CN107255737B - Tunnel magnetoresistive accelerometer device and method based on magnetic field direction change - Google Patents
Tunnel magnetoresistive accelerometer device and method based on magnetic field direction change Download PDFInfo
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- CN107255737B CN107255737B CN201710353163.1A CN201710353163A CN107255737B CN 107255737 B CN107255737 B CN 107255737B CN 201710353163 A CN201710353163 A CN 201710353163A CN 107255737 B CN107255737 B CN 107255737B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
Abstract
The invention discloses a tunnel reluctance type accelerometer device based on magnetic field direction change and a measuring method thereof, which not only have small volume and easy processing, but also obviously improve the measuring sensitivity and precision. The device comprises a top layer structure, a bottom layer structure, an intermediate layer structure and four anchor points, wherein the four anchor points are arranged on four corners of the bottom layer structure and connected between the top layer structure and the bottom layer structure, and the intermediate layer structure is supported between the bottom layer structure and the top layer structure through the four anchor points. The invention can generate a magnetic field which is vertical to the tunnel magnetic resistance sensor, and the thickness of the excitation structure is larger, thus realizing stronger local magnetic field and further realizing the tunnel magnetic resistance effect with higher sensitivity; meanwhile, because the support beams of the four flexible rods are adopted to connect the mass block and the anchor point, the sensitivity and the measurement precision are obviously improved under the lever action; meanwhile, the accelerometer has simple structure, small volume and easy processing; has the advantages of controllable magnetic field intensity, adjustable sensitivity and the like.
Description
Technical Field
The invention belongs to the technical field of acceleration measurement, relates to a Micro Electro Mechanical System (MEMS) and a micro inertial device, and particularly relates to a tunnel magneto-resistive accelerometer device based on magnetic field direction change and a measurement method thereof.
Background
Quantum tunneling is a quantum property in which microscopic particles, such as electrons, can penetrate through "walls" through which they otherwise cannot pass. The tunnel magnetoresistance effect is a phenomenon in which, in a "tunnel junction" formed by a ferromagnetic thin film and an intermediate insulating layer, the possibility of electron tunneling through the insulating layer is correlated with the relative magnetization direction of the ferromagnetic layer, which is macroscopically expressed as the magnitude of resistance having extremely high resistance sensitivity to a change in the direction of a magnetic field. The tunnel magnetic resistance type acceleration mainly utilizes an input acceleration signal to cause the polarization of a magnetic field of two ferromagnetic thin films in a tunnel junction to change, so that the change of the tunnel magnetic resistance is used for measuring the magnitude of the input acceleration. The tunnel magnetoresistance effect is very sensitive to the magnetization direction of the magnetic field, namely the possibility that an electron tunnel penetrates through an insulating layer is very sensitive to the change of the magnetization direction of the magnetic field, so that high-precision acceleration detection can be realized, and the tunnel magnetoresistance effect becomes the key research field of a new generation of high-precision silicon micro-accelerometer.
At present, the tunnel magnetoresistive accelerometer device in the prior art generally has the problems of large volume, low measurement precision, low sensitivity and the like, and cannot meet the application requirements.
Disclosure of Invention
in order to solve the problems, the invention discloses a tunnel reluctance type accelerometer device based on magnetic field direction change and a measuring method thereof, which not only have small volume and easy processing, but also obviously improve the measuring sensitivity and precision.
