CN112344840B - High-sensitivity micro-displacement detection device based on tunnel magnetoresistance effect - Google Patents
High-sensitivity micro-displacement detection device based on tunnel magnetoresistance effect Download PDFInfo
- Publication number
- CN112344840B CN112344840B CN202011173646.1A CN202011173646A CN112344840B CN 112344840 B CN112344840 B CN 112344840B CN 202011173646 A CN202011173646 A CN 202011173646A CN 112344840 B CN112344840 B CN 112344840B
- Authority
- CN
- China
- Prior art keywords
- junction
- magnetoresistive
- tunnel
- substrate part
- bridge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/30—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapers; for testing the alignment of axes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
- G01R33/0041—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration using feed-back or modulation techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
Abstract
The invention belongs to the technical field of displacement detection, and particularly relates to a high-sensitivity micro-displacement detection device based on a tunnel magnetoresistance effect, which comprises a lower-layer substrate part and an upper-layer substrate part, wherein the upper-layer substrate part is arranged above the lower-layer substrate part, the lower-layer substrate part and the upper-layer substrate part are parallel to each other, and the lower-layer substrate part and the upper-layer substrate part are not in contact with each other; the lower-layer substrate part comprises a lower-layer base and a reverse serpentine coil, and the reverse serpentine coil is fixed on the lower-layer base. The micro-displacement detection device provided by the invention adopts the tunnel magneto-resistance effect to detect the displacement change, simultaneously generates two paths of signals with the same amplitude and frequency and 90-degree phase difference through reasonable spatial layout, and introduces a subdivision circuit to process the signals. The method has the advantages of high detection sensitivity, strong anti-interference capability and the like. The invention is used for measuring the micro displacement.
Description
Technical Field
The invention belongs to the technical field of displacement detection, and particularly relates to a high-sensitivity micro-displacement detection device based on a tunnel magnetoresistance effect.
Background
The high-precision micro-displacement measurement technology has become an important development direction of modern industrial measurement technology and a research hotspot in the measurement field. Currently, common micro-displacement detection methods include piezoresistive, capacitive, piezoelectric, nano-grating, tunneling, and the like. The piezoresistive type is realized based on the piezoresistive effect principle of highly doped silicon, a pressure sensitive device formed by the highly doped silicon has stronger dependence on temperature, and a bridge detection circuit formed by the pressure sensitive device can cause sensitivity drift due to temperature change. The improvement of the capacitance accuracy depends on the increase of the capacitance area, but the improvement of the accuracy is difficult due to the reduction of the effective capacitance area because of the miniaturization of the device. The sensitivity of the piezoelectric effect sensor is easy to drift, needs to be corrected frequently, is slow to return to zero, and is not suitable for continuous testing. The nano-grating type detection precision is higher, but the requirement on the environment is strict, the process processing difficulty is high, and the required light source volume is larger and difficult to integrate.
The general structure of Magnetic Tunnel Junctions (MTJs) is a sandwich of ferromagnetic/nonmagnetic insulating/ferromagnetic (FM/I/FM) layers. In saturation magnetization, the magnetization directions of the two ferromagnetic layers are parallel to each other, but the coercive forces of the two ferromagnetic layers are usually different, so that in reverse magnetization, the magnetization vectors of the ferromagnetic layers with small coercive force are firstly inverted, so that the magnetization directions of the two ferromagnetic layers become antiparallel. The tunneling probability of electrons from one magnetic layer to the other is related to the magnetization direction of the two magnetic layers. If the magnetization directions of the two layers are parallel to each other, in one magnetic layer, electrons of a majority spin subband enter the empty state of the majority spin subband in the other magnetic layer, electrons of a minority spin subband also enter the empty state of the minority spin subband in the other magnetic layer, and the total tunneling current is larger; if the magnetization directions of the two magnetic layers are antiparallel, the situation is just opposite, namely in one magnetic layer, the electrons of the majority spin subband will enter the empty state of the minority spin subband in the other magnetic layer, and the electrons of the minority spin subband will also enter the empty state of the majority spin subband in the other magnetic layer, and the tunneling current of the state is relatively small. This physical effect is based on the tunneling effect of electrons in the insulating layer, which is called the tunnel magnetoresistance effect. The micro-displacement detection device based on the tunnel magnetoresistance effect has the advantages of high detection precision, convenience for micro integration and the like.
