CN103900753A - High-precision silicon micro-resonance type gas pressure sensor based on SOI technology - Google Patents
High-precision silicon micro-resonance type gas pressure sensor based on SOI technology Download PDFInfo
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- CN103900753A CN103900753A CN201210587264.2A CN201210587264A CN103900753A CN 103900753 A CN103900753 A CN 103900753A CN 201210587264 A CN201210587264 A CN 201210587264A CN 103900753 A CN103900753 A CN 103900753A
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Abstract
The invention discloses an electromagnetic excitation and electromagnetic testing high-precision silicon micro-resonance type gas pressure sensor based on the SOI technology. A sensor chip serves as a core part, and an SOI silicon wafer with a single crystal silicon H-shaped resonator and a single crystal silicon pressure sensitive film which are manufactured through the SOI technology is bonded together with a borosilicate glass cover piece with lead through holes through a vacuum anode to form the sensor chip. The single crystal silicon H-shaped resonator works in reference vacuum, is not influenced by media with the gas pressure to be measured, and is high in quality coefficient and stable in frequency output. The problem that leads are difficult to package at the wafer level is solved while vacuum package at the wafer level is achieved.
Description
Technical field
The present invention relates to the MEMS baroceptor technology in microelectromechanical systems, be specifically related to a kind of high precision silicon micro-resonance type baroceptor based on SOI technique.
Background technology
Microelectromechanical systems (Micro-Electro-Mechanical Systems, be called for short MEMS) be a kind of in the multiple Micrometer-Nanometer Processing Technology of fusion, utilize the mature technology developing from semiconductor technology, MEMS device can carry out in enormous quantities, low-cost production.In addition, it is little that MEMS device generally has volume, the features such as good stability, widespread use in multiple fields such as Aero-Space, automobile making.
The output detection signal of resonant mode baroceptor is directly converted by the vibration frequency signal of resonator, with respect to the range signal (being mainly voltage magnitude) of the outputs such as condenser type, resistance-type and piezoelectric type, frequency signal has higher stability and antijamming capability.
The sensitive structure of existing silicon micro-resonance type baroceptor is typically designed as by the gentle pressure sensitive membrane of resonator and forms, tested air pressure is converted to the strain of diaphragm through air pressure sensitive membrane, the strain of diaphragm makes resonance beam be subject to axial stress effect, thereby change its stiffness characteristics, and then the frequency of resonance beam is changed, obtain the size of air pressure by measuring the frequency of resonance beam.
For realizing barometric surveying, conventionally to form vacuum reference cavity in air pressure sensitive membrane one side.For improving performance, resonator also needs to be placed under vacuum environment.Yokogawa Motor company of Japan adopts vacuum-packed method (referenced patent application " Vibration type pressure sensor ", number of patent application: US2006/0010981 A1) on sheet, realizes the vacuum seal of resonator.Application number is the method that Can Vacuum Package has been mentioned in the patented claim of CN201010247579.3, realize the vacuum seal of resonator and the foundation of vacuum reference cavity by single Vacuum Package simultaneously, but the method for this single-chip package, production efficiency is low, cost of products is higher.Patented claim CN201010218423.2 has mentioned the wafer level packaging that adopts Intermediate Layer Bonding technology, and substrate and the lower cover substrate made through semiconductor technology bind bonding by resin material, forms vacuum reference cavity, realizes wafer level packaging.
But the method that CN201010218423.2 mentions will, less than four resonators are positioned in vacuum reference cavity, be exposed in atmosphere resonator, greatly reduce the quality factor of resonator.
In addition, the organic material that Intermediate Layer Bonding technology adopts can be introduced larger stress, affects the output stability of baroceptor.
Summary of the invention
For solving the above-mentioned problems in the prior art, the present invention proposes a kind of high precision silicon micro-resonance type baroceptor based on SOI technique, it comprises: sensor chip (1), described sensor chip (1) comprises soi wafer (9) and Pyrex cover plate (10), has two H type resonators (11), supports anchor point (12) gentle pressure sensitive membrane (13) on described soi wafer (9); Described H type resonator (11) is clamped in described air pressure sensitive membrane (13) by described support anchor point (12); Described Pyrex cover plate (10) is closely combined into one by anode linkage ground mode with described soi wafer (9), surround vacuum reference cavity (16), described two H type resonators (11) are sealed in described vacuum reference cavity.
The present invention compared with prior art, there is remarkable advantage: (1) utilizes the method for anode linkage to realize wafer-level vacuum package, in reducing stress, improving sensor output stability, can enhance productivity, reduce costs and reduced chip package cost; (2) be encapsulated in the resonator quality factor of vacuum-sealed cavity higher, export more stablely, baroceptor can obtain higher resolution; (3) sensor chip can directly adopt the method for gold ball bonding to draw wire, has solved the wafer level packaging difficult problem that goes between; (4) method of employing electric magnetization and electromagnetic detection, compensates the energy consumption of resonator effectively, has improved sensor quality factor; (5) sensor processing technology is simple, and yield rate is high, is suitable for batch production.
Accompanying drawing explanation
Fig. 1 is the structural profile schematic diagram of the sensor chip that proposes of the present invention;
Fig. 2 is the internal anatomy of the sensor chip that proposes of the present invention;
Fig. 3 is the structural representation of H type resonator on the sensor chip that proposes of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As illustrated in fig. 1 and 2, the present invention proposes a kind of high precision silicon micro-resonance type baroceptor of the electric magnetization electromagnetic detection based on SOI technique, this sensor comprises sensor chip 1, stress isolation layer 2, metal base 3, pipe cap 4 and magnet 5.Wherein, sensor chip 1 is fixed on metal base 3 by stress isolation layer 2; Metal base 3 is equipped with eight bobbins 6, is connected with the metal electrode in fairlead 8 on sensor chip 1 by the lead-in wire 7 of gold ball bonding, plays the effect that electric signal is drawn; Magnet 5 is fixed on the pipe cap 4 with gas port, and pipe cap 4 covers on metal base 3, and its lower end and the 3 periphery sealings of metal base are affixed.
Wherein, in order further to reduce the impact of thermal stress on device, a jiao of 2 fixation of sensor chip 1 of stress isolation layer.Sensor chip 1, stress isolation layer 2 and metal base 3 threes can be connected together by Wear Characteristics of Epoxy Adhesive, play the effect of fixing and supporting chip.For the lead-in wire of protection chip and Au wire bonding, to cover on metal base with the pipe cap 4 of magnet, its lower end is affixed by epoxy glue and metal base periphery.
Sensor chip 1 is made up of soi wafer 9 and Pyrex cover plate 10.On soi wafer 9, there are two H type resonators 11, eight to support anchor point 12, air pressure sensitive membrane 13, eight lead ends 14 and vacuum seal frames 15; On Pyrex cover plate 10, make fairlead 8 and vacuum-sealed cavity 16, closely combined by method and the soi wafer 9 of anode linkage, formed vacuum reference cavity 16, described two H type resonators 11 are sealed in described vacuum reference cavity 16.
By the semiconductor technology such as photoetching, deep etching, in the low-resistance single crystal silicon device layer of soi wafer 9 upper heavy dopings, make described two H type resonators 11, eight and support anchor point 12, eight lead ends 14 and vacuum seal frames 15, and described air pressure sensitive membrane 13 is made by deep etching by the basalis of soi wafer 9.Wherein two H type resonators 11 are unsettled, and in two H type resonators 11, four end points of each are clamped in air pressure sensitive membrane 13 by described eight support anchor points 12 separately.The single beam of described H type resonator 11 supports anchor points 12 and two lead ends 14 and forms the path of drive current (or detecting electric current) with corresponding two that support it.Wherein each lead end 14 by groove with around keep apart, prevent short circuit.By methods such as chemical corrosion or precision optical machinery processing or Laser Processings, on Pyrex cover plate 10, make fairlead 8 and vacuum reference cavity 16.Finally by the method for anode linkage, Pyrex cover plate 10 and soi wafer 9 are closely combined, surround vacuum reference cavity.
As shown in Figure 3, described H type resonator 11 is made up of two clamped rectangular beams of the on all four both-end of length, width and thickness, the centre of two beams connects with a thickness rectangular block the same with beam, can guarantee that like this two beams can while homophase once per revolution vibration in the time of low order frequency.
The mode that described H type resonator 11 adopts electric magnetization to detect realizes input and the output of sensor, in the time that the single beam of H type resonator 11 passes through exchange current, because magnet provides the magnetic field perpendicular to paper direction, described H type resonator 11 is subject to being parallel to the Ampère force of paper.In the time that the natural frequency of the exchange current frequency of passing through and resonator is consistent, resonator vibrates amplitude maximum, another root single-beam is because cutting magnetic induction line has produced alternating electromotive force, therefore external output electrical signals, and this electric signal frequency is identical with described H type resonator 11 natural frequencys.
Because a side of air pressure sensitive membrane 13 is vacuum reference cavity 16, when there being Z-direction gaseous tension to act on the opposite side of air pressure sensitive membrane 13, will there is deformation in air pressure sensitive membrane 13.The H type resonator 11 (the H type resonator on the left side as shown in Figure 1) that makes to be placed on air pressure sensitive membrane 13 edges is subject to compressive stress, and another resonator 11 is subject to tension.Two suffered bending stresses of H type resonator can cause the variation of its natural frequency, and therefore the size of resonator natural frequency can characterize the size of air pressure.And because H type resonator 11 adopts the mode of electric magnetization electromagnetic detection, by the driving of outer detecting circuit, its natural frequency can be converted into electric signal output, the variation that therefore further just can pass through exported electric signal frequency detects the variation of air pressure.
Because two suffered stress directions of resonator are contrary, and the structural parameters of two H type resonators 11 are identical, clamped in the correct position of air pressure sensitive membrane according to stress distribution both-end, under gas pressure, the natural frequency of two H type resonators 11 changes in the opposite direction, can realize Differential Detection, device sensitivity is significantly improved.
In sum, the solution of the present invention, owing to having adopted the design of two resonators, is conducive to adjust the parameter such as the length of resonator and the position of clamped point; And the present invention directly adopts low-resistance silicon to conduct electricity, the insulation course in groove and the soi wafer obtaining by deep etching makes different current path insulation; The present invention, by by resonator packages in a vacuum, has improved the quality factor of sensor; The present invention also adopts silicon-glass anodic bonding to complete Vacuum Package, has effectively improved production efficiency and has reduced thermal stress.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. the high precision silicon micro-resonance type baroceptor based on SOI technique, it comprises sensor chip (1), described sensor chip (1) comprises soi wafer (9) and Pyrex cover plate (10), has two H type resonators (11), supports anchor point (12) gentle pressure sensitive membrane (13) on described soi wafer (9); Described H type resonator (11) is clamped in described air pressure sensitive membrane (13) by described support anchor point (12); Described Pyrex cover plate (10) is closely combined into one by anode linkage ground mode with described soi wafer (9), surround vacuum reference cavity (16), described two H type resonators (11) are sealed in described vacuum reference cavity.
2. baroceptor according to claim 2, is characterized in that: described two H type resonators (11) and support anchor point (12) are made by the low-resistance single crystal silicon device layer of described soi wafer (9) upper heavy doping; Described air pressure sensitive membrane (13) is made by the basalis of described soi wafer; Described two H type resonators (11) are unsettled, and wherein four end points of two parallel girders of each H type resonator (11) are clamped in air pressure sensitive membrane (13) by supporting anchor point (12) separately.
3. baroceptor according to claim 2, it is characterized in that: described H type resonator (11) is made up of two clamped rectangular beams of the on all four parallel both-end of length, width and thickness, a thickness rectangular block the same with beam connects for the centre of two parallel girders, to guarantee two beams homophase once per revolution vibration simultaneously when the low order frequency.
4. baroceptor according to claim 3, it is characterized in that: on described soi wafer (9), also there is lead end (14), in two parallel girders of described H type resonator (11) one with corresponding two paths that support anchor points (12) and two lead ends (14) and form drive current, another root in two parallel girders of described H type resonator (11) supports the path of anchor point (12) and two other lead end (14) formation detection electric current with corresponding two other.
5. baroceptor according to claim 1, is characterized in that: the mode that adopts electric magnetization to detect realizes input and the output of described baroceptor.
6. baroceptor according to claim 1, is characterized in that: described baroceptor also comprises magnet (5); And in the time that a beam of described H type resonator (11) passes through exchange current, magnet (5) provides the magnetic field perpendicular to paper direction, and described H type resonator (11) is subject to being parallel to the Ampère force of paper; And in the time that the natural frequency of the exchange current frequency of passing through and described H type resonator (11) is consistent, the Oscillation Amplitude maximum of described H type resonator (11), and another root beam cutting magnetic induction line produces alternation induced electromotive force, and then the output electric signal identical with described H type resonator (11) natural frequency.
7. according to the described baroceptor of claim 1, it is characterized in that: a side of air pressure sensitive membrane (13) is vacuum reference cavity (16), in the time having Z-direction gaseous tension to act on the opposite side of air pressure sensitive membrane (13), there is deformation in air pressure sensitive membrane (13), make the H type resonator (11) that is placed on air pressure sensitive membrane (13) edge be subject to axial compression stress, and another H type resonator (11) is subject to axial tension stress, and the suffered axial stress of described another H type resonator (11) causes its natural frequency to change, and then cause exported electric signal to change, detect the variation of air pressure with this.
8. baroceptor according to claim 1, is characterized in that: described baroceptor also comprises stress isolation layer (2), and described stress isolation layer (2) is for one jiao of fixation of sensor chip (1).
9. baroceptor according to claim 1, it is characterized in that, described baroceptor also comprises metal base (3) and pipe cap (4), and described sensor chip (1) should be fixed on described metal base (3) by layer (2) by described stress diaphragm; On described spring silex glass cover plate (10), also there are multiple fairleads (8), on described metal base (3), be equipped with multiple bobbins (6), described bobbin (6) is connected with the metal electrode in described fairlead (8) by the lead-in wire of gold ball bonding, plays the effect that signal is drawn; Described pipe cap (4) covers at metal base (3) upper, and its lower end and the sealing of metal base (3) periphery are affixed.
10. baroceptor according to claim 1, it is characterized in that, on described soi wafer (9), also comprise vacuum seal frame (15), described vacuum seal frame (15) is made by the low-resistance single crystal silicon device layer of described soi wafer (9) upper heavy doping, and described Pyrex cover plate (10) is combined closely and forms described vacuum reference cavity (16) with described vacuum seal frame (15).
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| CN104535251A (en) * | 2015-01-12 | 2015-04-22 | 中国科学院电子学研究所 | Temperature self-compensating method and measuring mode for double-resonator pressure sensor |
| CN104555906A (en) * | 2015-01-26 | 2015-04-29 | 中航（重庆）微电子有限公司 | Chip packaging method |
| CN104568238A (en) * | 2014-12-08 | 2015-04-29 | 太原航空仪表有限公司 | Electromagnetic excitation resonant diaphragm pressure sensor |
| CN105203234A (en) * | 2015-09-18 | 2015-12-30 | 中国科学院电子学研究所 | Resonant type pressure sensor |
| CN105444926A (en) * | 2014-07-08 | 2016-03-30 | 中航（重庆）微电子有限公司 | MEMS resonant-type pressure sensor and manufacturing process thereof |
| CN106887417A (en) * | 2017-02-15 | 2017-06-23 | 西安赛创半导体有限公司 | A kind of silicon oscillator based on bonded seal technology |
| CN108254106A (en) * | 2018-01-30 | 2018-07-06 | 中国科学院半导体研究所 | A kind of silicon silica glass silicon four-layer structure resonant mode MEMS pressure sensor preparation method |
| CN109642840A (en) * | 2016-08-03 | 2019-04-16 | ams有限公司 | Pressure sensor module |
| CN109883603A (en) * | 2019-03-13 | 2019-06-14 | 中国电子科技集团公司第四十九研究所 | A kind of silicon micro-resonance type presser sensor chip resonator based on SOI |
| CN109883579A (en) * | 2019-01-23 | 2019-06-14 | 西安交通大学 | A kind of double H-type is by micro- resonance pressure sensor chip of straining beam silicon and preparation method thereof |
| CN111289155A (en) * | 2020-02-26 | 2020-06-16 | 西安交通大学 | In-plane vibration silicon micro-resonance type pressure sensor based on electromagnetic excitation piezoresistive detection |
| CN113697765A (en) * | 2021-08-25 | 2021-11-26 | 中国电子科技集团公司第四十九研究所 | Differential pressure resonance pressure sensitive chip probe of vacuum packaging structure and packaging method |
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| CN104568238A (en) * | 2014-12-08 | 2015-04-29 | 太原航空仪表有限公司 | Electromagnetic excitation resonant diaphragm pressure sensor |
| CN104535251B (en) * | 2015-01-12 | 2017-02-22 | 中国科学院电子学研究所 | Temperature self-compensating method and measuring mode for double-resonator pressure sensor |
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| CN105203234A (en) * | 2015-09-18 | 2015-12-30 | 中国科学院电子学研究所 | Resonant type pressure sensor |
| CN109642840B (en) * | 2016-08-03 | 2020-11-24 | ams有限公司 | Pressure sensor module |
| CN109642840A (en) * | 2016-08-03 | 2019-04-16 | ams有限公司 | Pressure sensor module |
| US11293821B2 (en) | 2016-08-03 | 2022-04-05 | Sciosense B.V. | Pressure sensor module |
| CN106887417A (en) * | 2017-02-15 | 2017-06-23 | 西安赛创半导体有限公司 | A kind of silicon oscillator based on bonded seal technology |
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| CN108254106B (en) * | 2018-01-30 | 2020-05-19 | 中国科学院半导体研究所 | Preparation method of silicon-glass-silicon four-layer structure resonant MEMS pressure sensor |
| CN109883579A (en) * | 2019-01-23 | 2019-06-14 | 西安交通大学 | A kind of double H-type is by micro- resonance pressure sensor chip of straining beam silicon and preparation method thereof |
| CN109883603B (en) * | 2019-03-13 | 2020-11-06 | 中国电子科技集团公司第四十九研究所 | Silicon micro-resonance type pressure sensitive chip resonator based on SOI |
| CN109883603A (en) * | 2019-03-13 | 2019-06-14 | 中国电子科技集团公司第四十九研究所 | A kind of silicon micro-resonance type presser sensor chip resonator based on SOI |
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| CN113697765B (en) * | 2021-08-25 | 2023-10-13 | 中国电子科技集团公司第四十九研究所 | Vacuum packaging structure differential pressure resonance pressure sensitive chip probe and packaging method |
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