In order to achieve the purpose, the invention provides the following technical scheme:
A tunnel magnetic resistance type accelerometer device based on magnetic field direction change comprises a top layer structure, a bottom layer structure, a middle layer structure and four anchor points, wherein the four anchor points are arranged on four corners of the bottom layer structure and connected between the top layer structure and the bottom layer structure, and the middle layer structure is supported between the bottom layer structure and the top layer structure through the four anchor points;
the middle layer structure comprises a mass block, a first sensitive feedback electrode, a second sensitive feedback electrode, a first distance control electrode and a second distance control electrode which are positioned on the back of the mass block, a third sensitive feedback electrode, a fourth sensitive feedback electrode, a third distance control electrode and a fourth distance control electrode which are positioned on the front of the mass block, a tunnel magnetic resistance excitation structure embedded in the mass block, two end electrodes respectively connected with the front and the back of the tunnel magnetic resistance excitation structure, a third insulating layer used for isolating the mass block from the tunnel magnetic resistance excitation structure and the two end electrodes thereof, a first flexible rod supporting beam, a second flexible rod supporting beam, a third flexible rod supporting beam and a fourth flexible rod supporting beam which are respectively connected with four corners of the mass block, wherein the first flexible rod supporting beam is also connected with a second anchor point, the second flexible rod supporting beam is also connected with a third anchor point, and the third flexible rod supporting beam is also connected with a fourth anchor point, the fourth flexible rod support beam is also connected with the first anchor point;
The bottom layer structure comprises a first substrate, a first insulating layer arranged on the front surface of the first substrate, a first tunnel magnetoresistive sensor, a second tunnel magnetoresistive sensor, a fifth sensitive feedback electrode, a sixth sensitive feedback electrode, a fifth spacing control electrode and a sixth spacing control electrode, wherein the first tunnel magnetoresistive sensor, the second tunnel magnetoresistive sensor, the fifth sensitive feedback electrode, the sixth sensitive feedback electrode, the fifth spacing control electrode and the sixth spacing control electrode are arranged on the front surface of the first insulating layer;
The top layer structure comprises a second substrate, a second insulating layer arranged on the back of the second substrate, a third tunnel magnetoresistive sensor, a fourth tunnel magnetoresistive sensor, a seventh sensitive feedback electrode, an eighth sensitive feedback electrode, a seventh spacing control electrode and an eighth spacing control electrode which are arranged on the back of the second insulating layer.
Furthermore, each flexible rod supporting beam is L-shaped, one end of each flexible rod supporting beam is connected with the mass block, and the other end of each flexible rod supporting beam is connected with the anchor point.
Further, the tunnel magnetic resistance excitation structure comprises a plurality of cylindrical structural bodies distributed in the mass block.
Furthermore, the first sensitive feedback electrode, the second sensitive feedback electrode, the first spacing control electrode and the second spacing control electrode are respectively positioned at the right side, the left side, the front side and the rear side of the tunnel magnetic resistance excitation structure; the third sensitive feedback electrode, the fourth sensitive feedback electrode, the third distance control electrode and the fourth distance control electrode are respectively positioned at the right side, the left side, the front side and the rear side of the tunnel magnetic resistance excitation structure.
Furthermore, in the bottom layer structure, a first tunnel magnetoresistive sensor and a second tunnel magnetoresistive sensor are positioned on two sides of the middle part of the first insulating layer and are symmetrically distributed along the AB center line, the two tunnel magnetoresistive sensors are positioned under the tunnel magnetoresistive excitation structure, a fifth sensitive feedback electrode is positioned between the first tunnel magnetoresistive sensor and the first anchor point as well as the second anchor point, and a sixth sensitive feedback electrode is positioned between the second tunnel magnetoresistive sensor and the third anchor point as well as the fourth anchor point; the fifth spacing control electrode is positioned between the two tunnel magnetoresistive sensors and the second anchor point and the third anchor point, and the sixth spacing control electrode is positioned between the two tunnel magnetoresistive sensors and the first anchor point and the fourth anchor point; the fifth sensitive feedback electrode and the sixth sensitive feedback electrode are positioned right below the first sensitive feedback electrode and the second sensitive feedback electrode, and the fifth interval control electrode and the sixth interval control electrode are positioned right below the first interval control electrode and the second interval control electrode.
Furthermore, the fifth sensitive feedback electrode and the sixth sensitive feedback electrode are positioned on the transverse central line and are positioned at two sides of the two tunnel magnetoresistive sensors; the fifth spacing control electrode and the sixth spacing control electrode are positioned on the longitudinal central line and are positioned at two sides of the two tunnel magnetoresistive sensors; the fifth and sixth spacing control electrodes and the first and second spacing control electrodes form a differential torque device to realize spacing control between the middle layer and the bottom layer; the fifth and sixth sensitive feedback electrodes and the first and second sensitive feedback electrodes form two groups of differential control pins, and a closed loop is formed between a local magnetic field and a detection signal of the tunnel magnetoresistive sensor.
Furthermore, the first tunnel magnetoresistive sensor and the second tunnel magnetoresistive sensor have the same structure and are formed by connecting rectangular blocks in series in a snake-shaped structure, and the first tunnel magnetoresistive sensor is sequentially provided with a top layer, a free layer, a tunnel barrier layer, a ferromagnetic layer, an antiferromagnetic layer and a bottom layer from top to bottom; the ferromagnetic layer magnetic field direction is preset by the antiferromagnetic layer, the free layer magnetic field direction is determined by the magnetic field generated by the external tunnel magnetoresistive excitation structure, and the magnetic field generated by the tunnel magnetoresistive excitation structure is determined by the applied current.
Furthermore, the two ends of the first tunnel magnetoresistive sensor, the two ends of the second tunnel magnetoresistive sensor, the fifth sensitive feedback electrode, the sixth sensitive feedback electrode, the fifth spacing control electrode, the sixth spacing control electrode and the four anchor points are all led out through electrode leads.
Furthermore, a third tunnel magnetoresistive sensor and a fourth tunnel magnetoresistive sensor in the top layer structure are located in the middle of the second insulating layer and are located right above the tunnel magnetoresistive excitation structure; the seventh sensitive feedback electrode is positioned between the third tunnel magnetoresistive sensor and the first anchor point and the second anchor point, and the eighth sensitive feedback electrode is positioned between the fourth tunnel magnetoresistive sensor and the third anchor point and the fourth anchor point; the seventh spacing control electrode is positioned between the third tunnel magnetoresistive sensor, the fourth tunnel magnetoresistive sensor and the second anchor point as well as the third anchor point, and the eighth spacing control electrode is positioned between the third tunnel magnetoresistive sensor, the fourth tunnel magnetoresistive sensor and the first anchor point as well as the fourth anchor point; and the seventh sensitive feedback electrode and the eighth sensitive feedback electrode are positioned right above the third sensitive feedback electrode and the fourth sensitive feedback electrode, and the seventh interval control electrode and the eighth interval control electrode are positioned right above the third interval control electrode and the fourth interval control electrode.
The measuring method of the tunnel reluctance type accelerometer device based on the change of the magnetic field direction comprises the following steps: applying voltage to two end electrodes of the tunnel magnetic resistance excitation structure so as to form current in the tunnel magnetic resistance excitation structure to generate a local magnetic field; when an acceleration signal is input along the direction from the top layer to the bottom layer, the mass block moves downwards, so that the distances between the tunnel magnetic resistance excitation structure and the first tunnel magnetic resistance sensor and the second tunnel magnetic resistance sensor become smaller, and the distances between the tunnel magnetic resistance excitation structure and the third tunnel magnetic resistance sensor and the fourth tunnel magnetic resistance sensor become larger, and the magnetic fields around the first tunnel magnetic resistance sensor, the second tunnel magnetic resistance sensor, the third tunnel magnetic resistance sensor and the fourth tunnel magnetic resistance sensor are changed; the external input acceleration is measured by measuring the resistances of the first, second, third and fourth tunnel magnetoresistive sensors.
Compared with the prior art, the invention has the following beneficial effects:
1. Compared with a tunnel magnetic resistance sensor in which the direction of a magnetic field in a tunnel accelerometer is parallel to the direction of the tunnel magnetic resistance sensor based on gap change and an excitation structure is realized by adopting a magnetic film, the tunnel accelerometer based on the change of the direction of the magnetic field generates a magnetic field which is perpendicular to the tunnel magnetic resistance sensor, and the thickness of the excitation structure is larger, so that a stronger local magnetic field can be realized, and a tunnel magnetic resistance effect with higher sensitivity is realized; meanwhile, because the support beams of the four flexible rods are adopted to connect the mass block and the anchor point, the sensitivity and the measurement precision are obviously improved under the lever action; meanwhile, the accelerometer has a simple structure and a small volume.
2. The tunnel structure is utilized to generate a local magnetic field, so that the tunnel structure has the advantages of controllable magnetic field intensity, adjustable sensitivity and the like, and the defects of permanent magnet magnetic field attenuation, uncontrollable magnetic field intensity and the like are avoided.
3. The invention realizes the tunnel magnetoresistance effect by changing the direction of the magnetic field, does not need to realize the nm-stage gap control of the gap between the two ferromagnetic interlayer insulating layers, and is easier to process and realize the function of the device.
Drawings
Fig. 1(a) is a schematic view of an overall structure of a tunneling magnetoresistive accelerometer device based on a magnetic field direction change, where a left half portion of an AB centerline is a schematic view seen from a third anchor point direction to a fourth anchor point direction (i.e., downward in fig. 3), and a right half portion of the AB centerline is a schematic view seen from a first anchor point direction to a second anchor point direction (i.e., upward in fig. 3).
Fig. 1(b) is another overall structural diagram of the tunneling magnetoresistive accelerometer device based on the magnetic field direction change, in which the left half of the CD centerline is viewed from the third anchor point direction to the second anchor point direction (i.e., to the right in fig. 3), and the right half of the CD centerline is viewed from the first anchor point direction to the fourth anchor point direction (i.e., to the left in fig. 3).
Figure 2 is a bottom view of the top and middle layer structures.
Fig. 3 is a top view of the substructure.
Fig. 4 is a schematic diagram of a tunnel magnetoresistive sensor structure.
Fig. 5 is an underlying structure wiring diagram.
figure 6 is a bottom view of the top layer structure.
Detailed Description
The technical solutions provided by the present invention will be described in detail below with reference to specific examples, and it should be understood that the following specific embodiments are only illustrative of the present invention and are not intended to limit the scope of the present invention.
As shown in fig. 1, a tunnel magnetoresistive accelerometer device based on magnetic field direction changes, including top layer structure, bottom layer structure, intermediate level structure and first anchor point 3, second anchor point 4, third anchor point 5, fourth anchor point 6, four anchor points set up on bottom layer structure four corners, and be connected between top layer structure and bottom layer structure, and intermediate level structure supports between bottom layer structure and top layer structure through four anchor points, top layer structure and bottom layer structure distribute for the upper and lower symmetry in intermediate level, each component and distribution are unanimous.
As shown in fig. 1 and fig. 2, the intermediate layer structure includes a mass 17, a first sensitive feedback electrode 18, a second sensitive feedback electrode 20, a third sensitive feedback electrode 34, a fourth sensitive feedback electrode 36, a first spacing control electrode 19, a second spacing control electrode 21, a third spacing control electrode 35, a fourth spacing control electrode 37, a tunnel reluctance excitation structure 23, and two end electrodes of the tunnel reluctance excitation structure, specifically including a back electrode 24, a front electrode 33, a first flexible rod support beam 13, a second flexible rod support beam 14, a third flexible rod support beam 15, and a fourth flexible rod support beam 16. The underlying structure comprises a first tunnel magnetoresistive sensor 11, a second tunnel magnetoresistive sensor 12, a fifth sensitive feedback electrode 7, a sixth sensitive feedback electrode 9, a fifth pitch control electrode 8, a sixth pitch control electrode 10, a first insulating layer 2 and a first substrate 1. The top layer structure is the same as the bottom layer structure and comprises a third tunnel magnetoresistive sensor 27, a fourth tunnel magnetoresistive sensor 28, a seventh sensitive feedback electrode 29, an eighth sensitive feedback electrode 31, a seventh pitch control electrode 30, an eighth pitch control electrode 32, a second insulating layer 26 and a second substrate 25.
Specifically, the intermediate layer structure supports the mass between four anchor points via a first flexible rod support beam 13, a second flexible rod support beam 14, a third flexible rod support beam 15, and a fourth flexible rod support beam 16; as shown in fig. 2, an L-shaped flexible rod support beam is connected to each of four corners of the mass block 17, and the flexible rod support beam includes a short rod and a long rod which are vertically connected to each other, one corner of the mass block 17 is connected to the short rod, and the long rod is connected to an anchor point corresponding to the other corner of the mass block which is on the same side as the connection corner of the short rod. The L-shaped flexible rod supporting beam has a long lever effect, can amplify displacement, is convenient to improve measurement precision and reduces operation difficulty. The tunnel magnetic resistance excitation structure 23 is embedded in the mass block 17 and separated from the mass block 17 by a third insulating layer 22, as shown in fig. 2, the tunnel magnetic resistance excitation structure 23 includes a plurality of cylindrical structural bodies which are distributed in the mass block 17 in a symmetrical etching manner and can form symmetrically distributed magnetic fields at two sides of the central position, and two ends of the tunnel magnetic resistance excitation structure 23 are connected with two end electrodes of the tunnel magnetic resistance excitation structure; the two terminal electrodes of the tunnel magnetic resistance excitation structure realize the connection of the tunnel magnetic resistance excitation structure 23 distributed in the mass block, and the third insulating layer 22 is used for isolating the mass block 17 from the tunnel magnetic resistance excitation structure 23 and the two terminal electrodes thereof. Voltage is applied to two end electrodes of the tunnel magnetic resistance excitation structure, and a local magnetic field 63 is generated in the tunnel magnetic resistance excitation structure 23 due to the existence of current, so that a magnetic field condition is provided for the tunnel magnetic resistance accelerometer. The first sensitive feedback electrode 18, the second sensitive feedback electrode 20, the first spacing control electrode 19 and the second spacing control electrode 21 are positioned on the back surface of the mass block 17, and as seen from the direction of the drawing in fig. 2, the first sensitive feedback electrode, the second sensitive feedback electrode, the first spacing control electrode 19 and the second spacing control electrode are respectively positioned at the right side, the left side, the front side and the rear side of the tunnel magnetoresistive excitation structure 23, and are beneficial to lead wires of the electrodes; the third sensitive feedback electrode 34, the fourth sensitive feedback electrode 36, the third distance control electrode 35 and the fourth distance control electrode 37 are positioned on the front surface of the mass block, and are respectively positioned at the right side, the left side, the front side and the rear side of the tunnel magnetoresistive excitation structure 23 in the view direction of fig. 2, so that the lead wires of the electrodes are facilitated.
In the bottom layer structure, a first insulating layer 2 and the lower ends of four anchor points are arranged on the front surface of a first substrate 1, and the lower ends of a first anchor point 3, a second anchor point 4, a third anchor point 5 and a fourth anchor point 6 are respectively positioned at four top left, bottom left, top right and bottom right vertices of the first insulating layer 2 on the front surface of the first substrate 1; the front surface of the first insulating layer 2 is provided with a fifth sensitive feedback electrode 7, a sixth sensitive feedback electrode 9, a fifth spacing control electrode 8, a sixth spacing control electrode 10, a first tunnel magnetoresistive sensor 11 and a second tunnel magnetoresistive sensor 12. The first tunnel magnetoresistive sensor 11 and the second tunnel magnetoresistive sensor 12 are located on two sides of the middle of the first insulating layer 2 and symmetrically distributed along an AB center line in fig. 3, as shown in fig. 1, the two tunnel magnetoresistive sensors are located right below the tunnel magnetoresistive excitation structure 23, so that the variation of the induced magnetic field with the maximum effect can be realized, and the optimization of the sensitivity can be realized. It should be noted that the distances between the two tunnel magnetoresistive sensors in fig. 1(a) and fig. 3 do not correspond to each other, and do not limit the scope of the present patent, since the distance between the first tunnel magnetoresistive sensor 11 and the second tunnel magnetoresistive sensor 12 can be adjusted as required. As shown in fig. 3, the fifth sensitive feedback electrode 7 is located between the first tunnel magnetoresistive sensor 11 and the first and second anchor points 3 and 4, and the sixth sensitive feedback electrode 9 is located between the second tunnel magnetoresistive sensor 12 and the third and fourth anchor points 5 and 6; a fifth distance control electrode 8 is positioned between the two tunnel magnetoresistive sensors and the second anchor point 4 and the third anchor point 5, and a sixth distance control electrode 10 is positioned between the two tunnel magnetoresistive sensors and the first anchor point 3 and the fourth anchor point 6; and as can be seen from fig. 1(a), the fifth and sixth sensitive feedback electrodes 7 and 9 are located right below the first and second sensitive feedback electrodes 18 and 20, and the fifth and sixth gap control electrodes 8 and 10 are located right below the first and second gap control electrodes 19 and 21.
Fig. 3 is a bottom plan view, wherein the first tunnel magnetoresistive sensor 11 and the second tunnel magnetoresistive sensor 12 are formed by rectangular blocks connected in series in a "snake-like" structure, and are located on a connecting line CD of midpoints of the first anchor point 3, the second anchor point 4, the third anchor point 5 and the fourth anchor point 6, and they are located on two sides of a connecting line AB of midpoints of the first anchor point 3, the fourth anchor point 6, the second anchor point 4 and the third anchor point 5. As shown in fig. 4, the first tunnel magnetoresistive sensor 11 is provided with a top layer 55, a free layer 56, a tunnel barrier layer 57, a ferromagnetic layer 58, an antiferromagnetic layer 59, and a bottom layer 60 in this order from top to bottom; the magnetic field direction of the ferromagnetic layer 58 is predetermined by the antiferromagnetic layer 59, the magnetic field direction of the free layer 52 is determined by the magnetic field generated by the external tunnel magnetoresistive excitation structure 23, and the magnetic field generated by the tunnel magnetoresistive excitation structure 23 is determined by the applied current.
the rectangular fifth sensitive feedback electrode 7 and the rectangular sixth sensitive feedback electrode 9 are positioned on the CD line and are arranged at two sides of the two tunnel magnetoresistive sensors; the rectangular fifth spacing control electrode 8 and the rectangular sixth spacing control electrode 10 are positioned on the AB line and are arranged on two sides of the two tunnel magnetoresistive sensors; the fifth and sixth spacing control electrodes and the first and second spacing control electrodes form a differential torque device to realize spacing control between the middle layer and the bottom layer; the fifth and sixth sensitive feedback electrodes and the first and second sensitive feedback electrodes form two groups of differential control pins, and a closed loop is formed between a local magnetic field and a detection signal of the tunnel magnetoresistive sensor.
As shown in fig. 5, from the electrode lead diagram of the underlying structure, the first end 47 and the second end 48 of the first tunnel magnetoresistive sensor 11 are led out through the first electrode lead 51 and the second electrode lead 52; the third end 49 and the fourth end 50 of the second tunnel magnetoresistive sensor 12 are led out through a third electrode lead 53 and a fourth electrode lead 54; the fifth sensitive feedback electrode 7 and the sixth sensitive feedback electrode 9 are led out through a fifth electrode lead 46 and a sixth electrode lead 44, and the fifth interval control electrode 8 and the sixth interval control electrode 10 are led out through a seventh electrode lead 43 and an eighth electrode lead 45; the four anchor points are respectively led out through a ninth electrode lead 41, a tenth electrode lead 42, an eleventh electrode lead 39 and a twelfth electrode lead 40.
As shown in fig. 6, the top layer structure arranges a second insulating layer 26 and the upper ends of four anchors on the back of the second substrate 25, and the upper ends of the first anchor 3, the second anchor 4, the third anchor 5, and the fourth anchor 6 are located at four upper left, lower left, upper right, and lower right vertices of the second insulating layer 26 on the back of the second substrate 25. On the back side of the second insulating layer 26, a seventh sensitive feedback electrode 29, an eighth sensitive feedback electrode 31, a seventh pitch control electrode 30, an eighth pitch control electrode 32, a third tunnel magnetoresistive sensor 27, and a fourth tunnel magnetoresistive sensor 28 are arranged. A third tunnel magnetoresistive sensor 27 and a fourth tunnel magnetoresistive sensor 28 are located in the middle of the second insulating layer 26 and directly above the tunnel magnetoresistive excitation structure 23; a seventh sensitive feedback electrode 29 is located between the third tunnel magnetoresistive sensor 27 and the first anchor point 3, the second anchor point 4, and an eighth sensitive feedback electrode 31 is located between the fourth tunnel magnetoresistive sensor 28 and the third anchor point 5, the fourth anchor point 6; seventh spaced control electrodes 30 are located between third tunnel magnetoresistive sensor 27, fourth tunnel magnetoresistive sensor 28 and second anchor point 4, third anchor point 5, and eighth spaced control electrodes 32 are located between third tunnel magnetoresistive sensor 27, fourth tunnel magnetoresistive sensor 28 and first anchor point 3, fourth anchor point 6; the seventh sensitive feedback electrode 29 and the eighth sensitive feedback electrode 31 are located right above the third sensitive feedback electrode 34 and the fourth sensitive feedback electrode 36, and the seventh spacing control electrode 30 and the eighth spacing control electrode 32 are located right above the third spacing control electrode 35 and the fourth spacing control electrode 37.
The measuring method of the tunnel reluctance type accelerometer device based on the change of the magnetic field direction comprises the following steps:
voltage is applied to two end electrodes of the tunnel magnetic resistance excitation structure, so that current is formed in the tunnel magnetic resistance excitation structure 23 to generate a local magnetic field 63, when an acceleration signal is input along the direction 38, the mass block 17 displaces downwards, so that the distances between the tunnel magnetic resistance excitation structure 23 and the first tunnel magnetic resistance sensor 11 and the second tunnel magnetic resistance sensor 12 become smaller, and the distances between the tunnel magnetic resistance excitation structure 23 and the third tunnel magnetic resistance sensor 27 and the fourth tunnel magnetic resistance sensor 28 become larger, so that the magnetic fields around the first tunnel magnetic resistance sensor, the second tunnel magnetic resistance sensor, the third tunnel magnetic resistance sensor and the fourth tunnel magnetic resistance sensor are changed, and the measurement of external input acceleration is realized through the measurement of the resistances of the first tunnel magnetic resistance sensor, the second.
The technical means disclosed in the invention scheme are not limited to the technical means disclosed in the above embodiments, but also include the technical scheme formed by any combination of the above technical features. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principle of the present invention, and such improvements and modifications are also considered to be within the scope of the present invention.
Claims (10)
1. A kind of tunnel magnetic resistance type accelerometer device based on the change of the magnetic field direction, characterized by that: the anchor point fixing device comprises a top layer structure, a bottom layer structure, a middle layer structure and four anchor points, wherein the four anchor points are arranged on four corners of the bottom layer structure and connected between the top layer structure and the bottom layer structure, and the middle layer structure is supported between the bottom layer structure and the top layer structure through the four anchor points;
The middle layer structure comprises a mass block (17), a first sensitive feedback electrode (18), a second sensitive feedback electrode (20), a first distance control electrode (19) and a second distance control electrode (21) which are positioned on the back surface of the mass block (17), a third sensitive feedback electrode (34), a fourth sensitive feedback electrode (36), a third distance control electrode (35) and a fourth distance control electrode (37) which are positioned on the front surface of the mass block, a tunnel magnetic resistance excitation structure (23) embedded in the mass block (17), two end electrodes which are respectively connected to the front surface and the back surface of the tunnel magnetic resistance excitation structure (23), a third insulating layer (22) which is used for isolating the mass block (17) from the tunnel magnetic resistance excitation structure (23) and the two end electrodes thereof, a first flexible rod supporting beam (13), a second flexible rod supporting beam (14) which are respectively connected with four corners of the mass block (17), and a first flexible rod, A third flexible rod support beam (15), a fourth flexible rod support beam (16), the first flexible rod support beam (13) further connected with a second anchor point (4), the second flexible rod support beam (14) further connected with a third anchor point (5), the third flexible rod support beam (15) further connected with a fourth anchor point (6), the fourth flexible rod support beam (16) further connected with the first anchor point (3);
The bottom layer structure comprises a first substrate (1), a first insulating layer (2) arranged on the front surface of the first substrate (1), a first tunnel magnetoresistive sensor (11), a second tunnel magnetoresistive sensor (12), a fifth sensitive feedback electrode (7), a sixth sensitive feedback electrode (9), a fifth spacing control electrode (8) and a sixth spacing control electrode (10) which are arranged on the front surface of the first insulating layer (2);
The top layer structure comprises a second substrate (25), a second insulating layer (26) arranged on the back of the second substrate, a third tunnel magnetoresistive sensor (27), a fourth tunnel magnetoresistive sensor (28), a seventh sensitive feedback electrode (29), an eighth sensitive feedback electrode (31), a seventh spacing control electrode (30) and an eighth spacing control electrode (32) which are arranged on the back of the second insulating layer.
2. The tunneling magnetoresistive accelerometer device of claim 1, wherein: each flexible rod supporting beam is L-shaped, one end of each flexible rod supporting beam is connected with the mass block, and the other end of each flexible rod supporting beam is connected with the anchor point.
3. the tunneling magneto-resistive accelerometer device based on magnetic field direction change of claim 2, wherein: the tunnel magnetic resistance excitation structure (23) comprises a plurality of cylindrical structural bodies distributed in the mass block.
4. A tunneling magneto-resistive accelerometer device based on magnetic field direction change according to claim 3, wherein: the first sensitive feedback electrode (18), the second sensitive feedback electrode (20), the first distance control electrode (19) and the second distance control electrode (21) are respectively positioned at the right side, the left side, the front side and the rear side of the tunnel reluctance excitation structure (23); the third sensitive feedback electrode (34), the fourth sensitive feedback electrode (36), the third distance control electrode (35) and the fourth distance control electrode (37) are respectively positioned on the right, the left, the front and the rear of the tunnel reluctance excitation structure (23).
5. The tunneling magnetoresistive accelerometer device of claim 1, wherein: in the bottom layer structure, a first tunnel magnetoresistive sensor (11) and a second tunnel magnetoresistive sensor (12) are positioned on two sides of the middle part of a first insulating layer (2) and are symmetrically distributed along the longitudinal center line of an accelerometer device, the first tunnel magnetoresistive sensor and the second tunnel magnetoresistive sensor are positioned under a tunnel magnetoresistive excitation structure (23), a fifth sensitive feedback electrode (7) is positioned between the first tunnel magnetoresistive sensor (11) and a first anchor point (3) and a second anchor point (4), and a sixth sensitive feedback electrode (9) is positioned between the second tunnel magnetoresistive sensor (12) and a third anchor point (5) and a fourth anchor point (6); a fifth distance control electrode (8) is positioned between the first tunnel magnetoresistive sensor and the second anchor point (4) and between the second tunnel magnetoresistive sensor and the third anchor point (5), and a sixth distance control electrode (10) is positioned between the first tunnel magnetoresistive sensor and the second tunnel magnetoresistive sensor and between the first anchor point (3) and the fourth anchor point (6); the fifth sensitive feedback electrode (7) and the sixth sensitive feedback electrode (9) are positioned right below the first sensitive feedback electrode (18) and the second sensitive feedback electrode (20), and the fifth distance control electrode (8) and the sixth distance control electrode (10) are positioned right below the first distance control electrode (19) and the second distance control electrode (21).
6. the tunneling magneto-resistive accelerometer device based on magnetic field direction change of claim 5, wherein: the fifth sensitive feedback electrode (7) and the sixth sensitive feedback electrode (9) are positioned on the transverse central line and are arranged at two sides of the first tunnel magnetoresistive sensor and the second tunnel magnetoresistive sensor; the fifth spacing control electrode (8) and the sixth spacing control electrode (10) are positioned on the longitudinal central line and are arranged at two sides of the first tunnel magnetoresistive sensor and the second tunnel magnetoresistive sensor; the fifth and sixth spacing control electrodes and the first and second spacing control electrodes form a differential torque device to realize spacing control between the middle layer and the bottom layer; the fifth and sixth sensitive feedback electrodes and the first and second sensitive feedback electrodes form two groups of differential control pins, and a closed loop is formed between a local magnetic field and a detection signal of the tunnel magnetoresistive sensor.
7. The tunneling magneto-resistive accelerometer device based on magnetic field direction change of claim 6, wherein: the first tunnel magnetoresistive sensor (11) and the second tunnel magnetoresistive sensor (12) are identical in structure and are formed by connecting rectangular blocks in series in a snake-shaped structure, and the first tunnel magnetoresistive sensor (11) is sequentially provided with a top layer (55), a free layer (56), a tunnel barrier layer (57), a ferromagnetic layer (58), an antiferromagnetic layer (59) and a bottom layer (60) from top to bottom; the magnetic field direction of the ferromagnetic layer (58) is preset by the antiferromagnetic layer (59), the magnetic field direction of the free layer (56) is determined by the magnetic field generated by the external tunnel magnetoresistive excitation structure (23), and the magnetic field generated by the tunnel magnetoresistive excitation structure (23) is determined by the applied current.
8. The tunneling magneto-resistive accelerometer device based on magnetic field direction change of claim 7, wherein: the two ends of the first tunnel magnetoresistive sensor (11), the two ends of the second tunnel magnetoresistive sensor (12), the fifth sensitive feedback electrode (7), the sixth sensitive feedback electrode (9), the fifth distance control electrode (8), the sixth distance control electrode (10) and the four anchor points are all led out through electrode leads.
9. The tunneling magnetoresistive accelerometer device of claim 1, wherein: a third tunnel magnetoresistive sensor (27) and a fourth tunnel magnetoresistive sensor (28) in the top layer structure are positioned in the middle of the second insulating layer (26) and are positioned right above the tunnel magnetoresistive exciting structure (23); a seventh sensitive feedback electrode (29) is positioned between the third tunnel magnetoresistive sensor (27) and the first anchor point (3) and the second anchor point (4), and an eighth sensitive feedback electrode (31) is positioned between the fourth tunnel magnetoresistive sensor (28) and the third anchor point (5) and the fourth anchor point (6); a seventh spacing control electrode (30) is positioned between the third tunnel magnetoresistive sensor (27), the fourth tunnel magnetoresistive sensor (28) and the second anchor point (4), the third anchor point (5), and an eighth spacing control electrode (32) is positioned between the third tunnel magnetoresistive sensor (27), the fourth tunnel magnetoresistive sensor (28) and the first anchor point (3), the fourth anchor point (6); and the seventh sensitive feedback electrode (29) and the eighth sensitive feedback electrode (31) are positioned right above the third sensitive feedback electrode (34) and the fourth sensitive feedback electrode (36), and the seventh spacing control electrode (30) and the eighth spacing control electrode (32) are positioned right above the third spacing control electrode (35) and the fourth spacing control electrode (37).
10. The measurement method of the tunnel magnetoresistive accelerometer device based on the magnetic field direction change is realized based on the tunnel magnetoresistive accelerometer device based on the magnetic field direction change according to any one of claims 1 to 9, and comprises the following steps: applying voltage to two end electrodes of the tunnel magnetic resistance excitation structure so as to form current in the tunnel magnetic resistance excitation structure to generate a local magnetic field; when an acceleration signal is input along the direction from the top layer to the bottom layer, the mass block moves downwards, so that the distances between the tunnel magnetic resistance excitation structure and the first tunnel magnetic resistance sensor and the second tunnel magnetic resistance sensor become smaller, and the distances between the tunnel magnetic resistance excitation structure and the third tunnel magnetic resistance sensor and the fourth tunnel magnetic resistance sensor become larger, and the magnetic fields around the first tunnel magnetic resistance sensor, the second tunnel magnetic resistance sensor, the third tunnel magnetic resistance sensor and the fourth tunnel magnetic resistance sensor are changed; the external input acceleration is measured by measuring the resistances of the first, second, third and fourth tunnel magnetoresistive sensors.
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