CN113030804B - Sensor and electronic device - Google Patents
Sensor and electronic device Download PDFInfo
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- CN113030804B CN113030804B CN202110227552.6A CN202110227552A CN113030804B CN 113030804 B CN113030804 B CN 113030804B CN 202110227552 A CN202110227552 A CN 202110227552A CN 113030804 B CN113030804 B CN 113030804B
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- 230000005415 magnetization Effects 0.000 claims abstract description 68
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- 238000001514 detection method Methods 0.000 abstract description 8
- 230000035945 sensitivity Effects 0.000 abstract description 4
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- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
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- 210000001624 hip Anatomy 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
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- 229910000676 Si alloy Inorganic materials 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0011—Arrangements or instruments for measuring magnetic variables comprising means, e.g. flux concentrators, flux guides, for guiding or concentrating the magnetic flux, e.g. to the magnetic sensor
Abstract
The invention discloses a sensor and an electronic device, wherein the sensor comprises: a substrate; the first sensing unit detects a magnetic field in the direction of a first sensing shaft, and comprises two first magnetic resistance modules and two second magnetic resistance modules which are arranged on a substrate, and the first magnetic resistance modules and the second magnetic resistance modules are connected to form a full-bridge circuit; defining an included angle alpha between the magnetization direction of a pinning layer of a first magnetoresistive module and the positive direction of a first sensing axis, defining an included angle beta between the magnetization direction of a pinning layer of a second magnetoresistive module and the positive direction of the first sensing axis, wherein alpha and beta are complementary angles; and the magnetic flux collectors are arranged on the substrate, a magnetic gap is formed between every two adjacent magnetic flux collectors, and each first reluctance module and each second reluctance module are respectively positioned in one magnetic gap. The technical scheme of the invention can improve the detection sensitivity of the sensor.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to a sensor and an electronic device using the sensor.
Background
Along with the development of science and technology, the requirement on the sensor in the field of measurement is higher and higher, and traditional single-axis sensor or two-axis sensor are in the size and the direction of detecting the magnetic field, because the component of external magnetic field on the detection direction of sensor is less for the sensitivity that magnetic field sensor detected is lower.
Disclosure of Invention
The invention mainly aims to provide a sensor, aiming at improving the detection sensitivity of the sensor.
In order to achieve the above object, the present invention provides a sensor, including:
a substrate;
the first sensing unit detects a magnetic field in a first sensing shaft direction, and comprises two first magnetic resistance modules and two second magnetic resistance modules which are arranged on the substrate, and the first magnetic resistance modules and the second magnetic resistance modules are connected to form a full-bridge circuit;
defining an included angle between the magnetization direction of a pinning layer of the first magnetoresistive module and the positive direction of the first sensing axis as alpha, defining an included angle between the magnetization direction of the pinning layer of the second magnetoresistive module and the positive direction of the first sensing axis as beta, wherein alpha and beta are complementary angles; and
the magnetic flux collectors are arranged on the substrate, a magnetic gap is formed between every two adjacent magnetic flux collectors, and each first magnetic resistance module and each second magnetic resistance module are respectively positioned in one magnetic gap.
Optionally, the flux concentrators on both sides of the first magnetoresistive module are aligned along a magnetization direction of a pinned layer of the first magnetoresistive module;
the magnetic flux collectors at both sides of the second magnetoresistive module are aligned along a magnetization direction of a pinned layer of the second magnetoresistive module.
Optionally, the plurality of the magnetic flux collectors includes two first magnetic flux collectors disposed opposite to each other, and two second magnetic flux collectors disposed opposite to each other;
two first magnetic flux collectors are arranged along the direction of the first sensing axis, and two second magnetic flux collectors are arranged along the direction perpendicular to the first sensing axis;
the first and second magnetic flux collectors have a dimension in a direction of the first sensing axis greater than a dimension in a direction perpendicular to the first sensing axis.
Optionally, the end of one of the first magnetic flux collectors facing the other first magnetic flux collector has a first guide surface and a second guide surface arranged at an angle, the first guide surface of one of the first magnetic flux collectors being arranged opposite to the second guide surface of the other first magnetic flux collector;
the first guide surface faces one of the first magneto-resistive modules, and the second guide surface faces the second magneto-resistive module.
