CN110879059B - Tunnel magnetoresistance effect micro-gyroscope device and method based on piezoelectric ceramic out-of-plane driving - Google Patents
Tunnel magnetoresistance effect micro-gyroscope device and method based on piezoelectric ceramic out-of-plane driving Download PDFInfo
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- CN110879059B CN110879059B CN201911391375.4A CN201911391375A CN110879059B CN 110879059 B CN110879059 B CN 110879059B CN 201911391375 A CN201911391375 A CN 201911391375A CN 110879059 B CN110879059 B CN 110879059B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5642—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams
- G01C19/5656—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams the devices involving a micromechanical structure
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5642—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams
- G01C19/5663—Manufacturing; Trimming; Mounting; Housings
Abstract
The invention belongs to the technical field of micro-gyroscopes, and particularly relates to a tunnel magnetoresistance effect micro-gyroscope device and method based on piezoelectric ceramic out-of-plane driving. The invention generates driving resonance through the piezoelectric ceramic driver and has the advantages of simple structure, convenient processing, good amplitude stability, high precision and the like. The invention is used for detecting the angular velocity.
Description
Technical Field
The invention belongs to the technical field of micro-gyroscopes, and particularly relates to a tunnel magnetoresistance effect micro-gyroscope device and method based on piezoelectric ceramic off-plane driving.
Background
The gyroscope is a sensor for measuring angular rate, is one of core devices of the inertial technology, and plays an important role in the fields of modern industrial control, aerospace, national defense and military and consumer electronics. At present, micromechanical gyroscopes are commonly driven by electrostatic, piezoelectric, electromagnetic, etc. and are commonly detected by piezoresistive, piezoelectric, capacitive, resonant tunneling, electron tunneling, etc. In terms of a driving mode, gyro driving mostly depends on a driving beam structure, the driving amplitude is small, precision is not easy to guarantee, and a destabilization effect is easy to occur. For the detection mode, piezoresistive effect detection has low sensitivity and large temperature coefficient, so that the further improvement of the detection precision is limited; the sensitivity of the piezoelectric effect detection is easy to drift and slow in zero resetting, and continuous testing is not suitable; the capacitance detection adopts a comb structure, the displacement resolution is higher, but the precision requirement of the comb manufacturing process is extremely high, and the yield is lower; the sensitivity of the resonant tunneling effect is one order of magnitude higher than that of the silicon piezoresistive effect, but the detection sensitivity obtained by testing is lower, and the problem exists that the bias voltage is easy to drift due to gyro driving, so that the gyro cannot stably work; the manufacturing process of the electronic tunnel effect type device is extremely complex, a detection circuit is relatively difficult to realize, the rate of finished products is low, the normal work is difficult, the integration is not facilitated, especially, the distance between the tunnel junction and the tunnel tip and the electrode plate is difficult to control at a nanometer level, and the normal work of the sensor cannot be guaranteed. The tunnel magnetoresistance effect has the advantages of high sensitivity, miniaturization and easy detection, and can be used for the difficulty of angular velocity signal detection.
Disclosure of Invention
Aiming at the technical problems of low sensitivity, easy drift and low yield of the micro gyroscope, the invention provides the tunnel magnetoresistance effect micro gyroscope device and the method based on the piezoelectric ceramic off-plane drive, which have the advantages of simple structure, high sensitivity, good reliability, long service life and low manufacturing cost.
