CN111289155A - In-plane vibration silicon micro-resonance type pressure sensor based on electromagnetic excitation piezoresistive detection - Google Patents
In-plane vibration silicon micro-resonance type pressure sensor based on electromagnetic excitation piezoresistive detection Download PDFInfo
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- CN111289155A CN111289155A CN202010121079.9A CN202010121079A CN111289155A CN 111289155 A CN111289155 A CN 111289155A CN 202010121079 A CN202010121079 A CN 202010121079A CN 111289155 A CN111289155 A CN 111289155A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
- G01L1/183—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material by measuring variations of frequency of vibrating piezo-resistive material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
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Abstract
The invention discloses an in-plane vibration silicon micro-resonance type pressure sensor based on electromagnetic excitation piezoresistive detection, which is based on a double-H-shaped resonance beam symmetric coupling design and comprises a resonator and a pressure sensitive film, wherein the resonator is connected with the pressure sensitive film through an anchor point, the resonator comprises a resonance beam, a coupling beam and a vibration pickup beam, the pressure sensitive film drives the anchor point to move after being subjected to pressure load, the anchor point transmits deformation to the resonance beam, and the internal stress of the resonance beam is changed, so that the inherent frequency of the resonance beam is changed. Excitation lines are arranged on the resonant beams on the two sides, alternating current is conducted inside the excitation lines, Lorentz forces in opposite directions are generated in a permanent magnetic field, and the resonant beam driving is completed. The vibration pickup beam is arranged on the inner side of the coupling beam, when the resonator is in a working mode, the resonance beam generates relative motion, the coupling beam drives the vibration pickup beam to deform, so that the internal stress of the piezoresistor on the vibration pickup beam is changed, the resistance value of the piezoresistor is changed accordingly, and the resonance frequency pickup is completed by detecting a resistance signal.
Description
Technical Field
The invention belongs to the technical field of micro-nano sensors, and particularly relates to an in-plane vibration resonant pressure sensor chip based on electromagnetic excitation piezoresistive detection.
Background
The silicon micro-resonance type pressure sensor is the pressure sensor with the highest precision at present, and indirectly measures pressure by detecting the natural frequency of a resonance structure, and is output in a quasi-digital mode. The precision of the device is mainly influenced by mechanical characteristics of a mechanical structure, so that the device has strong anti-interference capability and stable performance. In addition, the silicon micro-resonance type pressure sensor also has the advantages of wide frequency band, compact structure, low power consumption, small volume, light weight, mass production and the like, and is always the key point of research of scientific research institutions of various countries. The silicon micro-resonance type pressure sensor can be applied to the fields of airborne atmospheric data testing systems, aviation atmospheric data check meters, cabin pressure testing, aerospace ground testing systems, high-performance wind tunnels and the like, can be made into pressure probes embedded into machine bodies, wings and the like for distributed pressure measurement, and is a core device of heavy engineering such as large-scale transport planes, novel fighters, aerospace vehicles, cruise missiles, aircraft carriers, helicopters and unmanned aerial vehicles.
In the development of silicon micro-resonance type pressure sensors, countries such as the united kingdom, japan, france and the united states have achieved a series of results. There are two major commercial silicon micro-resonant pressure sensors available in large quantities, namely DRUCK corporation, uk and yokogawa electric corporation, japan. The silicon micro-resonance type pressure sensor of DRUCK company in UK is mainly in an electrostatic excitation and piezoresistive detection mode, and the sensitive part of the silicon micro-resonance type pressure sensor mainly comprises a resonance layer, an anchor point, a pressure sensitive membrane and a frame fixed on the periphery, wherein a harmonic oscillator is obtained by adopting a concentrated boron self-stop etching technology, the comprehensive precision is better than 0.01 percent FS, and the measurement range is 10-1300 mbar. The silicon micro-resonance type pressure sensor of the Japan Yanghe motor company adopts the working mode of electromagnetic excitation and electromagnetic detection, the resonance layer is obtained by utilizing the selective epitaxial growth and the sacrificial layer technology, the resonance beam is positioned in the vacuum cavity and embedded on the upper surface of the pressure sensitive membrane, the comprehensive precision is better than 0.02 percent FS, and the temperature coefficient is less than 5 ppm/K.