Optionally, both the second magnetic flux collectors are trapezoidal, and long sides of the two second magnetic flux collectors are arranged oppositely or short sides of the two second magnetic flux collectors are arranged oppositely;
defining the two waists of the trapezoid of the second flux concentrator as a third guide surface and a fourth guide surface, respectively, the third guide surface of a second flux concentrator facing the first guide surface of a first flux concentrator and forming the magnetic gap; the fourth guide surface of a said second magnetic flux concentrator faces the second guide surface of a said first magnetic flux concentrator and forms said magnetic gap.
Optionally, the third guide surface is disposed parallel to the first guide surface, and the fourth guide surface is disposed parallel to the second guide surface.
Optionally, the first reluctance module comprises a plurality of reluctance resistors connected in series or in parallel, and the magnetic flux collector is arranged between two adjacent reluctance resistors;
and/or the second reluctance module comprises a plurality of reluctance elements which are connected in series or in parallel, and the magnetic flux collector is arranged between two adjacent reluctance elements.
Optionally, the sensor further includes a second sensing unit disposed on the substrate, the second sensing unit detects a magnetic field in a second sensing direction, the second sensing direction is perpendicular to the first sensing direction, the second sensing unit includes two third magnetic resistance modules and two fourth magnetic resistance modules disposed on the substrate, and the third magnetic resistance modules and the fourth magnetic resistance modules are connected to form a half-bridge circuit;
the magnetization directions of the pinned layers of the two third magnetoresistive modules are parallel to the magnetization direction of the free layer of the third magnetoresistive module and are parallel to the second sensing axis direction; the magnetization directions of the pinned layers of the two fourth magnetoresistive modules are vertical to the magnetization direction of the free layer of the fourth magnetoresistive module; the magnetization directions of the pinned layers of the third and fourth magnetic resistance modules coincide.
Optionally, the magnetic flux collectors are further disposed corresponding to the third reluctance modules, and two of the third reluctance modules are respectively disposed on the two magnetic flux collectors.
The invention also provides electronic equipment which is characterized by comprising a sensor;
the sensor includes:
a substrate;
the first sensing unit detects a magnetic field in a first sensing shaft direction, and comprises two first magnetic resistance modules and two second magnetic resistance modules which are arranged on the substrate, and the first magnetic resistance modules and the second magnetic resistance modules are connected to form a full-bridge circuit;
defining an included angle between the magnetization direction of a pinning layer of the first magnetoresistive module and the positive direction of the first sensing axis as alpha, defining an included angle between the magnetization direction of the pinning layer of the second magnetoresistive module and the positive direction of the first sensing axis as beta, wherein alpha and beta are complementary angles; and
the magnetic flux collectors are arranged on the substrate, a magnetic gap is formed between every two adjacent magnetic flux collectors, and each first magnetic resistance module and each second magnetic resistance module are respectively positioned in one magnetic gap.
According to the technical scheme, a plurality of magnetic flux collectors are further arranged in the sensor, the magnetic flux collectors are arranged on the substrate, and a magnetic gap is formed between every two adjacent magnetic flux collectors. When the sensor detects a magnetic field, the magnetic flux collectors in the magnetic field can guide the magnetic field, the magnetic field can be concentrated along the arrangement direction of the magnetic flux collectors, and in a magnetic gap formed by two adjacent magnetic flux collectors, the magnetic field is concentrated from one magnetic flux collector to the other magnetic flux collector, so that the magnetic field intensity at the magnetic gap is increased. Each first magnetic resistance module and each second magnetic resistance module are respectively positioned in a magnetic gap, and in the process of detecting a magnetic field by the sensor, the magnetic field strength of the positions of the first magnetic resistance module and the second magnetic resistance module is increased and the direction of the magnetic field strength is changed to be parallel to the pinning layer, so that the detection effect of the sensor on the magnetic field is more sensitive.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a first sensing unit in an embodiment of a sensor according to the present invention;
FIG. 2 is a schematic diagram of the first and second magnetoresistive modules of FIG. 1 showing the magnetization direction of the pinned layer (solid line arrows) and the magnetization direction of the initial free layer (dashed line arrows);
FIG. 3 is a schematic diagram of the magnetic field direction of the first sensing unit in FIG. 1 in the magnetic field of the first sensing axis;
FIG. 4 is a schematic structural diagram of another embodiment of a sensor according to the present invention;
FIG. 5 is a schematic structural diagram of a further embodiment of a sensor according to the present invention;
FIG. 6 is a schematic diagram of the first and second magnetoresistive modules of FIG. 5 showing the magnetization direction of the pinned layer (solid line arrows) and the magnetization direction of the initial free layer (dashed line arrows);
FIG. 7 is a schematic diagram of the magnetic field direction of the first sensing unit in FIG. 5 in the magnetic field of the first sensing axis;
fig. 8 is a schematic structural diagram of a second sensing unit in the embodiment of the sensor according to the present invention.