In order to solve the technical problems, the invention adopts the technical scheme that:
the tunnel magnetoresistance effect micro gyroscope device based on piezoelectric ceramic out-of-plane driving comprises a bottom layer structure, a middle layer structure and an upper layer structure, wherein the bottom layer structure comprises a supporting substrate and a tunnel magnetoresistance element, a square groove is arranged at the center of the supporting substrate, the tunnel magnetoresistance element is fixed at the center of the square groove, the middle layer structure comprises piezoelectric ceramic, the wide bandwidth of piezoelectric ceramic piezoelectric driving is beneficial to changing the driving frequency according to the amplitude-frequency characteristic of the driving direction, the gyroscope modal matching is easy, the driving frequency and the amplitude can be corrected in real time in more external environment, the piezoelectric ceramic adopts a hollow structure and is fixed on the supporting substrate, the piezoelectric ceramic can generate driving resonance with large amplitude and high precision, and the driving frequency amplitude is larger, the precision is higher, the piezoelectric ceramic is fixed and connected with the bottom layer structure, and the piezoelectric ceramic is used for realizing the purposes of increasing the driving frequency amplitude, improving the precision and improving the driving efficiency, The gyro structure is easy to control and process, the upper layer structure comprises a gyro structure outer frame, a folding type orthogonal beam, a mass block and a magnetic film array, the inner side surface of the gyro structure outer frame is connected with the folding type orthogonal beam, the mass block is connected to the center of the gyro structure outer frame through the folding type orthogonal beam, the magnetic film array is bonded on the mass block, a magnetic field generated by the magnetic film array is a sine wave with high transformation rate in the horizontal direction, and almost no magnetic field changes in the vertical direction, so that the sensitivity of Coriolis force detection is improved, and the magnetic film array is arranged right above a tunnel magnetoresistive element.
The folding type orthogonal beam comprises a first detection beam, a second detection beam and a detection beam connecting block, wherein the end part of the first detection beam is fixedly connected with the end part of the second detection beam through the detection beam connecting block.
The magnetic film array is transversely arranged and comprises at least two magnetic films, magnetic signals are recorded in each magnetic film, the polarities of the magnetic signals are connected end to end, and the magnetic fields of the magnetic signals are in sine wave transformation in the horizontal direction.
The tunnel magnetoresistive element comprises two magnetoresistive bridges and a power supply, the two magnetoresistive bridges are connected in parallel, the magnetoresistive bridges comprise negative correlation magnetoresistive junctions R1 and positive correlation magnetoresistive junctions R2, the negative correlation magnetoresistive junctions R1 are connected with the positive correlation magnetoresistive junctions R2 in series, and the power supply is connected to two ends of the magnetoresistive junctions in parallel.
The control method of the tunnel magnetoresistance effect micro gyroscope based on the piezoelectric ceramic off-plane drive comprises the following steps:
s1, defining the normal direction of the mass block as the Z direction, defining the magnetic pole direction of the magnetic film as the X direction, and establishing an XYZ coordinate system according to the right-hand rule;
s2, under the drive of the piezoelectric ceramics, the mass block reciprocates along the Z axis;
s3, when the angular speed of the X axis is input, the folding orthogonal beam deforms, and the mass block is influenced by the Coriolis force to do in-plane reciprocating motion along the Y axis direction under the condition that the Z axis has driving resonance;
s4, the mass block drives the magnetic film array above to move, and the relative position between the magnetic film array and the tunnel magnetoresistive element below changes;
s5, the magnetic resistance element is sensitive to the magnetic field change caused by the tiny displacement, and the magnetic field change causes the tunnel magnetic resistance element to generate the tunnel magnetic resistance effect;
and S6, calculating the output voltage of the tunnel magnetic resistance, and calculating the resistance change of the tunnel magnetic resistance according to the variation of the voltage, so that the input angular speed in the X-axis direction can be calculated.
The calculation formula for calculating the tunnel magnetoresistance output voltage in S6 is:
Vout＝Va-Vb
the V isoutTo output a voltage, Va、VbThe voltages of the two magnetoresistive bridges, respectively.
The method for calculating the displacement distance of the tunnel magnetoresistive element in S6 includes: according to the output voltage VoutCalculating the distance x of the displacement of the magnetoresistive element from a relational expression of the distance x of the displacement of the magnetoresistive element, wherein the output voltage VoutThe relationship with the distance x of displacement of the magnetoresistive element is given by:
the V is0For input voltage, A is modulation depth, d is distance of magnetoresistive bridge circuit, W is period of magnetic signal in magnetic grid, x is distance of displacement of magnetoresistive element, and resistance R of negative correlation magnetoresistive junction1＝R0-KB, the resistance R of the positive correlation magnetoresistive junction2＝R0+ KB, the resistance of the magnetoresistive junction varying only with the intensity of the magnetic field B, R0And K are two fixed values representing the correlation of the magnetoresistive junctions.
