CN115215287A

CN115215287A - Design and manufacturing method of resonant differential pressure sensor based on eutectic bonding process

Info

Publication number: CN115215287A
Application number: CN202210814306.5A
Authority: CN
Inventors: 王军波; 姚佳辉; 程超; 陈德勇; 谢波; 鲁毓岚; 薛涵; 余宗泽
Original assignee: Aerospace Information Research Institute of CAS
Current assignee: Aerospace Information Research Institute of CAS
Priority date: 2022-07-12
Filing date: 2022-07-12
Publication date: 2022-10-21

Abstract

The invention designs a design and manufacturing method of a resonant differential pressure sensor based on a eutectic bonding process, wherein the manufacturing of a pressure sensitive film and a resonator is completed on an SOI (silicon on insulator) by utilizing photoetching, DRIE (DRIE) and HF (hydrogen fluoride) release processes, and a pure silicon wafer and the SOI are bonded together by utilizing the eutectic bonding process to realize vacuum packaging of the resonator. The resonance type differential pressure sensor designed by the invention can realize the measurement of differential pressure, and the geometric symmetry double-resonator differential output can ensure that the sensor has higher sensitivity and smaller temperature coefficient and static pressure error. Compared with the selective epitaxial growth, the sacrificial layer etching, the polycrystalline silicon process and the silicon-silicon bonding process, the eutectic bonding process greatly reduces the difficulty of the process.

Description

Design and manufacturing method of resonant differential pressure sensor based on eutectic bonding process

Technical Field

The invention relates to the field of silicon resonance pressure sensors, in particular to a design and manufacturing method of a silicon resonance differential pressure sensor, and specifically relates to a design and manufacturing method of a resonance type differential pressure sensor based on a eutectic bonding process.

Background

Micro-Electro-Mechanical systems (MEMS) are a front-edge interdisciplinary developed on the basis of microelectronic technology, combine two characteristics of electrical and Mechanical movable structures of a chip, and utilize two MEMS processing technologies, namely bulk silicon processing and surface processing, to realize interaction with signals of external electricity, heat, light, sound, force and the like on a Micro scale, so that the MEMS technology is widely applied to modern sensor technology. The resonant MEMS differential pressure sensor can realize the measurement of differential pressure by detecting the resonant frequency of the resonator based on the principle that the resonant frequency of the resonator changes along with the differential pressure, is widely applied to the fields of oil exploration, industrial control, aerospace and the like, and has the excellent characteristics of high precision, good long-term stability, digital output, strong anti-interference capability and the like.

The resonant differential pressure sensor mainly adopts an integrated structure of a resonator and a pressure sensitive film, the resonator is placed on the pressure sensitive film, when the pressure sensitive film is subjected to differential pressure, the resonator is stressed to further cause the change of resonant frequency, and the magnitude of the differential pressure reversely deduced from the resonant frequency is detected through a closed-loop control circuit. Since the resonance frequency of the resonator should be influenced only by the differential pressure as a direct variable directly reflecting the magnitude of the measured differential pressure, it is necessary to vacuum-package the resonator in order to avoid the influence of external influencing factors such as temperature, humidity, dust, air pressure on the resonance frequency. In addition, the vacuum packaging can ensure that the resonant differential pressure sensor has a higher Q value, so that the resonant differential pressure sensor has higher detection resolution and faster system response speed.

In the existing vacuum packaging technology of the resonant differential pressure sensor, the Japan Yanghe Motor company adopts selective epitaxial growth and selective etching of a sacrificial layer to realize vacuum sealing of a resonator, the process is complex and lacks flexibility, and the realization difficulty is higher; the university of Wisconsin and Honeywell in the United states adopt the processes of depositing polycrystalline silicon by LPCVD, releasing a sacrificial layer and the like to realize vacuum sealing of the polycrystalline silicon double-end clamped beam, the process needs to consider the problem of adhesion of a substrate to the polycrystalline silicon, and the polycrystalline silicon has inferior performance to monocrystalline silicon in the aspects of material aging, hysteresis, fatigue, creep, yield and the like; the Holland Tewen university adopts the processes of silicon-silicon bonding and the like to realize the vacuum packaging of the resonator, however, the silicon-silicon bonding has quite strict flatness and roughness to wafers and temperature conditions during bonding, and the realization is relatively difficult. Therefore, the invention provides a design and manufacture of a resonant differential pressure sensor based on a eutectic bonding process.

