CN107807255A - A kind of tunnel magnetoresistive formula accelerometer device based on micro hydraulic amplification - Google Patents
A kind of tunnel magnetoresistive formula accelerometer device based on micro hydraulic amplification Download PDFInfo
- Publication number
- CN107807255A CN107807255A CN201710975734.5A CN201710975734A CN107807255A CN 107807255 A CN107807255 A CN 107807255A CN 201710975734 A CN201710975734 A CN 201710975734A CN 107807255 A CN107807255 A CN 107807255A
- Authority
- CN
- China
- Prior art keywords
- accelerometer
- hydraulic pressure
- adjustment electrode
- tunnel
- spacing adjustment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0862—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
- Hall/Mr Elements (AREA)
Abstract
The invention discloses a kind of tunnel magnetoresistive formula accelerometer device based on micro hydraulic amplification, including top layer acceleration transformational structure, intermediate layer hydraulic pressure structure for amplifying and bottom layer signal sensitive structure, top layer acceleration transformational structure includes mass, mass substrate;Intermediate layer hydraulic pressure structure for amplifying includes screened film, hydraulic amplifier, hydraulic pressure structure for amplifying body;Bottom layer signal sensitive structure includes tunnel magnetoresistive excitation structure, the first tunnel magneto-resistive sensor, the second tunnel magneto-resistive sensor, spacing adjustment electrode, insulating barrier, pedestal.The tunnel magnetoresistive formula accelerometer device based on micro hydraulic amplification of the present invention, the tunnel magnetoresistive formula accelerometer integrated micro hydraulic amplifier on accelerometer first based on micro hydraulic amplification and space change magnetic field intensity, both ensured that top mass can obtain larger movement angle (wide range), further through hydraulic amplifier displacement enlargement, have the advantages that simple in construction, high sensitivity, measurement accuracy are high.
Description
Technical field
The invention belongs to MEMS (MEMS) and Mierotubule-associated proteins technical field, and in particular to a kind of tunnel magnetoresistive formula
Accelerometer device.
Background technology
Existing tunnel effect micro-acceleration gauge, the general current effect used in tunnel-effect is, it is necessary to costly energy
The tunnel point and mass nano gap of accelerometer are controlled by processing technology and precision mechanism, technique realizes complicated and control difficulty
It is high.
The content of the invention
Goal of the invention:A kind of tunnel magnetoresistive formula accelerometer device based on micro hydraulic amplification of the present invention, it is extraneous defeated
Enter rotation displacement caused by acceleration to be amplified by hydraulic module, cause the magnetic field around tunnel magneto-resistive sensor to become
Change, and then the size of input acceleration is obtained by the measurement to tunnel magnetoresistive size, solve existing tunnel effect acceleration
Existing complicated, control requires the problems such as high, precision and range mutually restrict.
Technical scheme:A kind of tunnel magnetoresistive formula accelerometer device based on micro hydraulic amplification of the present invention, including top
Layer acceleration transformational structure, intermediate layer hydraulic pressure structure for amplifying and bottom layer signal sensitive structure, intermediate layer hydraulic pressure structure for amplifying are located at
Between top layer acceleration transformational structure and bottom layer signal sensitive structure, intermediate layer hydraulic pressure structure for amplifying is added by screened film and top layer
Speedometer transformational structure is connected and is connected by screened film with bottom layer signal sensitive structure.
Preferably, top layer acceleration transformational structure includes mass, mass substrate;Intermediate layer hydraulic pressure structure for amplifying includes
Screened film, hydraulic amplifier, hydraulic pressure structure for amplifying body;Bottom layer signal sensitive structure includes tunnel magnetoresistive excitation structure, the first tunnel
Road magnetoresistive transducer, the second tunnel magneto-resistive sensor, the first spacing adjustment electrode, the second spacing adjustment electrode, the 3rd spacing are adjusted
Whole electrode, the 4th spacing adjustment electrode, insulating barrier, pedestal, tunnel magnetoresistive excitation structure two end electrodes apply voltage so as to
Electric current is formed in tunnel magnetoresistive excitation sensor and produces local magnetic field, when acceleration signal inputs along direction, mass production
Raw to produce corresponding rotation displacement along direction, displacement signal is realized through hydraulic amplifier to be amplified and causes tunnel magnetoresistive excitation knot
The spacing of structure and the first tunnel magneto-resistive sensor, the second tunnel magneto-resistive sensor changes, so as to cause the first tunnel magnetoresistive
Magnetic field around sensor, the second tunnel magneto-resistive sensor changes, by the first tunnel magneto-resistive sensor, the second tunnel
The measurement of magnetoresistive transducer resistance is so as to realizing the measurement to extraneous input acceleration.
Preferably, mass is connected with mass substrate and is located at the surface of mass substrate center position, quality
Block substrate is connected with hydraulic pressure structure for amplifying body phase and is located at the top of hydraulic pressure structure for amplifying body center.
