CN206132803U - Tunnel magnetoresistive effect accelerometer device based on clearance changes - Google Patents
Tunnel magnetoresistive effect accelerometer device based on clearance changes Download PDFInfo
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- CN206132803U CN206132803U CN201621166335.1U CN201621166335U CN206132803U CN 206132803 U CN206132803 U CN 206132803U CN 201621166335 U CN201621166335 U CN 201621166335U CN 206132803 U CN206132803 U CN 206132803U
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Abstract
The utility model discloses a tunnel magnetoresistive effect accelerometer device based on clearance changes, including top level structure, underlying structure, first anchor point and second anchor point, the top level structure is through setting up respectively in the first anchor point at underlying structure both ends and the support of second anchor point on underlying structure. The utility model discloses a high sensitivity's tunnel magnetoresistive effect carries out acceleration signal and detects, has that saturated magnetic field is low, work magnetic field is little, sensitivity is high, temperature coefficient is little, measures advantages such as the bandwidth is big, provides that tunnel magnetoresistive effect accelerometer structure plan is simple, compact, the volume is less, sensitivity is high, measurement accuracy is high.
Description
Technical field
This utility model is related to a kind of tunnel magneto-resistance effect accelerometer device based on space change, belongs to micro-electro-mechanical systems
System and Mierotubule-associated proteins technical field.
Background technology
Existing micro accelerometer has that bulky, certainty of measurement is low and sensitivity is low.
Tunnel magneto-resistance effect accelerometer be mainly based upon tunnel magneto-resistance effect (Tunneling magnetre sistance,
TMR) measuring the acceleration of input.Tunnel magneto-resistance effect refers mainly to the magnetic tunnel that two-layer feeromagnetic metal and intermediate insulating layer are constituted
In road knot, if two-layer feeromagnetic metal polarised direction is parallel, then electron tunneling is crossed the probability of insulating barrier and can become big, its macroscopic view
Show as resistance little；If polarised direction antiparallel, then the probability that electron tunneling crosses insulating barrier is less, its macro manifestations is
Resistance Maximum.The polarised direction change caused hence with input acceleration or tunnel gap change, are caused by measuring which
Resistance variations can just measure input acceleration size.
Utility model content
Utility model purpose：This utility model provides a kind of tunnel magneto-resistance effect accelerometer based on space change and fills
Put, extraneous input acceleration causes mass to be subjected to displacement, cause magnetic field to change, then using tunnel magneto-resistance effect surveying
Amount changes of magnetic field, and then obtain the size of input acceleration, the technology solve that existing micro accelerometer is bulky, precision
The low and low problem of sensitivity.
Technical scheme：To solve above-mentioned technical problem, this utility model is adopted the following technical scheme that：
A kind of tunnel magneto-resistance effect accelerometer device based on space change, including top level structure, fabric, first
Anchor point and the second anchor point, top level structure is by being separately positioned on first anchor point and the second anchor points support at fabric two ends the bottom of at
On Rotating fields.
Compared with other kinds of accelerometer, tunnel magneto-resistance effect accelerometer has sensitivity and high resolution, surveys
The advantages of examination wide ranges, this is the hypersensitivity of the magnetic field direction of magnetization or gap change to be determined by tunnel type principle so as to
Become one of developing direction of High Accuracy Microcomputer tool accelerometer of new generation.
In order to further improve the accuracy and sensitivity of the tunnel magneto-resistance effect accelerometer device based on space change, top
Rotating fields by mass, the second insulating barrier, excitation structure layer, the first spring beam, the second spring beam, the first feedback electrode, the 3rd
Feedback electrode, the first gap adjustment electrode and third space adjustment electrode are constituted；
Mass is supported between the first anchor point and the second anchor point by the first spring beam and the second spring beam；Excitation is tied
Structure layer is arranged in the centre position at the mass back side by the second insulating barrier；First feedback electrode and the first gap adjustment electrode cloth
Put at the back side of mass, and positioned at one end end of excitation structure layer, the 3rd feedback electrode and third space adjustment electrode cloth
Put at the back side of mass, and positioned at the other end end of excitation structure layer, the first feedback electrode and the 3rd feedback electrode difference
Electrode is adjusted positioned at the first gap and third space adjusts the periphery of electrode.
