196087A CN 102353913 A CN102353913 A CN 102353913A
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Abstract
The invention provides a measuring transducer driven by monoaxial piezoelectricity for a low-intensity magnetic field, which comprises an insulating base, a GMR (giant magnetoresistive) sensitive element, two same magnetic line of force collectors, a modulating film, a micro cantilever beam and a piezoelectric ceramic sheet. Three pairs of electrodes are plated on the surface of the insulating base; the two magnetic line of force collectors are respectively fixed on the surface of the insulating base at two ends of the GMR sensitive element; the two ends of the GMR sensitive element are respectively positioned in concave grooves of the magnetic line of force collectors; the micro cantilever beam comprises a base and a cantilever; the base is fixed on the insulating base; the base is connected with the cantilever; a free end of the cantilever is provided two aligning holes; the modulating film made of a high-permeability soft magnetic material is prepared between the two aligning holes; a vertical distance between the modulating film and the GMR sensitive element is 8-15 microns; and the piezoelectric ceramic sheet is adhered on the cantilever. The measuring transducer for the low-intensity magnetic field, which is provided by the invention, has a deeper modulation depth, higher resolution power, a simple structure, a simple process and a lower driving voltage.
Description
Technical field
The present invention relates to sensor technical field,, specifically, relate to a kind of uniaxial magnetic quantity sensor that is used to measure Weak magentic-field especially for the sensor of feeble signal.
Background technology
Weak magentic-field is measured and all is widely used in fields such as earth-magnetic navigation, target detection, geologic prospecting, biomedicines.It is more that present stage is used for Weak magentic-field measured sensor type; Mainly comprise fluxgate sensor, optical pumping formula Magnetic Sensor, proton formula Magnetic Sensor, optical fiber Magnetic Sensor, giant magnetic impedance Magnetic Sensor, GMR (Giant Magnetoresistive; Giant magnetoresistance) Magnetic Sensor etc.; Wherein the GMR Magnetic Sensor is based on that microelectronic technique processes, the Magnetic Sensor of comparing other types obviously have volume little, low in energy consumption, be prone to characteristics such as batch process.
1988; The experiment group that French scientist Albert Fert and Germany scientist Peter Grunberg lead has separately successively independently found the GMR effect; Wherein Albert Fert experiment group study finds that the resistance value of iron-chromium multilayer film sharply changes in Weak magentic-field; And with this phenomenon called after " GMR effect ", and PeterGrunberg group has also found similar experimental phenomena in iron-chromium-three layers of antiferromagnet film structure of iron.After this just launched in high gear to the GMR Study on Effect, the new construction with GMR effect constantly appears, and the structure with GMR effect also is referred to as the GMR sensitive element.Along with deepening continuously of research; The magnetic field sensitivity that it is found that the GMR sensitive element is high more; Its noise particularly 1/f noise is also big more; And the 1/f magnetic noise that wherein depends on the inner magnet structure can't suppress through the electrical modulation method of routine, and this point has limited the further raising of GMR Magnetic Sensor resolving power just.
In recent years carried out big quantity research for the problem that how effectively to suppress the 1/f noise of GMR sensitive element abroad, wherein used micro mechanical structure to drive thin magnetic film and modulate tested low frequency Weak magentic-field to suppress the technical scheme of GMR sensitive element 1/f noise the most feasible.The breadboard Alan S.Edelstein of AUS etc. has obtained 4 relevant American National patents (patent No.: US6670809 successively between 2003 to 2007; US7046002; US7185541; US7195945); The common feature of technical scheme is described in these patents: at first magnetic line of force collector is prepared on micro mechanical structure; Utilize the static driven mode to drive micro mechanical structure and the common dither of magnetic line of force collector then; The magnetic field enlargement factor of magnetic line of force collector periodically changes thereupon, be in this moment GMR sensitive element in the magnetic line of force collector gap may detect after the high frequency modulated by measuring magnetic field.Though this type of technical scheme can effectively suppress the 1/f noise of GMR sensitive element, and obviously improves the low frequency magnetic field resolving power of GMR Magnetic Sensor, remain at present in some problems:
(1) depth of modulation is lower, have only about 14%, so the magnetic field resolving power is lower;
(2) structure relative complex, technology relate to deep reaction ion etching technology and Silicon-On-Insulator technology, take time and effort, and cost is very high;
(3) realize that the required static driven voltage of modulation apparently higher than integrated circuit supply voltage commonly used, reaches more than the 50V, make troubles for actual the use.
Summary of the invention
The present invention will provide a kind of depth of modulation bigger, and resolving power is higher, and structural manufacturing process is simple, the weak magnetic measurement sensor that driving voltage is lower.
Technical scheme of the present invention is: a kind of weak magnetic measurement sensor of single shaft Piezoelectric Driving comprises dielectric base, the three pairs of electrodes, GMR sensitive element, two identical magnetic line of force collectors, modulation film, micro-cantilever and piezoelectric ceramic thin sheet.Said dielectric base adopts the glass sheet of surface finish, on the dielectric base surface, is coated with three pairs of electrodes; Said GMR sensitive element is fine strip shape, and its middle position has a horizontal gap, and the GMR sensitive element is fixed on the dielectric base surface.The narrower end of each magnetic line of force collector has " recessed " shape groove, and " recessed " shape well width is slightly wideer than GMR sensitive element; Two magnetic line of force collectors are separately fixed on the dielectric base surface at GMR sensitive element two ends, and GMR sensitive element two ends lay respectively in " recessed " shape groove of magnetic line of force collector, and GMR sensitive element and two magnetic line of force collector three axis are in line.Second pair is connected with two pairs of input and output electrodes of GMR sensitive element respectively with the 3rd pair of electrode.Said micro-cantilever comprises pedestal, cantilever.Pedestal is fixed on the dielectric base, and pedestal connects cantilever, pedestal upper surface and cantilever upper surface copline, and cantilever thickness is less than base thickness.The free end of cantilever has two mating holes, has several damping holes near mating holes and along the axis of cantilever successively to the pedestal direction; Preparation has the modulation film of high magnetic permeability soft magnetic material between two mating holes of cantilever lower surface; The modulation film is over against the gap of GMR sensitive element; The shape of modulation film is identical with the surface configuration in gap, and modulation film and GMR sensitive element vertical range are confirmed as required, be generally 8～15 microns.Said piezoelectric ceramic thin sheet surface is a rectangle, and its width is consistent with the cantilever width, and thickness direction is a polarised direction; Piezoelectric ceramic thin sheet is bonded on the cantilever; Extend to pedestal along piezoelectric ceramic thin sheet length direction one end, and be connected with first pair of electrode electricity, the other end extends near damping hole.
The invention has the beneficial effects as follows: adopt the Piezoelectric Driving micro-cantilever as the modulation power source; Modulation film Oscillation Amplitude and depth of modulation be big (emulation experiment proves greater than 40%); Making faint D.C. magnetic field through the modulation of modulating film is high-frequency alternating magnetic field at GMR sensitive element place; The 1/f noise that has suppressed the GMR element; Through adopting magnetic line of force collector to make Weak magentic-field obtain amplification, thereby the Magnetic Sensor measurement resolution is greatly improved (the emulation experiment proof has improved two one magnitude) at GMR sensitive element place; Because of micro cantilever structure is simple, easily manufactured, effectively reduce the cost of manufacture of sensor; The driving force of piezoelectric ceramic thin sheet is bigger, only needs less driving voltage (less than 15V) can obtain enough Oscillation Amplitudes.
Description of drawings
Fig. 1 is the structural representation of the single shaft Piezoelectric Driving weak magnetic measurement sensor that provides of a certain embodiment of the present invention;
Fig. 2 is magnetic line of force collector and the GMR sensitive element structure synoptic diagram in a certain embodiment of the present invention;
Fig. 3 (a) is the vertical view of micro-cantilever in a certain embodiment of the present invention;
Fig. 3 (b) is the upward view of micro-cantilever in a certain embodiment of the present invention.
The 1-pedestal, 2-cantilever, 3-mating holes, 4-damping hole, 5-piezoelectric ceramic thin sheet; The 6-dielectric base, first pair of electrode of 7-, second pair of electrode of 8-, the 3rd pair of electrode of 9-, 10-GMR sensitive element; 11-magnetic line of force collector, the 12-gap, the 13-micro-cantilever, 14-modulates film, 15-step.
Embodiment
Below in conjunction with accompanying drawing the present invention is described further.
