CN1605871A - Comb capacitance type Z axis accelerometer and preparation method thereof - Google Patents
Comb capacitance type Z axis accelerometer and preparation method thereof Download PDFInfo
- Publication number
- CN1605871A CN1605871A CN 200410083692 CN200410083692A CN1605871A CN 1605871 A CN1605871 A CN 1605871A CN 200410083692 CN200410083692 CN 200410083692 CN 200410083692 A CN200410083692 A CN 200410083692A CN 1605871 A CN1605871 A CN 1605871A
- Authority
- CN
- China
- Prior art keywords
- mask
- movable electrode
- accelerometer
- preparation
- capacitance type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a comb capacitance type Z axis accelerometer and preparation method thereof, wherein the comb capacitance type Z axis accelerometer comprises a glass substrate, a movable electrode, two fixed electrode, a strut beam and an anchoring spot, the ends of the two fixed electrodes are connected with the glass substrate, the unequal high comb teeth of the movable electrode are arranged between the fixed electrodes on the two sides, thus forming two groups of responsive capacitors. The preparing process can be utilized for achieving single chip three axis accelerometer.
Description
Technical field
The present invention relates to a kind of high sensitivity comb capacitance type Z axis accelerometer and preparation method thereof.
Background technology
The minisize condenser type accelerometer that adopts microelectromechanical systems (MEMS) technology to realize has that volume is little, in light weight, precision is high and low cost and other advantages, has wide practical use in fields such as military affairs, auto industry, consumer electronics products.The basic functional principle of capacitive accelerometer is to treat that the inertial force that measuring acceleration produces causes that the pole plate gap (clearance-changed type) of sensitization capacitance or pole plate overlapping area (changed area) change, make the proportional relation of capacitance variations and acceleration magnitude, the variation of obtaining sensitization capacitance by signal processing circuit can obtain the size of acceleration.In two kinds of different capacitance-sensitive modes, the changed area sensitization capacitance has the higher linearity, and is not subject to the voltage signal influence that applied when sensitization capacitance detects, therefore is beneficial to and realizes highly sensitive accelerometer design.For the accelerometer of measuring z axle (perpendicular to working face) acceleration signal,, adopt the clearance-changed type sensitization capacitance owing to be subjected to the restriction of MEMS processing features more.The Selvakumar of Univ Michigan-Ann Arbor USA, A. wait the people to propose to adopt changed area broach electric capacity to realize the method for designing that the Z axle acceleration detects first, but their design can't be distinguished the direction of acceleration, and the highly doped silicon material that arrangements of accelerometers adopted has bigger internal stress, influences the performance of device.The Huikai of Carnegie Mellon Univ USA, people such as Xie have proposed another changed area Z axis accelerometer that adopts integrated MEMS technology to realize, though this accelerometer can be realized Differential Detection, but because the overlapping area of electric capacity depends on the number of plies and the thickness of the metal connecting line that adopts in the technology, thereby can't obtain bigger sensitization capacitance, the stress that exists in the technology has also limited the precision that detects.
Summary of the invention
At the problems referred to above, the purpose of this invention is to provide a kind of Differential Detection that realizes, comb capacitance type Z axis accelerometer of changed area and preparation method thereof.
For achieving the above object, the present invention takes following technical scheme: a kind of comb capacitance type Z axis accelerometer, it is characterized in that: it comprises glass substrate, movable electrode, fixed electorde, brace summer and anchor point, one end of described two fixed electordes is connected on the described glass substrate, the not contour broach of described movable electrode is plugged between the described fixed electorde of both sides, form two groups of sensitization capacitances, the two ends of described movable electrode connect a described brace summer respectively, and described two brace summers are connected on the described glass substrate by a described anchor point respectively, described movable electrode is an axle with described brace summer, and its both sides have of poor quality.
In described two groups of sensitization capacitances, not contour broach is plugged in the described movable electrode between described two fixed electordes, and its top is concordant with described two fixed electordes, and its bottom has difference in height with described two fixed electordes bottom.
In described two groups of sensitization capacitances, not contour broach is plugged in the movable electrode between described two fixed electordes, and its top and bottom all have difference in height with the top and the bottom of described fixed electorde.