Fabric is by the first tunnel magneto-resistive sensor, the second tunnel magneto-resistive sensor, the second feedback electrode, the 4th feedback
Electrode, the second gap adjustment electrode, the 4th gap adjustment electrode, the first insulating barrier and substrate are constituted；
First tunnel magneto-resistive sensor, the second tunnel magneto-resistive sensor, the second feedback electrode, the 4th feedback electrode, second
Gap adjustment electrode, the 4th gap adjustment electrode, the first anchor point and the second anchor point are arranged in the first insulating barrier front；First insulation
Layer bottom surface is connected with substrate；
First tunnel magneto-resistive sensor and the second tunnel magneto-resistive sensor are located at the centre position of the first insulating barrier, and arrange
In the underface of excitation structure layer；
Second feedback electrode and the second gap adjustment electrode are arranged in the first insulation on the outside of the first tunnel magneto-resistive sensor
On layer, and the second feedback electrode is located at immediately below the first feedback electrode, and the second gap adjustment electrode is located at the first gap adjustment electricity
Immediately below pole；4th feedback electrode and the 4th gap adjustment electrode are arranged in the first insulation on the outside of the second tunnel magneto-resistive sensor
On layer, and the 4th feedback electrode is located at immediately below the 3rd feedback electrode, and the 4th gap adjustment electrode is located at third space adjustment electricity
Immediately below pole.
Above-mentioned first tunnel magneto-resistive sensor and the second tunnel magneto-resistive sensor abutting end are inner side, and phase backside is outside.
The direction that mass two ends are pointed to from mass central authorities is defined as the application direction from inside to outside；Criticize in front
Upper surface when often using, the back side criticize lower surface when often using.
When the above-mentioned tunnel magneto-resistance effect accelerometer device based on space change is used, apply electricity on excitation structure layer
Stream, forms local magnetic field, when there is acceleration to be input into, causes mass angular turn, cause excitation structure layer and the first tunnel
Magnetoresistive transducer gap becomes big, diminishes with the second tunnel magneto-resistive sensor gap, so as to cause the first tunnel magneto-resistive sensor and
Second tunnel magneto-resistive sensor ambient magnetic field strength changes, and is passed by the first tunnel magneto-resistive sensor and the second tunnel magnetoresistive
Change of magnetic field strength is measured by sensor, it is possible to obtain input acceleration.
In order to further improve the accuracy and sensitivity of the tunnel magneto-resistance effect accelerometer device based on space change,
Mass is rectangle；First spring beam and the second spring beam are T-shaped；First anchor point and the second anchor point are rectangle；First is anti-
Feeding electrode, the second feedback electrode, the 3rd feedback electrode and the 4th feedback electrode are rectangle；First gap adjustment electrode, second
Gap adjustment electrode, third space adjustment electrode and the 4th gap adjustment electrode are rectangle；Rectangle mass is by " T-shaped " the
One spring beam and " T-shaped " second spring beam are supported on the second anchor point of the first anchor point of rectangle and rectangle.
Further, " T-shaped " first spring beam one end respectively by " L-type " First Transition beam and " L-type " second transition beam and
The first anchor point of rectangle is connected, and " T-shaped " first spring beam other end is connected with rectangle mass；" T-shaped " second spring beam one end point
Not Tong Guo " L-type " the 3rd transition beam and " L-type " the 4th transition beam be connected with the second anchor point of rectangle, " T-shaped " second spring beam is another
End is connected with rectangle mass；" Serpentiss type " structure that excitation structure layer is in series by rectangular block is constituted, and is located at rectangle quality
The centre position of block.
It, by applying electric current formation local magnetic field above, is tunnel magnetoresistive effect that the major function of snakelike excitation structure layer is
Offer condition should be provided.
In order to further improve the accuracy and sensitivity of the tunnel magneto-resistance effect accelerometer device based on space change, the
One tunnel magneto-resistive sensor and the second tunnel magneto-resistive sensor are " ring-like " structure being in series by rectangular block, and are located at the
Two gaps adjust the both sides of center between electrode and the 4th gap adjustment electrode.
First tunnel magneto-resistive sensor and the second tunnel magneto-resistive sensor are formed by stacking by six layer structure, are divided from top to bottom
Wei not sensor top layer, free layer, tunnel barrier layer, sensor ferromagnetic layer, inverse ferric magnetosphere and sensor bottom；Sensor is ferromagnetic
First magnetic direction of layer is preset by structure, and the second magnetic direction of free layer is determined by excitation structure layer；Excitation structure
Layer is formed by stacking by three-decker, from top to bottom respectively excitation structure top layer, excitation structure ferromagnetic layer and excitation structure bottom,
Excitation structure ferromagnetic layer magnetic direction is determined by impressed current；Excitation structure layer magnetic field intensity and direction determine the magnetic of free layer
Field direction and intensity, cause free layer to form tunnel magneto-resistance effect with the ferromagnetic interlayer of excitation structure.
It is in order to simplify structure, easy to use, while ensureing the tunnel magneto-resistance effect accelerometer device based on space change
Accuracy and sensitivity, the second feedback electrode of rectangle, the second gap of rectangle adjustment electrode, the 4th feedback electrode of rectangle and rectangle the
Four gaps adjustment electrode is drawn by first electrode lead, second electrode lead, the 3rd contact conductor and the 4th contact conductor respectively
Go out, the first tunnel magneto-resistive sensor and the second tunnel magneto-resistive sensor respectively by the 5th contact conductor, the 6th contact conductor, the
Seven contact conductors and the 8th contact conductor are drawn, and the first anchor point and the second anchor point pass through the 9th contact conductor and the tenth electrode respectively
Lead is drawn.
The second feedback electrode of above-mentioned rectangle and the 4th feedback electrode of rectangle respectively with the first feedback electrode of rectangle and rectangle
Three feedback electrodes constitute two groups of differential capacitor torquers；The second gap of rectangle adjusts electrode and the 4th gap of rectangle adjustment electrode point
Electrode is not adjusted with the first gap of rectangle and rectangle third space adjustment electrode forms two groups of differential capacitor torquers.
This utility model carries out acceleration signal detection using highly sensitive tunnel magneto-resistance effect, with saturation magnetic field
Low, operating fields are little, sensitivity is high, temperature coefficient is little, and the advantages of Measurement bandwidth is big, the application proposes that tunnel magneto-resistance effect accelerates
Degree meter organization plan is simple, compact, small volume, sensitivity height, certainty of measurement height.
The NM technology of this utility model is prior art.
Beneficial effect：
(1) acceleration signal detection is carried out using highly sensitive tunnel magneto-resistance effect, with saturation magnetic field it is low, work magnetic
Little, sensitivity is high, temperature coefficient is little, the advantages of Measurement bandwidth is big；
(2) being different from general tunnel-effect accelerometer needs costly cost by processing technique and precision mechanism control
Nm gaps between tunnel processed point and mass, the utility model proposes high accuracy tunnel magneto-resistance effect accelerometer direct profit
With current effect, but by accelerometer to be converted to the change of magnetic field intensity, then using the magnetic resistance of tunnel magneto-resistance effect
Sensor need not realize nm gaps detecting the change in magnetic field, and relevant design technology maturation, more conducively processing are realized；
(3) the utility model proposes tunnel magneto-resistance effect arrangements of accelerometers scheme is simple, compact, small volume, sensitive
Degree is high, certainty of measurement is high.