Preferably, hydraulic pressure structure for amplifying in intermediate layer is disposed with screened film directly over hydraulic pressure structure for amplifying body interior surface
With and arranged just beneath have symmetrical screened film, screened film is on the left and right center line of accelerometer overall structure (CD) two
Side is symmetrical, and the base of hydraulic pressure structure for amplifying body uses the form and the integrally-built pedestal phase of accelerometer of middle hollow out
Connection, the top of hydraulic amplifier is connected with screened film, and the bottom of hydraulic amplifier is connected with screened film respectively, hydraulic pressure
It is symmetrical that amplifier is located at the left and right center line of accelerometer overall structure (CD) both sides.
Preferably, the latter half of bottom layer signal sensitive structure is disposed with insulating barrier, insulating barrier in the positive upper surface of pedestal
Surrounding be connected with the side of hydraulic pressure structure for amplifying body four of intermediate layer hydraulic pressure structure for amplifying;First is disposed with directly over insulating barrier
Tunnel magneto-resistive sensor, the second tunnel magneto-resistive sensor, the first spacing adjustment electrode, the second spacing adjustment electrode, the 3rd spacing
Adjust electrode, the 4th spacing adjustment electrode;First tunnel magneto-resistive sensor, the second tunnel magneto-resistive sensor are from top to lower cloth respectively
Top layer electrode, free layer, tunnel barrier layer, ferromagnetic layer, inverse ferric magnetosphere, bottom electrode are equipped with, while the first tunnel magnetoresistive senses
Device, the second tunnel magneto-resistive sensor are centrally located on the forward and backward center line of accelerometer overall structure and whole on accelerometer
The left and right center line of body structure (CD) is symmetrical, the first spacing adjustment electrode, the second spacing adjustment electrode, the adjustment of the 3rd spacing
Electrode, the 4th spacing adjustment electrode are located at the side of left, right, front and rear four of insulating barrier, and the first spacing adjustment electrode, the second spacing are adjusted
Whole electrode is symmetrical on the left and right center line of accelerometer overall structure and the first spacing adjustment electrode, the second spacing adjust
The midpoint of electrode is located on the forward and backward center line of accelerometer overall structure (AB), the 3rd spacing adjustment electrode, the adjustment of the 4th spacing
Electrode is symmetrical on the forward and backward center line of accelerometer overall structure (AB) and the first spacing adjustment electrode, the second spacing are adjusted
The midpoint of whole electrode is located on the left and right center line of accelerometer overall structure (CD);The top half of bottom layer signal sensitive structure
There is insulating barrier in the positive lower surface disposed outside of hydraulic pressure structure for amplifying body, the back side of insulating barrier is disposed with band magnetic resistance excitation structure,
Tunnel magnetoresistive excitation structure is made up of tunnel magnetoresistive excitation structure two end electrodes and tunnel magnetoresistive excitation sensor.
Preferably, mass and mass substrate use cylindrical structure, and the center of circle position of mass and mass substrate
Put and coincide, mass is located at the surface of mass substrate;Mass substrate arranged in the upper surface of hydraulic pressure structure for amplifying body,
And it is connected with the screened film of hydraulic pressure structure for amplifying body inside upper surface.
Preferably, insulating barrier is arranged in the surface of pedestal, is disposed with the first tunnel magneto-resistive sensor, on the insulating layer
Two tunnel magneto-resistive sensors, the first spacing adjustment electrode, the second spacing adjustment electrode, the 3rd spacing adjustment electrode, the 4th spacing
Adjust electrode;First tunnel magneto-resistive sensor, the second tunnel magneto-resistive sensor are in series by rectangular block with serpentine configuration, and the
One tunnel magneto-resistive sensor, the second tunnel magneto-resistive sensor are centrally located at the forward and backward center line of accelerometer overall structure (AB)
It is upper and symmetrical on the left and right center line of accelerometer overall structure (CD);First spacing adjustment electrode, the adjustment of the second spacing
Electrode, the 3rd spacing adjustment electrode, the 4th spacing adjustment electrode are located at the side of left, right, front and rear four of insulating barrier, and the first spacing is adjusted
Whole electrode, electrode is symmetrical on the left and right center line of accelerometer overall structure (CD) and the first spacing for the adjustment of the second spacing
Adjustment electrode, the second spacing adjustment electrode are centrally located on the forward and backward center line of accelerometer overall structure (AB);Third space
Adjust electrode, electrode is symmetrical on the forward and backward center line of accelerometer overall structure (AB) and the first spacing for the adjustment of four gaps
Adjustment electrode, the second spacing adjustment electrode are centrally located on the left and right center line of accelerometer overall structure (CD).
Preferably, the back side of hydraulic pressure structure for amplifying body is disposed with insulating barrier, and under insulating barrier and hydraulic pressure structure for amplifying body
The central point on surface coincides;The back side of insulating barrier is disposed with tunnel magnetoresistive excitation structure, tunnel magnetoresistive excitation structure inside tunnel
Road magnetic resistance excitation sensor is connected using " snakelike " topological structure, and " snakelike " topological structure is centrosymmetric on central point,
The magnetic field that can be distributed on central point.
