CN109752675A - A kind of octagon thin-film magnetoresistive sensor - Google Patents
A kind of octagon thin-film magnetoresistive sensor Download PDFInfo
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- CN109752675A CN109752675A CN201910022159.6A CN201910022159A CN109752675A CN 109752675 A CN109752675 A CN 109752675A CN 201910022159 A CN201910022159 A CN 201910022159A CN 109752675 A CN109752675 A CN 109752675A
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Abstract
The invention discloses a kind of octagon thin-film magnetoresistive sensors.The magnetic field sensor includes the substrate (1) for being sequentially overlapped setting from bottom to top, insulating layer (2), anisotropic magnetic resistance layer (3) and top electrode (4)；Wherein, anisotropic magnetic resistance layer (3) is rearranged by eight duplicate anisotropic magnetoresistive film tape A, B, C, D, E, F, G, I octagons in the way of being linked in sequence end to end, and the phase of adjacent membranes item difference is 135 °.Externally-applied magnetic fieldIt is parallel with thin film planar, it is θ with film C current direction angle.The octagon thin-film magnetoresistive sensor operating current is low, and output voltage is high, and measurement result is more accurate.
Description
Technical field
The invention belongs to magnetic sensor technologies fields, it particularly relates to a kind of for measuring positive eight side of magnetic direction
Shape thin-film magnetoresistive sensor.
Background technique
One important foundation of information technology rapid development is exactly being constantly progressive for sensor technology, and magnetic field is raw as the mankind
Closely bound up physical quantity living, people especially pay close attention to its detection and application.One important point as magnetoelectric effect
Branch --- magnetoresistance is exactly the research hotspot in this field, and generation by generation scientist makes great efforts that anisotropic magnetoresistive is pushed to imitate
It answers, a series of research of magnetoelectric effects such as giant magnetoresistance effect, tunnel magneto-resistance effect, pushes and guide Information Technology Development, and
The research of the anisotropic magneto-resistive effect exactly witness and leader during this.
Under high sensitivity, high-resolution, the good linearity and the trend of micromation, anisotropic magnetoresistive sensor
Gradually cause the concern of researcher.ARM thin-film magnetoresistive sensor comes across world's the mid-1970s.It has sensitivity
The advantages that high, small in size, adverse environment resistant ability is strong and easily match with digital circuit, so that it rapidly develops and in magnetic biography
Occupy very big specific gravity in sensor, application field is also constantly expanding.It is wide using the magnetoresistive sensor that ARM magnetoresistance makes
A kind of Magnetic Sensor of general application, but ARM magnetic sensor arrangement currently on the market is single, fuel factor is big, and sensitivity is not high,
A kind of novel fabrication of magnetoresistance sensor structure is developed, and realizes reduction fuel factor, improving sensitivity is current hot spot.Therefore, it grinds
The fabrication of magnetoresistance sensor structure for studying carefully a kind of novel highly sensitive high stability is our target.
The present invention is exactly the thin-film magnetoresistive sensor for devising a kind of low thermal effect, highly sensitive octagon.
Summary of the invention
Technical problem: the technical problems to be solved by the present invention are: a kind of octagon thin-film magnetoresistive sensor is provided, it should
Octagon thin-film magnetoresistive sensor operating current is low, and under fuel factor, output voltage is high, and measurement result is more accurate.
Technical solution: in order to solve the above technical problems, what a kind of octagon thin-film magnetoresistive sensor of the invention used
Technical solution is:
The magnetic field sensor includes the substrate for being sequentially overlapped setting from bottom to top, insulating layer, anisotropic magnetic resistance layer and top
Layer electrode layer；Wherein, anisotropic magnetic resistance layer is by eight duplicate anisotropic magnetoresistive film tape A, B, C, D, E, F, G, I
Octagon rearranges in the way of being linked in sequence end to end, and the phase of adjacent membranes item difference is 135 °.
What the identical magnetoresistive film item of eight anisotropic magneto-resistive effects of the anisotropic magnetic resistance layer 3 was selected is
Iron-nickel alloy with anisotropic magneto-resistive effect.
The content of iron is 20% in the iron-nickel alloy.
The flat shape of described eight duplicate anisotropic magnetoresistive film tape A, B, C, D, E, F, G, I are continuously to connect
The S-shaped connect.
The material that the substrate 1 uses is Si.
The insulating layer is using SiO2, have non magnetic, good insulating properties, stable chemical property, intensity hard
It is good to spend high stretch.
Material used in top electrode is copper.
Its equivalent circuit is as shown in Figure 3.Wherein a, b, c, d are the electrodes that copper conductive material is fabricated to.Externally-applied magnetic fieldWith it is thin
Membrane plane is parallel, is θ with film C current direction angle.Magnetic direction changes, and voltage can also change between b, d, pass through survey
Voltage between b, d is measured, the angle in magnetic field can be finally converted to.
The utility model has the advantages that octagon thin-film magnetoresistive sensor structure novel, the function for being used to measure magnetic direction of the invention
Consume it is small, implement it is convenient.Using octagon structure, so that internal resistance becomes larger, identical voltage, current is small, and fuel factor is small, and
With temperature-compensating benefit, working sensor is more stable.The structure can also make measurement sensitiveer, can measure small magnetic
Field angle change.
Detailed description of the invention
Fig. 1 is front view of the invention.
Fig. 2 is top view of the invention.
Fig. 3 is equivalent circuit diagram of the invention.
Have in figure: substrate 1, insulating layer 2, anisotropic magnetic resistance layer 3, top electrode 4, anisotropic magnetoresistive film A, B,
C, D, E, F, G, I, copper electrode a, b, c, d and magnetic field H.
Specific embodiment
Below with reference to Figure of abstract, technical solution of the present invention is described in detail.
As shown in Figure 1 to Figure 3, a kind of octagon thin-film magnetoresistive sensor of the invention.Including successively folding from top to bottom
Substrate 1, oxide layer 2, anisotropic magnetic resistance layer 3 and the top electrode 4 added.Wherein substrate 1 is Si, and insulating layer 2 is SiO2, respectively
Anisotropy magneto-resistive layer 3 is anisotropic magnetoresistive film NiFe, and top layer electrode 4 is Cu electrode.Anisotropic magnetic resistance layer is complete by eight
Complete the same anisotropic magnetoresistive film tape A, B, C, D, E, F, G, I is formed by connecting according to two mode of attached drawing, adjacent membranes item difference
Phase be 135 °.That is, substrate and matrix are all frame-type, metal layer is that shape after photoetching is carried out according to certain figure
At figure as shown in Figure 2.Electrode is one layer of copper metal layer to be formed by sputtering technology, and graphically by it, carry out photoetching,
Finally obtain four required electrodes.
As shown in Fig. 2, including tetra- complete phases of eight identical anisotropic magnetoresistive film tapes and a, b, c, d
The same electrode section being made of copper.When externally-applied magnetic field is not added, the resistance of eight magnetoresistive film items is R, corresponding resistance at this time
Rate is known as ρ0.Externally-applied magnetic fieldIt is parallel with thin film planar, it is θ with magnetoresistive film C current direction angle.The electricity of magnetoresistive film C
Resistance rate are as follows:
According to the positional relationship of magnetoresistive film D and magnetoresistive film C, the resistivity of available magnetoresistive film D are as follows:
Since magnetoresistive film A and C are vertical, magnetoresistive film B and D is vertical, it is to be understood that when A resistance increases △ R1, the electricity of C
Resistance will accordingly reduce △ R1.If magnetoresistive film D increases △ R2 at this time, magnetoresistive film B will accordingly reduce △ R2.Magnetic resistance
After film tape A, B, C, D constitute series circuit, in same magnetic fieldUnder effect, when the direction in magnetic field changes, between b, c
Voltage U+(θ) can be indicated are as follows:
Voltage U as symmetrical structure (as shown in attached drawing 2,3), between d at this time, c-(θ) can be indicated are as follows:
Eight magnetoresistive films are duplicate, so resistance can be replaced with resistivity.
Δρ1=pC(θ)-ρ0 (6)
Δρ2=pD(θ)-ρ0 (7)
At this point, (1) (2) are substituted into (8), it is available:
In formula (6) (7) (8) (9),Δ ρ=ρ||-ρ⊥, ρ||It indicates when the intensity of magnetization and electric current are equidirectional
Resistivity, ρ⊥Resistivity when then indicating orthogonal.If connecting direct current biasing V between the ac of deviceb, then can be in b, d
Between obtain output voltage Uout, which is twice of externally-applied magnetic field frequency, so the device has two SHG properties.
Due to using octagon structure, so that internal resistance becomes larger, identical voltage, current is small, and fuel factor is low, and there is temperature to mend
Benefit is repaid, working sensor is more stable.The structure can also make measurement sensitiveer, can measure small magnetic field angle and become
Change.
Its equivalent circuit is as shown in Figure 3.Wherein a, b, c, d are the electrodes that copper conductive material is fabricated to.Externally-applied magnetic fieldWith
Thin film planar is parallel, is θ with magnetoresistive film C current direction angle.Apply DC voltage V between a, cb, work as magnetic direction
Change, voltage can also change between b, d, by voltage between measurement b, d, can finally be converted to the angle in magnetic field.
A kind of preparation process for measuring the octagon thin-film magnetoresistive sensor of magnetic direction of the invention is:
1) prepare silicon chip, and cleaned, dried；
2) oxidation forms one layer of membranous layer of silicon oxide on a silicon substrate；
3) layer of NiFe is sputtered, after annealing, is lithographically formed magnetoresistive strip according to certain pattern mask plate；
4) Cu electrode is sputtered, four test electrodes are lithographically formed；
5) subsequent encapsulation.
Present invention be distinguished in that:
A kind of octagon thin-film magnetoresistive sensor of the invention uses a kind of novel octagon structure, so that
Internal resistance becomes larger, and identical voltage, current is small, and fuel factor is small, and has temperature-compensating benefit, and working sensor is more stable.It should
Structure can also make measurement sensitiveer, can measure small magnetic field angle variation.
The structure for meeting conditions above is considered as the octagon thin-film magnetoresistive for measuring magnetic direction of the invention and passes
Sensor.
Claims (7)
1. a kind of octagon thin-film magnetoresistive sensor, which is characterized in that the magnetic field sensor includes being sequentially overlapped from bottom to top
Substrate (1), insulating layer (2), anisotropic magnetic resistance layer (3) and the top electrode (4) of setting；Wherein, anisotropic magnetic resistance layer
(3) by eight duplicate anisotropic magnetoresistive film tape A, B, C, D, E, F, G, I in the way of being linked in sequence end to end positive eight
Side shape rearranges, and the phase of adjacent membranes item difference is 135 °.
2. a kind of octagon thin-film magnetoresistive sensor described in accordance with the claim 1, which is characterized in that the anisotropic magnetic
What the identical magnetoresistive film item of eight anisotropic magneto-resistive effects of resistance layer (3) was selected is with anisotropic magneto-resistive effect
Iron-nickel alloy.
3. a kind of octagon thin-film magnetoresistive sensor according to claim 2, which is characterized in that in the iron-nickel alloy
The content of iron is 20%.
4. a kind of octagon thin-film magnetoresistive sensor described in accordance with the claim 1, which is characterized in that described eight complete one
The flat shape of anisotropic magnetoresistive film tape A, B, C, D, E, F, G, I of sample are continuously coupled S-shaped.
5. a kind of octagon thin-film magnetoresistive sensor described in accordance with the claim 1, which is characterized in that the substrate 1 uses
Material be Si.
6. a kind of octagon thin-film magnetoresistive sensor described in accordance with the claim 1, which is characterized in that the insulating layer (2)
Using SiO2, have non magnetic, good insulating properties, stable chemical property, intensity hardness high stretch good.
7. according to a kind of octagon thin-film magnetoresistive sensor described in claims 1, which is characterized in that top electrode
(4) material used in is copper.
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Application publication date: 20190514 |