CN116224190B - Magnetic sensor for eliminating manufacturing error of magnetic flux collecting element - Google Patents
Magnetic sensor for eliminating manufacturing error of magnetic flux collecting element Download PDFInfo
- Publication number
- CN116224190B CN116224190B CN202310499132.2A CN202310499132A CN116224190B CN 116224190 B CN116224190 B CN 116224190B CN 202310499132 A CN202310499132 A CN 202310499132A CN 116224190 B CN116224190 B CN 116224190B
- Authority
- CN
- China
- Prior art keywords
- magnetic
- magneto
- axis
- magnetoresistive element
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0017—Means for compensating offset magnetic fields or the magnetic flux to be measured; Means for generating calibration magnetic fields
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R35/00—Testing or calibrating of apparatus covered by the other groups of this subclass
- G01R35/005—Calibrating; Standards or reference devices, e.g. voltage or resistance standards, "golden" references
Abstract
The invention relates to the technical field of magnetic sensors, and provides a magnetic sensor for eliminating manufacturing errors of a magnetic flux collecting element, which comprises: a magnetic flux collecting element that distorts the external magnetic field to convert a component of the Z-axis into a component perpendicular to the Z-axis; a first magnetic induction pair including a first magnetoresistive element and a second magnetoresistive element, both of which are located below the magnetic flux collecting element in a Z-axis direction and have the same sensitivity direction; the directions of the magnetic field components perpendicular to the Z axis are the same at the positions of the first magnetic resistance element and the second magnetic resistance element, and the change rates of the magnetic field components along with the position distances are the same but have opposite trends; the first and second magneto-resistive elements are connected in series or in parallel. The method realizes the elimination of manufacturing errors of the magnetic flux collecting element and solves the technical problem of inaccurate measurement of the Z-axis magnetic field caused by the manufacturing errors.
Description
Technical Field
The invention relates to the technical field of magnetic sensors, in particular to a magnetic sensor for eliminating manufacturing errors of a magnetic flux collecting element.
Background
In the conventional magnetic sensor, a magnetic flux collecting element is provided, and the magnetic flux collecting element acts on the distortion of the magnetic field to convert the Z-axis magnetic field component perpendicular to the plane of the sheet-like magnetic flux collecting element into the magnetic field component in the XY plane, thereby realizing the measurement of the magnetic signal in the Z-axis direction. Since the magnetic field is distorted to a greater extent at the edges of the magnetic flux concentrating element, a magnetoresistive element is generally disposed near the edges of the magnetic flux concentrating element to sense the magnetic field component in the XY plane.
However, the growth of the magnetic flux collecting element may not be expected due to the process problem, for example, the magnetic flux collecting element may be changed during manufacturing, so that the edge position of the magnetic flux collecting element may be changed, and the change of the edge position may cause the magnetic field component in the X direction or the Y direction sensed by the magnetoresistive element to become larger or smaller, so that the magnetic signal size in the Z axis direction is estimated again by the larger or smaller magnetic field component, and an error may be necessarily present.
Disclosure of Invention
The invention aims to provide a magnetic sensor for eliminating manufacturing errors of a magnetic flux collecting element, so as to solve the technical problem of inaccurate measurement of magnetic signals perpendicular to the magnetic flux collecting element caused by the manufacturing errors of the magnetic flux collecting element in the prior art.
In a first aspect, embodiments of the present invention provide a magnetic sensor that eliminates manufacturing errors of a magnetic flux-collecting member, comprising: a magnetic flux collecting element that distorts the external magnetic field to convert a component of the Z-axis into a component perpendicular to the Z-axis; a first magnetic induction pair including a first magnetoresistive element and a second magnetoresistive element, both of which are located below the magnetic flux collecting element in a Z-axis direction and have the same sensitivity direction; the directions of the magnetic field components perpendicular to the Z axis are the same at the positions of the first magnetic resistance element and the second magnetic resistance element, and the change rates of the magnetic field components along with the position distances are the same but the trends are opposite.
Further, a second pair of magnetic inductances including a third magnetoresistive element and a fourth magnetoresistive element; the third magnetoresistive element and the fourth magnetoresistive element are both located below the magnetic flux concentrating element in the Z-axis direction; the magnetic field component perpendicular to the Z axis at the positions of the third magnetic resistance element and the fourth magnetic resistance element is the same as the direction at the first magnetic resistance element, and the change rate of the magnetic field component along with the position distance at the positions of the third magnetic resistance element and the fourth magnetic resistance element is the same but has opposite trend; the third magneto-resistive element and the fourth magneto-resistive element have the same sensitivity direction and are opposite to the first magneto-resistive element.
Further, a second pair of magnetic inductances including a third magnetoresistive element and a fourth magnetoresistive element; the third magnetoresistive element and the fourth magnetoresistive element are both located below the magnetic flux concentrating element in the Z-axis direction; the direction of the magnetic field component perpendicular to the Z axis at the position of the third magnetic resistance element and the fourth magnetic resistance element is opposite to that at the position of the first magnetic resistance element, and the change rate of the magnetic field component along with the position distance at the position of the third magnetic resistance element and the fourth magnetic resistance element is the same but the trend is opposite; the third magneto-resistive element and the fourth magneto-resistive element have the same sensitivity direction as the first magneto-resistive element.
Further, the first magnetic resistance element and the second magnetic resistance element are connected in series or in parallel to form a first bridge arm; the third magnetic resistance element and the fourth magnetic resistance element are connected in series or in parallel to form a second bridge arm; and the first bridge arm and the second bridge arm form a first half-bridge circuit output signal.
Further, the magnetic resonance imaging device further includes a third magnetic induction pair including a fifth magnetic resistance element and a sixth magnetic resistance element, and a fourth magnetic induction pair including a seventh magnetic resistance element and an eighth magnetic resistance element, the fifth magnetic resistance element being the same as the sixth magnetic resistance element in the sensitivity direction, and the seventh magnetic resistance element being the same as the eighth magnetic resistance element in the sensitivity direction.
Further, the change rate of the magnetic field component perpendicular to the Z axis at the position of the fifth magnetic resistance element and the change rate of the magnetic field component perpendicular to the Z axis at the position of the sixth magnetic resistance element are the same but opposite in direction, and the change rate of the magnetic field component perpendicular to the Z axis at the position of the seventh magnetic resistance element and the change rate of the magnetic field component perpendicular to the Z axis at the position of the eighth magnetic resistance element are the same but opposite in direction, wherein the fifth magnetic resistance element and the sixth magnetic resistance element are connected in series or in parallel to form a third bridge arm, and the seventh magnetic resistance element and the eighth magnetic resistance element are connected in series or in parallel to form a fourth bridge arm; the third bridge arm and the fourth bridge arm form a second half-bridge circuit, and the first half-bridge circuit and the second half-bridge circuit form a first full-bridge structure output signal.
Further, the first magneto-resistive element and the second magneto-resistive element are one of the XMR magneto-resistive sensors including TMR, AMR, GMR, CMR, SMR, and the material of the magnetic flux collecting element is a soft magnetic material having high magnetic permeability.
In a second aspect, embodiments of the present invention also provide a magnetic sensor that eliminates manufacturing errors of a magnetic flux-collecting member, including: a magnetic flux collecting element that distorts the external magnetic field to convert a component of the Z-axis into a component perpendicular to the Z-axis; four magnetoresistive elements including a ninth magnetoresistive element, a tenth magnetoresistive element, an eleventh magnetoresistive element, and a twelfth magnetoresistive element, the four magnetoresistive elements being located below the magnetic flux collecting element in the Z-axis direction and being identical in sensitivity direction.
Specifically, the directions of the magnetic field components perpendicular to the Z axis at the positions of the ninth magnetic resistance element and the tenth magnetic resistance element are first directions, the directions of the magnetic field components perpendicular to the Z axis at the positions of the eleventh magnetic resistance element and the twelfth magnetic resistance element are second directions, and the first directions are opposite to the second directions; the size of the magnetic field component perpendicular to the Z axis of the position of the ninth magnetic resistance element is the same as that of the magnetic field component perpendicular to the Z axis of the position of the eleventh magnetic resistance element, the size of the magnetic field component perpendicular to the Z axis of the position of the tenth magnetic resistance element is the same as that of the magnetic field component perpendicular to the Z axis of the position of the twelfth magnetic resistance element, and the change rate of the magnetic field component perpendicular to the Z axis of the position of each of the four magnetic resistance elements along with the position distance is the same.
Further, the ninth magneto-resistive element and the eleventh magneto-resistive element constitute a third half-bridge circuit, the tenth magneto-resistive element and the twelfth magneto-resistive element constitute a fourth half-bridge circuit, the third and fourth half-bridge circuits form a second full-bridge structure output signal, the ninth magneto-resistive element and the tenth magneto-resistive element are located at diagonal positions of the full bridge, and the eleventh magneto-resistive element and the twelfth magneto-resistive element are located at diagonal positions of the full bridge.
Further, the four magneto-resistive elements are one of the XMR magneto-resistive sensors including TMR, AMR, GMR, CMR, SMR, and the material of the magnetic flux collecting element is a high-permeability soft magnetic material.
The embodiment of the invention has at least the following technical effects:
the magnetic sensor for eliminating the manufacturing error of the magnetic flux collecting element provided by the embodiment of the invention comprises a magnetic induction pair arranged below the magnetic flux collecting element, wherein the magnetic induction pair comprises two magnetic resistance elements, namely a first magnetic resistance element and a second magnetic resistance element, and the two magnetic resistance elements are positioned below the magnetic flux collecting element in the Z-axis direction and have the same sensitivity direction; the directions of the magnetic field components perpendicular to the Z axis are the same at the positions of the two magnetic resistance elements, and the change rates of the magnetic field components along with the position distance are the same but the trends are opposite, so that the change amount of the magnetic field perpendicular to the Z axis caused by the edge position change can be counteracted. The technical effect of eliminating manufacturing errors of the magnetic flux collecting member is achieved, so that magnetic signals perpendicular to the magnetic flux collecting member are measured more accurately.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram showing the positional relationship between a magnetoresistive element and a flux-concentrating element on the XZ plane of a magnetic sensor for eliminating manufacturing errors of the flux-concentrating element according to embodiment 1 of the present invention;
FIG. 2 is a schematic diagram showing the positional relationship between a magneto-resistive element and a magnetic flux collecting element on the XY plane of a magnetic sensor for eliminating manufacturing errors of the magnetic flux collecting element according to embodiment 1 of the present invention;
FIG. 3 is a schematic illustration of the magnetic field variation at the edges of a flux concentrating element according to an embodiment of the present invention;
FIG. 4 is a schematic diagram showing the positional relationship between a magneto-resistive element and a magnetic flux collecting element on the XY plane of a magnetic sensor for eliminating manufacturing errors of the magnetic flux collecting element according to embodiment 2 of the present invention;
FIG. 5 is a schematic diagram showing the positional relationship between a magnetoresistive element and a flux-concentrating element on the XY plane of a magnetic sensor for eliminating manufacturing errors of the flux-concentrating element according to embodiment 3 of the present invention;
FIG. 6 is a schematic diagram showing the positional relationship between a magnetoresistive element and a flux-concentrating element on the XY plane of a magnetic sensor for eliminating manufacturing errors of the flux-concentrating element according to embodiment 4 of the present invention;
FIG. 7 is a schematic diagram showing the positional relationship between a magnetoresistive element and a flux-concentrating element on the XZ plane of a magnetic sensor for eliminating manufacturing errors of the flux-concentrating element according to embodiment 5 of the invention;
fig. 8 is a schematic diagram showing a full bridge connection of magnetoresistive elements of a magnetic sensor for eliminating manufacturing errors of a magnetic flux collecting element according to embodiment 5 of the invention.
