CN114509593A - Current sensor, electronic device, and detection device - Google Patents
Current sensor, electronic device, and detection device Download PDFInfo
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Abstract
The invention discloses a current sensor, an electronic device and a detection device, wherein the current sensor comprises a detection circuit and a sensing assembly, the sensing assembly comprises a plurality of magnetoresistive memory units formed on a chip, the magnetization direction of a pinning layer of each magnetoresistive memory unit is arranged along the thickness direction of the magnetoresistive memory unit, at least two magnetoresistive memory units in the magnetoresistive memory units are connected to form a half-bridge circuit, the detection circuit comprises a first detection section and a second detection section, the first detection section and the second detection section which are respectively wound around the periphery of the two magnetoresistive memory units are arranged to generate a first induction magnetic field and a second induction magnetic field which have opposite magnetic field directions and are parallel to the magnetization direction of the pinning layer, so that the resistance values of the two magnetoresistive memory units are changed, the current sensor aims to solve the problem that a detection circuit of the existing current sensor cannot detect through a resistance power supply when a resistance unit of the sensor is a magnetic tunnel junction with perpendicular magnetic anisotropy.
Description
Technical Field
The present invention relates to the field of electronics, and more particularly, to a current sensor, an electronic device, and a detection apparatus.
Background
In the built-in current sensor BICS, the magnitude of the magnetic field generated by the current to be measured on the sensor is related to the thickness and width of the current conductor and the distance between the current conductor and the sensor. Generally, the smaller the width of the current conducting wire and the closer the distance to the sensor, the larger the generated magnetic field, and in order to generate a uniform magnetic field to be measured, the smaller the width of the resistance unit is required to be than the width of the current conducting wire. In the magnetoresistive sensor, in consideration of factors such as noise level reduction and linearity optimization, a resistance unit is usually formed by connecting a plurality of tunnel junctions or spin valves in series and parallel, so that the design of a current lead becomes complicated. In the above-described built-in current sensor, the sensing direction of the magnetoresistive sensor is in its plane. In order to further increase the induction sensitivity, a corresponding annular current lead or a magnetic flux collector structure and the like need to be designed, so that the micro-nano processing difficulty is also increased.
In addition, as the demand for memory density and reliability increases, the Magnetic random access memory is gradually shifting to the use of MTJ with Perpendicular Magnetic Anisotropy (PMA). In this type of MTJ, the magnetic moment of the free layer is oriented perpendicular to the film plane. At this time, if the MTJ detection circuit is used, the current lead structure that can generate only the in-plane magnetic field is not applicable.
Disclosure of Invention
The invention mainly aims to provide a current sensor, an electronic device and a detection device, and aims to solve the problem that a detection circuit of the existing current sensor cannot detect through a resistance power supply when a resistance unit of the sensor is a magnetic tunnel junction with perpendicular magnetic anisotropy.
In order to achieve the above object, the present invention provides a current sensor, wherein the current sensor includes:
the detection circuit is used for being conducted with a circuit to be detected of the chip; and the number of the first and second groups,
the sensing assembly comprises a plurality of magnetoresistive storage units formed on the chip, the magnetization direction of a pinning layer of each magnetoresistive storage unit is arranged along the thickness direction of each magnetoresistive storage unit, and at least two magnetoresistive storage units in the magnetoresistive storage units are connected to form a half-bridge circuit;
wherein, the detection circuitry includes first detection circuitry, first detection circuitry is including locating two respectively around first detection section and the second detection section of magnetoresistive memory cell week side, first detection section produces first induction magnetic field, the second detection section produces second induction magnetic field, flows through first detection section and flow through the helical direction of the electric current of second detection section is reverse setting, so that first induction magnetic field with second induction magnetic field is opposite.
Optionally, the first detection section and the second detection section are connected in series, the detection line further includes a connection section for communicating the first detection section and the second detection section, and the first detection section and the second detection section are respectively disposed at two sides of the connection section.
Optionally, the sensing assembly comprises four magnetoresistive memory units, and the four magnetoresistive memory units are connected to form a full bridge circuit;
the detection circuit comprises two first detection circuits, two first detection sections and two second detection sections are arranged around the periphery of the magnetic resistance storage unit, the first detection sections generate two first induction magnetic fields and two second induction magnetic fields, the second detection sections generate two second induction magnetic fields and flow through the first detection sections and the second detection sections in a reverse direction, so that the first induction magnetic fields and the second induction magnetic fields are opposite.
Optionally, the two first detection sections and the two second detection sections are connected in series, the detection line further comprises a connecting section for connecting the two first detection sections and the two second detection sections, the two first detection sections are arranged on one side of the connecting section, and the two second detection sections are arranged on the other side of the connecting section.
Optionally, each of the magnetoresistive memory cells comprises a plurality of magnetic tunnel junctions connected in series.
Optionally, each of the magnetoresistive memory cells includes a plurality of magnetic tunnel junctions connected in parallel.
Optionally, each of the magnetoresistive top electrodes and the detection lines are prepared by photolithography and evaporation.
Optionally, the top electrode of the magnetic tunnel junction and the detection line are disposed on the same plane.
The present invention also provides an electronic device, including the above current sensor, the current sensor including:
the detection circuit is used for being conducted with a circuit to be detected of the chip; and the number of the first and second groups,
the sensing assembly comprises a plurality of magnetoresistive storage units formed on the chip, the magnetization direction of a pinning layer of each magnetoresistive storage unit is arranged along the thickness direction of each magnetoresistive storage unit, and at least two magnetoresistive storage units in the magnetoresistive storage units are connected to form a half-bridge circuit;
wherein, the detection circuitry includes first detection circuitry, first detection circuitry is including locating two respectively around first detection section and the second detection section of magnetoresistive memory cell week side, first detection section produces first induction magnetic field, the second detection section produces second induction magnetic field, flows through first detection section and flow through the helical direction of the electric current of second detection section is reverse setting, so that first induction magnetic field with second induction magnetic field is opposite.
The present invention also provides a detection device, which includes the above current sensor, and the current sensor includes:
the detection circuit is used for being conducted with a circuit to be detected of the chip; and the number of the first and second groups,
the sensor assembly comprises a plurality of magnetoresistive storage units formed on the chip, the magnetization direction of a pinning layer of each magnetoresistive storage unit is arranged along the thickness direction of the magnetoresistive storage unit, and at least two magnetoresistive storage units in the plurality of magnetoresistive storage units are connected to form a half-bridge circuit;
wherein, the detection circuitry includes first detection circuitry, first detection circuitry is including locating two respectively around first detection section and the second detection section of magnetoresistive memory cell week side, first detection section produces first induction magnetic field, the second detection section produces second induction magnetic field, flows through first detection section and flow through the helical direction of the electric current of second detection section is reverse setting, so that first induction magnetic field with second induction magnetic field is opposite.
In the technical scheme provided by the invention, the current sensor comprises a detection line used for being conducted with a circuit to be detected of a chip and a sensing assembly used for measuring the current of the circuit to be detected, the sensing assembly comprises a plurality of magnetic resistance storage units formed on the chip, the magnetization direction of a pinning layer of each magnetic resistance storage unit is arranged along the thickness direction of the magnetic resistance storage unit, at least two magnetic resistance storage units in the magnetic resistance storage units are connected to form a half-bridge circuit, the detection line comprises a first detection line, the first detection line comprises a first detection section and a second detection section, a first detection section and a second detection section are respectively arranged around the two magnetic resistance storage units, a first induction magnetic field is generated in the first detection section, a second induction magnetic field is generated in the second detection section, the spiral directions of the currents flowing through the first detection section and the second detection section are reversely arranged, according to the right-hand rule, two induction magnetic fields in opposite directions can be generated in the thickness direction of the two magnetoresistive storage units respectively, the two induction magnetic fields are parallel to the magnetization direction of the pinning layer, and act on the magnetic fields of the free layers of the two magnetoresistive storage units, so that the resistance values of the two magnetoresistive storage units are changed, the current detection can be carried out by using the original detection circuit when the magnetization direction of the pinning layer of the magnetoresistive storage unit is arranged along the thickness direction of the pinning layer, and the problem that the detection circuit of the existing current sensor cannot carry out detection through the resistance power supply when the resistance unit of the sensor is a magnetic tunnel junction with vertical magnetic anisotropy is solved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic diagram of a prior art magnetoresistive sensor;
FIG. 2 is a schematic diagram of a Wheatstone bridge configuration of a magnetoresistive sensor;
FIG. 3 is a diagram illustrating a basic structure of a magnetic tunnel junction and a magnetization direction of a magnetic layer;
FIG. 4 is a schematic perspective view of an embodiment of a current sensor according to the present invention;
FIG. 5 is a schematic perspective view of another embodiment of a current sensor provided in the present invention;
FIG. 6 is a schematic diagram of one embodiment of a current conducting line structure on the magnetoresistive memory cell of FIG. 4;
FIG. 7 is a schematic diagram of another embodiment of a current conducting line structure on the magnetoresistive memory cell of FIG. 4.
The reference numbers illustrate:
| reference numerals | Name (R) | Reference numerals | Name (R) |
| 100 | |
112 | |
| 1 | Detection circuit | 2 | |
| 11 | |
21 | |
| 111 | First detection segment |
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that, if directional indications (such as up, down, left, right, front, and back … …) are involved in the embodiment of the present invention, the directional indications are only used to explain the relative positional relationship between the components, the movement situation, and the like in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indications are changed accordingly.
In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, the meaning of "and/or" appearing throughout includes three juxtapositions, exemplified by "A and/or B" including either A or B or both A and B. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The current detection is a very important link in the chip reliability test, for example, the IDDQ quiescent current test judges whether physical defects such as bridging, open short circuit and the like exist in a circuit by detecting whether the quiescent current or the variation thereof has obvious variation; the IDDT transient current test detects the faults by observing the transient dynamic current drawn by the circuit to be detected, and can detect the circuit faults which can not be detected by the voltage test and the IDDQ test, such as redundant faults, time delay faults and the like. The current detection has two modes of on-chip and off-chip. The on-chip Test uses Built-In-Self-Test (BIST), a Built-In Current Sensor (BICS) is integrated between a Circuit Under Test (CUT) and a power supply, and the Current flowing through the Circuit Under Test is processed and analyzed to obtain the defect information of the Circuit Under Test. And the off-chip test is to place a corresponding current detection template beside the CUT for testing. However, the speed and resolution of off-chip testing are low, and the delay of the testing equipment and the size of the probe also influence the testing effect, so that on-chip testing is a more efficient and reliable method.
Among various built-in current sensors BICS, a current sensor based on Giant Magnetoresistive (GMR) or Tunneling Magnetoresistive (TMR) has great application value due to the advantages of high sensitivity, small volume, low power consumption, compatibility with Complementary Metal-Oxide-Semiconductor (CMOS) technology, and the like. Such a magnetoresistive sensor detects the magnitude of a current by measuring a magnetic field generated by the current. Particularly, in the application of a nonvolatile Random Access Memory (MRAM), a Magnetic Tunnel Junction (MTJ) is a Memory cell for storing "0" or "1" information, and can also be used as a current sensing unit to implement current detection.
Referring to fig. 1, the core structure of the magnetoresistive sensor is a "sandwich" structure formed by two ferromagnetic layers and a spacer layer, wherein one of the ferromagnetic layers is called a free layer, and the magnetic moment direction thereof can freely rotate under the action of an external magnetic field; the other ferromagnetic layer, called the reference layer (pinned layer), has its magnetic moment direction pinned, typically by an adjacent antiferromagnetic layer or synthetic antiferromagnetic structure, to remain stationary for a range of magnetic fields. In a TMR sensor, the spacer layer is an insulating tunneling layer made of MgO or Al2O3, etc., and its basic cell is called a magnetic tunnel junction. In GMR sensors, the spacer layer is made of a heavy metal material such as Cu or Ag, and the basic unit thereof is called a Spin Valve (SV). The arrows shown represent the magnetic moment directions of the pinned and free layers, respectively. The magnetic moment of the pinned layer is relatively fixed under a magnetic field of a certain magnitude, and the magnetic moment of the free layer is relatively free and rotatable with respect to the magnetic moment of the pinned layer and is switched with the change of an external field. The direction of the domain of the pinned layer is relatively difficult to change, while the coercivity of the free layer is generally low, and the direction inversion is likely to occur under the action of an applied magnetic field. The resistance value of the whole structure changes along with the change of the included angle between the magnetization directions of the free layer and the reference layer. If the magnetization directions of the two layers are parallel to each other, in one magnetic layer, electrons of a majority spin subband enter the empty state of the majority spin subband in the other magnetic layer, electrons of a minority spin subband also enter the empty state of the minority spin subband in the other magnetic layer, and the total tunneling current is larger; if the magnetization directions of the two magnetic layers are antiparallel, the situation is just opposite, namely in one magnetic layer, the electrons of the majority spin subband will enter the empty state of the minority spin subband in the other magnetic layer, and the electrons of the minority spin subband will also enter the empty state of the majority spin subband in the other magnetic layer, and the tunneling current of the state is relatively small. Thus, the tunneling conductance changes with the change in the magnetization directions of the two ferromagnetic layers, and the conductance is higher when the magnetization vectors are parallel than when they are antiparallel. When the direction of the magnetic field outside the magnetic domain direction of the pinning layer is consistent, the current passes through the oxide layer from the pinning layer to the tunnel current of the free layer to be the maximum due to the consistency of the magnetic field outside the magnetic domain direction of the free layer, and a low-resistance state is formed at the moment; when the direction of the magnetic field of the pinning layer is different from that of the magnetic field of the free layer, the direction of the magnetic domain of the pinning layer is opposite to that of the magnetic domain of the free layer, and at the moment, current passes through the free layer difficultly, so that the tunneling magnetoresistance is large, and a high-resistance state is formed. The magnetization directions of the two ferromagnetic layers can be changed by applying an external magnetic field, so that the tunneling resistance is changed, and the TMR effect is caused.
In order to improve the temperature stability, the magnetoresistive sensor is usually designed as a Wheatstone Bridge structure, as shown in fig. 2, an insulating layer with a certain thickness is arranged between a current lead and the sensor, and a current to be measured flows through a "U" or "S" lead and flows on the surface of a resistor unit, so that magnetic fields in opposite directions are generated on adjacent resistor units, and a Wheatstone Full Bridge (Full Wheatstone Bridge) sensor is formed. For example, according to the "right hand rule," the magnetic field directions detected by the resistors R1 and R2 are opposite. In the bridge, each resistance unit can be a tunnel junction or a spin valve, or can be an array formed by connecting a plurality of tunnel junctions or spin valves in series and in parallel.
In the above-mentioned built-in current sensor BICS, the magnitude of the magnetic field generated on the sensor by the current to be measured is related to the thickness and width of the current conducting wire and the distance between the current conducting wire and the sensor. Generally, the smaller the width of the current conducting wire and the closer the distance to the sensor, the larger the generated magnetic field, and in order to generate a uniform magnetic field to be measured, the smaller the width of the resistance unit is required to be than the width of the current conducting wire. In the magnetoresistive sensor, in consideration of factors such as noise level reduction and linearity optimization, a resistance unit is usually formed by connecting a plurality of tunnel junctions or spin valves in series and parallel, so that the design of a current lead becomes complicated. In the above-described built-in current sensor, the sensing direction of the magnetoresistive sensor is in its plane. In order to further increase the induction sensitivity, a corresponding annular current lead or a magnetic flux collector structure and the like need to be designed, so that the micro-nano processing difficulty is increased.
With the increasing demands for memory density and reliability, Magnetic random access memories are gradually turning to the use of MTJs with Perpendicular Magnetic Anisotropy (PMA). Referring to fig. 3, in such MTJs, the magnetic moments of the pinned and free layers are oriented perpendicular to the film plane. At this time, if the current continues to be detected by the MTJ, the current lead structure that can generate only the in-plane magnetic field is no longer applicable.
In order to solve the above problems, the present invention provides a current sensor 100, and fig. 4 to 7 show an embodiment of the current sensor 100 according to the present invention.
Referring to fig. 4, the current sensor 100 includes a detection circuit 1 and a sensing component 2, where the detection circuit 1 is used for conducting with a circuit to be detected of a chip; the sensing assembly 2 comprises a plurality of magnetoresistive memory units 21 formed on the chip, the magnetization direction of a pinning layer of each magnetoresistive memory unit 21 is arranged along the thickness direction of the magnetoresistive memory unit, and at least two magnetoresistive memory units 21 in the magnetoresistive memory units 21 are connected to form a half-bridge circuit; wherein, detection circuitry 1 includes first detection circuitry 11, first detection circuitry 11 is including respectively around locating two first detection section 111 and the second detection section 112 of magnetoresistive memory cell 21 week side, first detection section 111 produces first induction magnetic field, second detection section 112 produces second induction magnetic field, flows through first detection section 111 and the spiral direction of flowing through the electric current of second detection section 112 are reverse arrangement, so that first induction magnetic field with second induction magnetic field is opposite.
In the technical solution provided by the present invention, the current sensor 100 includes a sensing line 1 for conducting with a circuit to be detected of a chip, and a sensing assembly 2 for measuring a current of the circuit to be detected, the sensing assembly 2 includes a plurality of magnetoresistive memory cells 21 formed on the chip, a magnetization direction of a pinned layer of each magnetoresistive memory cell 21 is arranged along a thickness direction thereof, at least two magnetoresistive memory cells 21 of the plurality of magnetoresistive memory cells 21 are connected to form a half-bridge circuit, wherein the sensing line 1 includes a first sensing line 11, the first sensing line 11 includes a first sensing segment 111 and a second sensing segment 112, a first sensing magnetic field is generated in the first sensing segment 111, a second sensing magnetic field is generated in the second sensing segment 112 by arranging the first sensing segment 111 and the second sensing segment 112 respectively wound around the two magnetoresistive memory cells 21, the spiral directions of the currents flowing through the first detection section 111 and the second detection section 112 are set in opposite directions, according to the right-hand rule, two induced magnetic fields with opposite directions can be respectively generated in the thickness direction of the two magnetoresistive memory units 21, the magnetic field directions of the two induced magnetic fields are parallel to the magnetization direction of the pinned layer, and the magnetic field action on the free layer of the two magnetoresistive memory units 21 causes the resistance values of the two magnetoresistive memory units 21 to change, so that the current detection can be performed by using the original detection circuit when the magnetization direction of the pinned layer of the magnetoresistive memory unit 21 is set along the thickness direction thereof, and the problem that the detection circuit of the existing current sensor 100 cannot perform detection through the resistor power supply when the resistance unit of the sensor is a magnetic tunnel junction with perpendicular magnetic anisotropy is solved.
Specifically, referring to fig. 4, in order to simplify the wiring of the circuit, in the present embodiment, the first detecting section 111 and the second detecting section 112 are arranged in series, while the direction of the current flow of the series-arranged lines is identical in the first detection segment 111 and the second detection segment 112, in order to reverse the current spiral direction of the first sensing segment 111 and the second sensing segment 112, the detection line 1 further comprises a connection section communicating the first detection section 111 with the second detection section 112, the first sensing section 111 and the second sensing section 112 are respectively disposed at both sides of the connection section, according to the right-hand rule, such that when a current passes through the first detection segment 111 and the second detection segment 112, the generated magnetic fields are opposite in direction, so that one of the two magnetoresistive memory cells 21 assumes a high resistance state and the other assumes a low resistance state, a TMR effect can be produced.
Further, in order to improve the accuracy and sensitivity of the current sensor 100, in another embodiment, the sensing assembly 2 includes four magnetoresistive memory units 21, the four magnetoresistive memory units 21 are connected to form a full bridge circuit, because the directions of the pinned layers of two adjacent resistors in the wheatstone full bridge circuit are reversed, and the full bridge circuit can be regarded as two half bridge structures, the detection circuit 1 includes two first detection circuits 11, so as to have two first detection sections 111 and two second detection sections 112 respectively wound around the four magnetoresistive memory units 21, the two first detection sections 111 generate two first induced magnetic fields, the two second detection sections 112 generate two second induced magnetic fields, the spiral directions of the currents flowing through the two first detection sections 111 and the currents flowing through the two second detection sections 112 are reversed, so that the two first induced magnetic fields are opposite to the two second induced magnetic fields, and thus the directions of the induced magnetic fields generated by each two adjacent sensing segments are opposite, so that the four magnetoresistive memory cells 21 form two high resistance states and two low resistance states.
Specifically, referring to fig. 5, in order to simplify the wiring of the line, in this embodiment, two of the first detection sections 111 and two of the second detection sections 112 are arranged in series, and in order to reverse the spiral direction of the current flowing through the two of the first detection sections 111 and the two of the second detection sections 112, the detection line 1 further includes a connection section for connecting the two of the first detection sections 111 and the two of the second detection sections 112, the two of the first detection sections 111 are arranged on one side of the connection section, the two of the second detection sections 112 are arranged on the other side of the connection section, and according to the right-hand rule, the current flowing through each two adjacent detection sections are arranged in a reverse direction.
Further, each of the magnetoresistive memory units 21 may be a magnetic resistance formed by one magnetic tunnel junction, or a magnetic resistance formed by a plurality of magnetic tunnel junctions, in this embodiment, referring to fig. 6 and fig. 7, each of the magnetoresistive memory units 21 includes a plurality of magnetic tunnel junctions connected in series, or certainly, a plurality of magnetic tunnel junctions connected in parallel, and the series connection or the parallel connection may be selected according to requirements of a measuring range, precision, wiring, and the like. Further, with the size reduction of the magnetic tunnel junction, the radius of the annular current line and the distance between the annular current line and the magnetic tunnel junction can be further reduced, the magnetic field generated by the current to be detected can be further increased, the sensitivity of the current sensor 100 is improved, and the current detection of micro-ampere or even nano-ampere can be realized
Specifically, in the present embodiment, each of the magnetoresistive top electrodes and the detection line 1 are prepared by photolithography and evaporation. The Bottom electrode Layer (Bottom reducing Layer) and the Top electrode Layer (Top reducing Layer) are in direct electrical contact with the associated antiferromagnetic Layer and free Layer. The electrode layers are typically made of a non-magnetic conductive material and can carry a current to an ohmmeter, which is adapted to measure the current (or voltage) known to pass through the entire tunnel junction. Typically, the tunnel barrier layer provides most of the resistance of the device, about 1000 ohms, while the resistance of all conductors is about 10 ohms. The bottom electrode Layer is located above an Insulating Substrate (Insulating Layer), which is wider than the bottom electrode Layer and located above a bottom Substrate (Body Substrate) made of other materials. The material of the base substrate is typically silicon, quartz, pyrex, GaAs, AlTiC or any other material that can be integrated on a wafer. Silicon is the best choice for integrated circuits because of its ease of fabrication.
Specifically, the top electrode of the magnetic tunnel junction and the detection circuit 1 are arranged on the same plane, so that when micro-nano machining is carried out, a current lead and the top electrode of the tunnel junction are directly integrated on the same layer of a layout without using an insulating layer, the process steps are simplified, the distance between the current lead and a unit to be detected is reduced, and the magnetic field to be detected on a sensing unit is improved relative to the existing scheme.
The present invention further provides an electronic device, which includes the current sensor 100, and the specific structure of the current sensor 100 refers to the above embodiments, and since the electronic device adopts all technical solutions of all the above embodiments, the electronic device at least has all beneficial effects brought by all the technical solutions of all the above embodiments, and details are not repeated herein.
Besides being used as the chip built-in current sensor 100 to detect weak current, the device can also realize large-current detection by adjusting parameters such as the width, the radius, the distance between a current lead and a sensing unit and the like, and is used for detecting the current of a power grid or a new energy automobile battery and the like.
The present invention further provides a detection apparatus, which includes the current sensor 100, and the specific structure of the current sensor 100 refers to the above embodiments, and since the detection apparatus employs all technical solutions of all the above embodiments, the detection apparatus at least has all beneficial effects brought by all the technical solutions of all the above embodiments, and details are not repeated herein.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A current sensor, comprising:
the detection circuit is used for being conducted with a circuit to be detected of the chip; and the number of the first and second groups,
the sensing assembly comprises a plurality of magnetoresistive storage units formed on the chip, the magnetization direction of a pinning layer of each magnetoresistive storage unit is arranged along the thickness direction of each magnetoresistive storage unit, and at least two magnetoresistive storage units in the magnetoresistive storage units are connected to form a half-bridge circuit;
wherein, the detection circuitry includes first detection circuitry, first detection circuitry is including locating two respectively the week side of magnetic resistance memory cell first detection section and second detection section, first detection section produces first induction magnetic field, the second detection section produces second induction magnetic field, flows through first detection section and the spiral direction of flowing through the electric current of second detection section are reverse setting, so that first induction magnetic field with second induction magnetic field is opposite.
2. The current sensor of claim 1, wherein the first sensing segment is connected in series with the second sensing segment, the sensing circuit further comprises a connecting segment connecting the first sensing segment with the second sensing segment, and the first sensing segment and the second sensing segment are respectively disposed at two sides of the connecting segment.
3. The current sensor of claim 1, wherein the sensing assembly comprises four magnetoresistive memory cells connected to form a full bridge circuit;
the detection circuit comprises two first detection circuits, two first detection sections and two second detection sections are arranged around the periphery of the magnetic resistance storage unit, two first detection sections generate two first induction magnetic fields and two second induction magnetic fields, the second detection sections generate two second induction magnetic fields and flow through the two first detection sections and the two first induction magnetic fields, the spiral direction of the current of the second detection sections is in reverse arrangement, so that the two first induction magnetic fields are opposite to the two second induction magnetic fields.
4. The current sensor according to claim 3, wherein two of the first detecting sections are connected in series with two of the second detecting sections, the detection circuit further includes a connecting section connecting the two of the first detecting sections and the two of the second detecting sections, the two of the first detecting sections are provided on one side of the connecting section, and the two of the second detecting sections are provided on the other side of the connecting section.
5. The current sensor of claim 1, wherein each magnetoresistive memory cell includes a plurality of magnetic tunnel junctions in series.
6. The current sensor of claim 1, wherein each of the magnetoresistive memory cells includes a plurality of magnetic tunnel junctions connected in parallel.
7. The current sensor of claim 1, wherein each of the magnetoresistive top electrodes and the sensing lines are fabricated by photolithography and evaporation.
8. The current sensor of claim 7, wherein a top electrode of the magnetic tunnel junction is disposed in a same plane as the sensing line.
9. An electronic device, characterized in that it comprises a current sensor according to any one of claims 1 to 8.
10. A testing device comprising a current sensor according to any one of claims 1 to 8.
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| CN202111681559.1A CN114509593A (en) | 2021-12-31 | 2021-12-31 | Current sensor, electronic device, and detection device |
| PCT/CN2022/136364 WO2023124784A1 (en) | 2021-12-31 | 2022-12-02 | Current sensor, electronic device, and measurement apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023124784A1 (en) * | 2021-12-31 | 2023-07-06 | 歌尔微电子股份有限公司 | Current sensor, electronic device, and measurement apparatus |
| CN116953336A (en) * | 2023-09-21 | 2023-10-27 | 北京智芯微电子科技有限公司 | Current sensor chip, manufacturing method and circuit |
| CN117405958A (en) * | 2023-12-14 | 2024-01-16 | 江苏多维科技有限公司 | Current sensor |
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| CN102226836A (en) * | 2011-04-06 | 2011-10-26 | 江苏多维科技有限公司 | Single-chip bridge magnetic field sensor and preparation method thereof |
| CN102419393B (en) * | 2011-12-30 | 2013-09-04 | 江苏多维科技有限公司 | Current sensor |
| CN102590768B (en) * | 2012-03-14 | 2014-04-16 | 江苏多维科技有限公司 | Magneto-resistance magnetic field gradient sensor |
| US10509058B2 (en) * | 2018-01-12 | 2019-12-17 | Allegro Microsystems, Llc | Current sensor using modulation of or change of sensitivity of magnetoresistance elements |
| CN111596239B (en) * | 2020-06-15 | 2021-07-20 | 北京航空航天大学 | Magnetic sensor with single-chip integrated three-axis tunneling magnetoresistance and preparation method thereof |
| CN114509593A (en) * | 2021-12-31 | 2022-05-17 | 歌尔微电子股份有限公司 | Current sensor, electronic device, and detection device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023124784A1 (en) * | 2021-12-31 | 2023-07-06 | 歌尔微电子股份有限公司 | Current sensor, electronic device, and measurement apparatus |
| CN116953336A (en) * | 2023-09-21 | 2023-10-27 | 北京智芯微电子科技有限公司 | Current sensor chip, manufacturing method and circuit |
| CN116953336B (en) * | 2023-09-21 | 2024-01-19 | 北京智芯微电子科技有限公司 | Current sensor chip, manufacturing method and circuit |
| CN117405958A (en) * | 2023-12-14 | 2024-01-16 | 江苏多维科技有限公司 | Current sensor |
| CN117405958B (en) * | 2023-12-14 | 2024-02-13 | 江苏多维科技有限公司 | current sensor |
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