CN110824196A - MEMS capacitive Z-axis accelerometer insensitive to stress - Google Patents
MEMS capacitive Z-axis accelerometer insensitive to stress Download PDFInfo
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- CN110824196A CN110824196A CN201911125779.9A CN201911125779A CN110824196A CN 110824196 A CN110824196 A CN 110824196A CN 201911125779 A CN201911125779 A CN 201911125779A CN 110824196 A CN110824196 A CN 110824196A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0831—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type having the pivot axis between the longitudinal ends of the mass, e.g. see-saw configuration
Abstract
The invention discloses an MEMS capacitive Z-axis accelerometer insensitive to stress, wherein a sensitive unit comprises a substrate, a movable mass block, fixed comb teeth, fixed tooth anchor points, a support beam and a central anchor point; the movable mass block is suspended at a central anchor point through the two support beams, and the central anchor point is fixed on the substrate; the movable mass blocks take the supporting beam as a torsion shaft, and the movable mass blocks distributed on two sides of the supporting beam have poor mass; fixed tooth anchor points which are symmetrical by the support beam are arranged on the substrate on the two sides of the central anchor point, and the fixed comb teeth are arranged on the fixed tooth anchor points; the movable mass block is provided with movable comb teeth facing the fixed tooth anchor points, the movable comb teeth are inserted between the fixed comb teeth in a matching mode, and a group of comb tooth capacitors are formed on two sides of the central anchor point respectively. The MEMS capacitive Z-axis accelerometer insensitive to stress has the advantages of good linearity, small temperature drift, good long-term stability, no obvious increase of manufacturing difficulty and the like.
Description
Technical Field
The invention relates to the technical field of silicon micro mechanical sensors, in particular to an MEMS capacitive Z-axis accelerometer insensitive to stress.
Background
As an important application field of the MEMS technology, the silicon micro accelerometer has been widely used in various fields of inertial measurement, with advantages of low cost, small volume, low power consumption, easy integration, high reliability, and the like. The capacitance type silicon micro-accelerometer becomes one of the most developed and widely applied inertia devices at present due to the excellent characteristics of simple manufacturing process, good repeatability, low drift and the like. With the development of the technology, the performance requirements of the MEMS accelerometer are higher and higher, and the influence of the external stress and the temperature on the performance of the MEMS capacitive accelerometer is particularly significant.
The basic working principle of the capacitive accelerometer is that the change of a polar plate gap (clearance changing type) or a polar plate overlapping area (area changing type) of a sensitive capacitor is caused by an inertia force generated by acceleration to be measured, the change of the capacitance is in proportion to the magnitude of the acceleration, and the magnitude of the acceleration can be obtained by acquiring the change of the sensitive capacitor through a signal processing circuit.
The gap-variable capacitance sensing mode mostly adopts a flat capacitor structure and is characterized by high sensitivity, large nonlinearity and obvious suction effect. The area-variable capacitance sensitive mode mostly adopts a comb tooth capacitance structure, and the comb tooth capacitance is composed of movable comb teeth and fixed comb teeth, and has the advantages of good linearity, no influence of applied voltage signals and the like.
For the Z-axis (out-of-plane) accelerometer, due to its motion mode, the gap-variable plate capacitor structure is mostly adopted at present. US6935175 and US8079262 describe two typical structures, both of which use a lower electrode plate and a movable mass plate fabricated on a substrate to form a sensitive capacitor. The deformation of the substrate caused by external stress and temperature change directly leads to the deformation of the lower electrode plate, thereby generating the change of sensitive capacitance and leading the output to drift.
Arjun Selvakumar et al, the university of Michigan, USA, in 1996, first proposed a design method for realizing Z-axis acceleration detection based on variable-area comb capacitors. US7140250 proposes a Z-axis torsion pendulum accelerometer for differential comb capacitance detection. In the two designs, the mass block anchor point and the fixed tooth anchor point are both in a dispersed arrangement design, and the design can not well adapt to substrate deformation caused by external stress and temperature change, and output drift caused by sensitive capacitance change is generated.
At present, there are two main methods for alleviating or inhibiting the influence of external stress and temperature change on the drift of the MEMS capacitive accelerometer: firstly, a stress release or isolation design, such as ZL201410306360.4, introduces a stress isolation structure based on a silicon-silicon bonding manufacturing bump support layer, and CN201510473172 introduces a monolithic integrated embedded stress isolation structure, which on one hand increases the difficulty of chip manufacturing or packaging, and cannot suppress the stress and deformation influence from a sensitive unit source; secondly, a sensitive unit insensitive to stress is designed, and CN201510114611.3 introduces an MEMS chip insensitive to packaging stress, and the lower electrode plate of the flat capacitor is suspended at a single point, so that the lower electrode plate is not affected by substrate deformation.
Disclosure of Invention
The purpose of the invention is as follows:
in view of the above problems, an object of the present invention is to provide a MEMS capacitive Z-axis accelerometer insensitive to stress, which has the advantages of good linearity, small temperature drift, good long-term stability, and no significant increase in manufacturing difficulty.
The technical scheme is as follows:
an MEMS capacitive Z-axis accelerometer insensitive to stress is provided, wherein a sensitive unit comprises a substrate, a movable mass block, fixed comb teeth, fixed tooth anchor points, a support beam and a central anchor point;
the movable mass block is suspended at a central anchor point through the two support beams, and the central anchor point is fixed on the substrate;
the movable mass blocks take the supporting beam as a torsion shaft, and the movable mass blocks distributed on two sides of the supporting beam have poor mass;
fixed tooth anchor points which are symmetrical by the support beam are arranged on the substrate on the two sides of the central anchor point, and the fixed comb teeth are arranged on the fixed tooth anchor points;
the movable mass block is provided with movable comb teeth facing the fixed tooth anchor points, the movable comb teeth are inserted between the fixed comb teeth in a matching mode, and a group of comb tooth capacitors are formed on two sides of the central anchor point respectively.
Furthermore, all the fixed tooth anchor points and the central anchor point are centrally arranged in a set anchor area taking the central anchor point as a geometric center, and the area of the anchor area is less than the area of the chip occupied by the movable mass block.
Furthermore, two groups of comb capacitors form a pair of differential capacitors, and the comb capacitors are in unequal-height comb structures.
Further, a first height difference is provided between the top of the movable comb teeth and the top of the fixed comb teeth.
Further, a second height difference is formed between the bottom of the movable comb teeth and the bottom of the fixed comb teeth.
Furthermore, a plurality of sensitive units form an array, and all the sensitive units are connected by coupling beams to realize same-frequency and same-direction rotation.
Further, the number of sensitive cells comprised in the array is three, four, five or six.
Furthermore, the coupling beam adopts a hinge type structure capable of being overturned and twisted.
Further, the coupling beam is a folding beam.
Further, the out-of-plane stiffness of the coupling beam is greater than the in-plane stiffness.
The invention achieves the following beneficial effects:
the MEMS capacitive Z-axis accelerometer insensitive to stress has the advantages of good linearity, small temperature drift, good long-term stability, no obvious increase of manufacturing difficulty and the like.
Drawings
Fig. 1A is a schematic structural diagram of a Z-axis accelerometer based on a variable gap type sensitive capacitor and a schematic diagram of the Z-axis accelerometer sensitive to stress (no deformation of a substrate).
Fig. 1B is a schematic structural diagram of a Z-axis accelerometer based on a variable gap type sensitive capacitor and a schematic diagram of the Z-axis accelerometer sensitive to stress (deformation of a substrate).
Fig. 2A is a schematic structural diagram of a conventional Z-axis accelerometer based on a variable-area sensitive capacitor and a schematic diagram of the structure of the conventional Z-axis accelerometer based on the sensitivity to stress (no deformation of the substrate).
Fig. 2B is a schematic structural diagram of a conventional Z-axis accelerometer based on a variable-area sensitive capacitor and a schematic diagram of the structure of the conventional Z-axis accelerometer based on the sensitivity to stress (deformation of a substrate).
FIG. 3A is a general schematic diagram of a stress insensitive MEMS capacitive Z-axis accelerometer of the present invention.
Fig. 3B is a cross-sectional view a-a of fig. 3A.
FIG. 4 is a three-dimensional schematic diagram of a comb capacitance structure with unequal heights of the MEMS capacitive Z-axis accelerometer insensitive to stress.
FIG. 5 is a schematic diagram of the working principle of the stress insensitive MEMS capacitive Z-axis accelerometer of the present invention.
FIG. 6 is a schematic diagram of the stress insensitive MEMS capacitive Z-axis accelerometer of the present invention.
