CN109752120B - Piezoresistive vibration pickup micro resonator, vibration exciting/vibration pickup circuit and pressure sensor - Google Patents

Piezoresistive vibration pickup micro resonator, vibration exciting/vibration pickup circuit and pressure sensor Download PDF

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Publication number
CN109752120B
CN109752120B CN201910056907.2A CN201910056907A CN109752120B CN 109752120 B CN109752120 B CN 109752120B CN 201910056907 A CN201910056907 A CN 201910056907A CN 109752120 B CN109752120 B CN 109752120B
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vibration pickup
piezoresistive
microresonator
resonator
vibration
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CN109752120A (en
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陈德勇
鲁毓岚
王军波
谢波
侍小青
李亚东
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Institute of Electronics of CAS
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Abstract

The present disclosure provides a piezoresistive vibration pickup micro-resonator, an excitation/vibration pickup circuit and a pressure sensor, the piezoresistive vibration pickup micro-resonator comprising: the anchor structure and the movable structure are arranged on the anchor structure; the movable structure includes: the device comprises an H-shaped beam structure, a vibration pickup end, a driving electrode and a piezoresistor; the two ends of the two single beams are respectively provided with a strip-shaped groove, the strip-shaped grooves extend to the vibration pickup end, the vibration pickup end is divided into a three-section structure of a resonance signal detection section, a grounding section and a resonance signal detection section, and the piezoresistor is arranged at the joint of the single beams and the resonance signal detection section. The piezoresistive vibration pickup micro resonator, the excitation/vibration pickup circuit and the pressure sensor provided by the disclosure adopt a piezoresistive vibration pickup mode, so that the output signal intensity of the resonator is improved.

Description

Piezoresistive vibration pickup micro resonator, vibration exciting/vibration pickup circuit and pressure sensor
Technical Field
The disclosure relates to the technical field of MEMS (micro electro mechanical systems) microsensors, in particular to a piezoresistive vibration pickup microresonator, an excitation/vibration pickup circuit and a pressure sensor.
Background
The micro-resonator is a micro-structure which is manufactured through a Micro Electro Mechanical System (MEMS) and generates resonance frequency, has the advantages of small volume, light weight, compact structure, high resolution, high precision, convenience in data transmission processing and storage and the like, and is widely applied to time reference, signal filtering and various sensors. The micro-resonator is a movable structure, and when the micro-resonator works, the micro-resonator is vibrated by means of external electric field force or magnetic field force and the like, and then the resonance frequency of the micro-resonator is detected by some specific vibration pickup modes.
The sensor which is realized by taking the micro-resonator as a main sensitive element and the principle that the inherent resonance characteristic of the resonator changes along with the measured quantity is called a resonant sensor. The resonant sensor is used as a periodic signal output (quasi-digital signal) and can be converted into a digital signal which is easy to interface with a microprocessor only by using a simple digital circuit; meanwhile, the repeatability, the resolution, the stability and the like of the resonance sensitive element are very good, so that the comprehensive precision of the resonance sensor is generally higher.
The resonant pressure sensor is a device or a device which takes a resonator as a sensitive element and indirectly measures pressure by detecting the change of the natural frequency of the resonator along with the external pressure. The sensor outputs frequency signals, the accuracy of the frequency signals cannot be reduced through long-distance transmission, and the frequency signals can be conveniently communicated with an upper computer without AD conversion. The resonant pressure sensor has good linearity, resolution, stability and extremely high precision, and is widely applied to important fields of aerospace, industrial control/calibration, meteorological monitoring and the like.
However, in the process of implementing the present disclosure, the inventors of the present application found that the micro-resonator may have technical problems of poor interference resistance, weak output signal strength, easy generation of excitation voltage and nonlinear vibration.
Disclosure of Invention
BRIEF SUMMARY OF THE PRESENT DISCLOSURE
Technical problem to be solved
Based on the technical problems, the present disclosure provides a piezoresistive vibration pickup micro-resonator, an excitation/vibration pickup circuit, and a pressure sensor, so as to alleviate technical problems in the prior art that the micro-resonator has poor anti-interference capability, weak output signal strength, and is easy to generate excitation voltage and nonlinear vibration.