The reference numbers indicate:
| reference numerals | Name (R) | Reference numerals | Name (R) |
| 10 | |
231 | |
| 11 | First magneto- |
233 | |
| 13 | Second magneto- |
25 | Third |
| 20 | |
27 | Fourth |
| 21 | First |
30 | |
| 211 | |
31 | Third magneto |
| 213 | |
33 | Fourth magneto |
| 23 | Second magnetic flux collector |
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all directional indicators (such as up, down, left, right, front, back \8230;) in the embodiments of the present invention are only used to explain the relative positional relationship between the components, the motion situation, etc. in a specific posture (as shown in the attached drawings), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between the embodiments may be combined with each other, but must be based on the realization of the technical solutions by a person skilled in the art, and when the technical solutions are contradictory to each other or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The present invention provides a sensor, which mainly relates to the measurement field, in particular to a sensor in the magnetic electronic field compatible with Complementary Metal Oxide Semiconductor (CMOS), such as an angle sensor. The sensor is used for detecting the size and the direction of the magnetic field. The sensor can be a single-axis sensor or a double-axis sensor, and when the sensor is a single-axis sensor, the sensor can detect the size and the direction of a magnetic field in one direction; when the sensor is a biaxial sensor, the sensor can detect the magnitude and direction of the magnetic field in two directions.
Referring to fig. 1, in the present invention, a sensor includes a substrate, and a first sensing unit 10 disposed on the substrate. The first sensing unit 10 includes two first magneto-resistive modules 11 and two second magneto-resistive modules 13 disposed on a substrate. The two first magnetic resistance modules 11 and the two second magnetic resistance modules 13 are connected to form a full bridge circuit, and the full bridge circuit meets the setting requirement of a Wheatstone full bridge circuit, that is, the two first magnetic resistance modules 11 are respectively located on one pair of oppositely arranged bridge arms of the full bridge circuit, and the two second magnetic resistance modules 13 are respectively located on the other pair of oppositely arranged bridge arms of the full bridge circuit.
The first sensing unit 10 can detect a magnetic field in the first sensing axis direction. In the sensor according to the technical solution of the present invention, in the process of detecting the external magnetic field, a component of the external magnetic field in the first sensing axis direction can be detected by the first sensing unit 10.
The specific structure of the first sensing unit 10 capable of detecting the magnetic field in the first sensing axis direction may be: in the first sensing unit 10, the magnetization directions of the pinned layers of the two first magnetoresistive modules 11 are perpendicular to the magnetization direction of the initial free layer, the magnetization directions of the pinned layers of the two first magnetoresistive modules 11 are consistent, and the directions of the initial free layers of the two first magnetoresistive modules 11 are consistent; the magnetization directions of the pinned layers of the two second magnetic resistance modules 13 are perpendicular to the magnetization direction of the initial free layer, and the magnetization directions of the pinned layers of the two second magnetic resistance modules 13 coincide with each other and the directions of the initial free layers of the two second magnetic resistance modules 13 coincide with each other. Defining: the magnetization direction of the pinned layer of the first magnetoresistive module 11 makes an angle α with the square of the first sense axis, defining: the angle between the magnetization direction of the pinned layer of the second magnetoresistive module 13 and the positive direction of the first sense axis is β, and α and β are complementary angles.
In the technical scheme of the invention, a plurality of magnetic flux collectors 20 are also arranged in the sensor, the magnetic flux collectors 20 are arranged on the substrate, and a magnetic gap is formed between two adjacent magnetic flux collectors 20. In the process of detecting a magnetic field, the magnetic flux collectors 20 in the magnetic field can guide the magnetic field, the magnetic field can be concentrated along the arrangement direction of the magnetic flux collectors 20, and in the magnetic gap formed by two adjacent magnetic flux collectors 20, the magnetic field is concentrated from one magnetic flux collector 20 to the other magnetic flux collector 20, so that the magnetic field strength in the magnetic gap is increased.
Each first magnetic resistance module 11 and each second magnetic resistance module 13 are respectively positioned in a magnetic gap, and in the process of detecting a magnetic field, the magnetic field intensity of the position where the first magnetic resistance module 11 and the second magnetic resistance module 13 are positioned is increased and the direction is changed to be parallel to the pinning layer, so that the sensor is more sensitive to the detection effect of the magnetic field.
In the embodiment shown in fig. 2 and 3 in combination, fig. 2 shows the magnetization direction of the pinned layer (solid arrow) and the magnetization direction of the initial free layer (dotted arrow) of the first magnetoresistive module 11, and the magnetization direction of the pinned layer (solid arrow) and the magnetization direction of the initial free layer (dotted arrow) of the second magnetoresistive module 13, in an embodiment of the first sensing unit 10. In this embodiment, the first sensing unit 10 is used for detecting the illustrated Y-axis magnetic field, i.e., in this embodiment, the first sensing axis is the Y-axis. Fig. 3 shows the deflection direction of the magnetic field in the Y-axis direction under the structure of the flux concentrator 20.
In the first sensing unit 10, an angle α between the magnetization direction of the pinned layer of the first magnetoresistive module 11 and the positive direction of the first sensing axis may be in a value range of 0 ° < α < 180 °, specifically may be 30 °, 45 °, 60 °, 120 °, 135 °, or 150 °, and may also be any value in the above value range; the angle β between the magnetization direction of the pinned layer of the second magnetoresistive module 13 and the positive direction of the first sense axis may be in a range of 0 ° < β < 180 °, and specifically may be 30 °, 45 °, 60 °, 90 °, 120 °, 135 °, or 150 °. When the alpha value is 30 degrees, the beta value is 150 degrees; when the alpha value is 45 degrees, the beta value is 135 degrees; when the value of alpha is 60 degrees, the value of beta is 120 degrees; when the value of alpha is 90 degrees, the value of beta is 90 degrees; when the value of alpha is 120 degrees, the value of beta is 60 degrees; when alpha is 135 degrees, beta is 45 degrees; when alpha is 150 degrees, beta is 30 degrees. Accordingly, α and β may also be other values that are complementary angles to each other, which is not described herein.
In the embodiment shown in fig. 2, the magnetization direction of the pinned layer of the first magneto resistive module 11 makes an angle α of 135 ° with the positive direction of the first sense axis, and the magnetization direction of the pinned layer of the second magneto resistive module 13 makes an angle β of 45 ° with the positive direction of the first sense axis.
In the embodiments shown in fig. 5, 6 and 7, the magnetization direction of the pinned layer of the first magneto resistive module 11 makes an angle α of 45 ° with the positive direction of the first sense axis, and the magnetization direction of the pinned layer of the second magneto resistive module 13 makes an angle β of 135 ° with the positive direction of the first sense axis.
The flux concentrators 20 at both sides of the first magnetoresistive module 11 are aligned along the magnetization direction of the pinned layer of the first magnetoresistive module 11. The magnetic flux collectors 20 are arranged such that two adjacent magnetic flux collectors 20 in a magnetic gap of the first magnetoresistive module 11 can guide the applied magnetic field to deflect to a direction aligned with the magnetization direction of the pinned layer of the first magnetoresistive module 11. The structure may be embodied such that the flux collectors 20 at both sides of the first magneto resistive module 11 respectively have guide surfaces facing the first magneto resistive module 11, the guide surfaces of the two flux collectors 20 form a magnetic gap accommodated by the first magneto resistive module 11 therebetween, the guide surfaces of the two flux collectors 20 are aligned along a magnetization direction of a pinned layer of the first magneto resistive module 11, and the magnetization direction of the pinned layer of the first magneto resistive module 11 is perpendicular to the guide surfaces. At the gap formed by the guide surfaces of the two magnetic flux collectors 20, the applied magnetic field is guided by the guide surface of one magnetic flux collector 20 to the direction of the guide surface of the other magnetic flux collector 20, so that the magnetic field at the magnetic gap where the first magneto-resistive module 11 is located is deflected to be in the same line with the magnetization direction of the pinned layer of the first magneto-resistive module 11.
The flux concentrators 20 at both sides of the second magnetic resistance module 13 are aligned along the magnetization direction of the pinned layer of the second magnetic resistance module 13. The magnetic flux collectors 20 are arranged such that two adjacent magnetic flux collectors 20 at the magnetic gap where the second magneto resistive module 13 is located can guide the applied magnetic field to deflect to have a direction in line with the magnetization direction of the pinned layer of the second magneto resistive module 13. The structure may be embodied such that the magnetic flux collectors 20 at both sides of the second magneto resistive module 13 respectively have guide surfaces facing the second magneto resistive module 13, the guide surfaces of the two magnetic flux collectors 20 form a magnetic gap between the guide surfaces of the second magneto resistive module 13, the guide surfaces of the two magnetic flux collectors 20 are aligned along a magnetization direction of the pinned layer of the second magneto resistive module 13, and the magnetization direction of the pinned layer of the second magneto resistive module 13 is perpendicular to the guide surfaces. At the gap formed by the guide surfaces of the two magnetic flux collectors 20, the applied magnetic field is guided by the guide surface of one magnetic flux collector 20 to the direction of the guide surface of the other magnetic flux collector 20, so that the magnetic field at the magnetic gap where the second magneto-resistive module 13 is located is deflected to be in the same line with the magnetization direction of the pinned layer of the second magneto-resistive module 13. The magnetic flux collector 20 is installed in such a manner that it can amplify, guide, and reduce noise of an external magnetic field, thereby improving the sensitivity of sensor detection and improving the linear range of sensor output values.
Because the included angle alpha between the magnetization direction of the pinning layer of the first magnetoresistive module 11 and the positive direction of the first sensing axis and the included angle beta between the magnetization direction of the pinning layer of the second magnetoresistive module 13 and the positive direction of the first sensing axis are complementary angles. When the sensor provided by the technical scheme of the invention detects the magnetic field in the direction of the first sensing shaft. When the direction of the magnetic field at the magnetic gap where the first magnetic resistance module 11 is located is consistent with the magnetization direction of the pinning layer of the first magnetic resistance module 11, the direction of the magnetic field at the magnetic gap where the second magnetic resistance module 13 is located is opposite to the magnetization direction of the pinning layer of the second magnetic resistance module 13;
alternatively, when the direction of the magnetic field at the magnetic gap where the first magnetoresistive module 11 is located is made opposite to the magnetization direction of the pinned layer of the first magnetoresistive module 11, the direction of the magnetic field at the magnetic gap where the second magnetoresistive module 13 is located is made to coincide with the magnetization direction of the pinned layer of the second magnetoresistive module 13.
The plurality of magnetic flux collectors 20 includes two first magnetic flux collectors 21 disposed opposite to each other, and two second magnetic flux collectors 23 disposed opposite to each other;
the two first magnetic flux collectors 21 are arranged in a direction of the first sensing axis and the two second magnetic flux collectors 23 are arranged in a direction perpendicular to the first sensing axis. The first and second flux collectors 21, 23 combine to form a structure that is able to direct the magnetic field to be detected in the direction of the first sensing axis and perpendicular to the first sensing axis, respectively, and then deflect the magnetic field at the magnetic gap.
Since the first sensing unit 10 is used for detecting a magnetic field in a first sensing axis direction, the dimension of the structure formed by the first magnetic flux collector 21 and the second magnetic flux collector 23 in combination is larger in the first sensing axis direction than in a direction perpendicular to the first sensing axis direction, so that the structure formed by the first magnetic flux collector 21 and the second magnetic flux collector 23 can amplify the component of the magnetic field to be detected in the first sensing axis direction to a greater extent, and amplify the component in the direction perpendicular to the first sensing axis to a lesser extent.
Specifically, the first and second magnetic flux collectors 21 and 23 may have a dimension in the direction of the first sensing axis larger than a dimension in the direction perpendicular to the first sensing axis.
With further reference to fig. 1, the end of a first magnetic flux concentrator 21 facing another first magnetic flux concentrator 21 has a first 211 and a second 213 guide surface arranged at an angle, the first 211 and the second 213 guide surfaces being arranged symmetrically with respect to the first sensing axis. As shown in fig. 1, the magnetization direction of the pinned layer of the first magneto resistive module 11 makes an angle of 135 ° with the positive direction of the first sense axis, the magnetization direction of the pinned layer of the second magneto resistive module 13 makes an angle of 45 ° with the positive direction of the first sense axis, the angle of the first guide surface 211 and the second guide surface 213 of the first flux concentrator 21 in this embodiment is 90 °, i.e., the first guide surface 211 and the second guide surface 213 of the first flux concentrator 21 are perpendicular.
The first guide surface 211 of a first magnetic flux collector 21 is arranged opposite to the second guide surface 213 of another first magnetic flux collector 21, the first guide surface 211 facing a first magneto resistive module 11 and the second guide surface 213 facing a second magneto resistive module 13. Wherein the first guide surface 211 of one first magnetic flux collector 21 faces the first reluctance module 11 on one arm of the full bridge circuit, and the first guide surface 211 of the other first magnetic flux collector 21 faces the first reluctance module 11 on the other arm of the full bridge circuit; the second guide surface 213 of one second flux concentrator 23 faces the second magneto resistive module 13 in one leg of the full bridge circuit, and the second guide surface 213 of the other first flux concentrator 21 faces the second magneto resistive module 13 in the other leg of the full bridge circuit.
The two second magnetic flux collectors 23 are both trapezoidal, each trapezoid has a long side and a short side which are opposite to each other, and two waists which are opposite to each other, the long sides of the two second magnetic flux collectors 23 are opposite to each other, or the short sides of the two magnetic flux collectors 20 are opposite to each other;
the two waists of the trapezoid defining the second flux concentrator 23 are the third guide surface 231 and the fourth guide surface 233, respectively, the third guide surface 231 of a second flux concentrator 23 facing the first guide surface 211 of a first flux concentrator 21 and forming a magnetic gap; the fourth guide surface 233 of a second magnetic flux collector 23 faces the second guide surface 213 of a first magnetic flux collector 21 and forms a magnetic gap.
Referring to fig. 1, in the embodiment shown in fig. 1, the short sides of two second magnetic flux concentrators 23 are arranged opposite to each other. Referring to fig. 5, in the embodiment shown in fig. 5, the long sides of the two second flux concentrators 23 are arranged opposite to each other.
The third guide surface 231 is disposed parallel to the first guide surface 211, and the fourth guide surface 233 is disposed parallel to the second guide surface 213. The third guide surface 231 corresponds to the shape and size of the first guide surface 211 and the fourth guide surface 233 corresponds to the shape and size of the second guide surface 213 in order to make full use of the first and second magnetic flux collectors 21, 23.
Referring to fig. 4, the first magnetic resistance module 11 may further include a plurality of magnetic resistances connected in series or in parallel, and a magnetic flux collector 20 is disposed between two adjacent magnetic resistances to further enhance the magnetic field strength at the magnetic gap where the first magnetic resistance module 11 is located;
and/or the second reluctance module 13 comprises a plurality of reluctance elements connected in series or in parallel, and a magnetic flux collector 20 is further arranged between two adjacent reluctance elements to further enhance the magnetic field intensity at the magnetic gap where the second reluctance module 13 is located.
The flux collectors 20 between two adjacent reluctance in the first reluctance module 11 can be defined as a third flux collector 25 to distinguish the third flux collector 25 from the first flux collector 21 and the second flux collector 23.
The magnetic resistances constituting the first magnetic resistance module 11 and the second magnetic resistance module 13 may each have a rectangular parallelepiped structure so that the magnetization direction of the pinned layer thereof is more regular.
Referring to fig. 8, the sensor according to the present invention may further include a second sensing unit 30 disposed on the substrate, where the second sensing unit 30 is configured to detect a magnetic field in a second sensing direction, and the second sensing direction is perpendicular to the first sensing direction;
the second sensing unit 30 includes two third magneto resistive modules 31 and two fourth magneto resistive modules 33 disposed on the substrate, and the third magneto resistive modules 31 and the fourth magneto resistive modules 33 are connected to form a half bridge circuit; the half-bridge circuit wheatstone bridge principle is that two third magnetic resistance modules 31 are respectively positioned on one pair of oppositely arranged bridge arms of the half-bridge circuit, and two fourth magnetic resistance modules 33 are respectively positioned on the other pair of oppositely arranged bridge arms of the half-bridge circuit.
The magnetization direction of the pinned layers of the two third magneto-resistive modules 31 is parallel to the magnetization direction of the initial free layer of the third magneto-resistive module 31 and parallel to the second sense axis direction; the magnetization direction of the pinned layers of the two fourth magneto-resistive modules 33 is perpendicular to the magnetization direction of the initial free layer of the fourth magneto-resistive module 33; the magnetization directions of the pinned layers of the third and fourth magnetic resistance modules 31 and 33 coincide.
The third magneto resistive module 31 and the fourth magneto resistive module 33 may be formed by connecting a plurality of magneto resistances in series or in parallel.
The plurality of magnetic flux collectors 20 of the present invention may further include a magnetic flux collector 20 disposed corresponding to the third reluctance module 31, and two of the third reluctance modules 31 are disposed on the two magnetic flux collectors 20, respectively. The flux concentrator 20 arranged in correspondence with the third magneto resistive module 31 may be defined as a fourth flux concentrator 27.
The fourth magnetic flux collector 27 can shield the third magneto resistive module 31 so that the resistance value of the magneto resistive element on the third magneto resistive module 31 does not change with an external magnetic field. In the process of detecting the magnetic field in the second sensing axis direction, the second sensing unit 30 generates a non-zero output by the four bridge arm differences. The detection of the magnetic field in the direction of the second sensing axis can be completed.
The second sensing unit 30 is capable of detecting a magnetic field component on the second sensing axis. This first sensing unit 10 and second sensing unit 30 have constituteed the biax sensor jointly for this sensor can detect the component of external magnetic field in first sensing axis direction, can detect the component of external magnetic field in the second sensing axis direction simultaneously, in order to reach the effect of accurate measurement external magnetic field intensity and direction.
In the embodiment shown in fig. 8, the second sensing unit 30 is used for detecting the magnetic field in the illustrated X-axis direction, i.e. in the embodiment, the X-axis direction is the direction of the second sensing axis.
The flux concentrator 20 can be formed on the substrate at one time using an electroplating process. The flux concentrator 20 may be embodied as a soft magnetic material with high magnetic permeability, such as nickel iron, iron silicon alloy, or various soft magnets.
The present invention further provides an electronic device, which includes a sensor, and the specific structure of the sensor refers to the above embodiments, and since the electronic device adopts all technical solutions of all the above embodiments, the electronic device at least has all beneficial effects brought by the technical solutions of the above embodiments, and details are not repeated herein. The electronic device may be any electronic device capable of detecting an external magnetic field using a sensor, for example: mobile phones, computers, game equipment, or vehicle-mounted angle detection equipment and the like.
The above description is only an alternative embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (9)
1. A sensor, comprising:
a substrate;
the first sensing unit detects a magnetic field in a first sensing shaft direction, and comprises two first magnetic resistance modules and two second magnetic resistance modules which are arranged on the substrate, and the first magnetic resistance modules and the second magnetic resistance modules are connected to form a full-bridge circuit;
defining an included angle between the magnetization direction of a pinning layer of the first magnetoresistive module and the positive direction of the first sensing axis as alpha, defining an included angle between the magnetization direction of the pinning layer of the second magnetoresistive module and the positive direction of the first sensing axis as beta, wherein alpha and beta are complementary angles; and
the magnetic flux collectors are arranged on the substrate, a magnetic gap is formed between every two adjacent magnetic flux collectors, and each first magnetic resistance module and each second magnetic resistance module are respectively positioned in one magnetic gap;
the magnetic flux collectors on both sides of the first magnetoresistive module are aligned along a magnetization direction of a pinned layer of the first magnetoresistive module;
the magnetic flux collectors at both sides of the second magnetoresistive module are aligned along a magnetization direction of a pinned layer of the second magnetoresistive module.
2. The sensor of claim 1, wherein the plurality of the magnetic flux collectors includes two first magnetic flux collectors disposed opposite to each other and two second magnetic flux collectors disposed opposite to each other;
two first magnetic flux collectors are arranged along the direction of the first sensing axis, and two second magnetic flux collectors are arranged along the direction perpendicular to the first sensing axis;
the first and second magnetic flux collectors have a dimension in a direction of the first sensing axis greater than a dimension in a direction perpendicular to the first sensing axis.
3. The sensor of claim 2, wherein an end of one of the first flux concentrators facing the other of the first flux concentrators has a first guide surface and a second guide surface disposed at an angle, the first guide surface of one of the first flux concentrators being disposed opposite the second guide surface of the other of the first flux concentrators;
the first guide surface faces one of the first magneto-resistive modules, and the second guide surface faces the second magneto-resistive module.
4. The sensor according to claim 3, wherein the two second magnetic flux collectors are each trapezoidal, and long sides of the two second magnetic flux collectors are disposed opposite to each other or short sides of the two second magnetic flux collectors are disposed opposite to each other;
the two legs of the trapezoid defining the second magnetic flux concentrator are a third guide surface and a fourth guide surface, respectively, the third guide surface of a second magnetic flux concentrator facing the first guide surface of a first magnetic flux concentrator and forming the magnetic gap; the fourth guide surface of a said second magnetic flux concentrator faces the second guide surface of a said first magnetic flux concentrator and forms said magnetic gap.
5. The sensor of claim 4, wherein the third guide surface is disposed parallel to the first guide surface and the fourth guide surface is disposed parallel to the second guide surface.
6. The sensor of claim 1, wherein the first magneto-resistive module comprises a plurality of magneto-resistances connected in series or in parallel, and the magnetic flux collector is disposed between two adjacent magneto-resistances;
and/or the second reluctance module comprises a plurality of reluctance elements which are connected in series or in parallel, and the magnetic flux collector is arranged between two adjacent reluctance elements.
7. The sensor according to any one of claims 1 to 6, further comprising a second sensing unit disposed on the substrate, the second sensing unit sensing a magnetic field in a second sensing direction, the second sensing direction being perpendicular to the first sensing direction, the second sensing unit comprising two third magneto-resistive modules and two fourth magneto-resistive modules disposed on the substrate, the third magneto-resistive modules and the fourth magneto-resistive modules being connected to form a half-bridge circuit;
the magnetization directions of the pinned layers of the two third magnetic resistance modules are parallel to the magnetization direction of the free layer of the third magnetic resistance module and are parallel to the second sensing shaft direction; the magnetization directions of the pinned layers of the two fourth magnetic resistance modules are vertical to the magnetization direction of the free layer of the fourth magnetic resistance module; the magnetization directions of the pinned layers of the third and fourth magnetoresistive modules coincide.
8. The sensor of claim 7, wherein the flux concentrator is further disposed corresponding to the third magneto-resistive modules, and two of the third magneto-resistive modules are disposed on the two flux concentrators, respectively.
9. An electronic device, characterized in that it comprises a sensor according to any one of claims 1 to 8.
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| CN202110227552.6A CN113030804B (en) | 2021-03-01 | 2021-03-01 | Sensor and electronic device |
| PCT/CN2021/143203 WO2022183829A1 (en) | 2021-03-01 | 2021-12-30 | Sensor and electronic device |
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| CN113030804B (en) * | 2021-03-01 | 2022-12-23 | 歌尔微电子股份有限公司 | Sensor and electronic device |
| CN113030803A (en) * | 2021-03-01 | 2021-06-25 | 歌尔微电子股份有限公司 | Magnetic sensor, method for manufacturing magnetic sensor, and electronic device |
| CN115728681B (en) * | 2022-11-15 | 2023-09-12 | 南方电网数字电网研究院有限公司 | Magnetic field sensor, testing method and device thereof, preparation method and computer equipment |
| CN116224189B (en) * | 2023-05-06 | 2023-09-05 | 江苏多维科技有限公司 | Correction method for magnetic flux gathering element position error in magnetic sensor |
| CN116224190B (en) * | 2023-05-06 | 2023-09-05 | 江苏多维科技有限公司 | Magnetic sensor for eliminating manufacturing error of magnetic flux collecting element |
| CN116997244A (en) * | 2023-08-01 | 2023-11-03 | 北京航空航天大学青岛研究院 | Magnetic flux collector, manufacturing method thereof and magnetic sensing chip |
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| WO2022183829A1 (en) | 2022-09-09 |
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