CN203894395U - Magneto-resistor Z-axis gradient sensor chip - Google Patents
Magneto-resistor Z-axis gradient sensor chip Download PDFInfo
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- CN203894395U CN203894395U CN201420287275.3U CN201420287275U CN203894395U CN 203894395 U CN203894395 U CN 203894395U CN 201420287275 U CN201420287275 U CN 201420287275U CN 203894395 U CN203894395 U CN 203894395U
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Abstract
The utility model discloses a magneto-resistor Z-axis gradient sensor chip for detecting gradient of a Z-axis magnetic field component generated by a magnetic medium in an XY plane. The magneto-resistor Z-axis gradient sensor chip comprises the components of: a Si substrate, an assembly of two or two sets of flux guiders which are separated for a distance Lg, and an electrically interconnected magneto-resistor sensing unit array. The magneto-resistor sensing units are arranged on the Si substrate and are arranged above or below the edge of the flux guiders. The flux guiders converts the Z-axis magnetic field component to a direction which is parallel with the surface of the Si substrate and is along the sensitive axis direction of the magneto-resistor sensing unit. The magneto-resistor sensing units are electrically connected to a half-bridge or full-bridge gradiometer arrangement, wherein opposite bridge arms are separated for the distance of Lg. The sensor chip can be used with a PCB, an assembly of the PCB and a back magnet, or an assembly of the PCB, the back magnet and a packaging housing. The magneto-resistor Z-axis gradient sensor chip realizes measurement for the Z-axis gradient through a planar sensitive magneto-resistive sensor, and furthermore has advantages of: small dimension, low power consumption, higher magnetic field sensitivity than a Hall sensor, etc.
Description
Technical field
The utility model relates to magnetic sensor field, particularly a kind of magneto-resistor Z axis gradient sensor chip.
Background technology
Magnetic resistance gradient sensor is widely used in gear speed sensor, magnetic picture sensor, as POS machine magnetic head, magnetic head of cash inspecting machine etc., under normal circumstances, magnetoresistive transducer has plane sensing unit as GMR, TMR sensor, its magnetic-field-sensitive direction is parallel to the chip plane at sensor place, Hall sensor has the Z axis sensitive direction perpendicular to plane, Hall sensor is when for magnetic picture sensor at present, mainly contain the Hall effect magnetic head of the InSb membraneous material of Murata, measure based on Z axis magnetic-field component.No matter but be the Hall sensor of measuring based on Z axis magnetic-field component,, all there is certain problem in or GMR, the TMR sensor measured based on plane inner field component:
1) due to InSb not the material of a standard, the semiconductor fabrication process of the criteria of right and wrong of employing, therefore, with respect to the standard semiconductor fabrication techniques of the sensor such as TMR, GMR, its manufacturing process is comparatively complicated;
2) at present all magnetic picture sensor based on GMR, TMR mainly based on plane inner field sensitive direction, when for magnetic head of cash inspecting machine, need to use the back of the body magnet of a surperficial deep slot cutting, shape is comparatively complicated, therefore the Distribution of Magnetic Field that surface produces is inhomogeneous, and Z axis sensor based on InSb back of the body magnetic can use a magnetized back of the body magnetic patch of Z-direction, structure is comparatively simple;
3), for GMR, TMR sensor, Hall effect sensor magnetic field sensitivity is lower, poor stability (sensitivity, offset and resistance), repeatable poor (restive offset and change of sensitivity).
Summary of the invention
For the problem of above existence, the utility model proposes a kind of magneto-resistor Z axis gradiometer chip, in conjunction with the standard manufacture technique of GMR, TMR sensor and the advantage of Z axis sensor back of the body magnetic, successfully solve the deficiency of above problem, realize and utilized the measurement of the responsive magnetoresistive transducer of plane to Z axis magnetic field gradient, there is small size, low-power consumption, there is the advantages such as more highfield sensitivity than Hall sensor.
A kind of magneto-resistor Z axis gradient sensor chip that the utility model proposes, for surveying Z-direction magnetic-field component that magnetic medium the produces gradient in XY plane, described magneto-resistor Z axis gradient sensor chip comprises Si substrate, be positioned at magneto-resistor sensing unit that electrical interconnection on described Si substrate becomes full-bridge gradiometer or half-bridge gradiometer, be positioned at two or two groups of flux guide devices on described Si substrate; Described magneto-resistor sensing unit be positioned at described flux guide device above or below, and have the sensitive direction that is parallel to described Si substrate surface, described flux guide device is transformed into along the sensitive direction of described magneto-resistor sensing unit for the Z-direction magnetic-field component that described magnetic medium is produced;
Described every group of flux guide device comprises at least two flux guide devices, and the spacing between described two or two groups of flux guide devices is Lg, and in described full-bridge gradiometer or half-bridge gradiometer, the spacing between brachium pontis is Lg relatively.
Preferably, described magneto-resistor sensing unit is GMR and/or TMR sensing unit.
Preferably, described flux guide device is the magnetically soft alloy that is selected from one or more the element compositions in Co, Fe and Ni.
Preferably, described flux guide device is elongate in shape, its long axis Y-direction, and minor axis is along directions X, and its length L y is greater than width Lx, is also greater than thickness Lz.
Preferably, when described magneto-resistor sensing unit is less than or equal to 1/3*Lx to the vertical range of the Y direction center line of corresponding described flux guide device, can increase the magnetic field working range of described magneto-resistor sensing unit.
Preferably, the position of described magneto-resistor sensing unit is larger to the vertical range of described Y direction center line, or the thickness Lz of described flux guide device is larger, or the width Lx of described flux guide device is less, and the magnetic field sensitivity of described magneto-resistor sensing unit is higher.
Preferably, described magneto-resistor Z axis gradient sensor chip comprises two described flux guide devices, is arranged in two row one column arrays, and its line direction is Y direction, and column direction is X-direction, and line space Lg corresponds to Gradient Features distance.
Preferably, two brachium pontis in described half-bridge gradiometer correspond respectively to described two flux guide devices, described two brachium pontis are positioned at the same position of the same side of the Y-axis center line of corresponding flux guide device, and the described magneto-resistor sensing unit on two described brachium pontis has identical sensitive direction.
Preferably, two half-bridges in described full-bridge gradiometer correspond respectively to described two flux guide devices, two brachium pontis of each described half-bridge are symmetrically distributed in the Y-axis center line both sides of corresponding flux guide device, two brachium pontis that are connected with same power electrode are positioned at the same position of the same side of the Y-axis center line of corresponding flux guide device, and the described magneto-resistor sensing unit of described full-bridge gradiometer has identical sensitive direction.
Preferably, in two half-bridges of described full-bridge gradiometer, two brachium pontis of arbitrary half-bridge lay respectively at the same position of the same side of the Y-axis center line of two flux guide devices, the corresponding same flux guide device of two brachium pontis being connected with same power electrode and the Y-axis center line both sides that are symmetrically distributed in this flux guide device, the described magneto-resistor sensing unit of described full-bridge gradiometer has identical sensitive direction.
Preferably, every group of flux guide device is 2*N(N>1) individual, the array that described two groups of flux guide devices become two row one to be listed as, and line direction is along Y direction, and column direction is X-direction; Every group of array that flux guide device becomes N capable to be listed as, line direction is along Y direction, and column direction is X-direction; Line space Ls between every group of flux guide device is much smaller than Lg.
Preferably, N flux guide device of the respectively corresponding described two groups of flux guide devices of the magneto-resistor sensing unit on two brachium pontis of described half-bridge gradiometer, and the magneto-resistor sensing unit of described two brachium pontis is positioned at the same position of the same side of the Y-axis center line of corresponding flux guide device, described magneto-resistor sensing unit has same sensitive direction.
Preferably, the magneto-resistor sensing unit of two half-bridges in described full-bridge gradiometer corresponds respectively to N flux guide device of described two groups of flux guide devices, the magneto-resistor sensing unit of two brachium pontis of each described half-bridge is symmetrically distributed in the Y-axis center line both sides of corresponding flux guide device, the magneto-resistor sensing unit of two brachium pontis that are connected with same power electrode respectively corresponding described two groups of flux guide devices N flux guide device and be positioned at the same position of the same side of the Y-axis center line of corresponding flux guide device, the magneto-resistor sensing unit of described full-bridge gradiometer has same sensitive direction.
Preferably, in two half-bridges of described full-bridge gradiometer the magneto-resistor sensing unit of two brachium pontis of any half-bridge correspond respectively in two groups of flux guide devices N flux guide device and be positioned at the same position of the same side of the Y-axis center line of corresponding flux guide device, N flux guide device of the corresponding same group of flux guide device of magneto-resistor sensing unit of two brachium pontis that are connected with same power electrode and be symmetrically distributed in the Y-axis center line both sides of corresponding flux guide device, the magneto-resistor sensing unit of described full-bridge gradiometer has identical sensitive direction.
Preferably, described in each, the quantity of the magneto-resistor sensing unit of brachium pontis is identical, and the series connection of magneto-resistor sensing unit, and in parallel or mixing connection in series-parallel electrical interconnection becomes two-port structure, and described brachium pontis all has same electrical interconnection structure.
Preferably, described magneto-resistor Z axis gradient sensor chip is electrically connected with PCB by Bonding mode.
Preferably, described magneto-resistor Z axis gradient sensor chip is electrically connected with PCB by silicon wafer through hole (Through Silicon Vias, TSV).
Preferably, described magneto-resistor Z axis gradient sensor chip is installed on a PCB, the Z-direction magnetic-field component producing for detection of permanent magnetism magnetic medium, the saturation magnetic field that the chip design of described magneto-resistor Z axis gradient sensor is the Z-direction magnetic field that has high magnetic field sensitivity and produce higher than described permanent magnetism magnetic medium.
Preferably, described magneto-resistor Z axis gradient sensor chip is installed on a PCB, the described PCB back side is provided with a permanent magnets to produce the magnetic field perpendicular to described magneto-resistor Z axis gradient sensor chip, and the chip design of described magneto-resistor Z axis gradient sensor is to have the saturation magnetic field that is more greater than described permanent magnet generation magnetic field.
Preferably, described magneto-resistor Z axis gradient sensor chip is installed on a PCB, the described PCB back side is provided with a permanent magnet for generation of the magnetic field perpendicular to described magneto-resistor Z axis gradient sensor chip, described PCB is positioned in an encapsulating shell, described encapsulating shell comprises a mounting bracket, is positioned at the contact pin electrode at back, described PCB and described magneto-resistor Z axis gradient sensor chip are arranged in described mounting bracket, and the chip design of described magneto-resistor Z axis gradient sensor is saturation magnetic field and the highfield sensitivity having higher than magnetic field of permanent magnet.
Preferably, the sensitive direction of described magneto-resistor sensing unit is X-direction.
Brief description of the drawings
In order to be illustrated more clearly in the technical scheme in the utility model embodiment technology, to the accompanying drawing of required use in embodiment technical description be briefly described below, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 magneto-resistor Z axis gradient sensor chip and Z magnetic-field measurement schematic diagram thereof.
Fig. 2 flux guide device and magneto-resistor cell position figure.
The structural representation of Fig. 3 bilateral amount guide half-bridge structure magneto-resistor Z axis gradient sensor chip.
The magneto-resistor unit electrical connection schematic diagram of Fig. 4 bilateral amount guide half-bridge structure magneto-resistor Z axis gradient sensor chip.
The structural representation of Fig. 5 bilateral amount guide full bridge structure magneto-resistor Z axis gradient sensor chip.
The magneto-resistor unit electrical connection schematic diagram one of Fig. 6 bilateral amount guide full bridge structure magneto-resistor Z axis gradient sensor chip.
The magneto-resistor unit electrical connection schematic diagram two of Fig. 7 bilateral amount guide full bridge structure magneto-resistor Z axis gradient sensor chip.
The structural representation of many flux guide of Fig. 8 device half-bridge structure magneto-resistor Z axis gradient sensor chip.
The magneto-resistor unit electrical connection schematic diagram of many flux guide of Fig. 9 device half-bridge structure magneto-resistor Z axis gradient sensor chip.
The structural representation of many flux guide of Figure 10 device full bridge structure magneto-resistor Z axis gradient sensor chip.
The magneto-resistor unit electrical connection schematic diagram one of many flux guide of Figure 11 device full bridge structure magneto-resistor Z axis gradient sensor chip.
The magneto-resistor unit electrical connection schematic diagram two of many flux guide of Figure 12 device full bridge structure magneto-resistor Z axis gradient sensor chip.
Magneto-resistor unit connection layout on Figure 13 hyperchannel guide full bridge structure magneto-resistor Z axis gradient sensor chip bridge arm: a series connection; B parallel connection.
Figure 14 magneto-resistor Z axis gradient sensor chip application detects schematic diagram in Hard Magnetic magnetic picture.
Figure 15 magneto-resistor Z axis gradient sensor chip application is in soft magnetic property video head schematic diagram.
The magneto-resistor Z axis gradient sensor chip schematic diagram of Figure 16 band mounting structure.
Embodiment
Below with reference to the accompanying drawings and in conjunction with the embodiments, describe the utility model in detail.
Embodiment mono-
Fig. 1 is magneto-resistor Z axis gradiometer chip schematic diagram, comprise Si substrate 1, magneto-resistor Z axis sensor 20, magneto-resistor Z axis sensor 20 is positioned on Si substrate 1, magneto-resistor Z axis sensor comprises that 2 or 2 groups comprise multiple magnetic flux guides 2 and magneto-resistor unit 3(figure comprises 3(1) or 3(2)), magneto-resistor unit 3 be positioned at flux guide device 2 above or below, in order to simplify, this figure has only provided magneto-resistor unit 3 and has been positioned at the situation of flux guide device 2 belows, actually also comprises that magneto-resistor unit 3 is positioned at the situation of flux guide device 2 tops.Wherein magneto-resistor unit 3 is electrically connected and is connected into half-bridge or full bridge structure gradiometer.Fig. 1 gives the measuring principle in Z axis magnetic field, Z axis magnetic field 4 is through after flux guide device 2, because flux guide device 2 is high magnetic permeability magnetically soft alloy material, comprise Ni, the magnetically soft alloy material of several element compositions such as Fe and Co, magnetic field 5(1) or 5(2) at the magneto-resistor unit 3(1 near flux guide device 2 upper surfaces or lower surface) or 3(2) near position deflect, there is being parallel to the magnetic-field component 5(3 of substrate) and 5(4), thereby can be there is the magneto-resistor unit 3(1 of flat magnetic field sensitivity) or 3(2) detect.
Fig. 2 is magneto-resistor unit 3(1) or 3(2) and the location drawing of flux guide device 2 upper surfaces or lower surface, flux guide device 2 is elongate in shape, long axis Y direction, minor axis is along X-direction, magneto-resistor unit is positioned at distance Y direction of principal axis edge 7(1) or position Y1 or Y2 place 7(2) and between Y direction center line 6, and Y1 and Y2 are with respect to Y direction center line 6 symmetries, it can also be seen that from Fig. 1, Z axis magnetic field 4 is through after flux guide devices 2, the X-direction magnetic-field component 5(4 of Y1 and two positions of Y2) and 5(3) opposite direction.
Magneto-resistor unit 3 is GMR and/or TMR sensing unit, and its magnetic-field-sensitive direction is X-direction, and magneto-resistor unit 3 is electrically connected into full-bridge or half-bridge gradiometer.It should be noted that, the magneto-resistor unit in the utility model be positioned at flux guide device above or below refer to be positioned at each edge that magneto-resistor unit is positioned at flux guide device with vertical direction or the vertical lower of scope.
Embodiment bis-
Fig. 3 and Fig. 4 are magneto-resistor Z axis half-bridge gradient sensor chip and the electrical connection graph thereof of another kind of type, wherein, magnetoresistive cell 3(5 on two brachium pontis of half-bridge) and 3(6) lay respectively in flux guide device A1 and B1, and it plants oneself identical respectively, and it is in Y1 or Y2 place together, for convenience of explanation, Fig. 3,4 have provided the situation that is in Y1 position together, and have identical magnetic-field-sensitive direction, now, half bridge output signal can calculate according to following mode:
Z axis magnetic field H Z obtains X-direction magnetic field H X after flux guide device, and the mutual relationship between HZ and HX is:
HX1=HZ1*SXZ （1）
HX2=HZ2*SXZ （2）
Wherein, SXZ is the magnetic field conversion parameter of flux guide device, relevant to flux guide device geometry, material property, HZ1, HZ2 are respectively flux guide device A1 and the corresponding Z axis magnetic-field component of B1, and HX1 and HX2 are respectively after flux guide device A1 and B1 sensitive axes at magneto-resistive transducing cell position place to magnetic-field component.
Final half bridge output signal is
Vout=HX1*S-HX2*S=SXZ*HZ1*S-SXZ*HZ2*S
=SXZ*S*(HZ1-HZ2)（3）
Wherein, S is sensitivity.
The Z axis magnetic field gradient that Z axis magnetic resistance gradient sensor chip is measured is:
Gradient HZ=（HZ1-HZ2）/Lg=Vout/(Lg*SXZ*S) （4）
Visible Z axis magnetic field gradient is proportional to the output signal of magneto-resistor Z axis half-bridge gradient sensor chip.
Above-mentioned Lg refers to the distance between two or two groups of flux guide devices, also claims Gradient Features distance.
Embodiment tri-
Fig. 5-7 are the structural representation of full bridge structure gradient sensor chip and the electrical connection graph of corresponding five kinds of magneto-resistor unit thereof.In Fig. 5, flux guide device A1 and B1 be corresponding position Y1 separately, Y2 is by occupied by four the corresponding magneto-resistor of brachium pontis unit 3 (7)-3 (10) of full-bridge respectively, wherein in Fig. 6, two half-bridges of full-bridge corresponding flux guide device A1 and B1 respectively, there is identical magnetic-field-sensitive direction at the Y1 of each flux guide device and the magneto-resistor unit of Y2 position, and the magneto-resistor unit of two brachium pontis that are connected with electrode has identical magnetic-field-sensitive direction.The output signal of the full bridge structure gradient sensor chip shown in Fig. 5 is suc as formula shown in (5)-(7), the Z axis magnetic field gradient of measurement as the formula (8):
V-=HX1*S-（-HX1）*S=2*HX1*S （5）
V+=HX2*S-（-HX2）*S=2*HX2*S （6）
Vout=V+-V-=2*SXZ*S*（HZ1-HZ2） （7）
Gradient HZ=（HZ1-HZ2）/Lg=Vout/(2*Lg*SXZ*S) （8）
Shown in Fig. 7, corresponding two brachium pontis of two half-bridges of full-bridge correspond respectively to same position Y1 or the Y2 in two flux guide device A1 and B1, and have identical magnetic-field-sensitive direction, the magneto-resistor unit of two brachium pontis that are connected with same electrode is positioned at the diverse location of same flux guide device.The output signal of the full bridge structure gradient sensor chip shown in Fig. 7 is suc as formula shown in (9)-(11), the Z axis magnetic field gradient of measurement as the formula (12):
V-=HX1*S-HX2*S （9）
V+=-HX1*S-（-HX2）*S （10）
Vout=V+-V-=-2*SXZ*S*（HZ2-HZ1）（11）
Gradient HZ=（HZ1-HZ2）/Lg=-Vout/(2*Lg*SXZ*S) （12）
Embodiment tetra-
Fig. 8-13 are depicted as Z axis gradient sensor and the electrical connection graph thereof of multiple flux guide devices, the integer that multiple flux guide device numbers are 2*N(N>1) individual, and be divided into two groups, be A group and B group, corresponding to 2(11) and 2(12), and being arranged in the array that two row one are listed as, its line direction is Y direction, column direction is X-direction, and the line space of two groups is Lg.In addition, A group and the each self-contained N of a B group flux guide device, wherein N flux guide device numbering of A group corresponds to respectively 2 (11)-1 ~ 2 (11)-N, N flux guide device numbering of B group corresponds to respectively 2(12)-1 ~ 2 (12)-N, and be all arranged in the capable array structure of N, the distance between row becomes Gradient Features group spacing Ls, wherein, Ls is much smaller than Lg, corresponding two the position Y1 of same each flux guide device and Y2.
Be similar to two flux guide device structure Z axis gradient sensor chips, many group flux guide device Z axis gradient sensor structures also can be divided into half-bridge and two kinds of structures of full-bridge, and corresponding one by one with bilateral amount guide Z axis gradient sensor chip respectively, difference is, in bilateral amount guide Z axis gradient sensor chip, each brachium pontis is corresponding to Y1 or the Y2 position of flux guide device A or B, and for many flux guide device Z axis gradient sensor chip, each brachium pontis is corresponding to N flux guide device A1-AN in A group or B group or the corresponding Y1 of B1-BN or Y2 position.
Fig. 8-9 are many flux guide of half-bridge structure device Z axis gradient sensor chip and electrical connection graph thereof, wherein, form two the corresponding magneto-resistor of brachium pontis unit of half-bridge and correspond respectively to same position Y1 or the Y2 in N flux guide device of A group and N flux guide device that B organizes, and there is identical magnetic-field-sensitive direction.
The full bridge structure of as much flux guide device Z axis gradient sensor also has 2 kinds.
Figure 10-12 are hyperchannel guide Z axis gradient sensor and the structural drawing thereof of full bridge structure, and four brachium pontis that form full-bridge in Figure 10 lay respectively at N flux guide device of A group and N flux guide device that B organizes separately on corresponding two position Y1 and Y2.
The first magneto-resistor unit connects as shown in figure 11, two half-bridges of full-bridge correspond respectively to the Y1/Y2 position of N flux guide device of A group, or the Y1/Y2 position of N flux guide device of B group, and the magneto-resistor unit that is positioned at Y1 or Y2 position has identical magnetic-field-sensitive direction, and two brachium pontis that are connected from same electrode are positioned at same position Y1 or the Y2 of A/B or the different flux guide device of B/A group.
The second magneto-resistor unit connects as shown in figure 12, in two half-bridges of full-bridge, the corresponding brachium pontis of arbitrary half-bridge corresponds respectively to same position Y1 or the Y2 of N flux guide device of two groups of flux guide devices, and have identical magnetic-field-sensitive direction, two brachium pontis that are connected with same electrode are positioned at the diverse location of same group of flux guide device.
The no matter magneto-resistor Z axis gradient sensor chip of bilateral amount guide or many flux guide device type, in full-bridge or half-bridge structure, position Y1 or the Y2 of corresponding same flux guide device, there is multiple magneto-resistors unit, between these magneto-resistor unit, can form cascaded structure as Figure 13 (a), also can form parallel-connection structure as Figure 13 (b), or form connection in series-parallel mixed structure, in the magneto-resistor Z axis gradient sensor of bilateral amount guide, Y1 or the Y2 position of the corresponding flux guide device of each brachium pontis, therefore, these magneto-resistor unit pass through series connection in Y1 or Y2 position, in parallel or mixing connection in series-parallel finally forms two-port structure, form a brachium pontis.
For full-bridge or the half-bridge structure of many flux guide device structure, brachium pontis is corresponding to same X or the Y position of N flux guide device in A group or B group, therefore, except X or the locational series connection of Y, in parallel or go here and there and mixes and connect outside, also comprise N the series connection between flux guide device, parallel connection or mixing connection in series-parallel, a two-port structure of final formation, forms a brachium pontis.
In addition, for the Z axis gradient sensor chip of half-bridge structure or full bridge structure, each brachium pontis has identical magneto-resistor element number, and its connection in series-parallel electric connection structure in flux guide device is also identical.
Embodiment five
Figure 14 is the structural drawing that magneto-resistor Z axis sensor chip is applied to Hard Magnetic image recognition, comprise PCB 6 and magneto-resistor Z axis gradient sensor chip 100, magneto-resistor Z axis gradient sensor chip 100 is positioned on PCB 6, and Hard Magnetic magnetic picture 7 is positioned in the magnetic picture detection faces that is parallel to chip surface, the Z axis magnetic-field component of Hard Magnetic magnetic picture 7 is detected by magneto-resistor Z axis gradient sensor chip 100, thereby magnetic picture 7 is identified, now magneto-resistor Z axis gradient sensor chip requires to have high magnetic field sensitivity, and its Z-direction magnetic-field measurement scope is greater than the Z-direction magnetic field that Hard Magnetic magnetic picture 7 produces.
Embodiment six
Figure 15 is magneto-resistor Z axis gradient sensor chip application in soft magnetism image recognition or is applied to the structural drawing of gear sensor, comprise PCB 6 and back of the body magnetic patch 8, magneto-resistor Z axis gradient sensor chip 100 is positioned on PCB 6, and back of the body magnetic patch 8 is positioned at PCB 6 back sides, and the direction of magnetization of back of the body magnetic patch 8 is perpendicular to PCB 6, along Z-direction, soft magnetic property image 7 ' is positioned on the face that is parallel to magneto-resistor Z axis sensor chip 100, now magneto-resistor Z axis gradient sensor chip requires to have high magnetic field sensitivity, and its Z-direction magnetic-field measurement scope is greater than the Z-direction magnetic field that back of the body magnetic patch 8 produces.
Embodiment seven
Figure 16 is the mounting structure schematic diagram of magneto-resistor Z axis gradient sensor chip, in the time being applied to magnetic head of cash inspecting machine, also comprise PCB 6, back of the body magnetic patch 8 and encapsulating shell 200, magneto-resistor Z axis gradient sensor chip 100 is arranged on PCB 6, back of the body magnetic patch 8 is positioned at PCB 6 back sides, PCB 6 and magneto-resistor Z axis gradient sensor chip 100 are arranged in encapsulating shell 200, encapsulating shell 200 comprises mounting bracket 9, contact pin electrode 12, magneto-resistor Z axis gradient sensor chip 100 is designed to have saturation magnetic field and the highfield sensitivity higher than the back of the body magnetic patch 8 Z-direction magnetic field that produces.
The foregoing is only preferred embodiment of the present utility model, be not limited to the utility model, for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection domain of the present utility model.
Claims (20)
1. a magneto-resistor Z axis gradient sensor chip, for surveying Z-direction magnetic-field component that magnetic medium the produces gradient in XY plane, is characterized in that, described magneto-resistor Z axis gradient sensor chip comprises:
Si substrate, be positioned at magneto-resistor sensing unit that electrical interconnection on described Si substrate becomes full-bridge gradiometer or half-bridge gradiometer, be positioned at two or two groups of flux guide devices on described Si substrate; Described magneto-resistor sensing unit be positioned at described flux guide device above or below, and have the sensitive direction that is parallel to described Si substrate surface, described flux guide device is transformed into along the sensitive direction of described magneto-resistor sensing unit for the Z-direction magnetic-field component that described magnetic medium is produced;
Described every group of flux guide device comprises at least two flux guide devices, and the spacing between described two or two groups of flux guide devices is Lg, and in described full-bridge gradiometer or half-bridge gradiometer, the spacing between brachium pontis is Lg relatively.
2. a kind of magneto-resistor Z axis gradient sensor chip according to claim 1, is characterized in that, described magneto-resistor sensing unit is GMR and/or TMR sensing unit.
3. a kind of magneto-resistor Z axis gradient sensor chip according to claim 1, is characterized in that, described flux guide device is the magnetically soft alloy that is selected from one or more the element compositions in Co, Fe and Ni.
4. a kind of magneto-resistor Z axis gradient sensor chip according to claim 1, is characterized in that, described flux guide device is elongate in shape, its long axis Y direction, and minor axis is along X-direction, and its length L y is greater than its width Lx and thickness Lz.
5. a kind of magneto-resistor Z axis gradient sensor chip according to claim 4, is characterized in that, described magneto-resistor sensing unit is less than or equal to 1/3*Lx to the vertical range of the Y direction center line of corresponding described flux guide device.
6. a kind of magneto-resistor Z axis gradient sensor chip according to claim 4, it is characterized in that, the position of described magneto-resistor sensing unit is larger to the vertical range of described Y direction center line, or the thickness Lz of described flux guide device is larger, or the width Lx of described flux guide device is less, the magnetic field sensitivity of described magneto-resistor sensing unit is higher.
7. a kind of magneto-resistor Z axis gradient sensor chip according to claim 4, is characterized in that, comprises two described flux guide devices, is arranged in the array that two row one are listed as, and its line direction is Y direction, and column direction is X-direction.
8. a kind of magneto-resistor Z axis gradient sensor chip according to claim 7, it is characterized in that, two brachium pontis in described half-bridge gradiometer correspond respectively to described two flux guide devices, described two brachium pontis are positioned at the same position of the same side of the Y-axis center line of corresponding flux guide device, and the described magneto-resistor sensing unit on two described brachium pontis has identical sensitive direction.
9. a kind of magneto-resistor Z axis gradient sensor chip according to claim 7, it is characterized in that, two half-bridges in described full-bridge gradiometer correspond respectively to described two flux guide devices, two brachium pontis of each described half-bridge are symmetrically distributed in the Y-axis center line both sides of corresponding flux guide device, two brachium pontis that are connected with same power electrode are positioned at the same position of the same side of the Y-axis center line of corresponding flux guide device, and the described magneto-resistor sensing unit in described full-bridge gradiometer has identical sensitive direction.
10. a kind of magneto-resistor Z axis gradient sensor chip according to claim 7, it is characterized in that, in two half-bridges of described full-bridge gradiometer, two brachium pontis of arbitrary half-bridge lay respectively at the same position of the same side of the Y-axis center line of two flux guide devices, the corresponding same flux guide device of two brachium pontis being connected with same power electrode and the Y-axis center line both sides that are symmetrically distributed in this flux guide device, the described magneto-resistor sensing unit in described full-bridge gradiometer has identical sensitive direction.
11. a kind of magneto-resistor Z axis gradient sensor chips according to claim 4, it is characterized in that, it is individual that every group of flux guide device is 2*N (N>1), the array that described two groups of flux guide devices become two row one to be listed as, and line direction is along Y direction, and column direction is X-direction; Every group of array that flux guide device becomes N capable to be listed as, line direction is along Y direction, and column direction is X-direction; Line space Ls between every group of flux guide device is much smaller than Lg.
12. a kind of magneto-resistor Z axis gradient sensor chips according to claim 11, it is characterized in that, N flux guide device of the respectively corresponding described two groups of flux guide devices of the magneto-resistor sensing unit on two brachium pontis of described half-bridge gradiometer, and the magneto-resistor sensing unit on described two brachium pontis is positioned at the same position of the same side of the Y-axis center line of corresponding flux guide device, and described magneto-resistor sensing unit has same sensitive direction.
13. a kind of magneto-resistor Z axis gradient sensor chips according to claim 11, it is characterized in that, the magneto-resistor sensing unit of two half-bridges in described full-bridge gradiometer corresponds respectively to N flux guide device of described two groups of flux guide devices, the magneto-resistor sensing unit of two brachium pontis of each described half-bridge is symmetrically distributed in the Y-axis center line both sides of corresponding flux guide device, the magneto-resistor sensing unit of two brachium pontis that are connected with same power electrode respectively corresponding described two groups of flux guide devices N flux guide device and be positioned at the same position of the same side of the Y-axis center line of corresponding flux guide device, the magneto-resistor sensing unit of described full-bridge gradiometer has same sensitive direction.
14. a kind of magneto-resistor Z axis gradient sensor chips according to claim 11, it is characterized in that, in two half-bridges of described full-bridge gradiometer the magneto-resistor sensing unit of two brachium pontis of any half-bridge correspond respectively in two groups of flux guide devices N flux guide device and be positioned at the same position of the same side of the Y-axis center line of corresponding flux guide device, the corresponding same group of flux guide device of magneto-resistor sensing unit of two brachium pontis that are connected with same power electrode N flux guide device and be symmetrically distributed in the Y-axis center line both sides of corresponding flux guide device, the magneto-resistor sensing unit of described full-bridge gradiometer has identical sensitive direction.
15. a kind of magneto-resistor Z axis gradient sensor chips according to claim 1, it is characterized in that, described in each, the quantity of the magneto-resistor sensing unit of brachium pontis is identical, and magneto-resistor sensing unit series, parallel or mixing connection in series-parallel electrical interconnection become two-port structure, and described brachium pontis all has same electrical interconnection structure.
16. a kind of magneto-resistor Z axis gradient sensor chips according to claim 1, is characterized in that, described magneto-resistor Z axis gradient sensor chip is electrically connected with PCB by Bonding mode or silicon wafer through hole (TSV).
17. a kind of magneto-resistor Z axis gradient sensor chips according to claim 1, it is characterized in that, described magneto-resistor Z axis gradient sensor chip is installed on a PCB, the Z-direction magnetic-field component producing for detection of permanent magnetism magnetic medium, described magneto-resistor Z axis gradient sensor chip has the saturation magnetic field in the Z-direction magnetic field producing higher than described permanent magnetism magnetic medium.
18. a kind of magneto-resistor Z axis gradient sensor chips according to claim 1, it is characterized in that, described magneto-resistor Z axis gradient sensor chip is arranged on a PCB, the described PCB back side is provided with a permanent magnet for generation of the magnetic field perpendicular to described magneto-resistor Z axis gradient sensor chip, and described magneto-resistor Z axis gradient sensor chip has the saturation magnetic field in the Z-direction magnetic field that is greater than described permanent magnet generation.
19. a kind of magneto-resistor Z axis gradient sensor chips according to claim 1, it is characterized in that, described magneto-resistor Z axis gradient sensor chip is arranged on a PCB, the described PCB back side is provided with a permanent magnet for generation of the magnetic field perpendicular to described magneto-resistor Z axis gradient sensor chip, described PCB is positioned in an encapsulating shell, described encapsulating shell comprises a mounting bracket, be positioned at the contact pin electrode at back, described PCB and described magneto-resistor Z axis gradient sensor chip are arranged in described mounting bracket, described magneto-resistor Z axis gradient sensor chip has the saturation magnetic field in the Z-direction magnetic field producing higher than described permanent magnet.
20. according to a kind of magneto-resistor Z axis gradient sensor chip described in any one in claim 1 to 19, it is characterized in that, the sensitive direction of described magneto-resistor sensing unit is X-direction.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103995240A (en) * | 2014-05-30 | 2014-08-20 | 江苏多维科技有限公司 | Magnetic resistance Z-axis gradient sensor chip |
| EP3290932A4 (en) * | 2015-04-27 | 2019-02-20 | Multidimension Technology Co., Ltd. | Integrated current sensor using z-axis magnetoresistive gradiometer and lead frame current |
-
2014
- 2014-05-30 CN CN201420287275.3U patent/CN203894395U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103995240A (en) * | 2014-05-30 | 2014-08-20 | 江苏多维科技有限公司 | Magnetic resistance Z-axis gradient sensor chip |
| WO2015180568A1 (en) * | 2014-05-30 | 2015-12-03 | 江苏多维科技有限公司 | Magneto-resistive z-axis gradient sensor chip |
| US11536779B2 (en) | 2014-05-30 | 2022-12-27 | MultiDimension Technology Co., Ltd. | Magnetoresistive Z-axis gradient sensor chip |
| EP3290932A4 (en) * | 2015-04-27 | 2019-02-20 | Multidimension Technology Co., Ltd. | Integrated current sensor using z-axis magnetoresistive gradiometer and lead frame current |
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