FIG. 7 is a schematic diagram of an array form of a stress insensitive MEMS capacitive Z-axis accelerometer of the present invention.
FIG. 8 is a schematic diagram of the stress relief principle of an array B-B view of the stress insensitive MEMS capacitive Z-axis accelerometer of FIG. 7.
In the figure, 1 is a sensitive unit, 11 is a substrate, 13 is a movable mass block, 14 is a support beam, 15 is a central anchor point, 101a and 101b are lower electrode plates, 16 is a comb capacitor, 16a is movable comb teeth, 16b is fixed comb teeth, 16c is a comb arm, 17 is a fixed tooth anchor point, 17a is a left fixed tooth anchor point, 17b is a right fixed tooth anchor point, and 22 is a coupling beam.
Detailed Description
The invention is further described below with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The overall schematic diagram of the stress-insensitive MEMS capacitive Z-axis accelerometer is shown in FIGS. 3A and 3B, and a sensing unit 1 of the stress-insensitive MEMS capacitive Z-axis accelerometer comprises a substrate 11, a movable mass 13, fixed comb teeth 16B, fixed tooth anchor points 17, a supporting beam 14 and a central anchor point 15. The movable mass 13 is suspended from a central anchor point 15 through two support beams 14, the central anchor point 15 is fixed on the substrate 11, and the movable mass 13 takes the support beams 14 as torsion axes and has mass difference on two sides. The fixed comb 16b comprises a comb arm 16c fixed on the substrate via a fixed-tooth anchor 17, and the comb arm 16c is a cantilever structure extending out of the fixed-tooth anchor 17. The fixed-tooth anchor 17 comprises left and right fixed- tooth anchors 17a and 17b which are symmetrically arranged next to the central anchor 15 and are arranged on the left and right sides. The movable mass 13 includes movable comb teeth 16a that are engaged with the fixed comb teeth 16b, the movable comb teeth 16a are interposed between the fixed comb teeth 16b, a pair of comb teeth capacitors are formed on both sides of the support beam 14, and the two sets of comb teeth capacitors constitute a pair of differential capacitors. The whole sensitive unit is of a single-pivot quasi-suspension structure.
All the fixed tooth anchor points 17 and the central anchor point 15 are arranged in a close manner in a concentrated manner in a circular anchor area taking the central anchor point 15 as a geometric center, and the area of the circular anchor area is far smaller than the area of the chip occupied by the movable mass block 13.
The movable mass block 13 of the Z-axis accelerometer performs out-of-plane swinging motion, and in order to cause the differential capacitance to generate differential modulus, a comb capacitor structure with unequal heights is required, as shown in fig. 4, the movable mass block is composed of a movable comb 16a and a fixed comb 16b, the fixed comb 16b is suspended on a fixed tooth anchor point 17, and a height difference Top Offset and a Bot Offset are respectively stored at the Top and the bottom of the movable comb 16a and the Top and the bottom of the fixed comb 16b, and the height difference should be larger than the maximum out-of-plane displacement of the movable mass block 13 in a normal working range, so as to ensure the linearity of the comb capacitor. The unequal-height comb capacitors are manufactured by adopting a deep silicon etching process, and comb structures with small gaps are manufactured by adopting a high depth-to-width ratio etching technology, so that the sensitivity of the comb capacitors is improved.
FIG. 5 is a schematic diagram of the operation of a stress insensitive MEMS capacitive Z-axis accelerometer, in which the mass difference of the movable mass generates an inertia moment causing deflection around a supporting beam under the action of acceleration perpendicular to the plane of the mass, the deflection angle is proportional to the acceleration to be measured and inversely proportional to the torsional stiffness of the supporting beam. The deflection of the movable mass block increases the overlapping area of the differential comb capacitors and decreases the overlapping area of the differential comb capacitors, namely the differential comb capacitors are increased by () A reduction of),、Are respectively the base capacitors of the two comb capacitors,the capacitance variation caused by the acceleration to be measured.
In fact, in addition to the change of the sensitive capacitance caused by the acceleration to be measured, the change of the sensitive capacitance caused by any other factors is detected by the signal processing circuit, thereby reducing the accuracy of the sensor. The sensitive capacitance changes due to environmental factors such as external stress and temperature are the most significant, and the temperature changes introduce package thermal stress during material thermal mismatch. These stresses are transmitted and ultimately manifest as deformation of the MEMS chip, such as warpage, bending, and the like. The sensitive unit of the accelerometer is arranged on the substrate of the MEMS chip in the embodiment. In practice, substrate deformation due to external stress and temperature variation inevitably occurs.
The MEMS capacitive type Z-axis accelerometer is insensitive to stress and is different from the typical structure of the two existing Z-axis accelerometers. As shown in fig. 1A and 1B, a gap-variable sensitive capacitor is formed by a movable mass 13 (upper electrode) and lower electrode plates 101A and 101B, the lower electrode plates 101A and 101B are integrally attached to the surface of a substrate 11, and the lower electrode plates are disposed below the movable mass 13 and symmetrically distributed on two sides of a support beam as an axis to form a pair of differential capacitors. When the substrate deforms due to external stress or temperature change, the movable mass block 13 has completely free mechanical characteristics due to the single-point support structure characteristic, that is, the movable mass block 13 does not deform, but the lower electrode plate can follow the deformation of the substrate 11, so that the gap of the sensitive capacitor changes, and the size of the gap change depends onThe larger the distance L between the lower electrode plate and the torsion shaft (support beam) is, the larger the gap variation is, and the larger the capacitance variation is. Assuming that the degree of bending of the substrate is expressed by the radius of curvature ρ, the capacitance changes. Ideally, the capacitance changesThe common mode of the differential capacitor is that the sensitive units cannot be completely symmetrical in practice, and the signal processing circuit also has common mode leakage, so that the capacitance changesWill cause a drift in the output.
Another conventional Z-axis accelerometer is shown in fig. 2A and 2B, in which a movable mass 13 is fixed to a substrate 11 via a central anchor point 15, movable comb teeth and fixed comb teeth constitute a variable-area sensitive capacitor, the fixed comb teeth are disposed outside the movable comb teeth, the fixed comb teeth are fixed to the substrate via fixed tooth anchor points 17a and 17B, and the fixed tooth anchor points and the central anchor point are distributed in a multi-point manner. When the substrate is bent and deformed, the fixed tooth anchor point is displaced along with the substrate, and the displacement is in direct proportion to the square of the distance L between the fixed tooth anchor point and the central anchor point and in inverse proportion to the curvature radius of the substrate, so that the fixed comb teeth deviate from the original position, and the capacitance change of the comb teeth is caused by the change of the overlapping areaAn output drift is generated.
The situation of the stress insensitive MEMS capacitive Z-axis accelerometer of the present invention when the substrate is deformed is shown in fig. 6. The movable mass 13 has completely free mechanical characteristics due to the structural characteristics of single-point support, i.e. the movable mass is not deformed. A left fixed tooth anchor point 17a and a central anchor point 15 which are arranged in the circular anchor area in an adjacent mode, and assuming that the distance between the left fixed tooth anchor point and the central anchor point is L' and the curvature radius of the substrate is rho, the displacement of the fixed comb teeth in the out-of-plane (Z-axis) direction is ensuredIs approximated to. Since the area of the circular anchor area is much smaller than the chip area occupied by the movable mass block, L 'is usually very small in design, and compared with the conventional schemes in fig. 2A and 2B, L'<<L, namely the capacitance change of comb teeth introduced by the substrate deformation is very small, even if L' is small enough, the influence of the substrate deformation on the overlapping area of the capacitance of the comb teeth can be almost ignored, and therefore the design of the sensitive unit of the Z-axis accelerometer insensitive to stress is achieved.
The stress insensitive MEMS capacitive Z-axis accelerometer shown in fig. 3A and 3B can further improve performance in an array format to meet the requirements of high sensitivity and low noise applications. Although the stress sensitivity problem has been solved well in the design of concentrating adjacent central anchor point of arranging and deciding the tooth anchor point in circular anchor area, still restricted fixed broach and stretched out the length of deciding the tooth anchor point in the X axle direction, stretched out the overlength and can reduce the structural stability of fixed broach, therefore limited the sensitivity of broach electric capacity to a certain extent.
In the embodiment, the array form shown in fig. 7 is adopted to improve the problem of capacitance sensitivity. A plurality of identical stress-insensitive MEMS capacitive Z-axis accelerometer sensitive units 1 are arranged along a Y-axis array, and movable masses of adjacent sensitive units 1 are connected by two coupling beams 22 which are symmetrically distributed about a supporting beam. The coupled beam 22 has characteristics of relatively large out-of-plane (Z-axis) stiffness, relatively small in-plane (Y-axis) stiffness, and torsion along the X-axis, and is typically a folded beam as shown in fig. 7. The characteristic of relatively large out-of-plane stiffness is used for coupling the motion of each sensitive unit, so that the plurality of sensitive units 1 integrally rotate around the Y axis in the same frequency and direction, and the capacitance sensitivity and the effective mass are multiplied. After the plurality of sensing units 1 are arrayed, the central anchor points of the sensing units 1 are distributed along the Y axis at relatively large intervals, and the deformation of the substrate 11 causes all the anchor points to generate displacement, so that stress is generated on all the movable mass blocks, however, the characteristic that the rigidity in the plane (Y axis direction) of the coupling beam 22 is relatively small and the torsion can be performed along the X axis can almost completely release the stress on the movable mass blocks, so that the influence of external stress and thermal stress on the rigidity and the mechanical sensitivity of the supporting beam of the accelerometer is avoided to the greatest extent. At this point, the comb capacitance of each sensitive unit 1 in the array is still insensitive to substrate deformation.
The number of the arrays of the sensing units 1 may be three, four, five, six, etc., and specifically, the five-sensing unit array is adopted in the embodiment, which is determined by the design. Fig. 8 is a simulation of the group package stress in the form of an array of multiple sensing units, from which it can be seen that the coupling beams 22 release the stress on the movable mass in bending and torsional deformations, the stress on the entire movable mass and the supporting beams being kept at a very low level.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (10)
1. An MEMS capacitive Z-axis accelerometer insensitive to stress is characterized in that a sensitive unit comprises a substrate, a movable mass block, fixed comb teeth, fixed tooth anchor points, a support beam and a central anchor point;
the movable mass block is suspended at a central anchor point through the two support beams, and the central anchor point is fixed on the substrate;
the movable mass blocks take the supporting beam as a torsion shaft, and the movable mass blocks distributed on two sides of the supporting beam have poor mass;
fixed tooth anchor points which are symmetrical by the support beam are arranged on the substrate on the two sides of the central anchor point, and the fixed comb teeth are arranged on the fixed tooth anchor points;
the movable mass block is provided with movable comb teeth facing the fixed tooth anchor points, the movable comb teeth are inserted between the fixed comb teeth in a matching mode, and a group of comb tooth capacitors are formed on two sides of the central anchor point respectively.
2. The stress insensitive MEMS capacitive Z-axis accelerometer of claim 1, wherein all of the set anchor points and the central anchor points are centrally located within a set anchor area centered geometrically on the central anchor point, the anchor area having an area < < the movable mass occupying the area of the chip.
3. The stress insensitive MEMS capacitive Z-axis accelerometer of claim 1, wherein the two sets of comb capacitors form a pair of differential capacitors, the comb capacitors being of unequal height comb structures.
4. A stress insensitive MEMS capacitive Z-axis accelerometer according to claim 3, wherein the movable comb teeth have a first height difference from the fixed comb teeth.
5. A stress insensitive MEMS capacitive Z-axis accelerometer according to claim 3, wherein the movable comb teeth have a second height difference from the fixed comb teeth.
6. The stress-insensitive MEMS capacitive Z-axis accelerometer according to claim 1, wherein the array is composed of a plurality of sensitive units, and the sensitive units are connected by coupling beams to realize same-frequency and same-direction rotation.
7. A stress insensitive MEMS capacitive Z-axis accelerometer according to claim 6, wherein the number of sensitive cells comprised in the array is three, four, five or six.
8. The stress insensitive MEMS capacitive Z-axis accelerometer of claim 6, wherein the coupling beam is of a hinge type structure that can turn and twist.
9. The stress insensitive MEMS capacitive Z-axis accelerometer of claim 6, wherein the coupling beam is a folded beam.
10. The stress insensitive MEMS capacitive Z-axis accelerometer of claim 6, wherein the coupled beam has an out-of-plane stiffness greater than an in-plane stiffness.
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CN111551761A (en) * | 2020-04-03 | 2020-08-18 | 四川知微传感技术有限公司 | Low-noise MEMS accelerometer |
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