Most of the existing resonant pressure sensors adopt electrostatic excitation, the electrostatic excitation is generally driven by interdigital electrodes, the driving capability is small, the normal driving can be completed only by introducing higher direct current bias voltage and alternating current voltage, and the introduction of the interdigital electrodes can introduce deep silicon etching processing with high depth-to-width ratio, so that the processing difficulty is improved; in most of the electrostatic excitation resonant sensors, displacement fluctuation outside the movable electrode surface is easily caused after loading, so that the closed-loop control difficulty is increased, and other excitation methods need to be developed to solve the problems. Meanwhile, the capacitance vibration pickup signal of the capacitance vibration pickup resonant pressure sensor widely researched at home and abroad is very weak, and can be completed only by being equipped with a large-multiple amplifying circuit, the crosstalk of signals is very easily caused between an excitation electrode and a vibration pickup electrode, the vibration pickup is difficult, and the piezoresistive vibration pickup has higher signal anti-interference capability, and the signals can be effectively picked up without external amplification.
Disclosure of Invention
The invention provides an in-plane vibration silicon micro-resonance type pressure sensor based on electromagnetic excitation piezoresistive detection, which improves the anti-interference characteristic of signals and the measurement stability of the sensor on the premise of ensuring the driving performance of a resonance beam, and simultaneously reduces the processing difficulty.
In order to achieve the purpose, the in-plane vibration silicon micro-resonance type pressure sensor based on electromagnetic excitation piezoresistive detection is based on a double H-shaped resonance beam symmetric coupling design, wherein an H-shaped resonance beam comprises a first excitation beam, a second excitation beam, a first signal output beam and a second signal output beam, and comprises a resonator and a pressure sensitive film, and the resonator is connected with the pressure sensitive film through an anchor point; the resonator comprises a coupling beam, two vibration pickup beams are fixed on the inner wall of the coupling beam, and a first mass block and a second mass block are symmetrically arranged on two sides of the coupling beam; the two ends of the first mass block are connected with a first excitation beam and a first signal output beam respectively, the two first excitation beams connected to the two ends of the first mass block are arranged oppositely, and the two first signal output beams connected to the two ends of the first mass block are arranged oppositely; the two ends of the second mass block are both connected with a second excitation beam and a second signal output beam, the two second excitation beams connected to the two ends of the second mass block are oppositely arranged, and the two second signal output beams connected to the two ends of the second mass block are oppositely arranged; excitation circuits are arranged on the first excitation beam and the second excitation beam and connected with a sensor external drive circuit, alternating current is conducted in the excitation circuits, piezoresistive signal output lines are uniformly distributed on the first signal output beam and the second signal output beam, and direct current is conducted on the piezoresistive signal output lines and used for resistance signal detection; the first excitation beam and the first signal output beam which are positioned at the same end of the first mass block and the second mass block are fixedly connected with the same torsional rigid body and then connected with the anchor point through the torsional rigid body.
Furthermore, a first connecting beam is arranged between the first excitation beam and the first signal output beam, and a second connecting beam is arranged between the second excitation beam and the second signal output beam.
Furthermore, both ends of the torsional rigid body are connected with extension rigid bodies, and the tail ends of the extension rigid bodies are connected with anchor points.
Further, the piezoresistive and actuation signals are connected to external control circuitry via metal leads disposed on the plurality of folded beams.
Furthermore, grooves are formed in two ends of the first mass block and two ends of the second mass block, and one ends of the first excitation beam, the first signal output beam, the second excitation beam and the second signal output beam extend into the grooves.
Furthermore, the vibration pickup beams are symmetrically arranged by taking the central line of the coupling beam as a symmetrical axis.
Compared with the prior art, the invention has at least the following beneficial technical effects:
through the symmetrical coupling design of the double H-shaped resonant beams, the structural damping of the resonator can be effectively reduced, so that the quality factor of the resonator is improved; the two ends of the resonator are fixed by adopting anchor points, the anchor points on the two sides are respectively connected with the pressure sensitive film, and when the diaphragm deforms, the anchor points are driven to displace, so that the internal stress of the resonant beam is changed; the excitation beam is provided with an excitation line which is fixed in an external fixed magnetic field and is internally provided with alternating current for exciting the resonator to be in a resonance state. The directions of alternating currents led into the excitation beams on the two symmetrical sides of the resonator are opposite, when the alternating currents cut magnetic induction lines in a constant permanent magnet magnetic field, alternating Lorentz forces are generated, the directions of the Lorentz forces on the two sides are opposite, and accordingly driving of in-plane vibration of the resonator is achieved.
Furthermore, the overall size of the sensor can be effectively reduced by twisting the rigid body and extending the rigid body, the resonant beam can extend to the outside of the anchor point, and the distance between the anchor points is reduced under the condition of the resonant beam with determined length, so that the size of the pressure sensitive membrane is reduced.
Furthermore, a first connecting beam is arranged between the first excitation beam and the first signal output beam, a second connecting beam is arranged between the second excitation beam and the second signal output beam, the connecting beam is used for eliminating stress output of applied pressure load transmitted to the vibration pickup beam through the anchor point, and noise from the load in the vibration pickup signal is reduced.
Drawings
FIG. 1 is an overall schematic view of the present invention;
FIG. 2 is an enlarged view of a portion of FIG. 1 at A;
FIG. 3 is a partial enlarged view of FIG. 2 at B;
FIG. 4 is a perspective view of the present invention;
FIG. 5 is an enlarged view of a portion of FIG. 4;
fig. 6 is a working principle diagram of the coupling beam and the vibration pickup beam.
In the drawings: 1. the torsional rigid body, 2, the extension rigid body, 3, the anchor point, 41, the first mass block, 42, the second mass block, 5, the H-shaped resonant beam, 51, the first excitation beam, 52, the second excitation beam, 53, the first signal output beam, 54, the second signal output beam, 6, the fold beam, 9, the vibration pickup beam, 10, the coupling beam, 11, the outer frame, 12, the first connecting beam, 13, and the second connecting beam.
Detailed Description
In order to make the objects and technical solutions of the present invention clearer and easier to understand. The present invention will be described in further detail with reference to the following drawings and examples, wherein the specific examples are provided for illustrative purposes only and are not intended to limit the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified. In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1 to 5, an in-plane vibration silicon micro-resonance type pressure sensor based on electromagnetic excitation piezoresistive detection is based on a double-H-type resonance beam 5 symmetric coupling design, wherein the H-type resonance beam 5 is coupled through a coupling beam 10 and mainly comprises a torsion rigid body 1, an extension rigid body 2, an anchor point 3, a mass block, the H-type resonance beam 5, a vibration pickup beam 9 and the coupling beam 10. The anchor point 3 is fixed on the pressure sensitive film as a connection point, the anchor point 3 is used for connecting the resonator and the pressure sensitive film, the pressure sensitive film drives the anchor point 3 to move after being subjected to a pressure load, the anchor point 3 transmits deformation to the H-shaped resonant beam 5 through the extension rigid body 2 and the torsion rigid body 1, and the internal stress of the H-shaped resonant beam 5 is changed, so that the natural frequency of the resonator and the applied pressure load are linearly changed, wherein the H-shaped resonant beam 5 comprises a first excitation beam 51, a first signal output beam 53, a second excitation beam 52 and a second signal output beam 54, piezoresistive signal output lines are arranged on the first signal output beam 53 and the second signal output beam 54, and the piezoresistive signal output lines are aluminum lines or gold lines.
Referring to fig. 3, the excitation lines are aluminum wires or gold wires, and are mainly disposed on the first excitation beam 51 and the second excitation beam 52, alternating currents are conducted in the excitation lines, the directions of the alternating currents conducted by the excitation lines on the first excitation beam 51 and the second excitation beam 52 are opposite, the excitation lines generate alternating lorentz forces in magnetic fields generated by external permanent magnets, and therefore high-frequency alternating driving forces in opposite directions are generated on the first excitation beam 51 and the second excitation beam 52, and resonant beam driving is completed; wherein the permanent magnet magnetic field direction is perpendicular to the resonator plane. The coupling beam 10 makes the H-type resonant beams 5 on both sides complete vibration coupling through coupling.
Referring to fig. 4, the first mass block 41 and the second mass block 42 are provided with grooves at both ends, and one ends of the first excitation beam 51 and the first signal output beam 53, and the second excitation beam 52 and the second signal output beam 54 extend into the grooves.
Referring to fig. 2 to 5, two opposite vibration pickup beams 9 are fixedly connected to the inner wall of the coupling beam 10, and a first mass block 41 and a second mass block 42 are symmetrically arranged on two sides of the coupling beam 10; the two ends of the first mass block 41 are connected with a first excitation beam 51 and a first signal output beam 53, the two first excitation beams 51 connected to the two ends of the first mass block 41 are arranged oppositely, and the two first signal output beams 53 connected to the two ends of the first mass block 41 are arranged oppositely; a first connecting beam 12 is provided between the first excitation beam 51 and the first signal output beam 53; the two ends of the second mass block 42 are connected with a second excitation beam 52 and a second signal output beam 54, the two second excitation beams 52 connected to the two ends of the second mass block 42 are arranged oppositely, and the two second signal output beams 54 connected to the two ends of the second mass block 42 are arranged oppositely; a second connection beam 13 is provided between the second excitation beam 52 and the second signal output beam 54; the first excitation beam 51 and the first signal output beam 53 which are positioned at the same end of the two mass blocks are fixedly connected with the same torsional rigid body 1, the first excitation beam 51 and the first signal output beam 53 are parallel to each other, the first excitation beam 51 and the torsional rigid body 1 are perpendicular to each other, the two ends of the torsional rigid body 1 are both connected with extension rigid bodies 2, and the tail ends of the extension rigid bodies 2 are connected with anchor points 3.
The outer side of the torsional rigid body 1 is fixedly connected with a first end of the folded beam 6, and a second end of the folded beam 6 is connected to the outer frame 11.
As shown in fig. 6, the vibration pickup beam 9 is disposed on the coupling beam 10, when the resonator is in a working mode, the two groups of H-type resonance beams 5 on both sides of the coupling beam 10 generate relative motion, the coupling beam 10 deforms to drive the vibration pickup beam 9 to generate straight-pull straight-press deformation, so as to change the internal stress of the vibration pickup beam 9, and the resistance value of the vibration pickup resistor fabricated on the vibration pickup beam 9 is changed based on the piezoresistive effect, so that vibration pickup of the resonance frequency of the resonator can be completed by detecting the change of the resistance value of the vibration pickup resistor on the vibration pickup beam 9. In the adjacent modes, the coupling beam 10 does not deform, and the resistance value of the vibration pickup resistor on the vibration pickup beam 9 does not change and output, so that the interference of other modes can be effectively avoided. The adjacent modes refer to the same-side internal vibration mode of the two double H-shaped resonant beams and the same-side external vibration mode of the two double H-shaped resonant beams.
The working principle of the invention is as follows:
when pressure acts on the pressure sensitive membrane of the pressure sensitive membrane, the pressure sensitive membrane drives the anchor point to move, the anchor point is transmitted to the resonance beam through the extension beam and the torsion beam, the internal stress of the resonance beam is changed, so that the natural frequency of the resonance beam is changed, and the pressure applied to the pressure sensitive membrane is measured by detecting the resonance frequency of the resonator; the in-plane vibration silicon micro-resonance type pressure sensor based on electromagnetic excitation piezoresistive detection adopts a symmetrical working mode, a resonator realizes resonator vibration through electromagnetic excitation, reverse alternating current is applied to excitation beams on two sides of the resonator, two H-shaped resonance beams generate alternating Lorentz force in a fixed magnetic field, the resonator is driven to be in a resonance state, the resonator is accordingly enabled to work in the symmetrical vibration mode, mass blocks on two symmetrical sides are connected through a middle coupling beam, two vibration pickup beams are arranged on the inner side of the coupling beam, whether the resonator reaches the resonance state is sensed through detecting resistance value changes of the vibration pickup beams, and after the resonance state is reached, the pressure is indirectly calculated according to vibration pickup frequency; compared with the modes of electrostatic driving and the like, the electromagnetic excitation method can effectively improve the driving capability of the resonator, and simultaneously, because the two H-shaped resonance beams are communicated with alternating currents in opposite directions, Lorentz forces in opposite directions are generated on the excitation beams at two sides, the adjacent modes cannot be driven, and finally, the interference of other modes on the sensor is avoided; the straight-pull direct-pressure piezoresistive vibration pickup method is characterized in that the coupling beam is deformed to drive the vibration pickup beam to generate straight-pull direct-pressure deformation when the resonant beam vibrates symmetrically, the stress state on the vibration pickup beam is changed, the resistance value of the vibration pickup resistor on the vibration pickup beam is changed, the detection of the resonant frequency can be completed through the detection of the resistance value of the vibration pickup resistor, the anti-interference characteristic of signals can be effectively improved through the method, and the measurement stability of a sensor is improved.
