CN202794487U - Magneto-resistor magnetic field gradient sensor - Google Patents
Magneto-resistor magnetic field gradient sensor Download PDFInfo
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- CN202794487U CN202794487U CN 201220094022 CN201220094022U CN202794487U CN 202794487 U CN202794487 U CN 202794487U CN 201220094022 CN201220094022 CN 201220094022 CN 201220094022 U CN201220094022 U CN 201220094022U CN 202794487 U CN202794487 U CN 202794487U
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Abstract
The utility model discloses a magneto-resistor magnetic field gradient sensor. The sensor comprises a substrate, a magneto-resistor bridge and permanent magnets. The magneto-resistor bridge and the permanent magnets are respectively arranged on the substrate. The magneto-resistor bridge comprises two or more than two magneto-resistor arms. Each magneto-resistor arm is composed of one or more magneto-resistor elements. Each magneto-resistor element comprises a magnetic pinning layer. The magnetic pinning layers of all the magneto-resistor elements have the same magnetic moment direction. The permanent magnets are arranged adjacent to each magneto-resistor arm for providing a bias field and making the offset in the response curves of the magneto-resistor elements back to zero. A pad of the magneto-resistor magnetic field gradient sensor can be connected to an ASIC or a lead frame packaging pin through a lead.
Description
Technical field
The utility model relates to a kind of magneto-resistance magnetic field gradient sensor, and the especially a kind of MTJ of employing magneto-resistor is the magnetic field gradient sensor of sensitive element.
Background technology
Magnetic Sensor is widely used in the contemporary electronic systems and measures the physical parameters such as electric current, position, direction with induced field intensity.In the prior art, have many dissimilar sensors to be used for measuring magnetic field and other parameters, for example adopt Hall element, anisotropic magnetoresistance (AMR) or giant magnetoresistance (GMR) are the Magnetic Sensor of sensitive element.
Magnetic Sensor sensitivity take Hall element as sensitive element is very low, usually amplifies magnetic field with the magnetism gathering rings structure, improves the Hall output sensitivity, thereby has increased the volume and weight of sensor, and it is large that the while Hall element has power consumption, the defective of poor linearity.Although AMR element remolding sensitivity Hall element is high a lot, but its range of linearity is narrow, the Magnetic Sensor of while take AMR as sensitive element need to arrange the set/reset coil it is preset-reset operation, cause the complexity of its manufacturing process, being arranged on of loop construction also increased power consumption when increasing size.Magnetic Sensor take the GMR element as sensitive element has higher sensitivity than Hall element, but its range of linearity is on the low side, and simultaneously, the response curve of GMR element is even symmetry, can only measure unipolar magnetic field gradient, can not measure the bipolarity magnetic field gradient.
Tunnel junction magneto-resistor (MTJ, Magnetic Tunnel Junction) element is the Novel magnetic power inhibition effect sensor that begins in recent years commercial Application, its utilization be the tunneling magnetoresistance (TMR of Researches for Magnetic Multilayer Films, Tunnel Magnetoresistance) magnetic field is responded to, than finding that before also AMR element and the GMR element of practical application have larger resistance change rate.The MTJ elements relative has better temperature stability in Hall element, higher sensitivity, and lower power consumption, better the linearity does not need extra magnetism gathering rings structure; Have better temperature stability with respect to the AMR element, higher sensitivity, the wider range of linearity does not need extra set/reset loop construction; Has better temperature stability with respect to the GMR element, higher sensitivity, lower power consumption, the wider range of linearity.
Although the MTJ element has high sensitivity, but the Magnetic Sensor take the MTJ element as sensitive element can be subject to the interference of external magnetic field when Weak magentic-field is surveyed, highly sensitive mtj sensor is not realized low-cost large-scale production simultaneously, particularly the yield rate of sensor depends on the off-set value of MTJ element magnetic resistance output, the magnetic resistance that consists of the MTJ element of electric bridge is difficult to the matching degree that reaches high, and mtj sensor integrated manufacturing process on same semiconductor chip is very complicated simultaneously.
Summary of the invention
For the problems referred to above, the utility model provides a kind of magnetic field gradient sensor take the MTJ element as sensitive element, and it is strong to have an anti-external magnetic field interference performance, the magnetic field common-mode rejection ratio is high, and highly sensitive, the range of linearity is wide, low in energy consumption, volume is little, the advantage of good temp characteristic.
The utility model discloses a kind of magneto-resistance magnetic field gradient sensor, it comprises substrate, be separately positioned on on-chip magneto-resistor electric bridge and permanent magnet, described magneto-resistor electric bridge comprises two or more magneto-resistor arms, described magneto-resistor arm is made of one or more magnetoresistive elements, this magnetoresistive element has pinned magnetic layer, and the magnetic moment direction of the pinned magnetic layer of all magnetoresistive elements is identical, described permanent magnet is arranged near the be used to bias-field being provided and the skew of the response curve of magnetoresistive element being made zero of each magneto-resistor arm, and the pad of this magneto-resistance magnetic field gradient sensor can be connected on the packaging pin of ASIC or lead frame by lead-in wire.
Preferably, described magnetoresistive element is the MTJ element.
Preferably, the shape of described magnetoresistive element has anisotropy.
Preferably, described magnetoresistive element adopts same operation preparation at same substrate, is of similar shape and resistance value.
Preferably, described magneto-resistor electric bridge is the gradient half-bridge.
Preferably, described magneto-resistor electric bridge is the Hui Sitong full-bridge, the sensitive direction of the magneto-resistor brachium pontis of favour stone full-bridge is identical, gradient magnetic with detection space, the arm resistance that is in relative position in the favour stone full bridge structure is in the same position of gradient magnetic, and the arm resistance that is in the adjacent position in the Hui Sitong full bridge structure is in the diverse location of gradient magnetic.
Preferably, permanent magnet is magnetized to regulate the magnetization of this permanent magnet and direction to regulate the output performance of magneto-resistance magnetic field gradient sensor.
Preferably, described magneto-resistance magnetic field gradient sensor is the one chip magneto-resistance magnetic field gradient sensor.
The utility model adopts above structure, and it is strong to have an anti-external magnetic field interference performance, and the magnetic field common-mode rejection ratio is high, and highly sensitive, the range of linearity is wide, and is low in energy consumption, and volume is little, the advantage of good temp characteristic.
Description of drawings
Fig. 1 is the synoptic diagram of tunnel junction magnetoresistive element (MTJ).
Fig. 2 is the magnetic resistance change rate response diagram that is applicable to the MTJ element of linear magnetic field measurement.
Fig. 3 is a plurality of MTJ elements series connection and form the synoptic diagram of an equivalent MTJ magneto-resistor 20.
Fig. 4 is permanent magnet 22 putting position synoptic diagram on MTJ element 1 and the sheet.
Fig. 5 is permanent magnet 22 shown in Figure 4 and the sectional view of MTJ element 1, has described the magnetic induction line distribution plan of one group of lift magnet among the figure.
Fig. 6 controls the skew of MTJ element responds and the synoptic diagram of saturation field intensity by the angle that permanent magnet 22 and sensitive axes 23 are set.
Fig. 7 is the structural representation of semi-bridge type MTJ magneto-resistor gradient magnetic sensor.
Fig. 8 is the output survey sheet of semi-bridge type MTJ magneto-resistor gradient magnetic sensor.
Fig. 9 is the principle schematic of bridge-type MTJ magneto-resistor gradient magnetic sensor.
Figure 10 is the structural representation of bridge-type MTJ magneto-resistor gradient magnetic sensor.
Figure 11 is the output survey sheet of bridge-type MTJ magneto-resistor gradient magnetic sensor.
Embodiment
Fig. 1 is the concept of function sketch of a MTJ multilayer film element.A MTJ element 1 generally comprises ferromagnetic layer or the artificial inverse ferric magnetosphere (Synthetic Antiferromagnetic, SAF) 5 on upper strata, and the tunnel barrier layer 4 between the ferromagnetic layer of lower floor or 3, two magnetosphere of SAF layer.In this structure, the ferromagnetic layer on upper strata (SAF layer) 5 has formed the magnetic free layer, and its magnetic moment direction 7 changes with the change of external magnetic field.The ferromagnetic layer of lower floor (SAF layer) 3 is fixing magnetospheres, because its magnetic moment direction 8 is to be pinned at a direction, under general condition can not change, and ferromagnetic layer (SAF layer) 3 is also referred to as nailed layer usually.Pinning layer is deposited iron magnetosphere or SAF layer above or below antiferromagnetic layer 2 normally.Mtj structure normally is deposited on the top of the bottom electrode layer 9 of conduction, and the top of mtj structure is top electrode layer 6 simultaneously.The relative magnetic moment direction of the bottom electrode layer 9 of MTJ and the 12 stands for freedom layers 5 of the measured resistance value between the top electrode layer 6 and pinning layer 3.When the magnetic moment direction 8 of magnetic moment 7 directions of the ferromagnetic layer (SAF layer) 5 on upper strata and the ferromagnetic layer 3 of lower floor was parallel, the resistance 12 of whole element was at low resistance state.When the magnetic moment direction antiparallel of ferromagnetic layer (SAF layer) 5 the magnetic moment direction on upper strata and the ferromagnetic layer of lower floor 3, the resistance 11 of whole element is at high-impedance state.By known technology, the resistance of MTJ element 1 can be along with externally-applied magnetic field linear variation between high-impedance state and low resistance state.
Bottom electrode layer 9 electrically contacts with top electrode layer 6 direct and relevant inverse ferric magnetosphere 2 and magnetic free layers 5.Electrode layer adopts non-magnetic conductive material usually, can carry electric current input ohmmeter 34.Ohmmeter 34 is applicable to the known electric current that passes whole tunnel junction, and electric current (or voltage) is measured.Generally, tunnel barrier layer 4 provides most of resistance of device, be about 1000 ohm, and the resistance of all conductors is about 10 ohm.Bottom electrode layer 9 is positioned at insulating substrate 10 tops, and insulating substrate 10 is wider than bottom electrode layer 9, and it is positioned at the top of the bottom substrate 11 of other materials formation.The material of bottom substrate is silicon, quartz, pyroceram, GaAs, AlTiC or can be in any other integrated material of wafer normally.Silicon becomes best selection owing to it is easy to be processed as integrated circuit (although magnetic sensor does not always need sort circuit).
The GMR that suitable linear magnetic field is measured or the response diagram of MTJ element are as shown in Figure 2.Response curve 13 is saturated at low resistance state 14 and high-impedance state 15, R
LAnd R
HRepresent respectively the resistance of low resistance state and high-impedance state.The zone of response curve 13 between saturation field is with outfield (H) 19 linear change.Outfield 19 is parallel to the sensitive axes 23 of sensing element.Magnetic moment 8 and sensitive axes 23 antiparallels of nailed layer 3 mean the direction of its sensing-H.When magnetic moment 8 antiparallel of the magnetic moment 7 of free layer 5 and nailed layer 3, the response curve 13 of magnetoresistive element is maximal value R
H, when both are parallel, be minimum value R
LThe intermediate value of magneto-resistor response curve 13 changes with the variation of the angle between free layer 5 and the nailed layer 3.Response curve 13 is not point-symmetric along H=0.Saturation field 17, the 18th is along H
OPoint 16 typical biased fields, so R
LSaturation field corresponding to value is more near the point of H=0.H
OValue is commonly called " orange peel effect (Orange Peel) " or " Nai Er is coupled (Neel Coupling) " field, and its representative value is 1 to 40 Oe.It is relevant with structure and the flatness of ferromagnetic thin film in the magnetoresistive element, depends on material and manufacturing process.
The duty in the zone of response curve as shown in Figure 2 between saturation field 17 and 18 can be approximated to be equation:
Wherein, H
SIt is saturation field.H
SBe defined as quantitatively the tangent line value corresponding with the intersection point of the tangent line of positive and negative saturation curve of the range of linearity, this value is with respect to H at response curve
OGet in the situation that the asymmetry of point is eliminated.
Shown in Figure 2 is in the ideal case response curve 13.In the ideal situation, magneto-resistor R is perfect linear relationship with the variation of outfield H, and (under actual conditions, the response curve of magneto-resistor has the phenomenon of hysteresis with the outfield variation, and we are referred to as magnetic hysteresis not have simultaneously magnetic hysteresis.The response curve of magneto-resistor is a loop, and the magnetic hysteresis as the magnetic resistance material of using is very little usually, can regard in actual use a perfect linearity curve as).In the sensor field of real world applications, because the restriction of magnetic sensing design and the defective of material, this curve 13 can be more crooked.
Because size is little, MTJ element 1 can connect into the MTJ magneto-resistor 20 of an equivalence to increase sensitivity, and noise decrease is to the number of 1/F(F for the MTJ element 1 of series connection), can improve its ESD performance simultaneously, its embodiment is seen Fig. 3.These MTJ element strings 20 are used as the magneto-resistor arm of more complicated circuit structure.MTJ element 1 becomes sandwich structure in 6 layers of centre of hearth electrode 9 and top electrode, and inner electric current 21 is vertically crossed top electrode layer 6 and bottom electrode layer 9 by MTJ element 1 horizontal direction alternating current.Hearth electrode 9 is above insulation course 10, and insulation course 10 is positioned on the bottom substrate 11.End at each element string is pad, namely resistive arm and are connected that element or ohmmeter 34 connect local or can by its be connected with chip other circuit parts connection and without any other connected mode.The direction of current flowing does not exert an influence to effective resistance of magneto-resistor arm 20 under normal conditions, and the resistance value of MTJ element string 20 is can be according to number setting and the adjustment of MTJ element 1.
Electric bridge is the voltage signal that the resistance change with magnetic resistance sensor is converted into, and makes its output voltage be convenient to be exaggerated.This can change the noise of signal, and the cancellation common-mode signal reduces that temperature is floated or other deficiency.Above-mentioned MTJ element string 20 can connect and compose electric bridge.
As shown in Figure 4, MTJ element 1 is placed between two permanent magnets 22.Has gap (Gap) 38 between the permanent magnet 22, width (W) 39, thickness (t) 40 and length (L
y) 41.Permanent magnet 22 is designed to provide one perpendicular to the bias-field H of gradiometer sensitive axes 23
Cross27.By applying a large magnetic field permanent magnet 22 is magnetized, the Distribution of Magnetic Field 43 around the final permanent magnet 22 as shown in Figure 5.
The magnetic field of permanent magnet 22 is considered to be in the magnetic charge that forms between the edge 35 of magnet as shown in Figure 6 and the result of magnetic moment boundary condition effect.The magnetic charge size is along with remanent magnetism M
rSize and Orientation θ
Mag37 change, and with the tiltangleθ of permanent magnet
Sns44 is relevant:
The magnetic field that magnetic charge produces is:
Work as θ
Mag=θ
RefDuring=pi/2, the central magnetic field intensity of MTJ element 1 is remanent magnetism M
rFunction:
(4)
Formula (4) is W39 shown in Figure 4 and the function of Gap38, and this function representation can change permanent magnet in the magnetic field that the MTJ position of components produces by shape dimension dimension and the direction that changes magnet 22, and then changes the saturation field of MTJ element 1.
Then perpendicular to the sensitive direction 23 of MTJ element, permanent magnet 22 for the added magnetic field of MTJ element is
（5）
Along MTJ element sensitivity direction 23, permanent magnet 22 added magnetic fields are
As can be seen from the above, can be by regulating the thickness of permanent magnet, shape and angle θ
MagThereby, change Hoff, in order to compensate the nile coupled field Ho of MTJ element itself, so that output characteristics is easier to use and obtain better performance.On the other hand, also can regulate H
CrossThereby, change the saturation field of MTJ element output characteristics, and regulate accordingly its sensitivity.
By the angle theta of permanent magnet 22 and sensitive axes 23 is set
Mag37, can produce simultaneously H
Cross27 and biased field H
Off26, can set the saturation field of MTJ element, eliminate simultaneously Nai Er coupling skew, the response curve of MTJ element is made zero, the method is for the symmetry of optimizing electric bridge output, Nai Er skew and sensitivity.In addition, remanent magnetism M is set
rAngle theta with sensitive axes 23
MagThe 37th, for after the preparation of gradiometer chip, can provide a micromatic setting can minimize off-set value or symmetry, this method can improve the excellent rate of product.
The magneto-resistor response equation of single MTJ element is shown in the formula (1), and then its sensitivity is:
Namely can change by the shape that changes permanent magnet and MTJ element the response characteristic of MTJ element.
Fig. 7 is the structural representation of semi-bridge type MTJ gradient magnetic sensor.As shown in Figure 7, MTJ magneto-resistor R1, R2 that same sensitive direction is placed consist of a half-bridge, and magneto-resistor is in substrate 10,11 preparations and have on-chip electric contact, can realize its Electricity Federation by it.There are at present a variety of modes to connect the external pad of magneto-resistor and electric bridge.Typical syndeton comprises: integrated chip connection, Bonding and soldered ball connect.The permanent magnet 22 that is obliquely installed around the MTJ magneto-resistor 20, at pad 28 and pad 29 two ends input steady voltage V
Bias, outfield H changes in gradient along the direction of sensitive axes 23, and different along the change in resistance of magnetic induction line direction diverse location two MTJ magneto-resistors R1 and R2, arrow 8 represents the magnetic moment direction of two MTJ magneto-resistor 20 nailed layers 3, and pad 30 is output terminal V
OUTThe resistance of the MTJ magneto-resistor 20 that generally prepares at same substrate is close to identical, can not be identical, there is certain difference, the resistance of two MTJ magneto-resistors replaces with R1 and R2 respectively, its residing field strength is respectively H1 and H2, and H1 and H2 can be decomposed into:
,
, (9)
Wherein,
H wherein
CM, H
DMBe called common mode external magnetic field and differential mode external magnetic field.
In the ideal case, R1=R2, S
R1=S
R2, namely the consistance of MTJ magneto-resistor R1 and R2 is identical, adds a voltage V to half-bridge
Bias, then for the common mode magnetic field H
CM, half-bridge output terminal V
OUT30 voltage is:
Get V
Bias=1V, then its common mode magnetic field sensitivity S
CM=dV
1/ dH
CM=0
Its output is not with H
CMChange, namely the gradient half-bridge is insensitive to the outfield, can prevent the interference of external magnetic field.
For the differential mode magnetic field H
CM, then have:
Ideally, R1=R2, S
R1=S
R2, then have:
, (13)
Can find out that the right output of this half-bridge gradiometer is with differential mode external magnetic field H
DMVariation and change, get V
Bias=1V, then its sensitivity is,
, (14)
As can be seen from the above equation, the gradient half-bridge only produces response to differential mode magnetic field, and output signal, have simultaneously good anti-outfield interference performance, the measurement result of the typical case of gradient half-bridge output wherein differently from common half-bridge is as shown in Figure 8, transverse axis is gradient magnetic, magnetic field is a gradient fields, and the intensity along magnetic induction line direction magnetic field decays, and the outfield strength H1 that is positioned at the magneto-resistor (such as R1 and R2) of gradient magnetic diverse location is different with H2.
Because there are fine difference in R1 and R2, while S
R1And S
R2There is fine difference, so that gradient half bridge sensor in the middle of the practical application is to the common mode magnetic field H
CMHave certain response, but its to the response sensitivity in common mode magnetic field far below differential mode magnetic field, its ability to the interference in outfield can represent with common-mode rejection ratio CMRR:
According to technological ability, usually can reach 40dB or more than.
Fig. 9 is the concept map of bridge-type MTJ gradient magnetic sensor, and Figure 10 is the structural representation of bridge-type MTJ gradient magnetic sensor.As shown in Figure 9, MTJ magneto-resistor R1, R2, R3, R4 that sensitive direction is identical consist of a full-bridge, and magneto-resistor is in substrate 10,11 preparations and have on-chip electric contact, can realize its Electricity Federation by it.There are at present a variety of modes to connect the external pad of magneto-resistor and electric bridge.Typical syndeton comprises: integrated chip connection, Bonding and soldered ball connect.As shown in figure 10, be in the arm resistance R1 of relative position and the same position that R4 is in gradient magnetic in the favour stone full bridge structure, the R2 and the R3 that are in relative position in the favour stone full bridge structure are in the gradient magnetic same position, the sensitive direction of all arm resistances is identical, the permanent magnet 22 that is obliquely installed around the MTJ magneto-resistor 20, at pad 28 and pad 29 two ends input steady voltage V
BiasOutfield H changes in gradient along the direction of sensitive axes 23, along two MTJ magneto-resistors of magnetic induction line direction diverse location R1 and R2(R3 and R4) change in resistance different, arrow 8 represents the magnetic moment direction of the nailed layer 3 of four MTJ magneto-resistors 20, and the voltage difference between the output terminal pad 32 and 33 (V2-V1) is output voltage V
OUT
In the ideal case, the V of gradient full-bridge
OUTTo the common mode magnetic field H
DMNot response for differential mode magnetic field, then has:
Ideally, R1=R2=R3=R4, S
R1=S
R2=S
R3=S
R4=S
RThen have:
, (18)
Wherein, R is the resistance of MTJ magneto-resistor 20, S
RSensitivity for MTJ magneto-resistor 20.Can find out that bridge-type gradiometer and semi-bridge type gradiometer have identical inhibition common mode outfield interference performance, its output sensitivity is the twice of semi-bridge type gradiometer simultaneously, and the typical case of gradient full-bridge exports measurement result as shown in figure 11.
Above-mentioned half-bridge can adopt identical technique one time to produce to form at same substrate with the bridge-type gradiometer, and we are referred to as the one chip magneto-resistance magnetic field gradient sensor usually.Also can adopt different chip packages, adopt identical technique to prepare n magneto-resistor at same substrate, then with realizing being electrically connected by the electric contact of lead-in wire connection magneto-resistor after the single magneto-resistor chip cutting processing, consist of half-bridge or full bridge structure.No matter be one chip encapsulation or the gradiometer of multi-chip package, its external pad can be connected to ASIC(Application Specific Integrated Circuit, special IC) or the packaging pin of lead frame on.
More than specific embodiment of the present utility model is illustrated in conjunction with diagram, clearly, on the basis of not leaving scope and spirit of the present utility model, can much revise prior art and technique.In the technical field, the common knowledge of a GPRS just can in technology main idea scope of the present utility model, be carried out diversified change under of the present utility model.
Claims (7)
1. magneto-resistance magnetic field gradient sensor, it is characterized in that: it comprises substrate, be separately positioned on on-chip magneto-resistor electric bridge and permanent magnet, described magneto-resistor electric bridge comprises two or more magneto-resistor arms, described magneto-resistor arm is made of one or more magnetoresistive elements, this magnetoresistive element has pinned magnetic layer, and the magnetic moment direction of the pinned magnetic layer of all magnetoresistive elements is identical, described permanent magnet is arranged near the be used to bias-field being provided and the skew of the response curve of magnetoresistive element being made zero of each magneto-resistor arm, and the pad of this magneto-resistance magnetic field gradient sensor can be connected on the packaging pin of ASIC or lead frame by lead-in wire.
2. magneto-resistance magnetic field gradient sensor according to claim 1, it is characterized in that: described magnetoresistive element is the MTJ element.
3. magneto-resistance magnetic field gradient sensor according to claim 2, it is characterized in that: the shape of described magnetoresistive element has anisotropy.
4. magneto-resistance magnetic field gradient sensor as claimed in claim 3 is characterized in that: described magnetoresistive element adopts same operation preparation at same substrate, is of similar shape and resistance value.
5. magneto-resistance magnetic field gradient sensor according to claim 1, it is characterized in that: described magneto-resistor electric bridge is the gradient half-bridge.
6. magneto-resistance magnetic field gradient sensor according to claim 1, it is characterized in that: described magneto-resistor electric bridge is the Hui Sitong full-bridge, the sensitive direction of the magneto-resistor brachium pontis of favour stone full-bridge is identical, gradient magnetic with detection space, the arm resistance that is in relative position in the favour stone full bridge structure is in the same position of gradient magnetic, and the arm resistance that is in the adjacent position in the Hui Sitong full bridge structure is in the diverse location of gradient magnetic.
7. magneto-resistance magnetic field gradient sensor according to claim 1, it is characterized in that: described magneto-resistance magnetic field gradient sensor is the one chip magneto-resistance magnetic field gradient sensor.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102590768A (en) * | 2012-03-14 | 2012-07-18 | 江苏多维科技有限公司 | Magneto-resistance magnetic field gradient sensor |
| WO2014146570A1 (en) * | 2013-03-18 | 2014-09-25 | 江苏多维科技有限公司 | Tmr half-bridge magnetic field gradient sensor chip for currency detector magnetic head |
| CN108717169A (en) * | 2018-06-22 | 2018-10-30 | 钱正洪 | A kind of two-dimensional magnetic field sensor |
| CN112082579A (en) * | 2020-07-31 | 2020-12-15 | 中国电力科学研究院有限公司 | Wide-range tunnel magneto-resistance sensor and Wheatstone half bridge |
-
2012
- 2012-03-14 CN CN 201220094022 patent/CN202794487U/en not_active Withdrawn - After Issue
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102590768A (en) * | 2012-03-14 | 2012-07-18 | 江苏多维科技有限公司 | Magneto-resistance magnetic field gradient sensor |
| WO2013135117A1 (en) * | 2012-03-14 | 2013-09-19 | 江苏多维科技有限公司 | Magnetoresistance magnetic field gradient sensor |
| US9678178B2 (en) | 2012-03-14 | 2017-06-13 | MultiDimension Technology Co., Ltd. | Magnetoresistive magnetic field gradient sensor |
| WO2014146570A1 (en) * | 2013-03-18 | 2014-09-25 | 江苏多维科技有限公司 | Tmr half-bridge magnetic field gradient sensor chip for currency detector magnetic head |
| CN108717169A (en) * | 2018-06-22 | 2018-10-30 | 钱正洪 | A kind of two-dimensional magnetic field sensor |
| CN112082579A (en) * | 2020-07-31 | 2020-12-15 | 中国电力科学研究院有限公司 | Wide-range tunnel magneto-resistance sensor and Wheatstone half bridge |
| CN112082579B (en) * | 2020-07-31 | 2023-08-15 | 中国电力科学研究院有限公司 | Wide-range tunnel magneto-resistance sensor and Wheatstone half-bridge |
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