The micro-displacement is usually measured by detecting the change of an electric signal, the overall working precision of the detection device can be influenced by the processing and analysis of the output electric signal, the external noise interference needs to be filtered by the processing of a circuit to a great extent, the current tunnel magnetic resistance displacement detection mainly processes a single-path signal, and the noise suppression capability of the current tunnel magnetic resistance displacement detection is limited.
Disclosure of Invention
Aiming at the technical problem that the traditional micro-displacement measurement has limited noise inhibition capability, the invention provides the high-sensitivity micro-displacement detection device based on the tunnel magnetoresistance effect, which has the advantages of simple structure, high sensitivity, low manufacturing cost and convenience in debugging.
In order to solve the technical problems, the invention adopts the technical scheme that:
a high-sensitivity micro-displacement detection device based on a tunnel magnetoresistance effect comprises a lower layer substrate part and an upper layer substrate part, wherein the upper layer substrate part is arranged above the lower layer substrate part, the lower layer substrate part and the upper layer substrate part are parallel to each other, and the lower layer substrate part and the upper layer substrate part are not in contact;
the lower substrate part comprises a lower substrate and a reverse serpentine coil, and the reverse serpentine coil is fixed on the lower substrate;
the upper substrate part comprises an upper substrate, a first tunnel magnetoresistive junction bridging structure, a second tunnel magnetoresistive junction bridging structure, a subdivision processing module and a signal transmission line, wherein the first tunnel magnetoresistive junction bridging structure and the second tunnel magnetoresistive junction bridging structure are fixed on the upper substrate, and the first tunnel magnetoresistive junction bridging structure and the second tunnel magnetoresistive junction bridging structure are connected with the subdivision processing module through the signal transmission line.
The zigzag serpentine coil is of a zigzag structure and comprises coil parts and gap parts, and the coil parts and the gap parts are arranged on the lower-layer base in a staggered mode.
The first tunnel magnetoresistive junction bridge structure is disposed directly above the coil portion and the second tunnel magnetoresistive junction bridge structure is disposed directly above the void portion.
The subdivision processing module comprises a rectification module, an anti-tangential conversion module and an analog-to-digital conversion module, the rectification module is respectively connected with the first tunnel reluctance junction bridging structure and the second tunnel reluctance junction bridging structure through signal transmission lines, the rectification module is connected with the anti-tangential conversion module, and the anti-tangential conversion module is connected with the analog-to-digital conversion module.
The first tunnel magnetoresistive junction bridging structure and the second tunnel magnetoresistive junction bridging structure both comprise a first magnetoresistive bridge, a second magnetoresistive bridge and a power supply, the first magnetoresistive bridge and the second magnetoresistive bridge are connected in parallel, the first magnetoresistive bridge comprises a first positive correlation magnetoresistive junction and a first negative correlation magnetoresistive junction, the first positive correlation magnetoresistive junction is connected with a first negative correlation magnetoresistive junction in series, the second magnetoresistive bridge comprises a second positive correlation magnetoresistive junction and a second negative correlation magnetoresistive junction, the second positive correlation magnetoresistive junction is connected with a second negative correlation magnetoresistive junction in series, and the power supply is connected to two ends of the first magnetoresistive bridge and the second magnetoresistive bridge in parallel.
The method for calculating the output voltage in the first tunnel magnetoresistive junction bridging structure and the second tunnel magnetoresistive junction bridging structure comprises the following steps:
R11＝R0-K·B1
R12＝R0+K·B1
R21＝R0-K·B2
R22＝R0+K·B2
deriving an output voltage
The R is11Is the resistance of the first positively correlated magnetoresistive junction, R12Is the resistance of the first negatively correlated magnetoresistive junction, R21Is the resistance of the second positively correlated magnetoresistive junction, R22Is the resistance of the second negatively correlated magnetoresistive junction, K is the coefficient of correlation of the resistance of the magnetoresistive junction with the magnetic field strength, B0For static magnetic field, A is modulation depth, D is spacing of the zigzag coil, D is spacing of the first tunnel magnetoresistive junction bridge structure and the second tunnel magnetoresistive junction bridge structure, and R is0Is an initial resistanceValue of said B1The induced magnetic field intensity of the first positive correlation magnetic resistance junction and the first negative correlation magnetic resistance junction is B2The induced magnetic field intensity of the second positive correlation magnetic resistance junction and the second negative correlation magnetic resistance junction, x is the distance of displacement, and VaIs the output voltage of the first magnetoresistive bridge, said VbIs the voltage output by the second magnetoresistive bridge, said V0Is the supply voltage.
Compared with the prior art, the invention has the following beneficial effects:
1. the micro-displacement detection device provided by the invention adopts the tunnel magneto-resistance effect to detect the displacement change, simultaneously generates two paths of signals with the same amplitude and frequency and 90-degree phase difference through reasonable spatial layout, and introduces a subdivision circuit to process the signals. The method has the advantages of high detection sensitivity, strong anti-interference capability and the like;
2. the micro-displacement detection device provided by the invention adopts a tunnel magnetoresistance effect detection principle and utilizes the inflection serpentine coil to generate a high-change-rate magnetic field, so that the detection precision is greatly improved. Meanwhile, the magnetic field intensity is related to the impressed current and can be automatically adjusted. The sensor has the advantages of simple structure, high sensitivity, low manufacturing cost, convenience in debugging and the like.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic structural view of a portion of an upper substrate according to the present invention;
FIG. 3 is a schematic diagram of a serpentine coil and its magnetic field strength;
FIG. 4 is a schematic diagram of a subdivision processing module according to the present invention;
FIG. 5 is a schematic diagram of a subdivision processing module of the present invention;
FIG. 6 is a circuit schematic of a tunnel magnetoresistive junction bridge structure according to the present invention;
FIG. 7 is a schematic diagram of a signal received by the subdivision processing module according to the present invention.
Wherein: 1 is lower floor's base plate part, 2 is upper floor's base plate part, 101 is the lower floor base, 102 is the zigzag serpentine coil of inflection, 201 is the upper floor base, 202 is first tunnel magnetoresistive junction bridge structures, 203 is second tunnel magnetoresistive junction bridge structures, 204 is subdivision processing module, 205 is signal transmission line, 1021 is the coil part, 1022 is the gap part, 2041 is the rectifier module, 2042 is the arctangent transform module, 2043 is the analog-to-digital conversion module, 2021 is first magnetoresistive bridge, 2022 is the second magnetoresistive bridge, 2023 is the power, TMR11 is first positive correlation magnetoresistive junction, TMR12 is first negative correlation magnetoresistive junction, TMR21 is the second positive correlation magnetoresistive junction, TMR22 is the second negative correlation magnetoresistive junction.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
A high-sensitivity micro-displacement detection device based on a tunnel magnetoresistance effect is shown in figures 1 and 2 and comprises a lower substrate part 1 and an upper substrate part 2, wherein the upper substrate part 2 is arranged above the lower substrate part 1, the lower substrate part 1 and the upper substrate part 2 are parallel to each other, and the lower substrate part 1 and the upper substrate part 2 are not in contact with each other; the lower substrate part 1 comprises a lower substrate 101 and a reverse serpentine coil 102, wherein the reverse serpentine coil 102 is fixed on the lower substrate 101; the upper substrate part 2 comprises an upper substrate 201, a first tunnel magnetoresistive junction bridge structure 202, a second tunnel magnetoresistive junction bridge structure 203, a subdivision processing module 204 and a signal transmission line 205, wherein the first tunnel magnetoresistive junction bridge structure 202 and the second tunnel magnetoresistive junction bridge structure 203 are both fixed on the upper substrate 201, and the first tunnel magnetoresistive junction bridge structure 202 and the second tunnel magnetoresistive junction bridge structure 203 are both connected with the subdivision processing module 204 through the signal transmission line 205. The external world generates a small displacement rightward, that is, the upper substrate portion 2 deviates rightward relative to the lower substrate portion 1, the high-rate magnetic field generated by the zigzag serpentine coil 102 on the lower substrate portion 1 is stable and unchanged during operation, the deviation of the upper substrate portion 2 causes the magnetic fields sensed by the first tunnel magnetoresistive junction bridging structure 202 and the second tunnel magnetoresistive junction bridging structure 203 fixed above to deviate correspondingly, and the direction of the displacement is determined to be rightward by the fact that the second tunnel magnetoresistive junction bridging structure 203 is ahead of the output of the first tunnel magnetoresistive junction bridging structure 202. The reluctance bridge circuit is very sensitive to the change of the magnetic field intensity, so the resistance value of the reluctance bridge circuit is obviously changed, and the resistance value is reflected in the circuit, namely the output signal of the reluctance bridge circuit is obviously changed. The two paths of signals are transmitted to the subdivision processing module 204 through the signal transmission line 205 for processing, the resolution ratio of the electrical signals can be improved through subdivision, the sensitivity to micro-displacement is further improved, and meanwhile, interference signals caused by the external environment can be restrained. And finally, calculating to obtain the magnitude and the direction of the displacement input by the outside to finish measurement.
Further, as shown in fig. 3, the folded serpentine coil 102 adopts a folded structure, and the folded serpentine coil 102 includes a coil portion 1021 and a gap portion 1022, and the coil portion 1021 and the gap portion 1022 are alternately arranged on the lower substrate 101. When current is supplied to the coil part 1021, the coil part 1021 which is wound in a zigzag manner can generate obvious magnetic field change according to the ampere right-hand spiral rule, a sinusoidal signal with the magnetic field intensity similar to that shown in fig. 3 can be obtained when the coil part 1021 is detected at a certain height, and the generated magnetic field has the characteristics of high change rate and adjustability.
Further, preferably, the first tunnel magnetoresistive junction bridging structure 202 is disposed right above the coil portion 1021, the second tunnel magnetoresistive junction bridging structure 203 is disposed right above the gap portion 1022, and the positions of the first tunnel magnetoresistive junction bridging structure 202 and the second tunnel magnetoresistive junction bridging structure 203 are reasonably arranged according to the position of the magnetic field generated by the lower zigzag serpentine coil 102, so that two paths of signals with the same amplitude and frequency and the same phase difference of 90 ° can be generated. Fig. 7 shows two output signals generated by the first tunnel magnetoresistive junction bridge structure 202 and the second tunnel magnetoresistive junction bridge structure 203, which have the same amplitude and frequency and the phase difference of 90 °. The signal is transmitted to the subdivision processing module 204 through the signal transmission line 205 of the upper substrate part 2 for processing, the abscissa represents the time of displacement, the ordinate represents the magnitude of the output signal, and finally the magnitude and the direction of the externally input displacement are obtained through calculation, so that the measurement is completed. The method has the advantages that the relation between the relative advance and the relative lag of the phases of the two signals is used as the judgment basis of the displacement direction, the precision of resolving the displacement amplitude can be greatly improved by highly subdividing the two signals, and meanwhile, the error caused by environmental noise is avoided.
Further, as shown in fig. 4, the subdivision processing module 204 includes a rectifying module 2041, an arctangent conversion module 2042, and an analog-to-digital conversion module 2043, the rectifying module 2041 is connected to the first tunnel magnetoresistive junction bridge structure 202 and the second tunnel magnetoresistive junction bridge structure 203 through the signal transmission line 205, the rectifying module 2041 is connected to the arctangent conversion module 2042, and the arctangent conversion module 2042 is connected to the analog-to-digital conversion module 2043. As shown in fig. 5, the subdivision processing module 204 performs full-wave rectification on two signals generated by the first tunnel magnetoresistive junction bridging structure 202 and the second tunnel magnetoresistive junction bridging structure 203 through the rectification module 2041 to eliminate a direct current component thereof and turn the signal by a negative half cycle, performs arc-tangent transformation on the rectified signal through the arc-tangent transformation module 2042, improves the contrast of the output signal and implements high-multiple subdivision interpolation without introducing an error through the arc-tangent transformation, and finally converts the high-contrast analog signal into an easily measurable digital signal through the analog-to-digital conversion module 2043.
Further, as shown in fig. 6, each of the first and second tunnel magnetoresistive junction bridge structures 202 and 203 includes a first magnetoresistive bridge 2021, a second magnetoresistive bridge 2022, and a power supply 2023, the first magnetoresistive bridge 2021 and the second magnetoresistive bridge 2022 are connected in parallel, the first magnetoresistive bridge 2021 includes a first positive correlated magnetoresistive junction TMR11 and a first negative correlated magnetoresistive junction TMR12, the first positive correlated magnetoresistive junction TMR11 is connected in series with the first negative correlated magnetoresistive junction TMR12, the second magnetoresistive bridge 2022 includes a second positive correlated magnetoresistive junction TMR21 and a second negative correlated magnetoresistive junction TMR22, the second positive correlated magnetoresistive junction TMR21 is connected in series with the second negative correlated magnetoresistive junction TMR22, and the power supply 2023 is connected in parallel at two ends of the first magnetoresistive bridge 2021 and the second magnetoresistive bridge 2022.
Further, the method for calculating the output voltage in the first tunnel magnetoresistive junction bridge structure and the second tunnel magnetoresistive junction bridge structure comprises the following steps:
R11＝R0-K·B1
R12＝R0+K·B1
R21＝R0-K·B2
R22＝R0+K·B2
deriving an output voltage
Wherein: r11Is the resistance of the first positively correlated magnetoresistive junction, R12Is the resistance of the first negatively correlated magnetoresistive junction, R21Is the resistance of the second positively correlated magnetoresistive junction, R22Is the resistance of the second negatively correlated magnetoresistive junction, K is the coefficient of correlation of the resistance of the magnetoresistive junction with the magnetic field strength, B0Is static magnetic field, A is modulation depth, D is space between the zigzag coils, D is space between the first and second tunnel magnetoresistive junction bridge structures, and R is0Is an initial resistance value, B1The induced magnetic field strength of the first positive correlation magnetic resistance junction and the first negative correlation magnetic resistance junction, B2The induced magnetic field intensity of the second positive correlation magnetic resistance junction and the second negative correlation magnetic resistance junction, x is the distance of displacement, VaIs the output voltage, V, of the first magnetoresistive bridgebThe voltage, V, output by the second magnetoresistive bridge0Is the supply voltage.
The working process of the invention is as follows: the external world generates a small displacement rightward, that is, the upper substrate portion 2 deviates rightward relative to the lower substrate portion 1, the high-rate magnetic field generated by the zigzag serpentine coil 102 on the lower substrate portion 1 is stable and unchanged during operation, the deviation of the upper substrate portion 2 causes the magnetic fields sensed by the first tunnel magnetoresistive junction bridging structure 202 and the second tunnel magnetoresistive junction bridging structure 203 fixed above to deviate correspondingly, and the direction of the displacement is determined to be rightward by the fact that the second tunnel magnetoresistive junction bridging structure 203 is ahead of the output of the first tunnel magnetoresistive junction bridging structure 202. The reluctance bridge circuit is very sensitive to the change of the magnetic field intensity, so the resistance value of the reluctance bridge circuit is obviously changed, and the resistance value is reflected in the circuit, namely the output signal of the reluctance bridge circuit is obviously changed. The first tunnel magnetoresistive junction bridge structure 202 and the second tunnel magnetoresistive junction bridge structure 203 are respectively arranged in the middle of a coil part 1021 and a gap part 1022 which correspond to the upper part of the zigzag serpentine coil 102, so that the phases of signals generated by the two magnetoresistive junction bridges are just 90 degrees different, the two paths of signals are transmitted to the subdivision processing module 204 through the signal transmission line 205 to be processed, the subdivision processing module 204 firstly carries out full-wave rectification on the two paths of signals generated by the first tunnel magnetoresistive junction bridge structure 202 and the second tunnel magnetoresistive junction bridge structure 203 through the rectification module 2041, eliminates the direct current component of the signals and turns the negative half cycle of the signals, then carries out arc-tangent conversion on the rectified signals through the arc-tangent conversion module 2042, and can improve the contrast of output signals and realize high-multiple interpolation subdivision without introducing errors through the arc-tangent conversion, and finally, the analog signal with high contrast is converted into a digital signal easy to measure by the analog-to-digital conversion module 2043. The resolution ratio of the electric signal can be improved through subdivision, the sensitivity of the micro-displacement is further improved, and meanwhile, interference signals caused by the external environment can be restrained. And finally, calculating to obtain the magnitude and the direction of the displacement input by the outside to finish measurement.
Although only the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit of the present invention within the knowledge of those skilled in the art, and all changes are encompassed in the scope of the present invention.
Claims (4)
1. A high-sensitivity micro-displacement detection device based on a tunnel magnetoresistance effect is characterized in that: the composite board comprises a lower-layer substrate part (1) and an upper-layer substrate part (2), wherein the upper-layer substrate part (2) is arranged above the lower-layer substrate part (1), the lower-layer substrate part (1) and the upper-layer substrate part (2) are parallel to each other, and no contact exists between the lower-layer substrate part (1) and the upper-layer substrate part (2);
the lower-layer substrate part (1) comprises a lower-layer base (101) and a reverse serpentine coil (102), and the reverse serpentine coil (102) is fixed on the lower-layer base (101);
the upper substrate part (2) comprises an upper substrate (201), a first tunnel magnetoresistive junction bridging structure (202), a second tunnel magnetoresistive junction bridging structure (203), a subdivision processing module (204) and a signal transmission line (205), wherein the first tunnel magnetoresistive junction bridging structure (202) and the second tunnel magnetoresistive junction bridging structure (203) are fixed on the upper substrate (201), and the first tunnel magnetoresistive junction bridging structure (202) and the second tunnel magnetoresistive junction bridging structure (203) are connected with the subdivision processing module (204) through the signal transmission line (205);
the zigzag serpentine coil (102) is of a zigzag structure, the zigzag serpentine coil (102) comprises coil parts (1021) and gap parts (1022), and the coil parts (1021) and the gap parts (1022) are arranged on the lower-layer base (101) in a staggered mode; the first tunnel magnetoresistive junction bridging structure (202) is disposed directly above the coil portion (1021), and the second tunnel magnetoresistive junction bridging structure (203) is disposed directly above the void portion (1022).
2. The high-sensitivity micro-displacement detection device based on the tunnel magnetoresistance effect according to claim 1, wherein: the subdivision processing module (204) comprises a rectifying module (2041), an arc-tangent transformation module (2042) and an analog-to-digital conversion module (2043), wherein the rectifying module (2041) is respectively connected with a first tunnel magnetoresistive junction bridging structure (202) and a second tunnel magnetoresistive junction bridging structure (203) through a signal transmission line (205), the rectifying module (2041) is connected with the arc-tangent transformation module (2042), and the arc-tangent transformation module (2042) is connected with the analog-to-digital conversion module (2043).
3. The high-sensitivity micro-displacement detection device based on the tunnel magnetoresistance effect according to claim 1, wherein: the first tunnel magnetoresistive junction bridge structure (202) and the second tunnel magnetoresistive junction bridge structure (203) comprise a first magnetoresistive bridge (2021), a second magnetoresistive bridge (2022) and a power supply (2023), the first magnetoresistive bridge circuit (2021) and the second magnetoresistive bridge circuit (2022) are connected in parallel, said first magnetoresistive bridge (2021) comprising a first positive correlated magnetoresistive junction (TMR11), a first negative correlated magnetoresistive junction (TMR12), the first positive correlated magneto-resistive junction (TMR11) is connected in series with the first negative correlated magneto-resistive junction (TMR12), said second magnetoresistive bridge (2022) comprising a second positive correlated magnetoresistive junction (TMR21), a second negative correlated magnetoresistive junction (TMR22), the second positive correlated magneto-resistive junction (TMR21) is connected in series with a second negative correlated magneto-resistive junction (TMR22), the power supply (2023) is connected in parallel across the first and second magnetoresistive bridges (2021, 2022).
4. The high-sensitivity micro-displacement detection device based on the tunnel magnetoresistance effect according to claim 3, wherein: the method for calculating the output voltage in the first tunnel magnetoresistive junction bridging structure and the second tunnel magnetoresistive junction bridging structure comprises the following steps:
R11＝R0-K·B1
R12＝R0+K·B1
R21＝R0-K·B2
R22＝R0+K·B2
deriving an output voltage
The R is11Is the resistance of the first positively correlated magnetoresistive junction, R12Is the resistance of the first negatively correlated magnetoresistive junction, R21Is the resistance of the second positively correlated magnetoresistive junction, R22Is the resistance of the second negatively correlated magnetoresistive junction, K is the coefficient of correlation of the resistance of the magnetoresistive junction with the magnetic field strength, B0For static magnetic field, A is modulation depth, D is spacing of the zigzag coil, D is spacing of the first tunnel magnetoresistive junction bridge structure and the second tunnel magnetoresistive junction bridge structure, and R is0Is an initial resistance value, said B1The induced magnetic field intensity of the first positive correlation magnetic resistance junction and the first negative correlation magnetic resistance junction is B2The induced magnetic field intensity of the second positive correlation magnetic resistance junction and the second negative correlation magnetic resistance junction, x is the distance of displacement, and VaIs the output voltage of the first magnetoresistive bridge, said VbIs the voltage output by the second magnetoresistive bridge, said V0Is the supply voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011173646.1A CN112344840B (en) | 2020-10-28 | 2020-10-28 | High-sensitivity micro-displacement detection device based on tunnel magnetoresistance effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011173646.1A CN112344840B (en) | 2020-10-28 | 2020-10-28 | High-sensitivity micro-displacement detection device based on tunnel magnetoresistance effect |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112344840A CN112344840A (en) | 2021-02-09 |
| CN112344840B true CN112344840B (en) | 2022-02-08 |
Family
ID=74358971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011173646.1A Active CN112344840B (en) | 2020-10-28 | 2020-10-28 | High-sensitivity micro-displacement detection device based on tunnel magnetoresistance effect |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112344840B (en) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8900750A (en) * | 1989-03-28 | 1990-10-16 | Philips Nv | DEVICE FOR MEASURING A RELATIVE MOVEMENT. |
| JP2005315732A (en) * | 2004-04-28 | 2005-11-10 | Jfe Steel Kk | Instrument for measuring displacement of ferromagnetic body |
| US9103654B1 (en) * | 2012-04-11 | 2015-08-11 | Louisiana Tech University Research Foundation, A Division Of Louisiana Tech University Foundation, Inc. | GMR nanowire sensors |
| CN103090781A (en) * | 2013-01-11 | 2013-05-08 | 合肥高创传感器有限公司 | Magnetic-sensing sensor applied to lifting jack |
| CN107131819B (en) * | 2017-06-12 | 2023-02-24 | 中北大学 | Single-axis micro-mechanical displacement sensor based on tunnel magnetoresistance effect |
| CN110068318A (en) * | 2019-04-19 | 2019-07-30 | 中北大学 | A kind of tunnel magnetoresistive microthrust test device based on snakelike hot-wire coil |
| CN110780088B (en) * | 2019-11-08 | 2021-08-03 | 中北大学 | Multi-bridge tunnel magnetic resistance double-shaft accelerometer |
| CN110966998A (en) * | 2019-12-13 | 2020-04-07 | 中北大学 | In-plane detection MEMS gyroscope device based on four-bridge tunnel magnetoresistive element |
| CN110879059B (en) * | 2019-12-30 | 2022-05-27 | 中北大学 | Tunnel magnetoresistance effect micro-gyroscope device and method based on piezoelectric ceramic out-of-plane driving |
| CN111077343A (en) * | 2019-12-30 | 2020-04-28 | 中北大学 | Tunnel magnetoresistance MEMS accelerometer structure based on magnetic film and control method |
-
2020
- 2020-10-28 CN CN202011173646.1A patent/CN112344840B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN112344840A (en) | 2021-02-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10353020B2 (en) | Manufacturing method for integrated multilayer magnetoresistive sensor | |
| CN103116143B (en) | Integrated high-accuracy triaxial magnetic sensor | |
| CN102590768B (en) | Magneto-resistance magnetic field gradient sensor | |
| CN103323795B (en) | Integrated three-axis magnetic sensor | |
| CN201622299U (en) | Novel giant magneto resistance GMR integrated current sensor | |
| CN103116144B (en) | Z-direction magnetic field sensor with magnetic orbit structure | |
| CN103885005B (en) | Magnetic sensing device and its magnetic induction method | |
| CN104656045B (en) | Magnetic field sensing module, measuring method and manufacturing method of magnetic field sensing module | |
| EP3631486A2 (en) | Packages for coil actuated position sensors | |
| CN109212439B (en) | Magnetic field sensor | |
| EP2955534B1 (en) | Magnetic sensing apparatus, magnetic induction method and preparation technique therefor | |
| CN103645369B (en) | A kind of current sensor device | |
| US9322889B2 (en) | Low hysteresis high sensitivity magnetic field sensor | |
| CN103901363A (en) | Single-chip Z-axis linear magneto-resistive sensor | |
| CN211651638U (en) | Magneto-resistance angle sensor | |
| CN203480009U (en) | Single-chip Z-axis linear magneto-resistor sensor | |
| CN115267623B (en) | Magneto-resistance magnetic switch sensor | |
| JPWO2018217342A5 (en) | ||
| CN104218147A (en) | Magnetic sensor preparation method and magnetic sensor | |
| US20130127454A1 (en) | Magnetic field sensor including an anisotropic magnetoresistive magnetic sensor and a hall magnetic sensor | |
| CN112344840B (en) | High-sensitivity micro-displacement detection device based on tunnel magnetoresistance effect | |
| CN206132803U (en) | Tunnel magnetoresistive effect accelerometer device based on clearance changes | |
| CN214585084U (en) | Magnetic sensor and nondestructive testing device based on magnetic sensor | |
| CN114609560A (en) | Two-dimensional AMR magnetic sensor and preparation process thereof | |
| CN104422908A (en) | Preparation process of magnetic sensation device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20221205 Address after: No. 3, Xueyuan Road, Taiyuan, Shanxi 030006 Patentee after: NORTH University OF CHINA Patentee after: Nantong Institute for Advanced Study Address before: 226000 building w-9, Zilang science and Technology City, Nantong central Innovation Zone, Suzhou City, Jiangsu Province Patentee before: Nantong Institute of intelligent optics, North China University |