The technical indexes which can be achieved by the preferred embodiment of the invention are as follows:
1) pressure range: 0-300 kPa;
2) and (3) measuring precision: 0.01% FS;
3) response time: <100 ms;
4) overpressure protection pressure: 200% FS;
5) the use temperature range is as follows: -50 ℃ to 85 ℃.
The above description is only one embodiment of the present invention, and not all or only one embodiment, and any equivalent alterations to the technical solutions of the present invention, which are made by those skilled in the art through reading the present specification, are covered by the claims of the present invention.
Claims (6)
1. The in-plane vibration silicon micro-resonance type pressure sensor based on electromagnetic excitation piezoresistive detection is characterized in that based on a double H-shaped resonance beam (5) symmetrical coupling design, the H-shaped resonance beam comprises a first excitation beam (51), a second excitation beam (52), a first signal output beam (53) and a second signal output beam (54) and comprises a resonator and a pressure sensitive film, and the resonator is connected with the pressure sensitive film through an anchor point (3); the resonator comprises a coupling beam (10), two vibration pickup beams (9) are fixed on the inner wall of the coupling beam (10), and a first mass block (41) and a second mass block (42) are symmetrically arranged on two sides of the coupling beam (10); the two ends of the first mass block (41) are connected with a first excitation beam (51) and a first signal output beam (53), the two first excitation beams (51) connected to the two ends of the first mass block (41) are arranged oppositely, and the two first signal output beams (53) connected to the two ends of the first mass block (41) are arranged oppositely; two ends of the second mass block (42) are connected with a second excitation beam (52) and a second signal output beam (54), the two second excitation beams (52) connected to the two ends of the second mass block (42) are arranged oppositely, and the two second signal output beams (54) connected to the two ends of the second mass block (42) are arranged oppositely; excitation circuits are arranged on the first excitation beam (51) and the second excitation beam (52), the excitation circuits are connected with a sensor external drive circuit, alternating current is conducted in the excitation circuits, piezoresistive signal output lines are uniformly distributed on the first signal output beam (53) and the second signal output beam (54), and direct current is conducted on the piezoresistive signal output lines and used for resistance signal detection; the first excitation beam (51) and the first signal output beam (53) which are positioned at the same end of the first mass block (41) and the second mass block (42) are fixedly connected with the same torsional rigid body (1) and then are connected with the anchor point (3) through the torsional rigid body (1).
2. The in-plane vibrating silicon micro-resonator pressure sensor based on electromagnetic excitation piezoresistive detection according to claim 1, wherein a first connecting beam (12) is arranged between the first excitation beam (51) and the first signal output beam (53), and a second connecting beam (13) is arranged between the second excitation beam (52) and the second signal output beam (54).
3. The in-plane vibration silicon micro-resonance type pressure sensor based on electromagnetic excitation piezoresistive detection according to claim 1, wherein the torsional rigid body (1) is connected with the extension rigid body (2) at both ends, and the anchor point (3) is connected with the tail end of the extension rigid body (2).
4. The in-plane vibrating silicon microresonator pressure sensor based on electromagnetically actuated piezoresistive detection as claimed in claim 1, wherein the piezoresistive and actuation signals are connected to an external control circuit via metal wires arranged on the plurality of folded beams (6).
5. The in-plane vibrating silicon micro-resonance type pressure sensor based on electromagnetic excitation piezoresistive detection according to claim 1, wherein the first mass block (41) and the second mass block (42) are each provided with a groove at both ends, and one end of the first excitation beam (51), the first signal output beam (53), the second excitation beam (52) and the second signal output beam (54) extends into the grooves.
6. The in-plane vibrating silicon micro-resonance type pressure sensor based on electromagnetic excitation piezoresistive detection according to claim 1, wherein the pick-up beams (9) are arranged symmetrically with respect to the center line of the coupling beam (10).
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| CN114689224A (en) * | 2020-12-31 | 2022-07-01 | 中国科学院微电子研究所 | Differential pressure type MEMS piezoresistive sensor and self-testing method thereof |
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| CN113098427B (en) * | 2021-03-25 | 2023-07-28 | 西安交通大学 | Phonon frequency comb generation method based on MEMS resonator coupling vibrator |
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| CN114993520A (en) * | 2022-05-31 | 2022-09-02 | 西安交通大学 | Gauge pressure type resonance pressure sensor and preparation method thereof |
| CN114993520B (en) * | 2022-05-31 | 2023-08-18 | 西安交通大学 | Gauge pressure type resonant pressure sensor and preparation method thereof |
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