Preferably, screened film is located at the lower inner surface of hydraulic pressure structure for amplifying body, and screened film is located at hydraulic pressure structure for amplifying body
Upper inside surface, hydraulic pressure amplification module is made up of support section and lever amplification part, and hydraulic pressure amplification module is positioned at shielding
Between film and screened film, the support section of hydraulic pressure amplification module is connected with screened film respectively, and the bar thick stick of hydraulic pressure amplification module is put
It is most of to be connected respectively with the arranged on left and right sides of screened film;Support section, the peripheral boundary of screened film are by hydraulic pressure structure for amplifying body
Surround, and the peripheral boundary of screened film is in the external boundary of support section;Support section is centrally located at accelerometer overall structure
On forward and backward center line (AB), and support section is symmetrical on the left and right center line of accelerometer overall structure (CD);Shielding
The peripheral boundary of film is centrally located on the forward and backward center line of accelerometer overall structure (AB), and the peripheral boundary of screened film on
The left and right center line of accelerometer overall structure (CD) is symmetrical;The center line of lever amplification part is located at accelerometer entirety
On the forward and backward center line of structure (AB), and lever amplification part is symmetrically divided on the left and right center line of accelerometer overall structure (CD)
Cloth;The top of support section is visible, and the center line of support section is located on the forward and backward center line of accelerometer overall structure (AB),
And support section is symmetrical on the left and right center line of accelerometer overall structure (CD).
Beneficial effect:
(1) the tunnel magnetoresistive formula accelerometer proposed by the present invention based on micro hydraulic amplification has simple in construction, sensitive
The advantages that degree is high, measurement accuracy is high;
(2) MEMS technology is utilized, is really integrated with miniature excitation component and highly sensitive tunnel first on accelerometer
Road magnetoresistive transducer, greatly improve the shreshold detection capability of accelerometer;
(3) the integrated micro hydraulic amplifier on accelerometer first, it is larger both to have ensured that top mass can obtain
Movement angle (wide range), further through hydraulic amplifier displacement enlargement, ensureing can also when minimum acceleration input
Larger space change is obtained, further increases the detectable limit (detectable limit of high-precision quantum tunnel magnetoresistive accelerometer
Sensitivity), the shortcomings that overcoming conventional tunnel formula accelerometer range and detectable limit sensitivity simultaneously compatible completely;
(4) spring beam in conventional tunnel formula accelerometer is thoroughly eliminated, using micro hydraulic device transmission campaign, is advantageous to
The acceleration gap of excitation component and tunnel magneto-resistive sensor is further reduced, sensitivity can be improved, while overcome tradition
Tunnel type acceleration can not resist the adverse circumstances such as vibratory impulse, and can not be engineered and not have the defects of practicality.
Brief description of the drawings
Fig. 1 is the general structure horizontal section front view of the present invention;
Fig. 2 is the general structure longitudinal profile right view of the present invention;
Fig. 3 is the top layer top view of the present invention;
Fig. 4 is the bottom layer signal sensitive structure top view of the present invention;
Fig. 5 is the bottom layer signal sensitive structure upward view of the present invention;
Fig. 6 is the hydraulic pressure structure for amplifying horizontal section front view of the present invention;
Fig. 7 is the hydraulic pressure structure for amplifying upward view of the present invention;
Fig. 8 is the hydraulic pressure structure for amplifying top view of the present invention.
Embodiment
To further understand the present invention, the present invention is further explained below in conjunction with the accompanying drawings.
As depicted in figs. 1 and 2, a kind of tunnel magnetoresistive formula accelerometer based on micro hydraulic amplification of the invention includes top
Layer acceleration transformational structure, intermediate layer hydraulic pressure structure for amplifying and bottom layer signal sensitive structure, intermediate layer hydraulic pressure structure for amplifying are located at
Between top layer acceleration transformational structure and bottom layer signal sensitive structure, intermediate layer hydraulic pressure structure for amplifying passes through screened film 5 and top layer
Accelerometer transformational structure is connected and is connected by screened film 9,11 with bottom layer signal sensitive structure.Wherein, top layer accelerates
Degree transformational structure is made up of mass 1, mass substrate 4;Intermediate layer hydraulic pressure structure for amplifying is amplified by screened film 5,9,11, hydraulic pressure
Device 7,8, hydraulic pressure structure for amplifying body 6 are formed;Bottom layer signal sensitive structure includes tunnel magnetoresistive excitation structure 12, the first tunnel magnetoresistive
Sensor 20, the second tunnel magneto-resistive sensor 21, the first spacing adjustment electrode 17, the second spacing adjustment electrode 18, the 3rd spacing
Adjust electrode 29, the 4th spacing adjustment electrode 30, insulating barrier 19, pedestal 28.The two end electrodes 14 of tunnel magnetoresistive excitation structure 12,
16 apply voltages so as in tunnel magnetoresistive excitation sensor 15 formed electric current produce local magnetic field 10, when acceleration signal along
When direction 2 inputs, mass 1 produces along direction 3 and produces corresponding rotation displacement, and displacement signal is real through hydraulic amplifier 7,8
Now amplify and cause between the tunnel magneto-resistive sensor 20 of tunnel magnetoresistive excitation structure 12 and first, the second tunnel magneto-resistive sensor 21
Away from changing, so as to cause the first tunnel magneto-resistive sensor 20, the magnetic field around the second tunnel magneto-resistive sensor 21 to change
Become, it is defeated to the external world so as to realize by the measurement to the first tunnel magneto-resistive sensor 20, the resistance of the second tunnel magneto-resistive sensor 21
Enter the measurement of acceleration.
Top layer acceleration transformational structure includes mass 1, mass substrate 4, and mass 1 is connected with mass substrate 4
And positioned at the surface of the center of mass substrate 4, mass substrate 4 is connected with hydraulic pressure structure for amplifying body 6 and is located at liquid
Press the top of the center of big structure body 6.
Intermediate layer hydraulic pressure structure for amplifying is disposed with screened film 5 and just directly over the interior surface of hydraulic pressure structure for amplifying body 6
Arranged beneath has symmetrical screened film 9,11, and screened film 9,11 is on the left and right center line of accelerometer overall structure (CD)
Both sides are symmetrical, and the base of hydraulic pressure structure for amplifying body 6 uses the form and the integrally-built base of accelerometer of middle hollow out
Seat 28 is connected.The top of hydraulic amplifier 7,8 is connected with screened film 9, and the bottom of hydraulic amplifier 7,8 respectively with shielding
Film 9,11 is connected, and it is symmetrical that hydraulic amplifier 7,8 is located at the left and right center line of accelerometer overall structure (CD) both sides.
The latter half of bottom layer signal sensitive structure is disposed with insulating barrier 19 in the positive upper surface of pedestal 28, insulating barrier 19
Surrounding is connected with the side of hydraulic pressure structure for amplifying body 6 four of intermediate layer hydraulic pressure structure for amplifying;The surface of insulating barrier 19 is disposed with
One tunnel magneto-resistive sensor 20, the second tunnel magneto-resistive sensor 21, the first spacing adjustment electrode 17, the second spacing adjustment electrode
18th, the 3rd spacing adjustment electrode 29, the 4th spacing adjustment electrode 30;First tunnel magneto-resistive sensor 20, the second tunnel magnetoresistive pass
Sensor 21 from top be respectively disposed with top layer electrode 22, free layer 23, tunnel barrier layer 24, ferromagnetic layer 25, inverse ferric magnetosphere 26,
Bottom electrode 27, while the first tunnel magneto-resistive sensor 20, that the second tunnel magneto-resistive sensor 21 is centrally located at accelerometer is whole
It is on the forward and backward center line of body structure (AB) and symmetrical on the left and right center line of accelerometer overall structure (CD), the first spacing
Adjustment electrode 17, the second spacing adjustment electrode 18, the 3rd spacing adjustment electrode 29, the 4th spacing adjustment electrode 30 are located at insulating barrier
19 side of left, right, front and rear four, the first spacing adjustment electrode 17, the second spacing adjust electrode 18 on accelerometer overall structure
(CD) left and right center line is symmetrical and the first spacing adjustment electrode 17, the midpoint of the second spacing adjustment electrode 18 are positioned at acceleration
On the degree meter forward and backward center line of overall structure (AB), the 3rd spacing adjustment electrode 29, the 4th spacing adjust electrode 30 on acceleration
Count in the symmetrical forward and backward center line of overall structure (AB) and the first spacing adjustment electrode 17, the second spacing adjustment electrode 18
Point is on the left and right center line of accelerometer overall structure (CD);The top half of bottom layer signal sensitive structure is amplified in hydraulic pressure
The positive lower surface disposed outside of structure 6 has insulating barrier 12, and the back side of insulating barrier 12 is disposed with band magnetic resistance excitation structure 13, tunnel
Magnetic resistance excitation structure 13 is made up of tunnel magnetoresistive excitation structure two end electrodes 14,16 and tunnel magnetoresistive excitation sensor 15.
As shown in figure 3, from top layer top view, mass 1 and mass substrate 4 use cylindrical structure, and mass 1 with
The home position of mass substrate 4 coincides, and mass 1 is located at the surface of mass substrate 4;Mass substrate 4 is arranged in
The upper surface of hydraulic pressure structure for amplifying body 6, and be connected with the screened film 5 of the inside upper surface of hydraulic pressure structure for amplifying body 6.
As shown in figure 4, from bottom layer signal sensitive structure top view, insulating barrier 19 is arranged in the surface of pedestal 28, exhausted
The first tunnel magneto-resistive sensor 20, the second tunnel magneto-resistive sensor 21, the first spacing adjustment electrode 17, the are disposed with edge layer 19
Two spacing adjustment electrode 18, the 3rd spacing adjustment electrode 29, the 4th spacing adjustment electrode 30;First tunnel magneto-resistive sensor 20,
Second tunnel magneto-resistive sensor 21 is in series by rectangular block with serpentine configuration, and the first tunnel magneto-resistive sensor 20, the second tunnel
Road magnetoresistive transducer 21 is centrally located on the forward and backward center line of accelerometer overall structure (AB) and integrally tied on accelerometer
The left and right center line of structure (CD) is symmetrical;First spacing adjustment electrode 17, the second spacing adjustment electrode 18, the adjustment of the 3rd spacing
Electrode 29, the 4th spacing adjustment electrode 30 be located at the side of left, right, front and rear four of insulating barrier 19, and the first spacing adjusts electrode 17, the
Two spacing adjustment electrode 18 is symmetrical on the left and right center line of accelerometer overall structure (CD) and the first spacing adjusts electrode
17th, the second spacing adjustment electrode 18 is centrally located on the forward and backward center line of accelerometer overall structure (AB);3rd spacing adjusts
Electrode 29, the 4th spacing adjustment electrode 30 it is symmetrical on the forward and backward center line of accelerometer overall structure (AB) and first between
It is centrally located at away from adjustment electrode 17, the second spacing adjustment electrode 18 on the left and right center line of accelerometer overall structure (CD).
