CN113091984A - Resonant high-voltage sensor and manufacturing method thereof - Google Patents
Resonant high-voltage sensor and manufacturing method thereof Download PDFInfo
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- CN113091984A CN113091984A CN202110379977.9A CN202110379977A CN113091984A CN 113091984 A CN113091984 A CN 113091984A CN 202110379977 A CN202110379977 A CN 202110379977A CN 113091984 A CN113091984 A CN 113091984A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L7/00—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements
- G01L7/02—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges
- G01L7/08—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type
- G01L7/082—Measuring the steady or quasi-steady pressure of a fluid or a fluent solid material by mechanical or fluid pressure-sensitive elements in the form of elastically-deformable gauges of the flexible-diaphragm type construction or mounting of diaphragms
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
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- Measuring Fluid Pressure (AREA)
Abstract
The present disclosure provides a resonant high-voltage sensor, comprising: the pressure sensor comprises a body, a first pressure sensor and a second pressure sensor, wherein the body is provided with a first resonator, a second resonator, a first pressure sensitive film and a second pressure sensitive film; the first resonator is positioned on the first pressure sensitive film and close to the center of the first pressure sensitive film; the second resonator is located on the second pressure sensitive membrane and near an edge of the second pressure sensitive membrane. The resonant high-voltage sensor also comprises a glass cover plate, wherein a first cavity and a second cavity are formed in the glass cover plate, and the first cavity and the second cavity have the same structure; the position of the first cavity corresponds to the position of the first pressure sensitive membrane, and the position of the second cavity corresponds to the position of the second pressure sensitive membrane. The method adopts an integrated multi-membrane coupling mode, utilizes the multi-membrane coupling to enable the double resonant beams to represent the pressure and the temperature of the sensor, and utilizes the obtained temperature parameters to realize the temperature self-compensation of the resonant high-voltage sensor and improve the pressure measurement precision.
Description
Technical Field
The disclosure relates to the field of MEMS (micro-electromechanical systems) microsensors, in particular to a resonant high-voltage sensor and a manufacturing method thereof.
Background
The output of the resonant pressure sensor is a quasi-digital frequency signal, is suitable for long-distance transmission, has the advantages of high precision, good stability, strong anti-interference capability and the like, and is widely applied to the fields of aerospace, petrochemical industry, marine science, industrial control and the like.
According to the range classification, the resonant pressure sensor can be generally classified into a general range pressure sensor and an ultra-large range (high pressure) pressure sensor. When the general range pressure sensor is sensitive to pressure, the detected pressure is in the linear range of the material, and the design and the manufacture are relatively simple. The design of the high-voltage sensor needs to consider more factors, such as structural strength and packaging strength when the pressure sensing breaks through the elastic range. Meanwhile, in order to simplify the subsequent packaging structure of the sensor and ensure the compatibility of the resonator and the circuit, the design of the resonator needs to consider the excitation and detection modes of the resonator.
At present, resonant pressure sensors for high-pressure measurement can be divided into two types according to different excitation modes, the first type is an electromagnetic excitation mode, but the sensors need permanent magnets to provide magnetic fields, and the permanent magnets are large in mass and volume and are not suitable for miniaturization application. The second is to adopt an electrostatic excitation mode, but the sensor has the problems of complex resonator structure and great process manufacturing difficulty. In addition, in order to provide a vibration space of the resonator and ensure a high quality factor, the resonator needs vacuum packaging, but at present, the two types of high-voltage sensors cannot bear the pressure of a high range on a packaging structure, and cannot ensure high sensitivity and linearity in a high pressure measurement range.
In summary, the present invention provides a resonant pressure sensor structure suitable for high-voltage measurement and a manufacturing method thereof, aiming at the problems of the resonant high-voltage sensor in the overall structure design, excitation and detection, and the vacuum packaging of the resonator.
BRIEF SUMMARY OF THE PRESENT DISCLOSURE
Technical problem to be solved
In view of the above-mentioned shortcomings of the prior art, it is a primary object of the present disclosure to provide a resonant high-voltage sensor and a method for manufacturing the same, which are intended to at least partially solve at least one of the above-mentioned technical problems.