Disclosure of Invention

Technical problem to be solved

The invention mainly aims to provide a design and manufacturing method of a resonant differential pressure sensor based on a eutectic bonding process, which ensures that the resonant differential pressure sensor has good performance on the basis of realizing differential pressure measurement.

(II) technical scheme

The invention provides a design and manufacturing method of a resonant differential pressure sensor based on a eutectic bonding process.

A design and manufacturing method of a resonant differential pressure sensor based on a eutectic bonding process comprises the following steps:

step S1: constructing a three-dimensional model of the resonant differential pressure sensor;

step S2: finite element simulation is carried out on the three-dimensional model of the resonant differential pressure sensor, so that the problems of modal interference and double-resonator sensitivity matching are solved;

and step S3: drawing a photoetching mask plate of the resonant differential pressure sensor; preferably, drawing a photoetching mask plate of the resonant differential pressure sensor in the MEMS pro;

and step S4: manufacturing a resonator, a pressure sensitive film, a lead hole and an electrode structure on a piece of SOI by utilizing photoetching, DRIE and HF release processes;

step S5: carrying out vacuum packaging on the pure silicon wafer and the processed SOI by adopting a eutectic bonding process to obtain a wafer after eutectic bonding;

step S6: etching the area of the pressure sensitive film on the front surface of the eutectic bonded wafer to obtain a sensor chip;

step S7: the sensor chip obtained in step S6 is assembled with glass by anodic bonding.

Specifically, the invention provides a design and manufacturing method of a resonant differential pressure sensor based on a eutectic bonding process, which comprises the following steps: step S1: constructing a three-dimensional model of the resonant differential pressure sensor; step S2: finite element simulation is carried out on the three-dimensional model of the resonant differential pressure sensor, so that the problems of modal interference and double-resonator sensitivity matching are solved; and step S3: drawing a photoetching mask of the resonant differential pressure sensor in the MEMS pro; and step S4: constructing a resonator, a pressure sensitive film, a lead hole and an electrode structure on a piece of SOI by utilizing the processes of photoetching, DRIE, HF release and the like; step S5: carrying out vacuum packaging on the pure silicon wafer and the processed SOI by adopting a eutectic bonding process; step S6: and etching the area of the pressure sensitive film on the front surface of the wafer after eutectic bonding. Step S7: assembling the sensor chip subjected to vacuum packaging with glass BF33 by utilizing anodic bonding; step S8: the sensor chip is assembled.

Preferably, the step S1 includes: substep S1a: performing finite element simulation on different positions of the first resonator and the second resonator on the pressure sensitive film, and adjusting the positions of the double resonators to achieve the purpose of matching the sensitivities; substep S1b: simulating the change of the differential pressure sensitivity of the resonant differential pressure sensor under the conditions of different pressure sensitive film thicknesses, and determining the thickness of the pressure sensitive film; substep S1c: the geometric symmetry design of the resonant differential pressure sensor structure is optimized through simulation of the sensor static pressure sensitivity.

Preferably, the step S2 includes: finite element simulation is carried out on the differential pressure characteristic and the static pressure characteristic of the resonant differential pressure sensor within the working range of the resonant differential pressure sensor (the differential pressure range is-100 kPa, and the static pressure range is 10 kPa-350 kPa), so that mutual verification with subsequent test results is facilitated.

Preferably, the step S4 includes: substep S4a: performing DRIE twice on the SOI substrate layer by adopting a composite mask consisting of ZnO and AZ4620 photoresist to form a lead hole and a pressure sensitive film; substep S4b: performing DRIE twice on the SOI device layer by adopting a composite mask consisting of ZnO and AZ4620 photoresist to form a resonator and an electrode; substep S4c: and releasing the buried oxide layer below the H-shaped resonant beam by utilizing gaseous HF.

Preferably, the step S5 includes: substep S5a: sputtering Cr/Au with a certain thickness on the back of the pure silicon wafer to be used as an intermediate layer of eutectic bonding; substep S5b: and putting the processed SOI and pure silicon wafer into a suss sb6e bonding machine to form a certain bonding system, vacuumizing the cavity, and applying a certain pressure and temperature to bond the two wafers.

Preferably, the step S7 includes: substep S7a: cutting a gas guide hole on the glass BF33 by laser processing; sub-step S7b: and (3) putting the glass BF33 and the manufactured sensor chip into a bonding machine, and applying pressure, temperature and voltage to carry out anodic bonding.

Preferably, the step S8 includes: the glass BF33 assembly layer of the sensor chip is fixed on the Kovar alloy base through silicon rubber, a through hole is processed on the Kovar alloy base and used for being connected with one of the pressure sources, and an electrode on the substrate layer of the sensor chip is connected with a pin on the Kovar alloy base through a gold thread.

Preferably, the method further comprises the following steps: a through hole is processed at the top of the metal pipe cap and used for being connected with another pressure source, and the processed metal pipe cap is welded and sealed with the kovar alloy base, so that the two pressure sources can be isolated from each other.

(III) advantageous effects

The invention realizes the bonding between the SOI and the silicon wafer through the eutectic bonding process, realizes the vacuum packaging of the resonator, ensures that the resonator works in a vacuum environment and reduces the process complexity. In addition, the static pressure error of the resonant differential pressure sensor is very small through reasonable design, and the measurement precision of the resonant differential pressure sensor is improved.

Drawings

FIG. 1 is a resonant differential pressure sensor prototype;

FIG. 2 is a schematic size view of an H-shaped double-ended clamped beam;

FIG. 3 is a schematic diagram of the structure of an SOI device layer;

FIG. 4 is a schematic three-dimensional structure diagram of a resonant differential pressure sensor according to the present invention;

FIG. 5 is a schematic diagram of an assembly of a resonant differential pressure sensor according to the present invention;

FIG. 6 is a process flow diagram of a resonant differential pressure sensor designed by the present invention;

fig. 7 is a schematic diagram of a back structure of the resonant differential pressure sensor according to the present invention.

Wherein:

100-a sensor sensitive unit; 130-a substrate layer; 120-buried oxide layer; 110-a device layer; 140-a first resonator; 150-a second resonator; 132-a first pressure sensitive membrane; 221-a second pressure sensitive membrane; 131-a lead hole; 151. 152, 153, 154, 155, 156, 157, 158-electrodes; 200-packaging a cover plate; 210-a glass layer; 220-silicon layer.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments and the accompanying drawings.

The resonator of the resonant differential pressure sensor designed by the invention is an H-shaped double-end clamped beam, the double resonators are constructed and positioned in different stress areas of a pressure sensitive film, the double resonators are respectively called as a first resonator and a second resonator, the first resonator is placed in the middle of the pressure sensitive film, the second resonator is placed on the edge of the pressure sensitive film, and the stress on the H-shaped resonant beam on the film is opposite no matter the pressure sensitive film deforms upwards or downwards in the middle area and the edge area of the pressure sensitive film. As shown in fig. 5, when the stress (P1) applied to the first sensitive film is greater than the stress (P2) applied to the second sensitive film, the middle region of the pressure sensitive film is a tensile stress region, and the first resonant beam is subjected to a tensile stress to increase the resonant frequency; the pressure sensitive membrane edge area is a pressure stress area, and the second resonant beam is subjected to pressure stress at the moment so that the resonant frequency is reduced. When the stress (P1) borne by the first sensitive film is smaller than the stress (P2) borne by the second sensitive film, the middle area of the pressure sensitive film is a compressive stress area, and the first resonant beam is stressed by compression to reduce the resonant frequency; the pressure sensitive membrane edge area is a tensile stress area, and the second resonant beam is subjected to tensile stress to increase the resonant frequency. The frequency differential output of the double resonators is used for representing the magnitude of differential pressure, on one hand, the sensitivity of the resonant differential pressure sensor is increased, on the other hand, the theoretical design of the double resonators is the same, so that the double resonators are theoretically influenced by temperature and static pressure, but in practice, the double resonators are subjected to deviation in the process manufacturing process, so that the double resonators are not completely identical, but the differential output can still greatly reduce the temperature and static pressure errors.

The design method of the resonant differential pressure sensor based on the eutectic bonding process comprises the following steps:

and step S3: and drawing the photoetching mask plate of the resonant differential pressure sensor. Preferably, the drawing of the resonant differential pressure sensor lithography mask is performed in MEMS pro.

Wherein the step S1 includes: substep S1a: carrying out finite element simulation on the differential pressure sensitivity of the first resonator and the second resonator when the first resonator and the second resonator are positioned at different positions on the pressure sensitive film, and adjusting the positions of the double resonators to achieve the purpose of matching the sensitivities; substep S1b: simulating the change of the differential pressure sensitivity of the resonant differential pressure sensor under the condition of different pressure sensitive film thicknesses, and determining the thickness of the pressure sensitive film; substep S1c: the geometric symmetrical design of the resonant differential pressure sensor structure is optimized through simulation of the static pressure sensitivity of the sensor.

The step S2 comprises the following steps: carrying out finite element simulation on the differential pressure characteristic and the static pressure characteristic of the resonant differential pressure sensor within the working range of the resonant differential pressure sensor by using ANSYS software; the working range of the resonant differential pressure sensor comprises a differential pressure range and a static pressure range, wherein the differential pressure range is-100 kPa to 100kPa, and the static pressure range is 10kPa to 350kPa.

The design prototype of the resonant differential pressure sensor provided by the invention is shown in figure 1, the resonant frequency of a resonator is related to differential pressure, an SOI substrate layer is used as a pressure sensitive film, an SOI device layer is used for constructing the resonator, an SOI buried oxide layer is used as an electric insulating layer and an anchor point, and a pure silicon chip is used as a sealing cover for vacuum packaging. The length of the resonator is set to 1140um, the width is set to 12um, and the middle connecting block is 36um long and 12um wide, as shown in fig. 2. The natural frequency is calculated to be 69.48kHZ by theory. The size of the pressure sensitive film is set to 7000um x 7000um, the size of the electrode on the device layer is 1000um x 1000um, and the diameter of the lead hole of the SOI substrate layer is 600um. The problem of interconnection of leads in vacuum packaging of the sensor is solved by etching a back hole in an SOI substrate layer.

As shown in fig. 1 to 7, the resonant differential pressure sensor has a structure including: the sensor sensitive unit 100 is characterized in that a sensor sensitive unit SOI is composed of a device layer 110, a buried oxide layer 120 and a substrate layer 130. On the backing layer there is a first pressure sensitive membrane 132 and a lead aperture 131. The device layer 110 has a first resonator 140 and a second resonator 150 thereon, and the first resonator 140 and the second resonator 150 are respectively located at the middle and edge regions of the pressure sensitive film. First resonator 140 and second resonator 150 are each coupled to substrate layer 130 via an anchor point located on buried oxide layer 120. The sensor package cover plate 200 is composed of a silicon layer 220 and a glass layer 210, and a second pressure sensitive film 221 is arranged on the silicon layer 220. The sensor sensitive unit and the packaging cover plate are in vacuum packaging through eutectic bonding, and the glass and the silicon wafer are connected through anodic bonding.

For a resonant differential pressure sensor, static pressure will cause the cross section of the diaphragm protected by the cap to deform, which will shift the resonant frequency of the resonant beam, and in order to make the first order effect of ambient pressure the same for each resonator, the effect of static pressure after the differential frequency output is greatly reduced. Therefore, when the device layer structure is designed, the electrodes of the first resonator and the second resonator and the size and shape of the electric connection part are designed into a geometrically symmetrical structure, as shown in figures 3-4. Except for the position of the two resonators on the pressure-sensitive membrane, the anchor points and the

electrodes

151, 152, 153, 154, 155, 156, 157, 158 are geometrically symmetric.

In the design of the resonator, the positions of the first resonator and the second resonator on the pressure sensitive film are continuously adjusted through finite element analysis to achieve the purpose that the sensitivities of the first resonator and the second resonator are matched with each other, the sensitivity matching of the double resonators can enable the resonant differential pressure sensor to have better differential output and static pressure compensation performance, and finally the positions of the double resonators on the pressure sensitive film are respectively determined to be 1100um and-2760 um.

Fig. 6 shows a method for manufacturing a resonant differential pressure sensor according to the present invention.

A, step a: preparing an SOI (silicon on insulator) with a substrate layer of 300um, an oxygen buried layer of 2um and a device layer of 40um, and sputtering a Cr protective device layer on the front surface after cleaning;

step b: and deeply etching the SOI substrate layer by adopting a composite mask consisting of ZnO and AZ4620 photoresist (DRIE). The step needs to carry out two times of etching, when the first etching is carried out, the photoresist is used as an etching mask, the etching pattern is a lead hole, the etching depth is 170 micrometers, and after the first etching is finished, the photoresist mask is removed by using acetone alcohol; during the second etching, znO is used as an etching mask, the etching patterns are a pin hole and a pressure sensitive film, the etching depth is 150 mu m, and NH is used after the second etching is finished ₄ Removing the ZnO mask by using a Cl solution, etching twice to enable the pressure sensitive film to be etched to the position of 150 mu m in the longitudinal direction, and etching the lead hole to the buried oxide layer automatically due to etching;

step c: and deeply etching the SOI device layer by adopting a composite mask consisting of ZnO and AZ4620 photoresist (DRIE) to etch the resonant beam. The step needs to be etched twice, the photoresist is used as an etching mask during the first etching, the etching pattern is an isolation groove, the etching depth is 35 mu m, and the photoresist mask is removed by using acetone alcohol after the first etching is finished; during the second etching, znO is used as an etching mask, the etching patterns comprise an isolation groove, a resonator and an electrode, the etching depth is 10 mu m, after the second etching is finished, the ZnO mask is removed by using NH4Cl solution, after the second etching, the resonator and the electrode are etched to the position of 10 mu m in the longitudinal direction, and the isolation groove is etched to the buried oxide layer due to the fact that etching is stopped automatically;

step d: the gaseous HF releases the resonance beam, wherein a two-step method is adopted to release the resonance beam, the gaseous HF is used to remove an oxygen buried layer at the resonance beam, then isopropanol is used to take away water vapor on the surface, and the release of the resonator is completed by circulating for a plurality of times;

step e: preparing a 300um P-type (100) crystalline phase silicon wafer, and cleaning;

step f: sputtering a metal layer of 30nmCr and 50nmAu on the back of the silicon wafer;

step g: eutectic bonding is carried out on the silicon chip sputtered with metal and the SOI, a natural oxidation layer on the surface of an SOI device layer is removed by using gaseous HF before bonding, a sandwich bonding system is adopted in eutectic bonding, and a silicon chip is added above and below the SOI and the silicon chip, so that the stress uniformity of the whole wafer area is ensured;

step h: adopting a ZnO mask to DRIE 270um on the front surface of the eutectic bonded wafer, and etching an action area of another pressure source;

step i: etching the buried oxide layer in the region where the SOI back lead hole is located by using gaseous HF;

step j: sputtering an electrode in the lead hole using a hard mask;

step k: preparing 1000-um glass BF33, and cutting a round hole with the radius of 800um by adopting a laser processing technology to be used as a pressure guide hole;

step l: and carrying out single-chip anodic bonding on the glass BF33 and the prepared silicon wafer.

After the resonant differential pressure sensor chip finishes the flow sheet, the resonant differential pressure sensor chip needs to be assembled, for the assembly of the resonant differential pressure sensor, an upper pressure source and a lower pressure source of a pressure sensitive membrane need to be isolated from each other, and in addition, the electrical connection between the resonant differential pressure sensor chip and the outside is guaranteed. Therefore, the invention provides an assembly mode as shown in fig. 5, a sensor chip is connected with a kovar alloy base through silicon rubber, a pressure through hole is processed on the kovar alloy base and is connected with a pressure source, an electrode connecting lead on an SOI substrate layer is connected to a pin on the kovar alloy base, the pin realizes the electrical connection between the outside and the sensor chip in a metal pipe cap, the metal cap and the kovar alloy base are welded together to realize sealing, and a through hole is processed on the metal cap and is connected with another pressure source.

So far, the embodiments of the present invention have been described in detail with reference to the accompanying drawings. From the above description, those skilled in the art should clearly understand the design and fabrication of the resonant differential pressure sensor of the present invention.

It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. In addition, the above definitions of the various elements are not limited to the various ways mentioned in the embodiments, and those skilled in the art can make simple changes or substitutions, for example:

(1) Directional phrases referred to in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., refer to the orientation of the drawings only and are not intended to limit the scope of the present invention;

(2) The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e. technical features in different embodiments may be freely combined to form further embodiments.

The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A design and manufacturing method of a resonant differential pressure sensor based on a eutectic bonding process is characterized by comprising the following steps:

step S6: etching the area of the pressure sensitive film on the front surface of the wafer after eutectic bonding to obtain a sensor chip;

2. The design manufacturing method according to claim 1, wherein the step S1 includes:

substep S1a: carrying out finite element simulation on the differential pressure sensitivity of the first resonator and the second resonator when the first resonator and the second resonator are positioned at different positions on the pressure sensitive film, and adjusting the positions of the double resonators to achieve the purpose of matching the sensitivities;

substep S1b: simulating the change of the differential pressure sensitivity of the resonant differential pressure sensor under the conditions of different pressure sensitive film thicknesses, and determining the thickness of the pressure sensitive film;

substep S1c: the geometric symmetry design of the resonant differential pressure sensor structure is optimized through simulation of the sensor static pressure sensitivity.

3. The design manufacturing method of claim 1, wherein the step S2 includes: carrying out finite element simulation on the differential pressure characteristic and the static pressure characteristic of the resonant differential pressure sensor within the working range of the resonant differential pressure sensor by using ANSYS software; the working range of the resonant differential pressure sensor comprises a differential pressure range and a static pressure range, wherein the differential pressure range is-100 kPa to 100kPa, and the static pressure range is 10kPa to 350kPa.

4. The design manufacturing method according to claim 1, wherein the step S4 includes:

substep S4a: performing DRIE twice on the SOI substrate layer by adopting a composite mask consisting of ZnO and photoresist to form a lead hole and a pressure sensitive film;

substep S4b: performing DRIE twice on the SOI device layer by adopting a composite mask consisting of ZnO and photoresist to form a resonator and an electrode;

substep S4c: and releasing the buried oxide layer below the H-shaped resonant beam by utilizing gaseous HF.

5. The design manufacturing method according to claim 1, wherein the step S5 includes:

substep S5a: sputtering Cr and Au on the back of the pure silicon wafer to be used as an intermediate layer of eutectic bonding;

substep S5b: and placing the processed SOI and the pure silicon wafer into a bonding machine to form a bonding system, vacuumizing the cavity, and applying pressure and temperature to bond the pure silicon wafer and the SOI.

6. The design manufacturing method according to claim 1, wherein the step S7 includes:

substep S7a: cutting a gas guide hole on the glass BF33 by laser processing;

substep S7b: and (5) putting the glass BF33 and the sensor chip manufactured in the step S5 into a bonding machine, and applying pressure, temperature and voltage to carry out anodic bonding.

7. The design and fabrication method of claim 1, wherein said fabrication method further comprises step S8: assembling the sensor chip;

preferably, the assembling the sensor chip comprises: fixing a glass assembly layer of the sensor chip on a kovar alloy base through silicon rubber, processing a through hole on the kovar alloy base for connecting one pressure source, and interconnecting an electrode on a substrate layer of the sensor chip with a pin on the kovar alloy base through a gold wire;

preferably, a through hole is formed in the top of the metal cap for connecting another pressure source, and the metal cap is welded and sealed with the kovar base, so that the two pressure sources can be isolated from each other.

8. The design and manufacturing method of claim 1, wherein the resonant differential pressure sensor based on the eutectic bonding process comprises: the sensor comprises a sensor sensitive unit (100), wherein the sensor sensitive unit SOI is composed of a device layer (110), a buried oxide layer (120) and a substrate layer (130); a first pressure sensitive film (132) and a lead hole (131) are arranged on the substrate layer (130); the device layer (110) is provided with a first resonator (140) and a second resonator (150), and the first resonator (140) and the second resonator (150) are respectively positioned in the middle and edge areas of the pressure sensitive film; the first resonator (140) and the second resonator (150) are respectively coupled to the substrate layer (130) through anchor points positioned on the buried oxide layer (120); the packaging cover plate (200) of the sensor is composed of a silicon layer (220) and a glass layer (210), and a second pressure sensitive film (221) is arranged on the silicon layer (220); the sensor sensitive unit (100) and the packaging cover plate (200) are subjected to vacuum packaging through eutectic bonding, and the glass layer (210) and the silicon layer (220) are connected through anodic bonding.