Description of the drawings
Fig. 1 is tunnel magneto-resistance effect accelerometer device horizontal sectional drawing of the present invention based on space change；
Fig. 2 is tunnel magneto-resistance effect accelerometer device vertical cross-sectional view of the present invention based on space change；
Fig. 3 is top level structure upward view of the present invention based on the tunnel magneto-resistance effect accelerometer device of space change；
Fig. 4 is fabric top view of the present invention based on the tunnel magneto-resistance effect accelerometer device of space change；
Fig. 5 is the tunnel magneto-resistive sensor structural representation of the present invention
Fig. 6 is the tunnel magnetoresistive and excitation structure schematic diagram of the present invention；
Fig. 7 is the fabric trace layer schematic diagram of the present invention；
In figure, to for vertical direction, CD is to for horizontal direction for AB.
Specific embodiment
In order to more fully understand this utility model, content of the present utility model is further elucidated with reference to embodiment, but
Content of the present utility model is not limited solely to the following examples.
A kind of tunnel magneto-resistance effect accelerometer device based on space change is by by upper and lower the as depicted in figs. 1 and 2
One anchor point 3 and the second anchor point 4 are supported on the top level structure on fabric and constitute, and wherein top level structure is by mass 15, excitation
Structure sheaf 19, the first spring beam 17, the second spring beam 18, the first feedback electrode 7, the 3rd feedback electrode 9, the first gap adjustment electricity
Pole 11 and third space adjustment electrode 13 are constituted；Fabric is by the first tunnel magneto-resistive sensor 5, the second tunnel magneto-resistive sensor
6th, the second feedback electrode 8, the 4th feedback electrode 10, the second gap adjustment electrode 12, the 4th gap adjustment electrode 14, first insulate
Layer 2 and substrate 1 are constituted.
Top level structure passes through the first spring beam 17 and mass 15 is supported on upper and lower first anchor point, 3 He by the second spring beam 18
Between second anchor point 4；Excitation structure layer 19 is arranged in the centre position at 15 back side of mass by the second insulating barrier 16；First is anti-
Feeding electrode 7 and the first gap adjustment electrode 11 are arranged in the back side of mass 15, and positioned at the left side of excitation structure layer 19, wherein
First feedback electrode 7 is located proximate to 15 border of mass, and the first gap adjustment electrode 11 is located proximate to excitation structure layer 19；3rd
Feedback electrode 9 and third space adjustment electrode 13 are arranged in the right that the back side of mass 15 is located at excitation structure layer 19, wherein
3rd feedback electrode 9 is located proximate to 15 border of mass, and third space adjustment electrode 13 is located proximate to excitation structure layer 19.
Fabric is disposed with the first tunnel magneto-resistive sensor 5, the second tunnel magneto-resistive sensor in 2 front of the first insulating barrier
6th, the second feedback electrode 8, the 4th feedback electrode 10, the second gap adjustment electrode 12, the 4th gap adjustment electrode 14, the first anchor point
3 and second anchor point 4；First insulating barrier, 2 bottom surface is connected with substrate 1；First tunnel magneto-resistive sensor 5 and the second tunnel magnetoresistive sensing
Device 6 is located in the middle of the first insulating barrier 2, and is arranged in the underface of excitation structure layer 19；Second feedback electrode 8 and the second gap are adjusted
Whole electrode 12 is arranged on the first insulating barrier 2 on the outside of the first tunnel magneto-resistive sensor 5, and the second feedback electrode 8 is located at first
Immediately below feedback electrode 7, the second gap adjustment electrode 12 is located at immediately below the first gap adjustment electrode 11；4th feedback electrode 10
Adjust on the first insulating barrier 2 that electrode 14 is arranged on the outside of the second tunnel magneto-resistive sensor 6 with the 4th gap, and the 4th feedback electricity
Pole 10 is located at immediately below the 3rd feedback electrode 9, and the 4th gap adjustment electrode 14 is located at immediately below third space adjustment electrode 13.
Apply electric current on excitation structure layer 19, form local magnetic field, when there is the acceleration along direction 20 to be input into, draw
Play mass 15 to rotate around angle 21, cause excitation structure layer 19 and 5 gap of the first tunnel magneto-resistive sensor to become big, with second
6 gap of tunnel magneto-resistive sensor diminishes, so as to cause around the first tunnel magneto-resistive sensor 5 and the second tunnel magneto-resistive sensor 6
Magnetic field intensity changes, and surveys change of magnetic field strength by the first tunnel magneto-resistive sensor 5 and the second tunnel magneto-resistive sensor 6
Measure and, it is possible to obtain input acceleration.
As shown in figure 3, from top layer upward view, rectangle mass 15 passes through " T-shaped " the first spring beam 17 and the second spring beam
18 are supported on upper and lower rectangle the first anchor point 3 and the second anchor point 4, and 17 one end of " T-shaped " first spring beam passes through " L-type " first mistake
Bridging beam 171 and the second transition beam 172 are connected with following the first anchor point of rectangle 3, and the other end is connected with rectangle mass 15, " T
18 one end of the second spring beam of type " passes through " L-type " the 3rd transition beam 181 and the 4th transition beam 182 and the second anchor point of rectangle 4 above
It is connected, the other end is connected with rectangle mass 15；" Serpentiss type " structure that excitation structure layer 19 is in series by rectangular block is constituted, position
In the centre position of rectangle mass 15；The first feedback electrode of rectangle 7 and the first gap of rectangle adjust the position from left to right of electrode 11
In the left side of " Serpentiss type " excitation structure layer 19；The 3rd feedback electrode 9 of rectangle and rectangle third space adjustment electrode 13 are from right to left
Positioned at the right of " Serpentiss type " excitation structure layer 19.The major function of snakelike excitation structure layer 19 is by applying electric current shape above
Into local magnetic field, formed for tunnel magneto-resistance effect and condition is provided.
As shown in figure 4, from bottom top view, the first tunnel magneto-resistive sensor 5 and the second tunnel magneto-resistive sensor 6 are by rectangle
" ring-like " structure that block is in series is constituted, and the centrage constituted on upper and lower rectangle the first anchor point 3 and the second anchor point 4
The left and right sides；The second feedback electrode of rectangle 8 and the second gap of rectangle adjustment electrode 12 are located at " ring-like " first tunnel from left to right
The left side of magnetoresistive transducer 5；The 4th feedback electrode 10 of rectangle and the 4th gap of rectangle adjustment electrode 14 are located at " ring from right to left
The right of the second tunnel magneto-resistive sensor of type " 6.The second feedback electrode of rectangle 8 and the 4th feedback electrode 10 of rectangle respectively with rectangle
First feedback electrode 7 and the 3rd feedback electrode of rectangle 9 constitute two groups of differential capacitor torquers, by applying different feedback voltages
Feedback force is formed, equilbrium position will be replied as the rectangle mass 15 that acceleration input causes offsets correction.Between rectangle second
Gap adjusts electrode 12 and the 4th gap of rectangle adjustment electrode 14 is adjusted between electrode 11 and rectangle the 3rd with the first gap of rectangle respectively
Gap adjustment electrode 13 forms two groups of differential capacitor torquers, applies different electrostatic bias voltages by two sections in capacitor, can
To produce different electrostatic force, it is mainly used in adjusting snakelike excitation structure layer 19 and the first tunnel magneto-resistive sensor 5 and the second tunnel
Gap between road magnetoresistive transducer 6, forms different degrees of tunnel magneto-resistance effect and sensitivity.