(II) technical scheme
In order to achieve the above object, according to one aspect of the present disclosure, there is provided a resonant type high voltage sensor including:
a body 100;
the body 100 is provided with a first resonator 300, a second resonator 400, a first pressure sensitive film 140 and a second pressure sensitive film 141;
the first resonator 300 is located on the first pressure sensitive film 140 near the center of the first pressure sensitive film 140;
the second resonator 400 is located on the second pressure sensitive film 141 near the edge of the second pressure sensitive film 141.
Preferably, the body 100 includes a device layer 110, a buried oxide layer 120, and a base layer 130;
buried oxide layer 120 is located between device layer 110 and base layer 130.
Preferably, the body 100 further comprises a third pressure sensitive membrane 132;
the third pressure sensitive membrane is a substrate layer 130;
the first pressure sensitive membrane 140 and the second pressure sensitive membrane 141 are both located on the third pressure sensitive membrane 132;
the areas of the first pressure sensitive membrane 140 and the second pressure sensitive membrane 141 are both smaller than the third pressure sensitive membrane 132;
the first pressure sensitive membrane 140 and the second pressure sensitive membrane 141 are the same size.
Preferably, the body 100 is further fabricated with a terminal 160 and an isolation groove 170;
the buried oxide layer 120 and the substrate layer 130 corresponding to the central position of the connection terminal 160 are etched through to form a lead hole 131;
a metal electrode 121 is formed in the lead hole 131;
the isolation groove 170 is located at the periphery of the connection terminal 160.
Preferably, the first resonator 300 includes:
a resonant beam 310 fixed to the first pressure sensitive membrane 140 by an anchor point 122;
driving electrodes 320 located at both sides of the resonance beam 310;
the piezoresistor 350 is positioned at the root part of the resonance beam 310;
the detection electrodes 330 are located at both sides of the ground terminal 340.
Preferably, the first resonator 300 and the second resonator 400 have the same structure.
Preferably, the driving electrode 320 adopts an electrostatic excitation method:
a dc bias voltage and an ac drive voltage are applied to the resonance beam 310 through the drive electrode 320, and the vibration frequency of the resonance beam 310 is detected through the detection electrode 330, the ground terminal 340, and the piezo-resistor 350.
Preferably, the resonant high-voltage sensor further includes a glass cover plate 200;
a first cavity 220 and a second cavity 230 are formed on the glass cover plate 200, and the first cavity 220 and the second cavity 230 have the same structure;
the position of the first cavity 220 corresponds to the position of the first pressure sensitive membrane 140, and the position of the second cavity 230 corresponds to the position of the second pressure sensitive membrane 141;
the getters 210 are deposited on the bottom of the first cavity 220 and the second cavity 230.
Preferably, the first resonator 300 and the second resonator 400 have opposite frequency responses to the pressure P on the third pressure sensitive membrane 132;
when a pressure P acts on the third pressure sensitive film 132, the first pressure sensitive film 140 is located at an opposite middle region of the third pressure sensitive film 132, the first resonator 300 is subjected to a tensile stress, and the resonant frequency of the first resonator 300 is raised to f1；
The second pressure sensitive film 141 is positioned at the opposite edge regions of the third pressure sensitive film 132, the second resonator 400 is subjected to a pressure stress, and the resonance frequency of the second resonator 400 is lowered to f2；
Using f1And f2The difference between the two values is indicative of the magnitude of the pressure P, using f1And f2The sum is indicative of the temperature of the sensor.
On the other hand, the present disclosure also provides a method for manufacturing a resonant high-voltage sensor, the method including:
throwing photoresist on the substrate layer 130 of the body 100 as a mask, and etching to form a lead hole 131;
sputtering a metal layer on the device layer 110 of the body 100, throwing photoresist as a mask, and simultaneously etching a first resonator 300, a second resonator 400, a first pressure sensitive film 140 and a second pressure sensitive film 141 by using primary DRIE/ICP;
releasing the first resonator 300 and the second resonator 400 with gaseous HF;
sputtering a metal mask on the glass cover plate 200, throwing photoresist to pattern the metal mask, and etching with gaseous HF to form a first cavity 220 and a second cavity 230;
generating getters 210 within the first cavity 220 and the second cavity 230;
the glass cover 200 and the body 100 are vacuum bonded by anodic bonding, and the first resonator 300 and the second resonator 400 are sealed in a vacuum chamber;
the metal electrode 121 is formed in the lead hole 131.