Fig. 1 is the structural representation of the single shaft Piezoelectric Driving weak magnetic measurement sensor that provides of a certain embodiment of the present invention.As shown in the figure: comprise dielectric base 6, electrode pair 7, electrode pair 8, electrode pair 9, pedestal 1, cantilever 2, mating holes 3, damping hole 4, piezoelectric ceramic thin sheet 5, GMR sensitive element 10 and magnetic line of force collector 11.The glass sheet that dielectric base 6 adopts surface finish, shape is not limited to the rectangle in this embodiment, can also be circle etc.Electrode pair the 7,8, the 9th, through elder generation's sputter on dielectric base 6 (or vacuum evaporation, plating etc.) conductive metal film (gold, aluminium, copper etc.), and then the photoetching corrosion moulding.The electrode that electrode pair 7 connects above the piezoelectric ceramic thin sheet 5; Electrode pair 8 connects the pair of electrodes that carries on the GMR sensitive element 10; Another that carries on the electrode pair 9 connection GMR sensitive elements 10 is to electrode.The shape and the position of electrode pair 7,8,9 do not have specific (special) requirements, connect with convenient lead-in wire to be as the criterion, and the shape of electrode pair 7,8,9 shown in Figure 1 and position only are wherein a kind of selections preferably.Pedestal 1 links to each other with cantilever 2, and the shape of pedestal 1 is not limited to " recessed " shape shown in Figure 1, is guaranteeing not influence electrode pair 7 and providing for cantilever 2 under the prerequisite of held stationary, support to be designed to multiple shape.Cantilever 2 one ends link to each other with pedestal 1, and another section is a free end, stretch out forward, and the shape of cantilever 2 is not limited to shape shown in Figure 1 (can also be rectangle, trapezoidal, tup type etc.).The free end of cantilever 2 has 2 mating holes 3 (seeing Fig. 3 (a)).Near mating holes 3, inwardly have several damping holes 4 successively along cantilever 2 axis.The width of piezoelectric ceramic piece 5 is identical with cantilever 2, sticks with glue the upper surface at cantilever 2, and near damping hole 4, the other end extends to pedestal 1, and is electrically connected with electrode pair 7 along piezoelectric ceramic piece 5 length directions one end.Pedestal 1 is fixed on the dielectric base 6 through the method for low-temperature bonding technology or direct viscose, makes the gap 12 of modulation film 14 over against GMR sensitive element 10, and modulation film 14 is confirmed with GMR sensitive element 10 vertical ranges as required, is generally 8～15 microns.
Fig. 2 is GMR sensitive element 10 and the structural representation of magnetic line of force collector 11 in of the present invention a certain embodiment.As shown in the figure: magnetic line of force collector 11 is processed (like NiFe, CoZrNb etc.) by the high magnetic permeability soft magnetic material; Be shaped as trapezoidal (also can be rectangle); The one of which end has " recessed " shape groove; The width of " recessed " shape groove is slightly wideer than the width of GMR sensitive element 10, can make magnetic line of force collector 11 through lithography corrosion process.GMR sensitive element 10 is commercial elements (like AA002-02 of U.S. NVE company etc.); Be fine strip shape; There is a horizontal gap 12 centre; Its two ends lay respectively in a magnetic line of force collector 11 " recessed " the shape groove; GMR sensitive element 10 and two magnetic line of force collector 11 these three axis adopt epoxide-resin glue to be adhesively fixed on the dielectric base in line.
Fig. 3 (a) and Fig. 3 (b) are the top and bottom perspective views of micro-cantilever 13 in a certain embodiment of the present invention.As shown in the figure: micro-cantilever 13 adopts little silicon technology to process, and comprises pedestal 1, cantilever 2.The shape of pedestal 1 is not limited to " recessed " shape shown in Figure 1, is guaranteeing not influence electrode pair 7 and providing for cantilever 2 under the prerequisite of stable support to be designed to multiple shape.Pedestal 1 links to each other with cantilever 2, pedestal 1 upper surface and cantilever 2 upper surface coplines, and cantilever 2 thickness are less than pedestal 1 thickness, so there is a step 15 in both junctions.The free end of cantilever 2 has two mating holes 3, inwardly has some damping holes 4 successively along cantilever 2 axis near mating holes 3, and the damping hole number can be 3～5.Modulation film 14 is arranged between two mating holes 13 of cantilever 2 lower surfaces.Modulation film 14 is over against the gap 12 of GMR sensitive element; The shape of modulation film 14 is identical with the surface configuration in gap 12; The preparation method of modulation film 14 electroplates (or vacuum evaporation, sputter etc.) preparation certain thickness high magnetic permeability soft magnetic material film (like NiFe, CoZrNb etc.) on the lower surface of cantilever 2, and then with the moulding of photoetching caustic solution.
During use, first pair of electrode is connected with outside exciting circuit, the piezoelectric ceramic thin sheet vibration drives semi-girder and is operated in resonant condition; Second pair of electrode is connected with outside constant voltage source (or current source), and the 3rd pair of electrode is connected with outer detecting circuit, can obtain the size of low-intensity magnetic field according to the measured value of outer detecting circuit.
Claims (2)
1. the weak magnetic measurement sensor of a single shaft Piezoelectric Driving; It is characterized in that, comprise dielectric base (6), three pairs of electrodes (7,8,9), GMR sensitive element (10), two identical magnetic line of force collectors (11), modulation film (14), micro-cantilever (13) and piezoelectric ceramic thin sheet (5); Said dielectric base (6) adopts the glass sheet of surface finish, on dielectric base (6) surface, is coated with three pairs of electrodes (7,8,9); Said GMR sensitive element (10) is fine strip shape, and middle position has a horizontal gap (12), and GMR sensitive element (10) is fixed on insulating base (6) surface; The narrower end of each magnetic line of force collector (11) has " recessed " shape groove, and " recessed " shape well width is slightly wideer than GMR sensitive element (10); Two magnetic line of force collectors (11) are separately fixed on dielectric base (6) surface at GMR sensitive element (10) two ends; GMR sensitive element (10) two ends lay respectively in " recessed " shape groove of magnetic line of force collector (11), and GMR sensitive element (10) and two magnetic line of force collectors (11) three axis are in line; Second pair of electrode (8) is connected with two pairs of input and output electrodes of GMR sensitive element (10) respectively with the 3rd pair of electrode (9); Said micro-cantilever (13) comprises pedestal (1), cantilever (2); Pedestal (1) is fixed on the dielectric base (6), and pedestal (1) connects cantilever (2), pedestal (1) upper surface and cantilever (2) upper surface copline, and cantilever (2) thickness is less than pedestal (1) thickness; The free end of cantilever (2) has two mating holes (3), has several damping holes (4) near mating holes and along the axis of cantilever (2) successively to pedestal (1) direction; Preparation has the modulation film (14) of high magnetic permeability soft magnetic material between cantilever (2) two mating holes of lower surface (3), and modulation film (14) is over against the gap of GMR sensitive element (10), and the shape of modulation film (14) is identical with the surface configuration of gap (12); Said piezoelectric ceramic thin sheet (5) surface is a rectangle; Its width is consistent with cantilever (2) width; Thickness direction is a polarised direction; Piezoelectric ceramic thin sheet (5) is bonded on the cantilever (2); Extend to pedestal (1) along piezoelectric ceramic thin sheet (5) length direction one end; And be electrically connected with first pair of electrode (7), the other end extends near damping hole (4).
2. the weak magnetic measurement sensor of a kind of single shaft Piezoelectric Driving according to claim 1 is characterized in that, the scope of modulation film (14) and GMR sensitive element (10) vertical range is at 8 to 15 microns.
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| CN103116144A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Z-direction magnetic field sensor with magnetic orbit structure |
| CN103116143A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Integrated high-accuracy triaxial magnetic sensor |
| CN103323796A (en) * | 2013-06-21 | 2013-09-25 | 中国人民解放军国防科学技术大学 | MTJ magnetic field sensor using graphene as barrier layer |
| CN103323794A (en) * | 2013-06-21 | 2013-09-25 | 中国人民解放军国防科学技术大学 | GMR-MEMS integrated weak magnetic sensor adopting plane micro-coil |
| CN103323795A (en) * | 2013-06-21 | 2013-09-25 | 中国人民解放军国防科学技术大学 | Integrated three-axis magnetic sensor |
| CN103706128A (en) * | 2013-02-01 | 2014-04-09 | 万代股份有限公司 | Magnetic response toy, main toy body and auxiliary toy body employed by magnetic response toy |
| CN106646278A (en) * | 2016-12-09 | 2017-05-10 | 中国人民解放军国防科学技术大学 | Low-noise MEMS pre-amplification device utilizing high-resolution magnetic field detection |
| CN107894577A (en) * | 2017-10-27 | 2018-04-10 | 中国人民解放军国防科技大学 | Weak magnetic sensor for inhibiting 1/f noise by regulating and controlling magnetic moment by electric field and application method thereof |
| CN109556647A (en) * | 2018-11-30 | 2019-04-02 | 苏州大学 | A kind of low-frequency noise inhibition device and method of tunnel magneto-resistance effect sensor |
| CN110286338A (en) * | 2019-06-13 | 2019-09-27 | 中国人民解放军国防科技大学 | Magnetic field modulation structure suitable for integral type triaxial magnetic sensor |
| CN113562687A (en) * | 2021-07-23 | 2021-10-29 | 中国科学院空天信息创新研究院 | Manufacturing method of low-frequency MEMS (micro-electromechanical systems) magnetoresistive sensor modulated by magnetoresistive motion |
| CN115248403A (en) * | 2022-06-27 | 2022-10-28 | 上海阿芮斯智能科技有限公司 | MEMS fluxgate sensor based on conical magnetic gathering device and manufacturing method thereof |
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Cited By (23)
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| CN103116143A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Integrated high-accuracy triaxial magnetic sensor |
| CN103116144A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Z-direction magnetic field sensor with magnetic orbit structure |
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| CN103706128A (en) * | 2013-02-01 | 2014-04-09 | 万代股份有限公司 | Magnetic response toy, main toy body and auxiliary toy body employed by magnetic response toy |
| CN103323796B (en) * | 2013-06-21 | 2015-07-29 | 中国人民解放军国防科学技术大学 | A kind of MTJ magnetic field sensor using Graphene as barrier layer |
| CN103323795A (en) * | 2013-06-21 | 2013-09-25 | 中国人民解放军国防科学技术大学 | Integrated three-axis magnetic sensor |
| CN103323794A (en) * | 2013-06-21 | 2013-09-25 | 中国人民解放军国防科学技术大学 | GMR-MEMS integrated weak magnetic sensor adopting plane micro-coil |
| CN103323795B (en) * | 2013-06-21 | 2015-04-08 | 中国人民解放军国防科学技术大学 | Integrated three-axis magnetic sensor |
| CN103323794B (en) * | 2013-06-21 | 2015-07-15 | 中国人民解放军国防科学技术大学 | GMR-MEMS integrated weak magnetic sensor adopting plane micro-coil |
| CN103323796A (en) * | 2013-06-21 | 2013-09-25 | 中国人民解放军国防科学技术大学 | MTJ magnetic field sensor using graphene as barrier layer |
| CN106646278B (en) * | 2016-12-09 | 2019-05-24 | 中国人民解放军国防科学技术大学 | A kind of low noise MEMS preamplifier part using high resolution detection of magnetic field |
| CN106646278A (en) * | 2016-12-09 | 2017-05-10 | 中国人民解放军国防科学技术大学 | Low-noise MEMS pre-amplification device utilizing high-resolution magnetic field detection |
| CN107894577A (en) * | 2017-10-27 | 2018-04-10 | 中国人民解放军国防科技大学 | Weak magnetic sensor for inhibiting 1/f noise by regulating and controlling magnetic moment by electric field and application method thereof |
| CN107894577B (en) * | 2017-10-27 | 2019-11-29 | 中国人民解放军国防科技大学 | Weak magnetic sensor for inhibiting 1/f noise by regulating and controlling magnetic moment by electric field and application method thereof |
| CN109556647A (en) * | 2018-11-30 | 2019-04-02 | 苏州大学 | A kind of low-frequency noise inhibition device and method of tunnel magneto-resistance effect sensor |
| CN110286338A (en) * | 2019-06-13 | 2019-09-27 | 中国人民解放军国防科技大学 | Magnetic field modulation structure suitable for integral type triaxial magnetic sensor |
| CN110286338B (en) * | 2019-06-13 | 2021-04-02 | 中国人民解放军国防科技大学 | Magnetic field modulation structure suitable for integral type triaxial magnetic sensor |
| CN113562687A (en) * | 2021-07-23 | 2021-10-29 | 中国科学院空天信息创新研究院 | Manufacturing method of low-frequency MEMS (micro-electromechanical systems) magnetoresistive sensor modulated by magnetoresistive motion |
| CN113562687B (en) * | 2021-07-23 | 2024-04-09 | 中国科学院空天信息创新研究院 | Manufacturing method of low-frequency MEMS (micro-electromechanical systems) magneto-resistive sensor modulated by magneto-resistive motion |
| CN115248403A (en) * | 2022-06-27 | 2022-10-28 | 上海阿芮斯智能科技有限公司 | MEMS fluxgate sensor based on conical magnetic gathering device and manufacturing method thereof |
| CN115856725A (en) * | 2022-11-25 | 2023-03-28 | 南方电网数字电网研究院有限公司 | Magnetic sensor |
| CN115856725B (en) * | 2022-11-25 | 2023-12-12 | 南方电网数字电网研究院有限公司 | magnetic sensor |
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