CN117054936B - Gradient sensor - Google Patents
Gradient sensor Download PDFInfo
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- CN117054936B CN117054936B CN202311316681.8A CN202311316681A CN117054936B CN 117054936 B CN117054936 B CN 117054936B CN 202311316681 A CN202311316681 A CN 202311316681A CN 117054936 B CN117054936 B CN 117054936B
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- 230000006698 induction Effects 0.000 claims abstract description 70
- 230000035945 sensitivity Effects 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000004088 simulation Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/022—Measuring gradient
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
Abstract
The application provides a gradient sensor. The gradient sensor includes: the linear magnetic induction unit on the substrate is arranged, the M-axis magnetic field guiding gathering structure is respectively arranged on the left side and the right side of the magnetic induction unit along the X-axis direction, and the M-axis is a Y-axis or a Z-axis. The M-axis magnetic field guiding and gathering structure is L-shaped and consists of a magnetic field gathering part and a magnetic field guiding part, wherein the magnetic field gathering part extends along a parallel/antiparallel X axis to serve as the bottom of the L-shaped magnetic field gathering part, and the magnetic field guiding part extends along the parallel M axis, guides a magnetic field in the direction of the M axis and then guides the magnetic induction unit through the magnetic field gathering part; the sensitive direction of the magnetic induction unit is parallel/antiparallel to the X-axis direction. The gradient sensor provided by the invention can directly output the magnetic field gradient only by using the magnetic induction unit without additionally arranging a calculation circuit/device, has low cost and compact structure, and is convenient for realizing sensitivity and zero field Offset (Offset) adjustment.
Description
Technical Field
The present application relates to the field of magnetic sensor technology, and in particular, to a gradient sensor for measuring magnetic field gradients.
Background
Magnetic sensors are widely used in modern electronic systems to measure physical parameters such as current, position, direction, etc. with the strength of an induced magnetic field. Currently, magnetic sensors are mainly classified into magnetic sensors using hall elements as sensing elements, and magnetic sensors using magnetoresistive elements (including AMR, GMR, and MTJ) as sensing elements.
The different types of magnetic sensors each have advantages and disadvantages as well as applicable scenarios and ranges. The magnetic sensor using the hall element as the sensitive element has low sensitivity, and usually needs to increase the magnetic field by adding a poly-magnetic ring structure to increase the sensitivity, so that the volume and the weight of the sensor are often increased, and meanwhile, the magnetic sensor using the hall element has large power consumption because current needs to flow at any time. Although the sensitivity of the magnetic sensor using the AMR element as a sensitive element is higher than that of the Hall element, the linear range is narrow; whereas GMR has a relatively low sensitivity, although its linear range is broad. In addition, for the magnetic sensor using AMR as a sensing element, a set/reset coil is required to be set at the same time to perform a preset-reset operation, which not only increases the size and power consumption, but also increases the complexity of the manufacturing process. The magnetic sensor using the magnetic induction unit element as the sensitive element has better temperature stability, higher sensitivity, lower power consumption and better linearity compared with the three magnetic sensors. However, the yield of the magnetic induction unit sensor depends on the offset value of the magnetic resistance output of the magnetic induction unit element, the magnetic resistance of the magnetic induction unit element forming the bridge is difficult to achieve high matching degree, and meanwhile, the manufacturing process of integrating the magnetic induction unit sensor on the same semiconductor substrate is very complex, which is the main reason why the magnetic induction unit sensor does not realize low-cost large-scale mass production.
The current gradient sensor mainly adopts a mode that corresponding magnetic resistance units are arranged on two points with known distance, and the magnetic resistance units are connected in a Wheatstone bridge/half bridge mode in a circuit and are used for measuring magnetic field intensity differences on different points. For a magnetic field gradient sensor, its output should be zero (OFFSET zero) when in a uniform magnetic field, which requires consistent performance parameters for the magnetoresistors located on the different legs. However, in practice, due to the problem of the manufacturing process of the magneto resistor, it is difficult to ensure that the deviation of the performance parameters is within the range meeting the requirements even for the magneto resistor in the same batch. Therefore, the gradient magnetic sensor at present often needs to specially arrange or design the magnetic resistance units on four bridge arms of the wheatstone bridge according to the magnetic field to be detected. In order to perform offset adjustment and sensitivity adjustment for existing magnetic field gradient sensors, complex offset (offset) adjustment circuits and sensitivity adjustment circuits often need to be integrated in the gradient sensor. Not only makes the design and manufacture of the gradient sensor more complex, but also increases the manufacture cost.