A kind of preparation method of comb capacitance type accelerometer, it may further comprise the steps:
(1) adopts the two N of throwing type silicon chips;
(2) forming the composite mask that photoresist mask and monox are formed on silicon chip, is the mask etching deep trouth with the photoresist, and the deep trouth degree of depth is made the lower end difference in height of fixed electorde and movable electrode;
(3) removing the photoresist mask, is the mask etching shallow slot with the monox, and the shallow slot degree of depth is made the gap between movable electrode and the substrate;
(4) remove monox, silicon chip surface adopts ion to inject or diffusion technique is mixed, to form Ohmic contact;
(5) on glass substrate, make metal electrode, as the lead-in wire electrode of accelerometer;
(6) anode linkage is realized glass substrate and silicon pad alignment and bonding, and wafer thinning is arrived suitable thickness;
(7) mask etching releasing structure is finished high broach capacitance accelerometer preparation.
Described mask etching releasing structure is finished single-ended not contour broach capacitance accelerometer preparation for being the mask etching releasing structure with the aluminium mask.
Described mask etching releasing structure may further comprise the steps:
(1) at the composite mask of silicon chip surface formation photoresist mask and aluminium mask formation, be the mask etching deep trouth with the photoresist;
(2) removing the photoresist mask, is the mask etching silicon chip with the aluminium mask, finishes the not contour broach capacitance accelerometer preparation of both-end.
The present invention is owing to take above technical scheme, it has the following advantages: 1, the present invention adopts movable electrode and fixed electorde is single-ended or the not contour structure Design of both-end in broach electric capacity, not only can realize the electric capacity Differential Detection, and can improve and detect the linearity and sensitivity.2, the present invention uses changed area broach electric capacity, and air damping is little, can work under atmosphere.3, the present invention adopts single crystal silicon material to make in accelerometer, can reduce the internal stress of structure greatly, improves measuring accuracy.4, the present invention realizes that in the silicon chip plane Z directional acceleration detects, and has avoided the quadrature assembling with other directional acceleration meter.5, preparation method of the present invention can adopt conventional MEMS process equipment, realize making in enormous quantities, and technological process is simple, with transverse axis accelerometer process compatible, can be used for realizing the three axis accelerometer of single-chip.
Description of drawings
Fig. 1 is a perspective view of the present invention
Fig. 2 is a planar structure synoptic diagram of the present invention
Fig. 3 a～Fig. 3 b is the single-ended not contour broach electric capacity principle of work synoptic diagram that reverses of the present invention
Fig. 4 a～Fig. 4 b is the not contour broach electric capacity principle of work synoptic diagram that reverses of both-end of the present invention
Fig. 5 a～Fig. 5 f is the main preparation process synoptic diagram of accelerometer that the present invention adopts single-ended not contour broach
Fig. 6 a～Fig. 6 b is that the present invention adopts the not crucial preparation process synoptic diagram of accelerometer of contour broach of both-end
Embodiment
As shown in Figure 1 and Figure 2, comb capacitance type Z axis accelerometer of the present invention comprises fixed electorde 1,2, movable electrode 3, brace summer 4, anchor point 5 and glass substrate 9.One end of two fixed electordes 1,2 is connected on the glass substrate 9, the not contour broach of movable electrode 3 is plugged between the fixed electorde 1,2 of both sides, form two groups of sensitization capacitances, the two ends of movable electrode 3 connect a brace summer 4 respectively, two brace summers 4 are connected on the glass substrate 9 by an anchor point 5 respectively, and the quality of movable electrode 3 is an axle with brace summer 4, its anisopleual distribution, so the Z directional acceleration can produce torsional moment, make movable electrode 3 produce reversing of being directly proportional with acceleration value.This inertial mass can be provided with cavity or counterweight realization by a side.Two groups of sensitization capacitances that movable electrode 3 and fixed electorde 1,2 are formed are realized the single-ended or not contour broach of both-end by the height change that changes movable electrode 3 and fixed electorde 1,2.
Shown in Fig. 3 a, Fig. 3 b, it is single-ended not contour broach capacitance structure schematic diagram, movable electrode 3 and fixed electorde 1,2 adopt the not contour structure in lower end, and promptly the top of movable electrode 3 is concordant with the top of fixed electorde 1,2, and the bottom of movable electrode 3 is lower than the bottom of fixed electorde 1,2.When initial position (shown in Fig. 3 a), the electrode overlapping area of two electric capacity is identical, and numerical value equates.When movable electrode 3 is done counterclockwise low-angle and reversed (shown in Fig. 3 b), fixed electorde 1 reduces with the overlapping area of movable electrode 3 and variable quantity is directly proportional with windup-degree, and promptly sensitization capacitance reduces; Fixed electorde 2 is constant with the overlapping area of movable electrode 3, and promptly sensitization capacitance remains unchanged.When movable electrode 3 was done clockwise low-angle and reversed, the situation of the variation of sensitization capacitance when reversing counterclockwise was opposite, and the difference numerical and the windup-degree of two sensitization capacitances are proportional.
Shown in Fig. 4 a, Fig. 4 b, it is the not contour broach capacitance structure of both-end schematic diagram, wherein fixed electorde 1,2 and movable electrode 3 adopt bilateral not contour structure, be that the top of movable electrode 3 and bottom all have difference in height with the top and the bottom of two fixed electordes 1,2, so under equal windup-degree, the difference result of sensitization capacitance is the twice of above-mentioned single-ended structure.
The preparation method of comb capacitance type Z axis accelerometer of the present invention may further comprise the steps:
1, parent material adopts two N type (100) silicon chips 6 of throwing, and thickness is 400 ± 10 microns;
2, shown in Fig. 4 a, on silicon chip 6, form the composite mask that photoresist mask 8 and monox 7 are formed, be mask 8 etching deep trouths with the photoresist, the deep trouth degree of depth is made the lower end difference in height of fixed electorde 1,2 and movable electrode 3;
3, shown in Fig. 4 b, remove photoresist mask 8, be the mask etching shallow slot with monox 7, the shallow slot degree of depth is made the gap between movable electrode 3 and the glass substrate 9;
4, shown in Fig. 4 c, remove monox 7, silicon chip 6 surfaces adopt ion to inject or diffusion technique is mixed, to form Ohmic contact;
5, shown in Fig. 4 d, on glass substrate 9, make metal electrode 10, as the lead-in wire electrode of accelerometer;
6, shown in Fig. 4 e, with the aligning of glass substrate 9 and silicon chip 6 and bonding, realize anode linkage, and silicon chip 6 is thinned to suitable thickness;
7, shown in Fig. 4 f, be the mask etching releasing structure with aluminium mask 11, finish single-ended not contour broach capacitance accelerometer preparation (as shown in Figure 1).
The present invention can also may further comprise the steps:
1, initial process is consistent with above-mentioned single-ended not contour broach accelerometer technology, i.e. processing step 1～6 in the example 2;
2, shown in Fig. 5 a, form the composite mask that photoresist mask 8 and aluminium mask 11 constitute on silicon chip 6 surfaces, be the mask etching deep trouth with the photoresist;
3, shown in Fig. 5 b, remove photoresist mask 8, be mask etching silicon chip 6 with aluminium mask 11, finish the not contour broach capacitance accelerometer preparation of both-end.
Claims (6)
1, a kind of comb capacitance type Z axis accelerometer, it is characterized in that: it comprises glass substrate, movable electrode, fixed electorde, brace summer and anchor point, one end of described two fixed electordes is connected on the described glass substrate, the not contour broach of described movable electrode is plugged between the described fixed electorde of both sides, form two groups of sensitization capacitances, the two ends of described movable electrode connect a described brace summer respectively, described two brace summers are connected on the described glass substrate by a described anchor point respectively, and described movable electrode is an axle with described brace summer, and its both sides have of poor quality.
2, comb capacitance type Z axis accelerometer as claimed in claim 1, it is characterized in that: in described two groups of sensitization capacitances, not contour broach is plugged in the described movable electrode between described two fixed electordes, its top is concordant with described two fixed electordes, and its bottom has difference in height with described two fixed electordes bottom.
3, comb capacitance type Z axis accelerometer as claimed in claim 1, it is characterized in that: in described two groups of sensitization capacitances, not contour broach is plugged in the movable electrode between described two fixed electordes, and its top and bottom all have difference in height with the top and the bottom of described fixed electorde.
4, a kind of preparation method of comb capacitance type accelerometer, it may further comprise the steps:
(1) adopts the two N of throwing type silicon chips;
(2) forming the composite mask that photoresist mask and monox are formed on silicon chip, is the mask etching deep trouth with the photoresist, and the deep trouth degree of depth is made the lower end difference in height of fixed electorde and movable electrode;
(3) removing the photoresist mask, is the mask etching shallow slot with the monox, and the shallow slot degree of depth is made the gap between movable electrode and the substrate;
(4) remove monox, silicon chip surface adopts ion to inject or diffusion technique is mixed, to form Ohmic contact;
(5) on glass substrate, make metal electrode, as the lead-in wire electrode of accelerometer;
(6) anode linkage is realized glass substrate and silicon pad alignment and bonding, and wafer thinning is arrived suitable thickness;
(7) mask etching releasing structure is finished high broach capacitance accelerometer preparation.
5, the preparation method of comb capacitance type accelerometer as claimed in claim 4 is characterized in that: described mask etching releasing structure is finished single-ended not contour broach capacitance accelerometer preparation for being the mask etching releasing structure with the aluminium mask.
6, the preparation method of comb capacitance type accelerometer as claimed in claim 4 is characterized in that: described mask etching releasing structure may further comprise the steps:
(1) at the composite mask of silicon chip surface formation photoresist mask and aluminium mask formation, be the mask etching deep trouth with the photoresist;
(2) removing the photoresist mask, is the mask etching silicon chip with the aluminium mask, finishes the not contour broach capacitance accelerometer preparation of both-end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410083692 CN1605871A (en) | 2004-10-18 | 2004-10-18 | Comb capacitance type Z axis accelerometer and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410083692 CN1605871A (en) | 2004-10-18 | 2004-10-18 | Comb capacitance type Z axis accelerometer and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1605871A true CN1605871A (en) | 2005-04-13 |
Family
ID=34765812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410083692 Pending CN1605871A (en) | 2004-10-18 | 2004-10-18 | Comb capacitance type Z axis accelerometer and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1605871A (en) |
Cited By (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100425993C (en) * | 2006-01-25 | 2008-10-15 | 哈尔滨工业大学 | Differential capacitance type acceleration transducer with frame structure |
| CN101382564B (en) * | 2007-09-07 | 2011-03-02 | 原相科技股份有限公司 | Micromachined sensors |
| CN101666813B (en) * | 2008-09-05 | 2011-12-21 | 财团法人工业技术研究院 | Multi-axis capacitive accelerometer |
| CN102384984A (en) * | 2010-09-02 | 2012-03-21 | 孙博华 | Capacitive single-mass block full comb electrode sensor for triaxial acceleration and manufacturing method thereof |
| CN102401842A (en) * | 2011-07-08 | 2012-04-04 | 上海亚尚电子科技有限公司 | Non-equal height comb teeth capacitive triaxial acceleration transducer and method for manufacturing same |
| CN102538830A (en) * | 2010-11-04 | 2012-07-04 | 精工爱普生株式会社 | Functional device, method of manufacturing the functional device, physical quantity sensor, and electronic apparatus |
| CN101590995B (en) * | 2008-05-27 | 2012-09-05 | 原相科技股份有限公司 | Same plane sensor |
| CN102707090A (en) * | 2012-01-11 | 2012-10-03 | 瑞声声学科技(深圳)有限公司 | Acceleration transducer |
| CN102955046A (en) * | 2012-10-23 | 2013-03-06 | 合肥工业大学 | Monolithic integrated CMOS (Complementary Metal Oxide Semiconductor) MEMS (Micro-electromechanical Systems) multilayer metal three-axis capacitive accelerometer and manufacturing method thereof |
| CN102064021B (en) * | 2009-11-17 | 2013-03-20 | 北京大学 | Comb tooth capacitor of micromachine |
| CN102046514B (en) * | 2008-05-29 | 2013-03-27 | 飞思卡尔半导体公司 | Device with miniature electromechanical system sensor and preparation method thereof |
| CN103913596A (en) * | 2014-04-02 | 2014-07-09 | 清华大学 | Method for manufacturing silicon micro-resonant mode accelerometer |
| CN104089613A (en) * | 2014-07-18 | 2014-10-08 | 深迪半导体(上海)有限公司 | Capacitor-type gyroscope sensitive-end capacitor configuration device and configuration method |
| CN105137121A (en) * | 2015-10-15 | 2015-12-09 | 华东光电集成器件研究所 | Preparation method of low-stress acceleration meter |
| CN105182005A (en) * | 2015-10-15 | 2015-12-23 | 华东光电集成器件研究所 | Low stress accelerometer |
| WO2016119418A1 (en) * | 2015-01-30 | 2016-08-04 | 歌尔声学股份有限公司 | Z-axis structure in accelerometer |
| CN106241730A (en) * | 2016-08-02 | 2016-12-21 | 电子科技大学 | A kind of vertical comb teeth manufacturing process based on SOI |
| CN106809799A (en) * | 2015-11-27 | 2017-06-09 | 上海微联传感科技有限公司 | Acceleration transducer and its manufacture method |
| CN107085125A (en) * | 2017-04-28 | 2017-08-22 | 河海大学常州校区 | A kind of capacitance acceleration transducer for becoming spacing and preparation method thereof |
| US9759740B2 (en) | 2014-07-16 | 2017-09-12 | Chinese Academy of Sciences Institutes of Geology and Geophysics | Symmetrical MEMS accelerometer and its fabrication process |
| CN107389981A (en) * | 2017-06-07 | 2017-11-24 | 中国科学院地质与地球物理研究所 | A kind of mems accelerometer and its manufacturing process in converted measurement direction |
| CN107407695A (en) * | 2015-01-28 | 2017-11-28 | 因文森斯公司 | Parallel-moving type Z axis accelerometer |
| CN107667067A (en) * | 2015-05-15 | 2018-02-06 | 株式会社村田制作所 | Multistage micro mechanical structure |
| CN107846201A (en) * | 2017-09-20 | 2018-03-27 | 戴承萍 | Mems resonator |
| CN108226235A (en) * | 2016-12-21 | 2018-06-29 | 中国矿业大学 | A kind of capacitive MEMS gas sensor |
| CN108303567A (en) * | 2018-02-02 | 2018-07-20 | 扬州杰利半导体有限公司 | A kind of preparation method of single chip integrated three mass Ms EMS capacitance differential type three axis accelerometers |
| CN110824196A (en) * | 2019-11-18 | 2020-02-21 | 中国兵器工业集团第二一四研究所苏州研发中心 | MEMS capacitive Z-axis accelerometer insensitive to stress |
| WO2022022478A1 (en) * | 2020-07-31 | 2022-02-03 | 华为技术有限公司 | Mems chip and preparation method therefor, mems device and electronic device |
| CN115356507A (en) * | 2022-10-14 | 2022-11-18 | 成都本原聚能科技有限公司 | Three-axis accelerometer |
-
2004
- 2004-10-18 CN CN 200410083692 patent/CN1605871A/en active Pending
Cited By (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100425993C (en) * | 2006-01-25 | 2008-10-15 | 哈尔滨工业大学 | Differential capacitance type acceleration transducer with frame structure |
| CN101382564B (en) * | 2007-09-07 | 2011-03-02 | 原相科技股份有限公司 | Micromachined sensors |
| CN101590995B (en) * | 2008-05-27 | 2012-09-05 | 原相科技股份有限公司 | Same plane sensor |
| CN102046514B (en) * | 2008-05-29 | 2013-03-27 | 飞思卡尔半导体公司 | Device with miniature electromechanical system sensor and preparation method thereof |
| CN101666813B (en) * | 2008-09-05 | 2011-12-21 | 财团法人工业技术研究院 | Multi-axis capacitive accelerometer |
| CN102064021B (en) * | 2009-11-17 | 2013-03-20 | 北京大学 | Comb tooth capacitor of micromachine |
| CN102384984A (en) * | 2010-09-02 | 2012-03-21 | 孙博华 | Capacitive single-mass block full comb electrode sensor for triaxial acceleration and manufacturing method thereof |
| TWI467136B (en) * | 2010-11-04 | 2015-01-01 | Seiko Epson Corp | Functional device, method of manufacturing the functional device, physical quantity sensor, and electronic apparatus |
| CN102538830A (en) * | 2010-11-04 | 2012-07-04 | 精工爱普生株式会社 | Functional device, method of manufacturing the functional device, physical quantity sensor, and electronic apparatus |
| US9678100B2 (en) | 2010-11-04 | 2017-06-13 | Seiko Epson Corporation | Functional device, method of manufacturing the functional device, physical quantity sensor, and electronic apparatus |
| US9086428B2 (en) | 2010-11-04 | 2015-07-21 | Seiko Epson Corporation | Functional device, method of manufacturing the functional device, physical quantity sensor, and electronic apparatus |
| CN102401842A (en) * | 2011-07-08 | 2012-04-04 | 上海亚尚电子科技有限公司 | Non-equal height comb teeth capacitive triaxial acceleration transducer and method for manufacturing same |
| CN102707090B (en) * | 2012-01-11 | 2014-04-16 | 瑞声声学科技(深圳)有限公司 | Acceleration transducer |
| CN102707090A (en) * | 2012-01-11 | 2012-10-03 | 瑞声声学科技(深圳)有限公司 | Acceleration transducer |
| CN102955046A (en) * | 2012-10-23 | 2013-03-06 | 合肥工业大学 | Monolithic integrated CMOS (Complementary Metal Oxide Semiconductor) MEMS (Micro-electromechanical Systems) multilayer metal three-axis capacitive accelerometer and manufacturing method thereof |
| CN102955046B (en) * | 2012-10-23 | 2014-05-14 | 合肥工业大学 | Monolithic integrated CMOS (Complementary Metal Oxide Semiconductor) MEMS (Micro-electromechanical Systems) multilayer metal three-axis capacitive accelerometer and manufacturing method thereof |
| CN103913596A (en) * | 2014-04-02 | 2014-07-09 | 清华大学 | Method for manufacturing silicon micro-resonant mode accelerometer |
| US10647570B2 (en) | 2014-07-16 | 2020-05-12 | Chinese Academy of Sciences Institute of Geology and Geophysics | Fabrication process for a symmetrical MEMS accelerometer |
| US10392247B2 (en) | 2014-07-16 | 2019-08-27 | Chinese Academy of Sciences Institute of Geology and Geophysics | Fabrication process for a symmetrical MEMS accelerometer |
| US9759740B2 (en) | 2014-07-16 | 2017-09-12 | Chinese Academy of Sciences Institutes of Geology and Geophysics | Symmetrical MEMS accelerometer and its fabrication process |
| CN104089613A (en) * | 2014-07-18 | 2014-10-08 | 深迪半导体(上海)有限公司 | Capacitor-type gyroscope sensitive-end capacitor configuration device and configuration method |
| CN107407695A (en) * | 2015-01-28 | 2017-11-28 | 因文森斯公司 | Parallel-moving type Z axis accelerometer |
| CN107407695B (en) * | 2015-01-28 | 2020-03-20 | 应美盛公司 | Translational Z-axis accelerometer |
| WO2016119418A1 (en) * | 2015-01-30 | 2016-08-04 | 歌尔声学股份有限公司 | Z-axis structure in accelerometer |
| CN107667067B (en) * | 2015-05-15 | 2019-09-13 | 株式会社村田制作所 | Multistage micro mechanical structure |
| CN107667067A (en) * | 2015-05-15 | 2018-02-06 | 株式会社村田制作所 | Multistage micro mechanical structure |
| CN105182005B (en) * | 2015-10-15 | 2018-02-27 | 华东光电集成器件研究所 | A kind of accelerometer |
| CN105137121B (en) * | 2015-10-15 | 2018-02-27 | 华东光电集成器件研究所 | A kind of preparation method of low stress accelerometer |
| CN105137121A (en) * | 2015-10-15 | 2015-12-09 | 华东光电集成器件研究所 | Preparation method of low-stress acceleration meter |
| CN105182005A (en) * | 2015-10-15 | 2015-12-23 | 华东光电集成器件研究所 | Low stress accelerometer |
| CN106809799A (en) * | 2015-11-27 | 2017-06-09 | 上海微联传感科技有限公司 | Acceleration transducer and its manufacture method |
| CN106809799B (en) * | 2015-11-27 | 2018-07-20 | 上海微联传感科技有限公司 | Acceleration transducer and its manufacturing method |
| CN106241730A (en) * | 2016-08-02 | 2016-12-21 | 电子科技大学 | A kind of vertical comb teeth manufacturing process based on SOI |
| CN108226235A (en) * | 2016-12-21 | 2018-06-29 | 中国矿业大学 | A kind of capacitive MEMS gas sensor |
| CN108226235B (en) * | 2016-12-21 | 2020-12-15 | 中国矿业大学 | Capacitive MEMS gas sensor |