(II) technical scheme
According to one aspect of the present disclosure, there is provided a piezoresistive vibration pickup microresonator comprising: an anchor point structure; and a movable structure disposed above the anchor structure, comprising: an H-beam structure; the end of shaking, set up in the tip of H-shaped beam structure, and respectively with two monospar of H-shaped beam structure one end are connected, divide into: a ground section and a resonant signal detection section; the two driving electrodes are respectively arranged on two sides of the H-shaped beam structure; and a piezoresistor formed on the H-beam structure in a direction of a single beam of the H-beam structure; the two ends of the two single beams are respectively provided with a strip-shaped groove, the strip-shaped grooves extend towards the vibration pickup end, the vibration pickup end is divided into a three-section structure of a resonance signal detection section, a grounding section and a resonance signal detection section, and the piezoresistor is arranged at the joint of the single beam and the resonance signal detection section.
In some embodiments of the disclosure, wherein: the two vibration pickup ends are respectively arranged at two ends of the H-shaped beam structure; the piezoresistors comprise four piezoresistors which are respectively formed on the two single beams.
In some embodiments of the present disclosure, the piezoresistors are etched on the single beam in a direction of the single beam by a deep reactive ion etching technique.
According to another aspect of the present disclosure, there is also provided a piezoresistive vibration pickup microresonator excitation/pickup circuit, comprising: the piezoresistive vibration pickup micro-resonator provided by the disclosure, a direct current bias voltage source and two alternating current driving voltage sources in opposite directions; the two driving electrodes are connected with a direct current bias voltage source, the two driving electrodes are also connected with two alternating current driving voltage sources in opposite directions respectively, and the moving directions of the two single beams of the H-shaped beam structure are the same; at one of the vibration pickup ends: the current sequentially passes through the resonance signal detection section, the piezoresistor and the grounding section along the flowing direction of the current, returns to the negative electrode of the power supply, and leads out the electric signal on the piezoresistor through the resonance signal detection section.
According to yet another aspect of the present disclosure, there is also provided a piezoresistive vibration pickup microresonator pressure sensor, comprising: an SOI layer which is divided into the following layers from bottom to top in sequence: a substrate layer on which a pressure sensitive membrane is disposed; the oxygen burying layer is used for forming an anchor point structure of the piezoresistive vibration pickup micro resonator provided by the disclosure and is fixedly connected with the pressure sensitive film; and a device layer for forming a movable structure of the piezoresistive vibration pickup microresonator provided by the present disclosure, and connected to the buried oxide layer; and the glass cover plate is buckled on the SOI layer and used for realizing the vacuum packaging of the piezoresistive vibration pickup micro resonator.
In some embodiments of the present disclosure, the movable structure comprises at least two.
In some embodiments of the present disclosure, the device layer further comprises: an electrode partitioned into a plurality of portions by isolation grooves; the grounding section, the resonance signal detection section and the driving electrode are respectively connected with different electrodes one by one through an electric connection structure.
In some embodiments of the disclosure, wherein: the electrodes are arranged in a square ring shape; the movable structure comprises two movable structures; the two movable structures are oppositely arranged on the diagonal line of the square ring, and one vibration pickup end of each movable structure is respectively connected with the two diagonal lines of the square ring.
In some embodiments of the present disclosure, a bonding frame is sleeved outside the electrode, and the glass cover plate is fastened to the bonding frame.
In some embodiments of the disclosure, wherein: a cavity is formed in the position, corresponding to the ring hole of the square ring, of the glass cover plate; and a getter is arranged in the cavity and used for absorbing gas generated in the bonding of the movable structure.
(III) advantageous effects
According to the technical scheme, the piezoresistive vibration pickup micro resonator, the excitation/vibration pickup circuit and the pressure sensor have one or part of the following beneficial effects:
(1) the piezoresistive vibration pickup mode is adopted, so that the output signal strength of the resonator is improved;
(2) the mode of syntropy vibration of the resonator beams is adopted, and the excitation voltage of the resonator is reduced;
(3) the reverse alternating voltage is adopted for driving, so that the nonlinear vibration of the resonator is reduced;
(4) the multi-resonator type sensor manufactured based on the resonator has low process complexity, can represent temperature parameters, can effectively improve the temperature self-compensation of the sensor, and improves the comprehensive precision of the sensor.
Drawings
Fig. 1 is a schematic structural diagram of a piezoresistive vibration pickup microresonator provided by an embodiment of the disclosure.
Fig. 2 is a schematic diagram of a piezoresistive vibration pickup micro-resonator excitation/vibration pickup circuit according to an embodiment of the disclosure.
Fig. 3 is a schematic structural diagram of a piezoresistive vibration pickup micro-resonant pressure sensor according to an embodiment of the present disclosure.
[ description of main reference numerals in the drawings ] of the embodiments of the present disclosure
100-anchor point structure;
200-a movable structure;
210-an H-beam configuration;
211-bar shaped grooves;
220-vibration pickup end;
221-a ground segment;
222-a resonant signal detection section;
230-a drive electrode;
240-a voltage dependent resistor;
a 300-SOI layer;
310-a device layer;
311-electrodes;
312-isolation trenches;
313 — an electrical connection structure;
314-a bonded bezel;
320-buried oxide layer;
330-a substrate layer;
331-a pressure sensitive membrane;
400-glass cover plate;
410-a cavity;
420-getter.
Detailed Description
The piezoresistive vibration pickup micro resonator, the excitation/vibration pickup circuit and the pressure sensor adopt a piezoresistive vibration pickup mode, so that the output signal intensity of the resonator is improved; the resonator beams vibrate in the same direction, so that the excitation voltage of the resonator is reduced; the reverse alternating voltage is adopted for driving, so that the nonlinear vibration of the resonator is reduced; the multi-resonator type sensor manufactured based on the resonator has low process complexity, can represent temperature parameters, can effectively improve the temperature self-compensation of the sensor, and improves the comprehensive precision of the sensor.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
According to one aspect of the present disclosure, there is provided a piezoresistive vibration pickup microresonator, as shown in FIG. 1, comprising: an anchor structure 100 and a moveable structure 200 disposed over the anchor structure; the movable structure 200 includes: an H-beam structure 210, a vibration pickup end 220, two drive electrodes 230, and a piezoresistor 240; the vibration pickup end 220 is disposed at the end of the H-shaped beam structure 210, and is connected to two single beams at one end of the H-shaped beam structure 210, and the vibration pickup end 220 is divided into: a ground section 221 and a resonance signal detection section 222; two driving electrodes 230 are respectively disposed on both sides of the H-beam structure 210; piezoresistors 240 are formed on the H-beam structure 210 in the direction of a single beam in the H-beam structure 210; the two ends of the two single beams are respectively provided with a strip-shaped groove 211, the strip-shaped grooves 211 extend towards the vibration pickup end 220, the vibration pickup end 220 is divided into three sections of structures including a resonance signal detection section 222, a grounding section 221 and a resonance signal detection section 222, and the piezoresistor 240 is arranged at the joint of the single beam and the resonance signal detection section 222.
In some embodiments of the present disclosure, as shown in fig. 1, wherein: the vibration pickup ends 220 comprise two vibration pickup ends 220, and the two vibration pickup ends 220 are respectively arranged at two ends of the H-shaped beam structure 210; the piezoresistors 240 comprise four, and the four piezoresistors 240 are respectively formed on the two single beams.
In some embodiments of the present disclosure, the piezoresistors 240 are etched on the single beam in the direction of the single beam by a deep reactive ion etching technique.
According to another aspect of the present disclosure, there is also provided a piezoresistive vibration pickup micro-resonator excitation/pickup circuit, as shown in fig. 2, comprising: the piezoresistive vibration pickup micro resonator provided by the embodiment of the disclosure, a direct current bias voltage source and two alternating current driving voltage sources with opposite directions; wherein, both driving electrodes 230 are connected with a dc bias voltage source, and the two driving electrodes 230 are also connected with two ac driving voltage sources with opposite directions, respectively, and the moving directions of the two single beams of the H-beam structure 210 are the same; on one vibration pickup end 220: the current passes through the resonant signal detection section 222, the piezoresistor 240 and the grounding section 221 in sequence along the flowing direction, returns to the negative electrode of the power supply, and leads out the electric signal on the piezoresistor 240 through the resonant signal detection section 222.