Icon: 2-magnetic flux concentrating element; 101-a first magneto-resistive element; 102-a second magneto-resistive element; 103-a third magneto-resistive element; 104-a fourth magneto-resistive element; 105-a fifth magneto-resistive element; 106-a sixth magneto-resistive element; 107-seventh magneto-resistive element; 108-eighth magneto-resistive elements; 109-ninth magneto-resistive elements; 110-tenth magneto-resistive element; 111-eleventh magnetoresistive element; 112-a twelfth magnetoresistive element; 31-curve; 32-vertical dashed line; 201-a first X side; 202-a second X-side; 211-a first Y-side; 212-second Y-side.
Detailed Description
The technical solutions of the present invention will be clearly and completely described in connection with the embodiments, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It will be understood by those skilled in the art that all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs unless defined otherwise. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless expressly stated otherwise, as understood by those skilled in the art. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. The term "and/or" as used herein includes all or any element and all combination of one or more of the associated listed items.
Example 1
Referring to fig. 1 and 2, a magnetic sensor for eliminating manufacturing errors of a magnetic flux collecting element is provided in an embodiment of the present invention, which includes a magnetic flux collecting element 2, wherein the magnetic flux collecting element 2 is used for converting a magnetic field component in a Z-axis direction into a magnetic field component perpendicular to the Z-axis, i.e., a magnetic field component in an X-axis or Y-axis direction. The magnetic flux collecting element 2 has a first X side 201 and a second X side 202 in the X-axis direction and a first Y side 211 and a second Y side 212 in the Y-axis direction. In this embodiment, a set of magnetic induction pairs is disposed below the first X-side surface 201, the magnetic induction pairs including the first magnetoresistive element 101 and the second magnetoresistive element 102, the first magnetoresistive element 101 and the second magnetoresistive element 102 being located on both sides of an extension surface of the first X-side surface 201 in the Z-axis direction, respectively, and a projection of the magnetic flux collecting element 2 on the XY plane does not cover the first magnetoresistive element 101 but covers the second magnetoresistive element 102.
At the positions of the first magneto-resistive element 101 and the second magneto-resistive element 102, the directions of the magnetic field components perpendicular to the Z-axis are phaseAnd the change rate of the magnetic field component along with the position distance is the same but opposite in direction. And the sensitivity direction of the first magneto-resistive element 101 is the same as that of the second magneto-resistive element 102, the first magneto-resistive element 101 and the second magneto-resistive element 102 are connected in series or in parallel. Specifically, referring to fig. 3, fig. 3 simulates only the magnetic field variation at the edge of a flux concentrating element 2 of a certain size. Curve 31 in fig. 3 is the comsol fitting data for the magnetic field generated by the flux concentrating element in the X direction after the application of a perpendicular magnetic field in the Z direction. The first magneto-resistive element 101 and the second magneto-resistive element 102 should be located within a distance where the X-direction magnetic field component can be sensed, otherwise the sensor directly fails. In FIG. 3, the vertical dashed line 32 represents the edge of the flux concentrating element, the left side of the vertical dashed line 32 is the lower part covered by the flux concentrating element, and the right side is the outer part not covered, and in general, the trend of the magnetic field change is asymmetric with respect to the edge of the flux concentrating element, and it can be seen that K 1 And K is equal to 2 Where the gradient K of the magnetic field changes with different magnitudes 1 And K is equal to 2 The sizes are the same but the directions are opposite. In the linear sensor, the conductance value of the magneto-resistor and the magnetic field at the position are in a linear relationship in theory, but when in actual measurement, it is found that the resistance value and the magnetic field at the position are also in an approximate linear relationship. If there is no compensation mechanism for the magnetic resistor at the bottom of the side surface of the magnetic flux gathering element, the edge position change of the magnetic flux gathering element caused by manufacturing error will cause the resistance value change of the magnetic resistor, and the Z-axis magnetic field calculated according to the resistance value of the magnetic resistor will inevitably cause error.
Since the variation curve of the magnetic field at the edges of the flux concentrating element is substantially similar, in this embodiment, the variation of the first X-side 201 is used to describe how the magnetic induction counteracts the expansion or contraction of the edges of the flux concentrating element due to the process error, thereby creating a measurement error. In FIG. 1, the direction indicated by the arrow of the X-axis is taken as the positive direction of the magnetic field, the sensitivity direction of the first magneto-resistive element 101 is the same as that of the second magneto-resistive element 102, and when the direction of the X-axis magnetic field at the position is the same and the change rate of the magnetic field component with the position distance is the same but the directions are opposite, the conductance G of the first magneto-resistive element 101 is not shifted if the first X-side 201 is not shifted due to the process error 101 =G 0 -k(-H 1 ) Conductance G of the second magnetoresistive element 102 102 =G 0 -k(-H 2 ) Wherein G is 0 Is the intrinsic conductivity base, k is the absolute value of the coefficient of conductivity change caused by external magnetic field change; the "+" or "-" in front of k in the formula depends on the sensitivity direction of the magneto-resistive element, and here the sensitivity direction of the first magneto-resistive element 101 is negative, and the "-" in front of k is the same as the sensitivity direction of the second magneto-resistive element 102, so G 101 And G 102 Where k is preceded by "-", G is measured 101 And G 102 The magnitude of the magnetic field in the X direction can be deduced, and then the magnetic field in the Z axis direction is calculated, H 1 Is the magnetic field magnitude, H, of the location of the first magneto-resistive element 101 2 Is the magnitude of the magnetic field at the location of the second magneto-resistive element 102.
When there is an error in the process, taking the first X-side 201 as an example of the inward shrinkage, i.e. the positive shift to the X-axis, the absolute value of the magnetic field variation is denoted as a because the first magneto-resistive element 101 and the second magneto-resistive element 102 are located at the same position and the X-axis magnetic field component has the same rate of change with the position distance but opposite directions, and the conductance G is measured when the first magneto-resistive element 101 is far from the first X-side 201 101 =G 0 -k(-H 1 +a), the second magneto-resistive element 102 is adjacent to the first X-side 201, its conductance G 102 =G 0 -k(-H 2 -a) connecting the first magneto-resistive element 101 in parallel with the second magneto-resistive element 102, the total conductance g=g 0 -k(-H 1 -H 2 ) The unknown magnetic field variation caused by the inward contraction of the first X-side 201 can be completely eliminated, and the magnetic field in the Z-axis direction can be calculated from the total permeance after parallel connection.
Alternatively, since the inventors found that the resistance value and the magnetic field at the position are also approximately linear in relation to each other at the time of actual measurement, the first magnetoresistive element 101 and the second magnetoresistive element 102 may be connected in series to eliminate the subsequent error caused by the unknown amount of change in the magnetic field due to inward contraction of the first X-side surface 201.
If the magnetic field components at the positions of the first and second magnetoresistive elements 101 and 102 are opposite in their changing rate direction with the position distance but different in magnitude, the unknown amount of change in the magnetic field due to the inward contraction of the first X-side surface 201 cannot be completely eliminated, but some of the errors due to the inward contraction of the first X-side surface 201 can be canceled.
It is conceivable that the present embodiment is explained taking the shrinkage of the first X-side surface 201 as an example, and the magnetic induction pair also functions when the first X-side surface 201 is expanded outward. It is further conceivable that the pair of magnetic induction elements may be placed below the second X-side surface 202, the first Y-side surface 211, and the second Y-side surface 212, so as to solve the influence of the edge deviation of the magnetic flux collecting element due to the manufacturing error of the magnetic flux collecting element in each direction.
Alternatively, the first magneto-resistive element 101 and the second magneto-resistive element 102 are one of XMR magneto-resistive sensors including TMR, AMR, GMR, CMR, SMR.
Alternatively, the material of the magnetic flux collecting element 2 is a soft magnetic material of high magnetic permeability, such as NiFe or the like.
Example 2
Referring to fig. 4, in this embodiment, the magnetic induction pair is used as one bridge arm based on embodiment 1, that is, the first magnetoresistive element 101 and the second magnetoresistive element 102 are connected in parallel or in series as one bridge arm. In addition to providing the first magnetic induction pair below the first X-side surface 201, the first magnetic induction pair includes the first magnetoresistive element 101 and the second magnetoresistive element 102, and the second magnetic induction pair is also provided below the first X-side surface 201, the second magnetic induction pair includes the third magnetoresistive element 103 and the fourth magnetoresistive element 104, the sensitivity directions of the third magnetoresistive element 103 and the fourth magnetoresistive element 104 are the same, and the change rates of the X-axis magnetic field components with the position distances at the positions of the third magnetoresistive element 103 and the fourth magnetoresistive element 104 are the same but opposite directions.
Meanwhile, the first magnetoresistive element 101 and the third magnetoresistive element 103 have opposite sensitivity directions, and the first magnetic induction pair and the second magnetic induction pair are regarded as two arms, and are connected in series to form a half-bridge circuit to detect the magnetic field strength.
Because the sensitivity directions of the first magneto-resistive element 101 and the third magneto-resistive element 103 are opposite, the signals output by the half-bridge circuit formed by the first magneto-resistive element 101 can be more sensitive, and each bridge arm has eliminated the influence of the manufacturing error of the magnetic flux collecting element on the first X-side surface 201.
Alternatively, the first magneto-resistive element 101, the second magneto-resistive element 102, the third magneto-resistive element 103, and the fourth magneto-resistive element 104 are one of XMR magneto-resistive sensors including TMR, AMR, GMR, CMR, SMR.
Example 3
Referring to fig. 5, in this embodiment, the magnetic induction pair is used as one bridge arm based on embodiment 1, that is, the first magnetoresistive element 101 and the second magnetoresistive element 102 are connected in parallel or in series as one bridge arm. In addition to providing a first pair of magnetic inductances under the first X-side surface 201, the first pair of magnetic inductances including the first magnetoresistive element 101 and the second magnetoresistive element 102, and also providing a second pair of magnetic inductances under the second X-side surface 202, the second pair of magnetic inductances including the third magnetoresistive element 103 and the fourth magnetoresistive element 104, the first pair of magnetic inductances being opposite in direction to a magnetic field component in the X-axis at a location where the second pair of magnetic inductances are located; the sensitivity directions of the third magneto-resistive element 103 and the fourth magneto-resistive element 104 are the same, and the change rates of the X-axis magnetic field components with the position distances at the positions of the third magneto-resistive element 103 and the fourth magneto-resistive element 104 are the same but opposite.
The first magnetoresistive element 101 and the third magnetoresistive element 103 have the same sensitivity direction, and the pair of first magnetic inductances and the pair of second magnetic inductances are regarded as two arms, and are connected in series to form a half-bridge circuit to detect the magnetic field strength. Each bridge arm has eliminated the effects of the magnetic flux concentrating element manufacturing errors, and therefore, there is no effect of the first X-side 201 and second X-side 202 manufacturing errors in the half-bridge circuit.
Alternatively, the first magneto-resistive element 101, the second magneto-resistive element 102, the third magneto-resistive element 103, and the fourth magneto-resistive element 104 are one of XMR magneto-resistive sensors including TMR, AMR, GMR, CMR, SMR.
Example 4
Referring to fig. 6, in this embodiment, the magnetic induction pair is used as a bridge arm based on embodiment 3. Two sets of magnetic induction pairs are arranged below the first X side surface 201, the directions of magnetic field components on the X axis of the two sets of magnetic induction pairs are the same, the first magnetic induction pair comprises a first magnetic resistance element 101 and a second magnetic resistance element 102, and the third magnetic induction pair comprises a fifth magnetic resistance element 105 and a sixth magnetic resistance element 106; simultaneously, two groups of magnetic induction pairs are also arranged below the second X side surface 202, namely a second magnetic induction pair and a fourth magnetic induction pair, wherein the directions of magnetic field components on the X axis of the positions where the two groups of magnetic induction pairs are positioned are the same, the second magnetic induction pair comprises a third magnetic resistance element 103 and a fourth magnetic resistance element 104, and the fourth magnetic induction pair comprises a seventh magnetic resistance element 107 and an eighth magnetic resistance element 108; the two sets of magnetic induction pairs under the first X-side 201 are opposite in direction to the magnetic field component on the X-axis at the location of the two sets of magnetic induction pairs under the second X-side 202.
The first magnetoresistive element 101 and the second magnetoresistive element 102 have the same sensitivity direction, the third magnetoresistive element 103 and the fourth magnetoresistive element 104 have the same sensitivity direction, the fifth magnetoresistive element 105 and the sixth magnetoresistive element 106 have the same sensitivity direction, and the seventh magnetoresistive element 107 and the eighth magnetoresistive element 108 have the same sensitivity direction.
The sensitivity direction of the first magneto-resistive element 101 is the same as that of the third magneto-resistive element 103, and is opposite to that of the fifth magneto-resistive element 105 and the seventh magneto-resistive element 107.
The change rate of the X-axis magnetic field component with respect to the position distance at the positions of the first and second magneto-resistive elements 101 and 102 is the same but opposite in direction, the change rate of the X-axis magnetic field component with respect to the position distance at the positions of the third and fourth magneto-resistive elements 103 and 104 is the same but opposite in direction, the change rate of the X-axis magnetic field component with respect to the position distance at the positions of the fifth and sixth magneto-resistive elements 105 and 106 is the same but opposite in direction, and the change rate of the X-axis magnetic field component with respect to the position distance at the positions of the seventh and eighth magneto-resistive elements 107 and 108 is the same but opposite in direction.
The first magnetic induction pair, the second magnetic induction pair, the third magnetic induction pair, and the fourth magnetic induction pair are regarded as four arms, and a full-bridge circuit can be formed to detect the magnetic field strength. Each leg has eliminated the effects of manufacturing errors of the flux concentrating element on the first X-side 201 and the second X-side 202, and therefore, there is no effect of manufacturing errors in the full bridge circuit.
Alternatively, the first magnetoresistive element 101, the second magnetoresistive element 102, the third magnetoresistive element 103, the fourth magnetoresistive element 104, the fifth magnetoresistive element 105, the sixth magnetoresistive element 106, the seventh magnetoresistive element 107, and the eighth magnetoresistive element 108 are one of XMR magnetoresistive sensors including TMR, AMR, GMR, CMR, SMR.
Example 5
Referring to fig. 7 and 8, a magnetic sensor for eliminating manufacturing errors of a magnetic flux collecting member, comprises: a magnetic flux collecting member which converts a component of the Z axis into a component perpendicular to the Z axis, the magnetic flux collecting member 2 having a first X side 201 and a second X side 202 in the X axis direction and a first Y side 211 and a second Y side 212 in the Y axis direction; the pair of magnetic inductances in the present embodiment includes a ninth magnetoresistive element 109, a tenth magnetoresistive element 110, an eleventh magnetoresistive element 111, and a twelfth magnetoresistive element 112, taking two sides of the pair of magnetic inductances placed in the X-axis direction as an example, namely, the ninth magnetoresistive element 109 and the tenth magnetoresistive element 110 are placed on both sides below the first X-side surface 201, the eleventh magnetoresistive element 111 and the twelfth magnetoresistive element 112 are placed on both sides below the second X-side surface 202, respectively, and projections of the magnetic flux collecting elements on the XY plane do not cover the ninth magnetoresistive element 109 and the eleventh magnetoresistive element 111, but cover the tenth magnetoresistive element 110 and the twelfth magnetoresistive element 112.
Specifically, the sensitivity direction of the ninth magnetoresistive element 109, the sensitivity direction of the tenth magnetoresistive element 110, and the sensitivity direction of the eleventh magnetoresistive element 111 are the same as the sensitivity direction of the twelfth magnetoresistive element 112, and are parallel to the X axis, and the direction of the magnetic field component in which the ninth magnetoresistive element 109 and the tenth magnetoresistive element 110 are located is opposite to the direction of the magnetic field component in which the eleventh magnetoresistive element 111 and the twelfth magnetoresistive element 112 are located.
The X-axis magnetic field component of the position where the ninth magneto-resistive element 109 and the eleventh magneto-resistive element 111 are located is the same in magnitude and denoted as H 3 The X-axis magnetic field component of the position of the tenth magneto-resistive element 110 and the twelfth magneto-resistive element 112 is the same, denoted as H 4 And a ninth magneto-resistive element 109, aThe X-axis magnetic field component at the positions of the tenth magnetoresistive element 110, the eleventh magnetoresistive element 111, and the twelfth magnetoresistive element 112 has the same magnitude as the change rate of the position distance.
When the first X-side surface 201 and the second X-side surface 202 are simultaneously expanded outward or contracted inward, the ninth magneto-resistive element 109, the eleventh magneto-resistive element 111, the tenth magneto-resistive element 110, and the twelfth magneto-resistive element 112 are sequentially connected in full bridge, and differential signals are output from the node between the ninth magneto-resistive element 109 and the eleventh magneto-resistive element 111, and the node between the tenth magneto-resistive element 110 and the twelfth magneto-resistive element 112. The description will be made next with the first X-side 201 expanding outward simultaneously with the second X-side 202.
When the first X-side surface 201 and the second X-side surface 202 are expanded outward at the same time, the ninth magneto-resistive element 109 and the eleventh magneto-resistive element 111 approach the edge of the magnetic flux collecting element 2, and the magnetic field component in which the ninth magneto-resistive element 109 is located increases to- (H) 3 +a), the magnetic field component in which the eleventh magnetoresistive element 111 is located increases to H 3 +a; the tenth magnetoresistive element 110 and the twelfth magnetoresistive element 112 are away from the edge of the magnetic flux collecting element 2, and the magnetic field component in which the tenth magnetoresistive element 110 is located is reduced to- (H) 4 -a) the magnetic field component in which the twelfth magneto-resistive element 112 is located is reduced to H 4 -a. In this embodiment, the sensitivity direction of the ninth magneto-resistive element 109 is positive, and the front of k is "+", and the sensitivity directions of the four magneto-resistive elements are the same, and the sensitivity coefficient k in the conductance formula is "+".
At this time, referring to fig. 8, the ninth magneto-resistive element 109 and the eleventh magneto-resistive element 111 are connected in series to form one branch, the tenth magneto-resistive element 110 and the twelfth magneto-resistive element 112 are connected in series to form another branch, and the two branches form a full bridge.
V of the final output out The unknown magnetic field error a caused by the simultaneous outward expansion of the first X side 201 and the second X side 202 is eliminated, according to the V out The magnetic field in the Z-axis direction is not affected by errors.
Optionally, the ninth magneto-resistive element 109, the tenth magneto-resistive element 110, the eleventh magneto-resistive element 111, and the twelfth magneto-resistive element 112 are one of XMR magneto-resistive sensors including TMR, AMR, GMR, CMR, SMR.
Alternatively, the material of the magnetic flux collecting element 2 is a soft magnetic material of high magnetic permeability, such as NiFe or the like.
The present embodiment is described with the first X-side 201 and the second X-side 202 expanding outward simultaneously, and on this basis, it is easily conceivable that the present solution still applies when the first X-side 201 and the second X-side 202 contract inward simultaneously; or when the first Y-side 211 and the second Y-side 212 expand or contract outward or inward at the same time, the pair of magnetic induction in the present embodiment is arranged below the first Y-side 211 and the second Y-side 212, and the influence of errors in the Y-axis can be eliminated as well.
Those of skill in the art will appreciate that the various operations, methods, steps in the flow, acts, schemes, and alternatives discussed in the present invention may be alternated, altered, combined, or eliminated. Further, other steps, means, or steps in a process having various operations, methods, or procedures discussed herein may be alternated, altered, rearranged, disassembled, combined, or eliminated. Further, steps, measures, schemes in the prior art with various operations, methods, flows disclosed in the present invention may also be alternated, altered, rearranged, decomposed, combined, or deleted.
In the description of the present invention, it should be understood that the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, merely to facilitate describing the present invention and simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
The terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meanings of the above terms in the present invention can be understood in specific situations by those of ordinary skill in the art.
In the description of the present specification, a particular feature, structure, material, or characteristic may be combined in any suitable manner in one or more embodiments or examples.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (10)
1. A magnetic sensor that eliminates manufacturing errors of a magnetic flux-collecting member, comprising:
a magnetic flux collecting element that distorts the external magnetic field to convert a component of the Z-axis into a component perpendicular to the Z-axis;
a first magnetic induction pair including a first magnetoresistive element and a second magnetoresistive element, both of which are located below the magnetic flux collecting element in a Z-axis direction and have the same sensitivity direction;
the first magnetic resistance element and the second magnetic resistance element are connected in series or in parallel, the directions of magnetic field components perpendicular to the Z axis are the same, and the change rates of the magnetic field components along with the Z axis, which is the same with the position, from the center of the magnetic flux gathering element are opposite in trend.
2. The magnetic sensor for eliminating manufacturing errors of magnetic flux-concentrating elements of claim 1 further comprising a second pair of magnetic inductances including a third magnetoresistive element and a fourth magnetoresistive element;
the third magnetoresistive element and the fourth magnetoresistive element are both located below the magnetic flux concentrating element in the Z-axis direction;
the magnetic field component perpendicular to the Z axis at the positions of the third magnetic resistance element and the fourth magnetic resistance element is the same as the direction at the first magnetic resistance element, and the change rate of the magnitude of the magnetic field component at the positions of the third magnetic resistance element and the fourth magnetic resistance element along with the position from the center of the magnetic flux collecting element is the same but has opposite trend;
the third magneto-resistive element and the fourth magneto-resistive element have the same sensitivity direction and are opposite to the first magneto-resistive element.
3. The magnetic sensor for eliminating manufacturing errors of magnetic flux-concentrating elements of claim 1 further comprising a second pair of magnetic inductances including a third magnetoresistive element and a fourth magnetoresistive element;
the third magnetoresistive element and the fourth magnetoresistive element are both located below the magnetic flux concentrating element in the Z-axis direction;
the direction of the magnetic field component perpendicular to the Z axis at the position of the third magnetic resistance element and the fourth magnetic resistance element is opposite to that of the first magnetic resistance element, and the change rate of the magnitude of the magnetic field component at the position of the third magnetic resistance element and the fourth magnetic resistance element along with the position from the center Z axis of the magnetic flux collecting element is the same but the trend is opposite;
the third magneto-resistive element and the fourth magneto-resistive element have the same sensitivity direction as the first magneto-resistive element.
4. A magnetic sensor for eliminating manufacturing errors of magnetic flux-collecting members according to claim 2 or 3, wherein the first magnetoresistive element and the second magnetoresistive element are connected in series or in parallel to form a first bridge arm; the third magnetic resistance element and the fourth magnetic resistance element are connected in series or in parallel to form a second bridge arm; and the first bridge arm and the second bridge arm form a first half-bridge circuit output signal.
5. The magnetic sensor for eliminating manufacturing errors of magnetic flux-concentrating elements according to claim 4, further comprising a third magnetic induction pair including a fifth magnetoresistive element and a sixth magnetoresistive element, and a fourth magnetic induction pair including a seventh magnetoresistive element and an eighth magnetoresistive element, the fifth magnetoresistive element being in the same sensitivity direction as the sixth magnetoresistive element, the seventh magnetoresistive element being in the same sensitivity direction as the eighth magnetoresistive element.
6. The magnetic sensor for eliminating manufacturing errors of magnetic flux-collecting member according to claim 5, wherein the magnitude of the magnetic field component perpendicular to the Z-axis at the position of the fifth magneto-resistive element and the sixth magneto-resistive element are the same as the magnitude of the change rate of the magnetic field component perpendicular to the Z-axis at the position of the sixth magneto-resistive element from the center of the magnetic flux-collecting member but opposite in direction, the magnitude of the magnetic field component perpendicular to the Z-axis at the position of the seventh magneto-resistive element and the change rate of the magnetic field component perpendicular to the Z-axis at the position of the eighth magneto-resistive element from the center of the magnetic flux-collecting member are the same as the magnitude of the change rate of the magnetic field component perpendicular to the Z-axis from the center of the magnetic flux-collecting member but opposite in direction, wherein the fifth magneto-resistive element and the sixth magneto-resistive element are connected in series or parallel to form a third leg, and the seventh magneto-resistive element and the eighth magneto-resistive element are connected in series or parallel to form a fourth leg; the third bridge arm and the fourth bridge arm form a second half-bridge circuit, and the first half-bridge circuit and the second half-bridge circuit form a first full-bridge structure output signal.
7. The magnetic sensor for eliminating manufacturing errors of magnetic flux-collecting members according to claim 1, wherein the first magneto-resistive element and the second magneto-resistive element are one of XMR magneto-resistive sensors including TMR, AMR, GMR, CMR, SMR, and the material of the magnetic flux-collecting member is a soft magnetic material of high magnetic permeability.
8. A magnetic sensor that eliminates manufacturing errors of a magnetic flux-collecting member, comprising:
a magnetic flux collecting element that distorts the external magnetic field to convert a component of the Z-axis into a component perpendicular to the Z-axis;
four magnetoresistive elements including a ninth magnetoresistive element, a tenth magnetoresistive element, an eleventh magnetoresistive element, and a twelfth magnetoresistive element, the four magnetoresistive elements being located below the magnetic flux collecting element in the Z-axis direction and having the same sensitivity direction;
the direction of the magnetic field component perpendicular to the Z axis, where the ninth magnetic resistance element and the tenth magnetic resistance element are located, is a first direction, the direction of the magnetic field component perpendicular to the Z axis, where the eleventh magnetic resistance element and the twelfth magnetic resistance element are located, is a second direction, and the first direction is opposite to the second direction;
the size of the magnetic field component perpendicular to the Z axis of the position of the ninth magnetic resistance element is the same as that of the magnetic field component perpendicular to the Z axis of the position of the eleventh magnetic resistance element, the size of the magnetic field component perpendicular to the Z axis of the position of the tenth magnetic resistance element is the same as that of the magnetic field component perpendicular to the Z axis of the position of the twelfth magnetic resistance element, and the change rate of the size of the magnetic field component perpendicular to the Z axis of the position of each of the four magnetic resistance elements along with the change rate of the Z axis of the position from the center of the magnetic flux collecting element is the same.
9. The magnetic sensor for eliminating manufacturing errors of magnetic flux-concentrating elements according to claim 8, wherein the ninth magnetoresistive element and the eleventh magnetoresistive element constitute a third half-bridge circuit, the tenth magnetoresistive element and the twelfth magnetoresistive element constitute a fourth half-bridge circuit, the third half-bridge circuit and the fourth half-bridge circuit form a second full-bridge structure output signal, the ninth magnetoresistive element and the tenth magnetoresistive element are located at diagonal positions of the full bridge, and the eleventh magnetoresistive element and the twelfth magnetoresistive element are located at diagonal positions of the full bridge.
10. The magnetic sensor for eliminating manufacturing errors of magnetic flux-collecting members according to claim 8, wherein the four magneto-resistive elements are one of XMR magneto-resistive sensors including TMR, AMR, GMR, CMR, SMR, and the material of the magnetic flux-collecting members is a soft magnetic material of high magnetic permeability.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310499132.2A CN116224190B (en) | 2023-05-06 | 2023-05-06 | Magnetic sensor for eliminating manufacturing error of magnetic flux collecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310499132.2A CN116224190B (en) | 2023-05-06 | 2023-05-06 | Magnetic sensor for eliminating manufacturing error of magnetic flux collecting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116224190A CN116224190A (en) | 2023-06-06 |
| CN116224190B true CN116224190B (en) | 2023-09-05 |
Family
ID=86573502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310499132.2A Active CN116224190B (en) | 2023-05-06 | 2023-05-06 | Magnetic sensor for eliminating manufacturing error of magnetic flux collecting element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116224190B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117054936B (en) * | 2023-10-12 | 2024-01-12 | 江苏多维科技有限公司 | Gradient sensor |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008002876A (en) * | 2006-06-21 | 2008-01-10 | Fuji Electric Systems Co Ltd | Current sensor and electronic watthour meter |
| CN103339672A (en) * | 2011-01-31 | 2013-10-02 | 艾沃思宾技术公司 | Fabrication process and layout for magnetic sensor arrays |
| CN105408756A (en) * | 2013-07-22 | 2016-03-16 | 森斯泰克有限公司 | Multicomponent magnetic field sensor |
| CN109270474A (en) * | 2017-07-17 | 2019-01-25 | 爱盛科技股份有限公司 | Magnetic field sensing element and field sensing unit |
| CN111596239A (en) * | 2020-06-15 | 2020-08-28 | 北京航空航天大学 | Magnetic sensor with single-chip integrated three-axis tunneling magnetoresistance and preparation method thereof |
| CN113030804A (en) * | 2021-03-01 | 2021-06-25 | 歌尔微电子股份有限公司 | Sensor and electronic device |
| CN113532486A (en) * | 2020-04-20 | 2021-10-22 | Tdk株式会社 | Magnetic sensor, magnetic encoder, and lens detection device |
| CN115980639A (en) * | 2022-12-15 | 2023-04-18 | 江苏多维科技有限公司 | Magnetic resistance sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103267520B (en) * | 2013-05-21 | 2016-09-14 | 江苏多维科技有限公司 | A kind of three axle digital compasses |
-
2023
- 2023-05-06 CN CN202310499132.2A patent/CN116224190B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008002876A (en) * | 2006-06-21 | 2008-01-10 | Fuji Electric Systems Co Ltd | Current sensor and electronic watthour meter |
| CN103339672A (en) * | 2011-01-31 | 2013-10-02 | 艾沃思宾技术公司 | Fabrication process and layout for magnetic sensor arrays |
| CN105408756A (en) * | 2013-07-22 | 2016-03-16 | 森斯泰克有限公司 | Multicomponent magnetic field sensor |
| CN109270474A (en) * | 2017-07-17 | 2019-01-25 | 爱盛科技股份有限公司 | Magnetic field sensing element and field sensing unit |
| CN113532486A (en) * | 2020-04-20 | 2021-10-22 | Tdk株式会社 | Magnetic sensor, magnetic encoder, and lens detection device |
| CN111596239A (en) * | 2020-06-15 | 2020-08-28 | 北京航空航天大学 | Magnetic sensor with single-chip integrated three-axis tunneling magnetoresistance and preparation method thereof |
| WO2021253600A1 (en) * | 2020-06-15 | 2021-12-23 | 北京航空航天大学 | Magnetic sensor of monolithic integrated three-axis tunnel magnetoresistance and preparation method therefor |
| CN113030804A (en) * | 2021-03-01 | 2021-06-25 | 歌尔微电子股份有限公司 | Sensor and electronic device |
| CN115980639A (en) * | 2022-12-15 | 2023-04-18 | 江苏多维科技有限公司 | Magnetic resistance sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116224190A (en) | 2023-06-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8587299B2 (en) | Magnetic field sensor | |
| JP6525335B2 (en) | Single chip bridge type magnetic field sensor | |
| KR100918978B1 (en) | Magnetoresistive angle sensor having several sensing elements | |
| JP6189426B2 (en) | Magnetoresistive gear sensor | |
| CN116224190B (en) | Magnetic sensor for eliminating manufacturing error of magnetic flux collecting element | |
| US20130300402A1 (en) | Method and structure for testing and calibrating three axis magnetic field sensing devices | |
| US9702943B2 (en) | Single chip push-pull bridge-type magnetic field sensor | |
| US11346901B2 (en) | Anisotropic magnetoresistive (AMR) sensor without set and reset device | |
| CN103389479B (en) | The dynamic-range sensor improved | |
| CN110231494A (en) | Magnetic speed sensor with distributed Wheatstone bridge | |
| CN202210144U (en) | Single-chip reference full-bridge magnetic field sensor | |
| US20140266187A1 (en) | Magnetic sensor utilizing magnetization reset for sense axis selection | |
| CN111596239A (en) | Magnetic sensor with single-chip integrated three-axis tunneling magnetoresistance and preparation method thereof | |
| CN103645448A (en) | Improved Wheatstone half-bridge circuit and sensor | |
| CN116087588B (en) | Current sensor for resisting external field interference | |
| CN111044953A (en) | Single-chip full-bridge TMR magnetic field sensor | |
| CN210773869U (en) | Magnetoresistive position sensor | |
| CN107131819B (en) | Single-axis micro-mechanical displacement sensor based on tunnel magnetoresistance effect | |
| CN206649142U (en) | A kind of array magneto-dependent sensor for improving signal to noise ratio | |
| CN110286340B (en) | Serial-type triaxial integration magnetic sensor | |
| CN116224189B (en) | Correction method for magnetic flux gathering element position error in magnetic sensor | |
| CN212008887U (en) | Single-chip full-bridge TMR magnetic field sensor | |
| CN117054936B (en) | Gradient sensor | |
| JP4316836B2 (en) | Magnetic sensor | |
| CN203337153U (en) | Triaxial digital compass |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |