CN111044953A - Single-chip full-bridge TMR magnetic field sensor - Google Patents
Single-chip full-bridge TMR magnetic field sensor Download PDFInfo
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- CN111044953A CN111044953A CN202010010607.3A CN202010010607A CN111044953A CN 111044953 A CN111044953 A CN 111044953A CN 202010010607 A CN202010010607 A CN 202010010607A CN 111044953 A CN111044953 A CN 111044953A
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- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
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Abstract
Single-chip full-bridge TMR magnetic field sensor includes: the circuit comprises a magneto-resistor element and a bias current branch circuit, wherein the magneto-resistor element is connected in a bridge manner to form a full-bridge structure; the magneto-resistance element comprises a free layer, a pinning layer and a bias current layer, the bias current layer is connected with the bias current branch, and the bias current branch inputs bias current to the bias current layer; the directions of currents in the bias current layers in the magnetoresistive elements on the adjacent bridge arms are opposite, and the directions of currents in the bias current layers in the magnetoresistive elements on the opposite bridge arms are the same. The magnetic field sensor can form a full-bridge structure on a single chip at one time, and greatly reduces the difficulty and the production cost of the preparation process of the single-chip full-bridge magnetic sensor.
Description
Technical Field
The invention belongs to the technical field of magnetic field detection, and particularly relates to a push-pull full-bridge TMR magnetic field sensor.
Background
TMR (tunnel Magneto resistance) elements are new magnetoresistive effect sensors starting industrial applications in recent years, which sense a magnetic field by using the tunnel magnetoresistive effect of a magnetic multilayer film material, and TMR elements have a larger rate of resistance change, better temperature stability, higher sensitivity and a wider linear range than AMR elements, GMR elements, hall elements, which have been widely used, and the TMR elements do not require an additional set/reset coil structure with respect to AMR elements; TMR elements have lower power consumption relative to GMR elements; compared with the Hall element, the TMR element does not need an additional magnet gathering ring structure.
The TMR element is also called a Magnetic Tunnel Junction element (MTJ element for short), and the MTJ element is connected as a push-pull full bridge to change a signal of the Magnetic field sensor, so that an output voltage of the Magnetic field sensor is amplified, noise of the signal is changed, a common mode signal is cancelled, temperature drift is reduced, or other defects are overcome, which is beneficial to application of the Magnetic field sensor. Connecting the MTJ elements into a push-pull bridge requires that the magnetization directions of the pinned layers of the MTJ elements on adjacent arms are opposite, but because the magnetic field strength required for magnetic moment reversal is the same, the magnetization directions of the pinned layers of the MTJ elements on the same substrate are generally the same, which brings great difficulty to the fabrication of a push-pull bridge TMR magnetic field sensor. The push-pull full-bridge TMR magnetic field sensor is mainly manufactured by the following methods:
according to the push-pull full-bridge magnetic field sensor based on the two-time film forming process, the MTJ elements with opposite magnetization directions of the pinned layers are obtained through two-time deposition, but the thin film deposited for the first time is influenced when the thin film formed through the second-time deposition is annealed, so that the consistency of the two-time film forming is poor, the resistances of different bridge arms of the bridge type sensor are different, and the performance of the sensor is influenced.
A push-pull full-bridge magnetic field sensor based on multi-chip packaging is characterized in that MTJ elements with consistent magnetization directions of pinned layers are connected to form a full bridge, the MTJ elements on a group of opposite bridge arms in the full bridge are shielded and manufactured into wafers, one wafer is turned 180 degrees relative to the other wafer to form the push-pull full bridge, and then multi-chip packaging is carried out. The push-pull full-bridge magnetic field sensor manufactured by the multi-chip packaging technology has the problems of large size, high production cost and the like due to the fact that the push-pull full-bridge magnetic field sensor is formed by multi-chip packaging; and after the wafer is turned over, 2 wafers need to be accurately positioned in the same horizontal plane, so that the possibility of measuring loss of the sensor due to asymmetry of the MTJ elements is increased.
The push-pull full-bridge magnetic field sensor based on laser local annealing is characterized in that an MTJ full bridge is prepared on a substrate, then MTJ elements are annealed in the same magnetic field, and the magnetization directions of MTJ element pinning layers on different bridge arms are the same; and then local heating is carried out on the MTJ elements by adopting laser to assist magnetic moment reversal, so that the magnetization directions of the MTJ element pinning layers on adjacent bridge arms are opposite, and the push-pull full-bridge magnetic field sensor is realized. However, special equipment is required for local overturning of the laser heating auxiliary magnetic domain, so that the complexity of the manufacturing process of the sensor is increased, the cost is also increased, and the consistency of the resistance of each bridge arm of the push-pull full-bridge sensor manufactured by laser heating cannot be ensured.
Disclosure of Invention
The invention aims to provide a single-chip full-bridge TMR magnetic field sensor which can reduce the difficulty of the preparation process and the production cost.
In order to achieve the purpose, the invention adopts the following technical solutions:
single-chip full-bridge TMR magnetic field sensor includes: the circuit comprises a magneto-resistor element and a bias current branch circuit, wherein the magneto-resistor element is connected in a bridge manner to form a full-bridge structure; the magneto-resistance element comprises a free layer, a pinning layer and a bias current layer, the bias current layer is connected with the bias current branch, and the bias current branch inputs bias current to the bias current layer; the directions of the currents in the bias current layers of the magneto-resistance elements on the adjacent bridge arms are opposite, and the directions of the currents in the bias current layers of the magneto-resistance elements on the opposite bridge arms are the same.
Furthermore, the magnetoresistance element comprises a lower electrode layer, a pinning layer, a first insulating layer, a free layer, an upper electrode layer, a second insulating layer and a bias current layer which are sequentially arranged. .
Furthermore, the bias current branch comprises a first bias circuit branch and a second bias circuit branch, the first bias current branch is connected with the magneto-resistance elements on two adjacent bridge arms in the full-bridge structure, and the second bias current branch is connected with the magneto-resistance elements on the other two adjacent bridge arms in the full-bridge structure.
Furthermore, the bias current branch is connected with a bias current source, after current is input from a current input end, the current sequentially flows through the magneto-resistance elements and the magneto-resistance elements on two adjacent bridge arms through the first bias current branch, and sequentially flows through the magneto-resistance elements and the magneto-resistance elements on the other two adjacent bridge arms through the second bias current branch, and then flows out from a current output end.
Further, the magnetoresistance element is formed at one time by a film forming process.
Further, when no current flows in the bias current layer, the magnetization direction of the free layer and the magnetization direction of the pinned layer of the magnetoresistive element are perpendicular to each other.
Further, the current flowing through the bias current layer is the same in magnitude
According to the technical scheme, the bias current layer is arranged in the magneto-resistance elements, the bias current is input into the bias current layer through the bias current branch, the magnetization direction of the free layer of the magneto-resistance elements is changed by using the magnetic field generated by the bias current, the directions of the bias currents in the magneto-resistance elements on the adjacent bridge arms are opposite, so that the resistance values of the magneto-resistance elements on the adjacent bridge arms have opposite trends along with the change of an external magnetic field, and the directions of the bias currents in the magneto-resistance elements on the opposite bridge arms are the same, so that the resistance values of the magneto-resistance units have the same trend along with the change of the external magnetic field, and the push-. The magneto-resistor element can be formed on the same substrate at one time by adopting a film forming process, the magneto-resistor elements of all bridge arms in a full-bridge structure have better consistency, and the magneto-resistor element has the advantages of high sensitivity, small volume and capability of inhibiting temperature drift, and the magneto-resistor element has simple production process, does not need expensive equipment and reduces the production cost.
Drawings
In order to illustrate the embodiments of the present invention more clearly, the drawings that are needed in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings can be obtained by those skilled in the art without inventive effort.
FIG. 1 is a schematic structural diagram of an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a magnetoresistive element according to an embodiment of the invention;
FIG. 3 is a graph of resistance of a magnetoresistive element as a function of the angle between the magnetization of the free layer and the magnetization of the pinned layer;
FIGS. 4a and 4b are schematic diagrams of the magnetization directions of the free layers of the magnetoresistive elements on adjacent legs, respectively;
FIG. 5 is a graph of resistance versus external magnetic field in the sensitive direction for the free layer of the magnetoresistive element when its magnetization direction is in the state shown in FIG. 4 a;
FIG. 6 is a graph of resistance versus external magnetic field in the sensitive direction for the free layer of the magnetoresistive element when its magnetization direction is in the state shown in FIG. 4 b.
Detailed Description
In order to make the aforementioned and other objects, features and advantages of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the single-chip full-bridge TMR magnetic field sensor of the present embodiment includes 4 sets of magnetoresistive elements a1, a2, a3, a4, a first bias current branch L1 and a second bias current branch L2. The basic structure of each group of magneto-resistance elements is the same, 4 groups of magneto-resistance elements are connected in a bridge mode to form a full-bridge structure, and 4 groups of magneto-resistance elements are respectively positioned on four bridge arms of the full-bridge structure. The first bias current branch L1 is connected to the magnetoresistive elements (a1, a2) of two adjacent legs, and the second bias current branch L2 is connected to the magnetoresistive elements (a3, a4) of the other two adjacent legs. The bias current branch is connected to a bias current source (not shown), and after the current is input from the current input terminal a, the current flows through the magnetoresistive element a1 and the magnetoresistive element a2 in sequence via the first bias current branch L1, and flows through the magnetoresistive element a3 and the magnetoresistive element a4 in sequence via the second bias current branch L2, and then flows out from the current output terminal B. The current of the first bias current branch L1 of the present embodiment is in the opposite direction in magnetoresistive element a1 as in magnetoresistive element a2, and the current of the second bias current branch L2 is in the opposite direction in magnetoresistive element a3 as in magnetoresistive element a4, but the current in the magnetoresistive element on the opposite leg is in the same direction, i.e., the current in magnetoresistive element a1 is in the same direction as in magnetoresistive element a3, and the current in magnetoresistive element a2 is in the same direction as in magnetoresistive element a 4.
As shown in fig. 2, the magnetoresistive element includes, from bottom to top, a lower electrode layer 10, a pinned layer 11, a first insulating layer 12, a free layer 13, an upper electrode layer 14, a second insulating layer 15, and a bias current layer 16, in which the bias current layer is used to change the magnetization direction of the free layer in the magnetoresistive element. The free layer 13 is made of a ferromagnetic material, and the magnetization direction of the free layer 13 changes with a change in an external magnetic field. The pinned layer 11 is composed of a magnetic layer whose magnetization direction is fixed and an antiferromagnetic layer, and the magnetization direction of the pinned layer 11 is pinned in a fixed direction and does not change with a change in an external magnetic field. Bias current layer 16 is connected to a bias current branch, and current in the bias current branch flows through bias current layer 16. When there is no current flow through the bias current layer 16, the magnetization direction of the free layer 13 and the magnetization direction of the pinned layer 11 are perpendicular to each other (the direction indicated by the arrow in fig. 2), and when there is a current flow through the bias current layer 16, the current generates a magnetic field and changes the magnetization direction of the free layer 13. The measured resistance value between the upper electrode layer 14 and the lower electrode layer 10 is affected by the relative magnetization direction between the free layer 13 and the pinned layer 11. As shown in fig. 3, the resistance of the magnetoresistive element varies with the variation of the angle between the magnetization directions of the free layer and the pinned layer, and increases as the angle between the magnetization directions increases. When the included angle between the magnetization direction of the free layer and the magnetization direction of the pinning layer of the magneto-resistance element are consistent, the resistance value of the magneto-resistance element is consistent with the change of an external magnetic field under the action of the external magnetic field.
When current flows through the magnetoresistive elements on the adjacent bridge arms through the bias current branches, the magnetization direction of the free layers of the magnetoresistive elements changes differently because the directions of the currents in the magnetoresistive elements (bias current layers) are opposite. FIGS. 4a and 4b are schematic diagrams of the magnetization directions of the free layer and the pinned layer, respectively, when currents in opposite directions pass through two magnetoresistive elements located on adjacent legs. As shown in fig. 4a, the direction of the current in the bias current layer 16 is perpendicular to the paper surface, and the magnetization direction of the free layer 13 changes from a state perpendicular to the magnetization direction of the pinned layer 11 to an obtuse angle therebetween under the influence of the magnetic field generated by the current. As shown in fig. 4b, the direction of the current in the bias current layer 16 is perpendicular to the paper surface, and the magnetization direction of the free layer 13 changes from a state perpendicular to the magnetization direction of the pinned layer 11 to an angle therebetween which is acute under the influence of the magnetic field generated by the current.
As shown in fig. 5, when the magnetization direction of the free layer of the magnetoresistive element is in the state shown in fig. 4a, i.e., the angle between the magnetization direction of the free layer and the magnetization direction of the pinned layer is obtuse, the resistance R of the magnetoresistive element decreases if the external magnetic field increases, whereas the resistance R of the magnetoresistive element increases if the external magnetic field decreases. As shown in fig. 6, when the magnetization direction of the free layer of the magnetoresistive element is in the state shown in fig. 4b, i.e., the angle between the magnetization direction of the free layer and the magnetization direction of the pinned layer is acute, the resistance R of the magnetoresistive element increases if the external magnetic field increases, whereas the resistance R of the magnetoresistive element decreases if the external magnetic field decreases. That is to say, for two magnetoresistive elements with opposite current directions in the bias current layer, under the influence of the same external magnetic field, the resistance value changes of the two magnetoresistive elements are always opposite.
In the full-bridge magnetic field sensor, the magnetoresistive elements on the adjacent bridge arms, such as a1 and a2, a2 and a3, a3 and a4, and a4 and a1, have opposite change trends of the resistance values of the magnetoresistive elements because the directions of currents in the magnetoresistive elements are opposite (in the figure, the resistance values of the magnetoresistive elements are opposite at all times) (in the figure, the resistance values of the magnetoresistive elements are opposite in change trends of the resistance values of the magnetoresistive elements are opposite in the5) While the magnetoresistive elements on the opposite arm, such as a1 and a3, a2 and a4, have the same tendency to change the resistance values of these magnetoresistive cells because the direction of the current in the magnetoresistive elements is the same (fig. 6). As shown in FIG. 1, the magnetoresistive element is connected to an input electrode (C, D) and an output electrode (E, F) when a constant voltage V is applied between the input electrode C, DBIASAt this time, the voltage between the output electrodes E, F changes with the change of the external magnetic field M, i.e., a push-pull full-bridge magnetic field sensor is formed.
The magnetoresistance elements can be formed at one time by adopting a film forming process, and the magnetoresistance elements can be arranged in parallel. The magnetoresistive element may have a magnetization direction of the free layer and a magnetization direction of the pinned layer perpendicular to each other through a secondary annealing process. A bias current layer is arranged in the magneto-resistance element, bias current is input into the bias current layer through a bias current branch circuit, and the direction and the size of a generated bias magnetic field are adjusted by adjusting the arrangement mode of each magneto-resistance element, the flow direction of the current in the bias current layer and the size of the current. In the foregoing embodiment, two bias current branches are provided, but different numbers of bias current branches may be provided as required to provide bias current for each magnetoresistive element, so that the directions of currents in bias current layers of magnetoresistive elements on adjacent bridge arms are opposite, and the directions of currents in bias current layers of magnetoresistive elements on opposite bridge arms are the same.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
1. Single chip full-bridge TMR magnetic field sensor, its characterized in that includes: the circuit comprises a magneto-resistor element and a bias current branch circuit, wherein the magneto-resistor element is connected in a bridge manner to form a full-bridge structure;
the magneto-resistance element comprises a free layer, a pinning layer and a bias current layer, the bias current layer is connected with the bias current branch, and the bias current branch inputs bias current to the bias current layer;
the directions of currents in the bias current layers in the magnetoresistive elements on the adjacent bridge arms are opposite, and the directions of currents in the bias current layers in the magnetoresistive elements on the opposite bridge arms are the same.
2. The single-chip full-bridge TMR magnetic field sensor according to claim 1, wherein: the magnetoresistance element comprises a lower electrode layer, a pinning layer, a first insulating layer, a free layer, an upper electrode layer, a second insulating layer and a bias current layer which are sequentially arranged. .
3. The single-chip full-bridge TMR magnetic field sensor according to claim 1 or 2, wherein: the bias current branch circuit comprises a first bias circuit branch circuit and a second bias circuit branch circuit, the first bias current branch circuit is connected with the magneto-resistance elements on two adjacent bridge arms in the full-bridge structure, and the second bias current branch circuit is connected with the magneto-resistance elements on the other two adjacent bridge arms in the full-bridge structure.
4. The single-chip full-bridge TMR magnetic field sensor of claim 3, wherein: the bias current branch is connected with a bias current source, after current is input from a current input end, the current sequentially flows through the magneto-resistance elements and the magneto-resistance elements on two adjacent bridge arms through the first bias current branch, sequentially flows through the magneto-resistance elements and the magneto-resistance elements on the other two adjacent bridge arms through the second bias current branch, and then flows out from a current output end.
5. The single-chip full-bridge TMR magnetic field sensor according to claim 1, wherein: the magnetoresistive element is formed at one time by a film forming process.
6. The single-chip full-bridge TMR magnetic field sensor according to claim 1, wherein: when no current flows in the bias current layer, the magnetization direction of the free layer and the magnetization direction of the pinning layer of the magnetoresistive element are perpendicular to each other.
7. The single-chip full-bridge TMR magnetic field sensor according to claim 1, 2, 4, 5 or 6, wherein: the magnitude of the current flowing through the bias current layers is the same.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111965571A (en) * | 2020-07-29 | 2020-11-20 | 珠海多创科技有限公司 | Preparation method of GMR magnetic field sensor |
| CN112082579A (en) * | 2020-07-31 | 2020-12-15 | 中国电力科学研究院有限公司 | Wide-range tunnel magneto-resistance sensor and Wheatstone half bridge |
| CN114487545A (en) * | 2021-12-31 | 2022-05-13 | 歌尔微电子股份有限公司 | Current sensor, electronic device, and detection device |
| CN114509593A (en) * | 2021-12-31 | 2022-05-17 | 歌尔微电子股份有限公司 | Current sensor, electronic device, and detection device |
| KR20220102440A (en) * | 2021-01-13 | 2022-07-20 | 하이윈 마이크로시스템 코포레이션 | Position sensing mechanism |
| CN117295387A (en) * | 2023-11-24 | 2023-12-26 | 江苏多维科技有限公司 | Preparation method of bridge type magnetic resistance sensor |
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2020
- 2020-01-06 CN CN202010010607.3A patent/CN111044953A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111965571A (en) * | 2020-07-29 | 2020-11-20 | 珠海多创科技有限公司 | Preparation method of GMR magnetic field sensor |
| CN112082579A (en) * | 2020-07-31 | 2020-12-15 | 中国电力科学研究院有限公司 | Wide-range tunnel magneto-resistance sensor and Wheatstone half bridge |
| CN112082579B (en) * | 2020-07-31 | 2023-08-15 | 中国电力科学研究院有限公司 | Wide-range tunnel magneto-resistance sensor and Wheatstone half-bridge |
| KR20220102440A (en) * | 2021-01-13 | 2022-07-20 | 하이윈 마이크로시스템 코포레이션 | Position sensing mechanism |
| KR102533278B1 (en) * | 2021-01-13 | 2023-05-16 | 하이윈 마이크로시스템 코포레이션 | Position sensing mechanism |
| CN114487545A (en) * | 2021-12-31 | 2022-05-13 | 歌尔微电子股份有限公司 | Current sensor, electronic device, and detection device |
| CN114509593A (en) * | 2021-12-31 | 2022-05-17 | 歌尔微电子股份有限公司 | Current sensor, electronic device, and detection device |
| CN117295387A (en) * | 2023-11-24 | 2023-12-26 | 江苏多维科技有限公司 | Preparation method of bridge type magnetic resistance sensor |
| CN117295387B (en) * | 2023-11-24 | 2024-01-23 | 江苏多维科技有限公司 | Preparation method of bridge type magnetic resistance sensor |
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