The method for calculating the magnitude of the input angular rate in the X-axis direction in S6 includes: according to the working principle of the micro-mechanical gyroscope, a kinetic equation of the micro-mechanical gyroscope is simplified, the detection beam is used as a damped non-mass spring, a vibration behavior of a spring-mass block-damping system under the action of periodic external force is formed, and the description of the kinetic equation is obtained:
m is a detection mass, k and c are respectively an elastic coefficient and a damping force coefficient of a detection mode, z is a driving displacement generated by the piezoelectric ceramic, and the driving amplitude of the piezoelectric ceramic can be obtained as the driving amplitude of the piezoelectric ceramic can be adjusted according to an input voltage value, so that the value of an input angular rate omega can be deduced.
Compared with the prior art, the invention has the following beneficial effects:
the gyroscope off-plane driving device generates driving resonance through the piezoelectric ceramic driver, realizes gyroscope off-plane driving through the piezoelectric ceramic, realizes in-plane detection through the tunnel magnetoresistance effect, is beneficial to changing the driving frequency according to the amplitude-frequency characteristic of the driving direction, is easy for gyroscope modal matching, can correct the driving frequency and amplitude in real time according to the external environment, and has the advantages of simple structure, convenience in processing, good amplitude stability, high precision and the like. The invention greatly improves the detection precision by using the tunnel magnetoresistance effect detection principle and utilizing the magnetic film array to generate the magnetic field with high change rate in the horizontal direction, does not need additional excitation, and has the advantages of simple structure, high sensitivity, good reliability, long service life, low manufacturing cost, low power consumption and the like.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic structural view of a piezoelectric ceramic structure according to the present invention;
FIG. 3 is a top view of an array of magnetic films according to the present invention;
FIG. 4 is a schematic illustration of magnetic signals within a magnetic film array according to the present invention;
FIG. 5 is a diagram of the inner bridge of the tunnel magnetoresistive element of the present invention;
wherein: 1 is the supporting baseplate, 2 is the tunnel magnetic resistance component, 3 is square groove, 4 is piezoceramics, 5 is the top structure frame, 6 is inflection type quadrature roof beam, 7 is the quality piece, 8 is the magnetic film array, 21 is the power, 61 is first detection roof beam, 62 is the second detection roof beam, 63 is the detection roof beam connecting block.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
A tunnel magnetoresistance effect micro gyroscope device based on piezoelectric ceramic out-of-plane driving is shown in figure 1 and comprises a bottom layer structure, a middle layer structure and an upper layer structure, wherein the bottom layer structure comprises a supporting substrate 1 and a tunnel magnetoresistance element 2, a square groove 3 is arranged at the center of the supporting substrate 1, the tunnel magnetoresistance element 2 is fixed at the center of the square groove 3, the middle layer structure comprises piezoelectric ceramic 4, as shown in figure 2, the piezoelectric ceramic 4 is of a hollow structure, the piezoelectric ceramic 4 is good in frequency stability, high in precision, wide in applicable frequency range, small in size, free of moisture absorption and long in service life, is a very excellent frequency control device, wide in piezoelectric driving bandwidth of the piezoelectric ceramic 4 is beneficial to changing driving frequency according to amplitude-frequency characteristics of the driving direction, gyroscope modal matching is easy, driving frequency and amplitude can be corrected in real time under the external environment, and the piezoelectric ceramic 4 is fixed on the supporting substrate 1, the piezoelectric ceramic 4 can generate a large-amplitude high-precision driving resonance, and the driving frequency amplitude is larger, the precision is higher, and the driving frequency amplitude is easier to control and process by fixedly connecting the bottom layer structure and the piezoelectric ceramic 4. The superstructure includes top structure frame 5, inflection type quadrature roof beam 6, quality piece 7, magnetic film array 8, top structure frame 5's medial surface is connected with inflection type quadrature roof beam 6, quality piece 7 is connected at top structure frame 5's center through inflection type quadrature roof beam 6, magnetic film array 8 bonding is on quality piece 7, the magnetic field that magnetic film array 8 produced is the sine wave of high transformation rate in the horizontal direction, and there is no magnetic field change almost in vertical direction, the sensitivity that the coriolis force detected has been improved, magnetic film array 8 sets up directly over tunnel magnetoresistive element 2.
Further, as shown in fig. 3, the folded orthogonal beam 6 includes a first detection beam 61, a second detection beam 62, and a detection beam connection block 63, and an end of the first detection beam 61 is fixedly connected to an end of the second detection beam 62 through the detection beam connection block 63. The total length of the orthogonal beam is reduced by the folding type orthogonal beam 6, and the defect that the beam is broken due to process residual stress is overcome.
Further, as shown in fig. 4, the magnetic film array 8 is arranged in a transverse direction, the magnetic film array 8 includes at least two magnetic films, magnetic signals are recorded in each magnetic film, polarities of the magnetic signals are end-to-end, positive strongest at N, N overlapping position and negative strongest at S, S overlapping position. The magnetic signal enables the magnetic field to be in sine wave transformation in the horizontal direction, and almost no magnetic field change exists in the vertical direction, so that the magnetic field with high change rate is generated in the horizontal direction, and the independent detection of the acceleration in the horizontal direction is realized. And the magnetic film arrays are transversely arranged, so that the magnetic field intensity which changes in a sine wave manner in the horizontal direction is greatly enhanced.
Further, as shown in fig. 5, the tunnel magnetoresistive element 2 includes two magnetoresistive bridges and a power supply 21, the two magnetoresistive bridges are connected in parallel, the magnetoresistive bridges include a negative correlation magnetoresistive junction R1 and a positive correlation magnetoresistive junction R2, the negative correlation magnetoresistive junction R1 is connected in series with the positive correlation magnetoresistive junction R2, and the power supply 21 is connected in parallel at two ends of the magnetoresistive junctions.
The control method of the tunnel magnetoresistance effect micro gyroscope based on the piezoelectric ceramic off-plane drive comprises the following steps:
s1, defining the normal direction of the mass block as the Z direction, defining the magnetic pole direction of the magnetic film as the X direction, and establishing an XYZ coordinate system according to the right-hand rule;
s2, under the drive of the piezoelectric ceramics, the mass block reciprocates along the Z axis;
s3, when the angular speed of the X axis is input, the folding orthogonal beam deforms, and the mass block is influenced by the Coriolis force to do in-plane reciprocating motion along the Y axis direction under the condition that the Z axis has driving resonance;
s4, the mass block drives the magnetic film array above to move, and the relative position between the magnetic film array and the tunnel magnetoresistive element below changes;
s5, the magnetic resistance element is sensitive to the magnetic field change caused by the tiny displacement, and the magnetic field change causes the tunnel magnetic resistance element to generate the tunnel magnetic resistance effect;
and S6, calculating the output voltage of the tunnel magnetic resistance, and calculating the resistance change of the tunnel magnetic resistance according to the variation of the voltage, so that the input angular speed in the X-axis direction can be calculated.
The formula for calculating the tunnel magnetoresistance output voltage in S6 is:
Vout＝Va-Vb
wherein VoutTo output a voltage, Va、VbThe voltages of the two magnetoresistive bridges, respectively.
Further, the method of calculating the displacement distance of the tunnel magnetoresistance element in S6 is: according to the output voltage VoutCalculating the distance x of the displacement of the magnetoresistive element from a relational expression of the distance x of the displacement of the magnetoresistive element, wherein the output voltage VoutThe relationship with the distance x of displacement of the magnetoresistive element is given by:
wherein V0For input voltage, A is modulation depth, d is distance of magnetoresistive bridge circuit, W is period of magnetic signal in magnetic grid, x is distance of displacement of magnetoresistive element, and resistance R of negative correlation magnetoresistive junction1＝R0-KB, resistance R of the positive correlation magnetoresistive junction2＝R0+ KB, the resistance of the magnetoresistive junction varies only with the intensity of the magnetic field B, R0And K are two fixed values representing the correlation of the magnetoresistive junctions.
The method for calculating the magnitude of the input angular rate in the X-axis direction in S6 includes: according to the working principle of the micromechanical gyroscope, a kinetic equation of the micromechanical gyroscope is simplified, the detection beam is used as a damped mass-free spring, a vibration behavior of a spring-mass block-damping system under the action of periodic external force is formed, and the description of the kinetic equation is obtained:
wherein m is the detection mass, k and c are the elastic coefficient and the damping force coefficient of the detection mode respectively, z is the driving displacement generated by the piezoelectric ceramic, and the driving amplitude of the piezoelectric ceramic can be obtained because the driving amplitude of the piezoelectric ceramic can be adjusted according to the input voltage value, so that the value of the input angular rate omega can be deduced.
Although only the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit of the present invention within the knowledge of those skilled in the art, and all changes are encompassed in the scope of the present invention.
Claims (8)
1. Little top device of tunnel magnetoresistance effect based on piezoceramics out-of-plane drive, its characterized in that: the device comprises a bottom layer structure, a middle layer structure and an upper layer structure, wherein the bottom layer structure comprises a supporting substrate (1) and a tunnel magnetoresistive element (2), a square groove (3) is formed in the center of the supporting substrate (1), the tunnel magnetoresistive element (2) is fixed in the center of the square groove (3), the middle layer structure comprises piezoelectric ceramics (4), the piezoelectric ceramics (4) has wide piezoelectric driving bandwidth, the driving frequency can be changed according to the amplitude-frequency characteristic of the driving direction, the gyro mode matching is easy, the driving frequency and the amplitude can be corrected in real time according to the external environment, the piezoelectric ceramics (4) adopt a hollow structure, the piezoelectric ceramics (4) are fixed on the supporting substrate (1), the piezoelectric ceramics (4) can generate driving resonance with high precision, and the bottom layer structure is fixedly connected with the piezoelectric ceramics (4), the driving frequency amplitude is larger, the precision is higher, the control and the processing are easier, the upper layer structure comprises a gyro structure outer frame (5), a folding type orthogonal beam (6), a mass block (7) and a magnetic film array (8), the inner side face of the gyro structure outer frame (5) is connected with the folding type orthogonal beam (6), the mass block (7) is connected to the center of the gyro structure outer frame (5) through the folding type orthogonal beam (6), the magnetic film array (8) is bonded on the mass block (7), a magnetic field generated by the magnetic film array (8) is a sine wave with high transformation rate in the horizontal direction, and almost no magnetic field change exists in the vertical direction, so that the sensitivity of Coriolis force detection is improved, and the magnetic film array (8) is arranged right above the tunnel magnetoresistive element (2).
2. The tunneling magnetoresistance effect micro-gyroscope apparatus based on piezoceramic off-plane drive according to claim 1, characterized in that: the folded orthogonal beam (6) comprises a first detection beam (61), a second detection beam (62) and a detection beam connecting block (63), and the end part of the first detection beam (61) is fixedly connected with the end part of the second detection beam (62) through the detection beam connecting block (63).
3. The tunneling magnetoresistance effect micro-gyroscope apparatus based on piezoceramic off-plane drive according to claim 1, characterized in that: the magnetic film array (8) is transversely arranged, the magnetic film array (8) comprises at least two magnetic films, magnetic signals are recorded in each magnetic film, the polarities of the magnetic signals are connected end to end, and the magnetic fields of the magnetic signals are in sine wave transformation in the horizontal direction.
4. The tunneling magnetoresistance effect micro-gyroscope apparatus based on piezoceramic off-plane drive according to claim 1, characterized in that: the tunnel magnetoresistive element (2) comprises two magnetoresistive bridges and a power supply (21), the two magnetoresistive bridges are connected in parallel, the magnetoresistive bridges comprise a negative correlation magnetoresistive junction R1 and a positive correlation magnetoresistive junction R2, the negative correlation magnetoresistive junction R1 is connected with the positive correlation magnetoresistive junction R2 in series, and the power supply (21) is connected to two ends of the magnetoresistive junctions in parallel.
5. The method for controlling the tunneling magneto-resistance effect micro-gyroscope device based on the piezoelectric ceramic out-of-plane drive according to claim 1, wherein the method comprises the following steps: comprises the following steps:
s1, defining the normal direction of the mass block as the Z direction, defining the magnetic pole direction of the magnetic film as the X direction, and establishing an XYZ coordinate system according to the right-hand rule;
s2, under the drive of the piezoelectric ceramics, the mass block reciprocates along the Z axis;
s3, when the angular speed of the X axis is input, the folding orthogonal beam deforms, and the mass block is influenced by the Coriolis force to do in-plane reciprocating motion along the Y axis direction under the condition that the Z axis has driving resonance;
s4, the mass block drives the magnetic film array above to move, and the relative position between the magnetic film array and the tunnel magnetoresistive element below changes;
s5, the magnetic resistance element is sensitive to the magnetic field change caused by the tiny displacement, and the magnetic field change causes the tunnel magnetic resistance element to generate the tunnel magnetic resistance effect;
and S6, calculating the output voltage of the tunnel magnetic resistance, and calculating the resistance value change of the tunnel magnetic resistance through the voltage variation, so that the input angular speed in the X-axis direction can be calculated.
6. The method for controlling the tunneling magneto-resistance effect micro-gyroscope device based on the piezoelectric ceramic out-of-plane drive according to claim 5, wherein the method comprises the following steps: the formula for calculating the tunnel magnetoresistance output voltage in S6 is:
Vout＝Va-Vb
the V isoutTo output a voltage, said Va、VbThe voltages of the two magnetoresistive bridges, respectively.
7. The method for controlling the tunneling magneto-resistance effect micro-gyroscope device based on the piezoelectric ceramic out-of-plane drive according to claim 5, wherein the method comprises the following steps: the method for calculating the displacement distance of the tunnel magnetoresistive element in S6 includes: according to the output voltage VoutCalculating the distance x of the displacement of the magnetoresistive element from a relational expression of the distance x of the displacement of the magnetoresistive element, wherein the output voltage VoutThe relationship with the distance x of displacement of the magnetoresistive element is given by:
the V is0For input voltage, A is modulation depth, d is distance of magnetoresistive bridge circuit, W is distance between adjacent N, S poles in magnetic grid, i.e. 1/2 of magnetic signal period in magnetic grid, x is distance of displacement of magnetoresistive element, and resistance R of negative correlation magnetoresistive junction1＝R0-KB, the resistance R of the positive correlation magnetoresistive junction2＝R0+ KB, the resistance of the magnetoresistive junction varying only with the intensity of the magnetic field B, R0And K are two fixed values representing the correlation of the magnetoresistive junctions.
8. The method for controlling the tunneling magneto-resistance effect micro-gyroscope device based on the piezoelectric ceramic out-of-plane drive according to claim 5, wherein the method comprises the following steps: the method for calculating the magnitude of the input angular rate in the X-axis direction in S6 includes: according to the working principle of the micro-mechanical gyroscope, a kinetic equation of the micro-mechanical gyroscope is simplified, the detection beam is used as a damped non-mass spring, a vibration behavior of a spring-mass block-damping system under the action of periodic external force is formed, and the description of the kinetic equation is obtained:
m is a detection mass, k and c are respectively an elastic coefficient and a damping force coefficient of a detection mode, z is a driving displacement generated by the piezoelectric ceramic, and the driving amplitude of the piezoelectric ceramic can be obtained as the driving amplitude of the piezoelectric ceramic can be adjusted according to an input voltage value, so that the value of an input angular rate omega can be deduced.
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