CN208689155U - Triaxial magnetic field sensor - Google Patents
Triaxial magnetic field sensor Download PDFInfo
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- CN208689155U CN208689155U CN201820970160.2U CN201820970160U CN208689155U CN 208689155 U CN208689155 U CN 208689155U CN 201820970160 U CN201820970160 U CN 201820970160U CN 208689155 U CN208689155 U CN 208689155U
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- magnetic field
- field sensor
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- guiding device
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Abstract
The utility model relates to a kind of triaxial magnetic field sensors.The utility model includes X/Y double-axis magnetic field sensor and Z axis magnetic field sensor.X/Y double-axis magnetic field sensor and Z axis magnetic field sensor are respectively provided on substrate, and X/Y double-axis magnetic field sensor is adjacent with Z axis magnetic field sensor position；Two groups of wheatstone bridge configurations of X/Y double-axis magnetic field sensor form two outputs, realize the magnetic-field measurement of X/Y axis.Z axis magnetic field sensor generates the different horizontal component leakage field magnetic field of both direction, is perceived and exported by electric bridge, realize Z axis magnetic-field measurement under Z axis magnetic fields.The utility model can realize that single is integrated, and triaxial magnetic field sensor can realize the integrated of single technique level, i.e., all mistor units can be made simultaneously in same technique, and integrated level is high, stability is good, strong antijamming capability.
Description
Technical field
The utility model belongs to magnetic field sensor technical field, is related to a kind of triaxial magnetic field sensor.
Background technique
Giant magneto-resistance sensor (GMR) is a kind of novel magnetic power inhibition effect sensor to grow up after 1988, its benefit
It is the giant magnetoresistance effect of Researches for Magnetic Multilayer Films, magnetic field sensor is compared to anisotropic magnetoresistance made of GMR
(AMR), hall device has sensitivity higher, and power consumption is lower, linear more preferable, dynamic range is wider, temperature characterisitic is more preferable, anti-does
Disturb the advantages that ability is stronger.Furthermore GMR is easy integrated with microelectronic technique, convenient for the very high magnetic field sensor of integrated level is made.
The technology of triaxial magnetic field sensor usually integrates the encapsulation of three magneto-dependent sensors at present, survey respectively X-axis,
Y-axis, Z axis magnetic-field component.The technical method complex process, volume is big, packaging cost is high, and stability and reliability are bad.Than
If 102426344 B of patent CN is using the scheme that three identical sensor encapsulation is integrated, a magnetic field sensor is quick
Feel axis to place along X-axis, another magnetic field sensor sensitive axes is placed along Y-axis, and Z axis magnetic field sensor vertical plane is placed to carry out
Measurement；The magnetic sensor of patent CN102292773 B is realized by controlling material pinning direction and magnetic layer respectively
Measure three-axle magnetic field；The technology of 20120299587 A1 of patent US is to measure plane inner field using magnetic resistance, is passed with Hall
Sensor measures Z axis magnetic field.US20150309125 A1 is that multiple magnetic induction units are arranged on the slope, and magnetic field can be by feeling
Survey unit measurement.Algorithm be may then pass through to solve the three of magnetic field orthogonal axis components.The above patent exist complex process,
Realize the problems such as more difficult, three-axis sensor sensitivity difference is larger.The utility model will overcome the shortcomings of the above sensor,
Device size is small, preparation process is simple.
Summary of the invention
The purpose of this utility model is just to provide a kind of triaxial magnetic field sensor.
The utility model it include X/Y double-axis magnetic field sensor and Z axis magnetic field sensor.X/Y double-axis magnetic field sensor and Z
Axis magnetic field sensor is respectively provided on substrate, and X/Y double-axis magnetic field sensor is adjacent with Z axis magnetic field sensor position；For measuring
Three-axle magnetic field.
X/Y double-axis magnetic field sensor includes twin shaft magnetic flux guiding device.Twin shaft magnetic flux guiding device is arranged on substrate, twin shaft magnetic
Logical guiding device external frame is that side's annular or cirque structure, two diagonal lines or two vertical symmetry axis draw twin shaft magnetic flux
It leads device and is divided into four regions；Each region is provided with mistor and places gap.Each region is provided with a pair of of mistor, magnetic
Quick resistance is respectively provided on substrate, and a mistor is covered by twin shaft magnetic flux guiding device, and another mistor is arranged in magnetosensitive
Resistance is placed in gap.Two pairs of mistors for detecting magnetic field in the same direction are linked to be one group of wheatstone bridge configuration, two groups of favour stone electricity
Bridge forms two outputs；X-axis and Y-axis magnetic-field component are measured respectively.
The Z axis magnetic field sensor includes uniaxial magnetic flux guiding device and two pairs of mistors, two pairs of mistor difference
Two opposite side of uniaxial magnetic flux guiding device are set, and the sensitive axes of each mistor are vertical with installation side.Two pairs of mistors connect
At one group of wheatstone bridge configuration, an output is formed, measures Z axis magnetic-field component.
Under Z axis magnetic fields, uniaxial magnetic flux guiding device both sides edge generates the leakage with different directions horizontal component
Magnetic field is located at mistor sensitive in two opposites of two sides and is perceived, and exported by Wheatstone bridge.
Preferably, the Z axis magnetic field sensor is placed on the annular twin shaft magnetic flux guidance of X/Y double-axis magnetic field sensor
The ring-shaped inner part of device.
The mistor places the both sides in gap and trimming is in be greater than 0 ° of inclination angle less than 90 °；
The substrate is silicon substrate.
The mistor is anisotropic magnetoresistance, giant magnetoresistance resistance, magnetic tunnel-junction resistance.
The magnetic flux guiding device is made of the soft magnetic materials with high permeability.
The wheatstone bridge circuits are connected by metal wire, and can be with silicon substrate integrated signal processing circuit original part phase
Even or on silicon wafer realize that single is integrated.
The Wheatstone bridge is Wheatstone bridge full bridge structure or Wheatstone bridge half-bridge structure.
The triaxial magnetic field sensor that the utility model technology obtains can realize that single is integrated, and triaxial magnetic field sensor can be realized
Single technique level integrates, i.e., all mistor units can be made simultaneously in same technique, and integrated level is high, steady
Qualitative good, strong antijamming capability.
Detailed description of the invention
Fig. 1 is the overall structure diagram of the utility model embodiment one；
Fig. 2 is the overall structure diagram of the utility model embodiment two
Fig. 3 is the circuit diagram of Wheatstone bridge full bridge structure in the utility model embodiment；
Fig. 4 is the output simulation curve figure of Wheatstone bridge in embodiment；
Fig. 5 is the wheatstone bridge configuration of Z axis magnetic field sensor；
Fig. 6 is magnetic-field component simulation curve of the Z-direction external magnetic field of Z axis magnetic field sensor in face.
Specific embodiment
A kind of triaxial magnetic field sensor, including X/Y double-axis magnetic field sensor and Z axis magnetic field sensor.X/Y twin shaft magnetic field
Sensor and Z axis magnetic field sensor are respectively provided on substrate, X/Y double-axis magnetic field sensor and Z axis magnetic field sensor position phase
It is adjacent；For measuring three-axle magnetic field.
X/Y double-axis magnetic field sensor includes twin shaft magnetic flux guiding device 1.Twin shaft magnetic flux guiding device 1 is arranged on substrate, twin shaft
1 external frame of magnetic flux guiding device is side's annular or cirque structure, two diagonal lines or two vertical symmetry axis by twin shaft magnetic
Logical guiding device 1 divides for four regions；Each region is provided with identical mistor and places gap 2.Each region is provided with one
To mistor, mistor 3 is respectively provided on substrate, and a mistor is covered by twin shaft magnetic flux guiding device, another magnetosensitive
Resistance setting is placed in gap in mistor.Two pairs of mistors for detecting magnetic field in the same direction are linked to be one group of Wheatstone bridge knot
Structure, two groups of Wheatstone bridges form two outputs；X-axis and Y-axis magnetic-field component are measured respectively.
Z axis magnetic field sensor includes that uniaxial magnetic flux guiding device 4 and two pairs of mistors 3, two pairs of mistors are respectively set
In two opposite side of uniaxial magnetic flux guiding device 4.Two pairs of mistors are linked to be one group of wheatstone bridge configuration, form an output, survey
Measure Z axis magnetic-field component.
Magnetic flux guiding device is generally ferronickel, ferro-silicium (silicon steel sheet) or various soft magnetic ferrites etc. with high permeability
Soft magnetic materials.
As shown in Figure 1, Z axis magnetic field sensor is placed on the annular twin shaft magnetic of X/Y double-axis magnetic field sensor in embodiment one
The outside of logical guiding device 1.
As shown in Fig. 2, Z axis magnetic field sensor is placed on the annular twin shaft magnetic of X/Y double-axis magnetic field sensor in embodiment two
Lead to the inside of guiding device 1, twin shaft magnetic flux guiding device 1 can shield horizontal magnetic field for Z axis magnetic field sensor in this structure
Interference.
In the structure of two embodiments, X/Y double-axis magnetic field sensor includes eight mistors 3, and twin shaft magnetic flux draws
It leads device 1 and uses square ring structure, be provided with a pair of of mistor in each edge, while being provided with mistor in each edge
Place gap 2；One mistor is covered by twin shaft magnetic flux guiding device 1, and another mistor is arranged in twin shaft magnetic flux guiding device
On the mistor that is provided with place in gap 2.
According to the vertical structure in square both sides, it is known that two pairs of opposite side measure X-axis and Y-axis magnetic-field component respectively.Such as Fig. 3 institute
Show, four mistors of two opposite side are linked to be the identical Wheatstone bridge full-bridge of two groups of structures respectively.
It is placed in the mistor that mistor is placed in gap 3 on one side and is denoted as the first mistor R1, another magnetosensitive electricity
Resistance is denoted as the second mistor R2；It is placed in the mistor that mistor is placed in gap 3 on opposite side and is denoted as third mistor
R3, another mistor are denoted as the 4th mistor R4.One end of one end of the first mistor R1 and the second mistor R2
Connection is followed by VCC input power；One end of third mistor R3 is grounded after connecting with one end of the 4th mistor R4.The
The other end of one mistor R1 is used as an output end vo ut after connecting with the other end of the 4th mistor R4+；Second magnetic
The other end of quick resistance R2 is used as another output Vout after connecting with the other end of third mistor R3-；Two outputs
End forms difference output.
Two groups of Wheatstone bridge full-bridges form two difference outputs.
The output simulation curve of two groups of wheatstone bridge configurations is as shown in Figure 4.By mistor on twin shaft magnetic flux guiding device 1
It places and is used as test point at gap 2, a pair on 1 opposite side of twin shaft magnetic flux guiding device is placed on mistor and places gap 2
The X/Y axis magnetic-field component that interior mistor detects is identical, on X/Y axis two magnetic strength components of test point with external magnetic field angle
Variation is in SIN function relationship change, and the two shows orthogonality relation, by the difference for analyzing two groups of wheatstone bridge configurations
Output, thus measures the magnetic-field component of X/Y axis both direction, and original signal magnetic field strength and direction is calculated.
As shown in figure 5, four mistor R9~R12 of Z axis magnetic field sensor are linked to be plug-type wheatstone bridge configuration,
The same side of uniaxial magnetic flux guiding device 4 is arranged in mistor R9, R10, and the setting of other two mistor is in the side
Opposite side.Two groups of mistors of uniaxial 4 two sides of magnetic flux guiding device of Z axis magnetic field sensor under vertical signal magnetic fields,
Leakage field magnetic-field component direction is different in face caused by the magnetic flux guiding device experienced, thus generates different signal intensities.
As shown in fig. 6, the simulation curve of Z axis magnetic field sensor demonstrates under Z axis magnetic fields, guided in uniaxial magnetic flux
The leakage field component direction on 4 structural edge both sides of device is different.Two mistor R9, R10s ipsilateral positioned at uniaxial magnetic flux guiding device 4
Or R11, R12 will experience identical leakage field magnetic-field component.Under Z axis magnetic fields, if a pair of of mistor magnetoelectricity on one side
Resistance increases, and the magneto-resistor of opposite side a pair of mistor will reduce, therefore generation difference is defeated in plug-type wheatstone bridge configuration
Out, so analyze Z axis signal magnetic field size.When the soft magnetism shielded layer of the outer end setting in the uniaxial magnetic flux guiding device 4, such as
Shown in the structure of embodiment two, interference of the plane inner field to Z axis magnetic-field measurement can be further reduced.
It is obvious to a person skilled in the art that the utility model technology is not limited to the thin of above-mentioned exemplary embodiment
Section, and without departing substantially from the spirit or essential attributes of the utility model technology, it can be real in other specific forms
Existing the utility model technology.It therefore, in all respects, the embodiments should be taken as exemplary, and is non-limit
Property processed, the range of the utility model technology is indicated by the appended claims rather than the foregoing description, it is intended that power will be fallen in
All changes in the meaning and scope for the equivalency that benefit requires are included in the utility model technology.It should not be by claim
In any appended drawing reference be construed as limiting the claims involved.
Claims (8)
1. triaxial magnetic field sensor, including X/Y double-axis magnetic field sensor and Z axis magnetic field sensor；It is characterized by: the X/
Y double-axis magnetic field sensor and Z axis magnetic field sensor are respectively provided on substrate, X/Y double-axis magnetic field sensor and Z axis magnetic field sensor
Position is adjacent；For measuring three-axle magnetic field；
The X/Y double-axis magnetic field sensor includes twin shaft magnetic flux guiding device；Twin shaft magnetic flux guiding device is arranged on substrate, twin shaft
Magnetic flux guiding device external frame is side's annular or cirque structure, two diagonal lines or two vertical symmetry axis by twin shaft magnetic flux
Guiding device is divided into four regions；Each region is provided with mistor and places gap；Each region is provided with a pair of of mistor,
Mistor is respectively provided on substrate, and a mistor is covered by twin shaft magnetic flux guiding device, and another mistor is arranged in magnetic
Quick resistance is placed in gap；Two pairs of mistors for detecting magnetic field in the same direction are linked to be one group of wheatstone bridge configuration, two groups of favour stones
Electric bridge forms two outputs；X-axis and Y-axis magnetic-field component are measured respectively；
The Z axis magnetic field sensor includes that uniaxial magnetic flux guiding device and two pairs of mistors, two pairs of mistors are respectively set
In two opposite side of uniaxial magnetic flux guiding device；Two pairs of mistors are linked to be one group of wheatstone bridge configuration, form an output, measurement
Z axis magnetic-field component；Under Z axis magnetic fields, uniaxial magnetic flux guiding device both sides edge, which generates, has different directions horizontal component
Magnetic flux leakage, be located at mistor sensitive in two opposites of two sides and perceived, and exported by Wheatstone bridge.
2. triaxial magnetic field sensor as described in claim 1, it is characterised in that: the Z axis magnetic field sensor is placed on X/Y
The ring-shaped inner part of the annular twin shaft magnetic flux guiding device of double-axis magnetic field sensor.
3. triaxial magnetic field sensor as described in claim 1, it is characterised in that: the mistor places the both sides in gap
It is in be greater than 0 ° of inclination angle less than 90 ° with trimming.
4. triaxial magnetic field sensor as described in claim 1, it is characterised in that: the substrate is silicon substrate.
5. triaxial magnetic field sensor as described in claim 1, it is characterised in that: the mistor is anisotropy magnetoelectricity
Resistance, giant magnetoresistance resistance, magnetic tunnel-junction resistance.
6. triaxial magnetic field sensor as described in claim 1, it is characterised in that: the magnetic flux guiding device is with high magnetic conduction
The soft magnetic materials of rate is made.
7. triaxial magnetic field sensor as described in claim 1, it is characterised in that: the wheatstone bridge circuits pass through metal
Line is connected, and can be connected with silicon substrate integrated signal processing circuit original part or realize that single is integrated on silicon wafer.
8. triaxial magnetic field sensor as described in claim 1, it is characterised in that: the Wheatstone bridge is Wheatstone bridge
Full bridge structure or Wheatstone bridge half-bridge structure.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820970160.2U CN208689155U (en) | 2018-06-22 | 2018-06-22 | Triaxial magnetic field sensor |
| US16/476,270 US11579209B2 (en) | 2018-06-22 | 2018-10-22 | Three-axis magnetic sensor |
| PCT/CN2018/111130 WO2019242175A1 (en) | 2018-06-22 | 2018-10-22 | A three-axis magnetic sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820970160.2U CN208689155U (en) | 2018-06-22 | 2018-06-22 | Triaxial magnetic field sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208689155U true CN208689155U (en) | 2019-04-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820970160.2U Withdrawn - After Issue CN208689155U (en) | 2018-06-22 | 2018-06-22 | Triaxial magnetic field sensor |
Country Status (1)
| Country | Link |
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| CN (1) | CN208689155U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108919147A (en) * | 2018-06-22 | 2018-11-30 | 钱正洪 | A kind of triaxial magnetic field sensor |
| CN110716162A (en) * | 2019-07-10 | 2020-01-21 | 杭州电子科技大学 | Vertical sensitive on-site feedback device on closed-loop core of magnetic sensor |
| WO2021040797A1 (en) * | 2019-08-27 | 2021-03-04 | Western Digital Technologies, Inc. | Magnetic sensor with serial resistor for asymmetric sensing field range |
-
2018
- 2018-06-22 CN CN201820970160.2U patent/CN208689155U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108919147A (en) * | 2018-06-22 | 2018-11-30 | 钱正洪 | A kind of triaxial magnetic field sensor |
| CN108919147B (en) * | 2018-06-22 | 2021-02-09 | 钱正洪 | Three-axis magnetic field sensor |
| CN110716162A (en) * | 2019-07-10 | 2020-01-21 | 杭州电子科技大学 | Vertical sensitive on-site feedback device on closed-loop core of magnetic sensor |
| CN110716162B (en) * | 2019-07-10 | 2024-05-03 | 杭州电子科技大学 | Vertical sensitive magnetic sensor closed-loop on-core on-site feedback device |
| WO2021040797A1 (en) * | 2019-08-27 | 2021-03-04 | Western Digital Technologies, Inc. | Magnetic sensor with serial resistor for asymmetric sensing field range |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CB03 | Change of inventor or designer information |
Inventor after: Qian Zhenghong Inventor after: Bai Ru Inventor before: Qian Zhenghong Inventor before: Bai Ru Inventor before: Hu Liang |
|
| CB03 | Change of inventor or designer information | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20190402 Effective date of abandoning: 20210209 |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20190402 Effective date of abandoning: 20210209 |
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| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |