CN108983125A - A kind of magnetoresistive sensor - Google Patents

A kind of magnetoresistive sensor Download PDF

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Publication number
CN108983125A
CN108983125A CN201710403082.8A CN201710403082A CN108983125A CN 108983125 A CN108983125 A CN 108983125A CN 201710403082 A CN201710403082 A CN 201710403082A CN 108983125 A CN108983125 A CN 108983125A
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CN
China
Prior art keywords
magnetoresistive sensor
anisotropic magnetoresistive
branch
resistance branch
sensor
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CN201710403082.8A
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Chinese (zh)
Inventor
邹波
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Senodia Technologies Shanghai Co Ltd
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Senodia Technologies Shanghai Co Ltd
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Priority to CN201710403082.8A priority Critical patent/CN108983125A/en
Publication of CN108983125A publication Critical patent/CN108983125A/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors

Abstract

The embodiment of the invention discloses a kind of magnetoresistive sensors, first wheatstone bridge circuits described in the magnetoresistive sensor and the second wheatstone bridge circuits can measure the corresponding magnetic flux in magnetic field on first direction and second direction, the third wheatstone bridge circuits can measure the corresponding magnetic flux in magnetic field on third direction, so that magnetoresistive sensor provided by the embodiment of the present invention can not only measure detection perpendicular to the magnetic flux of base plan, the magnetic flux for being parallel to base plan can also be detected, to expand the use scope of anisotropic magnetoresistive sensor.

Description

A kind of magnetoresistive sensor
Technical field
The present invention relates to anisotropic magnetoresistive sensor technical field more particularly to a kind of magnetoresistive sensors.
Background technique
Anisotropic magnetoresistive (AMR, Anisotropic Magnetoresistance) sensor is novel in modern industry Magnetoresistance effect sensor is just becoming more and more important in electronic compass application.It is magnetic in addition to anisotropic magnetoresistive sensor There are also hall effect sensor, giant magnetoresistance (GMR) sensor, tunnel magneto-resistive sensors etc. at present for sensor, but due to each to different Property magnetoresistive sensor sensitivity with higher, and technology is more mature, application is more extensive.
Currently, anisotropic magnetoresistive sensor in the prior art only can detecte the magnetic flux perpendicular to device plane, And the magnetic flux for being parallel to device plane cannot be detected, to limit the application range of anisotropic magnetoresistive sensor.
Summary of the invention
In order to solve the above technical problems, the embodiment of the invention provides a kind of magnetoresistive sensor, with detect simultaneously perpendicular to The magnetic flux of device plane and the magnetic flux for being parallel to device plane, expand the application range of anisotropic magnetoresistive sensor.
To solve the above problems, the embodiment of the invention provides following technical solutions:
A kind of magnetoresistive sensor, comprising:
Substrate；
Multiple convex blocks, the convex block are located at the substrate first surface, incline including the first opposite inclined surface and second Skewed surface, between first inclined surface and the first surface have the first interior angle, second inclined surface with it is described There is the second interior angle, first interior angle is identical with the second interior angle size between first surface；
First wheatstone bridge circuits, first wheatstone bridge circuits include four the first bridge arms, each described First bridge arm includes the first anisotropic magnetoresistive sensor and the second anisotropic magnetoresistive sensor, first anisotropy Magnetoresistive sensor and the second anisotropic magnetoresistive sensor are set on first inclined surface；
Second wheatstone bridge circuits, second wheatstone bridge circuits include four the second bridge arms, each described Second bridge arm includes third anisotropic magnetoresistive sensor and the 4th anisotropic magnetoresistive sensor, the third anisotropy Magnetoresistive sensor and the 4th anisotropic magnetoresistive sensor are arranged on second inclined surface；
Third wheatstone bridge circuits, the third wheatstone bridge circuits include multiple the first surface being arranged in 5th anisotropic magnetoresistive sensor；
Wherein, first wheatstone bridge circuits and the second wheatstone bridge circuits are for measuring first direction and second Magnetic field on direction, the third wheatstone bridge circuits are used to measure magnetic field on third direction, the first direction, described Second direction and the third direction are vertical two-by-two；The throwing of first anisotropic magnetoresistive sensor on the first surface Shadow is parallel with the third direction along fourth direction rotation third angle, and second anisotropic magnetoresistive sensor is in the first table It is parallel with the third direction that projection on face along the 5th direction rotates third angle, the fourth direction be clockwise, 5th direction is counterclockwise or the fourth direction is that counterclockwise, the 5th direction is clockwise；
The projection of the third anisotropic magnetoresistive sensor on the first surface rotates fourth angle along the 6th direction Degree is parallel with the third direction, and the projection of the 4th anisotropic magnetoresistive sensor on the first surface is along the 7th side Parallel with the third direction to rotation fourth angle, the 6th direction is that clockwise, the 7th direction is the inverse time Needle direction or the 6th direction are that counterclockwise, the 7th direction is the third angle and described clockwise Fourth angle is all larger than 0 °.
Optionally, the third angle is less than or equal to 45 °；The fourth angle is less than or equal to 45 °.
Optionally, the third angle and fourth angle are w °, and the value range of w is 0 ° -45 °, including endpoint value.
Optionally, first Wheatstone bridge includes: first resistor branch, second resistance branch, 3rd resistor branch With four resistance branch of the 4th resistance branch；
Second Wheatstone bridge includes: the 5th resistance branch, the 6th resistance branch, the 7th resistance branch and the 8th electricity Hinder four resistance branch of branch.
Optionally, the basal plane that the convex block is in contact with the first surface is rectangle.
Optionally, the first anisotropic magnetoresistive sensor of the first resistor branch, second resistance branch it is first each Anisotropy magnetoresistive sensor, the first anisotropic magnetoresistive sensor of 3rd resistor branch, the 4th resistance branch first respectively to different Property magnetoresistive sensor, the first anisotropic magnetoresistive sensor of the 5th resistance branch, the 6th resistance branch first respectively to Anisotropy Magnetoresistance sensor, the first anisotropic magnetoresistive sensor of the 7th resistance branch, the 8th resistance branch first respectively to different The projection of property magnetoresistive sensor on the first surface rotate counterclockwise ω ° it is parallel with the third direction；
Second anisotropic magnetic of the second anisotropic magnetoresistive sensor of the first resistor branch, second resistance branch Hinder the second anisotropic magnetoresistive of sensor, the second anisotropic magnetoresistive sensor of 3rd resistor branch, the 4th resistance branch Second anisotropic magnetic of sensor, the second anisotropic magnetoresistive sensor of the 5th resistance branch, the 6th resistance branch Hinder the second anisotropic magnetoresistive of sensor, the second anisotropic magnetoresistive sensor of the 7th resistance branch, the 8th resistance branch The projection of sensor on the first surface be rotated in a clockwise direction ω ° it is parallel with third direction.
Optionally, the second anisotropic magnetoresistive sensor of the first resistor branch, second resistance branch it is second each Anisotropy magnetoresistive sensor, the first anisotropic magnetoresistive sensor of 3rd resistor branch, the 4th resistance branch first respectively to Anisotropy Magnetoresistance sensor, the second anisotropic magnetoresistive sensor of the 5th resistance branch, the 6th resistance branch it is second each Anisotropy magnetoresistive sensor, the first anisotropic magnetoresistive sensor of the 7th resistance branch, the 8th resistance branch first respectively to The projection of Anisotropy Magnetoresistance sensor on the first surface rotate counterclockwise ω ° it is parallel with the third direction；
First anisotropic magnetic of the first anisotropic magnetoresistive sensor of the first resistor branch, second resistance branch Hinder the second anisotropic magnetoresistive of sensor, the second anisotropic magnetoresistive sensor of 3rd resistor branch, the 4th resistance branch First anisotropic magnetic of sensor, the first anisotropic magnetoresistive sensor of the 5th resistance branch, the 6th resistance branch Hinder the second anisotropic magnetoresistive of sensor, the second anisotropic magnetoresistive sensor of the 7th resistance branch, the 8th resistance branch The projection of sensor on the first surface rotate clockwise ω ° it is parallel with the third direction.
Optionally, the second anisotropic magnetoresistive sensor of the first resistor branch, second resistance branch it is second each Anisotropy magnetoresistive sensor, the second anisotropic magnetoresistive sensor of 3rd resistor branch, the 4th resistance branch second respectively to Anisotropy Magnetoresistance sensor, the second anisotropic magnetoresistive sensor of the 5th resistance branch, the 6th resistance branch it is second each Anisotropy magnetoresistive sensor, the second anisotropic magnetoresistive sensor of the 7th resistance branch, the 8th resistance branch second respectively to The projection of Anisotropy Magnetoresistance sensor on the first surface rotate counterclockwise ω ° it is parallel with the third direction；
First anisotropic magnetic of the first anisotropic magnetoresistive sensor of the first resistor branch, second resistance branch Hinder the first anisotropic magnetoresistive of sensor, the first anisotropic magnetoresistive sensor of 3rd resistor branch, the 4th resistance branch First anisotropic magnetic of sensor, the first anisotropic magnetoresistive sensor of the 5th resistance branch, the 6th resistance branch Hinder the first anisotropic magnetoresistive of sensor, the first anisotropic magnetoresistive sensor of the 7th resistance branch, the 8th resistance branch The projection of sensor on the first surface rotate clockwise ω ° it is parallel with the third direction.