| CN107085125B (en) * | 2017-04-28 | 2019-06-04 | 河海大学常州校区 | A kind of capacitance acceleration transducer and preparation method thereof becoming spacing |
| CN107085125A (en) * | 2017-04-28 | 2017-08-22 | 河海大学常州校区 | A kind of capacitance acceleration transducer for becoming spacing and preparation method thereof |
| CN107389981B (en) * | 2017-06-07 | 2019-07-05 | 中国科学院地质与地球物理研究所 | A kind of mems accelerometer and its manufacturing process in converted measurement direction |
| CN107389981A (en) * | 2017-06-07 | 2017-11-24 | 中国科学院地质与地球物理研究所 | A kind of mems accelerometer and its manufacturing process in converted measurement direction |
| CN107846201A (en) * | 2017-09-20 | 2018-03-27 | 戴承萍 | Mems resonator |
| CN108303567A (en) * | 2018-02-02 | 2018-07-20 | 扬州杰利半导体有限公司 | A kind of preparation method of single chip integrated three mass Ms EMS capacitance differential type three axis accelerometers |
| CN110824196A (en) * | 2019-11-18 | 2020-02-21 | 中国兵器工业集团第二一四研究所苏州研发中心 | MEMS capacitive Z-axis accelerometer insensitive to stress |
| CN110824196B (en) * | 2019-11-18 | 2023-10-03 | 中国兵器工业集团第二一四研究所苏州研发中心 | Stress insensitive MEMS capacitive Z-axis accelerometer |
| WO2022022478A1 (en) * | 2020-07-31 | 2022-02-03 | 华为技术有限公司 | Mems chip and preparation method therefor, mems device and electronic device |
| CN115356507A (en) * | 2022-10-14 | 2022-11-18 | 成都本原聚能科技有限公司 | Three-axis accelerometer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1605871A (en) | Comb capacitance type Z axis accelerometer and preparation method thereof | |
| EP1891450B1 (en) | Method of manufacturing a capacitive acceleration sensor, and a capacitive acceleration sensor | |
| CN101038298A (en) | Symmetrical straight beam structure condenser type micro-acceleration sensor and manufacturing method thereof | |
| CN102128953B (en) | Capacitive micro-acceleration sensor with symmetrically inclined folded beam structure | |
| CN103777037B (en) | Multi-beam double-mass-block acceleration sensor chip and preparation method thereof | |
| CN1793937A (en) | Acceleration sensor | |
| CN100425993C (en) | Differential capacitance type acceleration transducer with frame structure | |
| CN1828223A (en) | Horizontal axis micromechanical gyroscope and its preparation method | |
| CN1816747A (en) | Single proof mass, 3 axis MEMS transducer | |
| KR100499970B1 (en) | Acceleration sensor | |
| US20180045753A1 (en) | Tri-axial mems accelerometer | |
| CN1278922C (en) | Fork type micromechanical gyro and its manufacturing method | |
| TW200827722A (en) | Capacitance sensing structure | |
| CN113702665B (en) | MEMS accelerometer and forming method thereof | |
| CN107817364B (en) | A kind of two axis accelerometer chip of MEMS straight pull and vertical compression formula and preparation method thereof | |
| CN103472260B (en) | A kind of MEMS pitches beam capacitive accelerometer and manufacture method thereof | |
| CN110389237A (en) | Double-shaft acceleration sensor chip and preparation method thereof in a kind of face | |
| CN1273835C (en) | High-sensitivity resonance acceleration meter chip | |
| US6763719B2 (en) | Acceleration sensor | |
| CN1409118A (en) | Acceleration transducer | |
| CN103234669B (en) | Pressure sensor utilizing electrostatic negative stiffness and production method of pressure sensor | |
| CN111498795B (en) | Pressure sensor chip with isolation groove array structure and preparation method thereof | |
| CN1291232C (en) | Minitype angular velocity sensor and its making method | |
| CN112964905A (en) | Piezoresistive double-shaft acceleration sensor chip and preparation method thereof | |
| CN106895777B (en) | Resonant type strain structure based on range expansion, strain sensor and preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |