CN202421483U - Single-chip push-pull bridge-type magnetic field sensor - Google Patents
Single-chip push-pull bridge-type magnetic field sensor Download PDFInfo
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- CN202421483U CN202421483U CN 201120409446 CN201120409446U CN202421483U CN 202421483 U CN202421483 U CN 202421483U CN 201120409446 CN201120409446 CN 201120409446 CN 201120409446 U CN201120409446 U CN 201120409446U CN 202421483 U CN202421483 U CN 202421483U
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Abstract
The utility model provides a magnetic field sensor, and specially provides a single-chip push-pull bridge-type magnetic field sensor of a permanent magnet arranged around an MTJ element. The single-chip push-pull bridge-type magnetic field sensor comprises a plurality of magnetic resistance elements connected in a bridge type; each magnetic resistance element comprises a sensing element with a sensitive direction; the sensing element is an MTJ member, an AMR element or a GMR member; and both sides of each magnetic resistance element are provided a pair of permanent magnets for offsetting the magnetization direction of the magnetic resistance element. By arranging the direction of the permanent magnets, the included angle of the magnetization directions of two free layers can be preset, different responses are provided relative to the same sensitive direction. According to the utility model, the push-pull bridge-type magnetic field sensor can be prepared on the single substrate by once film preparation. Simultaneously, an electrified coil is provided for presetting the magnetization directions of the free layers or calibrating the magnetization directions.
Description
Technical field
This utility model relates to the sensor that a kind of detection of magnetic field is used, and especially is a kind of one chip push-pull bridge magnetic field sensor.
Background technology
Magnetic sensor is mainly used in direction, intensity and the position sensing in magnetic field.It is low with the magneto-resistor to be that the push-pull bridge magnetic field sensor of sensitive element has a skew, highly sensitive and advantage that temperature stability is good.MTJ element (MTJ; Magnetic Tunnel Junction) is a kind of magnetoresistive element that begins commercial Application in recent years; That it utilizes is the tunneling magnetoresistance (TMR of magnetoresistance effect material; Tunnel Magnetoresistance), the resistance that mainly shows as magnetoresistive element changes with the variation of the size and Orientation in outfield.It is highly sensitive, low in energy consumption to be with the MTJ element that magnetic field sensor that the magnetic field sensor of sensing element is processed than AMR (anisotropic-magnetoresistance effect) element, Hall effect material and GMR (giant magnetoresistance effect) element of present widespread use has, and the linearity is good; Wide dynamic range; Good temp characteristic, the advantage that antijamming capability is strong, in addition; The MTJ element can also be integrated in the existing chip micro fabrication easily, is convenient to process the very little integrated magnetic field sensor of volume.
The push-pull bridge sensor has than single resistance, with reference to the higher sensitivity of bridge type magnetic sensor, has temperature compensation function simultaneously, can suppress the influence of temperature drift.Traditional M TJ or GMR push-pull type bridge type magnetic sensor require the pinning layer DOM of the spin valve elements in adjacent two arm resistances opposite; And be deposited on same on-chip MTJ or GMR element usually; Needed magnitude of field intensity is identical because its magnetic moment overturns; Therefore all identical usually in the pinning layer DOM of same on-chip magnetic element, this makes that making the push-pull bridge sensor exists very big difficulty.Making to recommend at present stays the method for bridge type magnetic sensor to mainly contain:
(1) twice film-forming process: deposit opposite MTJ of pinning layer DOM or GMR element at twice respectively.This method complex manufacturing technology can obviously influence the film of deposition for the first time when technology is annealed for the second time simultaneously.The consistance of twice film forming was poor before and after this made, caused the resistance of the different brachium pontis of bridge type magnetic sensor inequality, influenced the overall performance of sensor;
(2) multicore sheet encapsulation technology: the magneto-resistor of getting two high conformities from same wafer or different wafer; The sensitive direction of these two magneto-resistors identical (the pinning layer DOM is identical); Then one of them relative another magneto-resistor upset is carried out the encapsulation of multicore sheet for 180 °, constitute the push-pull type half-bridge.This method can realize the function of push-pull type half-bridge, has promptly improved detection sensitivity, has temperature compensation function, but multicore sheet encapsulation on the other hand, package dimension is big, and production cost is high; Can not be strict during actual package carry out 180 ° of upsets; Promptly the sensitive direction of two resistance is not strict to differ 180 °; Make two resistance inequality with the output characteristics that the outfield changes; It is different sensitivity to occur, has bigger asymmetry problems such as bias voltage, in practical application, will bring new problem like this;
(3) the local inversion method of the auxiliary magnetic domain of LASER HEATING: usually on substrate when preparation MTJ or GMR full-bridge, adopting anneals MTJ or GMR wafer in same high-intensity magnetic field makes the pinning layer DOM of different brachium pontis identical.Adopt laser that wafer is carried out the auxiliary magnetic moment upset of spot heating afterwards, make that the pinning layer DOM of the adjacent brachium pontis of bridge type magnetic sensor is opposite, thereby realize the bridge type magnetic sensor of one chip.This method needs specialized equipment, and apparatus expensive has increased process complexity, the prepared bridge type magnetic sensor of while LASER HEATING, and the resistance consistance of its each brachium pontis also can't be guaranteed.
Can find out that from above existing one chip bridge type magnetic sensor all exists overall performance to guarantee, shortcomings such as production cost height.
Summary of the invention
The utility model provides a kind of and can make on a large scale; Can be according to a kind of one chip push-pull bridge magnetic field sensor of application demand design; It comprises the magnetoresistive element that a plurality of bridge-types connect; Each magnetoresistive element comprises the sensitive element with sensitive direction, and sensitive element is MTJ element, AMR element or GMR element, and the both sides of said each magnetoresistive element are provided with and are used for a pair of permanent magnet that the DOM of said magnetoresistive element is setovered.
Preferably, the length of each permanent magnet greater than this to the marginalisation effect of the width between the permanent magnet to reduce to produce between every pair of permanent magnet.
Preferably, each permanent magnet has near the boundary edge of corresponding magnetoresistive element, and the sensitive direction of this boundary edge and described one chip push-pull bridge magnetic field sensor is an angle, and this angle is acute angle or obtuse angle.
Preferably, the permanent magnet that is positioned at the magnetoresistive element both sides produces a permanent magnet bias field, and this permanent magnet bias field has a permanent magnet bias direction.
Preferably, the thickness through permanent magnet is set is to change the intensity of permanent magnet bias field.
Preferably, each permanent magnet has the boundary edge near corresponding magnetoresistive element, and the magnetizing direction through permanent magnet is set and the angle that boundary edge became of said permanent magnet are to change the intensity of permanent magnet bias field.
Preferably, said this has the shape that produces even magnetic bias field to permanent magnet.
Preferably, be arranged mutually parallel between the said magnetoresistive element.
Preferably, be provided with the hot-wire coil that is used for presetting and calibrating output offset around the said magnetoresistive element, insulation mutually between said magnetoresistive element and the hot-wire coil.
Description of drawings
Fig. 1 is the synoptic diagram of a tunnel junction magneto-resistor (MTJ) element.
Fig. 2 is the desirable output curve diagram of MTJ element.
Fig. 3 is a MTJ element connected in series and form the synoptic diagram of an equivalent MTJ magneto-resistor.
Fig. 4 a is the synoptic diagram of the relative DOM of magnetic free layer and pinned magnetic layer.
Fig. 4 b is that DOM is the resistance output map of solid arrow among Fig. 4 a.
Fig. 4 c is that DOM is the resistance output map of dotted arrow among Fig. 4 a.
Fig. 5 is the design diagram that adopts two strip permanent magnet biasing free layer DOM.
Fig. 6 a adopts can the setover structural representation of first embodiment of free layer DOM of permanent magnet and shape anisotropy.
Fig. 6 b adopts can the setover structural representation of second embodiment of free layer DOM of permanent magnet and shape anisotropy.
Fig. 7 is a kind of design idea of recommending the half-bridge magnetic field sensor.
Fig. 8 is a kind of design idea of recommending the full-bridge magnetic field sensor.
Fig. 9 is a kind of schematic layout pattern of recommending the full-bridge magnetic field sensor.
What Figure 10 a was a sensitive direction perpendicular to easy axis direction recommends the bridge construction synoptic diagram.
Figure 10 b is the curve of output of the magneto-resistor that is in the adjacent position of saturation field 50 Oe among Figure 10 a.
Figure 10 c is the curve of output of the magneto-resistor that is in the adjacent position of saturation field 100 Oe among Figure 10 a.
Figure 10 d is the full-bridge curve of output of saturation field 50 Oe among Figure 10 a.
Figure 10 e is the full-bridge curve of output of saturation field 100 Oe among Figure 10 a.
Figure 11 a be sensitive direction be parallel to easy axis direction recommend the bridge construction synoptic diagram.
The curve of output of the magneto-resistor that is in the adjacent position of saturation field 50 Oe among Figure 11 b Figure 11 a.
The curve of output of the magneto-resistor that is in the adjacent position of saturation field 100 Oe among Figure 11 c Figure 10 a.
Figure 11 d is the full-bridge curve of output of saturation field 50 Oe among Figure 11 a.
Figure 11 e is the full-bridge curve of output of saturation field 100 Oe among Figure 11 a.
Embodiment
Below in conjunction with accompanying drawing the preferred embodiment of the utility model is set forth in detail, thereby the protection domain of the utility model is made more explicit defining so that advantage of the utility model and characteristic can be easier to those skilled in the art will recognize that.
Fig. 1 is the synoptic diagram of a tunnel junction magneto-resistor (MTJ) element.The MTJ element 1 of a standard comprises magnetic free layer 6, the tunnel barrier layer 5 between pinned magnetic layer 2 and two magnetospheres.Magnetic free layer 6 is made up of ferromagnetic material, and the DOM 7 of magnetic free layer changes with the change of external magnetic field.Pinned magnetic layer 2 is the fixing magnetospheres of a DOM, and the DOM 8 of pinned magnetic layer is pinned at a direction, can not change at general condition.Pinned magnetic layer is deposited iron magnetosphere 4 formations above or below inverse ferric magnetosphere 3 normally.Mtj structure normally is deposited on the top of the Seed Layer 16 of conduction; The top of mtj structure is a upper electrode layer 17 simultaneously, and the measured resistance value 18 between MTJ element Seed Layer 16 and the upper electrode layer 17 is represented the relative DOM between magnetic free layer 6 and the pinned magnetic layer 2.
Fig. 2 is the desirable output curve diagram of MTJ element, and curve of output is saturated when low resistance state 20 and high-impedance state 21, R
LAnd R
HRepresent the resistance of low resistance state 20 and high-impedance state 21 respectively.When the DOM of the DOM 7 of magnetic free layer and pinned magnetic layer 8 was parallel, the measured resistance value 18 of whole element was at low resistance state 20; When DOM 8 antiparallels of the DOM of magnetic free layer 7 and pinned magnetic layer, the measured resistance value 18 of whole element is at high-impedance state 21.Through known technology, the resistance of MTJ element 1 can change saturation field-H along with externally-applied magnetic field is linear between high-impedance state and low resistance state
sAnd H
sBetween magnetic field range be exactly the measurement range of MTJ element.
Fig. 3 is a MTJ element connected in series and form the synoptic diagram of an equivalent MTJ magneto-resistor.The MTJ series of elements that is together in series can reduce noise, improves the stability of sensor.In the MTJ magneto-resistor, the bias voltage of each MTJ element 1 reduces with the increase of magnetic tunnel-junction quantity.The reduction of electric current need produce a big voltage output, thereby has reduced shot noise, along with the ESD that increasing of magnetic tunnel-junction also strengthened sensor simultaneously is stable.In addition, along with the noise that increases the MTJ magneto-resistor of MTJ element 1 quantity correspondingly reduces, this be because each independently the mutual incoherent random behavior of MTJ element on average fallen.
Fig. 4 a is the synoptic diagram of the relative DOM of magnetic free layer and pinned magnetic layer.The DOM 7 of magnetic free layer is an angle with the DOM 8 of pinned magnetic layer, as can be seen from the figure, under the outer field action of same sensitive direction 9, the MTJ element of different angles α can have different response party to.Through the direction of different permanent magnet bias-field 10 is set; Make the DOM 8 of pinned magnetic layer of one group of MTJ element identical with angle; DOM 7 differences of magnetic free layer; When magnetoresistive element is applied an outfield; The outfield make along the component of sensitive direction 9 this group magnetoresistive element the magnetic free layer DOM 7 switched in opposite direction---the DOM 7 (shown in Fig. 4 b solid arrow) of a magnetic free layer is more prone to the DOM 8 of pinned magnetic layer, this moment, the resistance of element reduced; The DOM 7 (shown in Fig. 4 c dotted arrow) of another magnetic free layer is away from the DOM 8 of pinned magnetic layer simultaneously, and this moment, the resistance of element raise.Therefore, this design can make magnetoresistive element produce opposite response party to.
Fig. 5 is the design diagram that adopts two strip permanent magnet biasing free layer DOM; Wherein every permanent magnet has suitable length 12 to avoid the edge effect on magnet border with respect to magnet gap 13, and the direction of magnetic bias field 10 is perpendicular to the surface of permanent magnet after magnetizing along same direction.
Fig. 6 a and Fig. 6 b adopt can the setover design diagram of free layer DOM of permanent magnet and shape anisotropy, in fact the DOM 7 of magnetic free layer depend on shape anisotropy can and the combination that acts on of magnetic bias field 10.The shape of magnetoresistive element can be rectangle, rhombus or ellipse usually; Shape anisotropy can make the free layer DOM trend towards the long axis direction of magnetoresistive element; Through the shape of element is set; Be the intensity that the ratio of major axis and minor axis can the preset shape anisotropy energy, the DOM 7 of the magnetic free layer of magnetoresistive element be shape anisotropy can and the competition result of magnetic bias field 10.The intensity of magnetic bias field 10 depends on the density of magnet surface magnetic charge, magnetizing direction 11 and perpendicular to the direction at interface 14 the closer to, the density that surperficial magnetic charge is piled up is just big more.The density and the sin θ of surface magnetic charge are directly proportional, and wherein angle θ is the angle of permanent magnet interface 14 and magnetizing direction 11.Can be able to preset the angle of magnetoresistive element through adjusting magnetic bias field 10 and shape anisotropy, in this design, the DOM 8 of sensitive direction 9 and pinned magnetic layer is vertical.
Fig. 7 is a kind of design idea of recommending the half-bridge magnetic field sensor.As shown in the figure; Magneto-resistor R11 and R12 constitute a half-bridge; The angle size of two magneto-resistors is identical; The DOM 8 of pinned magnetic layer is identical, and the DOM 7 of magnetic free layer is pointed to different, and the DOM 7 of magnetic free layer depends on the combination of shape anisotropy ability and magnetic bias field 10 effects.When applying one during along the outfield of sensitive direction 9 forwards to recommending the half-bridge sensor, the DOM 7 of the magnetic free layer of magneto-resistor R11 levels off to the DOM 8 of pinned magnetic layer, and its resistance correspondingly reduces; The DOM 7 of the magnetic free layer of R12 is away from the DOM 8 of pinned magnetic layer simultaneously, and its resistance correspondingly increases, at constant voltage V
BIASEffect under, output end voltage V
OUTThe corresponding variation taken place, and promptly constitutes and recommends half-bridge.
The biasing means of recommending the half-bridge magnetic field sensor is: as shown in Figure 7; Recommend half-bridge along 11 pairs of magnetizing directions and apply a high-intensity magnetic field; After removing external magnetic field; The magnetic field 10 at 13 places, gap between the permanent magnet 15 is produced by the virtual magnetic charge at 14 places, border, and perpendicular to border 14, its concrete biased direction is shown in the arrow 10 of Fig. 7.
Fig. 8 is a kind of design idea of recommending the full-bridge magnetic field sensor.As shown in the figure, magneto-resistor R21, R22, R23, R24 full-bridge connect, and the angle size of each magneto-resistor is identical; The DOM 8 of pinned magnetic layer is identical, and the DOM 7 of the magnetic free layer of the magneto-resistor of relative position (R21 and R23, R22 and R24) is identical; The magneto-resistor of adjacent position (R21 and R22; R22 and R23, R23 and R24, R24 and R21) DOM 7 of magnetic free layer is different.When applying one during along the outfield of sensitive direction 9 forwards to recommending the half-bridge sensor, the DOM 7 of the magnetic free layer of magneto-resistor R21, R23 levels off to the DOM 8 of pinned magnetic layer, and its resistance correspondingly reduces; The DOM 7 of the magnetic free layer of R22, R24 is away from the DOM 8 of pinned magnetic layer simultaneously, and its resistance correspondingly increases, at constant voltage V
BIASEffect under, the corresponding variation takes place in voltage between output terminal V1 and V2, promptly constitutes and recommends full-bridge.In the ideal case, if the resistance of resistance R 21 and R23 becomes (R1+ Δ R) by R1, the resistance of then corresponding R22 and R24 becomes (R2-Δ R) by R2, then is output as:
Under the ideal situation, R1=R2＞Δ R then can get behind the abbreviation:
（2）
Promptly realize recommending the output of full-bridge.
The biasing means of recommending the full-bridge magnetic field sensor is: as shown in Figure 8; Recommend full-bridge along 11 pairs of magnetizing directions and apply a high-intensity magnetic field; After removing external magnetic field; The magnetic field 10 at 13 places, gap between the permanent magnet 15 is produced by the virtual magnetic charge at 14 places, border, and perpendicular to border 14, its concrete biased direction is shown in the arrow 10 of Fig. 8.
The DOM 8 of Fig. 7 and the pinned magnetic layer of recommending bridge sensor shown in Figure 8 is identical; Can on same chip, recommend full-bridge sensors through direct formation of one-time process; Need not adopt multicore sheet packaging technology, need not carry out the local auxiliary heat annealing of LASER HEATING yet.
Fig. 9 is a kind of schematic layout pattern of recommending the full-bridge magnetic field sensor.As shown in the figure; Several MTJ elements 1 are together in series as the magneto-resistor of an equivalence; After magnetizing, the permanent magnet 15 of MTJ element 1 both sides is setovered for the free layer of element provides 10 pairs of free layer DOM 7 of magnetic bias field, and its sensitive direction 9 is perpendicular to pinning layer DOM 8.The pad 23 of sensor can be connected on the packaging pin of ASIC integrated circuit or lead frame through lead-in wire.
Figure 10 a to Figure 10 e is the analog result of recommending bridge design and output thereof of sensitive direction perpendicular to easy axis direction.Two output maps of Figure 10 b and Figure 10 c are the curve of output of magneto-resistor of the adjacent position of saturation field 50 Oe and 100 Oe, and two output maps of Figure 10 d and Figure 10 e are the full-bridge curve of output of saturation field 50 Oe and 100 Oe.
Figure 11 a to Figure 11 e is the analog result of recommending bridge design and output thereof that sensitive direction is parallel to easy axis direction.Two output maps of Figure 11 b and Figure 11 c are the curve of output of magneto-resistor of the adjacent position of saturation field 50 Oe and 100 Oe, and two output maps of Figure 11 d and Figure 11 e are the full-bridge curve of output of saturation field 50 Oe and 100 Oe.
Usually in actual measurement, the curve of output of MTJ is not to be ideal curve as shown in Figure 2, has certain skew, in practical operation, need apply the outfield to it and make it saturated, thereby carry out its off-set value of calibration measurement.Hot-wire coil 22 is set above magnetoresistive element; The magnetic field that utilizes hot-wire coil 22 to produce applies an outfield to free layer; This design can realize the preset and calibration to output offset after chip preparation encapsulation; Have very big handlingly, can carry out consistency operation according to the demand that reality is used.As shown in the figure, the live width that produces the lead of calibration field is 5 μ m, with the reverse lead live width of calibration current be 3 μ m, the gap width between lead is 2.5 μ m.The pad 23 of sensor can be connected on the packaging pin of ASIC integrated circuit or lead frame through lead-in wire.Pad 24 is the input and output side of hot-wire coil.
Each permanent magnet has certain thickness, and the thickness through permanent magnet is set is to change the intensity of permanent magnet bias field.
More than combine diagram to be illustrated to the specific embodiment of the utility model, clearly, on the basis of the scope of not leaving the utility model and spirit, can much revise prior art and technology.In the affiliated technical field of the utility model, the common knowledge of a GPRS just can be carried out diversified change in the technological main idea scope of the utility model.
Claims (9)
1. one chip push-pull bridge magnetic field sensor; It comprises the magnetoresistive element that a plurality of bridge-types connect; Each magnetoresistive element comprises the sensitive element with sensitive direction; Sensitive element is MTJ element, AMR element or GMR element, it is characterized in that: the both sides of said each magnetoresistive element are provided with and are used for a pair of permanent magnet that the DOM of said magnetoresistive element is setovered.
2. one chip push-pull bridge magnetic field sensor according to claim 1 is characterized in that: the length of each permanent magnet greater than this to the marginalisation effect of the width between the permanent magnet to reduce to produce between every pair of permanent magnet.
3. one chip push-pull bridge magnetic field sensor according to claim 1; It is characterized in that: each permanent magnet has the boundary edge near corresponding magnetoresistive element; The sensitive direction of this boundary edge and described one chip push-pull bridge magnetic field sensor is an angle, and this angle is acute angle or obtuse angle.
4. one chip push-pull bridge magnetic field sensor according to claim 1 is characterized in that: the permanent magnet that is positioned at the magnetoresistive element both sides produces a permanent magnet bias field, and this permanent magnet bias field has a permanent magnet bias direction.
5. one chip push-pull bridge magnetic field sensor according to claim 4 is characterized in that: described each permanent magnet has certain thickness, and the thickness through permanent magnet is set is to change the intensity of permanent magnet bias field.
6. one chip push-pull bridge magnetic field sensor according to claim 4; It is characterized in that: each permanent magnet has the boundary edge near corresponding magnetoresistive element, and the magnetizing direction through permanent magnet is set and the angle that boundary edge became of said permanent magnet are to change the intensity of permanent magnet bias field.
7. one chip push-pull bridge magnetic field sensor according to claim 1 is characterized in that: described each permanent magnet has the shape that produces even magnetic bias field.
8. one chip push-pull bridge magnetic field sensor according to claim 1 is characterized in that: be arranged mutually parallel between the said magnetoresistive element.
9. one chip push-pull bridge magnetic field sensor according to claim 1 is characterized in that: be provided with the hot-wire coil that is used for presetting and calibrating output offset around the said magnetoresistive element, insulation mutually between said magnetoresistive element and the hot-wire coil.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201120409446 CN202421483U (en) | 2011-04-06 | 2011-10-25 | Single-chip push-pull bridge-type magnetic field sensor |
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| CN201110084595.X | 2011-04-06 | ||
| CN201110084595XA CN102226836A (en) | 2011-04-06 | 2011-04-06 | Single-chip bridge magnetic field sensor and preparation method thereof |
| CN2011200970423U CN202013413U (en) | 2011-04-06 | 2011-04-06 | Single chip bridge type magnetic field sensor |
| CN201120097042.3 | 2011-04-06 | ||
| CN 201120409446 CN202421483U (en) | 2011-04-06 | 2011-10-25 | Single-chip push-pull bridge-type magnetic field sensor |
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| CN 201110326762 Active CN102331564B (en) | 2011-04-06 | 2011-10-25 | Single chip bridge magnetic field sensor and preparation method thereof |
| CN201110326725.6A Active CN102540112B (en) | 2011-04-06 | 2011-10-25 | Single chip pull-push bridge type magnetic field sensor |
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| CN201110326725.6A Active CN102540112B (en) | 2011-04-06 | 2011-10-25 | Single chip pull-push bridge type magnetic field sensor |
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| FR2830621B1 (en) * | 2001-10-09 | 2004-05-28 | Commissariat Energie Atomique | STRUCTURE FOR SENSOR AND MAGNETIC FIELD SENSOR |
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| CN102226836A (en) * | 2011-04-06 | 2011-10-26 | 江苏多维科技有限公司 | Single-chip bridge magnetic field sensor and preparation method thereof |
| CN202421483U (en) * | 2011-04-06 | 2012-09-05 | 江苏多维科技有限公司 | Single-chip push-pull bridge-type magnetic field sensor |
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- 2011-10-25 CN CN 201120409446 patent/CN202421483U/en not_active Expired - Lifetime
- 2011-10-25 CN CN 201110326762 patent/CN102331564B/en active Active
- 2011-10-25 CN CN201110326725.6A patent/CN102540112B/en active Active
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| EP3022569A4 (en) * | 2013-07-19 | 2017-01-11 | InvenSense, Inc. | Application specific integrated circuit with integrated magnetic sensor |
| CN105579860B (en) * | 2013-07-19 | 2019-10-08 | 应美盛有限公司 | Specific integrated circuit with integrated magnetic sensor |
| CN103592608A (en) * | 2013-10-21 | 2014-02-19 | 江苏多维科技有限公司 | Push-pull bridge type magnetic sensor for high-intensity magnetic field |
| CN103592608B (en) * | 2013-10-21 | 2015-12-23 | 江苏多维科技有限公司 | A kind of push-pull bridge type magnetic sensor for high-intensity magnetic field |
| EP3244226A4 (en) * | 2015-01-07 | 2018-09-12 | Multidimension Technology Co., Ltd. | Magneto-resistance sensor linear in z-axis having single chip and calibration/reset coil |
| CN115079061A (en) * | 2022-05-05 | 2022-09-20 | 歌尔微电子股份有限公司 | Micro-electro-mechanical system differential magnetic sensor, sensor monomer and electronic equipment |
| CN117250571A (en) * | 2023-09-18 | 2023-12-19 | 苏州纳芯微电子股份有限公司 | High-precision magnetic field sensing device and motion sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102540112A (en) | 2012-07-04 |
| CN102331564B (en) | 2013-02-13 |
| CN102331564A (en) | 2012-01-25 |
| CN102540112B (en) | 2014-04-16 |
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