Optionally, the first anisotropic magnetoresistive sensor of the first resistor branch, second resistance branch it is first each Anisotropy magnetoresistive sensor, the first anisotropic magnetoresistive sensor of the 5th resistance branch, the 6th resistance branch first Anisotropic magnetoresistive sensor, the second anisotropic magnetoresistive sensor of 3rd resistor branch, the 4th resistance branch it is second each Anisotropy magnetoresistive sensor, the second anisotropic magnetoresistive sensor of the 7th resistance branch, the 8th resistance branch second respectively to The projection of Anisotropy Magnetoresistance sensor on the first surface rotate counterclockwise ω ° it is parallel with the third direction；
Second anisotropic magnetic of the second anisotropic magnetoresistive sensor of the first resistor branch, second resistance branch Hinder the first anisotropic magnetoresistive of sensor, the first anisotropic magnetoresistive sensor of 3rd resistor branch, the 4th resistance branch Second anisotropic magnetic of sensor, the second anisotropic magnetoresistive sensor of the 5th resistance branch, the 6th resistance branch Hinder the first anisotropic magnetoresistive of sensor, the first anisotropic magnetoresistive sensor of the 7th resistance branch, the 8th resistance branch The projection of sensor on the first surface rotate clockwise ω ° it is parallel with the third direction.
Optionally, the basal plane that the convex block is in contact with the first surface is trapezoidal.
Optionally, the first anisotropic magnetoresistive sensor of the first resistor branch, second resistance branch it is first each Anisotropy magnetoresistive sensor, the first anisotropic magnetoresistive sensor of 3rd resistor branch, the 4th resistance branch first respectively to Anisotropy Magnetoresistance sensor, the second anisotropic magnetoresistive sensor of the 5th resistance branch, the 6th resistance branch it is second each Anisotropy magnetoresistive sensor, the second anisotropic magnetoresistive sensor of the 7th resistance branch, the 8th resistance branch second respectively to The projection of Anisotropy Magnetoresistance sensor on the first surface rotate counterclockwise ω ° it is parallel with the third direction；
Second anisotropic magnetic of the second anisotropic magnetoresistive sensor of the first resistor branch, second resistance branch Hinder the second anisotropic magnetoresistive of sensor, the second anisotropic magnetoresistive sensor of 3rd resistor branch, the 4th resistance branch First anisotropic magnetic of sensor, the first anisotropic magnetoresistive sensor of the 5th resistance branch, the 6th resistance branch Hinder the first anisotropic magnetoresistive of sensor, the first anisotropic magnetoresistive sensor of the 7th resistance branch, the 8th resistance branch The projection of sensor on the first surface rotate clockwise ω ° it is parallel with the third direction.
Optionally, the first anisotropic magnetoresistive sensor of the first resistor branch, second resistance branch it is first each Anisotropy magnetoresistive sensor, the second anisotropic magnetoresistive sensor of 3rd resistor branch, the 4th resistance branch second respectively to Anisotropy Magnetoresistance sensor, the second anisotropic magnetoresistive sensor of the 5th resistance branch, the 6th resistance branch it is second each Anisotropy magnetoresistive sensor, the first anisotropic magnetoresistive sensor of the 7th resistance branch, the 8th resistance branch first respectively to The projection of Anisotropy Magnetoresistance sensor on the first surface rotate counterclockwise ω ° it is parallel with the third direction；
Second anisotropic magnetic of the second anisotropic magnetoresistive sensor of the first resistor branch, second resistance branch Hinder the first anisotropic magnetoresistive of sensor, the first anisotropic magnetoresistive sensor of 3rd resistor branch, the 4th resistance branch First anisotropic magnetic of sensor, the first anisotropic magnetoresistive sensor of the 5th resistance branch, the 6th resistance branch Hinder the second anisotropic magnetoresistive of sensor, the second anisotropic magnetoresistive sensor of the 7th resistance branch, the 8th resistance branch The projection of sensor on the first surface rotate clockwise ω ° it is parallel with the third direction.
Optionally, the second anisotropic magnetoresistive sensor of the first resistor branch, second resistance branch it is second each Anisotropy magnetoresistive sensor, the first anisotropic magnetoresistive sensor of the 5th resistance branch, the 6th resistance branch first Anisotropic magnetoresistive sensor, the first anisotropic magnetoresistive sensor of 3rd resistor branch, the 4th resistance branch it is first each Anisotropy magnetoresistive sensor, the second anisotropic magnetoresistive sensor of the 7th resistance branch, the 8th resistance branch second respectively to The projection of Anisotropy Magnetoresistance sensor on the first surface rotate counterclockwise ω ° it is parallel with the third direction；
First anisotropic magnetic of the first anisotropic magnetoresistive sensor of the first resistor branch, second resistance branch Hinder the second anisotropic magnetoresistive of sensor, the second anisotropic magnetoresistive sensor of 3rd resistor branch, the 4th resistance branch Second anisotropic magnetic of sensor, the second anisotropic magnetoresistive sensor of the 5th resistance branch, the 6th resistance branch Hinder the first anisotropic magnetoresistive of sensor, the first anisotropic magnetoresistive sensor of the 7th resistance branch, the 8th resistance branch The projection of sensor on the first surface rotate clockwise ω ° it is parallel with the third direction.
Optionally, the second anisotropic magnetoresistive sensor of the first resistor branch, second resistance branch it is second each Anisotropy magnetoresistive sensor, the second anisotropic magnetoresistive sensor of 3rd resistor branch, the 4th resistance branch second respectively to Anisotropy Magnetoresistance sensor, the first anisotropic magnetoresistive sensor of the 5th resistance branch, the 6th resistance branch it is first each Anisotropy magnetoresistive sensor, the first anisotropic magnetoresistive sensor of the 7th resistance branch, the 8th resistance branch first respectively to The projection of Anisotropy Magnetoresistance sensor on the first surface rotate counterclockwise ω ° it is parallel with the third direction；
First anisotropic magnetic of the first anisotropic magnetoresistive sensor of the first resistor branch, second resistance branch Hinder the first anisotropic magnetoresistive of sensor, the first anisotropic magnetoresistive sensor of 3rd resistor branch, the 4th resistance branch Second anisotropic magnetic of sensor, the second anisotropic magnetoresistive sensor of the 5th resistance branch, the 6th resistance branch Hinder the second anisotropic magnetoresistive of sensor, the second anisotropic magnetoresistive sensor of the 7th resistance branch, the 8th resistance branch The projection of sensor on the first surface rotate clockwise ω ° it is parallel with the third direction.
Compared with prior art, above-mentioned technical proposal has the advantage that
In magnetoresistive sensor provided by the embodiment of the present invention, first wheatstone bridge circuits and the second favour stone electricity Bridge circuit can measure the corresponding magnetic flux in magnetic field on first direction and second direction, and the third wheatstone bridge circuits can To measure the corresponding magnetic flux in the magnetic field on third direction, so that magnetoresistive sensor provided by the embodiment of the present invention is not only Detection can be measured perpendicular to the magnetic flux of base plan, the magnetic flux for being parallel to base plan can also be detected, to expand each The use scope of anisotropy magnetoresistive sensor.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with It obtains other drawings based on these drawings.
Fig. 1 is convex block in magnetoresistive sensor, the first wheatstone bridge circuits provided by one embodiment of the invention and the The relative position schematic diagram of two wheatstone bridge circuits；
Fig. 2 be provided by one embodiment of the invention in magnetoresistive sensor the first wheatstone bridge circuits and the second favour this The electrical block diagram of energization bridge circuit；
Fig. 3 be provided by one embodiment of the invention in magnetoresistive sensor the first wheatstone bridge circuits and the second favour this The structural schematic diagram of energization bridge circuit；
Fig. 4 is the first anisotropic magnetoresistive sensor or second in magnetoresistive sensor provided by one embodiment of the invention The structural schematic diagram of anisotropic magnetoresistive sensor；
Fig. 5 be the electric current in magnetization vector M and first anisotropic magnetoresistive sensor flow to angulation with The curve synoptic diagram of magnetic resistance change rate ratio △ R/R；
The schematic shapes of convex block in magnetoresistive sensor provided by Fig. 6 one embodiment of the invention；
The schematic shapes of convex block in magnetoresistive sensor provided by Fig. 7 another embodiment of the present invention；
Fig. 8 is the electrical block diagram of wheatstone bridge circuits；
The cross-sectional view of convex block in magnetoresistive sensor provided by Fig. 9 one embodiment of the invention；
Figure 10 is the first wheatstone bridge circuits and second in magnetoresistive sensor provided by another embodiment of the present invention The structural schematic diagram of wheatstone bridge circuits；
Figure 11 is the first wheatstone bridge circuits and second in magnetoresistive sensor provided by another embodiment of the invention The structural schematic diagram of wheatstone bridge circuits；
Figure 12 is the first wheatstone bridge circuits and second in magnetoresistive sensor provided by further embodiment of the present invention The structural schematic diagram of wheatstone bridge circuits；
Figure 13 is the first wheatstone bridge circuits and second in magnetoresistive sensor provided by another embodiment of the invention The structural schematic diagram of wheatstone bridge circuits；
Figure 14 is the first wheatstone bridge circuits and second in magnetoresistive sensor provided by further embodiment of the present invention The structural schematic diagram of wheatstone bridge circuits；
Figure 15 is the first wheatstone bridge circuits and second in magnetoresistive sensor provided by another embodiment of the invention The structural schematic diagram of wheatstone bridge circuits；
Figure 16 is the first wheatstone bridge circuits and second in magnetoresistive sensor provided by further embodiment of the present invention The structural schematic diagram of wheatstone bridge circuits.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other Embodiment shall fall within the protection scope of the present invention.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
The embodiment of the invention provides a kind of magnetoresistive sensor, which includes: substrate, multiple convex blocks, first Wheatstone bridge circuits, the second wheatstone bridge circuits and third wheatstone bridge circuits.As shown in Figure 1,1 convex block 10 In the first surface of the substrate, including opposite the first inclined surface 11 and the second inclined surface 12, first nauropemeter There is the first interior angle a1 between face 11 and the first surface, have between second inclined surface 12 and the first surface The second interior angle a2, first angle and the second corner dimension are identical.