Disclosure of Invention
In view of this, the present application provides a gradient sensor that has low consistency in performance requirements between magnetoresistive elements, and in which the OFFset of the sensor and the sensitivity to the magnetic field gradient can be conveniently adjusted by adjusting the shape of the magnetic flux guide concentrator, without providing a special additional circuit for adjusting the zero-point OFFset and the sensitivity.
The gradient sensor provided by the invention comprises the following components in a composition structure: the linear magnetic induction unit on the substrate is arranged, M-axis magnetic field guiding and gathering structures are respectively arranged on the left side and the right side of the magnetic induction unit along the X-axis direction, the M axis is a Y axis or a Z axis, and the Z axis is perpendicular to the wafer surface. The M-axis magnetic field guiding and gathering structure is L-shaped as a whole and is integrally formed by the magnetic field gathering part and the magnetic field guiding part. The magnetic field collecting part extends along parallel/antiparallel to the X axis as an "L" shaped bottom, and the magnetic field guiding part extends along parallel M axis for guiding the magnetic field in the direction of M axis. The shape and/or size of the M-axis magnetic field guiding and gathering structure is determined in advance in a simulation environment of an M-axis uniform magnetic field, on the premise of ensuring that an output signal of the magnetic induction unit is within a required OFFset range and/or on the premise of ensuring a required sensitivity range. The magnetic field gathering part of the M-axis magnetic field guiding gathering structure on the left side of the magnetic induction unit extends to the right, and the magnetic field gathering part of the M-axis magnetic field guiding gathering structure on the right side extends to the left. The magnetic induction unit is basically positioned on the same plane with the magnetic field gathering parts of the M-axis magnetic field guiding gathering structures on the left side and the right side of the magnetic induction unit, and is used for measuring the intensity difference of components of the magnetic field on the straight line parallel to the X axis, which is derived from the magnetic field gathering parts of the M-axis magnetic field guiding gathering structures on the left side and the right side of the magnetic induction unit.
In one embodiment, the top of the magnetic field gathering portion is not higher than the bottom of the magnetic induction unit.
In another embodiment, the bottom of the magnetic field gathering part is not higher than the bottom of the magnetic induction unit itself, and the top of the magnetic field gathering part is not lower than the top of the magnetic induction unit.
Further, the magnetic induction unit is an XMR magnetoresistive unit including TMR, AMR, GMR, or a hall sensor. When the magnetic induction unit is an XMR magnetoresistive unit including TMR, AMR, GMR, the sensitive direction of the magnetic induction unit is parallel or antiparallel to the X-axis direction.
The gradient sensor provided by the invention directly outputs magnetic field gradient information by adopting the same magnetic induction unit, so that differences in zero offset, sensitivity, linear range and the like among different magnetic induction units are not needed to be considered. The gradient sensor with corresponding sensitivity and zero OFFset can be realized only by guiding the shape/size of the aggregation structure through the M-axis magnetic field. And based on the manufacturing method provided by the invention, the gradient sensor can realize equipment miniaturization and integration.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a gradient sensor according to a first embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a gradient sensor according to a second embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a gradient sensor according to a third embodiment of the present invention.
Detailed Description
The following description of the technical solutions in the embodiments of the present application will be clearly and completely described with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, as provided in the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, are intended to be within the scope of the present application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only to distinguish the description, and are not to be construed as indicating or implying relative importance.
As shown in fig. 1, the gradient sensor provided by the present invention includes: the linear magnetic induction units on the substrate are arranged, and M-axis magnetic field guiding and gathering structures are respectively arranged on the left side and the right side (along the X-axis direction) of the magnetic induction units, wherein the M axis is a Y axis or a Z axis (the situation that the M axis is the Y axis is not shown in fig. 1, and the situation is similar to the situation that the M axis is the Z axis). The M-axis magnetic field guiding and gathering structure is L-shaped and consists of a magnetic field gathering part and a magnetic field guiding part. The magnetic field collecting part extends along parallel/antiparallel to the X axis as an "L" shaped bottom, and the magnetic field guiding part extends along parallel M axis for guiding the magnetic field in the direction of M axis. The shape and/or the size of the M-axis magnetic field guiding and gathering structure are determined in advance in the simulation environment of the M-axis uniform magnetic field on the premise that the output signal of the magnetic induction unit is ensured to be in the required OFFset range and/or the required sensitivity range.
The magnetic field gathering part of the M-axis magnetic field guiding gathering structure on the left side of the magnetic induction unit extends to the right, and the magnetic field gathering part of the M-axis magnetic field guiding gathering structure on the right side extends to the left. The magnetic induction unit is basically positioned on the same plane with the magnetic field gathering parts of the M-axis magnetic field guiding gathering structures on the left side and the right side of the magnetic induction unit, and is used for measuring the intensity difference of components of the magnetic field on the straight line parallel to the X axis, which is derived from the magnetic field gathering parts of the M-axis magnetic field guiding gathering structures on the left side and the right side of the magnetic induction unit.
The working process of the gradient sensor comprises the following steps: the magnetic field guiding parts of the magnetic field guiding gathering structures of the left and right sides of the magnetic induction unit are used for guiding the magnetic fields of the M axes (Z axes in fig. 1) corresponding to the two measuring positions, and then the magnetic fields are twisted to the left and right sides of the magnetic induction unit through the magnetic field gathering parts. Because the magnetic field gathering part and the magnetic induction unit are basically positioned on the same plane, and the sensitive direction of the magnetic induction unit is parallel or antiparallel to the X-axis direction, the magnetic field intensity of the left side and the right side of the magnetic induction unit along the X-axis respectively reflects the intensity of the M-axis magnetic field or the M-axis magnetic field component at the two measuring positions. The output of the magnetic induction unit reflects the difference in the strength of the M-field or M-axis magnetic field component at the two measurement locations (i.e., the gradient of the M-field/M-axis magnetic field component at the two measurement locations). Obviously, the shape and/or the size of the M-axis magnetic field guiding gathering structure on the left side and the right side of the magnetic induction unit can be adjusted to guide the M-axis magnetic field, so that the required magnetic field intensity difference is gathered on the left side and the right side of the magnetic induction unit. Based on this, it is understood that the desired sensitivity and OFFset range OFFset can be obtained by adjusting the shape and/or size of the M-axis magnetic field guiding and collecting structure on the left and right sides of the magnetic induction unit.
Further, the magnetic induction unit is an XMR magnetoresistive unit including TMR, AMR, GMR, or a hall sensor. When the magnetic induction unit is an XMR magnetoresistive unit including TMR, AMR, GMR, the sensitive direction of the magnetic induction unit is parallel or antiparallel to the X-axis direction.
In a first implementation form, the top of the magnetic field gathering portion is not higher than the bottom of the magnetic induction unit. For example, in the embodiment shown in fig. 1, the M axis is the Z axis, and the top of the magnetic field collecting part is not higher than the bottom of the magnetic induction unit, or the top of the magnetic field collecting part and the bottom of the magnetic induction unit are located on the same XY plane.
In a second implementation form, the bottom of the magnetic field gathering part is not higher than the bottom of the magnetic induction unit itself, and the top of the magnetic field gathering part is not lower than the top of the magnetic induction unit. For example, in the embodiment shown in fig. 2, when the M axis is the Z axis, the bottom of the magnetic field collecting part is not higher than the bottom of the magnetic induction unit itself, and the top of the magnetic field collecting part is not lower than the top of the magnetic induction unit; alternatively, the bottom of the magnetic field gathering part and the bottom of the magnetic induction unit are located on the same XY plane, and the top of the magnetic field gathering part and the top of the magnetic induction unit are approximately flush.
Of course, the M-axis magnetic field guiding and collecting structure does not necessarily need to be strictly in an "L" shape, and only needs to be in an "L" shape (or an L-like shape) as a whole. As shown in fig. 3, the M-axis magnetic field guiding and focusing structure is in the form of locally deformed "L", but the whole structure is still in the form of "L".
In order to further reduce the alignment errors of the magnetic field gathering parts at the left side and the right side of the magnetic induction unit, the magnetic field gathering parts at the left side and the right side of the magnetic induction unit and the magnetic field gathering parts at the left side and the right side of the magnetic induction unit are close to a plane as much as possible.
The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the present application, and the changes and substitutions are intended to be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (5)
1. A gradient sensor, the gradient sensor comprising: the method comprises the steps of arranging a linear magnetic induction unit on a substrate, and arranging M-axis magnetic field guiding and gathering structures on the left side and the right side of the magnetic induction unit along the X-axis direction respectively, wherein the M axis is a Y axis or a Z axis, and the Z axis is perpendicular to the wafer surface;
the M-axis magnetic field guiding and gathering structure is L-shaped and consists of a magnetic field gathering part and a magnetic field guiding part, wherein the magnetic field gathering part extends along a parallel/antiparallel X axis to serve as the bottom of the L-shaped magnetic field, and the magnetic field guiding part extends along a parallel M axis and is used for guiding a magnetic field in the direction of the M axis; the shape and/or the size of the M-axis magnetic field guiding and gathering structure are adjusted in an analog simulation environment of an M-axis uniform magnetic field in advance, so that the output signal of the magnetic induction unit is ensured to be determined within a required OFFset range and/or on the premise of a required sensitivity range;
the magnetic field gathering part of the M-axis magnetic field guiding gathering structure on the left side of the magnetic induction unit extends to the right, and the magnetic field gathering part of the M-axis magnetic field guiding gathering structure on the right side extends to the left; the magnetic induction unit is basically positioned on the same plane with the magnetic field gathering parts of the M-axis magnetic field guiding gathering structures on the left side and the right side of the magnetic induction unit, and is used for measuring the intensity difference of components of the magnetic field on the straight line parallel to the X axis, which is derived from the magnetic field gathering parts of the M-axis magnetic field guiding gathering structures on the left side and the right side of the magnetic induction unit.
2. The gradient sensor of claim 1, wherein a top of the magnetic field gathering portion is not higher than a bottom of the magnetic induction unit.
3. The gradient sensor of claim 1, wherein a bottom of the magnetic field concentration portion is not higher than a bottom of the magnetic induction unit itself, and a top of the magnetic field concentration portion is not lower than a top of the magnetic induction unit.
4. The gradient sensor of any one of claims 1-3, wherein the magnetic induction unit is any one of TMR, AMR, GMR, or a hall sensor.
5. The gradient sensor of claim 4, wherein when the magnetic induction unit is any one of TMR, AMR, GMR, a sensitivity direction of the magnetic induction unit is parallel or antiparallel to an X-axis direction.
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| CN202311316681.8A CN117054936B (en) | 2023-10-12 | 2023-10-12 | Gradient sensor |
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| CN202311316681.8A CN117054936B (en) | 2023-10-12 | 2023-10-12 | Gradient sensor |
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Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103116144A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Z-direction magnetic field sensor with magnetic orbit structure |
| CN103995240A (en) * | 2014-05-30 | 2014-08-20 | 江苏多维科技有限公司 | Magnetic resistance Z-axis gradient sensor chip |
| KR20150056064A (en) * | 2013-11-14 | 2015-05-22 | 알프스 덴키 가부시키가이샤 | Magnetic detecting device |
| CN109212440A (en) * | 2018-10-31 | 2019-01-15 | 中国科学技术大学 | Magnetic field measurement method and device based on solid state spin and magnetic field measurement system |
| CN208999552U (en) * | 2018-09-20 | 2019-06-18 | 黑龙江大学 | A kind of magnetic field vector sensor |
| CN211086569U (en) * | 2019-10-15 | 2020-07-24 | 中国人民解放军国防科技大学 | Magnetic sensor |
| CN113124741A (en) * | 2019-12-30 | 2021-07-16 | 迈来芯电子科技有限公司 | Magnetic position sensor system and method |
| WO2021253600A1 (en) * | 2020-06-15 | 2021-12-23 | 北京航空航天大学 | Magnetic sensor of monolithic integrated three-axis tunnel magnetoresistance and preparation method therefor |
| CN113945872A (en) * | 2020-07-17 | 2022-01-18 | 江苏多维科技有限公司 | Z-axis gradient magnetic field sensor chip |
| CN116224190A (en) * | 2023-05-06 | 2023-06-06 | 江苏多维科技有限公司 | Magnetic sensor for eliminating manufacturing error of magnetic flux collecting element |
| CN116559735A (en) * | 2023-05-12 | 2023-08-08 | 苏州纳芯微电子股份有限公司 | Magnetic sensor, state detection device and method |
| CN116859298A (en) * | 2023-08-01 | 2023-10-10 | 江苏多维科技有限公司 | Multi-axis magnetic field sensor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102590768B (en) * | 2012-03-14 | 2014-04-16 | 江苏多维科技有限公司 | Magneto-resistance magnetic field gradient sensor |
| CN104303066B (en) * | 2013-03-26 | 2016-12-21 | 旭化成微电子株式会社 | Magnetic Sensor and magnetic detection method thereof |
-
2023
- 2023-10-12 CN CN202311316681.8A patent/CN117054936B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103116144A (en) * | 2013-01-22 | 2013-05-22 | 中国人民解放军国防科学技术大学 | Z-direction magnetic field sensor with magnetic orbit structure |
| KR20150056064A (en) * | 2013-11-14 | 2015-05-22 | 알프스 덴키 가부시키가이샤 | Magnetic detecting device |
| CN103995240A (en) * | 2014-05-30 | 2014-08-20 | 江苏多维科技有限公司 | Magnetic resistance Z-axis gradient sensor chip |
| CN208999552U (en) * | 2018-09-20 | 2019-06-18 | 黑龙江大学 | A kind of magnetic field vector sensor |
| CN109212440A (en) * | 2018-10-31 | 2019-01-15 | 中国科学技术大学 | Magnetic field measurement method and device based on solid state spin and magnetic field measurement system |
| CN211086569U (en) * | 2019-10-15 | 2020-07-24 | 中国人民解放军国防科技大学 | Magnetic sensor |
| CN113124741A (en) * | 2019-12-30 | 2021-07-16 | 迈来芯电子科技有限公司 | Magnetic position sensor system and method |
| WO2021253600A1 (en) * | 2020-06-15 | 2021-12-23 | 北京航空航天大学 | Magnetic sensor of monolithic integrated three-axis tunnel magnetoresistance and preparation method therefor |
| CN113945872A (en) * | 2020-07-17 | 2022-01-18 | 江苏多维科技有限公司 | Z-axis gradient magnetic field sensor chip |
| CN116224190A (en) * | 2023-05-06 | 2023-06-06 | 江苏多维科技有限公司 | Magnetic sensor for eliminating manufacturing error of magnetic flux collecting element |
| CN116559735A (en) * | 2023-05-12 | 2023-08-08 | 苏州纳芯微电子股份有限公司 | Magnetic sensor, state detection device and method |
| CN116859298A (en) * | 2023-08-01 | 2023-10-10 | 江苏多维科技有限公司 | Multi-axis magnetic field sensor |
Non-Patent Citations (2)
| Title |
|---|
| Magnetic gradient tensor positioning system based on AMR sensor;Jiacheng Li 等;2022 IEEE 6th Information Technology and Mechatronics Engineering Conference (ITOEC);1515-1520 * |
| Measurement Techniques For Magnetic Field Gradient Detection;P.Akhavan Leilabady 等;PROCEEDINGS OF SPIE;第718卷;120-127 * |
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