CN103645448A - Improved Wheatstone half-bridge circuit and sensor - Google Patents
Improved Wheatstone half-bridge circuit and sensor Download PDFInfo
- Publication number
- CN103645448A CN103645448A CN201310708848.5A CN201310708848A CN103645448A CN 103645448 A CN103645448 A CN 103645448A CN 201310708848 A CN201310708848 A CN 201310708848A CN 103645448 A CN103645448 A CN 103645448A
- Authority
- CN
- China
- Prior art keywords
- resistance
- magnetic
- bridge
- sensor
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Measuring Magnetic Variables (AREA)
Abstract
The invention discloses an improved Wheatstone half-bridge circuit and a sensor. The circuit comprises two half-bridge resistor units. One end of one half-bridge resistor unit and one end of the other half-bridge resistor unit are electrically connected through a first connection conductor, and a second connection conductor and a third connection conductor are arranged at the other ends of the two half-bridge resistor units. The circuit is characterized in that at least one half-bridge resistor unit is formed by connecting at least two resistor branches in parallel. A quadratic item generated by resistors connected in parallel effectively weakens noise response caused by resistance asymmetry of two half-bridge resistors. When a biasing field is allowed to be used, the biasing field is applied in the induction direction to greatly improve signal intensity to further improve the signal to noise ratio. Therefore, the quadratic item generated by the resistors connected in parallel can restrain environment noise interference to the largest extent.
Description
Technical field
The present invention relates to a kind of sensing circuit, be specifically related to a kind of improvement of favour stone half-bridge circuit, and the sensor that adopts this circuit, for feeble signal field is accurate, detect.
Background technology
Sensor technology is widely used in the every field such as traffic, space flight and aviation, finance, industry, biomedicine and smart mobile phone, panel computer, digital camera, interactive game.
Along with developing rapidly of sensor application field, in the urgent need to improving sensor, detect the ability of feeble signal field, the stability of detection and reduce costs, and suppress the external interference such as noise, be to improve the key factor of above-mentioned performance index.
Wheatstone bridge is a kind of common sensor circuit, and detection signal is exerted one's influence to resistance, such as adopting mistor, voltage dependent resistor (VDR), thermistor etc. according to detected object, changes the resistance in electric bridge, with this detection signal.Conventionally use the method that suppresses noise for adopting traditional Hui Sitong half-bridge or full-bridge circuit, yet traditional wheatstone bridge circuits require the resistance of each resistance of electric bridge in full accord.But in reality, once due to mass production processes repeatability problem and when having bias-field to cause resistance incomplete same, it suppresses noise ability and will have a greatly reduced quality.Industry member large-scale production level just at present, is less than +/-1% and all has certain challenge even if will very realize the asymmetry of resistance.Therefore, toward contact, must go filtering to there is the noise of characteristic frequency by means of various signal filter circuits.
Fig. 1 has illustrated a kind of sensor schematic diagram that uses traditional Hui Sitong half-bridge circuit.As shown in Figure 1, on substrate 1, by two resistance and wire, formed Hui Sitong half-bridge circuit, wherein, the resistance of a resistance 5 is R1, and the resistance of another resistance 4 is R2.Between two resistance, through the first wire 6, form and be electrically connected to, the other end of resistance 5 is provided with the second wire 2, and the other end of resistance 4 is provided with privates 3.
The resistance of two resistance is respectively,
R1=R0-Rw+R1s+R1n (1)
R2=R0+Rw+R2s+R2n (2)
When detecting local signal field, the noise field gradient coming from the outside is much smaller than detected signal field gradient.When resistance R 1 and R2 spacing much smaller than noise field change apart from time, can approximate expression noise resistance be R1n=R2n=Rn.
When half-bridge circuit is applied to bias voltage Vin, output voltage V out is
Vout=Vin×R2/(R1+R2)
= 0.5Vin×[1+(Rw-(R1s- R2s)/2)/[R0+(R1s+ R2s)/2+Rn] (3)
When no signal is inputted, the output voltage that noise causes changes Vn and is
Vn=0.5Vin×[1+(Rw/R0)/(1+(Rn/R0)] (4)
When having bias-field, the output voltage that noise causes changes Vn and is
Vn=0.5Vin×[1+(Rwb/Rb)/(1+(Rn/Rb)] (5)
Wherein, biasing resistor Rb=R0+dRb, dRb is the variation of the resistance value that causes of biasing place; Rwb=Rw+dRwb, dRwb be R1 and R2 under bias-field resistance value difference 1/2nd.In constant bias after the match, Rwb/Rb=Rw/R0; Under gradient bias-field, common Rwb/Rb>Rw/R0.
Obviously, the asymmetry Rw of two half-bridge resistances has caused the noise response in output signal, reduces this asymmetry (Rw/R0) and contributes to suppress noise.Yet, reduce the restriction that resistance inconsistency is subject to production technology and assemble ability.
Apply bias magnetic field and can encourage magnetic signal and significantly improve signal intensity, be conducive to improve signal to noise ratio (S/N ratio).But non-constant gradient bias magnetic field can increase resistance asymmetry (Rw/R0).In addition,, although can adopt large bias-field to be conducive to reduce asymmetry by (Rw/Rb), bias-field size is subject to can not excessive biasing and cause the restriction that magnetic resistance is saturated.
Therefore the single order item [(Rw/R0)/(1+ (Rn/Rb)] of, depending merely on traditional half-bridge comes the effect of attenuate acoustic noise limited.
Fig. 2 has illustrated noise on an impact of using the Magnetic Sensor output signal of traditional Hui Sitong half-bridge circuit.It is set to, magnetic resistance is the tunnel magnetoresistive of reluctivity 200%, the magnetic-field-sensitive direction of two tunnel magnetoresistives is identical, the asymmetry of its null field resistance is +/-1%, without additional bias-field, a constant some signal Magnetic Field Source is closely first passed through R2 through R1 again by sensor top, and the maximum resistance change that signal magnetic field produces is 0.002% of null field resistance, and with the magnetic field producing by trigonometric function current lead, comes simulated environment noise to disturb above half-bridge circuit.
As seen from Figure 2, under the noise with signal formed objects, output signal can demonstrate the fluctuation that noise causes, and when noise is signal 5 times time, the waveform that recognize and judge output signal is suitable difficulty.
Summary of the invention
Goal of the invention of the present invention is to provide a kind of remodeling Hui Sitong half-bridge circuit, reduces the not quite identical impact causing of resistance value in half-bridge, improves detection sensitivity; Another goal of the invention of the present invention is to provide the sensor of this remodeling of application Hui Sitong half-bridge circuit.
To achieve the above object of the invention, the technical solution used in the present invention is: a kind of remodeling Hui Sitong half-bridge circuit, comprise two half-bridge resistance units, one end first bonding conductor of two half-bridge resistance units is electrically connected to, the other end of two half-bridge resistance units is respectively equipped with the second bonding conductor and the 3rd bonding conductor, and wherein at least one half-bridge resistance unit consists of at least two resistance branch parallel connections.
In technique scheme, the resistance of two half-bridge resistance units should equate in theory, but in actual fabrication, certainly exist deviation, as described in the background art, the resistance asymmetry of two half-bridge resistance units is larger in the definition of resistance asymmetry, and the impact of noise is larger.Adopt after resistance branch formation in parallel half-bridge resistance unit, can produce quadratic component, by the asymmetry item (Rw/R0) to much smaller than 1, press quadratic power decay, effectively suppress noise response.
Preferred technical scheme, in two half-bridge resistance units, a half-bridge resistance unit consists of a resistance branch, and another half-bridge resistance unit consists of two resistance branch parallel connections, and the other end of these two resistance branch is electrically connected to by the second bonding conductor.
In technique scheme, each resistance branch is a resistance or is in series or in parallel to form by a plurality of resistance.
A sensor, is provided with above-mentioned remodeling Hui Sitong half-bridge circuit, and described two half-bridge resistance units sensitive resistance that the value of having a resistance changes by responding to detected signal forms.Can use separately above-mentioned remodeling Hui Sitong half-bridge circuit, also can form Hui Sitong full-bridge circuit by remodeling Hui Sitong half-bridge circuit.
When as Magnetic Sensor, described sensitive resistance is magnetic resistance, and the magnetic-field-sensitive direction of each magnetic resistance is identical or arrange on the contrary.Described magnetic resistance can be tunnel magnetoresistive, giant magnetoresistance, anisotropic magnetoresistive, Hall magnetic resistance.