Specifically, in one embodiment of the invention, shape between first inclined surface 11 and the first surface At the first interior angle a1 be acute angle, it is also sharp that the second interior angle a2 is formed between second inclined surface 12 and the first surface Angle, but the present invention is to this and without limitation, specifically depends on the circumstances.
As shown in Figures 2 and 3, first wheatstone bridge circuits include four the first bridge arms, specially R1, R2, R3 and R4, each first bridge arm include the first anisotropic magnetoresistive sensor and the second anisotropic magnetoresistive sensor, Respectively R1a, R1b, R2a, R2b, R3a, R3b, R4a and R4b, first anisotropic magnetoresistive sensor and second respectively to Anisotropy Magnetoresistance sensor is set on first inclined surface 11；It should be noted that in embodiments of the present invention, an institute State corresponding first inclined surface of the first anisotropic magnetoresistive sensor, the second anisotropic magnetoresistive sensing Device corresponds to first inclined surface 11, first anisotropic magnetoresistive sensor and second anisotropic magnetoresistive Sensor corresponds to the first different inclined surfaces 11；
Second wheatstone bridge circuits, second wheatstone bridge circuits include four the second bridge arms, specially R5, R6, R7 and R8, each second bridge arm include third anisotropic magnetoresistive sensor and the 4th anisotropic magnetoresistive sensing Device, respectively R5a, R5b, R6a, R6b, R7a, R7b, R8a and R8b, the third anisotropic magnetoresistive sensor and the 4th is respectively Anisotropy magnetoresistive sensor is arranged on second inclined surface 12；It should be noted that in embodiments of the present invention, one Corresponding second inclined surface 12 of the third anisotropic magnetoresistive sensor, the 4th anisotropic magnetoresistive Sensor correspond to second inclined surface 12, and the third anisotropic magnetoresistive sensor with the described 4th respectively to different Property magnetoresistive sensor corresponds to the second different inclined surfaces 12.
Third wheatstone bridge circuits (not shown), the third wheatstone bridge circuits include multiple be arranged in institute State the 5th anisotropic magnetoresistive sensor of first surface, the 5th anisotropic magnetoresistive sensor and the first surface pair It answers, i.e. the first surface of the corresponding convex block of the 4th anisotropic magnetoresistive sensor；
Wherein, first wheatstone bridge circuits and the second wheatstone bridge circuits are for measuring first direction and second The corresponding magnetic flux in magnetic field on direction, the third wheatstone bridge circuits are used to measure the corresponding magnetic in magnetic field on third direction Logical, the first direction, the second direction and the third direction are vertical two-by-two.
Moreover, in embodiments of the present invention, the throwing of first anisotropic magnetoresistive sensor on the first surface Shadow is parallel with the third direction along fourth direction rotation third angle, and second anisotropic magnetoresistive sensor is described the It is parallel with the third direction that projection on one surface along the 5th direction rotates third angle, and the fourth direction is side clockwise To the 5th direction is counterclockwise or the fourth direction is that counterclockwise, the 5th direction is square clockwise To；The projection of the third anisotropic magnetoresistive sensor on the first surface rotates fourth angle and institute along the 6th direction State that third direction is parallel, the projection of the 4th anisotropic magnetoresistive sensor on the first surface is rotated along the 7th direction Fourth angle is parallel with the third direction, and the 6th direction is that clockwise, the 7th direction is counter clockwise direction, Or the 6th direction is that counterclockwise, the 7th direction is the third angle and the fourth angle clockwise Degree is all larger than 0 °
It can be seen that magnetoresistive sensor provided by the embodiment of the present invention can measure first direction, second direction and The corresponding magnetic flux in magnetic field on three three, directions direction, so that magnetoresistive sensor provided by the embodiment of the present invention not only may be used With measure detection perpendicular to base plan magnetic flux, the magnetic flux for being parallel to base plan can also be detected, thus expand it is each to The use scope of Anisotropy Magnetoresistance sensor.
Moreover, first anisotropic magnetoresistive sensor is in institute in magnetoresistive sensor provided by the embodiment of the present invention The projection stated on first surface is parallel with the third direction along fourth direction rotation third angle, second anisotropic magnetic It is parallel with the third direction that the projection on the first surface of resistance sensor along the 5th direction rotates third angle, and described the Four directions are that clockwise, the 5th direction be counterclockwise or the fourth direction is counter clockwise direction, described the Five directions are that clockwise, third angle is greater than 0 °, make first anisotropic magnetic due to technological fluctuation to alleviate Resistance sensor and the length extending direction of second anisotropic magnetoresistive sensor are difficult to be strictly parallel to the third direction Caused by detection error, improve the measurement accuracy of the magnetoresistive sensor.
Similarly, the projection of the third anisotropic magnetoresistive sensor on the first surface rotates along the 6th direction Four angles are parallel with the third direction, and the projection of the 4th anisotropic magnetoresistive sensor on the first surface is along It is parallel with the third direction that seven directions rotate fourth angle, and the 6th direction is clockwise that the 7th direction is Counterclockwise or the 6th direction is that counterclockwise, the 7th direction is that clockwise, the fourth angle is big In 0 °, make the third anisotropic magnetoresistive sensor and the 4th anisotropic magnetoresistive due to technological fluctuation to alleviate The length extending direction of sensor is difficult to be strictly parallel to detection error caused by the third direction, improves the magnetic resistance and passes The measurement accuracy of sensor.
Optionally, on the basis of the above embodiments, in one embodiment of the invention, the third angle be less than or Equal to 45 °；The fourth angle is less than or equal to 45 °.
It should be noted that anisotropic magnetoresistive sensor (i.e. AMR sensor) is by depositing on a silicon substrate and by pattern The ferronickel film (permalloy) of chemical conversion resistor is made.When specific manufacture, which deposits under high-intensity magnetic field, to utilize The high-intensity magnetic field sets the preferred orientation (easy magnetizing axis) of the magnetization vector M of resistor made of ferronickel film.Wherein, The preferred orientation of the magnetization vector M is the length extending direction of AMR sensor.Perpendicular to AMR sensor preferred orientation There are externally-applied magnetic field H on directionApplyIn the case where, the resistance value of AMR sensor depends on the size in applied magnetic field.
In one particular embodiment of the present invention, in order to improve linear reluctance sensitivity, as shown in figure 4, described first Anisotropic magnetoresistive sensor is that spiral bar biases anisotropic magnetoresistive sensor, so that first anisotropic magnetoresistive passes Electric current and magnetization vector M in sensor are flowed at predetermined angle (such as 45 °), in the side perpendicular to AMR sensor preferred orientation Apply magnetic field H in (such as X-direction)ApplyWhen, magnetization vector M rotation ± β degree, so that the first anisotropic magnetoresistive senses The magnetic resistance change rate △ R of device.Specifically, as shown in figure 5, when in magnetization vector M and first anisotropic magnetoresistive sensor When flowing to angulation from 45 ° of rotations to smaller angle (45 °-β °) of electric current, △ R/R becomes larger；When magnetization vector M with Electric current in first anisotropic magnetoresistive sensor flow to angulation from 45 ° of rotations to bigger angle (45 °+ β °) when, △ R/R becomes smaller.
Similarly, in a preferred embodiment of the invention, second anisotropic magnetoresistive sensor is that spiral bar is inclined Set anisotropic magnetoresistive sensor；The third anisotropic magnetoresistive sensor is that spiral bar biases anisotropic magnetoresistive sensing Device；4th anisotropic magnetoresistive sensor is that spiral bar biases anisotropic magnetoresistive sensor；5th anisotropy Magnetoresistive sensor is that spiral bar biases anisotropic magnetoresistive sensor.But the present invention is to this and without limitation, specifically optionally and It is fixed.
It should be noted that in embodiments of the present invention, the convex block further includes opposite third inclined surface and the 4th Inclined surface, one side of the third inclined surface connect with first inclined surface, another side and described second Inclined surface connects, and similarly, a side of the 4th inclined surface connects with first inclined surface, another side Connect with second inclined surface, wherein the third inclined surface and the 4th inclined surface and the first surface The length on the boundary being in contact may be the same or different, i.e., the basal plane that the described convex block is in contact with the first surface can Think rectangle, as shown in Figure 6, or it is trapezoidal, as shown in fig. 7, it is of the invention to this and without limitation, specifically optionally and It is fixed.
Specifically, based on any of the above embodiments, in one embodiment of the invention, the first favour stone Bridge circuit includes four the first bridge arms, respectively first resistor branch R1, second resistance branch R2,3rd resistor branch R3 With the 4th resistance branch R4；Second wheatstone bridge circuits include four the second bridge arms, respectively the 5th resistance branch R5, the 6th resistance branch R6, the 7th resistance branch R7 and the 8th resistance branch R8.
As shown in figure 8, Fig. 8 shows the structural schematic diagram of wheatstone bridge circuits, which includes electricity Hinder branch R01, resistance branch R02, resistance branch R03 and resistance branch R04.As can be seen from Figure 8, wheatstone bridge circuits Differential voltage Vout meet:
Assuming that R01=R02=R03=R04=R, magnetic resistance change rate caused by externally-applied magnetic field is △ R, then:
Therefore, the differential voltage Vout1 of first wheatstone bridge circuits meets:
Assuming that R1=R2=R3=R4=R, magnetic resistance change rate caused by externally-applied magnetic field is △ R, then:
The differential voltage Vout2 of second wheatstone bridge circuits meets:
Assuming that R5=R6=R7=R8=R, magnetic resistance change rate caused by externally-applied magnetic field is △ R, then:
It is for w °, to the embodiment of the present invention for ease of description, equal with the third angle and fourth angle below Provided first wheatstone bridge circuits and the second wheatstone bridge circuits are illustrated.
As shown in Figures 2 and 3, Fig. 2 shows in magnetoresistive sensor provided by the embodiment of the present invention, the first favour stone is electric The schematic illustration of bridge circuit and the second wheatstone bridge circuits；Fig. 3 is magneto-resistive transducing provided by one embodiment of the invention In device, the structural schematic diagram of the first wheatstone bridge circuits and the second wheatstone bridge circuits.In embodiments of the present invention, In one wheatstone bridge circuits, first resistor branch R1 includes the first anisotropic magnetoresistive sensor R1a and the second anisotropy Magnetoresistive sensor R1b, wherein the first anisotropic magnetoresistive sensor R1a rotates w ° in the projection of the first surface counterclockwise It is parallel with the third direction, it is denoted as the first anisotropic magnetoresistive sensor R1a herein and the positive of third direction forms third W ° of angle, and be denoted as+w °, the second anisotropic magnetoresistive sensor R1b the projection of first surface rotate clockwise w ° with it is described Third direction is parallel, be denoted as herein the second anisotropic magnetoresistive sensor R1b and third direction negative sense formed third angle at W °, and it is denoted as-w °；Similarly, second resistance branch R2 includes the first anisotropic magnetoresistive sensor R2a and the second anisotropic magnetic Sensor R2b is hindered, the first anisotropic magnetoresistive sensor R2a rotates w ° in the projection of first surface counterclockwise to be put down with third direction Row, is denoted as the first anisotropic magnetoresistive sensor R2a herein and the positive of third direction forms w ° of third angle, and is denoted as+w °, Second anisotropic magnetoresistive sensor R2b the projection of first surface rotate clockwise w ° it is parallel with third direction, be denoted as herein The negative sense of second anisotropic magnetoresistive sensor R2b and third direction forms w ° of third angle, and is denoted as-w °；3rd resistor branch Road R3 includes the first anisotropic magnetoresistive sensor R3a and the second anisotropic magnetoresistive sensor R3b, the first anisotropic magnetoresistive Sensor R3a the projection of first surface rotate counterclockwise w ° it is parallel with third direction, be denoted as the first anisotropic magnetoresistive herein Sensor R3a and the positive of third direction form w ° of third angle, and are denoted as+w °, and the second anisotropic magnetoresistive sensor R3b exists The projection of first surface rotate clockwise w ° it is parallel with third direction, be denoted as herein the second anisotropic magnetoresistive sensor R3b with The negative sense of third direction forms w ° of third angle, and is denoted as-w °；4th resistance branch R4 is sensed including the first anisotropic magnetoresistive Device R4a and the second anisotropic magnetoresistive sensor R4b, the first anisotropic magnetoresistive sensor R4a are inverse in the projection of first surface W ° of hour hands rotation is parallel with third direction, is denoted as the positive shape of the first anisotropic magnetoresistive sensor R4a and third direction herein At w ° of third angle, and+w ° are denoted as, the second anisotropic magnetoresistive sensor R4b rotates clockwise w ° in the projection of first surface Parallel with third direction, the negative sense for being denoted as the second anisotropic magnetoresistive sensor R4b and third direction herein forms third angle W °, and it is denoted as-w °.Then, as shown in figure 9, in first resistor branch R1, second resistance branch R2,3rd resistor branch R3 and In four resistance branch R4, first anisotropic magnetoresistive sensor has the AMR of+w ° of deviation eighth direction (direction Y ') sensitive Degree, the second anisotropic magnetoresistive sensor have the sensitivity of-w ° of deviation eighth direction (direction Y '), and wherein eighth direction is parallel First surface is directed toward in the first inclined surface.
Due to when applying external magnetic field, in the first wheatstone bridge circuits,
In the second wheatstone bridge circuits,
Again due to spiral bar bias, then first anisotropic magnetoresistive sensor deviate eighth direction (direction Y ')+ W ° of generation+△ R；Second anisotropic magnetoresistive sensor is deviateing eighth direction (direction Y ')-w ° of generation-△ R, then, In first wheatstone bridge circuits,
Therefore, in embodiments of the present invention, in a first direction, the differential voltage Vout of the first wheatstone bridge circuits (Y ') is
If R1a=R1b=R2a=R2b=R3a=R3b=R4a=R4b=R, magnetic resistance change rate caused by externally-applied magnetic field is ΔRy', then:
Again due to Δ R+ωOffset Δ R-ω, then:
Similarly, on the tenth direction (direction Z '), the differential voltage Vout (Z ') of the second wheatstone bridge circuits meets:Wherein, the tenth it is oriented parallel to the second inclined surface direction first surface.
If a1=a2=δ, then as can be seen from FIG. 9, Vout (Y ')=(HYcosδ+Hzsinδ)；
Vout (Z ')=(HYcosδ+Hzsinδ)；
Therefore, the corresponding magnetic flux in magnetic field on second direction Y can be obtained by following formula:
HY=cos δ * (Vout (Y ')-Vout (Z '))/2；
The corresponding magnetic flux in magnetic field on third direction Z can be obtained by following formula:
Hz=sin δ * (Vout (Y ')+Vout (Z '))/2.
Due to utilizing the corresponding magnetic flux in magnetic field in third wheatstone bridge circuits measurement third direction (X-direction), ability Domain personnel have been well known, this is no longer described in detail in the present invention.
It can be seen that in magnetoresistive sensor provided by the embodiment of the present invention, first wheatstone bridge circuits and Two wheatstone bridge circuits can measure the corresponding magnetic flux in magnetic field on first direction and second direction, the third favour stone electricity Bridge circuit can measure the corresponding magnetic flux in magnetic field on third direction, so that magneto-resistive transducing provided by the embodiment of the present invention Device can not only measure detection perpendicular to the magnetic flux of base plan, the magnetic flux for being parallel to base plan can also be detected, to expand The big use scope of anisotropic magnetoresistive sensor.
It should be noted that in embodiments of the present invention, the third angle and the fourth angle only represent numerical value, no Represent direction, the first inclined surface of same convex block and the inclined direction of the anisotropic magnetoresistive sensor on the second inclined surface Can be in the same direction, it can also be different.
Below with reference to specific implementation, by taking the third angle and fourth angle are w ° as an example, the present invention is implemented Magnetoresistive sensor provided by example is illustrated.In embodiments of the present invention, the multiple convex block include the first convex block, it is second convex Block, third convex block, the 4th convex block, the 5th convex block, the 6th convex block, the 7th convex block and the 8th convex block.
Year in one embodiment of the invention, the basal plane that each convex block is contacted with the substrate in the multiple convex block are square Shape.
As shown in figure 3, in one embodiment of the invention, the first anisotropic magnetoresistive of the first resistor branch R1 Sensor R1a, the first anisotropic magnetoresistive sensor R2a of second resistance branch R2,3rd resistor branch R3 first respectively to Anisotropy Magnetoresistance sensor R3a, the first anisotropic magnetoresistive sensor R4a of the 4th resistance branch R4, the 5th resistance branch The first anisotropic magnetoresistive sensor R5a of R5, the first anisotropic magnetoresistive sensor R6a of the 6th resistance branch R6, the 7th The first anisotropic magnetoresistive sensor of the first anisotropic magnetoresistive sensor R7a of resistance branch R7, the 8th resistance branch R8 R8a the projection of first surface rotate counterclockwise ω ° it is parallel with third direction, be denoted as the first resistor branch R1 first is each Anisotropy magnetoresistive sensor R1a, the first anisotropic magnetoresistive sensor R2a of second resistance branch R2,3rd resistor branch R3 The first anisotropic magnetoresistive sensor R3a, the 4th resistance branch R4 the first anisotropic magnetoresistive sensor R4a, described The first anisotropic magnetoresistive sensor R5a of five resistance branch R5, the first anisotropic magnetoresistive of the 6th resistance branch R6 sense The first anisotropy of device R6a, the first anisotropic magnetoresistive sensor R7a of the 7th resistance branch R7, the 8th resistance branch R8 The forward direction of magnetoresistive sensor R8a and third direction (X-direction) is at ω °, i.e., and+ω °；
The second anisotropic magnetoresistive sensor R1b of the first resistor branch R1, second resistance branch R2 it is second each The second anisotropic magnetoresistive sensor R3b, the 4th resistance branch R4 of anisotropy magnetoresistive sensor R2b, 3rd resistor branch R3 The second anisotropic magnetoresistive sensor R4b, the 5th resistance branch R5 the second anisotropic magnetoresistive sensor R5b, The second anisotropic magnetoresistive sensor R6b of six resistance branch R6, the second anisotropic magnetoresistive of the 7th resistance branch R7 sense Device R7b, the 8th resistance branch R8 the second anisotropic magnetoresistive sensor R8b rotate clockwise w ° in the projection of first surface It is parallel with third direction, it is denoted as the second anisotropic magnetoresistive sensor R1b, the second resistance branch of the first resistor branch R1 The second anisotropic magnetoresistive sensor R2b of road R2, the second anisotropic magnetoresistive sensor R3b of 3rd resistor branch R3, The second anisotropic magnetoresistive of the second anisotropic magnetoresistive sensor R4b of four resistance branch R4, the 5th resistance branch R5 Sensor R5b, the second anisotropic magnetoresistive sensor R6b of the 6th resistance branch R6, the 7th resistance branch R7 second respectively to The the second anisotropic magnetoresistive sensor R8b and third direction (X-direction) of Anisotropy Magnetoresistance sensor R7b, the 8th resistance branch R8 Negative sense at ω °, i.e. ,-ω °.
As shown in Figure 10, in another embodiment of the present invention, the second anisotropy of the first resistor branch R1 Magnetoresistive sensor R1b, the second anisotropic magnetoresistive sensor R2b of second resistance branch R2,3rd resistor branch R3 first Anisotropic magnetoresistive sensor R3a, the first anisotropic magnetoresistive sensor R4a of the 4th resistance branch R4, the 5th resistance The second anisotropic magnetoresistive sensor R5b of branch R5, the 6th resistance branch R6 the second anisotropic magnetoresistive sensor R6b, The first anisotropic magnetoresistive sensor R7a of 7th resistance branch R7, the first anisotropic magnetoresistive of the 8th resistance branch R8 pass Sensor R8a the projection of first surface rotate counterclockwise w ° it is parallel with third direction, be denoted as the of the first resistor branch R1 Two anisotropic magnetoresistive sensor R1b, the second anisotropic magnetoresistive sensor R2b of second resistance branch R2,3rd resistor branch The first anisotropic magnetoresistive sensor R3a, the first anisotropic magnetoresistive sensor R4a of the 4th resistance branch R4, institute of road R3 State the second anisotropic magnetoresistive sensor R5b of the 5th resistance branch R5, the second anisotropic magnetoresistive of the 6th resistance branch R6 Sensor R6b, the first anisotropic magnetoresistive sensor R7a of the 7th resistance branch R7, the 8th resistance branch R8 it is first each The forward direction of anisotropy magnetoresistive sensor R8a and third direction (X-direction) is at ω °, i.e., and+ω °；
The first anisotropic magnetoresistive sensor R1a of the first resistor branch R1, second resistance branch R2 it is first each The second anisotropic magnetoresistive sensor R3b, the 4th resistance branch R4 of anisotropy magnetoresistive sensor R2a, 3rd resistor branch R3 The second anisotropic magnetoresistive sensor R4b, the 5th resistance branch R5 the first anisotropic magnetoresistive sensor R5a, The first anisotropic magnetoresistive sensor R6a of six resistance branch R6, the second anisotropic magnetoresistive of the 7th resistance branch R7 sensing Device R7b, the 8th resistance branch R8 the second anisotropic magnetoresistive sensor R8b rotate clockwise w ° in the projection of first surface It is parallel with third direction, it is denoted as the first anisotropic magnetoresistive sensor R1a, the second resistance branch of the first resistor branch R1 The first anisotropic magnetoresistive sensor R2a of road R2, the second anisotropic magnetoresistive sensor R3b of 3rd resistor branch R3, The first anisotropic magnetoresistive of the second anisotropic magnetoresistive sensor R4b of four resistance branch R4, the 5th resistance branch R5 Sensor R5a, the first anisotropic magnetoresistive sensor R6a of the 6th resistance branch R6, the 7th resistance branch R7 second respectively to The the second anisotropic magnetoresistive sensor R8b and third direction (X-direction) of Anisotropy Magnetoresistance sensor R7b, the 8th resistance branch R8 Negative sense at ω °, i.e. ,-ω °.
As shown in figure 11, in yet another embodiment of the present invention, the second anisotropy of the first resistor branch R1 Magnetoresistive sensor R1b, the second anisotropic magnetoresistive sensor R2b of second resistance branch R2,3rd resistor branch R3 second Anisotropic magnetoresistive sensor R3b, the second anisotropic magnetoresistive sensor R4b of the 4th resistance branch R4, the 5th resistance The second anisotropic magnetoresistive sensor R5b of branch R5, the 6th resistance branch R6 the second anisotropic magnetoresistive sensor R6b, The second anisotropic magnetoresistive sensor R7b of 7th resistance branch R7, the second anisotropic magnetoresistive of the 8th resistance branch R8 pass Sensor R8b the projection of first surface rotate counterclockwise w ° it is parallel with third direction, be denoted as the of the first resistor branch R1 Two anisotropic magnetoresistive sensor R1b, the second anisotropic magnetoresistive sensor R2b of second resistance branch R2,3rd resistor branch The second anisotropic magnetoresistive sensor R3b, the second anisotropic magnetoresistive sensor R4b of the 4th resistance branch R4, institute of road R3 State the second anisotropic magnetoresistive sensor R5b of the 5th resistance branch R5, the second anisotropic magnetoresistive of the 6th resistance branch R6 Sensor R6b, the second anisotropic magnetoresistive sensor R7b of the 7th resistance branch R7, the 8th resistance branch R8 it is second each The forward direction of anisotropy magnetoresistive sensor R8b and third direction (X-direction) is at ω °, i.e., and+ω °；
The first anisotropic magnetoresistive sensor R1a of the first resistor branch R1, second resistance branch R2 it is first each The first anisotropic magnetoresistive sensor R3a, the 4th resistance branch R4 of anisotropy magnetoresistive sensor R2a, 3rd resistor branch R3 The first anisotropic magnetoresistive sensor R4a, the 5th resistance branch R5 the first anisotropic magnetoresistive sensor R5a, The first anisotropic magnetoresistive sensor R6a of six resistance branch R6, the first anisotropic magnetoresistive of the 7th resistance branch R7 sense Device R7a, the 8th resistance branch R8 the first anisotropic magnetoresistive sensor R8a rotate clockwise w ° in the projection of first surface It is parallel with third direction, it is denoted as the first anisotropic magnetoresistive sensor R1a, the second resistance branch of the first resistor branch R1 The first anisotropic magnetoresistive sensor R2a of road R2, the first anisotropic magnetoresistive sensor R3a of 3rd resistor branch R3, The first anisotropic magnetoresistive of the first anisotropic magnetoresistive sensor R4a of four resistance branch R4, the 5th resistance branch R5 Sensor R5a, the first anisotropic magnetoresistive sensor R6a of the 6th resistance branch R6, the 7th resistance branch R7 first respectively to The the first anisotropic magnetoresistive sensor R8a and third direction (X-direction) of Anisotropy Magnetoresistance sensor R7a, the 8th resistance branch R8 Negative sense at ω °, i.e. ,-ω °.
As shown in figure 12, in yet another embodiment of the present invention, the first anisotropy of the first resistor branch R1 Magnetoresistive sensor R1a, the first anisotropic magnetoresistive sensor R2a of second resistance branch R2, the 5th resistance branch R5 First anisotropic magnetoresistive sensor R5a, the first anisotropic magnetoresistive sensor R6a of the 6th resistance branch R6,3rd resistor The second anisotropic magnetoresistive sensor R3b of branch R3, the 4th resistance branch R4 the second anisotropic magnetoresistive sensor R4b, The second anisotropic magnetoresistive sensor R7b of 7th resistance branch R7, the second anisotropic magnetoresistive of the 8th resistance branch R8 pass Sensor R8b the projection of first surface rotate counterclockwise w ° it is parallel with third direction, be denoted as the of the first resistor branch R1 One anisotropic magnetoresistive sensor R1a, the first anisotropic magnetoresistive sensor R2a of second resistance branch R2, the 5th electricity Hinder the first anisotropic magnetoresistive sensor R5a of branch R5, the first anisotropic magnetoresistive sensor of the 6th resistance branch R6 The second anisotropic magnetic of R6a, the second anisotropic magnetoresistive sensor R3b of 3rd resistor branch R3, the 4th resistance branch R4 Hinder sensor R4b, the second anisotropic magnetoresistive sensor R7b of the 7th resistance branch R7, the 8th resistance branch R8 it is second each The forward direction of anisotropy magnetoresistive sensor R8b and third direction (X-direction) is at ω °, i.e., and+ω °；
The second anisotropic magnetoresistive sensor R1b of the first resistor branch R1, second resistance branch R2 it is second each The first anisotropic magnetoresistive sensor R3a, the 4th resistance branch R4 of anisotropy magnetoresistive sensor R2b, 3rd resistor branch R3 The first anisotropic magnetoresistive sensor R4a, the 5th resistance branch R5 the second anisotropic magnetoresistive sensor R5b, The second anisotropic magnetoresistive sensor R6b of six resistance branch R6, the first anisotropic magnetoresistive of the 7th resistance branch R7 sense Device R7a, the 8th resistance branch R8 the first anisotropic magnetoresistive sensor R8a rotate clockwise w ° in the projection of first surface It is parallel with third direction, it is denoted as the second anisotropic magnetoresistive sensor R1b, the second resistance branch of the first resistor branch R1 The second anisotropic magnetoresistive sensor R2b of road R2, the first anisotropic magnetoresistive sensor R3a of 3rd resistor branch R3, The second anisotropic magnetoresistive of the first anisotropic magnetoresistive sensor R4a of four resistance branch R4, the 5th resistance branch R5 Sensor R5b, the second anisotropic magnetoresistive sensor R6b of the 6th resistance branch R6, the 7th resistance branch R7 first respectively to The the first anisotropic magnetoresistive sensor R8a and third direction (X-direction) of Anisotropy Magnetoresistance sensor R7a, the 8th resistance branch R8 Negative sense at ω °, i.e. ,-ω °；
Year in another embodiment of the present invention, the basal plane that each convex block is contacted with the substrate in the multiple convex block are It is trapezoidal.
As shown in figure 13, in one embodiment of the invention, the first anisotropic magnetic of the first resistor branch R1 Hinder sensor R1a, the first anisotropic magnetoresistive sensor R2a of second resistance branch R2,3rd resistor branch R3 it is first each Anisotropy magnetoresistive sensor R3a, the first anisotropic magnetoresistive sensor R4a of the 4th resistance branch R4, the 5th resistance branch The second anisotropic magnetoresistive sensor R5b of road R5, the second anisotropic magnetoresistive sensor R6b of the 6th resistance branch R6, The second anisotropic magnetoresistive sensor R7b of seven resistance branch R7, the second anisotropic magnetoresistive of the 8th resistance branch R8 sense Device R8b the projection of first surface rotate counterclockwise w ° it is parallel with third direction, be denoted as the first of the first resistor branch R1 The first anisotropic magnetoresistive sensor R2a, the 3rd resistor branch of anisotropic magnetoresistive sensor R1a, second resistance branch R2 The first anisotropic magnetoresistive sensor R4a, described of the first anisotropic magnetoresistive sensor R3a of R3, the 4th resistance branch R4 The second anisotropic magnetoresistive sensor R5b of 5th resistance branch R5, the second anisotropic magnetoresistive of the 6th resistance branch R6 pass Sensor R6b, the second anisotropic magnetoresistive sensor R7b of the 7th resistance branch R7, the 8th resistance branch R8 second respectively to different Property magnetoresistive sensor R8b and third direction (X-direction) forward direction at ω °, i.e. ,+ω °；
The second anisotropic magnetoresistive sensor R1b of the first resistor branch R1, second resistance branch R2 it is second each The second anisotropic magnetoresistive sensor R3b, the 4th resistance branch R4 of anisotropy magnetoresistive sensor R2b, 3rd resistor branch R3 The second anisotropic magnetoresistive sensor R4b, the 5th resistance branch R5 the first anisotropic magnetoresistive sensor R5a, The first anisotropic magnetoresistive sensor R6a of six resistance branch R6, the first anisotropic magnetoresistive of the 7th resistance branch R7 sense Device R7a, the 8th resistance branch R8 the first anisotropic magnetoresistive sensor R8a rotate clockwise w ° in the projection of first surface It is parallel with third direction, it is denoted as the second anisotropic magnetoresistive sensor R1b, the second resistance branch of the first resistor branch R1 The second anisotropic magnetoresistive sensor R2b of road R2, the second anisotropic magnetoresistive sensor R3b of 3rd resistor branch R3, The first anisotropic magnetoresistive of the second anisotropic magnetoresistive sensor R4b of four resistance branch R4, the 5th resistance branch R5 Sensor R5a, the first anisotropic magnetoresistive sensor R6a of the 6th resistance branch R6, the 7th resistance branch R7 first respectively to The the first anisotropic magnetoresistive sensor R8a and third direction (X-direction) of Anisotropy Magnetoresistance sensor R7a, the 8th resistance branch R8 Negative sense at ω °, i.e. ,-ω °.
As shown in figure 14, in another embodiment of the present invention, the first anisotropy of the first resistor branch R1 Magnetoresistive sensor R1a, the first anisotropic magnetoresistive sensor R2a of second resistance branch R2,3rd resistor branch R3 second Anisotropic magnetoresistive sensor R3b, the second anisotropic magnetoresistive sensor R4b of the 4th resistance branch R4, the 5th resistance The second anisotropic magnetoresistive sensor R5b of branch R5, the 6th resistance branch R6 the second anisotropic magnetoresistive sensor R6b, The first anisotropic magnetoresistive sensor R7a of 7th resistance branch R7, the first anisotropic magnetoresistive of the 8th resistance branch R8 pass Sensor R8a the projection of first surface rotate counterclockwise w ° it is parallel with third direction, be denoted as the of the first resistor branch R1 One anisotropic magnetoresistive sensor R1a, the first anisotropic magnetoresistive sensor R2a of second resistance branch R2,3rd resistor branch The second anisotropic magnetoresistive sensor R3b, the second anisotropic magnetoresistive sensor R4b of the 4th resistance branch R4, institute of road R3 State the second anisotropic magnetoresistive sensor R5b of the 5th resistance branch R5, the second anisotropic magnetoresistive of the 6th resistance branch R6 Sensor R6b, the first anisotropic magnetoresistive sensor R7a of the 7th resistance branch R7, the 8th resistance branch R8 it is first each The forward direction of anisotropy magnetoresistive sensor R8a and third direction (X-direction) is at ω °, i.e., and+ω °；
The second anisotropic magnetoresistive sensor R1b of the first resistor branch R1, second resistance branch R2 it is second each The first anisotropic magnetoresistive sensor R3a, the 4th resistance branch R4 of anisotropy magnetoresistive sensor R2b, 3rd resistor branch R3 The first anisotropic magnetoresistive sensor R4a, the 5th resistance branch R5 the first anisotropic magnetoresistive sensor R5a, The first anisotropic magnetoresistive sensor R6a of six resistance branch R6, the second anisotropic magnetoresistive of the 7th resistance branch R7 sense Device R7b, the 8th resistance branch R8 the projection of first surface rotate clockwise w ° it is parallel with third direction, be denoted as it is described first electricity Hinder the second anisotropic magnetoresistive sensor R1b of branch R1, the second anisotropic magnetoresistive sensor of second resistance branch R2 The first anisotropic magnetic of R2b, the first anisotropic magnetoresistive sensor R3a of 3rd resistor branch R3, the 4th resistance branch R4 Hinder sensor R4a, the first anisotropic magnetoresistive sensor R5a of the 5th resistance branch R5, the 6th resistance branch R6 the One anisotropic magnetoresistive sensor R6a, the second anisotropic magnetoresistive sensor R7b, the 8th resistance of the 7th resistance branch R7 The second anisotropic magnetoresistive sensor R8b of branch R8 and the negative sense of third direction (X-direction) are at ω °, i.e., and-ω °.
As shown in figure 15, in yet another embodiment of the present invention, the second anisotropy of the first resistor branch R1 Magnetoresistive sensor R1b, the second anisotropic magnetoresistive sensor R2b of second resistance branch R2, the 5th resistance branch R5 First anisotropic magnetoresistive sensor R5a, the first anisotropic magnetoresistive sensor R6a of the 6th resistance branch R6,3rd resistor The first anisotropic magnetoresistive sensor R3a of branch R3, the 4th resistance branch R4 the first anisotropic magnetoresistive sensor R4a, The second anisotropic magnetoresistive sensor R7b of 7th resistance branch R7, the second anisotropic magnetoresistive of the 8th resistance branch R8 pass Sensor R8b the projection of first surface rotate counterclockwise w ° it is parallel with third direction, be denoted as the of the first resistor branch R1 Two anisotropic magnetoresistive sensor R1b, the second anisotropic magnetoresistive sensor R2b of second resistance branch R2, the 5th electricity Hinder the first anisotropic magnetoresistive sensor R5a of branch R5, the first anisotropic magnetoresistive sensor of the 6th resistance branch R6 The first anisotropic magnetic of R6a, the first anisotropic magnetoresistive sensor R3a of 3rd resistor branch R3, the 4th resistance branch R4 Hinder sensor R4a, the second anisotropic magnetoresistive sensor R7b of the 7th resistance branch R7, the 8th resistance branch R8 it is second each The forward direction of anisotropy magnetoresistive sensor R8b and third direction (X-direction) is at ω °, i.e., and+ω °；
The first anisotropic magnetoresistive sensor R1a of the first resistor branch R1, second resistance branch R2 it is first each The second anisotropic magnetoresistive sensor R3b, the 4th resistance branch R4 of anisotropy magnetoresistive sensor R2a, 3rd resistor branch R3 The second anisotropic magnetoresistive sensor R4b, the 5th resistance branch R5 the second anisotropic magnetoresistive sensor R5b, The second anisotropic magnetoresistive sensor R6b of six resistance branch R6, the first anisotropic magnetoresistive of the 7th resistance branch R7 sense Device R7a, the 8th resistance branch R8 are parallel with third direction along w ° of pointer rotation in the projection of first surface, are denoted as first electricity Hinder the first anisotropic magnetoresistive sensor R1a of branch R1, the first anisotropic magnetoresistive sensor of second resistance branch R2 The second anisotropic magnetic of R2a, the second anisotropic magnetoresistive sensor R3b of 3rd resistor branch R3, the 4th resistance branch R4 Hinder sensor R4b, the second anisotropic magnetoresistive sensor R5b of the 5th resistance branch R5, the 6th resistance branch R6 the Two anisotropic magnetoresistive sensor R6b, the first anisotropic magnetoresistive sensor R7a of the 7th resistance branch R7, the 8th resistance branch The first anisotropic magnetoresistive sensor R8a of road R8 and the negative sense of third direction (X-direction) are at ω °, i.e., and-ω °.
As shown in figure 16, in yet another embodiment of the present invention, the second anisotropy of the first resistor branch R1 Magnetoresistive sensor R1b, the second anisotropic magnetoresistive sensor R2b of second resistance branch R2,3rd resistor branch R3 second Anisotropic magnetoresistive sensor R3b, the second anisotropic magnetoresistive sensor R4b of the 4th resistance branch R4, the 5th resistance The first anisotropic magnetoresistive sensor R5a of branch R5, the 6th resistance branch R6 the first anisotropic magnetoresistive sensor R6a, The first anisotropic magnetoresistive sensor R7a of 7th resistance branch R7, the first anisotropic magnetoresistive of the 8th resistance branch R8 pass Sensor R8a the projection of first surface rotate counterclockwise w ° it is parallel with third direction, be denoted as the of the first resistor branch R1 Two anisotropic magnetoresistive sensor R1b, the second anisotropic magnetoresistive sensor R2b of second resistance branch R2,3rd resistor branch The second anisotropic magnetoresistive sensor R3b, the second anisotropic magnetoresistive sensor R4b of the 4th resistance branch R4, institute of road R3 State the first anisotropic magnetoresistive sensor R5a of the 5th resistance branch R5, the first anisotropic magnetoresistive of the 6th resistance branch R6 Sensor R6a, the first anisotropic magnetoresistive sensor R7a of the 7th resistance branch R7, the 8th resistance branch R8 it is first each The forward direction of anisotropy magnetoresistive sensor R8a and third direction (X-direction) is at ω °, i.e., and+ω °；
The first anisotropic magnetoresistive sensor R1a of the first resistor branch R1, second resistance branch R2 it is first each The first anisotropic magnetoresistive sensor R3a, the 4th resistance branch R4 of anisotropy magnetoresistive sensor R2a, 3rd resistor branch R3 The first anisotropic magnetoresistive sensor R4a, the 5th resistance branch R5 the second anisotropic magnetoresistive sensor R5b, The second anisotropic magnetoresistive sensor R6b of six resistance branch R6, the second anisotropic magnetoresistive of the 7th resistance branch R7 sense Device R7b, the 8th resistance branch R8 the second anisotropic magnetoresistive sensor R8b rotate clockwise w ° in the projection of first surface It is parallel with third direction, it is denoted as the first anisotropic magnetoresistive sensor R1a, the second resistance branch of the first resistor branch R1 The first anisotropic magnetoresistive sensor R2a of road R2, the first anisotropic magnetoresistive sensor R3a of 3rd resistor branch R3, The second anisotropic magnetoresistive of the first anisotropic magnetoresistive sensor R4a of four resistance branch R4, the 5th resistance branch R5 Sensor R5b, the second anisotropic magnetoresistive sensor R6b of the 6th resistance branch R6, the 7th resistance branch R7 second respectively to The the second anisotropic magnetoresistive sensor R8b and third direction (X-direction) of Anisotropy Magnetoresistance sensor R7b, the 8th resistance branch R8 Negative sense at ω °, i.e. ,-ω °.
In conclusion in magnetoresistive sensor provided by the embodiment of the present invention, first wheatstone bridge circuits and Two wheatstone bridge circuits can measure the magnetic flux on first direction and second direction, and the third wheatstone bridge circuits can be with The magnetic flux on third direction is measured, is hung down so that magnetoresistive sensor provided by the embodiment of the present invention can not only measure detection Directly in the magnetic flux of base plan, the magnetic flux for being parallel to base plan can also be detected, to expand anisotropic magnetoresistive sensing The use scope of device.
Various pieces are described in a progressive manner in this specification, and what each some importance illustrated is and other parts Difference, same and similar part may refer to each other between various pieces.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention It is not intended to be limited to embodiment illustrated herein, and is to fit to consistent with the principles and novel features disclosed in this article Widest scope.

Claims (14)

1. a kind of magnetoresistive sensor characterized by comprising
Substrate；
Multiple convex blocks, the convex block are located at the substrate first surface, including opposite the first inclined surface and the second nauropemeter Face has the first interior angle, second inclined surface and described first between first inclined surface and the first surface There is the second interior angle, first interior angle is identical with the second interior angle size between surface；
First wheatstone bridge circuits, first wheatstone bridge circuits include four the first bridge arms, each described first Bridge arm includes the first anisotropic magnetoresistive sensor and the second anisotropic magnetoresistive sensor, first anisotropic magnetoresistive Sensor and the second anisotropic magnetoresistive sensor are set on first inclined surface；
Second wheatstone bridge circuits, second wheatstone bridge circuits include four the second bridge arms, each described second Bridge arm includes third anisotropic magnetoresistive sensor and the 4th anisotropic magnetoresistive sensor, the third anisotropic magnetoresistive Sensor and the 4th anisotropic magnetoresistive sensor are arranged on second inclined surface；
Third wheatstone bridge circuits, the third wheatstone bridge circuits include multiple being arranged in the 5th of the first surface Anisotropic magnetoresistive sensor；
Wherein, first wheatstone bridge circuits and the second wheatstone bridge circuits are for measuring first direction and second direction On magnetic field, the third wheatstone bridge circuits are used to measure magnetic field on third direction, the first direction, described second Direction and the third direction are vertical two-by-two；The projection edge of first anisotropic magnetoresistive sensor on the first surface Fourth direction rotation third angle is parallel with the third direction, and second anisotropic magnetoresistive sensor is on the first surface Projection along the 5th direction to rotate third angle parallel with the third direction, the fourth direction be clockwise, it is described 5th direction is counterclockwise or the fourth direction is that counterclockwise, the 5th direction is clockwise；
The projection of the third anisotropic magnetoresistive sensor on the first surface along the 6th direction rotate fourth angle with The third direction is parallel, and the projection of the 4th anisotropic magnetoresistive sensor on the first surface is revolved along the 7th direction It is parallel with the third direction to turn fourth angle, the 6th direction is that clockwise, the 7th direction is square counterclockwise To or the 6th direction be counterclockwise, the 7th direction be clockwise, the third angle and the described 4th Angle is all larger than 0 °.
2. magnetoresistive sensor according to claim 1, which is characterized in that the third angle is less than or equal to 45 °；It is described Fourth angle is less than or equal to 45 °.
3. magnetoresistive sensor according to claim 2, which is characterized in that the third angle and fourth angle are w °, w Value range be 0 ° -45 °, including endpoint value.
4. magnetoresistive sensor according to claim 3, which is characterized in that first Wheatstone bridge includes: the first electricity Hinder branch, four second resistance branch, 3rd resistor branch and the 4th resistance branch resistance branch；
Second Wheatstone bridge includes: the 5th resistance branch, the 6th resistance branch, the 7th resistance branch and the 8th resistance branch Four, road resistance branch.
5. magnetoresistive sensor according to claim 4, which is characterized in that the convex block is in contact with the first surface Basal plane is rectangle.
6. magnetoresistive sensor according to claim 5, which is characterized in that the first anisotropy of the first resistor branch Magnetoresistive sensor, the first anisotropic magnetoresistive sensor of second resistance branch, the first anisotropic magnetoresistive of 3rd resistor branch First anisotropic magnetic of sensor, the first anisotropic magnetoresistive sensor of the 4th resistance branch, the 5th resistance branch Hinder the first anisotropic magnetoresistive of sensor, the first anisotropic magnetoresistive sensor of the 6th resistance branch, the 7th resistance branch The first anisotropic magnetoresistive sensor projection on the first surface of sensor, the 8th resistance branch rotates counterclockwise ω ° parallel with the third direction；
Second anisotropic magnetoresistive sensor of the first resistor branch, the second anisotropic magnetoresistive of second resistance branch pass Sensor, the second anisotropic magnetoresistive sensor of 3rd resistor branch, the second anisotropic magnetoresistive sensing of the 4th resistance branch Device, the second anisotropic magnetoresistive sensor of the 5th resistance branch, the second anisotropic magnetoresistive biography of the 6th resistance branch Sensor, the second anisotropic magnetoresistive sensor of the 7th resistance branch, the second anisotropic magnetoresistive sensing of the 8th resistance branch The projection of device on the first surface be rotated in a clockwise direction ω ° it is parallel with third direction.
7. magnetoresistive sensor according to claim 5, which is characterized in that the second anisotropy of the first resistor branch Magnetoresistive sensor, the second anisotropic magnetoresistive sensor of second resistance branch, 3rd resistor branch the first anisotropic magnetic Hinder sensor, the first anisotropic magnetoresistive sensor of the 4th resistance branch, the second anisotropy of the 5th resistance branch First anisotropic magnetic of magnetoresistive sensor, the second anisotropic magnetoresistive sensor of the 6th resistance branch, the 7th resistance branch Hinder sensor, the 8th resistance branch the projection on the first surface of the first anisotropic magnetoresistive sensor counterclockwise ω ° of rotation is parallel with the third direction；
First anisotropic magnetoresistive sensor of the first resistor branch, the first anisotropic magnetoresistive of second resistance branch pass Sensor, the second anisotropic magnetoresistive sensor of 3rd resistor branch, the second anisotropic magnetoresistive sensing of the 4th resistance branch Device, the first anisotropic magnetoresistive sensor of the 5th resistance branch, the first anisotropic magnetoresistive biography of the 6th resistance branch Sensor, the second anisotropic magnetoresistive sensor of the 7th resistance branch, the second anisotropic magnetoresistive sensing of the 8th resistance branch The projection of device on the first surface rotate clockwise ω ° it is parallel with the third direction.
8. magnetoresistive sensor according to claim 5, which is characterized in that the second anisotropy of the first resistor branch Magnetoresistive sensor, the second anisotropic magnetoresistive sensor of second resistance branch, 3rd resistor branch the second anisotropic magnetic Hinder sensor, the second anisotropic magnetoresistive sensor of the 4th resistance branch, the second anisotropy of the 5th resistance branch Second anisotropic magnetic of magnetoresistive sensor, the second anisotropic magnetoresistive sensor of the 6th resistance branch, the 7th resistance branch The second anisotropic magnetoresistive sensor projection on the first surface of resistance sensor, the 8th resistance branch rotates counterclockwise ω ° parallel with the third direction；
First anisotropic magnetoresistive sensor of the first resistor branch, the first anisotropic magnetoresistive of second resistance branch pass Sensor, the first anisotropic magnetoresistive sensor of 3rd resistor branch, the first anisotropic magnetoresistive sensing of the 4th resistance branch Device, the first anisotropic magnetoresistive sensor of the 5th resistance branch, the first anisotropic magnetoresistive biography of the 6th resistance branch Sensor, the first anisotropic magnetoresistive sensor of the 7th resistance branch, the first anisotropic magnetoresistive sensing of the 8th resistance branch The projection of device on the first surface rotate clockwise ω ° it is parallel with the third direction.
9. magnetoresistive sensor according to claim 5, which is characterized in that the first anisotropy of the first resistor branch Magnetoresistive sensor, the first anisotropic magnetoresistive sensor of second resistance branch, the 5th resistance branch first respectively to different Property magnetoresistive sensor, the first anisotropic magnetoresistive sensor of the 6th resistance branch, the second anisotropy of 3rd resistor branch Second anisotropic magnetic of magnetoresistive sensor, the second anisotropic magnetoresistive sensor of the 4th resistance branch, the 7th resistance branch The second anisotropic magnetoresistive sensor projection on the first surface of resistance sensor, the 8th resistance branch rotates counterclockwise ω ° parallel with the third direction；
Second anisotropic magnetoresistive sensor of the first resistor branch, the second anisotropic magnetoresistive of second resistance branch pass Sensor, the first anisotropic magnetoresistive sensor of 3rd resistor branch, the first anisotropic magnetoresistive sensing of the 4th resistance branch Device, the second anisotropic magnetoresistive sensor of the 5th resistance branch, the second anisotropic magnetoresistive biography of the 6th resistance branch Sensor, the first anisotropic magnetoresistive sensor of the 7th resistance branch, the first anisotropic magnetoresistive sensing of the 8th resistance branch The projection of device on the first surface rotate clockwise ω ° it is parallel with the third direction.
10. magnetoresistive sensor according to claim 4, which is characterized in that the convex block is in contact with the first surface Basal plane be it is trapezoidal.
11. magnetoresistive sensor according to claim 10, which is characterized in that the first of the first resistor branch is respectively to different Property magnetoresistive sensor, the first anisotropic magnetoresistive sensor of second resistance branch, the first anisotropy of 3rd resistor branch Magnetoresistive sensor, the first anisotropic magnetoresistive sensor of the 4th resistance branch, the 5th resistance branch second respectively to different Property magnetoresistive sensor, the second anisotropic magnetoresistive sensor of the 6th resistance branch, the second anisotropy of the 7th resistance branch The second anisotropic magnetoresistive sensor projection on the first surface of magnetoresistive sensor, the 8th resistance branch is revolved counterclockwise Turn ω ° it is parallel with the third direction；
Second anisotropic magnetoresistive sensor of the first resistor branch, the second anisotropic magnetoresistive of second resistance branch pass Sensor, the second anisotropic magnetoresistive sensor of 3rd resistor branch, the second anisotropic magnetoresistive sensing of the 4th resistance branch Device, the first anisotropic magnetoresistive sensor of the 5th resistance branch, the first anisotropic magnetoresistive biography of the 6th resistance branch Sensor, the first anisotropic magnetoresistive sensor of the 7th resistance branch, the first anisotropic magnetoresistive sensing of the 8th resistance branch The projection of device on the first surface rotate clockwise ω ° it is parallel with the third direction.
12. magnetoresistive sensor according to claim 10, which is characterized in that the first of the first resistor branch is respectively to different Property magnetoresistive sensor, the first anisotropic magnetoresistive sensor of second resistance branch, the second anisotropy of 3rd resistor branch Magnetoresistive sensor, the second anisotropic magnetoresistive sensor of the 4th resistance branch, the 5th resistance branch second respectively to different Property magnetoresistive sensor, the second anisotropic magnetoresistive sensor of the 6th resistance branch, the first anisotropy of the 7th resistance branch The first anisotropic magnetoresistive sensor projection on the first surface of magnetoresistive sensor, the 8th resistance branch is revolved counterclockwise Turn ω ° it is parallel with the third direction；
Second anisotropic magnetoresistive sensor of the first resistor branch, the second anisotropic magnetoresistive of second resistance branch pass Sensor, the first anisotropic magnetoresistive sensor of 3rd resistor branch, the first anisotropic magnetoresistive sensing of the 4th resistance branch Device, the first anisotropic magnetoresistive sensor of the 5th resistance branch, the first anisotropic magnetoresistive biography of the 6th resistance branch Sensor, the second anisotropic magnetoresistive sensor of the 7th resistance branch, the second anisotropic magnetoresistive sensing of the 8th resistance branch The projection of device on the first surface rotate clockwise ω ° it is parallel with the third direction.
13. magnetoresistive sensor according to claim 10, which is characterized in that the second of the first resistor branch is respectively to different Property magnetoresistive sensor, the second anisotropic magnetoresistive sensor of second resistance branch, the 5th resistance branch first respectively to Anisotropy Magnetoresistance sensor, the first anisotropic magnetoresistive sensor of the 6th resistance branch, 3rd resistor branch first respectively to different Property magnetoresistive sensor, the first anisotropic magnetoresistive sensor of the 4th resistance branch, the second anisotropy of the 7th resistance branch The second anisotropic magnetoresistive sensor projection on the first surface of magnetoresistive sensor, the 8th resistance branch is revolved counterclockwise Turn ω ° it is parallel with the third direction；
First anisotropic magnetoresistive sensor of the first resistor branch, the first anisotropic magnetoresistive of second resistance branch pass Sensor, the second anisotropic magnetoresistive sensor of 3rd resistor branch, the second anisotropic magnetoresistive sensing of the 4th resistance branch Device, the second anisotropic magnetoresistive sensor of the 5th resistance branch, the second anisotropic magnetoresistive biography of the 6th resistance branch Sensor, the first anisotropic magnetoresistive sensor of the 7th resistance branch, the first anisotropic magnetoresistive sensing of the 8th resistance branch The projection of device on the first surface rotate clockwise ω ° it is parallel with the third direction.
14. magnetoresistive sensor according to claim 10, which is characterized in that the second of the first resistor branch is respectively to different Property magnetoresistive sensor, the second anisotropic magnetoresistive sensor of second resistance branch, the second anisotropy of 3rd resistor branch Magnetoresistive sensor, the second anisotropic magnetoresistive sensor of the 4th resistance branch, the 5th resistance branch first respectively to different Property magnetoresistive sensor, the first anisotropic magnetoresistive sensor of the 6th resistance branch, the first anisotropy of the 7th resistance branch The first anisotropic magnetoresistive sensor projection on the first surface of magnetoresistive sensor, the 8th resistance branch is revolved counterclockwise Turn ω ° it is parallel with the third direction；
First anisotropic magnetoresistive sensor of the first resistor branch, the first anisotropic magnetoresistive of second resistance branch pass Sensor, the first anisotropic magnetoresistive sensor of 3rd resistor branch, the first anisotropic magnetoresistive sensing of the 4th resistance branch Device, the second anisotropic magnetoresistive sensor of the 5th resistance branch, the second anisotropic magnetoresistive biography of the 6th resistance branch Sensor, the second anisotropic magnetoresistive sensor of the 7th resistance branch, the second anisotropic magnetoresistive sensing of the 8th resistance branch The projection of device on the first surface rotate clockwise ω ° it is parallel with the third direction.
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