As shown in figure 5, from bottom layer signal sensitive structure upward view, the back side of hydraulic pressure structure for amplifying body 6 is disposed with insulating barrier
12, and insulating barrier 12 and the central point of the lower surface of hydraulic pressure structure for amplifying body 6 coincide;The back side of insulating barrier 12 is disposed with tunnel
Magnetic resistance excitation structure 13, the internal tunnel magnetic resistance excitation sensor 15 of tunnel magnetoresistive excitation structure 13 use " snakelike " topological structure phase
Connection, " snakelike " topological structure are centrosymmetric on central point, the magnetic field that can be distributed on central point.
As shown in fig. 6, amplifying integrally-built front view from hydraulic pressure, screened film 9,11 is located at hydraulic pressure structure for amplifying body 6
Lower inner surface, screened film 5 are located at the upper inside surface of hydraulic pressure structure for amplifying body 6, and hydraulic pressure amplification module 7,9 is by support section
32nd, 34 and lever amplification part 31,33 form, and hydraulic pressure amplification module 7,9 is between screened film 9,11 and screened film 5, liquid
The support section 32,34 of pressure amplification module 7,9 is connected with screened film 9,11 respectively, the bar thick stick amplification of hydraulic pressure amplification module 7,9
31,33 arranged on left and right sides respectively with screened film 5 of part is connected.
As shown in fig. 7, amplify integrally-built upward view, support section 32,34, the periphery sides of screened film 9,11 from hydraulic pressure
Boundary is surrounded by hydraulic pressure structure for amplifying body 6, and the peripheral boundary of screened film 9,11 is in the external boundary of support section 32,34;Supporting part
32,34 are divided to be centrally located on the forward and backward center line of accelerometer overall structure (AB), and support section 32,34 is on acceleration
It is symmetrical to count the left and right center line of overall structure (CD);The peripheral boundary of screened film 9,11 is centrally located at accelerometer and integrally tied
On the forward and backward center line of structure (AB), and the peripheral boundary of screened film 9,11 is on the left and right center line of accelerometer overall structure (CD)
It is symmetrical.
As shown in figure 8, amplifying integrally-built top view from hydraulic pressure, screened film 5 is transparent part, does not consider it in figure
In the presence of the center line of lever amplification part 31,33 is located on the forward and backward center line of accelerometer overall structure (AB), and lever is put
Most of 31,33 is symmetrical on the left and right center line of accelerometer overall structure (CD);The top of support section 32,34 can
See, the center line of support section 32,34 is located on the forward and backward center line of accelerometer overall structure (AB), and support section 32,34
It is symmetrical on the left and right center line of accelerometer overall structure (CD).
In summary, the tunnel magnetoresistive formula accelerometer of the invention based on micro hydraulic amplification is by the way that accelerometer is turned
Be changed to the change of magnetic direction, intensity, then utilize magnetoresistive transducer based on tunnel magneto-resistance effect detect the change in magnetic field from
And the measurement of acceleration is realized, necessary nano gap is directly obtained by thin film deposition wherein in tunnel magneto-resistance effect, real
It is now simple;Integrated hydraulic amplification module simultaneously, amplification and diminution to rotation displacement can be achieved, there is higher sensitivity and survey
Measure scope, the problem of existing acceleration measuring accuracy of measurement and range of solution mutually restrict.
Claims (9)
- A kind of 1. tunnel magnetoresistive formula accelerometer device based on micro hydraulic amplification, it is characterised in that:Including top layer acceleration Transformational structure, intermediate layer hydraulic pressure structure for amplifying and bottom layer signal sensitive structure, intermediate layer hydraulic pressure structure for amplifying are located at top layer acceleration Spend between transformational structure and bottom layer signal sensitive structure, intermediate layer hydraulic pressure structure for amplifying passes through screened film (5) and top layer acceleration Meter transformational structure is connected and is connected by screened film (9,11) with bottom layer signal sensitive structure.
- 2. the tunnel magnetoresistive formula accelerometer device according to claim 1 based on micro hydraulic amplification, top layer acceleration Transformational structure includes mass (1), mass substrate (4);Intermediate layer hydraulic pressure structure for amplifying includes screened film (5,9,11), hydraulic pressure Amplifier (7,8), hydraulic pressure structure for amplifying body (6);Bottom layer signal sensitive structure includes tunnel magnetoresistive excitation structure (12), the first tunnel Road magnetoresistive transducer (20), the second tunnel magneto-resistive sensor (21), the first spacing adjustment electrode (17), the second spacing adjustment electrode (18), the 3rd spacing adjustment electrode (29), the 4th spacing adjustment electrode (30), insulating barrier (19), pedestal (28), in tunnel magnetoresistive Excitation structure (12) two end electrodes (14,16) apply voltage and produced so as to form electric current in tunnel magnetoresistive excitation sensor (15) Local magnetic field (10), when acceleration signal inputs along direction (2), mass (1) produces to be produced accordingly along direction (3) Rotation displacement, displacement signal is realized through hydraulic amplifier (7,8) to be amplified and causes tunnel magnetoresistive excitation structure (12) and the first tunnel Road magnetoresistive transducer (20), the spacing of the second tunnel magneto-resistive sensor (21) change, so as to cause the first tunnel magnetoresistive to pass Magnetic field around sensor (20), the second tunnel magneto-resistive sensor (21) changes, by the first tunnel magneto-resistive sensor (20), the measurement of the second tunnel magneto-resistive sensor (21) resistance is so as to realizing the measurement to extraneous input acceleration.
- 3. the tunnel magnetoresistive formula accelerometer device according to claim 2 based on micro hydraulic amplification, it is characterised in that: Mass (1) is connected with mass substrate (4) and positioned at the surface of mass substrate (4) center, mass substrate (4) it is connected and positioned at the top of hydraulic pressure structure for amplifying body (6) center with hydraulic pressure structure for amplifying body (6).
- 4. the tunnel magnetoresistive formula accelerometer device according to claim 2 based on micro hydraulic amplification, it is characterised in that: Intermediate layer hydraulic pressure structure for amplifying be disposed with directly over hydraulic pressure structure for amplifying body (6) interior surface screened film (5) and and just under Side is disposed with symmetrical screened film (9,11), and screened film (9,11) is on the left and right center line of accelerometer overall structure (CD) both sides are symmetrical, and the base of hydraulic pressure structure for amplifying body (6) uses the form of middle hollow out integrally to be tied with accelerometer The pedestal (28) of structure is connected, and the top of hydraulic amplifier (7,8) is connected with screened film (9), and hydraulic amplifier (7,8) Bottom is connected with screened film (9,11) respectively, and hydraulic amplifier (7,8) is located at the left and right center line of accelerometer overall structure (CD) both sides are symmetrical.
- 5. the tunnel magnetoresistive formula accelerometer device according to claim 2 based on micro hydraulic amplification, it is characterised in that: The latter half of bottom layer signal sensitive structure is disposed with insulating barrier (19) in the positive upper surface of pedestal (28), and the four of insulating barrier (19) Week is connected with the side of hydraulic pressure structure for amplifying body (6) four of intermediate layer hydraulic pressure structure for amplifying;Insulating barrier is disposed with directly over (19) First tunnel magneto-resistive sensor (20), the second tunnel magneto-resistive sensor (21), the first spacing adjustment electrode (17), the second spacing are adjusted Whole electrode (18), the 3rd spacing adjustment electrode (29), the 4th spacing adjustment electrode (30);First tunnel magneto-resistive sensor (20), Second tunnel magneto-resistive sensor (21) is respectively disposed with top layer electrode (22), free layer (23), tunnel barrier layer under from top (24), ferromagnetic layer (25), inverse ferric magnetosphere (26), bottom electrode (27), while the first tunnel magneto-resistive sensor (20), the second tunnel Magnetoresistive transducer (21) is centrally located on the forward and backward center line of accelerometer overall structure (AB) and integrally tied on accelerometer The left and right center line of structure (CD) is symmetrical, the first spacing adjustment electrode (17), the second spacing adjustment electrode (18), the 3rd spacing Adjustment electrode (29), the 4th spacing adjustment electrode (30) are located at the side of left, right, front and rear four of insulating barrier (19), the adjustment of the first spacing Electrode (17), the second spacing adjustment electrode (18) are symmetrical on accelerometer overall structure (CD) left and right center line and the One spacing adjustment electrode (17), the midpoint of the second spacing adjustment electrode (18) are located at the forward and backward center line of accelerometer overall structure (AB) on, the 3rd spacing adjustment electrode (29), the 4th spacing adjustment electrode (30) are on the forward and backward center of accelerometer overall structure Line (AB) is symmetrical and the first spacing adjustment electrode (17), that the midpoint of the second spacing adjustment electrode (18) is located at accelerometer is whole On the left and right center line of body structure (CD);The top half of bottom layer signal sensitive structure is in hydraulic pressure structure for amplifying body (6) positive lower surface Disposed outside has insulating barrier (12), and the back side of insulating barrier (12) is disposed with band magnetic resistance excitation structure (13), tunnel magnetoresistive excitation Structure (13) is made up of tunnel magnetoresistive excitation structure two end electrodes (14,16) and tunnel magnetoresistive excitation sensor (15).
- 6. the tunnel magnetoresistive formula accelerometer device according to claim 2 based on micro hydraulic amplification, it is characterised in that: Mass (1) and mass substrate (4) use cylindrical structure, and the home position phase of mass (1) and mass substrate (4) Overlap, mass (1) is located at the surface of mass substrate (4);Mass substrate (4) is arranged in hydraulic pressure structure for amplifying body (6) Upper surface, and be connected with the screened film (5) of hydraulic pressure structure for amplifying body (6) inside upper surface.
- 7. the tunnel magnetoresistive formula accelerometer device based on micro hydraulic amplification according to claim 2 or 5, its feature exist In:Insulating barrier (19) is arranged in the surface of pedestal (28), and the first tunnel magneto-resistive sensor is disposed with insulating barrier (19) (20), between the second tunnel magneto-resistive sensor (21), the first spacing adjustment electrode (17), the second spacing adjustment electrode (18), the 3rd Away from adjustment electrode (29), the 4th spacing adjustment electrode (30);First tunnel magneto-resistive sensor (20), the second tunnel magneto-resistive sensor (21) it is in series by rectangular block with serpentine configuration, and the first tunnel magneto-resistive sensor (20), the second tunnel magneto-resistive sensor (21) be centrally located on the forward and backward center line of accelerometer overall structure (AB) and on accelerometer overall structure it is left and right in Heart line (CD) is symmetrical;First spacing adjustment electrode (17), the second spacing adjustment electrode (18), the 3rd spacing adjustment electrode (29), the 4th spacing adjustment electrode (30) is located at the side of left, right, front and rear four of insulating barrier (19), the first spacing adjustment electrode (17), the second spacing adjustment electrode (18) it is symmetrical on the left and right center line of accelerometer overall structure (CD) and first between The forward and backward center line of accelerometer overall structure (AB) is centrally located at away from adjustment electrode (17), the second spacing adjustment electrode (18) On;Third space adjustment electrode (29), four gaps adjustment electrode (30) are on the forward and backward center line of accelerometer overall structure (AB) Symmetrical and the first spacing adjustment electrode (17), the second spacing adjustment electrode (18) are centrally located at accelerometer overall structure On left and right center line (CD).
- 8. the tunnel magnetoresistive formula accelerometer device based on micro hydraulic amplification according to claim 2 or 5, its feature exist In:The back side of hydraulic pressure structure for amplifying body (6) is disposed with insulating barrier (12), and insulating barrier (12) and hydraulic pressure structure for amplifying body (6) The central point of lower surface coincides;The back side of insulating barrier (12) is disposed with tunnel magnetoresistive excitation structure (13), tunnel magnetoresistive excitation Structure (13) internal tunnel magnetic resistance excitation sensor (15) is connected using " snakelike " topological structure, " snakelike " topological structure on Central point is centrosymmetric, the magnetic field that can be distributed on central point.
- 9. the tunnel magnetoresistive formula accelerometer device based on micro hydraulic amplification according to claim 2 or 4, its feature exist In:Screened film (9,11) is located at the lower inner surface of hydraulic pressure structure for amplifying body (6), and screened film (5) is located at hydraulic pressure structure for amplifying body (6) upper inside surface, hydraulic pressure amplification module (7,9) are made up of support section (32,34) and lever amplification part (31,33), And hydraulic pressure amplification module (7,9) is located between screened film (9,11) and screened film (5), the supporting part of hydraulic pressure amplification module (7,9) (32,34) are divided to be connected respectively with screened film (9,11), the bar thick stick amplifier section (31,33) of hydraulic pressure amplification module (7,9) is respectively It is connected with the arranged on left and right sides of screened film (5);Support section (32,34), the peripheral boundary of screened film (9,11) are amplified by hydraulic pressure Structure (6) surrounds, and the peripheral boundary of screened film (9,11) is in the external boundary of support section (32,34);Support section (32, 34) it is centrally located on the forward and backward center line of accelerometer overall structure (AB), and support section (32,34) is on accelerometer The left and right center line of overall structure (CD) is symmetrical;The peripheral boundary of screened film (9,11) is centrally located at accelerometer and integrally tied On the forward and backward center line of structure (AB), and the peripheral boundary of screened film (9,11) is on the left and right center line of accelerometer overall structure (CD) it is symmetrical;The center line of lever amplification part (31,33) is located at the forward and backward center line of accelerometer overall structure (AB) On, and lever amplification part (31,33) are symmetrical on the left and right center line of accelerometer overall structure (CD);Support section The top of (32,34) is visible, and the center line of support section (32,34) is located at the forward and backward center line of accelerometer overall structure (AB) On, and support section (32,34) is symmetrical on the left and right center line of accelerometer overall structure (CD).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710975734.5A CN107807255B (en) | 2017-10-19 | 2017-10-19 | Tunnel magnetic resistance type accelerometer device based on miniature hydraulic amplification |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710975734.5A CN107807255B (en) | 2017-10-19 | 2017-10-19 | Tunnel magnetic resistance type accelerometer device based on miniature hydraulic amplification |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107807255A true CN107807255A (en) | 2018-03-16 |
CN107807255B CN107807255B (en) | 2020-02-18 |
Family
ID=61585131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710975734.5A Active CN107807255B (en) | 2017-10-19 | 2017-10-19 | Tunnel magnetic resistance type accelerometer device based on miniature hydraulic amplification |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107807255B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109142784A (en) * | 2018-09-10 | 2019-01-04 | 东南大学 | A kind of differential mass block formula tunnel magnetoresistive accelerometer device based on lever mechanism |
CN110261640A (en) * | 2019-06-27 | 2019-09-20 | 东南大学 | A kind of micro- flow sensor of MEMS based on tunnel magneto-resistance effect |
CN110780088A (en) * | 2019-11-08 | 2020-02-11 | 中北大学 | Multi-bridge tunnel magnetic resistance double-shaft accelerometer |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06102005A (en) * | 1992-03-09 | 1994-04-12 | Res Dev Corp Of Japan | Microdevice for detecting tunnel current |
US7168318B2 (en) * | 2002-08-12 | 2007-01-30 | California Institute Of Technology | Isolated planar mesogyroscope |
CN102435775A (en) * | 2011-09-22 | 2012-05-02 | 重庆大学 | Strain type three-dimensional acceleration sensor |
CN106645797A (en) * | 2016-10-26 | 2017-05-10 | 东南大学 | TMR (Tunneling magnetoresistance) accelerometer based on gap change |
CN106771360A (en) * | 2016-11-22 | 2017-05-31 | 三峡大学 | A kind of single shaft mems accelerometer |
CN107255737A (en) * | 2017-05-18 | 2017-10-17 | 东南大学 | A kind of tunnel magnetoresistive formula accelerometer device and method changed based on magnetic direction |
-
2017
- 2017-10-19 CN CN201710975734.5A patent/CN107807255B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06102005A (en) * | 1992-03-09 | 1994-04-12 | Res Dev Corp Of Japan | Microdevice for detecting tunnel current |
US7168318B2 (en) * | 2002-08-12 | 2007-01-30 | California Institute Of Technology | Isolated planar mesogyroscope |
CN102435775A (en) * | 2011-09-22 | 2012-05-02 | 重庆大学 | Strain type three-dimensional acceleration sensor |
CN106645797A (en) * | 2016-10-26 | 2017-05-10 | 东南大学 | TMR (Tunneling magnetoresistance) accelerometer based on gap change |
CN106771360A (en) * | 2016-11-22 | 2017-05-31 | 三峡大学 | A kind of single shaft mems accelerometer |
CN107255737A (en) * | 2017-05-18 | 2017-10-17 | 东南大学 | A kind of tunnel magnetoresistive formula accelerometer device and method changed based on magnetic direction |
Non-Patent Citations (2)
Title |
---|
刘益芳 等: "微隧道式加速度计的最优控制", 《光学 精密工程》 * |
贺玲 等: "隧道式硅微加速度计的设计和制作", 《传感器技术》 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109142784A (en) * | 2018-09-10 | 2019-01-04 | 东南大学 | A kind of differential mass block formula tunnel magnetoresistive accelerometer device based on lever mechanism |
CN109142784B (en) * | 2018-09-10 | 2020-08-11 | 东南大学 | Differential mass block type tunnel magnetoresistive accelerometer device based on lever mechanism |
CN110261640A (en) * | 2019-06-27 | 2019-09-20 | 东南大学 | A kind of micro- flow sensor of MEMS based on tunnel magneto-resistance effect |
CN110261640B (en) * | 2019-06-27 | 2024-04-09 | 东南大学 | MEMS micro-flow velocity sensor based on tunnel magneto-resistance effect |
CN110780088A (en) * | 2019-11-08 | 2020-02-11 | 中北大学 | Multi-bridge tunnel magnetic resistance double-shaft accelerometer |
Also Published As
Publication number | Publication date |
---|---|
CN107807255B (en) | 2020-02-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103267955B (en) | Single-chip bridge-type magnetic field sensor | |
JP7188824B2 (en) | Magnetoresistive inertial sensor chip | |
CN106645797B (en) | Tunnel magnetoresistance effect accelerometer device based on gap change | |
US7705586B2 (en) | Magnetic sensor for input devices | |
CN103412269B (en) | Single-chip push-pull bridge type magnetic field sensor | |
US10024930B2 (en) | Single chip referenced bridge magnetic sensor for high-intensity magnetic field | |
CN107807255A (en) | A kind of tunnel magnetoresistive formula accelerometer device based on micro hydraulic amplification | |
CN102854339A (en) | Micro acceleration transducer based on silicon substrate giant magnetoresistance effect | |
CN202421483U (en) | Single-chip push-pull bridge-type magnetic field sensor | |
CN103901363A (en) | Single-chip Z-axis linear magneto-resistive sensor | |
CN107255737B (en) | Tunnel magnetoresistive accelerometer device and method based on magnetic field direction change | |
CN203587785U (en) | Single-chip push-pull bridge type magnetic field sensor | |
CN104567848B (en) | A kind of micromechanical gyro based on tunnel magneto-resistance effect | |
WO2017115839A1 (en) | Magnetic sensor, sensor unit, magnetic detection device, and magnetic measurement device | |
CN109142784B (en) | Differential mass block type tunnel magnetoresistive accelerometer device based on lever mechanism | |
JPWO2011089978A1 (en) | Magnetic sensor | |
CN109275080B (en) | Sensor | |
CN203480009U (en) | Single-chip Z-axis linear magneto-resistor sensor | |
CN202853817U (en) | MEMS tunnel magnetic resistance height pressure transducer | |
CN109142786A (en) | A kind of tunnel magnetoresistive based on torsional pendulum type structure declines accelerometer device | |
US20180321334A1 (en) | Tmr high-sensitivity single-chip push-pull bridge magnetic filed sensor | |
CN206132803U (en) | Tunnel magnetoresistive effect accelerometer device based on clearance changes | |
CN107131819A (en) | Single shaft micromechanics displacement transducer based on tunnel magneto-resistance effect | |
CN109142785A (en) | A kind of tunnel magnetoresistive accelerometer device of the trunnion axis sensitivity based on 3D printing | |
JP2014182096A (en) | Magnetic sensor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |