CN110780088A - Multi-bridge tunnel magnetic resistance double-shaft accelerometer - Google Patents

Multi-bridge tunnel magnetic resistance double-shaft accelerometer Download PDF

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CN110780088A
CN110780088A CN201911088785.1A CN201911088785A CN110780088A CN 110780088 A CN110780088 A CN 110780088A CN 201911088785 A CN201911088785 A CN 201911088785A CN 110780088 A CN110780088 A CN 110780088A
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axis
tunnel magnetoresistive
coil
mass block
magnetoresistive element
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CN110780088B (en
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张瑞
李孟委
宫美梅
金丽
辛晨光
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North University of China
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North University of China
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/105Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by magnetically sensitive devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0894Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by non-contact electron transfer, i.e. electron tunneling

Abstract

The invention relates to a multi-bridge tunnel magnetic resistance double-shaft accelerometer which comprises a first supporting frame, a second supporting frame, an X-axis mass block, a Y-axis mass block, an X-axis tunnel magnetic resistance element, a Y-axis tunnel magnetic resistance element, an X-axis inflection coil and a Y-axis inflection coil, wherein the X-axis mass block is fixedly provided with the X-axis inflection coil and the Y-axis inflection coil which are mutually orthogonal; two ends of the X-axis folding coil and two ends of the Y-axis folding coil are respectively connected with corresponding electrodes on the first supporting frame through leads; an X-axis tunnel magnetoresistive element and a Y-axis tunnel magnetoresistive element are fixedly arranged on the second supporting frame; the X-axis tunnel magnetoresistive element is positioned right above the X-axis inflection coil; the Y-axis tunnel magnetic resistance element is positioned right above the Y-axis inflection coil, and a multi-bridge structure is arranged inside the tunnel magnetic resistance element. The double-shaft MEMS accelerometer based on the multi-bridge tunnel magnetic resistance greatly improves the ultimate detection capability and the detection sensitivity of the accelerometer.

Description

Multi-bridge tunnel magnetic resistance double-shaft accelerometer
Technical Field
The invention relates to the technical field of micro-electromechanical systems and micro-inertial devices, in particular to a multi-bridge tunnel magneto-resistance dual-axis accelerometer.
Background
The detection modes of the MEMS accelerometer are a piezoresistive type, a piezoelectric type, a capacitance type, a resonant tunneling type, an electron tunneling type and the like. The capacitance detection gyroscope is a mainstream detection mode at present, has the advantages of high precision, good stability and suitability for batch processing and easy integration, but because the comb teeth are more and the space is smaller, the comb teeth are easy to attract under external acting force to cause device failure. Although the noise level and the detection precision of the capacitive gyroscope are improved all the time, the detection resolution is limited by the resolution of an interface circuit, parasitic capacitance and a process processing technology, the detection resolution reaches the limit, and the noise level is difficult to break through 0.1 degree/h; the inherent temperature of the micro-accelerometer for detecting the piezoresistive effect limits the application of the micro-accelerometer, and the sensitivity of the micro-accelerometer is difficult to improve; the sensitivity of the piezoelectric effect detection is easy to drift, needs to be corrected frequently, is slow to return to zero, and is not suitable for continuous testing; the detection sensitivity of the resonant tunneling effect is one order of magnitude higher than that of the silicon piezoresistive effect, but the detection sensitivity obtained by the test is low, and the problem exists that the voltage of the paper cheating is easy to drift due to the driving of the accelerometer, so that the accelerometer cannot work stably; the electron tunnel effect detection manufacturing process is extremely complex, the detection circuit is relatively difficult to realize, the yield is low, and the normal work is difficult.
In 2008, harbin industrial university discloses a dual-axis accelerometer with a comb-shaped electrode structure, in a comb capacitive accelerometer, each movable comb tooth is perpendicular to the edge of a mass block and is placed in parallel along a sensitive direction, and fixed comb teeth are distributed on two sides of the movable comb tooth at equal intervals to form a capacitance differential pair, but the structure requires that each fixed comb tooth is independently bonded with a substrate, so that the difficulty of the process is greatly increased, and the improvement of the yield is not facilitated. In 2015, the tin-free technical profession institute proposed an integrated CMOS two-axis accelerometer, which contains 8 springs. The spring needs to be designed to ensure that the elastic constant in the Z direction is larger than that in the XOY plane, and the elastic constants in the X and Y directions cannot be too small to avoid increasing the thermal noise of the system. The accelerometer has large test limitation and is not beneficial to improving the test precision. In 2016, southeast university proposes a gap-change-based tunneling magnetoresistive accelerometer, which uses four gap adjustment electrodes to form two differential capacitive torquers, and can detect uniaxial acceleration at a high level. At present, detection equipment for detecting the biaxial acceleration is not perfect enough, and the limit detection capability and the detection sensitivity of the used accelerometer are not high.
Disclosure of Invention
The invention aims to provide a multi-bridge tunnel magneto-resistance dual-axis accelerometer.
In order to achieve the purpose, the invention provides the following technical scheme: the multi-bridge tunnel magnetic resistance double-shaft accelerometer comprises a first support frame and a second support frame which are fixedly connected;
an X-axis mass block and a Y-axis mass block are arranged on the first supporting frame; the Y-axis mass block is connected with the first support frame through a plurality of Y-axis detection beams with elastic deformation capacity; the X-axis mass block is connected with the Y-axis mass block through a plurality of X-axis detection beams with elastic deformation capacity;
an X-axis retracing coil and a Y-axis retracing coil which are mutually orthogonal are fixedly arranged on the X-axis mass block; two ends of the X-axis folding coil and two ends of the Y-axis folding coil are respectively connected with corresponding electrodes on the first supporting frame through leads;
an X-axis tunnel magnetoresistive element and a Y-axis tunnel magnetoresistive element are fixedly arranged on the second supporting frame; the X-axis tunnel magnetoresistive element is positioned right above the X-axis inflection coil; the Y-axis tunnel magnetoresistive element is positioned right above the Y-axis inflection coil;
the internal multi-bridge structure of the X-axis tunnel magnetoresistive element comprises a magnetic resistance R 1、R 2、R 3、R 4;R 1、R 3Is a positive correlated magnetoresistive junction; r 2、R 4Is a negative correlated magneto-resistive junction;
the inner multi-bridge structure of the Y-axis tunnel magnetoresistive element comprises a magnetic resistance R 5、R 6、R 7、R 8;R 5、R 6Is a positive correlated magnetoresistive junction; r 7、R 8Is a negatively correlated magnetoresistive junction.
Furthermore, the first support frame and the Y-axis mass block are both of frame structures; the Y-axis mass block is positioned in the first support frame; the X-axis mass block is located within the Y-axis mass block.
Further, R's connected in series 1、R 2With R connected in series 3、R 4Connected in parallel, with detection point A at R 1、R 2In between, detection point B is located at R 3、R 4To (c) to (d); r connected in series 5、R 6With R connected in series 7、R 8Connected in parallel, the detection point C is positioned at R 5、R 6In between, the detection point D is located at R 7、R 8In the meantime.
Furthermore, the X-axis detection beam and the Y-axis detection beam are both straight beams or at least one layer of bent and folded slender beams.
Furthermore, a first support beam and a second support beam are fixedly arranged on the second support frame; the first support beam is connected with the second support frame and the first substrate for placing the X-axis tunnel magnetoresistive element, and the second support beam is connected with the second support frame and the second substrate for placing the Y-axis tunnel magnetoresistive element.
Furthermore, the X-axis folding coil and the Y-axis folding coil are positioned between the first support frame and the second support frame.
The acceleration detection method is as follows: the invention adopts a tunnel magnetoresistive effect detection mode, utilizes input acceleration to cause the displacement of a corresponding mass block, and the mass block drives a coil fixed on the mass block to move, thereby causing the change of a high-transformation-rate magnetic field sensed by a tunnel magnetoresistive element above the mass block when the coil is electrified, and realizing the measurement of the input acceleration in two directions of an X axis and a Y axis by measuring the change of the resistance of the magnetoresistive element.
When acceleration along the X-axis direction is input, the X-axis detection beam deforms, the X-axis mass block moves along the X-axis direction under the action of the X-axis detection beam to drive the X-axis inflection coil above to move along the X-axis direction, relative displacement between the X-axis inflection coil and the X-axis tunnel magnetoresistive element above the X-axis inflection coil changes, the X-axis tunnel magnetoresistive element senses that small displacement causes magnetic field change, the magnetic field change causes the tunneling magnetoresistive effect due to the change of the probability of spin electron tunneling in the X-axis tunnel magnetoresistive element, and the resistance of the X-axis tunnel magnetoresistive element greatly changes, and the measurement of the input acceleration along the X-axis direction can be realized by measuring the resistance change of the X-axis tunnel magnetoresistive element, namely measuring the pressure difference value at the A, B end.
When acceleration in the Y-axis direction is input, the Y-axis detection beam deforms, the Y-axis mass block moves in the Y-axis direction under the action of the Y-axis detection beam to drive the Y-axis inflection coil above to move in the Y-axis direction, relative displacement between the Y-axis inflection coil and the Y-axis tunnel magnetoresistive element above the Y-axis inflection coil changes, the Y-axis tunnel magnetoresistive element senses that small displacement causes magnetic field change, the magnetic field change causes the tunneling probability change of spin electrons in the Y-axis tunnel magnetoresistive element to generate tunnel magnetoresistive effect, the resistance of the Y-axis tunnel magnetoresistive element changes greatly, and measurement of the resistance change of the Y-axis tunnel magnetoresistive element, namely measurement of a pressure difference value at the C, D end, can be used for measuring the input acceleration in the Y-axis direction.
The invention has the following technical effects:
1. the invention can be used for detecting the input acceleration in the X-axis direction and the Y-axis direction, the two placed inflection coils are positioned on the same mass block and are orthogonal to each other without mutual influence, the magnetostatic interference can be eliminated, and the monolithic integration is facilitated.
2. The tunnel magnetoresistive element with the multi-bridge structure is adopted, and the multi-bridge tunnel magnetoresistive is provided with different magnetoresistive junctions of different bridges in different detection directions, so that the amplification factor of the magnetoresistive junctions is increased, the magnetoresistive is more sensitive to a magnetic field with high conversion rate, and the tunnel magnetoresistive element has the advantages of low saturation magnetic field, small working magnetic field, small temperature coefficient, large measurement bandwidth, high measurement precision and the like. When detecting acceleration in the Y-axis direction, only the CD end of the internal multi-bridge structure in the Y-axis tunnel magnetoresistive element has output, and the AB end of the internal multi-bridge structure in the X-axis tunnel magnetoresistive element has almost no output, which is also the case when detecting acceleration in the X-axis direction. The multi-bridge structure realizes that the detection of the acceleration of the X shaft and the acceleration of the Y shaft are mutually independent and do not interfere with each other.
3. The double-shaft MEMS accelerometer based on the multi-bridge tunnel magnetoresistance greatly improves the limit detection capability and detection sensitivity of the accelerometer, develops the MEMS accelerometer research of new physical effect detection, fills the gap of few research projects about the tunnel magnetoresistance double-shaft accelerometer in recent years, and also becomes one of the development directions of a new generation of high-precision micro mechanical accelerometer.
4. The tunnel magnetoresistance effect accelerometer is mainly used for measuring input acceleration based on the tunnel magnetoresistance effect, and the input acceleration can be measured by measuring resistance change caused by polarization direction change or tunnel gap change caused by the input acceleration. The tunnel magnetic resistance accelerometer has the advantages of simple structure, high sensitivity, high measurement precision and the like.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention in an embodiment;
FIG. 2 is a top view of an accelerometer support frame and mass of an embodiment;
FIG. 3 is a top view of an accelerometer coil in an embodiment;
FIG. 4 is a top view of an embodiment of a tunnel magnetoresistive device and its frame;
FIG. 5 is a schematic diagram of an internal multi-bridge structure of an X-axis tunnel magnetoresistive element in an embodiment;
FIG. 6 is a schematic diagram of an internal multi-bridge structure of a Y-axis tunnel magnetoresistive element in an embodiment.
Reference numerals: 1. a first supporting frame; 2. a second supporting frame; 3. a first support beam; 4. a second support beam; 5. a Y-axis tunnel magnetoresistive element; 6. an X-axis tunnel magnetoresistive element; 7. a Y-axis mass block; 8. an X-axis mass block; 9. a Y-axis inflection coil; 10. an X-axis inflection coil; 11. a first lead; 12. a second conducting wire; 13. a third lead; 14. conducting wires IV; 15. a first electrode; 16. a second electrode; 17. a third electrode; 18. a fourth electrode; 19. a first Y-axis detection beam; 20. a second Y-axis detection beam; 21. a third Y-axis detection beam; 22. a Y-axis detection beam IV; 23. an X-axis detection beam I; 24. a second X-axis detection beam; 25. an X-axis detection beam III; 26. and the X-axis detection beam is four.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Examples
Referring to fig. 1-6, the multi-bridge tunnel magnetoresistive dual-axis accelerometer includes a first supporting frame 1 and a second supporting frame 2, which are fixedly connected.
An X-axis mass block 8 and a Y-axis mass block 7 are arranged on the first supporting frame 1; the Y-axis mass block 7 is connected with the supporting frame I1 through a plurality of Y-axis detection beams with elastic deformation capacity; the X-axis mass block 8 is connected with the Y-axis mass block 7 through a plurality of X-axis detection beams with elastic deformation capacity. The first support frame 1 and the Y-axis mass block 7 are both of frame structures; the Y-axis mass block 7 is positioned in the first support frame 1; the X-axis proof mass 8 is located within the Y-axis proof mass 7. The X-axis detection beam and the Y-axis detection beam are straight beams or at least one layer of bent and folded slender beams, so that the sensitivity of displacement detection is increased.
An X-axis retracing coil 10 and a Y-axis retracing coil 9 which are mutually orthogonal are fixedly arranged on the X-axis mass block 8; two ends of the X-axis folding coil 10 and two ends of the Y-axis folding coil 9 are respectively connected with corresponding electrodes on the first supporting frame 1 through conducting wires. The X-axis folding coil 10 and the Y-axis folding coil 9 are located between the first support frame 1 and the second support frame 2.
An X-axis tunnel magnetoresistive element 6 and a Y-axis tunnel magnetoresistive element 5 are fixedly arranged on the second support frame 2; the X-axis tunnel magnetoresistive element 6 is positioned right above the X-axis inflection coil 10; the Y-axis tunnel magnetoresistive element 5 is located directly above the Y-axis meander coil 9. A first supporting beam 3 and a second supporting beam 4 are fixedly arranged on the second supporting frame 2; the first support beam 3 connects the second support frame 2 and the first substrate on which the X-axis tunnel magnetoresistive element 6 is placed, and the second support beam 4 connects the second support frame 2 and the second substrate on which the Y-axis tunnel magnetoresistive element 5 is placed.
The internal multi-bridge structure of the X-axis tunnel magnetoresistive element 6 comprises the magnetic resistance R 1、R 2、R 3、R 4;R 1、R 3Is a positive correlated magnetoresistive junction; r 2、R 4Is a negatively correlated magnetoresistive junction.
Internal multi-bridge structure of Y-axis tunnel magnetoresistive element 5Comprising a magnetic resistance R 5、R 6、R 7、R 8;R 5、R 6Is a positive correlated magnetoresistive junction; r 7、R 8Is a negatively correlated magnetoresistive junction.
R connected in series 1、R 2With R connected in series 3、R 4Connected in parallel, with detection point A at R 1、R 2In between, detection point B is located at R 3、R 4To (c) to (d); r connected in series 5、R 6With R connected in series 7、R 8Connected in parallel, the detection point C is positioned at R 5、R 6In between, the detection point D is located at R 7、R 8In the meantime.
When there is input acceleration in the Y-axis direction, the magnetic field in sine wave conversion increases the pressure difference at the CD end to generate a large output, so that the Y-axis tunnel magnetoresistive element 5 is sensitive to a magnetic field with a high change rate, and the self resistance value changes greatly. When the input acceleration is in the X-axis direction, the pressure difference at the AB end is increased, and large output is generated, so that the X-axis tunnel magnetoresistive element 6 is sensitive to a magnetic field with a high change rate, and the resistance value of the X-axis tunnel magnetoresistive element is greatly changed.
Preferably, the X-axis detecting beams include a first X-axis detecting beam 23, a second X-axis detecting beam 24, a third X-axis detecting beam 25 and a fourth X-axis detecting beam 26 distributed on the inner peripheral side of the Y-axis mass block 7; the Y-axis detection beam comprises a first Y-axis detection beam 19, a second Y-axis detection beam 20, a third Y-axis detection beam 21 and a fourth Y-axis detection beam 22 which are distributed on the inner peripheral side of the first supporting frame 1.
As shown in fig. 2, the first support frame 1 is a hollow frame structure, and the first support frame 1 is connected to the Y-axis mass block 7 located on the inner peripheral side thereof through the first Y-axis detection beam 19, the second Y-axis detection beam 20, the third Y-axis detection beam 21, and the fourth Y-axis detection beam 22. The Y-axis mass block 7 is connected with the X-axis mass block 8 positioned on the inner peripheral side thereof through the first X-axis detection beam 23, the second X-axis detection beam 24, the third X-axis detection beam 25 and the fourth X-axis detection beam 26.
As shown in fig. 3, which is a top view of the accelerometer coil, the Y-axis inflection coil 9 is fixedly arranged on the left side above the X-axis quality block 8; the X-axis inflection coil 10 is fixedly arranged on the right side above the X-axis mass block 8; the X-axis inflection coil 10 and the Y-axis inflection coil 9 are orthogonally arranged; the electrodes comprise a first electrode 15, a second electrode 16, a third electrode 17 and a fourth electrode 18. The conducting wires comprise a first conducting wire 11, a second conducting wire 12, a third conducting wire 13 and a fourth conducting wire 14. The first lead 11 is connected with the first electrode 15, the second lead 12 is connected with the second electrode 16, the third lead 13 is connected with the third electrode 17, and the fourth lead 14 is connected with the fourth electrode 18; a first lead 11 is connected with one end of the Y-axis inflection coil 9; the third lead 13 is connected with the other end of the Y-axis inflection coil 9; the second lead 12 is connected with one section of the X-axis inflection coil 10; the fourth lead 14 is connected to the other end of the X-axis meander coil 10.
Although only the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit of the present invention within the knowledge of those skilled in the art, and all changes are encompassed in the scope of the present invention.

Claims (6)

1. The multi-bridge tunnel magnetic resistance double-axis accelerometer is characterized by comprising a first support frame and a second support frame which are fixedly connected;
an X-axis mass block and a Y-axis mass block are arranged on the first supporting frame; the Y-axis mass block is connected with the first support frame through a plurality of Y-axis detection beams with elastic deformation capacity; the X-axis mass block is connected with the Y-axis mass block through a plurality of X-axis detection beams with elastic deformation capacity;
an X-axis retracing coil and a Y-axis retracing coil which are mutually orthogonal are fixedly arranged on the X-axis mass block; two ends of the X-axis folding coil and two ends of the Y-axis folding coil are respectively connected with corresponding electrodes on the first supporting frame through leads;
an X-axis tunnel magnetoresistive element and a Y-axis tunnel magnetoresistive element are fixedly arranged on the second supporting frame; the X-axis tunnel magnetoresistive element is positioned right above the X-axis inflection coil; the Y-axis tunnel magnetoresistive element is positioned right above the Y-axis inflection coil;
the internal multi-bridge structure of the X-axis tunnel magnetoresistive element comprises a detection point A, B and a magnetic resistance R 1、R 2、R 3、R 4;R 1、R 3Is a positive correlated magnetoresistive junction; r 2、R 4Is a negative correlated magneto-resistive junction;
the internal multi-bridge structure of the Y-axis tunnel magnetoresistive element comprises a detection point C, D and a magnetic resistance R 5、R 6、R 7、R 8;R 5、R 6Is a positive correlated magnetoresistive junction; r 7、R 8Is a negatively correlated magnetoresistive junction.
2. The multi-bridge tunnel magnetoresistive dual-axis accelerometer of claim 1, wherein the first support frame and the Y-axis proof mass are both frame structures; the Y-axis mass block is positioned in the first support frame; the X-axis mass block is located within the Y-axis mass block.
3. The multi-bridge tunnel magnetoresistive dual-axis accelerometer of claim 1, wherein R's connected in series 1、R 2With R connected in series 3、R 4Connected in parallel, with detection point A at R 1、R 2In between, detection point B is located at R 3、R 4To (c) to (d); r connected in series 5、R 6With R connected in series 7、R 8Connected in parallel, the detection point C is positioned at R 5、R 6In between, the detection point D is located at R 7、R 8In the meantime.
4. The multi-bridge tunnel magnetoresistive dual-axis accelerometer according to claim 1, wherein the X-axis sense beam and the Y-axis sense beam are both straight beams or at least one layer of elongated beams folded in a curved manner.
5. The multi-bridge tunnel magnetoresistive dual-axis accelerometer according to claim 1, wherein a first support beam and a second support beam are fixedly arranged on the second support frame; the first support beam is connected with the second support frame and the first substrate for placing the X-axis tunnel magnetoresistive element, and the second support beam is connected with the second support frame and the second substrate for placing the Y-axis tunnel magnetoresistive element.
6. The multi-bridge tunnel magnetoresistive dual-axis accelerometer of claim 1, wherein the X-axis meander coil and the Y-axis meander coil are located between the first support frame and the second support frame.
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CN111337708A (en) * 2020-04-10 2020-06-26 东南大学 Tunnel magnetoresistance type micro accelerometer device based on double-layer coil sensitive structure
CN111579818A (en) * 2020-07-06 2020-08-25 吉林大学 High-sensitivity low-noise acceleration detection device and method
CN112344840A (en) * 2020-10-28 2021-02-09 中北大学南通智能光机电研究院 High-sensitivity micro-displacement detection device based on tunnel magnetoresistance effect
CN112858720A (en) * 2021-02-05 2021-05-28 东南大学 Differential type MEMS accelerometer based on tunneling magneto-resistance array

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