(III) advantageous effects
(1) The method adopts an integrated multi-membrane coupling mode, utilizes the multi-membrane coupling to enable the double resonant beams to represent the pressure and the temperature of the sensor, and utilizes the obtained temperature parameters to realize the temperature self-compensation of the resonant high-voltage sensor and improve the pressure measurement precision. The film structure and the double resonators are completed in one-time etching process, so that the process complexity is not increased;
(2) according to the method, the pressure sensitive film does not need to be etched at the bottom of the substrate layer of the SOI wafer, so that a composite mask is not needed for manufacturing the pressure sensitive film and the lead hole of the substrate layer, the processing steps are simplified, and the process difficulty is reduced. The device layer and the substrate layer are both single-layer silicon, and the thickness of the device layer and the substrate layer can be accurately controlled;
(3) the electrostatic excitation/piezoresistive detection mode is adopted, so that the output signal strength of the sensor is improved, and the subsequent packaging design of the sensor is simplified;
(4) according to the method, the lead holes are manufactured by adopting the SOI, so that the complexity of interconnection manufacturing of the leads is reduced, and the reliability of vacuum packaging is improved;
(5) according to the method, an SOI through hole lead mode is adopted, equipotential can be formed in a device layer through sputtering metal, the suction failure of a resonator is avoided, and the rate of finished products is improved;
(6) the method adopts the anodic bonding technology and the getter technology, realizes wafer-level vacuum packaging of the resonator, has high vacuum degree and long maintenance time, and greatly improves the packaging efficiency of the resonant high-voltage sensor chip.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic three-dimensional structure diagram of a resonant high-voltage sensor according to an embodiment of the present disclosure;
fig. 2 is a bottom view of a resonant high-voltage sensor body according to an embodiment of the present disclosure;
fig. 3 is a schematic three-dimensional structural diagram of a resonator of a resonant high-voltage sensor according to an embodiment of the present disclosure;
fig. 4 is a manufacturing method of a resonant high-voltage sensor according to an embodiment of the present disclosure.
Description of the reference numerals
100-bulk 110-device layer 120-buried oxide layer
121-metal electrode 122-anchor 130-base layer
131-lead hole 132 third pressure sensitive film 140-first pressure sensitive film
141-second pressure sensitive membrane 150-first connection structure 151-second connection structure
160-wiring terminal 170-isolation groove 200-glass cover plate
210-getter 220-first cavity 230-second cavity
300-first resonator 310-resonant beam 320-drive electrode
330-detecting electrode 340-ground terminal 350-piezoresistor
400-second resonator
Detailed Description
For purposes of promoting a clear understanding of the objects, features, aspects and advantages of the present disclosure, the present disclosure will be described in further detail below with reference to specific embodiments thereof, which are illustrated in the accompanying drawings. All other embodiments, which can be derived by a person skilled in the art from the embodiments disclosed herein without making any creative effort, shall fall within the scope of protection of the present disclosure.
As shown in fig. 1 to 3, an embodiment of the present disclosure provides a resonant high-voltage sensor, including:
a body 100; the body 100 is provided with a first resonator 300, a second resonator 400, a first pressure sensitive film 140 and a second pressure sensitive film 141; the first resonator 300 is located on the first pressure sensitive film 140 near the center of the first pressure sensitive film 140; the second resonator 400 is located on the second pressure sensitive film 141 near the edge of the second pressure sensitive film 141.
In the present embodiment, the first pressure-sensitive membrane 140 and the second pressure-sensitive membrane 141 include, but are not limited to, a square membrane, a circular membrane, and a polygonal membrane.
In the present embodiment, the body 100 includes a device layer 110, a buried oxide layer 120, and a base layer 130; buried oxide layer 120 is located between device layer 110 and base layer 130.
In this embodiment, the body 100 further includes a third pressure-sensitive membrane 132 for sensing the external pressure; the third pressure sensitive membrane is a substrate layer 130; the first pressure sensitive membrane 140 and the second pressure sensitive membrane 141 are both located on the third pressure sensitive membrane 132; the areas of the first pressure sensitive membrane 140 and the second pressure sensitive membrane 141 are both smaller than the third pressure sensitive membrane 132; the first pressure sensitive membrane 140 and the second pressure sensitive membrane 141 are the same size. In order to improve the compressive strength of the chip, the areas of the first pressure sensitive membrane 140 and the second pressure sensitive membrane 141 are smaller than the area of the third pressure sensitive membrane 132.
In this embodiment, the third pressure-sensitive film 132 can be formed on the substrate layer of the body 100 by etching/etching, and the type of the third pressure-sensitive film 132 formed by etching/etching includes, but is not limited to, a square film, a circular film, and a polygonal film.
In this embodiment, the resonant high-voltage sensor further includes a glass cover plate 200, and the body 100 and the glass cover plate 200 may be vacuum-packaged together by anodic bonding, or may be replaced by eutectic bonding, such as gold-silicon eutectic bonding, gold-tin eutectic bonding, and the like.
The glass cover plate 200 is formed with a first cavity 220 and a second cavity 230 for providing a vibration space of the resonator. The first cavity 220 and the second cavity 230 have the same structural dimensions; the position of the first cavity 220 corresponds to the position of the first pressure sensitive membrane 140, and the position of the second cavity 230 corresponds to the position of the second pressure sensitive membrane 141; in order to absorb the gas released from the glass during the anodic bonding process and increase the degree of vacuum in the first cavity 220 and the second cavity 230, in the present embodiment, the getters 210 are deposited on the bottoms of the first cavity 220 and the second cavity 230.
In this embodiment, the structures of the first cavity 220 and the second cavity 230 include, but are not limited to, a square, a circle, and a polygon, and the manufacturing method may adopt dry etching, sand blasting, laser processing, and the like.
Fig. 2 is a bottom view of a resonant high-voltage sensor body according to an embodiment of the present disclosure, and as shown in fig. 2, a connection terminal 160 and an isolation trench 170 are further formed on the device layer 110, and the connection terminal 160 is located at the periphery of the third pressure-sensitive film 132.
In this embodiment, the body 100 is further fabricated with a connection terminal 160 and an isolation groove 170; the buried oxide layer 120 and the substrate layer 130 corresponding to the central position of the connection terminal 160 are etched through to form a lead hole 131; a metal electrode 121 is formed in the lead hole 131; the isolation groove 170 is located at the periphery of the connection terminal 160.
In the present embodiment, there are 10 connection terminals 160, and the buried oxide layer 120 and the substrate layer 130 corresponding to the center of each connection terminal 160 are etched through to form a lead hole 131, so that the connection terminal 160 communicates with the outside. In order to bond the lead, a metal electrode 121 is formed in the lead hole 131. The isolation groove 170 is located at the periphery of the connection terminal 160 to perform an electrical isolation function.
Fig. 3 is a schematic three-dimensional structural diagram of a resonator of a resonant high-voltage sensor according to an embodiment of the present disclosure, and as shown in fig. 3, a first resonator 300 includes: a resonant beam 310, a drive electrode 320, a sense electrode 330, a ground terminal 340, a piezo-resistor 350, and an anchor point 122.
In the present embodiment, the first resonator 300 includes: a resonant beam 310 fixed to the first pressure sensitive membrane 140 by an anchor point 122; the driving electrodes 320 are positioned on two sides of the resonance beam 310 and used for driving the resonance beam 310 to vibrate, and in order to obtain larger electrostatic force, the driving electrodes 320 and the resonance beam 310 are infinitely close to the driving electrodes 320 and the resonance beam 310; detection electrodes 330, located at both ends of the resonance beam 310, for detecting the frequency output of the resonance beam 310; ground terminals 340 located at both ends of the resonance beam 310; the piezoresistor 350 is positioned at the root of the resonance beam 310, is connected with the detection electrode 330 and is used for leading out piezoresistive signals; the detection electrodes 330 are located at both sides of the ground terminal 340.
In the present embodiment, the first resonator 300 and the second resonator 400 described above have the same structure; the driving electrode 320 adopts an electrostatic excitation mode: a dc bias voltage and an ac drive voltage are applied to the resonance beam 310 through the drive electrode 320, and the vibration frequency of the resonance beam 310 is detected through the detection electrode 330, the ground terminal 340, and the piezo-resistor 350.
In the present embodiment, the resonant high-voltage sensor is of an electrostatic excitation type, and the detection method of the resonant high-voltage sensor is piezoresistive detection. A dc bias voltage and an ac drive voltage are applied to the resonance beam 310 through the drive electrode 320, and the vibration frequency of the resonance beam 310 is detected through the detection electrode 330, the ground terminal 340, and the piezo-resistor 350.
In this embodiment, the first resonator 300 and the second resonator 400 have opposite frequency responses to the pressure P on the third pressure sensitive film 132, when the pressure P acts on the third pressure sensitive film 132, the first pressure sensitive film 140 is located at the opposite middle region of the third pressure sensitive film 132, the first resonator 300 is under tensile stress, and the resonant frequency of the first resonator 300 is raised to f1(ii) a The second pressure sensitive film 141 is positioned at the opposite edge regions of the third pressure sensitive film 132, the second resonator 400 is subjected to a pressure stress, and the resonance frequency of the second resonator 400 is lowered to f2(ii) a Using f1And f2The difference between the two values is indicative of the magnitude of the pressure P, using f1And f2The sum is indicative of the temperature of the resonant high-voltage sensor.
For example, the first resonator 300 is fixed above the first pressure sensitive film 140 near the center, and the second resonator 400 is fixed above the second pressure sensitive film 141 near the edge, so that when an external pressure acts on the third pressure sensitive film 132, the first pressure sensitive film 140 and the second pressure sensitive film 141 generate a tensile stress in the middle region and a compressive stress in the edge region. The first resonator 300 on the first pressure sensitive membrane 140 is subjected to tensile stress and the resonance frequency is raised to f1The second resonator 400 of the third square pressure-sensitive film 141 is subjected to a pressure stress and the resonance frequency is lowered to f2And the two resonators have opposite frequency responses to the external pressure P, so that the difference of the frequencies of the two resonators is used for representing the magnitude of the external pressure P, and the sum of the frequencies of the two resonators is used for representing the temperature, thereby improving the measurement accuracy of the sensor and reducing the nonlinear error. Therefore, the design of double resonators is adopted, and the resonant mode is superThe wide-range pressure sensor can measure the external pressure on one hand, and can perform sensor temperature self-compensation by using the obtained temperature information on the other hand.
Fig. 4 is a manufacturing method of a resonant high-voltage sensor according to an embodiment of the present disclosure, as shown in fig. 4, the method includes:
s401, throwing photoresist on the substrate layer 130 of the body 100 to be used as a mask, and etching to form a lead hole 131;
in this embodiment, the body 100 is an SOI wafer, photoresist is first spun on the base layer 130 of the SOI wafer, a via pattern (aligned to the via pattern of the dielectric layer film) is formed using photoresist, then the via is etched to the buried oxide layer 120 using DRIE/ICP, and then the photoresist is removed.
In the present embodiment, the photoresist used in the fabrication of the lead hole 131 may be replaced with SiO2, Si3N4, ZnO, or the like.
S402, sputtering a metal layer on the device layer 110 of the body 100, throwing photoresist as a mask, and simultaneously etching a first resonator 300, a second resonator 400, a first pressure sensitive film 140 and a second pressure sensitive film 141 by utilizing primary DRIE/ICP;
in this embodiment, Cr is sputtered on the device layer 110 and photoresist is spun on, patterns of the first resonator 300 and the second resonator 400 are formed by photolithography with a photolithography machine, and the exposed Cr metal layer is removed by using the photoresist as a mask material. The first resonator 300 and the second resonator 400 are then formed by DRIE/ICP etching to the buried oxide layer 120 using photoresist and Cr as the mask material.
S403, releasing the first resonator 300 and the second resonator 400 with gaseous HF;
in this embodiment, the photoresist spun on the surface of the SOI wafer in S402 is first removed, and the SOI wafer is cleaned with concentrated H2SO 4. The silicon oxide in the lead hole 131 is then etched with gaseous HF acid. Finally, the exposed silicon oxide of device layer 110 is etched with gaseous HF acid until first resonator 300 and second resonator 400 are released, or wet etching of SiO2 may be used to release first resonator 300 and second resonator 400.
S404, sputtering a metal mask on the glass cover plate 200, throwing photoresist to pattern the metal mask, and etching with gaseous HF to form a first cavity 220 and a second cavity 230;
in this embodiment, a Cr/Au mask is sputtered on the glass plate and photoresist is spun on, the first cavity 220 and the second cavity 230 are patterned by photolithography, and the exposed Cr/Au metal layer is removed. The exposed glass is then etched using HF acid to form a first cavity 220 and a second cavity 230.
In this embodiment, the metal mask material may be replaced by other metals when the glass cover plate is manufactured.
S405, generating getters 210 in the first cavity 220 and the second cavity 230;
in this embodiment, the photoresist and the Cr/Au metal layer on the glass of the first cavity 220 and the second cavity 230 obtained in S404 are removed, and the getter 210 is evaporated in both the first cavity 220 and the second cavity 230 by using a hard mask technique, or the getter 210 can be generated in the first cavity 220 and the second cavity 230 by using a sputtering method.
S406, vacuum bonding the glass cover plate 200 and the body 100 by using anodic bonding, and sealing the first resonator 300 and the second resonator 400 in a vacuum chamber;
in this embodiment, a layer of Cr/Au metal is sputtered onto the released SOI wafer substrate 130. Through the wire hole 131, the Cr/Au metal film can connect the electrodes of the first resonator 300 and the second resonator 400 on the device layer 110 to form an equipotential, so that electrostatic attraction caused by potential deviation of the electrodes in the anode process can be avoided. Then, the glass lid 200 and the SOI wafer are vacuum-bonded by anodic bonding, and the first resonator 300 and the second resonator 400 are sealed in a vacuum chamber.
S407, the metal electrode 121 is formed in the lead hole 131.
In this embodiment, the metal electrode 121 can be formed by sputtering and evaporation.
The above-mentioned embodiments, objects, technical solutions and advantages of the present disclosure are further described in detail, it should be understood that the above-mentioned embodiments are only examples of the present disclosure, and are not intended to limit the present disclosure, and those skilled in the art will understand that various combinations and/or combinations of the various embodiments of the present disclosure and/or the features recited in the claims can be made, and even if such combinations and/or combinations are not explicitly described in the present disclosure, any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (10)
1. A resonant high-voltage sensor, comprising: a body (100);
a first resonator (300), a second resonator (400), a first pressure sensitive film (140) and a second pressure sensitive film (141) are manufactured on the body (100);
the first resonator (300) is located on the first pressure sensitive membrane (140) and near the center of the first pressure sensitive membrane (140);
the second resonator (400) is located on the second pressure sensitive membrane (141) near an edge of the second pressure sensitive membrane (141).
2. Resonant high voltage sensor according to claim 1, characterized in that the body (100) comprises a device layer (110), a buried oxide layer (120) and a substrate layer (130);
the buried oxide layer (120) is located between the device layer (110) and the base layer (130).
3. The resonant high-pressure sensor according to claim 2, characterized in that the body (100) further comprises a third pressure-sensitive membrane (132);
the third pressure sensitive membrane is the base layer (130);
the first pressure sensitive membrane (140) and the second pressure sensitive membrane (141) are both located on the third pressure sensitive membrane (132);
the first pressure sensitive membrane (140) and the second pressure sensitive membrane (141) each have a smaller area than the third pressure sensitive membrane (132);
the first pressure sensitive membrane (140) and the second pressure sensitive membrane (141) are the same size.
4. The resonant high-voltage sensor according to claim 2, wherein the body (100) is further fabricated with a connection terminal (160) and an isolation groove (170);
the buried oxide layer (120) and the substrate layer (130) corresponding to the central position of the wiring terminal (160) are etched through to form a lead hole (131);
a metal electrode (121) is manufactured in the lead hole (131);
the isolation groove (170) is located at the periphery of the connection terminal (160).
5. Resonant high-voltage sensor according to claim 1, characterized in that the first resonator (300) comprises:
a resonant beam (310) secured to the first pressure sensitive membrane (140) by an anchor point (122);
drive electrodes (320) located on both sides of the resonance beam (310);
detection electrodes (330) located at both ends of the resonance beam (310);
a ground terminal (340) located at both ends of the resonance beam (310);
a piezoresistor (350) located at a root of the resonant beam (310);
the detection electrodes (330) are located on both sides of the ground terminal (340).
6. Resonant high-voltage sensor according to claim 1, characterized in that the first resonator (300) and the second resonator (400) have the same structure.
7. The resonant high-voltage sensor according to claim 5, wherein the driving electrode (320) is electrostatically excited;
a DC bias voltage and an AC drive voltage are applied to the resonance beam (310) through the drive electrode (320), and the vibration frequency of the resonance beam (310) is detected through the detection electrode (330), the ground terminal (340) and the piezoresistor (350).
8. Resonant high-voltage sensor according to claim 1, characterized in that it further comprises a glass cover plate (200);
a first cavity (220) and a second cavity (230) are formed in the glass cover plate (200), and the first cavity (220) and the second cavity (230) have the same structure;
the position of the first cavity (220) corresponds to the position of the first pressure sensitive membrane (140), and the position of the second cavity (230) corresponds to the position of the second pressure sensitive membrane (141);
the bottom of the first cavity (220) and the bottom of the second cavity (230) are deposited with getters (210).
9. The resonant high-pressure sensor according to any of claims 1 to 8, wherein the first resonator (300) and the second resonator (400) have opposite frequency responses to a pressure P on the third pressure-sensitive membrane (132);
when a pressure P acts on the third pressure sensitive film (132), the first pressure sensitive film (140) is located at the relative middle area of the third pressure sensitive film (132), the first resonator (300) is under tensile stress, and the resonant frequency of the first resonator (300) is raised to f1；
The second pressure sensitive film (141) is located at an opposite edge region of the third pressure sensitive film (132), the second resonator (400) is subjected to a pressure stress, and a resonance frequency of the second resonator (400) is lowered to f2；
Using said f1And f is2The difference between the values of the pressure P and f is used to characterize the magnitude of the pressure P1And f is2The sum of which characterizes the temperature of the resonant high-voltage sensor.
10. A method for manufacturing a resonant high-voltage sensor is characterized by comprising the following steps:
throwing photoresist on a substrate layer (130) of the body (100) to be used as a mask, and etching to form a lead hole (131);
sputtering a metal layer on a device layer (110) of the body (100), throwing photoresist to be used as a mask, and simultaneously etching a first resonator (300), a second resonator (400), a first pressure sensitive film (140) and a second pressure sensitive film (141) by utilizing one-time DRIE/ICP;
-releasing the first resonator (300) and the second resonator (400) with gaseous HF;
sputtering a metal mask on the glass cover plate (200), throwing photoresist to pattern the metal mask, and etching by using gaseous HF to form a first cavity (220) and a second cavity (230);
generating a getter (210) within the first cavity (220) and the second cavity (230);
vacuum bonding the glass cover plate (200) and the body (100) by anodic bonding, sealing the first resonator (300) and the second resonator (400) within a vacuum chamber;
and manufacturing a metal electrode (121) in the lead hole (131).
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| CN115215287A (en) * | 2022-07-12 | 2022-10-21 | 中国科学院空天信息创新研究院 | Design and manufacturing method of resonant differential pressure sensor based on eutectic bonding process |
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