In some embodiments of the present disclosure, the resonator uses an electrostatically excited resonator to create a simple resonance point, and a piezoresistive is used to pick up the resonant frequency of the resonator. The excitation/vibration pickup principle is as follows: a DC bias voltage V is applied to the driving electrodes 230 on both sides of the H-beam structure 210DCAnd applying AC drive voltages V, respectivelyACand-VAC. The two single beams of the H-beam structure 210 have the same direction of motion under the action of electrostatic force, driving the resonant beam to vibrate. At the vibration pickup end 220, the grounding section 221 is grounded, the resonance signal detection section 222 introduces an electric signal to the piezoresistor 240 in a series resistor mode, the piezoresistors 240 on the two single beams at one end of the H-shaped beam structure 210 introduce the electric signal to the instrumentation amplifier through the resonance signal detection section 222, the resonance frequency of the resonator is picked up by detecting the voltage signal change frequency at the two ends of the piezoresistor 240, and the vibration excitation voltage of the resonator can be reduced by adopting a mode that the beams of the resonator vibrate in the same direction; meanwhile, the reverse alternating voltage is adopted for driving, and the nonlinear vibration of the resonator is reduced.
According to still another aspect of the present disclosure, there is also provided a piezoresistive vibration pickup micro-resonant pressure sensor, as shown in fig. 3, including: an SOI layer 300 and a glass cover 400; an SOI layer which is divided into the following layers from bottom to top in sequence: a substrate layer 330, a buried oxide layer 320, and a device layer 310; the substrate layer 330 is provided with a pressure sensitive membrane 331; the buried oxide layer 320 is used for forming the anchor point structure 100 of the piezoresistive vibration pickup micro-resonator provided by the embodiment of the disclosure and is fixedly connected with the pressure sensitive film 331; device layer 310 is used to form the movable structure 200 of the piezoresistive vibration pickup microresonator provided by the embodiments of the present disclosure, and is connected to buried oxide layer 320; the glass cover plate 400 is buckled on the SOI layer 300 and used for realizing vacuum packaging of the piezoresistive vibration-pickup micro-resonator, when pressure acts on the pressure-sensitive film 331, the pressure-sensitive film 331 generates stress and conducts the stress to the resonator, so that the frequency of the resonator is changed, and the piezoresistive vibration-pickup micro-resonator can be used for sensing the external pressure.
In some embodiments of the present disclosure, as shown in fig. 3, the movable structure 200 includes at least two.
In some embodiments of the present disclosure, as shown in fig. 3, the device layer 310 further includes an electrode 311, the electrode 311 being partitioned into a plurality of portions by isolation trenches 312; the ground section 221, the resonance signal detection section 222, and the driving electrode 230 are connected to different electrodes one by one through the electrical connection structure 313.
In some embodiments of the present disclosure, as shown in fig. 3, wherein: the electrode 311 is arranged in a square ring; the movable structure 200 includes two; two movable structures 200 are oppositely arranged on the diagonal line of the square ring, and one vibration pickup end 220 of each movable structure 200 is respectively connected with the two diagonal lines of the square ring.
In some embodiments of the present disclosure, as shown in fig. 3, a bonding frame 314 is sleeved on an outer side of the electrode 311, and the glass cover 400 is fastened on the bonding frame 314.
In some embodiments of the present disclosure, as shown in fig. 3, wherein: a cavity 410 is arranged on the glass cover plate 400 corresponding to the ring hole of the square ring; a getter 420 is disposed in the cavity 410 for absorbing gases generated during bonding of the movable structure 200.
From the above description, those skilled in the art should clearly recognize the piezoresistive vibration-pickup micro-resonator, the excitation/vibration-pickup circuit, and the pressure sensor provided in the embodiments of the present disclosure.
In summary, the piezoresistive vibration pickup micro-resonator, the excitation/vibration pickup circuit and the pressure sensor provided by the present disclosure have the advantages that the piezoresistor is manufactured on the micro-resonator, the resonance frequency of the resonator is measured by detecting the change of the piezoresistor, the output signal of the pressure sensor designed based on the resonator is large and stable, and the improvement of the pressure output precision of the sensor is facilitated.
It should be noted that the above definitions of the components and methods are not limited to the specific structures, shapes or modes mentioned in the embodiments, and those skilled in the art may easily modify or replace them, for example:
(1) the number of the resonant pressure sensors based on the resonator can be 1 or more;
(2) the piezoresistors for picking up vibration can be used in a plurality of 1 or more;
(3) the piezoresistor can be made by other types of etching, wet etching, laser processing, sand blasting and the like;
(4) the resonator driving electrode can be omitted and the electromagnetic excitation principle is adopted to drive the resonator to vibrate;
(5) the resonator driving mode can adopt comb capacitor driving;
(6) other types of resonant sensors, such as resonant accelerometers, etc., can be fabricated based on the resonator.
It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
The above-described embodiments are further intended to illustrate the objects, aspects and advantages of the present disclosure, and it should be understood that the above-described embodiments are only exemplary of the present disclosure and are not intended to limit the present disclosure, which may be modified within the spirit and scope of the present disclosure.

Claims (8)

1. A piezoresistive vibration pickup microresonator comprising:
an anchor point structure; and
a movable structure disposed above the anchor structure, comprising:
an H-beam structure;
the end of shaking, set up in the tip of H-shaped beam structure, and respectively with two monospar of H-shaped beam structure one end are connected, divide into: a ground section and a resonant signal detection section;
the two driving electrodes are respectively arranged on two sides of the H-shaped beam structure; and
the piezoresistor is formed on the H-shaped beam structure along the direction of a single beam in the H-shaped beam structure, and is formed by etching the piezoresistor on the single beam along the direction of the single beam through a deep reactive ion etching technology;
the two ends of the two single beams are respectively provided with a strip-shaped groove, the strip-shaped grooves extend towards the vibration pickup end, the vibration pickup end is divided into a three-section structure of a resonance signal detection section, a grounding section and a resonance signal detection section, and the piezoresistor is arranged at the connection position of the single beams and the resonance signal detection section;
the two vibration pickup ends are respectively arranged at two ends of the H-shaped beam structure;
the piezoresistors comprise four piezoresistors which are respectively formed on the two single beams.
2. A piezoresistive vibration pick-up microresonator excitation/pickup circuit, comprising:
a piezoresistive vibration pickup microresonator as claimed in claim 1, comprising a dc bias voltage source and two opposite ac drive voltage sources;
the two driving electrodes are connected with a direct current bias voltage source, the two driving electrodes are also connected with two alternating current driving voltage sources in opposite directions respectively, and the moving directions of the two single beams of the H-shaped beam structure are the same;
at one of the vibration pickup ends: the current sequentially passes through the resonance signal detection section, the piezoresistor and the grounding section along the flowing direction of the current, returns to the negative electrode of the power supply, and leads out the electric signal on the piezoresistor through the resonance signal detection section.
3. A piezoresistive vibration pickup microresonator pressure sensor comprising:
an SOI layer which is divided into the following layers from bottom to top in sequence:
a substrate layer on which a pressure sensitive membrane is disposed;
a buried oxide layer for forming an anchor point structure of the piezoresistive vibration pickup microresonator according to claim 1, and fixedly connected to the pressure sensitive membrane; and
a device layer for forming a movable structure of the piezoresistive vibration pickup microresonator of claim 1, and connected to the buried oxide layer; and
and the glass cover plate is buckled on the SOI layer and used for realizing the vacuum packaging of the piezoresistive vibration pickup micro resonator.
4. The piezoresistive vibration pickup microresonator pressure sensor of claim 3, wherein the moveable structure comprises at least two.
5. The piezoresistive vibration pickup microresonator pressure sensor of claim 4, the device layer further comprising: an electrode partitioned into a plurality of portions by isolation grooves;
the grounding section, the resonance signal detection section and the driving electrode are respectively connected with different electrodes one by one through an electric connection structure.
6. The piezoresistive vibration pickup microresonator pressure sensor of claim 5, wherein:
the electrodes are arranged in a square ring shape;
the movable structure comprises two movable structures;
the two movable structures are oppositely arranged on the diagonal line of the square ring, and one vibration pickup end of each movable structure is respectively connected with the two diagonal lines of the square ring.
7. The piezoresistive vibration-pickup microresonator pressure sensor of claim 6, wherein a bonding frame is sleeved outside the electrodes, and the glass cover plate is fastened on the bonding frame.
8. The piezoresistive vibration pickup microresonator pressure sensor of claim 7, wherein:
a cavity is formed in the position, corresponding to the ring hole of the square ring, of the glass cover plate;
and a getter is arranged in the cavity and used for absorbing gas generated in the bonding of the movable structure.
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