As shown in Figure 5, Figure 6, the first tunnel magneto-resistive sensor 5 is similar with 6 structure of the second tunnel magneto-resistive sensor, the first tunnel
Road magnetoresistive transducer 5 and the second tunnel magneto-resistive sensor 6 are formed by stacking by six layer structure, from top to bottom respectively sensor top
Layer 22, free layer 23, tunnel barrier layer 24, sensor ferromagnetic layer 25, inverse ferric magnetosphere 26 and sensor bottom 27；Sensor is ferromagnetic
First magnetic direction 28 of layer 25 is preset by structure, and the second magnetic direction 29 of free layer 23 is determined by excitation structure layer 19
It is fixed.19 magnetic field intensity of excitation structure layer and direction determine the magnetic direction and intensity of free layer 23, cause free layer 23 and pass
Tunnel magneto-resistance effect is formed between sensor ferromagnetic layer 25.The input of extraneous acceleration causes snakelike excitation structure layer 19 and the first tunnel
Gap between magnetoresistive transducer 5 and the second tunnel magneto-resistive sensor 6 becomes big respectively and diminishes, it will cause the sensing of free layer 23
Magnetic field intensity and the change in direction, directly cause the strong and weak change of tunnel magneto-resistance effect, ultimately result in the first tunnel magnetoresistive sensing
The resistance of device 5 and the second tunnel magneto-resistive sensor 6 becomes big respectively and diminishes, and two differential resistance changes of measurement are obtained with defeated
Enter the size of acceleration；Excitation structure layer 19 is formed by stacking by three-decker, from top to bottom respectively excitation structure top layer 30, encourage
Magnetic structure ferromagnetic layer 31 and excitation structure bottom 32, excitation structure ferromagnetic layer magnetic direction 33 are determined by impressed current.
As shown in fig. 7, the second feedback electrode of rectangle 8, the second gap of rectangle adjustment electrode 12, the 4th feedback electrode 10 of rectangle
Pass through first electrode lead 38, second electrode lead 39, the 3rd contact conductor 40 respectively with the 4th gap of rectangle adjustment electrode 14
Draw with the 4th contact conductor 41.Apply band biasing differential feedback voltage in contact conductor 38 and contact conductor 40, form correction
Torque, mass 15 is corrected can equilbrium position；Apply band bias voltage in contact conductor 39 and contact conductor 41, form power
Square, between adjusting between snakelike excitation structure layer 19 and the first tunnel magneto-resistive sensor 5 and the second tunnel magneto-resistive sensor 6
Gap, forms the tunnel magneto-resistance effect of varying strength.First tunnel magneto-resistive sensor 5 and the second tunnel magneto-resistive sensor 6 lead to respectively
Cross the 5th contact conductor 42, the 6th contact conductor 43, the 7th contact conductor 44 and the 8th contact conductor 45 to draw.Contact conductor 42
First tunnel resistor is constituted and between contact conductor 43；Contact conductor 44 and contact conductor 45 constitute second tunnel resistor, outward
Boundary's circuit is achieved with the size of input acceleration by measuring first tunnel resistor and the second tunnel resistor.First anchor point 3
Pass through the 9th contact conductor 46 respectively with the second anchor point 4 and the tenth contact conductor 47 is drawn, the public electrode as mass.
Claims (6)
1. a kind of tunnel magneto-resistance effect accelerometer device based on space change, it is characterised in that：Including top level structure, bottom
Structure, the first anchor point (3) and the second anchor point (4), top level structure is by being separately positioned on first anchor point (3) at fabric two ends
It is supported on fabric with the second anchor point (4)；
Top level structure is by mass (15), the second insulating barrier (16), excitation structure layer (19), the first spring beam (17), the second bullet
Property beam (18), the first feedback electrode (7), the 3rd feedback electrode (9), the first gap adjustment electrode (11) and third space adjustment it is electric
Pole (13) is constituted；
Mass (15) is supported on by the first anchor point (3) and the second anchor point by the first spring beam (17) and the second spring beam (18)
(4) between；Excitation structure layer (19) is arranged in the centre position at mass (15) back side by the second insulating barrier (16)；First is anti-
Feeding electrode (7) and the first gap adjustment electrode (11) are arranged in the back side of mass (15), and are located at excitation structure layer (19)
One end end, the 3rd feedback electrode (9) and third space adjustment electrode (13) are arranged in the back side of mass (15), and are located at and encourage
The other end end of magnetic structure layer (19), the first feedback electrode (7) and the 3rd feedback electrode (9) are adjusted positioned at the first gap respectively
The periphery of electrode (11) and third space adjustment electrode (13)；
Fabric by the first tunnel magneto-resistive sensor (5), the second tunnel magneto-resistive sensor (6), the second feedback electrode (8),
Four feedback electrodes (10), the second gap adjustment electrode (12), the 4th gap adjustment electrode (14), the first insulating barrier (2) and substrate
(1) constitute；
First tunnel magneto-resistive sensor (5), the second tunnel magneto-resistive sensor (6), the second feedback electrode (8), the 4th feedback electrode
(10), the second gap adjustment electrode (12), the 4th gap adjustment electrode (14), the first anchor point (3) and the second anchor point (4) are arranged in
First insulating barrier (2) front；First insulating barrier (2) bottom surface is connected with substrate (1)；
First tunnel magneto-resistive sensor (5) and the second tunnel magneto-resistive sensor (6) positioned at the centre position of the first insulating barrier (2),
And it is arranged in the underface of excitation structure layer (19)；
Second feedback electrode (8) and the second gap adjustment electrode (12) are arranged on the outside of the first tunnel magneto-resistive sensor (5) the
On one insulating barrier (2), and the second feedback electrode (8) is immediately below the first feedback electrode (7), the second gap adjustment electrode (12)
Immediately below the first gap adjustment electrode (11)；4th feedback electrode (10) and the 4th gap adjustment electrode (14) are arranged in the
On the first insulating barrier (2) on the outside of two tunnel magneto-resistive sensors (6), and the 4th feedback electrode (10) is positioned at the 3rd feedback electrode
(9), immediately below, the 4th gap adjustment electrode (14) is immediately below third space adjustment electrode (13)；Mass (15) is square
Shape；First spring beam (17) and the second spring beam (18) are T-shaped；First anchor point (3) and the second anchor point (4) are rectangle；The
One feedback electrode (7), the second feedback electrode (8), the 3rd feedback electrode (9) and the 4th feedback electrode (10) are rectangle；First
Gap adjustment electrode (11), the second gap adjustment electrode (12), third space adjustment electrode (13) and the 4th gap adjustment electrode
(14) it is rectangle；Rectangle mass (15) is supported on by " T-shaped " first spring beam (17) and " T-shaped " second spring beam (18)
On the first anchor point of rectangle (3) and the second anchor point of rectangle (4).
2. the tunnel magneto-resistance effect accelerometer device based on space change as claimed in claim 1, it is characterised in that：“T
Type " the first spring beam (17) one end passes through " L-type " First Transition beam (171) and " L-type " second transition beam (172) and rectangle respectively
First anchor point (3) is connected, and " T-shaped " first spring beam (17) other end is connected with rectangle mass (15)；" T-shaped " second spring beam
(18) one end passes through " L-type " the 3rd transition beam (181) and " L-type " the 4th transition beam (182) and rectangle the second anchor point (4) phase respectively
Even, " T-shaped " second spring beam (18) other end is connected with rectangle mass (15)；Excitation structure layer (19) is by rectangular block series connection
Into " Serpentiss type " structure constitute, and be located at rectangle mass (15) centre position.
3. the tunnel magneto-resistance effect accelerometer device based on space change as claimed in claim 1, it is characterised in that：First
Tunnel magneto-resistive sensor (5) and the second tunnel magneto-resistive sensor (6) are " ring-like " structure being in series by rectangular block, and position
The both sides of center between electrode (12) and the 4th gap adjustment electrode (14) are adjusted in the second gap.
4. the tunnel magneto-resistance effect accelerometer device based on space change as claimed in claim 3, it is characterised in that：First
Tunnel magneto-resistive sensor (5) and the second tunnel magneto-resistive sensor (6) are formed by stacking by six layer structure, are respectively passed from top to bottom
Sensor top layer (22), free layer (23), tunnel barrier layer (24), sensor ferromagnetic layer (25), inverse ferric magnetosphere (26) and sensor
Bottom (27)；First magnetic direction (28) of sensor ferromagnetic layer (25) is preset by structure, the second magnetic of free layer (23)
Field direction (29) is determined by excitation structure layer (19)；Excitation structure layer (19) is formed by stacking by three-decker, is distinguished from top to bottom
For excitation structure top layer (30), excitation structure ferromagnetic layer (31) and excitation structure bottom (32), excitation structure ferromagnetic layer magnetic field side
Determined to (33) by impressed current；Excitation structure layer (19) magnetic field intensity and direction determine free layer (23) magnetic direction and
Intensity, to cause and form tunnel magneto-resistance effect between free layer (23) and ferromagnetic layer (25).
5. the tunnel magneto-resistance effect accelerometer device based on space change as claimed in claim 1, it is characterised in that：Rectangle
Second feedback electrode (8), the second gap of rectangle adjustment electrode (12), the 4th feedback electrode (10) of rectangle and the 4th gap of rectangle are adjusted
Whole electrode (14) is electric by first electrode lead (38), second electrode lead (39), the 3rd contact conductor (40) and the 4th respectively
Pole lead (41) is drawn, and the first tunnel magneto-resistive sensor (5) and the second tunnel magneto-resistive sensor (6) are drawn by the 5th electrode respectively
Line (42), the 6th contact conductor (43), the 7th contact conductor (44) and the 8th contact conductor (45) are drawn, the first anchor point (3) and
Second anchor point (4) passes through the 9th contact conductor (46) respectively and the tenth contact conductor (47) is drawn.
6. the tunnel magneto-resistance effect accelerometer device based on space change as claimed in claim 1, it is characterised in that：Rectangle
Second feedback electrode (8) and the 4th feedback electrode (10) of rectangle are fed back with the first feedback electrode of rectangle (7) and rectangle the 3rd respectively
Electrode (9) constitutes two groups of differential capacitor torquers；The second gap of rectangle adjustment electrode (12) and the 4th gap of rectangle adjustment electrode
(14) two groups of differential capacitors are formed with the first gap of rectangle adjustment electrode (11) and rectangle third space adjustment electrode (13) respectively
Torquer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621166335.1U CN206132803U (en) | 2016-10-26 | 2016-10-26 | Tunnel magnetoresistive effect accelerometer device based on clearance changes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621166335.1U CN206132803U (en) | 2016-10-26 | 2016-10-26 | Tunnel magnetoresistive effect accelerometer device based on clearance changes |
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| Publication Number | Publication Date |
|---|---|
| CN206132803U true CN206132803U (en) | 2017-04-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621166335.1U Expired - Fee Related CN206132803U (en) | 2016-10-26 | 2016-10-26 | Tunnel magnetoresistive effect accelerometer device based on clearance changes |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10802087B2 (en) | 2018-09-11 | 2020-10-13 | Honeywell International Inc. | Spintronic accelerometer |
| US10871529B2 (en) | 2018-09-11 | 2020-12-22 | Honeywell International Inc. | Spintronic mechanical shock and vibration sensor device |
| US10876839B2 (en) | 2018-09-11 | 2020-12-29 | Honeywell International Inc. | Spintronic gyroscopic sensor device |
-
2016
- 2016-10-26 CN CN201621166335.1U patent/CN206132803U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10802087B2 (en) | 2018-09-11 | 2020-10-13 | Honeywell International Inc. | Spintronic accelerometer |
| US10871529B2 (en) | 2018-09-11 | 2020-12-22 | Honeywell International Inc. | Spintronic mechanical shock and vibration sensor device |
| US10876839B2 (en) | 2018-09-11 | 2020-12-29 | Honeywell International Inc. | Spintronic gyroscopic sensor device |
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