Further technical scheme, is provided with bias magnetic field, or the on the contrary setting identical with bias magnetic field direction of the magnetic-field-sensitive direction of described magnetic resistance.
Preferred technical scheme, described bias magnetic field is gradient fields, and the magnetic-field-sensitive direction of magnetic resistance is identical and be disposed in offset from zero bias magnetic field and the less position of bias magnetic field gradient, and not to be biased magnetic field saturated for magnetic resistance simultaneously.
In technique scheme, described bias magnetic field adopts the South Pole-arctic-South Pole or the combination of the arctic-South Pole-arctic, and magnetic resistance is biased in the position that between the South Pole and the arctic, bias magnetic field gradient is less and magnetic resistance increases with bias magnetic field.
Bias magnetic field, can be implemented by the combination of single or multiple permanent magnets or coil magnet, can also at hard magnetic bias film or the loop construction of chip surface, be implemented by produced by micro processing.
When using gradient bias magnetic field situation, the output waveform that Hard Magnetic and soft magnetism signal detected has obvious different characteristic.
Because technique scheme is used, the present invention compared with prior art has following advantages:
1, the present invention wherein at least one half-bridge resistance unit by resistance branch parallel connection, formed, the quadratic component producing due to parallel resistance far surpasses to weakening the effect of resistance inconsistency the first power item that traditional circuit produces, therefore, remodeling Hui Sitong half-bridge circuit provided by the invention and sensor can more effectively suppress noise response;
While 2, adopting the present invention to prepare Magnetic Sensor, thereby bias magnetic field is set, can significantly improve signal intensity raising signal to noise ratio (S/N ratio), the quadratic component producing in conjunction with parallel resistance, can suppress noise response to greatest extent;
3, due to above-mentioned extraordinary inhibition noise ability, can avoid using noise filter circuit, and can relax the requirement to manufacturing process tolerance and build-up tolerance, be conducive to improve yield rate and reduce costs;
4, adopting central magnetic field is zero and during the contrary bias magnetic field of left and right magnetic direction, can clearly distinguish soft magnetism and the Hard Magnetic feature of magnetic signal.
Accompanying drawing explanation
Fig. 1 is the sensor construction schematic diagram that uses Hui Sitong half-bridge circuit in prior art;
Fig. 2 adopts the circuit of Fig. 1 as Magnetic Sensor signal output map under noise when without bias magnetic field;
Fig. 3 is the sensor construction schematic diagram of the embodiment of the present invention one;
Fig. 4 be in embodiment mono-, adopt Fig. 3 structure as Magnetic Sensor the signal output map under noise;
Fig. 5 is the comparison diagram that uses the ratio of the signal under the noise difference with sensor shown in Fig. 1 of the embodiment of the present invention one Magnetic Sensor;
Fig. 6 is the sensor construction schematic diagram of the embodiment of the present invention two;
Fig. 7 is the sensor construction schematic diagram of the embodiment of the present invention three;
Fig. 8 is the magnetic sensor arrangement schematic diagram of the embodiment of the present invention four;
Fig. 9 is the output waveform of Magnetic Sensor detected Hard Magnetic signal under noise of the embodiment of the present invention four;
Figure 10 is the output waveform of the Magnetic Sensor detected soft magnetism signal under noise described in the embodiment of the present invention four;
Figure 11 is the comparison diagram of signal to noise ratio (S/N ratio) difference between the Magnetic Sensor of the embodiment of the present invention one and embodiment tetra-and the Magnetic Sensor that adopts traditional Hui Sitong half-bridge circuit;
Figure 12 is the magnetic sensor arrangement schematic diagram of the embodiment of the present invention five;
Figure 13 is the output waveform of Magnetic Sensor detected Hard Magnetic signal under noise of the embodiment of the present invention five;
Figure 14 is the output waveform of the Magnetic Sensor detected soft magnetism signal under noise described in the embodiment of the present invention five;
Figure 15 is the magnetic sensor arrangement schematic diagram of the embodiment of the present invention six;
Figure 16 is the output waveform of Magnetic Sensor detected Hard Magnetic signal under noise of the embodiment of the present invention six;
Figure 17 is the output waveform of the Magnetic Sensor detected soft magnetism signal under noise described in the embodiment of the present invention six.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described:
Embodiment mono-: a kind of remodeling Hui Sitong half-bridge circuit, comprise two half-bridge resistance units, one end first bonding conductor 6 of two half-bridge resistance units is electrically connected to, one of them half-bridge resistance unit consists of two resistance branch parallel connections, in each resistance branch, be provided with a resistance 5, the other end of this half-bridge resistance unit is provided with the second bonding conductor 2, two resistance branch connect and compose parallel connection by the second bonding conductor 2, another half-bridge resistance unit forms single resistance branch by a resistance 4, the other end of this half-bridge resistance unit is provided with the 3rd bonding conductor 3, and two parallel resistance branch roads are with respect to the symmetrical setting of half-bridge resistance unit of single resistance branch.
Shown in accompanying drawing 3, for adopting the magnetic sensor chip of above-mentioned remodeling Hui Sitong half-bridge circuit, comprise substrate 1, resistance and conductor are arranged in substrate 1.Wherein, resistance 4 and resistance 5 are magnetic resistance, two magnetic resistance have composed in parallel a half-bridge resistance unit of Hui Sitong half-bridge circuit, and another magnetic resistance has formed another half-bridge resistance unit of Hui Sitong half-bridge circuit, two magnetic resistance in parallel are symmetrically distributed in the both sides of single magnetic resistance along its magnetic-field-sensitive direction.The second bonding conductor 2, the 3rd bonding conductor 3, the first bonding conductor 6 are arranged at the two ends of above-mentioned magnetic-field-sensitive resistance, are respectively used to connect biased electrical pressure side, earth terminal and the signal output part of conducting channel.
Wherein, magnetic resistance can be tunnel magnetoresistive, giant magnetoresistance, anisotropic magnetoresistive, Hall magnetic resistance.
With reference to Fig. 3, the resistance of two magnetic resistance in parallel is respectively:
R11=R0-Rw+R11s+R11n (6)
R12=R0+Rw+R12s+R12n (7)
The resistance of another magnetic resistance is
R2=0.5(R0+R2s+R2n) (8)
Signal resistance R11s, R12, and R2s is respectively detected magnetic signal to two magnetic resistance R11 in parallel, R12, and the variation of the resistance value of magnetic resistance R2 generation; Noise resistance R11n, R12n, and R2n is respectively outside noise and disturbs two magnetic resistance R11 in parallel, R12, and the variation of the resistance value that produces of magnetic resistance R2, can be approximately R11n=R12n=R2n=Rn.
The resistance of parallel resistance is
R1=0.5(R0+R1sm+Rn)(1-((Rw-R1sd)/(R0+R1sm+R1n))^2) (9)
Wherein, R1sm=(R11s+R12s)/2, R1sd=(R11s-R12s)/2;
The output voltage of favour stone half-bridge is
Vout=0.5Vin/(1-0.5((Rw-Rs12d)/(R0+Rs12m+Rn))^2) (10)
When no signal, the output voltage that noise causes changes Vn and is
Vn=0.5Vin/[1-0.5((Rw/R0)/(1+(Rn/R0))^2] (11)
Compare with the single order item (seeing formula 4) of traditional sensors, ((Rw/R0)/(1+ (Rn/R0)) ^2 more effectively attenuate acoustic noise disturbs the second order quadratic term that parallel resistance of the present invention produces.
Fig. 4 is the impact of noise on Magnetic Sensor output signal in the present embodiment.It is set to, magnetic resistance is the tunnel magnetoresistive of reluctivity 200%, the magnetic-field-sensitive direction of two tunnel magnetoresistives is identical, the asymmetry of two magnetic resistance null field resistance in parallel is +/-1%, without additional bias-field, a constant some signal Magnetic Field Source is closely first passed through R2 through R1 again by sensor top, and the maximum resistance change that signal magnetic field produces is 0.002% of null field resistance, and half-bridge circuit top comes simulated environment noise to disturb with the magnetic field producing by trigonometric function current lead.
Visible, even if at 50 times under the noise of signal, the present invention's Magnetic Sensor used still can guarantee good output waveform and signal to noise ratio (S/N ratio), it suppresses noise ability and is much better than traditional Magnetic Sensor.
Fig. 5 is Magnetic Sensor and the comparison diagram that uses the traditional half-bridge Magnetic Sensor output signal-noise ratio under similarity condition shown in Fig. 1 in the present embodiment.
Under equal noise, the signal to noise ratio (S/N ratio) of Magnetic Sensor of the present invention is far above traditional half-bridge Magnetic Sensor.Even if resistance asymmetry differs from one times than traditional half-bridge Magnetic Sensor, the signal to noise ratio (S/N ratio) of Magnetic Sensor of the present invention still obviously exceeds traditional half-bridge Magnetic Sensor.
Therefore, Magnetic Sensor of the present invention can be tolerated larger resistance asymmetry.
Embodiment bis-
Fig. 6 is the another kind design of magnetic sensing chip of the present invention.Two magnetic resistance in parallel itself are comprised of the magnetic resistance of two or more parallel connections.
Embodiment tri-
Fig. 7 is the another kind design of magnetic sensing chip of the present invention.Magnetic resistance itself is comprised of the magnetic resistance of a plurality of series connection.
Embodiment tetra-
As shown in Figure 8, on the magnetic sensor chip basis of embodiment mono-, increase and apply gradient bias magnetic field, form the Magnetic Sensor with bias magnetic field.Bias magnet 7 in assembling module 8 and 9 is implemented magnetic field biasing in a side that departs from zero offset field, center to the magnetic resistance of described formation Hui Sitong half-bridge, and offset position is in the middle of the magnetic pole of two, north and south, and magnetic field gradient approaches minimum.Now, the output voltage of Hui Sitong half-bridge is
Vout=0.5Vin/(1-0.5((Rwb/Rb-R12sd/Rb)/(1+R12sm/Rb+Rn/Rb))^2) (12)
Wherein, R12sm=(R1s+R2s)/2, R12sd=(R1s-R2s)/2;
When no signal, the output voltage that noise causes changes Vn and is
Vn=0.5Vin/[1-0.5((Rwb/Rb)/(1+(Rn/Rb))^2] (13)
Although bias magnetic field may cause resistance asymmetry (Rwb/Rb) to increase, also cause signal terms (R12sd/Rb) and significantly increase (R12sm/Rb).When the increase ratio of resistance asymmetry is less than the increase ratio of signal terms, the raising of signal to noise ratio (S/N ratio) will be benefited from.
Fig. 9 is the output waveform of Magnetic Sensor detected Hard Magnetic signal under noise described in embodiment tetra-.
This Magnetic Sensor is specifically set to, magnetic-field-sensitive resistance adopts the tunnel magnetoresistive thin film that reluctivity is 200%, inconsistent resistance R w is the +/-4% of null field resistance R 0, biasing 40% is that biasing resistor Rb is 140% of null field resistance R 0, a Hard Magnetic signal that can not be biased magnetic field magnetisation reversion passes through Magnetic Sensor by Magnetic Sensor top along bias magnetic field direction, and the maximum resistance change that this Hard Magnetic signal magnetic field produces is 0.2% of null field resistance R 0.
As seen from Figure 9, when noise causes null field resistance variations 2%, Magnetic Sensor provided by the invention still can keep good Hard Magnetic signal output waveform.Because bias magnetic field cannot this Hard Magnetic signal of magnetization inversion, in Fig. 9, two signal peaks in left and right are suitable.
Figure 10 is the output waveform of Magnetic Sensor detected soft magnetism signal under noise described in embodiment tetra-.It arranges with upper identical.
Figure 10 shows, when noise causes null field resistance variations 2%, Magnetic Sensor provided by the invention still can keep good soft magnetism signal output waveform.Because bias magnetic field can this soft magnetism signal of magnetization inversion, and soft magnetism signal changes with the size of bias magnetic field, and in Fig. 9, two signal peaks in left and right differ obvious.
Comparison diagram 9 can find out with Figure 10, and Magnetic Sensor provided by the invention can be picked out by signal peak characteristic difference soft magnetism or the Hard Magnetic attribute of detected magnetic signal.
Figure 11 is the contrast of Magnetic Sensor described in the employing embodiment of the present invention four and the signal to noise ratio (S/N ratio) of conventional half bridge topology Magnetic Sensor when having or not bias magnetic field.
Visible, no matter whether to setover, the signal to noise ratio (S/N ratio) of Magnetic Sensor of the present invention is all far above conventional half bridge topology Magnetic Sensor.Under the condition allowing, apply bias magnetic field, can improve to greatest extent the anti-noise jamming ability of Magnetic Sensor of the present invention.
Embodiment five
As shown in figure 12, two parallel resistance branch roads are distributed in one side of the half-bridge resistance unit of single resistance branch, two remodeling half-bridge circuits are symmetrically distributed in both sides, bias magnetic field center and have formed the intelligent stone full-bridge circuit of retrofiting, its magnetic-field-sensitive opposite direction, the magnetic-field-sensitive direction of each remodeling half-bridge circuit magnetic resistance is identical with the lateral offset magnetic direction of position, and other setting is identical with embodiment tetra-.Can also only use single half-bridge circuit.
Figure 13 is the Magnetic Sensor half-bridge of detected Hard Magnetic signal and output waveform of full-bridge circuit under noise described in embodiment five.
As seen from Figure 13, full-bridge circuit has lower noise response or higher noise resisting ability than half-bridge circuit.Meanwhile, because bias magnetic field cannot magnetization inversion Hard Magnetic signal, the output waveform that is positioned at both sides, bias magnet center has identical amplitude direction.
Figure 14 is the Magnetic Sensor half-bridge of detected soft magnetism signal and output waveform of full-bridge circuit under noise described in embodiment five.
Because soft magnetism signal can be biased magnetic field magnetisation reversion, its output waveform that is positioned at magnetic blow out centre both sides has positive and negative contrary amplitude.
Embodiment six
As shown in figure 15, two parallel resistance branch roads are distributed in one side of the half-bridge resistance unit of single resistance branch, the full-bridge circuit being comprised of two above-mentioned half-bridge circuits is arranged on a side that is positioned at bias magnet center, and the magnetic-field-sensitive direction of two above-mentioned half-bridge circuits is consistent and identical with the lateral offset magnetic direction of present position.Other setting is identical with embodiment tetra-.
Figure 16 and Figure 17 are respectively Magnetic Sensor detected Hard Magnetic and the half-bridge of soft magnetism signal and output waveform of full-bridge circuit under noise described in embodiment six.
Claims (9)
1. a remodeling Hui Sitong half-bridge circuit, comprise two half-bridge resistance units, one end first bonding conductor of two half-bridge resistance units is electrically connected to, the other end of two half-bridge resistance units is respectively equipped with the second bonding conductor and the 3rd bonding conductor, it is characterized in that: wherein at least one half-bridge resistance unit consists of at least two resistance branch parallel connections, the resistance asymmetry of two half-bridge resistance units is not more than ± and 5%.
2. remodeling Hui Sitong half-bridge circuit according to claim 1, it is characterized in that: in two half-bridge resistance units, a half-bridge resistance unit consists of a resistance branch, another half-bridge resistance unit consists of two resistance branch parallel connections, and the other end of these two resistance branch is electrically connected to by the second bonding conductor.
3. remodeling Hui Sitong half-bridge circuit according to claim 1 and 2, is characterized in that: each resistance branch is a resistance or is in series or in parallel to form by a plurality of resistance.
4. a sensor, is characterized in that: be provided with the remodeling Hui Sitong half-bridge circuit described in arbitrary claim in claim 1 to 4, described two half-bridge resistance units sensitive resistance that the value of having a resistance changes by responding to detected signal forms.
5. sensor according to claim 4, is characterized in that: described sensitive resistance is magnetic resistance, and the magnetic-field-sensitive direction of each magnetic resistance is identical or arrange on the contrary, forms Magnetic Sensor.
6. sensor according to claim 5, is characterized in that: described magnetic resistance is selected from tunnel magnetoresistive, giant magnetoresistance, anisotropic magnetoresistive or Hall magnetic resistance.
7. according to the sensor described in claim 5 or 6, it is characterized in that: be provided with bias magnetic field, the magnetic-field-sensitive direction of described magnetic resistance is identical with bias magnetic field direction or arrange on the contrary, forms the Magnetic Sensor with bias magnetic field.
8. sensor according to claim 7, is characterized in that: described bias magnetic field is gradient fields, and the magnetic-field-sensitive direction of magnetic resistance is identical and be disposed in offset from zero bias magnetic field and the less position of bias magnetic field gradient, and not to be biased magnetic field saturated for magnetic resistance simultaneously.
9. sensor according to claim 8, it is characterized in that: described bias magnetic field adopts the South Pole-arctic-South Pole or the combination of the arctic-South Pole-arctic, and magnetic resistance is biased in the position that between the South Pole and the arctic, bias magnetic field gradient is less and magnetic resistance increases with bias magnetic field.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310708848.5A CN103645448A (en) | 2013-12-20 | 2013-12-20 | Improved Wheatstone half-bridge circuit and sensor |
| CN201410164791.1A CN103901365B (en) | 2013-12-20 | 2014-04-23 | Modified Wheatstone half-bridge circuit and sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310708848.5A CN103645448A (en) | 2013-12-20 | 2013-12-20 | Improved Wheatstone half-bridge circuit and sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103645448A true CN103645448A (en) | 2014-03-19 |
Family
ID=50250698
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310708848.5A Pending CN103645448A (en) | 2013-12-20 | 2013-12-20 | Improved Wheatstone half-bridge circuit and sensor |
| CN201410164791.1A Active CN103901365B (en) | 2013-12-20 | 2014-04-23 | Modified Wheatstone half-bridge circuit and sensor |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410164791.1A Active CN103901365B (en) | 2013-12-20 | 2014-04-23 | Modified Wheatstone half-bridge circuit and sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN103645448A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108983125A (en) * | 2017-06-01 | 2018-12-11 | 深迪半导体(上海)有限公司 | A kind of magnetoresistive sensor |
| CN110657828A (en) * | 2018-06-29 | 2020-01-07 | 英飞凌科技股份有限公司 | Stray field suppression in magnetic sensor wheatstone bridge |
| CN110869788A (en) * | 2017-06-02 | 2020-03-06 | 法国原子能及替代能源委员会 | System and method for suppressing low frequency noise of a magnetoresistive sensor |
| CN112577531A (en) * | 2020-11-05 | 2021-03-30 | 北京麦格纳材科技有限公司 | Anti-electromagnetic interference structure of magnetic sensor chip and preparation method thereof |
| CN112857406A (en) * | 2021-01-08 | 2021-05-28 | 重庆开谨科技有限公司 | High-voltage excited Wheatstone bridge measuring method |
| WO2023093471A1 (en) * | 2021-11-24 | 2023-06-01 | 华为技术有限公司 | Fluid detection apparatus, microphone, and electronic device |
| CN117289186A (en) * | 2023-11-24 | 2023-12-26 | 江苏多维科技有限公司 | Magnetic grid sensor |
| CN117572303A (en) * | 2022-08-08 | 2024-02-20 | 苏州纳芯微电子股份有限公司 | Magnetic sensor, current detection device and current detection method |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10782154B2 (en) * | 2017-06-26 | 2020-09-22 | Texas Instruments Incorporated | Tilted segmented anisotropic magneto-resistive angular sensor |
| CN108469594B (en) * | 2018-03-13 | 2023-07-07 | 武汉嘉晨电子技术有限公司 | High-precision closed-loop gradient magnetic resistance sensor |
| CN115754848B (en) * | 2022-11-17 | 2024-04-02 | 江苏多维科技有限公司 | Magnetic sensor |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6756782B2 (en) * | 2001-06-01 | 2004-06-29 | Koninklijke Philips Electronics N.V. | Magnetic field measuring sensor having a shunt resistor and method of regulating the sensor |
| DE10342260B4 (en) * | 2003-09-11 | 2014-11-20 | Meas Deutschland Gmbh | Magnetoresistive sensor in the form of a half or full bridge circuit |
| JP5170679B2 (en) * | 2008-01-29 | 2013-03-27 | 日立金属株式会社 | Magnetic sensor and rotation angle detection device |
| JP2011103336A (en) * | 2009-11-10 | 2011-05-26 | Denso Corp | Magnetoresistive element and sensor using the same |
| CN202013413U (en) * | 2011-04-06 | 2011-10-19 | 江苏多维科技有限公司 | Single chip bridge type magnetic field sensor |
| CN102226836A (en) * | 2011-04-06 | 2011-10-26 | 江苏多维科技有限公司 | Single-chip bridge magnetic field sensor and preparation method thereof |
| CN102809665B (en) * | 2012-06-04 | 2016-08-03 | 江苏多维科技有限公司 | A kind of magnetic resistance gear sensor |
| CN102692242B (en) * | 2012-06-20 | 2015-02-25 | 宁波希磁电子科技有限公司 | Linear thin-film magneto-resistive sensor equipped with magnetism gathering layer |
| CN203894396U (en) * | 2013-12-20 | 2014-10-22 | 叶友忠 | Remodeled Wheatstone half-bridge circuit and sensor |
-
2013
- 2013-12-20 CN CN201310708848.5A patent/CN103645448A/en active Pending
-
2014
- 2014-04-23 CN CN201410164791.1A patent/CN103901365B/en active Active
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108983125A (en) * | 2017-06-01 | 2018-12-11 | 深迪半导体(上海)有限公司 | A kind of magnetoresistive sensor |
| CN110869788A (en) * | 2017-06-02 | 2020-03-06 | 法国原子能及替代能源委员会 | System and method for suppressing low frequency noise of a magnetoresistive sensor |
| CN110869788B (en) * | 2017-06-02 | 2022-08-23 | 法国原子能及替代能源委员会 | System and method for suppressing low frequency noise of a magnetoresistive sensor |
| CN110657828A (en) * | 2018-06-29 | 2020-01-07 | 英飞凌科技股份有限公司 | Stray field suppression in magnetic sensor wheatstone bridge |
| CN112577531A (en) * | 2020-11-05 | 2021-03-30 | 北京麦格纳材科技有限公司 | Anti-electromagnetic interference structure of magnetic sensor chip and preparation method thereof |
| CN112857406A (en) * | 2021-01-08 | 2021-05-28 | 重庆开谨科技有限公司 | High-voltage excited Wheatstone bridge measuring method |
| CN112857406B (en) * | 2021-01-08 | 2023-05-23 | 重庆开谨科技有限公司 | High-voltage excitation Wheatstone bridge measurement method |
| WO2023093471A1 (en) * | 2021-11-24 | 2023-06-01 | 华为技术有限公司 | Fluid detection apparatus, microphone, and electronic device |
| CN117572303A (en) * | 2022-08-08 | 2024-02-20 | 苏州纳芯微电子股份有限公司 | Magnetic sensor, current detection device and current detection method |
| CN117289186A (en) * | 2023-11-24 | 2023-12-26 | 江苏多维科技有限公司 | Magnetic grid sensor |
| CN117289186B (en) * | 2023-11-24 | 2024-01-26 | 江苏多维科技有限公司 | Magnetic grid sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103901365B (en) | 2017-04-12 |
| CN103901365A (en) | 2014-07-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103645448A (en) | Improved Wheatstone half-bridge circuit and sensor | |
| EP2801834B1 (en) | Current sensor | |
| KR101826188B1 (en) | Multicomponent magnetic field sensor | |
| CN105785290B (en) | Magnetic field sensor | |
| CN105988092B (en) | Magnetic Sensor | |
| CN102298126B (en) | Independent packaged bridge-type magnetic-field sensor | |
| EP2330432A1 (en) | Magnetic field sensor | |
| CN104597418B (en) | Detector for magnetic field | |
| US8941378B2 (en) | Magnetic sensor | |
| JP2018004618A (en) | Magnetic sensor | |
| CN106154189A (en) | Tunneling magnetoresistance device for magnetic field sensing | |
| JPWO2014181382A1 (en) | Magnetic current sensor and current measuring method | |
| CN207007092U (en) | A kind of magneto-resistor linear position sensor | |
| CN102901858B (en) | A kind of current sensor | |
| US11243275B2 (en) | Magnetic field sensing device | |
| CN203894396U (en) | Remodeled Wheatstone half-bridge circuit and sensor | |
| CN210665858U (en) | Large-dynamic-range magnetic sensor assembly | |
| US11009569B2 (en) | Magnetic field sensing device | |
| US10884029B2 (en) | Magnetic sensor and electric current sensor including same | |
| CN111465868A (en) | Magnetoresistive magnetic field sensor bridge with compensation for cross-axis effects | |
| JP2012088225A (en) | Magnetic detector | |
| JPWO2017077871A1 (en) | Magnetic sensor | |
| JP6222897B2 (en) | Multi-axis magnetic sensor and manufacturing method thereof | |
| CN103791922A (en) | Magnetic sensor chip and manufacturing method thereof | |
| CN117871923A (en) | Parallel magnetic current sensor capable of eliminating influence of external interference magnetic field |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140319 |